CN105652541A - 阵列基板的制作方法及液晶显示面板 - Google Patents

阵列基板的制作方法及液晶显示面板 Download PDF

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CN105652541A
CN105652541A CN201610041412.9A CN201610041412A CN105652541A CN 105652541 A CN105652541 A CN 105652541A CN 201610041412 A CN201610041412 A CN 201610041412A CN 105652541 A CN105652541 A CN 105652541A
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layer
semiconductor layer
photoresist
light shield
array substrate
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CN105652541B (zh
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徐向阳
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to CN201610041412.9A priority Critical patent/CN105652541B/zh
Priority to PCT/CN2016/083058 priority patent/WO2017124673A1/zh
Priority to US15/112,195 priority patent/US9947754B1/en
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    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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Abstract

本发明提供一种阵列基板的制作方法及液晶显示面板，本发明的阵列基板的制作方法，半导体层上设置有遮光层，该遮光层为一种具有吸光特性的正性光刻胶，该遮光层采用与蚀刻形成半导体层所用的光阻层为同层设计，在半导体层完成蚀刻后，通过对光阻层进行烧光阻得到该尺寸小于半导体层的遮光层，以遮挡光线对半导体层的照射，降低漏电流，然后通过磷离子注入形成半导体层两端的欧姆接触层，该制作方法简单易行，效果良好；本发明的液晶显示面板，半导体层上设有遮光层，该遮光层同时具备蚀刻阻挡和遮光的作用，能够取代现有技术中彩膜基板上的黑色矩阵，遮挡光线对半导体层的照射，降低漏电流，简化面板结构，提升开口率。

Description

阵列基板的制作方法及液晶显示面板
技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板的制作方法及液晶显示面板。
背景技术
随着显示技术的发展，液晶显示器(LiquidCrystalDisplay，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
现有市场上的液晶显示装置大部分为背光型液晶显示器，其包括液晶显示面板及背光模组(backlightmodule)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。
