CN106459688A - 半导体检查用的耐热性粘合片、以及半导体检查方法 - Google Patents

半导体检查用的耐热性粘合片、以及半导体检查方法 Download PDF

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CN106459688A
CN106459688A CN201580024801.4A CN201580024801A CN106459688A CN 106459688 A CN106459688 A CN 106459688A CN 201580024801 A CN201580024801 A CN 201580024801A CN 106459688 A CN106459688 A CN 106459688A
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bonding sheet
methyl
semiconductor
mass parts
thermostability
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CN106459688B (zh
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中岛刚介
九津见正信
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Denka Co Ltd
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Denki Kagaku Kogyo KK
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Abstract

本发明提供一种耐热性粘合片，其在加热时不会轻易发生变形。提供一种粘合片，将粘合剂层层叠于基材而得的粘合片，其特征在于，基材显示热收缩性，粘合剂层包含(甲基)丙烯酸酯共聚物、光聚合性化合物、多官能异氰酸酯固化剂、光聚合引发剂，实质上不包含增粘树脂。此粘合片，在加温后也不会发生变形。另外，由于粘合剂实质上不包含增粘树脂，因此加温后的也不会发生粘合剂层的软化。

Description

半导体检查用的耐热性粘合片、以及半导体检查方法
技术领域
本发明涉及用于检查半导体的耐热性粘合片以及使用该粘合片的半导体检查方法。
背景技术
半导体晶片在形成闭合电路之后贴和粘合片，然后进行切割(dicing)成元件小片、清洗、干燥、粘合片的延展(扩展)、自粘合片进行元件小片的剥离(拾取)、安装等各个工序。理想的是对切割工序至干燥工序为止的被切割为元件小片具有充分的粘合力，并且在拾取工序中粘着力可减少至粘合剂不会残留的程度。
作为粘合片，在对于紫外线及/或电子束等活性光具有透过性的基材上，涂布藉由紫外线等进行聚合固化反应的粘合剂层。关于此粘合片，于切割工序后用紫外线等照射粘合剂层，使粘合剂层发生聚合固化从而降低其粘合力后，拾取出被切断的芯片。
作为此类粘合片，在专利文献1及专利文献2中公开了如下内容：在基材面涂布一种粘合剂而组成粘合片，该粘合剂含有例如由于活性光而可能导致三维网状化、分子内含有光聚合性不饱和双键的化合物(多功能低聚物)。
现有技术文献
专利文献
专利文献1：日本特开2009-245989号公报
专利文献2：日本特开2012-248640号公报
发明内容
发明要解决的问题
在半导体装置的制造工序中，按照以下顺序进行加工和性能检查。
·半导体晶片的切割
·性能检查(常温)
·包装
·性能检查(高温以及常温)
上述工序中，在高温状态下出现异常的芯片，只能进行到包装后的性能检查步骤才可以判断出来。因此，对高温状态下出现异常的芯片也必须全部进行包装，因而包装成本将会增大。
若将切割后的性能检查可在高温下进行，虽然可以降低包装成本，但性能检查是将半导体芯片贴合到切割胶带等粘合片的状态下进行，若对半导体芯片进行加温，会出现粘合片发生弯曲变形或过度密集等情况。
