CN106444198A - 一种tft基板及其制造方法、液晶面板 - Google Patents
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Abstract
本发明提供了一种TFT基板,所述源极、漏极上形成有第一绝缘层,在第一绝缘层上设有第一过孔,第一绝缘层上形成有透明电极,在透明电极上形成有第三绝缘层,第三绝缘层上形成有第三过孔,在第三绝缘层上形成有公共电极,在公共电极上设置有第二绝缘层,在第二绝缘层位于第三过孔上方设有第二过孔,第二绝缘层上设置有像素电极,像素电极经第二过孔、第三过孔与透明电极导通,像素电极、第二绝缘层和公共电极之间形成第一存储电容,公共电极、第三绝缘层和透明电极之间形成第二存储电容。本发明还公开一种制造方法以及液晶面板。与现有技术相比,达到了储存电容加倍,大大解决了高像素密度时储存电容偏小而引起的串扰和闪烁的电性问题。
Description
技术领域
本发明涉及一种液晶面板技术,特别是具有加倍存储电容的一种TFT基板及其制造方法、液晶面板。
背景技术
液晶面板由于其轻薄化和低功耗等优点,是目前市场中的主流显示装置,目前手机屏幕往往采用FFS这种显示模式,因其有较宽的视角和不易受液晶盒厚轻微变化的影响,俗称为硬屏,显示器外观看起来简单明快、时尚大气,成为液晶显示器发展的趋势,为使用方便以及美观的需要,现在的数码产品对高分辨率的需求越来越迫切,分辨率越高,画素越小,储存电容越小。但是在液晶屏幕中,TFT器件存在漏电,这就需要较大的储存电容Cst,以防止在一帧的时间TFT漏电引起Piexl(像素)灰阶变化,灰阶变化会引起液晶屏幕光学品质下降,如串扰和闪烁等现象。
现有的制程工艺是在第一绝缘层(PLN层)上直接沉积公共电极(BITO、共电极COM)、第一绝缘层(PV层)、像素电极(TITO(PE极))构成MIM结构,此MIM结构的平行板电极形成存储电容Cst,因像素密度(PPI)很高,画素面积较小,所以形成的平行板的存储电容较小,无法解决串扰和闪烁等现象。
发明内容
为克服现有技术的不足,本发明提供一种TFT基板及其制造方法、液晶面板,从而解决在高像素密度下存储电容偏小而引起的串扰和闪烁的电性问题。
本发明提供了一种TFT基板,包括基板、形成于基板上的栅极、源极、漏极,所述源极、漏极上形成有第一绝缘层,在第一绝缘层上设有第一过孔,所述第一绝缘层上形成有透明电极,所述透明电极经第一过孔与漏极导通,在透明电极上形成有第三绝缘层,所述第三绝缘层上形成有第三过孔,在第三绝缘层上形成有公共电极,在公共电极上设置有第二绝缘层,在第二绝缘层位于第三过孔上方设有第二过孔,所述第二绝缘层上设置有像素电极,像素电极经第二过孔、第三过孔与透明电极导通,所述像素电极、第二绝缘层和公共电极之间形成第一存储电容,公共电极、第三绝缘层和透明电极之间形成第二存储电容,所述第一存储电容与第二存储电容并联。
进一步地,所述第二存储电容形成于公共电极、第三绝缘层和透明电极的交叠处。
进一步地,所述第一存储电容形成于像素电极、第二绝缘层和公共电极的交叠处。
本发明提供了一种TFT基板的制造方法,包括如下步骤:
步骤一S01、在基板上依次形成栅极、源极以及漏极;
步骤二S02、在源极、漏极上涂布第一绝缘层并在第一绝缘层上采用黄光工艺和刻蚀工艺制作第一过孔;
步骤三S03、在第一绝缘层上沉积第三透明导电膜层,再通过光罩工艺得到透明电极,所述透明电极通过第一过孔与漏极导通;
步骤四S04、在透明电极上沉积第三绝缘层,并采用黄光工艺和刻蚀工艺在第三绝缘层上位于第一过孔处形成第三过孔;
步骤五S05、在第三绝缘层上沉积第一透明导电层,并通过光阻遮挡以及蚀刻工艺形成公共电极,所述透明电极、第三绝缘层以及公共电极的交叠处形成第二储存电容;
步骤六S06、在公共电极上沉积第二绝缘层,第二绝缘层通过黄光工艺和刻蚀工艺在第二绝缘层上位于第三过孔上方形成第二过孔;
步骤七S07、通过沉积工艺在第一绝缘层上沉第一透明导电层,通过光罩工艺刻蚀图案形成像素电极,所述像素电极通过第二过孔、第三过孔与透明电极导通,所述像素电极、第二绝缘层以及公共电极的交叠处形成第一储存电容。
