CN106449960B - A kind of structure and production method based on static excitation/capacitance detecting micro-bridge resonator film thermoelectric converter - Google Patents
A kind of structure and production method based on static excitation/capacitance detecting micro-bridge resonator film thermoelectric converter Download PDFInfo
- Publication number
- CN106449960B CN106449960B CN201610541376.2A CN201610541376A CN106449960B CN 106449960 B CN106449960 B CN 106449960B CN 201610541376 A CN201610541376 A CN 201610541376A CN 106449960 B CN106449960 B CN 106449960B
- Authority
- CN
- China
- Prior art keywords
- electrode
- thermal resistance
- film
- adding thermal
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
Abstract
The invention discloses a kind of structures and production method based on static excitation/capacitance detecting micro-bridge resonator film thermoelectric converter.Film thermoelectric converter is made of adding thermal resistance (2), two-end fixed beam (3), excitation electrode (4) and detection capacitor (5) being produced on same silicon wafer (1).The heat that adding thermal resistance (2) is generated and radiated after being powered causes two-end fixed beam (3) temperature to increase, and then change the axial stress of two-end fixed beam (3), finally reduce the resonance frequency of two-end fixed beam (3).Variation by measuring the resonance frequency of two-end fixed beam (3) can measure the size for loading input voltage or electric current on adding thermal resistance (2).Film thermoelectric converter according to the present invention has the advantage that adding thermal resistance (2), two-end fixed beam (3), excitation electrode (4) and detection capacitor (5) are produced on same silicon wafer (1), simplifies device packaging technology.
Description
Technical field
The present invention relates to a kind of based on static excitation/capacitance detecting micro-bridge resonator film thermoelectric converter, especially
Adding thermal resistance, two-end fixed beam, excitation electrode and detection capacitor are produced on the resonant mode film thermoelectric converter on same silicon wafer
Structure and production method, belong to the field microelectromechanical systems (MEMS).
Background technique
Alternating voltage (stream) standard is one of basic electricity standard, can be by the exchange of 10Hz~1MHz by this standard
The metering of voltage (or electric current) is traceable to uncertainty better than 10-8Josephson's direct current quantum voltage reference.To alternating voltage
The method traced to the source usually using combined-voltage conversion, i.e., carried out by the virtual value of alternating voltage and standard direct current pressure
Compare, the magnitude of alternating voltage is determined with the magnitude of DC voltage.Current most accurate AC-DC conversion standard is to pass through film
What thermoelectric converter was realized.
Film thermoelectric converter is mainly made of the adding thermal resistance and temperature detecting element that are produced on insulating film.Exchange
Voltage (or electric current) and DC voltage (or electric current) are successively applied in adding thermal resistance in turn, are generated Joule heat and are made adding thermal resistance
Temperature increases, the temperature of temperature sensor measurement adding thermal resistance, compares the Joule heat that they are generated, so that it may obtain alternating voltage
The size of (or electric current) generation thermal power.For ideal thermoelectric converter, the AC and DC voltage of constant power successively applies
At identical adding thermal resistance both ends, temperature sensor output voltage should also be as equal.
In film thermoelectric converter, the temperature detecting element of detection adding thermal resistance temperature mostly uses thermoelectric pile, also adopts
With the report of thermistor.Thermoelectric pile measures the mode of adding thermal resistance temperature, and that there are output impedances is big, insulation effect is undesirable, portion
Point heat can through thermocouple leads to substrate the shortcomings that.When using thermosensitive resistance measurement adding thermal resistance temperature, thermistor itself
Also heat is generated, will affect the measurement for generating heat to adding thermal resistance.In addition, the signal of both temperature elements output is simulation
Signal.In order to reduce adding thermal resistance heat through heat transfer from temperature sensor to substrate, improve temperature sensor detectivity,
Reduce the AC-DC conversion error of thermoelectric converter, we propose one kind by adding thermal resistance, micro bridge resonator and sealing before
The film thermoelectric converter of ring composition.Adding thermal resistance and micro bridge resonator are produced on different silicon wafers, need to pass through anode
The silicon wafer that production has the silicon wafer of adding thermal resistance and production to have micro bridge resonator is encapsulated in by bonding or glass solder sealing technique
Together, there is certain technical difficulty.