若粘合片发生变形，半导体芯片的位置会偏离，在芯片上形成的电极焊盘和检查探针间无法自动对位，所以需要长时间进行检查。并且，变形严重的情况下，可能会发生芯片接触到检查探针而导致检查无法进行。另外，半导体芯片的间隙窄的情况下，可能会导致芯片之间发生接触，而引起芯片破损或强度降低。
另外，如果粘合片在半导体芯片上过度密集，则即使照射紫外线等使粘合剂层固化，也不会充分降低粘合剂层的粘合力，这些也是导致拾取困难或胶粘残余等不良现象的原因。
本发明是鉴于上述情况而完成的，提供一种能够在加温状态下对半导体晶片进行检查的粘合片。
用于解决问题的方案
根据本发明，提供一种半导体检查用的耐热性粘合片，该粘合片在边加热半导体芯片边进行性能检查的工序中使用，其特征在于，此粘合片在基材上设有粘合剂层，此基材在120℃下加热15分钟时的热收缩率为1.0％～5.0％，且该粘合剂层包括100质量份(甲基)丙烯酸酯共聚物、5～200质量份光聚合性化合物、0.5～20质量份多官能异氰酸酯固化剂、0.1～20质量份光聚合引发剂和0～2质量份增粘树脂。
本发明的发明人发现，通过将具有热收缩性的薄膜使用于粘合片，可以使加热后的粘合片具有张力从而能够抑制变形，另外，加温引起的粘合剂层的软化则起因于粘合剂中所含有的增粘树脂的软化。
基于此认知，发现通过使用具有上述范围热收缩率的基材上设有上述组成的粘合剂层的粘合片，可以在将半导体晶片加热后的状态下进行检查，从而完成了本发明。
以下举例说明本发明的各种实施方式。以下所示的实施方式可以相互组合。
优选所述基材特征为双轴拉伸薄膜。
优选所述粘合片的粘合剂层含有剥离赋予剂。
优选所述剥离赋予剂由硅酮类接枝共聚物组成。
优选相对于100质量份(甲基)丙烯酸酯共聚物的所述剥离赋予剂的添加量为1～20质量份。
优选所述多官能异氰酸酯固化剂具有3个以上异氰酸酯基。
优选所述光聚合引发剂以10℃/分钟的升温速度从23℃进行升温时，其质量减少率为10％时的温度为250℃以上。
根据本发明的其他观点，提供一种半导体的检查方法包括：吸附工序，在半导体芯片粘贴于粘合片的状态下，吸附并固定于100～150℃的载物台上使所述粘合片以接触载物台的方式承载于所述载物台；检查工序，将载物台加热至100～150℃的同时检查所述半导体芯片的性能；活性光线照射工序，对所述粘合片照射活性光线；拾取工序，自所述粘合片拾取所述半导体芯片，所述粘合片为上述的粘合片。
优选在所述吸附工序前，进一步具备将粘合片粘贴于半导体晶片的贴附工序和将所述半导体晶片切割成所述半导体芯片的切割工序。
发明的效果
根据本发明，提供一种在加热时不会轻易发生粘合片变形和粘合层软化的粘合片，能够在对半导体晶片加温的状态下进行检查。现有的在加温状态下的晶片检查是在半导体的包装工序之后进行，但是根据本发明，可以在包装工序前进行加温状态下的晶片检查。即，根据本发明，由于可以在包装工序前就能判断出加温状态下品质不良的芯片，因此可以不对不良芯片进行包装，因而降低包装成本。
具体实施方式
以下，说明本发明的优选实施方式。另外，以下说明的实施方式，表示本发明的代表性实施方式的一例，对本发明范围的解释并不会因此而狭窄。
1.粘合片
(1)基材
(2)光固化型粘合剂
(2-1)实质上不包括增粘树脂
(2-2)(甲基)丙烯酸酯共聚物
(2-3)光聚合性化合物
(2-4)多官能异氰酸酯固化剂
(2-5)光聚合引发剂
2.半导体的检查方法
(1)贴附工序
(2)切割工序
(3)吸附工序
(4)检查工序
(5)活性光照工序
(6)拾取工序
1.粘合片
本发明的粘合片，通过在具有热收缩性的基材上层叠光固化型粘合剂层(以下也简单称为“粘合剂层”)而组成，以粘合剂层实质上不包括增粘树脂为特征。本发明的粘合片，即使在加温条件下也不发生变形。另外，本发明的粘合片几乎或者完全不会发生起因于增粘树脂软化的粘合剂层的软化，因此不会过度密集于半导体晶片。从而，本发明的粘合片能够防止因粘合片变形而导致的检查时间变长或半导体芯片的破损等。此外，可藉由紫外线等照射来充分降低粘合剂层的粘合力，且可以防止拾取不良或残胶。