通常液晶显示面板由彩膜(CF，ColorFilter)基板、薄膜晶体管(TFT，ThinFilmTransistor)阵列基板、夹于彩膜基板与薄膜晶体管阵列基板之间的液晶(LC，LiquidCrystal)及密封胶框(Sealant)组成，其成型工艺一般包括：前段阵列(Array)制程(薄膜、黄光、蚀刻及剥膜)、中段成盒(Cell)制程(TFT基板与CF基板贴合)及后段模组组装制程(驱动IC与印刷电路板压合)。其中，前段Array制程主要是形成TFT阵列基板，以便于控制液晶分子的运动；中段Cell制程主要是在TFT阵列基板与CF基板之间添加液晶；后段模组组装制程主要是驱动IC压合与印刷电路板的整合，进而驱动液晶分子转动，显示图像。TFT阵列基板上设置有数条扫描线和数条数据线，该数条扫描线和数条数据线限定出多个像素单元，每个像素单元内设置有薄膜晶体管和像素电极，薄膜晶体管的栅极与相应的栅线相连，当栅线上的电压达到开启电压时，薄膜晶体管的源极和漏极导通，从而将数据线上的数据电压输入至像素电极。传统的TFT阵列基板上像素单元的结构如图1所示，包括自下而上依次层叠设置的基板100、栅极200、栅极绝缘层300、有源层400、源极610、漏极620、绝缘保护层700、及像素电极800。由于薄膜晶体管的有源层400对光线的照射比较敏感，尤其是非晶硅(a-Si)半导体材料，环境光照射后会导致薄膜晶体管的漏电流大大增加，从而产生串扰、电压闪变等现象，进而影响到显示画面的质量。为了避免半导体层受环境光的照射，通常在液晶显示面板的彩膜基板侧会做一层黑色矩阵(BlackMatrix，BM)遮光层，这种方法虽然可以有效防止有源层400透光，但遮光层的存在会降低液晶显示面板的开口率。
发明内容
本发明的目的在于提供一种阵列基板的制作方法，将用于蚀刻形成半导体层的光阻层进行烧光阻，得到位于半导体层上的遮光层，制作方法简单。
本发明的目的还在于提供一种液晶显示面板，阵列基板的半导体层上设有遮光层，从而可省去彩膜基板的黑色矩阵层，面板结构简单，开口率高。
为实现上述目的，本发明提供一种阵列基板的制作方法，包括如下步骤：
步骤1、提供一第一衬底基板，在所述第一衬底基板上沉积栅极金属层，并对所述栅极金属层进行图案化处理，得到栅极；
步骤2、在所述栅极、及第一衬底基板上沉积栅极绝缘层，在所述栅极绝缘层上沉积一层非晶硅层；
步骤3、在所述非晶硅层上涂布一层光刻胶膜，提供灰阶掩模板，对该层光刻胶膜进行曝光和显影，得到光阻层，所述光阻层包括位于中间的第一光阻层、及厚度小于第一光阻层且位于第一光阻层两侧的第二光阻层；
所述光刻胶膜的材料为具有吸光特性的正性光刻胶；
步骤4、以所述光阻层为遮蔽层，对所述非晶硅层进行蚀刻，得到半导体层；
步骤5、对所述光阻层进行烧光阻，其中第二光阻层被完全去除掉，第一光阻层的厚度减少，得到遮光层，所得到遮光层的尺寸小于所述半导体层的尺寸；
步骤6、以遮光层作为遮蔽层对所述半导体层的两端进行磷离子注入，得到位于所述半导体层两端的欧姆接触区、及位于中间的未经过离子注入的沟道区；
步骤7、在所述遮光层、半导体层、及栅极绝缘层上沉积源漏极金属层，并对所述源漏极金属层进行图案化处理，得到源极和漏极，所述源极和漏极分别与所述半导体层两端的欧姆接触区相接触；
步骤8、在所述源极、漏极、遮光层、及栅极绝缘层上沉积绝缘保护层，并对绝缘保护层进行图案化处理，得到位于所述漏极上方的贯穿绝缘保护层的过孔；
步骤9、在所述绝缘保护层上沉积一层透明导电层，并对所述透明导电层进行图案化处理，得到像素电极，所述像素电极通过过孔与漏极相接触。
所述步骤3中，所述光刻胶膜的膜厚为1.8～3.0μm；所述步骤4中，对所述光阻层进行烧光阻后，所得到的遮光层的厚度为0.7～1.7μm。
所述步骤1中，通过物理气相沉积法沉积栅极金属层，所沉积的栅极金属层的膜厚为所述栅极金属层的材料为钼、钛、铝、铜中的一种或多种的堆栈组合；所述步骤7中通过物理气相沉积法沉积源漏极金属层，所沉积的源漏极金属层的膜厚为所述源漏极金属层的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