Summary of the invention
It is a kind of based on the transformation of static excitation/capacitance detecting micro-bridge resonator thin film thermoelectric it is an object of the invention to invent
The structure and production method of device.Adding thermal resistance and micro-bridge resonator are produced on same silicon wafer, to simplify device packaging technology.
To achieve the above object, the technical scheme adopted by the invention is that: film thermoelectric converter is by being produced on same silicon
Adding thermal resistance, two-end fixed beam, excitation electrode and the detection capacitor composition of on piece.Two-end fixed beam, excitation electrode and detection electricity
Hold composition micro-bridge resonator.The mixing micromechanics that film thermoelectric converter is made of body micromechanical process and surface micromechanical process
Technique production, wherein the silicon materials below adding thermal resistance using body micromechanical process from back side wet etching to avoid heat to lining
The heat transfer at bottom, the amorphous silicon membrane between two-end fixed beam and adding thermal resistance are rotten from side wet process using surface micromechanical process
Erosion is to discharge two-end fixed beam.
Work according to the present invention based on static excitation/capacitance detecting micro-bridge resonator film thermoelectric converter is former
Reason is: micro-bridge resonator is worked using static excitation, capacitor vibration pick-up mode, passes through load and two-end fixed beam on excitation electrode
The identical ac signal of intrinsic frequency is at resonant state, by the vibration frequency for detecting capacitance detecting two-end fixed beam
Signal.The heat that adding thermal resistance is generated and radiated after being powered causes two-end fixed beam temperature to increase, and then changes two-end fixed beam
Axial stress, finally reduce the resonance frequency of two-end fixed beam.By the variation for measuring the resonance frequency of two-end fixed beam
The size for loading input voltage or electric current in adding thermal resistance can be measured.
It is according to the present invention based on static excitation/capacitance detecting micro-bridge resonator film thermoelectric converter can be used with
Lower section method makes and encapsulates:
[1] using thermal oxidation method in the two-sided silicon dioxide thin film growth of silicon wafer.
[2] thin in the two-sided deposit lpcvd silicon nitride of silica membrane using low-pressure chemical vapor phase deposition (LPCVD) technique
Film.
[3] front side of silicon wafer sputter NiCrSi film, photoetching adding thermal resistance figure, corrode out adding thermal resistance (.
[4] electric under electrode pad, detection capacitor under electrode, detection capacitor lower electrode, excitation electrode under photoetching excitation electrode
The figure of pole pad and adding thermal resistance pad successively sputters titanium film and gold thin film, titanium film is gold thin film and lpcvd silicon nitride
The adhesion layer of film, stripping technology obtain electrode pad, inspection under electrode under excitation electrode, detection capacitor lower electrode, excitation electrode
Survey capacitor lower electrode pad and adding thermal resistance pad.
[5] plasma enhanced CVD (PECVD) technology successively deposit first layer PECVD silicon nitride film,
Amorphous silicon membrane and second layer PECVD silicon nitride film, respectively as corrosion masking layer, sacrificial layer and the both-end in subsequent technique
The structural material of clamped beam.
[6] photoetching excitation electrode top electrode, detection capacitor top electrode, excitation electrode top electrode pad and detection capacitor power on
The figure of pole pad, sputters titanium film and gold thin film, and stripping technology obtains excitation electrode top electrode, detection capacitor top electrode, swashs
Encourage electrode top electrode pad and detection capacitor top electrode pad.
[7] plasma enhanced CVD (PECVD) technology production third layer PECVD silicon nitride is thin again
Film, the second layer PECVD silicon nitride film made in the film and [5] step process are the structural materials of two-end fixed beam.
[8] in front side of silicon wafer photoetching forming tank, using in sustained release hydrofluoric acid solution wet etching and dry etching at least
A kind of third layer PECVD silicon nitride film, second layer PECVD silicon nitride film that method removal is exposed in forming tank.
