CN106410607B - Active optical phased array photon integrated chip and preparation method thereof - Google Patents
Active optical phased array photon integrated chip and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06233—Controlling other output parameters than intensity or frequency
- H01S5/06246—Controlling other output parameters than intensity or frequency controlling the phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
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- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a kind of active optical phased array photon integrated chips and preparation method thereof, wherein, chip includes: coherent laser array, with the MS master-slave laser realized by same material and technique, by unidirectionally inject lock mode make it is multiple from laser it is each between laser with the good coherence of identical frequency and stationary phase；Optical phase modulator array, to control in multiple optical phase modulators each optical phase modulator to the phase delay of light by electric signal modulation system；Transition waceguide array and light field radiating curtain, wave beam and transmitting position are carried out for adjusting different coherent beams issuing from laser, postponing by different optical phase modulators with different light phases, to determine coherent superposition beam exit direction according to the difference of phase delay.The integrated chip can integrate in the same substrate, and the general power of output light is formed by each from laser coherent superposition, have integrated chip and the high advantage of emergent power concurrently.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of active optical phased array photon integrated chip and its preparation
Method.
Background technique
The relevant technologies, laser radar is using laser rather than radio wave is as emission source, and opposite conventional radar has volume
Advantage small, detection accuracy is high.From initial simple ranging, three-dimensional imaging till now, laser radar is in various military affairs
Space is had a wide range of applications with civilian occasion.
It is limited to the quantity of laser integrated, to obtain high-resolution dimensional radar image, laser radar needs
After the laser plus scanning means.Existing commercial lasers radar changes the side in laser beam direction using mechanical scanner
Formula haves the shortcomings that scanning and image taking speed is slow, weight and volume is big.If can be controlled by the way of non-mechanical scanning sharp
The exit direction of light light beam may then greatly improve scanning and image taking speed, and the volume and weight of laser radar is effectively reduced.
Phased array of microwaves radar, adjusted by way of electricity it is with identical tranmitting frequency, launch from different antennae
The phase of the electromagnetic wave come realizes the control to electromagnetic wave exit direction by way of relevant.If by the method for phased array
It is applied to optical field, i.e., adjusts the phase with phase co-wavelength, the laser beam emitted from different waveguide by electrical method
Position, and these laser beams are closed into Shu Xianggan, it is likely that it realizes the High-speed Control to laser emitting direction, is the weight of laser radar
Want developing direction.
However, being difficult to realize identical wavelength and fixed phase difference between various lasers, therefore existing phased array
Laser radar generallys use the mode of inactive phased array, i.e., provides outgoing beam by single laser, beam splitting enters different nothings
Then source waveguide is concerned with by light modulator modulates phase, finally from the radiation of each transmitting unit.Currently, this passive light is phased
Battle array laser array research can realize, however due to the output power of single laser be limited, by beam splitting, modulation, passive wave
The various losses for leading absorption greatly limit the outgoing optical power of the laser of inactive phased array, swash so as to cause inactive phased array
Optical radar detection range is short, detectivity is low.If can be coordinated by certain mode wavelength between multiple lasers and
Phase, so that it may the general power of chip output light is superimposed out by each laser in array, outgoing optical power is mentioned significantly
It is high.For example locking is injected from laser using main laser, make from laser with main laser same laser frequency and admittedly
Fixed phase, if can realize stable injection lock from laser with multiple simultaneously using the main laser of a high quality
It is fixed, that is, it can reach respectively from laser phase-locking, the identical coherent laser array of frequency.
However though it is proposed that this idea for realizing coherent laser array, has not seen that one is swashed so far
Light device locks the Experimental report or product of multiple laser output phases simultaneously.Here basic problem is really to be engaged in too drastic
The people of light device injection locking research is aware that and realizes that laser injection locking is not in addition the laser of a careless laser enters
One laser is it is achieved that necessarily require from the very close main laser of free working frequency of the laser before locked
Working frequency is likely to find the possibility of locking, and injected optical power is lower is more difficult to realize injection locking.
Therefore, mono- main laser of Yao Shixian realizes stable injection locking, real skill from laser with multiple simultaneously
Art problem is that multiple free working frequency needs before laser and main laser locking sufficiently close to, that is, has good
Consistency trend.Simultaneously with the variation of laser power, it is also necessary to which each master and slave laser realizes a certain range state (such as
Operating current or temperature) adjusting be just able to achieve or keep stable injection to lock.
Summary of the invention
The present invention is directed to solve at least some of the technical problems in related technologies.