进一步地,所述步骤三S03和步骤七S07的光罩工艺中使用同一掩膜版。
进一步地,所述第一储存电容与第二储存电容并联。
本发明还提供了一种液晶面板,包括所述的TFT基板。
本发明与现有技术相比,通过在现有的TFT基板的第一绝缘层(PLN绝缘层)与公共电极(BITO(COM极))之间增加一层透明电极以及一层第三绝缘层,形成MIMIM架构的双层平行板结构,形成两个并联的存储电容,在不额外制作光罩的掩模版及不影响开口率的前提下,达到了储存电容加倍,最大限度上提高液晶面板中的储存电容,大大解决了高像素密度时储存电容偏小而引起的串扰和闪烁的电性问题,提高其光学性能和产品的竞争力。
附图说明
图1是本发明的截面图。
图2是本发明的制造方法的流程图。
具体实施方式
下面结合附图和实施例对本发明作进一步详细说明。
本发明中,针对的改进仅为漏极1以上部分,漏极1以下的部分并未改进,因此附图1中仅示出了TFT基板的漏极1以上部分的结构。
如图1所示,本发明的一种TFT基板,包括基板(图中未示出)、形成于基板上的栅极(图中未示出)、源极(图中未示出)、漏极1,所述源极、漏极1上形成有第一绝缘层2,第一绝缘层2为有机光阻膜(PLN)绝缘层,在第一绝缘层2上设有第一过孔3,所述第一绝缘层2上形成有透明电极4,该透明电极4也为像素电极(PE),所述透明电极4经第一过孔3与漏极1导通,在透明电极4上形成有第三绝缘层(PV1绝缘层)6,所述第三绝缘层6上形成有第三过孔5,在第三绝缘层6上形成有公共电极(BITO(COM极))7,在公共电极7上设置有第二绝缘层(PV绝缘层)8,在第二绝缘层8位于第三过孔5上方设有第二过孔10,所述第二绝缘层8上设置有像素电极(TITO(PE极)9,像素电极9经第二过孔10、第三过孔5与透明电极4导通,所述像素电极9、第二绝缘层8、公共电极7、第三绝缘层6、透明电极4之间形成MIMIM架构的一种双层平行板结构,所述像素电极9、第二绝缘层8和公共电极7的交叠处形成第一存储电容11,公共电极7、第三绝缘层6和透明电极4的交叠处形成第二存储电容12,所述第一存储电容11与第二存储电容12并联,实现了存储电容Cst加倍。
如图2所示,本发明的一种TFT基板的制造方法,包括如下步骤:
步骤一S01、在基板上通过沉积、黄光、刻蚀工艺得具有图形的栅极,在栅极上沉积栅极绝缘层,栅极绝缘层上沉积半导体金属氧化物层;对半导体金属氧化物层进行黄光工艺和刻蚀工艺制得具有图形的半导体金属氧化物层;在具有图形的半导体金属氧化物层上沉积、再依次采用黄光工艺和刻蚀工艺制得具有图形的源极、漏极1;该步骤一为现有技术,在此不再详细描述,其实现采用现有TFT基板的制程获得具有源极、漏极1的基板;
步骤二S02、在源极、漏极1上涂布第一绝缘层(有机光阻膜(PLN)绝缘层)2并在第一绝缘层2上采用黄光工艺和刻蚀工艺制作第一过孔(PLN hole)3;
步骤三S03、在第一绝缘层2上沉积第三透明导电膜层,使第三透明导电膜层覆盖在第一绝缘层2上以及第一过孔3上,再通过光罩工艺得到透明电极4,所述透明电极4通过第一过孔3与漏极1导通;
步骤四S04、在透明电极4上沉积第三绝缘层6,并采用黄光工艺和刻蚀工艺在第三绝缘层6上位于第一过孔3处形成第三过孔5;
步骤五S05、在第三绝缘层6上沉积第一透明导电层,并通过光阻遮挡不需要蚀刻的部分以及通过蚀刻工艺形成具有图形化的公共电极(BITO(COM极))7,所述透明电极4、第三绝缘层6以及公共电极7的交叠处形成第二储存电容12;
步骤六S06、在公共电极7上沉积第二绝缘层8,第二绝缘层8通过黄光工艺和刻蚀工艺在第二绝缘层8上位于第三过孔5上方形成第二过孔(PV hole)10;
步骤七S07、通过沉积工艺在第一绝缘层8上沉第一透明导电层,通过光罩工艺刻蚀图案形成像素电极9,所述像素电极9通过第二过孔10、第三过孔5与透明电极4导通,所述像素电极9、第二绝缘层8以及公共电极7的交叠处形成第一储存电容11,所述第一储存电容11与第二储存电容12并联;所述透明电极4、公共电极7以及像素电极9。
本发明通过在现有的TFT基板的第一绝缘层(PLN绝缘层)与公共电极(BITO(COM极))之间增加一层透明电极以及一层第三绝缘层,这三层电极形成的MIMIM架构就形成了上下的双层电容并联,使得存储电容Cst加倍。