[9] electrode pad, detection capacitor lower electrode pad, adding thermal resistance pad in the case where front side of silicon wafer photoetching motivates electrode
Figure.Dry etching motivates the third layer above electrode pad under electrode, detection capacitor lower electrode pad and adding thermal resistance pad
PECVD silicon nitride film, second layer PECVD silicon nitride film, amorphous silicon membrane, first layer PECVD silicon nitride film.
[10] in the figure of front side of silicon wafer photoetching excitation electrode top electrode pad and detection capacitor top electrode pad.Dry method is carved
Third layer PECVD silicon nitride film above erosion excitation electrode top electrode pad and detection capacitor top electrode pad.
[11] back side photoetching forms back corrosion window, successively using dry etching and sustained release hydrofluoric acid solution wet etching
Lpcvd silicon nitride film and silica membrane in removal back corrosion window, front protecting corrode in anisotropic etchant
In back corrosion window, a part of silicon substrate below adding thermal resistance.
[12] scribing.
[13] the positive amorphous silicon membrane of wet etching and it is located in back corrosion window, remaining silicon lining below adding thermal resistance
Bottom.
Chip is welded on shell pedestal by [14] fragment, eutectic bonding technology, the drawing on pad and shell on chip
Bonding wire between foot, finally sealing cap in a vacuum chamber.
Wherein, the excitation electrode top electrode that electrode and [6] step process make under the excitation electrode of [4] step process production
The detection capacitor top electrode of composition excitation electrode, the detection capacitor lower electrode of [4] step process production and the production of [6] step process
Composition detection capacitor.
It is according to the present invention based on static excitation/capacitance detecting micro-bridge resonator film thermoelectric converter have it is following
Advantage: adding thermal resistance, two-end fixed beam, excitation electrode and detection capacitor are produced on same silicon wafer, simplify device encapsulation work
Skill.
Detailed description of the invention
Fig. 1 is structural schematic diagram based on static excitation/capacitance detecting micro-bridge resonator film thermoelectric converter and cuts
Face figure.
Fig. 2 is being converted based on static excitation/capacitance detecting micro-bridge resonator thin film thermoelectric as the embodiment of the present invention
The fabrication processing figure of device.
In attached drawing:
1-2-adding thermal resistance of silicon wafer
3-two-end fixed beam 4-excitation electrodes
5-detection 6-micro-bridge resonators of capacitor
7-silica membrane 8-lpcvd silicon nitride films
Electrode under 9-NiCrSi film 10-excitation electrodes
Electrode pad under 11-detection capacitor lower electrode 12-excitation electrodes
13-detection capacitor lower electrode pad 14-adding thermal resistance pads
15-first layer PECVD 16-amorphous silicon membranes of silicon nitride film
17-second layer PECVD silicon nitride film 18-excitation electrode top electrodes
19-detection capacitor top electrodes 20-motivate electrode top electrode pad
21-detection capacitor top electrode pad 22-third layer PECVD silicon nitride films
23-forming tank 24-back corrosion windows
Specific embodiment
The present invention will be further described with reference to the accompanying drawings and examples, but is not limited to the embodiment.
Embodiment:
It is according to the present invention based on static excitation/capacitance detecting micro-bridge resonator film thermoelectric converter, production
Process flow is as follows:
[1] silicon wafer 1 is (100) face, 1~10 Ω cm of resistivity, twin polishing N-type silicon chip, and 400 microns of thickness (see attached
Fig. 2 [1]).Using thermal oxidation method in 1 surface silicon dioxide thin film growth 7 of silicon wafer, 1100 DEG C of temperature, time 36min, thickness
600nm (see attached drawing 2 [2]).
