CN110673437A - Method for screening resolution auxiliary graph - Google Patents
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- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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Abstract
The invention provides a screening method of a resolution auxiliary graph, which comprises the following steps: adding resolution auxiliary graphs on the side of the main graph on the test layout based on a rule mode, and dividing the test layout into different batches; collecting the key size data of the main graph and the characteristic size data of the resolution auxiliary graph on each batch of test layouts; establishing a virtual optical model; adjusting parameters of the virtual optical model to enable the main graphs on the test layouts of each batch to generate corresponding optical intensity distribution graphs; and screening out the resolution auxiliary graph with the characteristic size meeting the requirement according to the optical intensity distribution graph. The method comprises the steps of adjusting parameters of a virtual optical model to enable a main graph to generate an optical intensity distribution graph, and screening out a proper resolution auxiliary graph by analyzing the optical intensity distribution graph, so that the efficiency of collecting and processing characteristic size data of the resolution auxiliary graph is improved, the operation amount of screening the resolution auxiliary graph is reduced, and the process research and development progress is accelerated.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a method for screening resolution auxiliary graphs.
Background
The through hole layer is a key layer which is connected with an upper metal layer and a lower metal layer or is connected with the grid electrode and the metal layers, a process window of the through hole layer is usually square or rectangular, and for a low process node, due to the optical effect of figure edge distortion, the result of the figure on the mask plate actually exposed to the wafer is circular or oval. Under the existing photoetching process conditions, the process window of the through hole layer is much smaller than that of the metal layer, and the process window of the through hole layer becomes an important factor influencing the yield of products. Adding SRAF (Sub-Resolution Assist Features) is a common method for enhancing a graphic process window with low process nodes.
In a conventional rule-based manner, SRAFs are added near via patterns (main patterns) on a test layout, a plurality of test layouts are published in batches according to different SRAF feature size data, FEM (focus exposure array) experimental films are exposed under selected lithography conditions, FEM data of the main patterns under different SRAF feature size data are measured, and the SRAFs with the best feature size data are screened according to the size of an actual process window. However, the feature size data of the SRAF mainly includes the SRAF width, the distance between the SRAF and the main pattern, and the interval between the SRAF and the SRAF, and the security of SRAF addition should be considered at the same time, so that screening the SRAF whose feature size data meets the requirements in the test charts of many batches requires collecting and processing huge SRAF feature size data, which consumes a lot of manpower, material resources, and machine resources. In addition, there is a method of adding SRAFs on a test layout in a model-based manner, but the model-based manner has a large amount of computation for adding SRAFs, and the script running time is about 50% longer than that of a rule-based manner, and the SRAFs have complicated shapes, and the cost and difficulty for verifying the mask making and SRAF security are also increased.
Therefore, a new method for screening SRAFs is needed to solve the problem of large processing data amount or large operation amount when adding a proper SRAF on a test layout on which a via pattern is formed.
Disclosure of Invention
The invention aims to provide a screening method of a resolution auxiliary graph, which aims to solve the problem of large processing data volume or large computation volume when a proper resolution auxiliary graph is added on a test layout.
In order to solve the above technical problem, the present invention provides a method for screening resolution auxiliary patterns, comprising:
providing a plurality of test layouts of a mask, wherein each test layout is provided with a main pattern;
adding a resolution auxiliary graph on the side of the main graph based on a rule mode, and dividing a plurality of test layouts into different batches according to different feature size data of the resolution auxiliary graph;
collecting key size data of the main graph and feature size data of the resolution auxiliary graph on the test layout of each batch;
establishing a virtual optical model suitable for the test layout on the basis of the key dimension data of the main pattern and the characteristic dimension data of the resolution auxiliary pattern;
adjusting light source parameters or photoetching condition parameters of the virtual optical model to enable the main patterns on the test layouts of each batch to generate corresponding optical intensity distribution graphs;
and screening the test layouts of qualified batches according to the optical intensity distribution map so as to screen out the resolution auxiliary graphs with the characteristic sizes meeting the requirements.