(1)基材
作为基材的材料，于120℃加热15分钟后的热收缩率为1.0％～5.0％，优选1.5％～4.0％。若热收缩率小于1.0％，加温后基材的收缩小，由于基材的热膨胀等有可能导致粘合片变形。另外，若热收缩率大于5.0％，加热后基材的收缩过大，有可能导致粘合片从环形框架(Ring Frame)上剥离，使基材断裂破损。这里，热收缩率为根据下式求得的数值。
(L0-L1)/L0x100(％)
L0：加热前的基材长度(10cm)
L1：于120℃加热15分钟，冷却至室温后的基材长度
另外，优选基材被双轴拉伸。通过双轴拉伸，加热时基材易于收缩。作为这种基材，例如有聚乙烯和聚丙烯等聚烯烃、聚苯乙烯、聚氯乙烯等。基材的形成方法没有特别限定，例如有从T型模具中延伸押出的树脂而形成薄片状的方法。另外，若在不损失性能的范围中，这种基材也可以含有氧化防止剂和抗静电剂、润滑剂、防阻塞剂、填料等添加剂。
基材可以是由上述材料构成的单层或者多层的薄膜或者薄片，也可以是由不同材料构成的薄膜等层叠而形成。基材的厚度为10～100μm，优选20～80μm。
优选对基材实施抗静电处理。作为抗静电处理，有向基材混合抗静电剂的处理，向基材表面涂布抗静电剂的处理，通过电晕放电进行的处理。
作为抗静电剂，例如可以使用季铵盐单体等。作为季铵盐单体，例如有：(甲基)丙烯酸二甲基氨基乙酯四级氯化物、(甲基)丙烯酸二乙基氨基乙酯四级氯化物、(甲基)丙烯酸甲基乙基氨基乙酯四级氯化物、对二甲基氨基苯乙烯四级氯化物和对-二乙基氨基苯乙烯四级氯化物。其中，(甲基)丙烯酸二甲基氨基乙酯四级氯化物。
(2)光固化型粘合剂
本发明的粘合片的形成粘合剂层的光固化型粘合剂，包含(甲基)丙烯酸共聚物、光聚合性化合物、多官能异氰酸酯固化剂和光聚合引发剂，实质上不包含增粘树脂。
(2-1)实质上不包含增粘树脂。
作为加热时导致粘合剂层的软化的增粘树脂，是为了提高丙烯酸类粘合剂的粘合性而被混合使用的树脂，没有特别限定，例如有松香树脂、萜烯树脂、脂肪族石油树脂、芳族石油树脂、氢化石油树脂、苯并二氢吡喃茚树脂、苯乙烯树脂、二甲苯树脂和这些树脂的混合物。
虽然优选粘合剂中完全不含增粘树脂，但是若加热时粘合剂层几乎不会发生软化的程度，则粘合剂中也可以含有增粘树脂，具体而言，相对于100质量份(甲基)丙烯酸酯共聚物，可以含有2质量份以下(优选0.5质量份以下)。也就是说，所谓“实质上不含有增粘树脂”，是指相对于100质量份(甲基)丙烯酸酯共聚物，增粘树脂的混合量为0～2质量份(优选0～0.5质量份)的意思。
粘合剂中只要实质上不包含增粘树脂，也可以添加剥离赋予剂、抗老化剂、填料、紫外线吸收剂以及光稳定剂等各种添加剂。剥离赋予剂的添加量，没有特别限定，相对于100质量份(甲基)丙烯酸酯共聚物，优选0.1～20质量份，进一步优选2～10质量份，进一步优选0.5～5质量份。剥离赋予剂，例如可以使用硅酮类接枝聚合物(或共聚物)。
(2-2)(甲基)丙烯酸酯共聚物
(甲基)丙烯酸酯共聚物是仅为(甲基)丙烯酸酯单体的共聚物，或者是(甲基)丙烯酸酯单体与乙烯化合物单体的共聚物。另外，(甲基)丙烯酸酯是丙烯酸酯和甲基丙烯酸酯的总称。(甲基)丙烯酸等含(甲基)的化合物等，也同样是指在名称中包含“甲基”的化合物与不包含“甲基”的化合物的总称。
作为(甲基)丙烯酸酯单体，可以列举例如(甲基)丙烯酸丁酯、2-(甲基)丙烯酸丁酯、t-(甲基)丙烯酸丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸异丙酯、(甲基)丙烯酸十三酯、(甲基)丙烯酸十四酯、(甲基)丙烯酸十六酯、(甲基)丙烯酸十八酯、(甲基)丙烯酸环己酯、(甲基)丙烯酸异莰酯、(甲基)丙烯酸双环戊酯、(甲基)丙烯酸苄酯、(甲基)丙烯酸甲氧基乙酯、(甲基)丙烯酸乙氧乙酯、(甲基)丙烯酸丁氧甲酯以及乙氧基-n-(甲基)丙烯酸丙酯、(甲基)丙烯酸2-羟乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯。