所述步骤2中，通过化学气相沉积法沉积栅极绝缘层和非晶硅层，所沉积的栅极绝缘层的膜厚为所沉积的非晶硅层的膜厚为所述栅极绝缘层为氮化硅层；所述步骤8中，通过化学气相沉积法沉积绝缘保护层，所沉积的绝缘保护层为膜厚为的，所述的绝缘保护层为氮化硅层。
所述步骤9中，通过物理气相沉积法沉积透明导电层，所沉积透明导电层的膜厚为所述透明导电层的材料为铟锡氧化物、铟锌氧化物、铝锡氧化物、铝锌氧化物、铟锗锌氧化物中的一种或多种。
本发明还提供一种液晶显示面板，包括：阵列基板、与所述阵列基板相对设置的彩膜基板、以及夹设于所述阵列基板与彩膜基板之间的液晶层；
所述阵列基板包括：第一衬底基板、设于所述第一衬底基板上的数条栅极扫描线、数条数据线、以及由数条栅极扫描线与数条数据线相互绝缘交错划分出的多个阵列排布的像素单元；
所述彩膜基板包括：第二衬底基板、设于所述彩膜基板靠近阵列基板一侧表面的彩色滤光层、设于所述彩色滤光层上的公共电极层、及设于所述公共电极层上的间隔物层；
所述阵列基板上的每一像素单元均包括：形成于所述第一衬底基板上的栅极、形成于所述栅极及第一衬底基板上栅极绝缘层、形成于所述栅极绝缘层上的半导体层、位于所述半导体层上的遮光层、形成于所述遮光层、半导体层、及栅极绝缘层上的源极和漏极、形成于所述源极、漏极、遮光层、及栅极绝缘层上绝缘保护层、及形成于所述绝缘保护层上的像素电极；
所述遮光层同时具备蚀刻阻挡和遮光的作用，尺寸小于所述半导体层的尺寸，材料为具有吸光特性的正性光刻胶。
所述遮光层的厚度为0.7～1.7μm。
所述半导体层包括位于中间的沟道区及位于两端的欧姆接触区，所述遮光层完全覆盖所述沟道区，所述欧姆接触区通过以所述遮光层为遮蔽层，对所述半导体层的两端进行磷离子注入得到，所述源极和漏极分别与所述半导体层两端的欧姆接触区相接触。
所述绝缘保护层对应所述漏极上方设有贯穿所述绝缘保护层的通孔，所述像素电极通过通孔与所述漏极相接触。
所述半导体层通过以设于非晶硅层上的光阻层为遮蔽层，对非晶硅层进行蚀刻得到，所述遮光层由该光阻层通过烧光阻得到。
本发明的有益效果：本发明提供一种阵列基板的制作方法及液晶显示面板，本发明的阵列基板的制作方法，半导体层上设置有遮光层，该遮光层为一种具有吸光特性的正性光刻胶，该遮光层采用与蚀刻形成半导体层所用的光阻层同层设计，在半导体层完成蚀刻后，通过对光阻层进行烧光阻得到该尺寸小于半导体层的遮光层，以遮挡光线对半导体层的照射，降低漏电流，然后通过磷离子注入形成半导体层两端的欧姆接触层，该制作方法简单易行，效果良好；本发明的液晶显示面板，半导体层上设有遮光层，该遮光层同时具备蚀刻阻挡和遮光的作用，能够取代现有技术中彩膜基板上的黑色矩阵，遮挡光线对半导体层的照射，降低漏电流，简化面板结构，提升开口率。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的TFT阵列基板的结构示意图；
图2为本发明的阵列基板的制作方法的示意流程图；
图3为本发明的阵列基板的制作方法的步骤1的示意图；
图4为本发明的阵列基板的制作方法的步骤2的示意图；
图5为本发明的阵列基板的制作方法的步骤3中对光刻胶膜进行曝光的示意图；
图6为本发明的阵列基板的制作方法的步骤3中对光刻胶膜曝光后进行显影的示意图；
图7为本发明的阵列基板的制作方法的步骤4的示意图；
图8为本发明的阵列基板的制作方法的步骤5的示意图；
图9为本发明的阵列基板的制作方法的步骤6的示意图；
图10为本发明的阵列基板的制作方法的步骤7的示意图；
图11为本发明的阵列基板的制作方法的步骤8的示意图；
图12为本发明的阵列基板的制作方法的步骤9的示意图；
图13为本发明的液晶显示面板的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种阵列基板的制作方法，包括如下步骤：
步骤1、如图3所示，提供一第一衬底基板10，在所述第一衬底基板10上沉积栅极金属层，并对所述栅极金属层进行图案化处理，得到栅极20。