[2] using low-pressure chemical vapor phase deposition (LPCVD) in 7 surface deposition lpcvd silicon nitride film of silica membrane
8, thickness 300nm.(see attached drawing 2 [3])
[3] front side of silicon wafer sputters NiCrSi film 9, thickness 70nm (see attached drawing 2 [4]).2 figure of photoetching adding thermal resistance, nitre
The NiCrSi film 9 that wet etching is protected without photoresist in sour cerium solution, produces adding thermal resistance 2, acetone removes photoresist (see attached drawing
2[5])。
[4] stripping technology photoetching motivates electrode pad under electrode 10 under electrode, detection capacitor lower electrode 11, excitation electrode
12, the figure of capacitor lower electrode pad 13 and adding thermal resistance pad 14 is detected, successively 40nm titanium film is sputtered and 200nm gold is thin
Film, adhesion layer of the titanium film as gold thin film and lpcvd silicon nitride film 8 remove photoresist in acetone, and removing obtains electricity under excitation electrode
Electrode pad 12, detection capacitor lower electrode pad 13 and adding thermal resistance pad under pole 10, detection capacitor lower electrode 11, excitation electrode
14.(see attached drawing 2 [6])
[5] as corrosion masking in the successive deposition of subsequent technique of plasma enhanced CVD (PECVD) technology
Layer first layer PECVD silicon nitride film 15, as the amorphous silicon membrane 16 of sacrificial layer and as 3 structural material of two-end fixed beam
Second layer PECVD silicon nitride film 17.(see attached drawing 2 [7])
[6] stripping technology photoetching excitation electrode top electrode 18, detection capacitor top electrode 19, excitation electrode top electrode pad 20
With the figure of detection capacitor top electrode pad 21,40nm titanium film and 200nm gold thin film are successively sputtered, is removed photoresist in acetone, is removed
Obtain excitation electrode top electrode 18, detection capacitor top electrode 19, excitation electrode top electrode pad 20 and detection capacitor top electrode weldering
Disk 21.(see attached drawing 2 [8])
[7] plasma enhanced CVD (PECVD) technology makes third layer PECVD silicon nitride film again
22, the second layer PECVD silicon nitride film 17 made in the film and [5] step process is the structural material of two-end fixed beam 3.
(see attached drawing 2 [9])
[8] in front side of silicon wafer photoetching forming tank 23, using in sustained release hydrofluoric acid solution wet etching and dry etching extremely
A kind of few method removes third layer PECVD silicon nitride film 22, the second layer PECVD silicon nitride film being exposed in forming tank 23
17, acetone removes photoresist.(see attached drawing 2 [10])
[9] electrode pad 12, detection capacitor lower electrode pad 13, adding thermal resistance weldering in the case where front side of silicon wafer photoetching motivates electrode
The figure of disk 14.Dry etching motivates electrode pad 12 under electrode, detection capacitor lower electrode pad 13 and adding thermal resistance pad 14
Third layer PECVD silicon nitride film 22, second layer PECVD silicon nitride film 17, amorphous silicon membrane 16, first layer above
PECVD silicon nitride film 15 (see attached drawing 2 [11])
[10] in the figure of front side of silicon wafer photoetching excitation electrode top electrode pad 20 and detection capacitor top electrode pad 21.It is dry
Third layer PECVD silicon nitride film above method etching excitation electrode top electrode pad 20 and detection capacitor top electrode pad 21
22, acetone removes photoresist.(see attached drawing 2 [12])
[11] back side photoetching forms back corrosion window 24, successively rotten using dry etching and sustained release hydrofluoric acid solution wet process
Etching off is except the lpcvd silicon nitride film 8 and silica membrane 7 in back corrosion window 24.Front is coated with the AR- of resistance to KOH corrosion
PC504 glue, in anisotropy KOH corrosive liquid wet etching be located in back corrosion window, 2 lower part silicon substrate of adding thermal resistance,
It removes photoresist in trichloro ethylene.(see attached drawing 2 [13])
[12] scribing, 250 μm of scribing depth.