Optionally, in the method for screening the resolution auxiliary graph, the optical intensity distribution map is used to analyze whether an error between different fitting curves generated by the key size of the main graph under different light source parameters or different photolithography condition parameters exceeds a preset threshold value to screen a qualified batch of test layouts.
Optionally, in the method for screening a resolution auxiliary pattern, the feature size of the resolution auxiliary pattern includes: a width of the resolution auxiliary pattern, a distance between the resolution auxiliary pattern and the main pattern, and a distance between the resolution auxiliary patterns adjacent and parallel to each other.
Optionally, in the method for screening a resolution auxiliary pattern, the light source parameters include: a light source inner radius and a light source outer radius; the photoetching condition parameters comprise: defocus value and focus value.
Optionally, in the method for screening resolution auxiliary patterns, under the condition that the inner radius of the light source, the outer radius of the light source, and the defocus value are fixed and unchanged, the focus value is changed for the same main pattern, so that the test layouts of each batch generate the first optical intensity distribution map.
Optionally, in the method for screening resolution auxiliary patterns, in a case where the defocus value, the focus value, and the inner radius of the light source are fixed and unchanged, the outer radius of the light source is changed for the same main pattern, so that a second optical intensity distribution map is generated for each batch of test layouts.
Optionally, in the method for screening resolution auxiliary patterns, under the condition that the defocus value, the focus value, and the outer radius of the light source are fixed and unchanged, the inner radius of the light source is changed for the same main pattern, so that a third optical intensity distribution map is generated for each batch of test layouts.
Optionally, in the method for screening a resolution assistant feature, the main feature includes: and (6) a through hole pattern.
Optionally, in the method for screening a resolution auxiliary pattern, the via pattern is divided into: dense via patterns, semi-dense via patterns, and isolated via patterns.
Optionally, in the method for screening the resolution auxiliary patterns, after adjusting a light source parameter or a lithography condition parameter of the virtual optical model to enable the main patterns on each batch of test layouts to generate a corresponding optical intensity distribution map, and before screening qualified batches of test layouts according to the optical intensity distribution map to screen out the resolution auxiliary patterns with a feature size meeting requirements, the method for screening the resolution auxiliary patterns further includes:
and under the condition that the light source parameters and the photoetching condition parameters of the virtual optical model are fixed and unchanged, aiming at the same batch of test layouts, changing the through hole patterns to generate a fourth optical intensity distribution graph.
In summary, the present invention provides a method for screening resolution auxiliary graphics, including: adding a resolution auxiliary graph on the side of a main graph on a test layout in a rule-based mode, and dividing the test layout into different batches according to different feature size data of the added resolution auxiliary graph; collecting the key size data of the main graph and the characteristic size data of the resolution auxiliary graph on each batch of test layouts; establishing a virtual optical model suitable for the test layout; adjusting the light source parameters or the photoetching condition parameters of the virtual optical model to enable the main patterns on the test layouts of each batch to generate corresponding optical intensity distribution graphs; and screening out the resolution auxiliary graph with the characteristic size meeting the requirement according to the optical intensity distribution graph. The method comprises the steps of adjusting parameters of a virtual optical model to generate an optical intensity distribution map in the virtual optical model, and screening the resolution auxiliary graph by analyzing the optical intensity distribution map, so that the efficiency of acquiring and processing feature size data of the resolution auxiliary graph is improved, the operation amount of screening the resolution auxiliary graph is reduced, the process research and development progress is accelerated, and the research and development period is shortened.
Drawings
FIG. 1 is a flow chart of a method for screening resolution assist features in accordance with an embodiment of the present invention;
FIG. 2 is a schematic diagram of a batch test layout according to an embodiment of the present invention;
FIGS. 3(a) and 3(b) are first optical intensity profiles of different batches of test layouts according to an embodiment of the present invention;
FIGS. 4(a) and 4(b) are second optical intensity profiles of different batches of test layouts according to an embodiment of the present invention;
FIGS. 5(a) and 5(b) are third optical intensity distribution diagrams of different batches of test layouts according to an embodiment of the present invention
FIG. 6 is a fourth optical intensity profile for a batch of test layouts in accordance with an embodiment of the present invention.