具体的，所述步骤1中通过物理气相沉积法沉积栅极金属层，所沉积的栅极金属层的膜厚为所述栅极金属层的材料为钼、钛、铝、铜中的一种或多种的堆栈组合；具体的，通过掩模板进行曝光、显影，并进行湿刻和剥离完成所述栅极金属层的图案化处理。
步骤2、如图4所示，在所述栅极20、及第一衬底基板10上沉积栅极绝缘层30，在所述栅极绝缘层30上沉积一层非晶硅层40’。
具体的，所述步骤2中通过化学气相沉积法沉积栅极绝缘层30和非晶硅层40’，所沉积的栅极绝缘层30的膜厚为所沉积的非晶硅层40’的膜厚为优选的，所述栅极绝缘层31为氮化硅层。
步骤3、如图5-6所示，在所述非晶硅层40’上涂布一层光刻胶膜，提供灰阶掩模板90，对该层光刻胶膜进行曝光显影，得到位于所述非晶硅层40’上的对应所述栅极20上方的光阻层50，所述光阻层50包括位于中间的第一光阻层50、及厚度小于第一光阻层51且位于第一光阻层51两侧的第二光阻层52；
特别的，所述光刻胶膜的材料为具有吸光特性的正性光刻胶。
具体的，所述步骤3中，所述光刻胶膜的膜厚为1.8～3.0μm，则所述灰阶掩模板90上对应于所述第一光阻层的第一部分91为不透光，对应于第二光阻层的第二部分92为半透光，其余部分为完全透光。
步骤4、如图7所示，以所述光阻层50为遮蔽层，对所述非晶硅层40’进行蚀刻，得到半导体层40。
具体的，所述步骤4中，对所述光阻层50进行烧光阻后，所得到的遮光层501的厚度为0.7～1.7μm。
步骤5、如图8所示，对所述光阻层50进行烧光阻，其中第二光阻层52被完全去除掉，第一光阻层51的厚度减少，得到遮光层501，所得到遮光层501的尺寸小于所述半导体层40的尺寸。
步骤6、如图9所示，以遮光层501作为遮蔽层对所述半导体层40的两端进行磷离子注入，得到位于所述半导体层40两端的欧姆接触区41、及位于中间的未经过离子注入的沟道区42；
步骤7、如图10所示，在所述遮光层501、半导体层40、及栅极绝缘层30上沉积源漏极金属层，并对所述源漏极金属层进行图案化处理，得到源极61和漏极62，所述源极61和漏极62分别与所述半导体层40两端的欧姆接触区41相接触；
具体的，所述步骤7中，通过物理气相沉积法沉积源漏极金属层，所沉积的源漏极金属层的膜厚为所述源漏极金属层的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。具体的，通过掩模板进行曝光、显影，并进行湿刻和剥离完成所述源漏极金属层的图案化处理。
步骤8、如图11所示，在所述源极61、漏极62、遮光层501、及栅极绝缘层30上沉积绝缘保护层70，并对绝缘保护层70进行图案化处理，得到位于所述漏极62上方的贯穿绝缘保护层70的过孔71。
具体的，所述步骤8中通过化学气相沉积法沉积绝缘保护层，所沉积的绝缘保护层70为膜厚为的；优选的，所述的绝缘保护层70为氮化硅层。具体的，通过掩模板进行曝光、显影，并进行干刻和剥离完成所述绝缘保护层70的图案化处理。
步骤9、如图12所示，在所述绝缘保护层70上沉积一层透明导电层，并对所述透明导电层进行图案化处理，得到像素电极80，所述像素电极80通过过孔71与漏极62相接触。
具体的，所述步骤9中通过物理气相沉积法沉积透明导电层，所沉积透明导电层的膜厚为所述透明导电层的材料为铟锡氧化物、铟锌氧化物、铝锡氧化物、铝锌氧化物、铟锗锌氧化物中的一种或多种。具体的，通过掩模板进行曝光、显影，并进行湿刻和剥离完成所述透明导电层的图案化处理。
请参阅图13，基于以上阵列基板的制作方法，本发明还提供一种液晶显示面板，包括：阵列基板1、彩膜基板2以及位于阵列基板1与彩膜基板2之间的液晶层3；
所述陈列基板1包括：第一衬底基板10、设于所述第一衬底基板10上的数条栅极扫描线、数条数据线、以及由数条栅极扫描线与数条数据线相互绝缘交错划分出的多个阵列排布的像素单元；
所述彩膜基板2包括：第二衬底基板25、设于所述彩膜基板2靠近阵列基板1一侧表面的彩色滤光层21、设于所述彩色滤光层21上的公共电极层22、及设于所述公共电极层22上的间隔物层23；