[13] with below KOH solution wet etching front forming tank 23 and two-end fixed beam 3 amorphous silicon membrane 16, be located at
Carry on the back corrosion window 24 in, adding thermal resistance 2 below remaining silicon substrate.(see attached drawing 2 [14])
Encapsulating package and cover board front baking are carried out thermal desorption degasification, are welded chip using eutectic bonding technology by [14] fragment
It is connected on shell pedestal, bonding wire between the pin on chip on pad and shell, finally the sealing cap in vacuum system.
Obviously, above description is not limitation of the invention, and the present invention is also not limited to the example above, the art
The variations, modifications, additions or substitutions done within the essential scope of the present invention of technical staff, also should belong to protection of the invention
Range.
Claims (2)
1. a kind of based on static excitation/capacitor inspection side micro-bridge resonator film thermoelectric converter, it is characterised in that: thin film thermoelectric
Converter by be produced on same silicon wafer (1) adding thermal resistance (2), two-end fixed beam (3), excitation electrode (4) and detect capacitor
(5) it forms, makes and encapsulate using following processing step:
[1] using thermal oxidation method in silicon wafer (1) two-sided silicon dioxide thin film growth (7)；
[2] thin in silica membrane (7) surface deposition lpcvd silicon nitride using low-pressure chemical vapor phase deposition (LPCVD) technique
Film (8)；
[3] front side of silicon wafer sputtering NiCrSi film (9), photoetching adding thermal resistance (2) figure corrode adding thermal resistance (2) out；
[4] photoetching motivates electrode pad (12), detection under electrode (10) under electrode, detection capacitor lower electrode (11), excitation electrode
The figure of capacitor lower electrode pad (13) and adding thermal resistance pad (14), successively sputters titanium film and gold thin film, and titanium film is gold
The adhesion layer of film and lpcvd silicon nitride film (8), stripping technology obtain electrode (10) under excitation electrode, electricity under detection capacitor
Electrode pad (12), detection capacitor lower electrode pad (13) and adding thermal resistance pad (14) under pole (11), excitation electrode；
[5] plasma enhanced CVD (PECVD) technology successively deposit first layer PECVD silicon nitride film (15),
Amorphous silicon membrane (16) and second layer PECVD silicon nitride film (17), respectively as corrosion masking layer, the sacrifice in subsequent technique
The structural material of layer and two-end fixed beam (3)；
[6] photoetching excitation electrode top electrode (18), detection capacitor top electrode (19), excitation electrode top electrode pad (20) and detection
The figure of capacitor top electrode pad (21), sputters titanium film and gold thin film, and stripping technology obtains excitation electrode top electrode (18), inspection
Survey capacitor top electrode (19), excitation electrode top electrode pad (20) and detection capacitor top electrode pad (21)；
[7] plasma enhanced CVD (PECVD) technology makes third layer PECVD silicon nitride film again
(22), the second layer PECVD silicon nitride film (17) made in the film and [5] step process is the knot of two-end fixed beam (3)
Structure material；
[8] in front side of silicon wafer photoetching forming tank (23), at least one in sustained release hydrofluoric acid solution wet etching, dry etching is used
Kind method removes third layer PECVD silicon nitride film (22), the second layer PECVD silicon nitride film being exposed in forming tank (23)
(17)；
[9] electrode pad (12), detection capacitor lower electrode pad (13), adding thermal resistance weldering in the case where front side of silicon wafer photoetching motivates electrode
The figure of disk (14), dry etching motivate electrode pad (12) under electrode, detection capacitor lower electrode pad (13) and adding thermal resistance
Third layer PECVD silicon nitride film (22), the second layer PECVD silicon nitride film (17), amorphous silicon membrane of pad (14) above
(16), first layer PECVD silicon nitride film (15)；
[10] it in the figure of front side of silicon wafer photoetching excitation electrode top electrode pad (20) and detection capacitor top electrode pad (21), does
The third layer PECVD silicon nitride of method etching excitation electrode top electrode pad (20) and detection capacitor top electrode pad (21) above is thin
Film (22)；
[11] back side photoetching forms back corrosion window (24), successively using dry etching and sustained release hydrofluoric acid solution wet etching
Lpcvd silicon nitride film (8) and silica membrane (7) in removal back corrosion window (24), front protecting, anisotropy rot
It loses in liquid and corrodes in back corrosion window (24), the partial silicon substrate of adding thermal resistance (2) below；
[12] scribing；
[13] amorphous silicon membrane (16) between wet etching two-end fixed beam (3) and adding thermal resistance (2) and be located at back corrosion window
In mouthful (24), adding thermal resistance (2) remaining silicon substrate below；
Chip is welded on shell pedestal by [14] fragment, eutectic bonding technology, the pin on chip on pad and shell it
Between bonding wire, last sealing cap in a vacuum chamber.