Wherein the reference numbers indicate:
10-main pattern, 20-resolution auxiliary pattern.
Detailed Description
The method for screening the resolution auxiliary pattern according to the present invention is further described in detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention. Further, the structures illustrated in the drawings are often part of actual structures. In particular, the drawings may have different emphasis points and may sometimes be scaled differently.
The present invention provides a method for screening resolution auxiliary graphs, and referring to fig. 1, fig. 1 is a flowchart of a method for screening resolution auxiliary graphs according to an embodiment of the present invention, including:
s10: providing a plurality of test layouts of a mask, wherein each test layout is provided with a main pattern;
s20: adding a resolution auxiliary graph on the side of the main graph based on a rule mode, and dividing a plurality of test layouts into different batches according to different feature size data of the resolution auxiliary graph;
s30: collecting key size data of the main graph and feature size data of the resolution auxiliary graph on the test layout of each batch;
s40: establishing a virtual optical model suitable for the test layout on the basis of the key dimension data of the main pattern and the characteristic dimension data of the resolution auxiliary pattern;
s50: adjusting light source parameters or photoetching condition parameters of the virtual optical model to enable the main patterns on the test layouts of each batch to generate corresponding optical intensity distribution graphs;
s60: and screening the test layouts of qualified batches according to the optical intensity distribution map so as to screen out the resolution auxiliary graphs with the characteristic sizes meeting the requirements.
The method for screening the resolution auxiliary pattern according to the present invention will be described in detail below.
First, referring to fig. 2, fig. 2 is a schematic diagram of a certain batch of test layouts according to an embodiment of the present invention, which provides a plurality of test layouts of a mask, and each of the test layouts has a main pattern 10 formed thereon. The main pattern of the present application is mainly directed to a process window of a via layer, and in the present embodiment, the main pattern 10 includes: a via pattern, wherein the via pattern is divided into according to density differences: the dense through hole patterns, the semi-dense through hole patterns and the isolated through hole patterns are further formed by a plurality of rectangular frames which are concentrically distributed. The distance between the adjacent rectangular frames in the dense through hole pattern is the minimum, the distance between the adjacent rectangular frames in the isolated through hole pattern is the maximum, and the distance between the adjacent rectangular frames in the semi-dense through hole pattern is between the adjacent rectangular frames in the dense through hole pattern and the isolated through hole pattern.
Then, a resolution assist pattern 20 is added to the main pattern 10 side in a rule-based manner, and the test layout is divided into different batches according to the difference in the feature size data of the resolution assist pattern 20. Specifically, a resolution auxiliary pattern 20 is added around the main pattern 10 in a rule-based manner, and the feature size data of the resolution auxiliary pattern 20 includes: a width a of the resolution auxiliary pattern, a distance b between the resolution auxiliary pattern and the main pattern, and a distance c between the resolution auxiliary patterns adjacent and parallel to each other. In this embodiment, 39 kinds of feature size data are set for the resolution assist pattern 20, and the test layout is divided into 39 batches, and each batch of test layout has only one kind of resolution assist pattern 20 with one kind of feature size data. In this embodiment, the 18 th and 36 th test layouts are taken as an example, wherein the feature size data of the resolution assist pattern 20 on the 18 th test layout are respectively: a width a of the resolution auxiliary pattern 20 is 30nm, a distance b of the resolution auxiliary pattern 20 from the main pattern 10 is 50nm, and a distance c between adjacent resolution auxiliary patterns 20 parallel to each other is 60 nm; the feature size data of the resolution assist feature 20 on the 36 th test layout batch are: the width a of the resolution auxiliary pattern 20 is 35nm, the distance b between the resolution auxiliary pattern 20 and the main pattern 10 is 80nm, and the distance c between adjacent resolution auxiliary patterns 20 parallel to each other is 70 nm.