作为能够在(甲基)丙烯酸酯单体上共聚的乙烯基化合物单体，可列举含官能基单体，其包含一种以上羧基、环氧基、酰胺基、氨基、羟甲基、磺酸基、氨基磺酸基或者(亚)磷酸酯基等官能基群。
作为具有羧基的单体，例如有(甲基)丙烯酸、丁烯酸、马来酸、亚甲基丁二酸、反丁烯二酸、丙烯酰氨基-N-乙醇酸以及桂皮酸。
作为具有环氧基的单体，例如有丙烯基丙三基醚以及(甲基)丙烯酸环氧丙基醚。
作为具有酰胺基的单体，例如有(甲基)丙烯酰胺。
作为具有氨基的单体，例如有(甲基)丙烯酸酯-N,N-二甲胺乙酯。
作为具有羟甲基的单体，例如有N-羟甲基丙烯酰胺。
(2-3)光聚合性化合物
作为光聚合性化合物，例如可使用三羟甲基丙烷三丙烯酸酯、四羟甲基甲烷四丙烯酸酯、季戊四醇四丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇三丙烯酸酯、二季戊四醇一羟基五丙烯酸酯、聚二季戊四醇六丙烯酸酯、1,4-丁二醇双丙烯酸酯、1,6-己二醇双丙烯酸酯、聚乙二醇二丙烯酸酯、三聚氰酸三乙基丙烯酸酯、市售的低聚酯丙烯酸酯等。
作为光聚合性化合物，除上述丙烯酸酯类化合物，也可以使用聚氨酯丙烯酸酯低聚物。聚氨酯丙烯酸酯低聚物是在使聚酯型或者聚醚型等聚醇化合物与多价异氰酸酯化合物发生反应而得到的端异氰酸酯氨基甲酸乙酯预聚物上，反应具有羟基的(甲基)丙烯酸酯发生而得。
在多价异氰酸酯化合物，例如可使用2,4-甲苯二异氰酸酯、2,6-甲苯二异氰酸酯、1,3-氰酸酯、1,4-亚二甲苯基二异氰酸酯、二苯基甲烷4,4-二异氰酸酯、三甲基二异氰酸酯、六亚甲基二异氰酸酯、异佛尔酮二异氰酸酯(Isophorone Diisocyanate)。另外，具有羟基的(甲基)丙烯酸酯中，例如可以使用(甲基)丙烯酸-2-羟乙酯，(甲基)丙烯酸-2-羟丙酯，聚乙二醇(甲基)丙烯酸酯，季戊四醇三丙烯酸酯酯，环氧丙醇二(甲基)丙烯酸酯，二季戊四醇一羟五丙烯酸酯等。
作为光聚合性化合物，优选具有4个以上乙烯基的聚氨酯丙烯酸酯低聚物，其在紫外线等照射后的粘合剂的固化良好。
光聚合性化合物的混合量，优选相对于100质量份(甲基)丙烯酸酯共聚物，设定为5～200质量份，进一步优选20～180质量份，进一步优选50～150质量份。若减少光聚合性化合物的混合量，紫外线等照射后的粘合片剥离性降低，容易发生半导体芯片的拾取不良。另一方面，若增加光聚合性化合物的混合量，则由于切割时胶的刮起很容易发生拾取不良，且由于反应残渣产生微笑的残胶，这会成为污染的原因。
(2-4)多官能异氰酸酯固化剂
多官能异氰酸酯固化剂，可以使用含有2个以上异氰酸酯基者，例如可使用芳香聚异氰酸酯、脂肪族聚异氰酸酯、脂环族聚异氰酸酯、它们的二聚体、三聚体、加成物等。
作为芳香族聚异氰酸酯，例如有1,3-苯二异氰酸酯、4,4'-二苯二异氰酸酯、1,4-苯二异氰酸酯、4,4'-二苯基甲烷二异氰酸酯、2,4-甲苯基二异氰酸酯、2,6-甲苯基二异氰酸酯、4,4'-甲苯胺二异氰酸酯、2,4,6-甲苯基异氰酸酯、1,3,5-甲苯基异氰酸酯苯、联大茴香胺联异氰酸酯、4,4'-二苯醚二异氰酸酯、4,4',4”-三苯甲烷甲基异氰酸酯、ω,ω'-二异氰酸酯-1,3-二甲苯、ω,ω'-二异氰酸酯-1,4-二甲苯、ω,ω'-二异氰酸酯-1,4-二乙苯、1,4-四甲基二甲基二异氰酸酯以及1,3-四甲基苯二甲基二异氰酸酯。
作为脂肪族聚异氰酸酯，例如有三亚甲基二异氰酸酯、四亚甲基二异氰酸酯、六亚甲基二异氰酸酯、五亚甲基二异氰酸酯、1,2-亚丙基二异氰酸酯、2,3-亚丁基二异氰酸酯、1,3-亚丁基二异氰酸酯、十二亚甲基二异氰酸酯以及2,4,4-三甲基六亚甲基二异氰酸酯。
作为脂环族聚异氰酸酯，例如有3-异氰酸根合甲基-3,5,5-三甲基环己基异氰酸酯、1,3-环戊烷二异氰酸酯、1,3-环己烷二异氰酸、1,4-环己烷二异氰酸酯、甲基-2,4-环己烷二异氰酸酯、甲基-2,6-环己烷二异氰酸酯、4,4'-亚甲基双(环己烷异氰酸酯)、1,4-二(异氰酸甲酯基)环己烷以及1,4-二(异氰酸酯甲基)环己烷。