2. it is according to claim 1 based on static excitation/capacitance detecting micro-bridge resonator film thermoelectric converter,
Be characterized in that: the micro-bridge resonator (6) of two-end fixed beam (3), excitation electrode (4) and detection capacitor (5) composition is swashed using electrostatic
Encourage, capacitor vibration pick-up mode works, by excitation electrode (4) load identical with two-end fixed beam (3) intrinsic frequency exchange
Electric signal is at resonant state, the vibration signal of detection capacitor (5) detection two-end fixed beam (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610541376.2A CN106449960B (en) | 2016-07-01 | 2016-07-01 | A kind of structure and production method based on static excitation/capacitance detecting micro-bridge resonator film thermoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610541376.2A CN106449960B (en) | 2016-07-01 | 2016-07-01 | A kind of structure and production method based on static excitation/capacitance detecting micro-bridge resonator film thermoelectric converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106449960A CN106449960A (en) | 2017-02-22 |
| CN106449960B true CN106449960B (en) | 2018-12-25 |
Family
ID=58183944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610541376.2A Active CN106449960B (en) | 2016-07-01 | 2016-07-01 | A kind of structure and production method based on static excitation/capacitance detecting micro-bridge resonator film thermoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106449960B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109987570B (en) * | 2019-03-29 | 2022-11-25 | 中国计量大学 | Thermoelectric converter structure based on electromagnetic excitation monocrystalline silicon resonant beam and manufacturing method |
| CN111721469A (en) * | 2020-06-17 | 2020-09-29 | 中国计量大学 | High-sensitivity miniature Pirani gauge |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1401980A (en) * | 2001-08-24 | 2003-03-12 | 中国科学院电子学研究所 | Method for mfg. microstructure resonance beam pressure sensor using SiNx as beam |
| US20050162040A1 (en) * | 2002-02-13 | 2005-07-28 | Commissariat A L'energie Atomique | Tunable bulk acoustic wave mems microresonator |
| CN101262958A (en) * | 2005-03-04 | 2008-09-10 | 国家研究院 | Surface micromechanical process for manufacturing micromachined capacitive ultra-acoustic transducers |
| CN101566506A (en) * | 2008-04-22 | 2009-10-28 | 中国计量学院 | Structure of film thermoelectric converter based on micro bridge resonator and fabricating method thereof |
| CN101566643A (en) * | 2008-04-22 | 2009-10-28 | 中国计量学院 | Structure of film thermoelectric converter based on bi-material microcantilevel and fabricating method thereof |
| CN105174200A (en) * | 2015-08-28 | 2015-12-23 | 刘丽霞 | Structure and manufacturing method of novel resonant thin-film thermoelectric converter |
| CN105236344A (en) * | 2015-09-01 | 2016-01-13 | 中国计量学院 | Structure and manufacturing method of novel resonant thin-film thermoelectric converter |
-
2016
- 2016-07-01 CN CN201610541376.2A patent/CN106449960B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1401980A (en) * | 2001-08-24 | 2003-03-12 | 中国科学院电子学研究所 | Method for mfg. microstructure resonance beam pressure sensor using SiNx as beam |
| US20050162040A1 (en) * | 2002-02-13 | 2005-07-28 | Commissariat A L'energie Atomique | Tunable bulk acoustic wave mems microresonator |
| CN101262958A (en) * | 2005-03-04 | 2008-09-10 | 国家研究院 | Surface micromechanical process for manufacturing micromachined capacitive ultra-acoustic transducers |
| CN101566506A (en) * | 2008-04-22 | 2009-10-28 | 中国计量学院 | Structure of film thermoelectric converter based on micro bridge resonator and fabricating method thereof |
| CN101566643A (en) * | 2008-04-22 | 2009-10-28 | 中国计量学院 | Structure of film thermoelectric converter based on bi-material microcantilevel and fabricating method thereof |