Next, critical dimension data of the main pattern 10 and feature dimension data of the resolution assist pattern 20 are collected on the test layouts of each lot. In the present embodiment, the critical dimension of the main pattern 10 generally includes the CD and pitch of the main pattern process window.
Further, a virtual optical model suitable for the test layout is established based on the critical dimension data of the main pattern 10 and the feature dimension data of the resolution auxiliary pattern 20.
Then, adjusting the light source parameters or the photolithography condition parameters of the virtual optical model to enable the main pattern 10 on each batch of the test layouts to generate a corresponding optical intensity distribution map. Specifically, the optical intensity distribution map reflects the distribution of the critical dimensions of the main pattern 10 on the same batch of test layouts under different optical intensities. The light source parameters include: a light source inner radius and a light source outer radius; the photoetching condition parameters comprise: defocus value and focus value. In this embodiment, the same main pattern 10 is formed on different batches of test layouts, one of the focus value, the light source outer radius and the light source inner radius is changed for the same main pattern to generate different optical intensity distribution maps, and the optical intensity distribution maps are used to analyze whether errors between different fitting curves generated by the key sizes of the main patterns under different light source parameters or different photolithography condition parameters exceed a preset threshold value to screen the test layouts of the qualified batches. Next, three cases of changing the focus value, the light source outer radius, and the light source inner radius, respectively, will be described in detail.
(1) Referring to fig. 3(a) -3 (b), fig. 3(a) and 3(b) are first optical intensity distribution diagrams of different batches of test layouts according to an embodiment of the present invention, where the inner radius of the light source, the outer radius of the light source, and the defocus value are fixed and unchanged, the main graphs on 39 batches of test layouts are all the same, at this time, the same main graph may be called a standard main graph, and for the same standard main graph, the focus value is changed to generate the first optical intensity distribution diagram for each batch of test layouts, and the critical dimension data of the standard main graph are: CD 78nm, Pitch 115 nm. Referring to table 1, table 1 shows the variation of the focusing values, the inner radius of the light source is 0.592 μm, the outer radius of the light source is 0.74 μm, and the defocus value is 0 μm, and 9 different focusing values are set so that the main graphs on 39 batches of test layouts generate the respective first optical intensity distribution graphs correspondingly. The 9 different focus values enable the main graph 10 to generate 9 fitting curves in the same first optical intensity distribution graph, and the ordinate of the first optical intensity distribution graph is optical intensity; the abscissa is the pattern size (CD of the main pattern). In this embodiment, fig. 3(a) is a first optical intensity distribution diagram of the main pattern on the test layout of the 36 th lot, and fig. 3(b) is a first optical intensity distribution diagram of the main pattern on the test layout of the 18 th lot. The threshold value is determined to be 0.2 from the critical dimension data of the main pattern, and as shown in fig. 3(a) and 3(b), the CD value of each fitting curve obtained from the 36 th test layout is closer to that obtained from the 18 th test layout with the threshold value of 0.2 based on the fitting curve obtained when the focus value is 0 μm.
TABLE 1 Focus value variation
(2) Referring to fig. 4(a) -4 (b), fig. 4(a) and 4(b) are second optical intensity distribution diagrams of different batches of test layouts according to an embodiment of the present invention, where the defocus value, the focus value, and the light source inner radius are fixed, the light source outer radius is changed to generate 39 different second optical intensity distribution diagrams for the same standard main pattern (critical dimension data: CD 78nm and Pitch 115nm, respectively), please refer to table 2, where table 2 is a light source outer radius change case, the defocus value is fixed to 0 μm, the focus value is fixed to 0 μm, and the light source inner radius is fixed to 0.592 μm, and 5 different light source outer radii are set so that the main patterns on the 39 batches of test layouts generate respective second optical intensity distribution diagrams. The 5 different external radii of the light source enable the main graph 10 to generate 5 fitting curves in the same second optical intensity distribution graph, and the ordinate of the second optical intensity distribution graph is optical intensity; the abscissa is the pattern size (CD of the main pattern). In this embodiment, fig. 4(a) is a second optical intensity distribution map of the main pattern on the 36 th lot of test layouts, and fig. 4(b) is a second optical intensity distribution map of the main pattern on the 18 th lot of test layouts. The threshold value is determined to be 0.2 from the critical dimension data of the main pattern, and as shown in fig. 4(a) and 4(b), the CD value of each fitting curve obtained from the 36 th batch of test layouts is closer to that obtained from the 18 th batch of test layouts, based on the fitting curve obtained when the outer radius of the light source is 0.74 μm, in the case where the threshold value is 0.2.