For this purpose, an object of the present invention is to provide a kind of active optical phased array photon integrated chip, which can be with
Have integrated chip and the high advantage of emergent power concurrently, it is simple easily to realize.
It is another object of the present invention to the preparation methods for proposing a kind of active optical phased array photon integrated chip.
In order to achieve the above objectives, the embodiment of the present invention proposes a kind of active optical phased array photon integrated chip, comprising: phase
Dry laser array, the coherent laser array has main laser, optoisolator and multiple from laser, by same
Material and technique realize MS master-slave laser, by unidirectionally inject lock mode make it is the multiple from laser it is each from laser
With the good coherence of identical frequency and stationary phase between device；Optical phase modulator array, optical phase modulator array tool
There are multiple optical phase modulators, to control each light phase tune in the multiple optical phase modulator by electric signal modulation system
Phase delay of the device processed to light；Transition waceguide array and light field radiating curtain, for adjusting different issue from laser, processes
Different optical phase modulators and with different light phases delay coherent beam carry out wave beam and transmitting position, to be prolonged according to phase
Slow difference determines coherent superposition beam exit direction.
The active optical phased array photon integrated chip of the embodiment of the present invention, main laser, respectively from laser be based on same
Substrate, same epitaxial material, same frequency (or wavelength) control structure, having on this basis can quick, fine tuning frequency control
Structure processed ensures that each free working frequency of laser is close by the consistency of material, structure and hand work, and passes through fine tuning
Structure further strengthens frequency control ability, takes the lead in realizing that a main laser stablizes note from laser to multiple in the world
Enter locking, so that the general power of output light is formed by each from laser coherent superposition by being integrated in the same substrate, it is real
Now have the purpose of integrated chip and the high advantage of emergent power concurrently.
In addition, active optical phased array photon integrated chip according to the above embodiment of the present invention can also have following add
Technical characteristic:
Further, in one embodiment of the invention, the main laser and multiple use from laser are distributed instead
Present semiconductor laser, wherein the grating of the main laser and multiple distributed feedback semiconductor lasers from laser contains
Have gain profiles cyclically-varying or the main laser and it is multiple from laser using distributed Blatt reflective semiconductor
Laser.
Further, in one embodiment of the invention, the main laser and the multiple wave from laser
Length selects structure for surface grating.
Further, in one embodiment of the invention, the main laser and multiple having the same from laser
Semiconductor extension structure, optical waveguide structure and wavelength selection structure.
Further, in one embodiment of the invention, the coherent laser array has optical isolation coupled zone,
In, the forbidden bandwidth of the optical isolation coupled zone, optical phase modulator and transition waceguide is greater than the main laser and from laser
Device so that the optical isolation coupled zone, the optical phase modulator and the transition waceguide to the main laser and it is described from
The light that laser issues does not absorb.
Further, in one embodiment of the invention, the optical isolation coupled zone, the transition waceguide, the master
Laser and the multiple from laser semiconductor extension structure having the same, the optical isolation coupled zone and the little bellow
Injection Current is led, the electric current is not less than transparent electric current.
Optionally, in one embodiment of the invention, the main laser and the epitaxial layer from laser use InP-base
Semiconductor material or GaAs, GaP base semiconductor material.
Further, in one embodiment of the invention, the spacing of the light field radiating curtain is not more than optical maser wavelength
Half, wherein the light field radiating curtain be inclined etching mirror array or even-order grating array or
Light field radiating curtain containing nanometer metal structure.
Further, in one embodiment of the invention, the coherent laser array, the optical phase modulator battle array
Column, the transition waceguide array and light field radiating curtain make on the same substrate, to be integrated on the same base.
In order to achieve the above objectives, another aspect of the present invention embodiment proposes a kind of above-mentioned active optical phased array integreted phontonics
The preparation method of chip, comprising the following steps: the active material structure of epitaxial laser in highly doped n-type semiconductor substrate,
Including ducting layer, N-shaped grating layer in N-shaped under-clad layer, undoped lower waveguide layer, undoped quantum well structure, p-type；In main laser
Device and the optical grating construction that identical screen periods are made from laser area part, etching depth includes on N-shaped grating layer and part of p-type
Ducting layer, grating Bragg wavelength are greater than Quantum Well energy bandgap wavelength 40-60nm, and rest part etches comprehensively, and etching depth includes n
Ducting layer on type grating layer material and part of p-type；Secondary epitaxy material, including p-type top covering, heavily-doped p-type Ohmic contact half
Conductor material；The main laser and the shallow ridge waveguide structure that same widths, depth are respectively etched from laser, etching depth include
P-type ohmic contact layer, p-type top covering, the main laser and couple plot structure from optical isolation is etched between laser, and etching is deep
Degree includes ducting layer, undoped quantum well structure, undoped lower waveguide layer and portion in p-type ohmic contact layer, p-type top covering, p-type
Divide N-shaped under-clad layer；Electrode insulation film is made, exposes the main laser and described respectively from laser ridge waveguide top；Make p
Type electrode structure makes film resistor and metal electrode in main laser ridge waveguide side；N-type substrate is thinned to 70~130 μm
It is thick；N-shaped public electrode is made in substrate back；Cleavage chip strip, cleavage position is in the main laser and described from laser
Endface position；In the main laser and described from two end face coating anti reflection optical films of laser, reflectivity is less than 1%.