作为二聚体和三聚体、加成物，例如有二苯基甲烷二异氰酸酯的二聚体、六亚甲基二异氰酸酯的三聚体、三羟甲基丙烷与甲苯二异氰酸酯的加成物、三羟甲基丙烷和六亚甲基二异氰酸酯的加成物。
上述聚异氰酸酯之中，优选具有3个以上聚异氰酸酯基，特别优选六亚甲基二异氰酸酯的三聚体、三羟甲基丙烷与甲苯二异氰酸酯的加成物、三羟甲基丙烷与六亚甲基二异氰酸酯的加成物。
多官能异氰酸酯固化剂的混合比，相对于100质量份(甲基)丙烯酸酯共聚物，为0.5～20质量份，优选1～10质量份。若多官能异氰酸酯固化剂为0.5质量份以上，则粘合力并不过强，故能够抑制拾取不良的发生。若多官能异氰酸酯固化剂为20质量分以下，则粘合力不会降低，切割时可以维持半导体芯片的保持性。
(2-5)光聚合引发剂
光聚合引发剂，可使用安息香、安息香芳烷基醚类、苯乙酮类、蒽醌类、噻吨酮类、缩酮类、二苯甲酮类或者氧杂蒽酮等。
作为安息香，例如有安息香、安息香甲醚、安息香***、安息香二丙醚等。
作为苯乙酮类，例如有安息香芳烷醚类、苯乙酮、2,2-二甲氧基-2-苯乙酮、2,2-二乙氧基-2-苯乙酮、1,1-二氯苯乙酮等。
作为蒽醌类，例如有2-甲基蒽醌、2-乙基蒽醌、2-叔丁基蒽醌、1-氯蒽醌等。
作为噻吨酮类，例如有2,4-二甲基噻吨酮、2,4-二异丙基噻吨酮、2-氯噻吨酮、2,4-二异丙基噻吨酮等。
作为缩酮类，例如有苯乙酮二甲基缩酮、苯甲基二甲基缩酮、苯甲基联苯基硫醚、一硫化四甲基秋兰姆、偶氮二异丁腈、二苯甲基、双乙酰、β-氯蒽醌等。
光聚合引发剂，优选为以10℃/分钟的升温速度从温度23℃升温至500℃，质量减少率为10％时的温度为250℃以上。在后述的加温工序中将贴附于晶片等的粘合片加温至100～150℃时，若光聚合引发剂挥发或者劣化，则在后续工序即光照工序中的粘合剂层的固化不充分，无法充分降低粘合力，成为导致拾取工序中拾取不良的主要原因。因此，优选使用具有上述性状，加热时不会轻易挥发和劣化的光聚合引发剂。
作为上述温度为250℃以上的光聚合引发剂，例如有乙酮、1-[9-乙基-6-(2-甲苯甲酰基)-9H-咔唑-3-基]-，1-(O-乙酰肟)(BASF JAPAN公司制，产品名IRACURE OXE02)、2,4,6-三甲基苯甲酰基-二苯基-膦氧化物(BASF JAPAN公司制，产品名LUCRIN TPO)、以及2-羟基-1-{4-[4-(2-羟基-2-甲基-丙酰基)-苯甲基]-苯基}-2-甲基-丙烷-1-酮(BASF JAPAN公司制，产品名IRGACUR127)、2-苯甲基-2-二甲氨基-1-(4-吗啉基苯基)-丁酮-1(BASFJAPAN公司制，产品名IRGACURE369)、2-二甲氨基-2-(4-甲基-苯甲基)-1-(4-吗啉-4-基-苯基)-丁烷-1-酮(BASF JAPAN公司制，产品名IRGACURE379)、二(2,4,6-三甲基苯甲酰基)-苯基膦氧化物(BASF JAPAN公司制，产品名IRGACURE819)等。
其中，特别优选上述温度为270℃的乙酮、1-[9-乙基-6-(2-甲基苯甲酰基)-9H-咔唑-3-基]-，1-(O-乙酰肟)(BASF JAPAN公司制，产品名IRACURE OXE02)、2,4,6-三甲基苯甲酰基-二苯基-膦氧化物(BASF JAPAN公司制，产品名LUCRIN TPO)、以及2-羟基-1-{4-[4-(2-羟基-2-甲基-丙酰基)-苯甲基]-苯基}-2-甲基-丙烷-1-酮(BASF JAPAN公司制，产品名IRGACUR127)。
光聚合引发剂的混合量，相对于100质量份(甲基)丙烯酸酯共聚物，为1～20质量份，进一步优选0.2～10质量份，进一步优选0.5～5质量份。若混合量过少，则放射线照射后粘合片的剥离性降低，容易发生半导体芯片的拾取不良。另一方面，若混合量过多，则光聚合引发剂流向粘合剂表面，成为污染的原因。