TABLE 2 variation of outer radius of light source
(3) Referring to fig. 5(a) -5 (b), fig. 5(a) and 5(b) are third optical intensity distribution diagrams of different batches of test layouts according to an embodiment of the present invention, where the defocus value, the focus value, and the light source outer radius are fixed, the light source inner radius is changed to generate 39 different third optical intensity distribution diagrams for the same standard main pattern (critical dimension data: CD 78nm and Pitch 115nm, respectively) in the test layouts of 39 batches, please refer to table 3, where table 3 is a light source inner radius change case, the defocus value is fixed to 0 μm, the focus value is fixed to 0 μm, and the light source outer radius is fixed to 0.74 μm, and 6 different light source inner radii are set so that the main patterns on the test layouts of 39 batches generate respective third optical intensity distribution diagrams correspondingly. The 6 different inner radiuses of the light sources enable the main graph 10 to generate 6 fitting curves in the same third optical intensity distribution graph, and the ordinate of the third optical intensity distribution graph is optical intensity; the abscissa is the pattern size (CD of the main pattern). In this embodiment, fig. 5(a) is specifically a third optical intensity distribution map of the main pattern on the 36 th lot of test layouts, and fig. 5(b) is specifically a third optical intensity distribution map of the main pattern on the 18 th lot of test layouts. The threshold value is determined to be 0.2 from the critical dimension data of the main pattern, and as shown in fig. 5(a) and 5(b), the pattern dimension value of each fitting curve obtained from the 36 th batch of test layouts is closer to the pattern dimension value of each fitting curve obtained from the 18 th batch of test layouts with respect to the fitting curve obtained when the outer diameter and the inner diameter of the light source are 0.592 μm as the reference in the case where the threshold value is 0.2.
TABLE 3 variation of inner radius of light source
In this embodiment, after the three conditions of the focus value, the light source outer radius, and the light source inner radius are respectively changed in the optical virtual model, the first optical intensity distribution map, the second optical intensity distribution map, and the third optical intensity distribution map are respectively compared, and the optimal parameters of the virtual optical model are obtained as follows: the inner radius of the light source is 0.592 μm, the outer radius of the light source is 0.74 μm, the focusing value is 0 μm, and the defocusing value is 0 μm.
Further, in this embodiment, a virtual optical model with optimal parameters may be used to generate a fourth optical intensity distribution map for different types of the main patterns 10 (different through hole patterns), that is, when the light source parameters and the photolithography condition parameters of the virtual optical model are fixed (the light source inner radius is 0.592 μm, the light source outer radius is 0.74 μm, the focus value is 0 μm, and the defocus value is 0 μm), the density of the through hole patterns may be changed for the same batch of test patterns to generate the fourth optical intensity distribution map. Specifically, for example, a test layout of the 36 th batch is selected as an experimental object, where the feature size data of the resolution auxiliary pattern 20 are: and a is 35nm, b is 80nm, and c is 70nm, and different via patterns are selected as the main patterns 10 of the test layouts of the 36 th batch, for example, a standard main pattern (CD is 78nm, Pitch is 115nm), a dense via pattern (CD:78nm, Pitch:115nm), an isolated via (CD:78nm), and a semi-dense via pattern (CD:78nm, Pitch:260nm), please refer to fig. 6, where fig. 6 is a fourth optical intensity distribution diagram of the test layouts of the 36 th batch of the embodiment of the present invention, and as can be seen from fig. 6, via patterns of different densities have a wider common window in the test layouts of the 36 th batch.