The preparation method of the active optical phased array photon integrated chip of the embodiment of the present invention, by main laser, respectively from laser
Device is based on same substrate, same epitaxial material, same frequency (or wavelength) control structure, and having on this basis can be quick, micro-
The frequency control structure of tune ensures that each free working frequency of laser is close by the consistency of material, structure and hand work,
And frequency control ability is further strengthened by fine tuning structure, it takes the lead in realizing a main laser to multiple from laser in the world
Device stablizes injection locking, so that the general power of output light is concerned with by each from laser by being integrated in the same substrate
It is formed by stacking, realizes the purpose for having integrated chip and the high advantage of emergent power concurrently.
The additional aspect of the present invention and advantage will be set forth in part in the description, and will partially become from the following description
Obviously, or practice through the invention is recognized.
Detailed description of the invention
Above-mentioned and/or additional aspect and advantage of the invention will become from the following description of the accompanying drawings of embodiments
Obviously and it is readily appreciated that, in which:
Fig. 1 is the structural schematic diagram according to the active optical phased array photon integrated chip of one embodiment of the invention；
Fig. 2 is the process according to the preparation method of the active optical phased array photon integrated chip of one embodiment of the invention
Figure.
Description of symbols:
The active optical phased array photon integrated chip of 100-, 10- main laser, 20- optical isolation coupled zone, 30- are from laser
Array, 40- optical phase modulator array, 50- transition waceguide array, 60- light field radiating curtain, 70- positive electrode, 80- substrate,
90- back electrode.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to is used to explain the present invention, and is not considered as limiting the invention.
The active optical phased array photon integrated chip proposed according to embodiments of the present invention and its system are described with reference to the accompanying drawings
Preparation Method describes the active optical phased array photon integrated chip proposed according to embodiments of the present invention with reference to the accompanying drawings first.
Fig. 1 is the structural schematic diagram of the active optical phased array photon integrated chip of one embodiment of the invention.
As shown in Figure 1, the active optical phased array photon integrated chip 100 includes: coherent laser array, light phase modulation
Device array 40, transition waceguide array 50 and light field radiating curtain 60.
Wherein, coherent laser array has main laser 10, optoisolator and multiple from laser, to pass through same material
Material and technique realize MS master-slave laser, by unidirectionally inject lock mode make it is multiple from each between laser in laser
Good coherence with identical frequency and stationary phase.Optical phase modulator array 40 has multiple optical phase modulators, with
Each optical phase modulator is controlled in multiple optical phase modulators to the phase delay of light by electric signal modulation system.Little bellow
Lead array 50 and light field radiating curtain 60 be used to adjust it is different it is being issued from laser, have by different optical phase modulators
The coherent beam of different light phase delays carries out wave beam and transmitting position, to determine coherent superposition light according to the difference of phase delay
Beam-emergence direction.The integrated chip 100 of the embodiment of the present invention can integrate in the same substrate, and the general power of output light is by each
It is a to be formed from laser coherent superposition, have integrated chip and the high advantage of emergent power concurrently.
Specifically, the chip of coherent laser array include a main laser 10, it is multiple from laser and between
Optical isolation coupled zone 20, main laser 10 are respectively realized from laser using same material and technique, and at least main laser 10
With fine tuning operating temperature or current regulation laser frequency structure, in such a way that MS master-slave laser unidirectionally injects locking come
Control makes each good coherence with identical frequency and stationary phase between laser from laser array 30；Light
Phase modulator array 40 controls each modulator to the phase delay of light by the way of electric signal modulation；Transition waceguide battle array
Column 50 and light field radiating curtain 60 are issuing difference from laser, have and do not share the same light phase by different optical phase modulators
The coherent beam of position delay carries out wave beam and emits the adjustment of position, and the beam exit direction of final coherent superposition is by above-mentioned phase
The case where difference of delay, determines.