| CN105174200A (en) * | 2015-08-28 | 2015-12-23 | 刘丽霞 | Structure and manufacturing method of novel resonant thin-film thermoelectric converter |
| CN105236344A (en) * | 2015-09-01 | 2016-01-13 | 中国计量学院 | Structure and manufacturing method of novel resonant thin-film thermoelectric converter |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106449960A (en) | 2017-02-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104089727B (en) | The high performance pressure sensor chip and manufacture method of integrated temperature | |
| CN201653604U (en) | Pressure sensor | |
| CN103926028B (en) | A kind of structural design of foil gauge and manufacture craft | |
| CN108254106B (en) | Preparation method of silicon-glass-silicon four-layer structure resonant MEMS pressure sensor | |
| CN103983395B (en) | A kind of micropressure sensor and preparation thereof and detection method | |
| CN104062059B (en) | A kind of MEMS piezoresistive pressure sensor and its manufacture method | |
| CN105174198A (en) | Acceleration sensor of package structure and preparation method thereof | |
| CN103616123A (en) | Pressure sensor and manufacturing method thereof | |
| CN106449960B (en) | A kind of structure and production method based on static excitation/capacitance detecting micro-bridge resonator film thermoelectric converter | |
| CN105181231A (en) | Pressure sensor of packaging structure and preparation method thereof | |
| CN106441254B (en) | A kind of tri- axis inertial sensor of MEMS and its processing method based on thermal expansion air-flow | |
| US11686637B2 (en) | Silicon carbide-based combined temperature-pressure micro-electro-mechanical system (MEMS) sensor chip and preparation method thereof | |
| CN102072967A (en) | Gold-gold bonding process-based thermal type wind speed and direction sensor and preparation method thereof | |
| WO2016066106A1 (en) | All-silicon mems methane sensor, fuel gas detection application, and manufacturing method | |
| CN102368042B (en) | Microflow sensor | |
| CN103196596B (en) | Nanometer film pressure sensor based on sacrificial layer technology and manufacturing method thereof | |
| CN109437089A (en) | The preparation process flow of the micro field sensor of cantilever beam structure | |
| CN111351607B (en) | Manufacturing method of temperature and pressure composite sensor | |
| CN111397776B (en) | Temperature and pressure composite sensor | |
| Goericke et al. | High temperature compatible aluminum nitride resonating strain sensor | |
| CN105675917B (en) | A kind of hot type air velocity transducer and its packaging method | |
| CN103968997B (en) | A kind of SOI micro Pirani gage and preparation method thereof | |
| CN115683406A (en) | Silicon-based film pressure-sensitive element and preparation method thereof | |
| CN105174200A (en) | Structure and manufacturing method of novel resonant thin-film thermoelectric converter | |
| CN104316577A (en) | Methane sensor based on flip-chip packaging, as well as preparation method and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20170222 Assignee: Xinchang China Metrology University Enterprise Innovation Research Institute Co.,Ltd. Assignor: China Jiliang University Contract record no.: X2021330000071 Denomination of invention: Structure and manufacturing method of thin film thermoelectric converter based on electrostatic excitation / capacitance detection microbridge resonator Granted publication date: 20181225 License type: Common License Record date: 20210816 |
|
| EC01 | Cancellation of recordation of patent licensing contract | ||
| EC01 | Cancellation of recordation of patent licensing contract |
Assignee: Xinchang China Metrology University Enterprise Innovation Research Institute Co.,Ltd. Assignor: China Jiliang University Contract record no.: X2021330000071 Date of cancellation: 20211231 |