在光聚合引发剂中，根据需要也可以组合1种或者2种以上现有公知的光聚合促进剂而并用。在光聚合促进剂中，可以使用安息香酸或第三极胺等。作为第三级胺，例如有三乙胺、四亚乙基五胺、二甲氨基醚等。
粘合剂层的厚度，优选3μm以上100μm以下，特别优选5μm以上20μm以下。若粘合剂层过厚，则粘合力会过高，拾取性降低。另外，若粘合剂层过薄，则粘合力会变得过低，切割时的芯片保持性降低，环形框架与薄片之间会发生剥离。
2.半导体的检查方法
以下，按顺序说明本发明的半导体的检查方法的具体工序。以下所示的半导体的检查方法为半导体装置制造工序的一部分。
(1)贴附工序
首先，在贴附工序中，将粘合片粘贴于半导体晶片和环形框架。半导体晶片可以为硅晶片以及氮化镓晶片、碳化硅晶片、蓝宝石晶片等现有常用的晶片。在本说明书中，“半导体晶片”含有树脂密封的封装基板或LED基板、玻璃基板等半导体基板。
(2)切割工序
在切割工序中，将半导体晶片进行切割成为半导体芯片。在本说明书中，“半导体芯片”包含MEMS(Micro Electro Mechanical Systems)或晶体管、二极管、LED等半导体部件。
(3)吸附工序
在吸附工序中，在半导体芯片粘贴于粘合片的状态下，使所述粘合片与所述载物台相接触，承载于100～150℃载物台上吸附并固定。此吸附工序，可通过不将由切割工序所得的半导体芯片从粘合片取下，而可以使在切割工序中所使用的粘合片直接吸附于载物台上来进行，也可以通过将由切割工序所得的半导体芯片从粘合片上取下后，将其粘贴于别的粘合片上，并且使此粘合片吸附于载物台上来进行。
(4)检查工序
在检查工序中，为进行形成于半导体芯片的电路的试验，吸附工序后一边将所述载物台加热至100～150℃，一边对所述半导体芯片的性能进行检查。加温时间例如为15分钟～5小时。
本发明的粘合片，由于在加温时基材会发生收缩且固定于环形框架的粘合片会出现张力，粘合片不会弯曲而变形。并且，由于起因于增粘树脂软化的粘合剂层的软化几乎或者完全不会发生，因此不会过度密集于半导体晶片。从而，本发明的检查方法，可以防止由于粘合片的变形所导致的检查工序的长时间化或芯片破损，另外，在后述的活性光照工序和拾取工序中，可以通过照射活性光使粘合剂层的粘合力充分降低，能够防止拾取不良或残胶。
(5)活性光照工序
在光照工序中，从基材侧向光固化粘合剂层照射紫外线等活性光线。作为紫外线的光源，可使用低压水银灯，高压水银灯，超高压水银灯，金属卤化物灯，黑光灯等。
通过光照，使粘合剂层三维网状化而固化，粘合剂层的粘合力降低。此时，如上所述，由于即使对本发明的粘合片进行加温，也不会过度密集于晶片，因此通过活性光的照射，粘合力充分降低。
(6)拾取工序
在拾取工序中，自粘合片的粘合剂层剥离半导体芯片。此时，因为本发明的粘合片藉由紫外线等的照射，可使粘合力充分降低，因此，芯片或者部件与粘合剂层之间变得容易剥离，可得到良好的拾取性，且不会发生残胶等不良现象。作为拾取的方法，可列举将半导体芯片转印至其他粘合片的方法、自粘合片的内侧刮开进行剥离的方法，或者利用顶针等往上顶的方法。另外，根据需要，也可以在拾取工序前设置扩展工序。在扩展工序中，拉伸粘合片使其与半导体芯片之间的间隔扩大，使拾取易于进行。
在拾取工序之后，经由晶粒附着封胶将拾取的芯片或者部件搭载于引线框架中。搭载后，加热晶粒附着封胶，加热粘着芯片或者部件与引线框架。然后，利用树模制搭载于引线框架上的芯片或者部件。
[实施例]
<实施例1>
按照“表1”所示的混合调制光固化型粘合剂。将光固化型粘合剂涂布于聚对苯二甲酸二酯制的隔膜上，涂布使干燥后的粘合层厚度达到10μm。将此粘合层层叠在基材上，于40℃熟化7天，得到粘合片。在基材(K-1)上，使用厚度为30μm的双轴拉伸聚丙烯薄膜(王子F-科技公司制，FC-201)。
[表1]
[基材]
K-1：双轴拉伸聚丙烯(王子F-科技公司制FC-201，厚度：30μm)；120℃的热收缩率为2.0％。
K-2：双轴拉伸聚丙烯(王子F-科技公司制E-201F，厚度：40μm)；120℃的热收缩率为1.5％。