Further, in one embodiment of the invention, main laser 10 and it is multiple from laser use distributed feed-back
Semiconductor laser, wherein the grating of main laser 10 and multiple distributed feedback semiconductor lasers from laser contains increasing
Benefit distribution cyclically-varying or main laser 10 and it is multiple from laser use distributed Blatt reflective semiconductor laser
Device.
That is, in coherent laser array, main laser 10 and DFB is used from laser array 30
(Distributed Feedback Laser, distributed feedback laser) semiconductor laser, periodical Jie is contained in gain region
The grating of the grating of electric constant variation, main laser 10 and the Distributed Feedback Laser from laser array 30 contains the week of gain profiles
The variation of phase property, i.e. gain coupled mode grating, grating Bragg wavelength and laser frequency have good correspondence, facilitate
It improves frequency invariance or main laser 10 between each laser and uses DBR from laser array 30
(Distributed Bragg Reflector, distributed Bragg reflection laser) semiconductor laser, grating Bragg wave
It is long that there is good correspondence with laser frequency, help to improve the frequency invariance between each laser.
Further, in one embodiment of the invention, main laser 10 and multiple wavelength selection knots from laser
Structure is surface grating.
In other words, main laser 10 and can from the wavelength selection structure of laser array 30 in the chip of coherent laser array
Think surface grating.Further, main laser 10 and the wavelength selection structure from laser array 30 can be positioned at laser
The side-coupled surface grating of device waveguide upper limiting layer two sides.
Further, in one embodiment of the invention, main laser 10 and multiple from laser having the same half
Conductor epitaxial structure, optical waveguide structure and wavelength selection structure.
Further, in one embodiment of the invention, coherent laser array has optical isolation coupled zone 20,
In, the forbidden bandwidth of optical isolation coupled zone 20, optical phase modulator and transition waceguide is greater than main laser 10 and from laser, with
Inhale optical isolation coupled zone 20, optical phase modulator and transition waceguide not to main laser 10 and from the light that laser issues
It receives.
Further, in one embodiment of the invention, optical isolation coupled zone 20, transition waceguide, 10 and of main laser
It is multiple from laser semiconductor extension structure having the same, optical isolation coupled zone 20 and transition waceguide Injection Current, electric current is not
Less than transparent electric current.
It is understood that the forbidden bandwidth of optical phase modulator and transition waceguide is greater than main laser 10 and from laser
Device, i.e. optical phase modulator and transition waceguide do not absorb substantially to main laser 10 and from the light that laser issues.Alternatively, mistake
Cross in the chip of waveguide array 50, coherent laser array main laser 10 and from the semiconductor having the same of laser array 30
Epitaxial structure, optical isolation coupled zone 20 and transition waceguide Injection Current, Injection Current are not less than transparent carrier current.
Optionally, in one embodiment of the invention, main laser 10 and the epitaxial layer from laser are using InP-base half
Conductor material or GaAs, GaP base semiconductor material.
For example, the epitaxial layer of the chip of coherent laser array can use InP-base semiconductor material, such as
InGaAsP, AlGaInAs, operating wavelength range are 1.3 μm~2.0 μm, can also use GaAs, GaP base semiconductor material, such as
GaAlAs, AlGaInP, operating wavelength range are 0.6 μm~1.1 μm, are not specifically limited herein.
Further, in one embodiment of the invention, the spacing of light field radiating curtain 60 is no more than optical maser wavelength
Half, wherein light field radiating curtain 60 is inclined etching mirror array or even-order grating array or contains
The light field radiating curtain 60 of nanometer metal structure.
Further, in one embodiment of the invention, coherent laser array, optical phase modulator array 40, mistake
It crosses waveguide array 50 and light field radiating curtain 60 to make on the same substrate 80, to be integrated on the same base, realizes phase
The integreted phontonics of dry laser array, optical phase modulator array 40 and light field radiating curtain 60 realize high-power output, big angle
Spend the New Active optical phased array photon integrated chip 100 of covering.
It is carried out in detail with active optical phased array photon integrated chip 100 of multiple specific embodiments to the embodiment of the present invention below
Thin description.
Embodiment 1:
The active optical phased array photon integrated chip 100 for being 1.3 μm~2.0 μm for operating wavelength range, can be based on
With a piece of InP substrate 80.The either highly doped n-InP of substrate 80, back electrode 90 are located at the back side of substrate 80；Either half absolutely
Edge InP, back electrode 90 are located at the front of substrate 80.