And finally, analyzing the first optical intensity distribution diagram, the second optical intensity distribution diagram, the third optical intensity distribution diagram and the fourth optical intensity distribution diagram to screen the test layouts of qualified batches so as to screen out the resolution auxiliary graphs with the characteristic sizes meeting the requirements. Specifically, in this embodiment, the first optical intensity distribution map, the second optical intensity distribution map, and the third optical intensity distribution map of the 39 batches of test layouts are analyzed, and it is obvious that the 36 th batch of test layouts has better tolerance to light source variation than the 18 th batch of test layouts, that is, for the light source parameters and the lithography condition parameters varying within a certain range, the capabilities of enhancing the graph contrast of the 36 th batch of test layouts are similar, and the method is more suitable for an actual production process, so that the 36 th batch of test layouts is finally screened out as the optimal test layouts, and the resolution auxiliary graphs added to the 36 th batch of test layouts are screened out as the optimal resolution auxiliary graphs. In the virtual optical model, the focus value, the light source outer radius, the light source inner radius and the density of the through hole pattern are respectively adjusted, a first optical intensity distribution diagram, a second optical intensity distribution diagram, a third optical intensity distribution diagram and a fourth optical intensity distribution diagram are generated in the virtual optical model, and the optimal resolution auxiliary pattern is screened out by analyzing the four optical intensity distribution diagrams, so that the efficiency of collecting and processing the characteristic size data of the resolution auxiliary pattern is improved, the calculation amount of screening the resolution auxiliary pattern is reduced, the process research and development progress is accelerated, and the research and development period is shortened.
In summary, the present invention provides a method for screening resolution auxiliary graphics, including: adding a resolution auxiliary graph on the side of a main graph on a test layout in a rule-based mode, and dividing the test layout into different batches according to different feature size data of the added resolution auxiliary graph; collecting the key size data of the main graph and the characteristic size data of the resolution auxiliary graph on each batch of test layouts; establishing a virtual optical model suitable for the test layout; adjusting the light source parameters or the photoetching condition parameters of the virtual optical model to enable the main patterns on the test layouts of each batch to generate corresponding optical intensity distribution graphs; and screening out the resolution auxiliary graph with the characteristic size meeting the requirement according to the optical intensity distribution graph. The method comprises the steps of adjusting parameters of the virtual optical model to generate an optical intensity distribution map in the virtual optical model, and screening the resolution auxiliary graph by analyzing the optical intensity distribution map, so that the efficiency of collecting and processing characteristic dimension data of the resolution auxiliary graph is improved, the operation amount of screening the resolution auxiliary graph is reduced, the process research and development progress is accelerated, and the research and development period is shortened.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. A method for screening resolution auxiliary patterns is characterized by comprising the following steps:
providing a plurality of test layouts of a mask, wherein each test layout is provided with a main pattern;
adding a resolution auxiliary graph on the side of the main graph based on a rule mode, and dividing a plurality of test layouts into different batches according to different feature size data of the resolution auxiliary graph;
collecting key size data of the main graph and feature size data of the resolution auxiliary graph on the test layout of each batch;
establishing a virtual optical model suitable for the test layout on the basis of the key dimension data of the main pattern and the characteristic dimension data of the resolution auxiliary pattern;
adjusting light source parameters or photoetching condition parameters of the virtual optical model to enable the main patterns on the test layouts of each batch to generate corresponding optical intensity distribution graphs;
and screening the test layouts of qualified batches according to the optical intensity distribution map so as to screen out the resolution auxiliary graphs with the characteristic sizes meeting the requirements.
2. The method as claimed in claim 1, wherein the optical intensity distribution map is used to analyze whether an error between different fitting curves generated by critical dimensions of the main pattern under different light source parameters or different lithography condition parameters exceeds a preset threshold value to screen qualified batches of test layouts.
