CN106449960B - 一种基于静电激励/电容检测微桥谐振器的薄膜热电变换器的结构与制作方法 - Google Patents
一种基于静电激励/电容检测微桥谐振器的薄膜热电变换器的结构与制作方法 Download PDFInfo
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- CN106449960B CN106449960B CN201610541376.2A CN201610541376A CN106449960B CN 106449960 B CN106449960 B CN 106449960B CN 201610541376 A CN201610541376 A CN 201610541376A CN 106449960 B CN106449960 B CN 106449960B
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- electrode
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- silicon nitride
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- 230000005284 excitation Effects 0.000 title claims abstract description 54
- 230000003068 static effect Effects 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title abstract description 14
- 239000003990 capacitor Substances 0.000 claims abstract description 55
- 238000001514 detection method Methods 0.000 claims abstract description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- 239000010408 film Substances 0.000 claims description 77
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 45
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 43
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 32
- 238000001259 photo etching Methods 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 239000012528 membrane Substances 0.000 claims description 18
- 238000005260 corrosion Methods 0.000 claims description 17
- 230000007797 corrosion Effects 0.000 claims description 17
- 238000005516 engineering process Methods 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 11
- 238000001039 wet etching Methods 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 238000001312 dry etching Methods 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 238000013268 sustained release Methods 0.000 claims description 6
- 239000012730 sustained-release form Substances 0.000 claims description 6
- 229910006091 NiCrSi Inorganic materials 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 230000005496 eutectics Effects 0.000 claims description 3
- 239000012634 fragment Substances 0.000 claims description 3
- 238000007689 inspection Methods 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims 1
- 238000011068 loading method Methods 0.000 abstract description 2
- 238000012536 packaging technology Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 18
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229960002415 trichloroethylene Drugs 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
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CN201610541376.2A CN106449960B (zh) | 2016-07-01 | 2016-07-01 | 一种基于静电激励/电容检测微桥谐振器的薄膜热电变换器的结构与制作方法 |
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CN201610541376.2A CN106449960B (zh) | 2016-07-01 | 2016-07-01 | 一种基于静电激励/电容检测微桥谐振器的薄膜热电变换器的结构与制作方法 |
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CN106449960A CN106449960A (zh) | 2017-02-22 |
CN106449960B true CN106449960B (zh) | 2018-12-25 |
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Families Citing this family (2)
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CN109987570B (zh) * | 2019-03-29 | 2022-11-25 | 中国计量大学 | 基于电磁激励单晶硅谐振梁的热电变换器结构及制造方法 |
CN111721469A (zh) * | 2020-06-17 | 2020-09-29 | 中国计量大学 | 一种高灵敏度微型皮拉尼计 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1401980A (zh) * | 2001-08-24 | 2003-03-12 | 中国科学院电子学研究所 | 以SiNX为梁的新型微结构谐振梁压力传感器制造方法 |
US20050162040A1 (en) * | 2002-02-13 | 2005-07-28 | Commissariat A L'energie Atomique | Tunable bulk acoustic wave mems microresonator |
CN101262958A (zh) * | 2005-03-04 | 2008-09-10 | 国家研究院 | 制造微加工电容式超声传感器的表面微机械工艺 |
CN101566506A (zh) * | 2008-04-22 | 2009-10-28 | 中国计量学院 | 一种基于微型桥谐振器的薄膜热电变换器的结构及制作方法 |
CN101566643A (zh) * | 2008-04-22 | 2009-10-28 | 中国计量学院 | 一种基于双材料微悬臂梁的薄膜热电变换器的结构及制作方法 |
CN105174200A (zh) * | 2015-08-28 | 2015-12-23 | 刘丽霞 | 一种新型谐振式薄膜热电变换器的结构及制作方法 |
CN105236344A (zh) * | 2015-09-01 | 2016-01-13 | 中国计量学院 | 一种新型谐振式薄膜热电变换器的结构及制作方法 |
-
2016
- 2016-07-01 CN CN201610541376.2A patent/CN106449960B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1401980A (zh) * | 2001-08-24 | 2003-03-12 | 中国科学院电子学研究所 | 以SiNX为梁的新型微结构谐振梁压力传感器制造方法 |
US20050162040A1 (en) * | 2002-02-13 | 2005-07-28 | Commissariat A L'energie Atomique | Tunable bulk acoustic wave mems microresonator |
CN101262958A (zh) * | 2005-03-04 | 2008-09-10 | 国家研究院 | 制造微加工电容式超声传感器的表面微机械工艺 |
CN101566506A (zh) * | 2008-04-22 | 2009-10-28 | 中国计量学院 | 一种基于微型桥谐振器的薄膜热电变换器的结构及制作方法 |
CN101566643A (zh) * | 2008-04-22 | 2009-10-28 | 中国计量学院 | 一种基于双材料微悬臂梁的薄膜热电变换器的结构及制作方法 |
CN105174200A (zh) * | 2015-08-28 | 2015-12-23 | 刘丽霞 | 一种新型谐振式薄膜热电变换器的结构及制作方法 |
CN105236344A (zh) * | 2015-09-01 | 2016-01-13 | 中国计量学院 | 一种新型谐振式薄膜热电变换器的结构及制作方法 |
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Application publication date: 20170222 Assignee: Xinchang China Metrology University Enterprise Innovation Research Institute Co.,Ltd. Assignor: China Jiliang University Contract record no.: X2021330000071 Denomination of invention: Structure and manufacturing method of thin film thermoelectric converter based on electrostatic excitation / capacitance detection microbridge resonator Granted publication date: 20181225 License type: Common License Record date: 20210816 |
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Assignee: Xinchang China Metrology University Enterprise Innovation Research Institute Co.,Ltd. Assignor: China Jiliang University Contract record no.: X2021330000071 Date of cancellation: 20211231 |
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