Main laser 10 and the semiconductor extension structure from laser array 30, waveguiding structure and wavelength selection structure phase
Together.Semiconductor extension structure uses p-i-n structure, and InP or AlInAs can be used in p, n-layer, and thickness range is 1~2 μm, and i layers can
Using the multi-quantum pit structure of the ternarys such as InGaAs, InGaAsP, AlGaInAs or quaternary alloy Group III-V compound semiconductor,
Corresponding luminous spectral peak range is 1.2 μm~2.0 μm, and thickness range is 0.05~0.5 μm.
Wavelength or the frequency selection of laser are realized with the grating of distributed feed-back (DFB) or distribution bragg grating (DBR).Wave
Long selection structure, the index-coupled mechanism not only with refractive index periodic distribution, but also with gain period distribution
Gain coupling mechanism.Grating can be the built-in grating close to active layer, such main laser 10 and need from laser array 30
Want secondary epitaxy；It is also possible to extend to the surface grating near active layer from epi-layer surface, only needs an extension.Grating spreads out
Penetrating series can be 1~5 grade.
Waveguiding structure can be buried heterostructure (BH) structure, be also possible to ridge waveguide structure.Waveguide upper and lower limit preparative layer can
Using InP or AlInAs, thickness range is 1~2 μm.The ternarys such as InGaAs, InGaAsP, AlGaInAs or four can be used in core area
The multi-quantum pit structure of first alloy Group III-V compound semiconductor, thickness range are 0.1~0.5 μm, and width range is 1~3 μ
m.Wherein the simplest wavelength selection structure of manufacture craft is located at the side-coupled surface light of laser waveguide upper limiting layer two sides
Grid pass through InP-base semiconductor upper limiting layer (such as p-InP, p-AlInAs) and filling dielectric (such as SiNx、SiO2, polyamides
Imines etc.) from ridge waveguide two sides light field periodic disturbance is given, and the mean refractive index in side-coupled surface grating region is lower than
InP-base semiconductor upper limiting layer, to realize the transverse mode limitation of ridge waveguide simultaneously.By adjusting the period of grating, make winner
Laser 10 and specified wavelength lasing from laser at 1.3 μm~2.0 μm.
Optical isolation coupled zone 20, optical phase modulator array 40, transition waceguide array 50, light field radiating curtain 60 are partly led
Body epitaxial layer can also use the ternary or quaternary alloy Group III-V compound semiconductor of InP-base, but component and main laser
Device 10 slightly has difference from laser, and the forbidden bandwidth of active layer is greater than main laser 10 and from laser, so that optical isolation
Coupled zone 20, optical phase modulator array 40, transition waceguide array 50, light field radiating curtain 60 do not absorb laser substantially.
It can be by the material of selective area epitaxial, in medium (such as SiO with different gap and width2、SiNx) extension is carried out on mask,
The speed of growth and material component of epitaxial material will appear certain difference, so that optical isolation coupled zone 20, light phase tune
Device array 40 processed, transition waceguide array 50, light field radiating curtain 60 have bigger forbidden bandwidth than laser.It can also allow institute
Some devices semiconductor extension structure all having the same, then in optical isolation coupled zone 20, optical phase modulator array 40, mistake
Cross waveguide array 50, the injection of light field radiating curtain 60 is not less than the electric current of transparent carrier.
The waveguiding structure of optical phase modulator and essentially identical from laser, show waveguide core region width and thickness with from
Laser is identical.Voltage modulated mode can be used in optical phase modulator, by change driving voltage adjust modulator waveguide etc.
Imitate refractive index.Current regulation mode can also be used, the equivalent refractive index of modulator waveguide is adjusted by changing Injection Current.
Transition waceguide array 50, one end connection unit number are the optical phase modulator of 1 × L, and the other end leads to unit
Number is the two-dimension light field radiating element of M × N, wherein L=M × N, real by the core sector width and thickness that gradually change transition waceguide
The adjustment of existing field distribution.Connect the core area of the transition waceguide of optical phase modulator one end, width and thickness and light phase
The core sector width of position modulator is identical with thickness, and the core area section by the transition waceguide of one end of light field radiating element is side
Shape, width and thickness range is 0.1~0.5 μm, to realize circular field distribution.