3. The method of claim 1, wherein the feature size of the resolution assist pattern comprises: a width of the resolution auxiliary pattern, a distance between the resolution auxiliary pattern and the main pattern, and a distance between the resolution auxiliary patterns adjacent and parallel to each other.
4. The method of screening a resolution assistance pattern according to claim 1, wherein the light source parameters include: a light source inner radius and a light source outer radius; the photoetching condition parameters comprise: defocus value and focus value.
5. The method as claimed in claim 4, wherein the focus value is varied to generate a first optical intensity distribution map for each batch of test layouts for the same main pattern under the condition that the inner radius of the light source, the outer radius of the light source and the defocus value are fixed.
6. The method as claimed in claim 4, wherein the outer radius of the light source is varied to generate a second optical intensity distribution map for each batch of test layouts for the same main pattern under the condition that the defocus value, the focus value and the inner radius of the light source are fixed.
7. The method as claimed in claim 4, wherein the light source inner radius is varied to generate a third optical intensity distribution map for each batch of test layouts for the same main pattern under the condition that the defocus value, the focus value and the light source outer radius are fixed.
8. The method of screening a resolution assistant feature of claim 1, wherein the main feature comprises: and (6) a through hole pattern.
9. The method of screening resolution assistant feature of claim 8, wherein said via pattern is classified according to density into: dense via patterns, semi-dense via patterns, and isolated via patterns.
10. The method for screening resolution assist features according to claim 9, wherein after adjusting the light source parameters or the lithography condition parameters of the virtual optical model to generate the corresponding optical intensity distribution map for the main features on each batch of test layouts, and before screening qualified batches of test layouts according to the optical intensity distribution map to screen out the resolution assist features with the desired feature size, the method for screening resolution assist features further comprises:
and under the condition that the light source parameters and the photoetching condition parameters of the virtual optical model are fixed and unchanged, aiming at the same batch of test layouts, changing the through hole patterns to generate a fourth optical intensity distribution graph.
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Cited By (2)
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| CN111308852A (en) * | 2020-03-24 | 2020-06-19 | 上海华力集成电路制造有限公司 | Method for screening photomask auxiliary graph |
| CN113611622A (en) * | 2021-07-07 | 2021-11-05 | 华虹半导体(无锡)有限公司 | Online monitoring method for photoetching conditions and mask |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104090468A (en) * | 2014-07-31 | 2014-10-08 | 上海华力微电子有限公司 | Method for optimizing exposure auxiliary graph |
| CN106950795A (en) * | 2016-01-06 | 2017-07-14 | 中芯国际集成电路制造(上海)有限公司 | The forming method of secondary graphics |
| CN107885028A (en) * | 2017-12-28 | 2018-04-06 | 上海华力微电子有限公司 | The method that auxiliary figure with low resolution determines in OPC modelings |
-
2019
- 2019-11-08 CN CN201911091909.1A patent/CN110673437A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104090468A (en) * | 2014-07-31 | 2014-10-08 | 上海华力微电子有限公司 | Method for optimizing exposure auxiliary graph |
| CN106950795A (en) * | 2016-01-06 | 2017-07-14 | 中芯国际集成电路制造(上海)有限公司 | The forming method of secondary graphics |
| CN107885028A (en) * | 2017-12-28 | 2018-04-06 | 上海华力微电子有限公司 | The method that auxiliary figure with low resolution determines in OPC modelings |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111308852A (en) * | 2020-03-24 | 2020-06-19 | 上海华力集成电路制造有限公司 | Method for screening photomask auxiliary graph |
| CN111308852B (en) * | 2020-03-24 | 2023-08-15 | 上海华力集成电路制造有限公司 | Method for screening auxiliary graph of photomask |
| CN113611622A (en) * | 2021-07-07 | 2021-11-05 | 华虹半导体(无锡)有限公司 | Online monitoring method for photoetching conditions and mask |
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