所述阵列基板1上的每一像素单元包括：形成于所述第一衬底基板10上的栅极20、形成于所述栅极20及第一衬底基板10上栅极绝缘层30、对应所述栅极20上方且形成于所述栅极绝缘层30上的半导体层40、位于所述半导体层40上的遮光层501、形成于所述遮光层501、半导体层40、及栅极绝缘层30上的源极61和漏极62、形成于所述源极61、漏极62、遮光层501、及栅极绝缘层30上绝缘保护层70、及形成于所述绝缘保护层70上的像素电极80；
所述遮光层501同时具备蚀刻阻挡和遮光的作用，尺寸小于所述半导体层40的尺寸，材料为具有吸光特性的正性光刻胶。
具体的，所述半导体层40通过以光阻层为遮蔽层，对非晶硅层进行蚀刻得到，所述遮光层501由该光阻层通过烧光阻得到。
具体的，所述遮光层501的厚度为0.7～1.7μm。
具体的，所述半导体层40包括位于中间的沟道区42及位于两端的欧姆接触区41，所述遮光层501完全覆盖所述沟道区42，所述欧姆接触区41通过以所述遮光层501为遮蔽层，对所述半导体层40的两端进行磷离子注入得到，所述源极61和漏极62分别与所述半导体层40两端的欧姆接触区41相接触。
具体的，所述绝缘保护层70对应所述漏极62上方设有通孔71，所述像素电极80通过通孔71与所述漏极62相接触。
综上所述，本发明提供的一种阵列基板的制作方法，半导体层上设置有遮光层，该遮光层为一种具有吸光特性的正性光刻胶，该遮光层采用与蚀刻形成半导体层所用的光阻层为同层设计，在半导体层完成蚀刻后，通过对光阻层进行烧光阻得到该尺寸小于半导体层的遮光层，以遮挡光线对半导体层的照射，降低漏电流，然后通过磷离子注入形成半导体层两端的欧姆接触层，该制作方法简单易行，效果良好；本发明的液晶显示面板，半导体层上设有遮光层，该遮光层同时具备蚀刻阻挡和遮光的作用，能够取代现有技术中彩膜基板上的黑色矩阵，遮挡光线对半导体层的照射，降低漏电流，简化面板结构，提升开口率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种阵列基板的制作方法，其特征在于，包括如下步骤：
步骤1、提供一第一衬底基板(10)，在所述第一衬底基板(10)上沉积栅极金属层，并对所述栅极金属层进行图案化处理，得到栅极(20)；
步骤2、在所述栅极(20)、及第一衬底基板(10)上沉积栅极绝缘层(30)，在所述栅极绝缘层(30)上沉积一层非晶硅层(40’)；
步骤3、在所述非晶硅层(40’)上涂布一层光刻胶膜，提供灰阶掩模板(90)，对该层光刻胶膜进行曝光和显影，得到光阻层(50)，所述光阻层(50)包括位于中间的第一光阻层(50)、及厚度小于第一光阻层(51)且位于第一光阻层(51)两侧的第二光阻层(52)；
所述光刻胶膜的材料为具有吸光特性的正性光刻胶；
步骤4、以所述光阻层(50)为遮蔽层，对所述非晶硅层(40’)进行蚀刻，得到半导体层(40)；
步骤5、对所述光阻层(50)进行烧光阻，其中第二光阻层(52)被完全去除掉，第一光阻层(51)的厚度减少，得到遮光层(501)，所得到遮光层(501)的尺寸小于所述半导体层(40)的尺寸；
步骤6、以遮光层(501)作为遮蔽层对所述半导体层(40)的两端进行磷离子注入，得到位于所述半导体层(40)两端的欧姆接触区(41)、及位于中间的未经过离子注入的沟道区(42)；
步骤7、在所述遮光层(501)、半导体层(40)、及栅极绝缘层(30)上沉积源漏极金属层，并对所述源漏极金属层进行图案化处理，得到源极(61)和漏极(62)，所述源极(61)和漏极(62)分别与所述半导体层(40)两端的欧姆接触区(41)相接触；
步骤8、在所述源极(61)、漏极(62)、遮光层(501)、及栅极绝缘层(30)上沉积绝缘保护层(70)，并对绝缘保护层(70)进行图案化处理，得到位于所述漏极(62)上方的贯穿绝缘保护层(70)的过孔(71)；
步骤9、在所述绝缘保护层(70)上沉积一层透明导电层，并对所述透明导电层进行图案化处理，得到像素电极(80)，所述像素电极(80)通过过孔(71)与漏极(62)相接触。