所述步骤三S03和步骤七S07的光罩工艺中使用同一掩膜版。形成透明电极4所使用的掩膜版与形成像素电极9的掩膜版共用,使得无需额外制作掩膜板,因此不会增加成本。
新增的透明电极4不会占用开口区,而且透明电极4通过原制程的第一过孔3、第二过孔10、第三过孔5进行导通,不用增加其他过孔,所以不会占用开口区,不会影响像素的开口率。
一般情况下,面板周边仅在测试区才会有用于扎针量测的像素电极图案区,采用本发明的形成一层透明电极4,在面板周边仍会有通过透明电极4使像素电极与漏极导通,因此,不会有断路或断路的风险出现。
本发明还提供了一种液晶面板,包括上述的具有MIMIM架构的TFT基板,在此不再赘述。本发明尤其适用于FFS显示模式的液晶面板。
虽然已经参照特定实施例示出并描述了本发明,但是本领域的技术人员将理解:在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下,可在此进行形式和细节上的各种变化。
Claims (7)
1.一种TFT基板,包括基板、形成于基板上的栅极、源极、漏极(1),其特征在于:所述源极、漏极(1)上形成有第一绝缘层(2),在第一绝缘层(2)上设有第一过孔(3),所述第一绝缘层(2)上形成有透明电极(4),所述透明电极(4)经第一过孔(3)与漏极(1)导通,在透明电极(4)上形成有第三绝缘层(6),所述第三绝缘层(6)上形成有第三过孔(5),在第三绝缘层(6)上形成有公共电极(7),在公共电极(7)上设置有第二绝缘层(8),在第二绝缘层(8)位于第三过孔(5)上方设有第二过孔(10),所述第二绝缘层(8)上设置有像素电极(9),像素电极(9)经第二过孔(10)、第三过孔(5)与透明电极(4)导通,所述像素电极(9)、第二绝缘层(8)和公共电极(7)之间形成第一存储电容(11),公共电极(7)、第三绝缘层(6)和透明电极(4)之间形成第二存储电容(12),所述第一存储电容(11)与第二存储电容(12)并联。
2.根据权利要求1所述的TFT基板,其特征在于:所述第二存储电容(12)形成于公共电极(7)、第三绝缘层(6)和透明电极(4)的交叠处。
3.根据权利要求1所述的TFT基板,其特征在于:所述第一存储电容(11)形成于像素电极(9)、第二绝缘层(8)和公共电极(7)的交叠处。
4.一种TFT基板的制造方法,其特征在于:包括如下步骤:
步骤一S01、在基板上依次形成栅极、源极以及漏极(1);
步骤二S02、在源极、漏极(1)上涂布第一绝缘层(2)并在第一绝缘层(2)上采用黄光工艺和刻蚀工艺制作第一过孔(3);
步骤三S03、在第一绝缘层(2)上沉积第三透明导电膜层,再通过光罩工艺得到透明电极(4),所述透明电极(4)通过第一过孔(3)与漏极(1)导通;
步骤四S04、在透明电极(4)上沉积第三绝缘层(6),并采用黄光工艺和刻蚀工艺在第三绝缘层(6)上位于第一过孔(3)处形成第三过孔(5);
步骤五S05、在第三绝缘层(6)上沉积第一透明导电层,并通过光阻遮挡以及蚀刻工艺形成公共电极(7),所述透明电极(4)、第三绝缘层(6)以及公共电极(7)的交叠处形成第二储存电容(12);
步骤六S06、在公共电极(7)上沉积第二绝缘层(8),第二绝缘层(8)通过黄光工艺和刻蚀工艺在第二绝缘层(8)上位于第三过孔(5)上方形成第二过孔(10);
步骤七S07、通过沉积工艺在第一绝缘层(8)上沉第一透明导电层,通过光罩工艺刻蚀图案形成像素电极(9),所述像素电极(9)通过第二过孔(10)、第三过孔(5)与透明电极(4)导通,所述像素电极(9)、第二绝缘层(8)以及公共电极(7)的交叠处形成第一储存电容(11)。
5.根据权利要求4所述的TFT基板的制造方法,其特征在于:所述步骤三S03和步骤七S07的光罩工艺中使用同一掩膜版。
6.根据权利要求5所述的TFT基板的制造方法,其特征在于:所述第一储存电容(11)与第二储存电容(12)并联。
7.一种液晶面板,其特征在于:包括如权利要求1-3所述的TFT基板。
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