K-3：双轴拉伸聚丙烯(东洋纺织公司制Pylen film-OT P2111，厚度：30μm)；120℃的热收缩率为3.3％。
K-4：双轴拉伸聚丙烯(合成品，厚度：30μm)；120℃的热收缩率为1.1％。
K-5：双轴拉伸聚丙烯(合成品，厚度：30μm)；120℃的热收缩率为4.8％。
[可光固化型粘合剂]
〔(甲基)丙烯酸酯共聚物〕
A-1：日本瑞翁公司丙烯酸酯橡胶AR53L；54％的丙烯酸乙酯、19％的丙烯酸丁酯、24％的甲氧基丙烯酸乙酯的共聚物，通过乳化聚合而得。
A-2：综研化学公司制SK达因1496；96％的2-丙烯酸异辛酯、4％的2-羟基乙基丙烯酸酯的共聚物，通过溶液聚合而得。
〔光聚合性化合物〕
B-1根上工业公司制UN-905；使以二季戊四醇五丙烯酸酯为主要成分的丙烯酸酯与异佛尔酮二异氰酸酯(Isophorone Diisocyanate)的三聚体发生反应所得产物，乙烯基的数量为15个。
B-2：新中村化学公司制A-TMPT；三羟甲基丙烷三丙烯酸酯，乙烯基的数量3个。
〔多官能异氰酸酯可固化剂〕
C-1：日本聚氨酯公司制CORONATEL-45E；2,4-甲苯异氰酸酯的三羟甲基丙烷加成物。
C-2：三亚甲基二异氰酸酯
〔光聚合引发剂〕
D-1：BASF JAPAN公司制IRGACURE127；2-羟基-1-{4-[4-(2-羟基-2-甲基-丙酰基)-苯甲基]-苯基}-2-甲基-丙烷-1-酮，质量减少率为10％时的温度为275℃。
D-2：BASF JAPAN公司制IRGACURE OXE02；乙酮、1-[9-乙基-6-(2-甲基苯甲酰基)-9H-咔唑-3-基]-,1-(O-乙酰肟)，质量减少率为10％时的温度为320℃。
D-3：BASF JAPAN公司制LUCIRIN TPO；2,4,6-三甲基苯甲酰基-二苯基-膦氧化物，质量减少率为10％时的温度为270℃。
D-4：BASF JAPAN公司制IRGACURE651；二苯甲基缩酮，质量减少率为10％时的温度为185℃。
〔硅酮类接枝共聚物〕
E-1：综研化学公司制UTMM-LS2；聚合于聚硅酮分子链的末端具有(甲基)丙烯酰基的硅酮低聚物类单元以及由甲基丙烯酸甲酯等组成的丙烯酸乙烯单元而成的硅酮类接枝聚合物。
〔增粘树脂〕
F-1：安原化学制YS Polystar S145；萜烯酚类增粘树脂，软化点145℃。
将所得粘合片粘贴于形成虚拟电路图案的直径8英寸×厚度0.1mm的硅晶片与环形框架上。将硅晶片设置在电热板上使其与粘合片的粘贴面和反面相接触，于120℃加温1小时后，进行切割以及光照、拾取的各工序。
切割工序的条件如下。
切割装置：DISCO公司制DAD341
切割刀片：DISCO公司制NBC-ZH205O-27HEEE
切割刀片形状：外径55.56mm，刃宽35μm，内径19.05mm
切割刀片转数：40,000rpm
切割刀片前进速度：50mm/秒
切割尺寸：10mm角
对于粘合片的切入量：15μm
切削水温：25℃
切削水量：1.0升/分钟
光照工序的条件如下。
紫外线照射：利用高压水银灯的照射量为150mJ/cm2
拾取工序的条件如下。
在切割后的晶片上，粘贴转印用粘合片(对硅晶片的粘合力：6.25N/25mm)之后，剥离转印用粘合片，并转印芯片。
在加温工序，进行了以下评价。
(1)粘合片的变形
观察以120℃加温1小时后的粘合片，根据以下标准进行。
◎(优)：加温后粘合片也不发生"弯曲"和"剥落"。
○(良)：粘合片由于加温而发生了少数"弯曲"和"剥落"。
×(不可)：粘合片由于加温而发生了"弯曲"和"剥落"。
在切割工序及拾取工序，进行了以下评价。
(1)芯片保持性
对于芯片保持性，基于切割工序之后的半导体芯片被保持在粘合片上的半导体芯片的存留率，并根据以下基准进行评价。
◎(优)：芯片飞散不到5％
○(良)：芯片飞散为5％以上10％以下
×(不可)：芯片飞散为10％以上
(2)拾取性
对于拾取性，基于拾取工序中，使用转印用粘合片转印半导体芯片的转印成功率(拾取成功率)，并根据以下基准进行评价。
◎(优)：芯片的拾取成功率为95％以上