2.如权利要求1所述的阵列基板的制作方法，其特征在于，所述步骤3中，所述光刻胶膜的膜厚为1.8～3.0μm；所述步骤4中，对所述光阻层(50)进行烧光阻后，所得到的遮光层(501)的厚度为0.7～1.7μm。
3.如权利要求1所述的阵列基板的制作方法，其特征在于，所述步骤1中通过物理气相沉积法沉积栅极金属层，所沉积的栅极金属层的膜厚为所述栅极金属层的材料为钼、钛、铝、铜中的一种或多种的堆栈组合；所述步骤7中，通过物理气相沉积法沉积源漏极金属层，所沉积的源漏极金属层的膜厚为所述源漏极金属层的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
4.如权利要求1所述的阵列基板的制作方法，其特征在于，所述步骤2中，通过化学气相沉积法沉积栅极绝缘层(30)和非晶硅层(40’)，所沉积的栅极绝缘层(30)的膜厚为所沉积的非晶硅层(40’)的膜厚为所述栅极绝缘层(31)为氮化硅层；所述步骤8中，通过化学气相沉积法沉积绝缘保护层(70)，所沉积的绝缘保护层(70)为膜厚为的，所述的绝缘保护层(70)为氮化硅层。
5.如权利要求1所述的阵列基板的制作方法，其特征在于，所述步骤9中，通过物理气相沉积法沉积透明导电层，所沉积透明导电层的膜厚为所述透明导电层的材料为铟锡氧化物、铟锌氧化物、铝锡氧化物、铝锌氧化物、铟锗锌氧化物中的一种或多种。
6.一种液晶显示面板，其特征在于，包括：阵列基板(1)、与所述阵列基板(1)相对设置的彩膜基板(2)、以及夹设于所述阵列基板(1)与彩膜基板(2)之间的液晶层(3)；
所述阵列基板(1)包括：第一衬底基板(10)、设于所述第一衬底基板(10)上的数条栅极扫描线、数条数据线、以及由数条栅极扫描线与数条数据线相互绝缘交错划分出的多个阵列排布的像素单元；
所述彩膜基板(2)包括：第二衬底基板(25)、设于所述彩膜基板(2)靠近阵列基板(1)一侧表面的彩色滤光层(21)、设于所述彩色滤光层(21)上的公共电极层(22)、及设于所述公共电极层(22)上的间隔物层(23)；
所述阵列基板(1)上的每一像素单元均包括：形成于所述第一衬底基板(10)上的栅极(20)、形成于所述栅极(20)及第一衬底基板(10)上栅极绝缘层(30)、形成于所述栅极绝缘层(30)上的半导体层(40)、位于所述半导体层(40)上的遮光层(501)、形成于所述遮光层(501)、半导体层(40)、及栅极绝缘层(30)上的源极(61)和漏极(62)、形成于所述源极(61)、漏极(62)、遮光层(501)、及栅极绝缘层(30)上绝缘保护层(70)、及形成于所述绝缘保护层(70)上的像素电极(80)；
所述遮光层(501)同时具备蚀刻阻挡和遮光的作用，尺寸小于所述半导体层(40)的尺寸，材料为具有吸光特性的正性光刻胶。
7.如权利要求6所述的液晶显示面板，其特征在于，所述遮光层(501)的厚度为0.7～1.7μm。
8.如权利要求6所述的液晶显示面板，其特征在于，所述半导体层(40)包括位于中间的沟道区(42)及位于两端的欧姆接触区(41)，所述遮光层(501)完全覆盖所述沟道区(42)，所述欧姆接触区(41)通过以所述遮光层(501)为遮蔽层，对所述半导体层(40)的两端进行磷离子注入得到，所述源极(61)和漏极(62)分别与所述半导体层(40)两端的欧姆接触区(41)相接触。
9.如权利要求6所述的液晶显示面板，其特征在于，所述绝缘保护层(70)对应所述漏极(62)上方设有贯穿所述绝缘保护层(70)的通孔(71)，所述像素电极(80)通过通孔(71)与所述漏极(62)相接触。
10.如权利要求6所述的液晶显示面板，其特征在于，所述半导体层(40)通过以设于非晶硅层上的光阻层为遮蔽层，对非晶硅层进行蚀刻得到，所述遮光层(501)由该光阻层通过烧光阻得到。
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