○(良)：芯片的拾取成功率为80％以上95％以下
×(不可)：芯片的拾取成功率为80％以下
评价结果如“表1”所示。在实施例1的粘合片中，加温工序后的粘合片没有变形，并且，芯片保持性以及拾取性均被评价为优。
<实施例2～25>
除对基材的材料、(甲基)丙烯酸酯共聚物以及光聚合性化合物、多官能异氰酸酯可固化剂、光聚合引发剂、硅酮类接枝共聚物的种类或者有无添加做出如“表1”所示的变更之外，以与实施例1同样的方法制造粘合片，并进行评价。结果如表所示。
<比较例1～3，5～10>
作为基材，除使用以下的基材之外，以与实施例1同样的方法制造粘合片，并进行评价。结果如表2所示。
K-6：聚对苯二甲酸乙二酯(尤尼吉可公司制Emblet PET，厚度：25μm)；120℃的热收缩率为0.5％
K-7：环烯烃共聚物(郡是公司制F膜，厚度：100μm)；120℃的热收缩率为0.1％
K-8：二轴拉伸聚丙烯(合成品，厚度：30μm)；120℃的热收缩率为6.0％
<比较例4>
除不添加硅酮类接枝共聚物，而添加增粘树脂之外，以与实施例1同样方得法制造粘合片，并进行评价。结果如表所示。
[表2]
确认了实施例2～25中的粘合片，加温工序后几乎或者完全没有发生粘合片的变形，具有良好的芯片保持性以及拾取性。另一方面，比较例1、2的粘合片，在加温后粘合片发生了变形。并且，比较例3的粘合片，在加热值后胶带的一部分发生了剥落。比较例4～7和9～10的粘合片的拾取性不良，残胶也很明显。比较例8的粘合片的芯片保持性差。
本发明的粘合片，由于即使在加温情况下粘合片也没有发生变形，并且不会过度密集于半导体晶片，因此，可以通过紫外线等的照射来充分降低粘合剂层的粘合力，从而得到良好的拾取性。因此，本发明的粘合片，在半导体装置的制造工序中，由于对半导体芯片加热的同时能够进行性能检查工序，因此可以在包装工序前知道高温状态下的芯片的异常，从而降低包装成本。

Claims (9)

1.一种半导体检查用的耐热性粘合片，其在边加热半导体芯片边进行性能检查的工序中使用，其特征在于，
所述粘合片为在基材上设有粘合剂层的粘合片，所述基材在120℃下加热15分钟时的热收缩率为1.0％～5.0％，所述粘合剂层包含：
100质量份的(甲基)丙烯酸酯共聚物，
5～200质量份的光聚合性化合物，
0.5～20质量份的多官能异氰酸酯固化剂，
0.1～20质量份的光聚合引发剂，和
0～2质量份的增粘树脂。
2.根据权利要求1所述的半导体检查用的耐热性粘合片，其特征在于，所述基材为双轴拉伸薄膜。
3.根据权利要求1或2所述的半导体检查用的耐热性粘合片，所述粘合片的粘合剂层包含剥离赋予剂。
4.根据权利要求3所述的半导体检查用的耐热性粘合片，所述剥离赋予剂由硅酮类接枝共聚物构成。
5.根据权利要求3或4所述的半导体检查用的耐热性粘合片，
所述剥离赋予剂的添加量相对于100质量份的(甲基)丙烯酸酯共聚物，为0.1～20质量份。
6.根据权利要求1～5中任一项所述的半导体检查用的耐热性粘合片，
所述多官能异氰酸酯固化剂具有3个以上的异氰酸酯基。
7.根据权利要求1～6中任一项所述的半导体检查用的耐热性粘合片，
所述光聚合引发剂以10℃/分钟的升温速度从23℃进行升温时，其质量减少率为10％时的温度为250℃以上。
8.一种半导体的检查方法，包括：
吸附工序，在半导体芯片粘贴于粘合片的状态下，以所述粘合片接触载物台的方式将所述半导体芯片置于100～150℃的所述载物台上进行吸附固定；
检查工序，将所述载物台加热至100～150℃，同时检查所述半导体芯片的性能；
活性光线照射工序，对所述粘合片照射活性光线；以及
拾取工序，从所述粘合片拾取所述半导体芯片，
所述粘合片为权利要求1～7中的任一项所述的粘合片。
9.根据权利要求8所述的半导体的检查方法，在所述吸附工序前，进一步具备：
贴附工序，将粘合片贴附于半导体晶片；以及
切割工序，将所述半导体晶片切割成所述半导体芯片。
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