Light field radiating curtain 60, one is the inclined end face etched in 50 output end of transition waceguide array, end face and substrate
The typical angle on 80 surfaces is 45 °, realizes that each light beam becomes vertically to serve as a contrast from parallel 80 direction of substrate by the total internal reflection of end face
80 direction of bottom；Another kind is grating after 50 output end of transition waceguide array, that diffraction progression is even level, passes through grating
Diffraction realize that each light beam becomes 80 direction of vertical substrates from parallel 80 direction of substrate.
Embodiment 2:
The active optical phased array photon integrated chip 100 for being 0.6 μm~1.1 μm for operating wavelength range, can be based on
With a piece of GaAs or GaP substrate 80.Substrate 80 either highly doped substrate, back electrode 90 are located at the back side of substrate 80；Either
Semi-insulating substrate, back electrode 90 are located at the front of substrate 80.
Main laser 10 and the semiconductor extension structure from laser array 30, waveguiding structure and wavelength selection structure phase
Together, semiconductor extension structure uses p-i-n structure, and GaAlAs or GaInP can be used in the area p, n, and thickness range is 0.2~2 μm, i
The ternarys such as GaAlAs, AlGaInP or quaternary alloy Group III-V compound semiconductor, corresponding luminous spectral peak range can be used in area
It is 0.6 μm~1.1 μm, 0.05~0.5 μm of thickness range.
Wavelength or the frequency selection of laser are realized with the grating of distributed feed-back (DFB) or distribution bragg grating (DBR).Wave
Long selection structure, the index-coupled mechanism not only with refractive index periodic distribution, but also with gain period distribution
Gain coupling mechanism.Grating can be the built-in grating close to active layer, by being repeatedly epitaxially formed；It is also possible to from epitaxial layer
Surface extends to the surface grating near active layer, only needs an extension.Optical grating diffraction series can be 1~5 grade.
Waveguiding structure can be buried heterostructure (BH) structure, be also possible to ridge waveguide structure.Waveguide upper and lower limit preparative layer can
Using GaAlAs or GaInP, thickness range is 0.2~2 μm.Wherein the simplest wavelength selection structure of manufacture craft is located at laser
The side-coupled surface grating of device waveguide upper limiting layer two sides passes through GaAs or GaP base semiconductor upper limiting layer (such as p-
GaAlAs, p-GaInP etc.) and filling dielectric (such as SiNx、SiO2, polyimides etc.) from ridge waveguide two sides give light field week
The disturbance of phase property, and the mean refractive index in side-coupled surface grating region is lower than GaAs or GaP base semiconductor upper limiting layer, thus
The transverse mode limitation of ridge waveguide is realized simultaneously.By adjust grating period so that main laser 10 and from laser at 0.6 μm
~1.1 μm of specified wavelength lasing.
Optical isolation coupled zone 20, optical phase modulator, transition waceguide, light field radiating curtain 60 semiconductor epitaxial layers,
The ternary or quaternary alloy Group III-V compound semiconductor of GaAs or GaP base can be used, but usually component slightly has difference,
The forbidden bandwidth of its active layer is greater than main laser 10 and from laser so that optical isolation coupled zone 20, optical phase modulator,
Transition waceguide, light field radiating curtain 60 do not absorb laser substantially.It can be by way of selective area epitaxial, between there is difference
Medium (such as SiO of gap and width2、SiNx) extension is carried out on mask, the speed of growth and material component of epitaxial material will appear one
Fixed difference, so that laser is compared in optical isolation coupled zone 20, optical phase modulator, transition waceguide, light field radiating curtain 60
With bigger forbidden bandwidth.All devices semiconductor extension structure all having the same can also be allowed, then in optical isolation
Coupled zone 20, optical phase modulator array 40, transition waceguide array 50, the injection of light field radiating curtain 60 are not less than transparent carrier
Electric current.
Voltage modulated mode can be used in optical phase modulator, and the equivalent folding of modulator waveguide is adjusted by changing driving voltage
Penetrate rate.Current regulation mode can also be used, the equivalent refractive index of modulator waveguide is adjusted by changing Injection Current.
Transition waceguide array 50, one end connection unit number are the optical phase modulator of 1 × L, and the other end leads to unit
Number is the two-dimension light field radiating element of M × N, wherein L=M × N, real by the core sector width and thickness that gradually change transition waceguide
The adjustment of existing field distribution.Connect the core area of the transition waceguide of optical phase modulator one end, width and thickness and light phase
The core sector width of position modulator is identical with thickness, and the core area section by the transition waceguide of one end of light field radiating element is side
Shape, width and thickness range is 0.1~0.5 μm, to realize circular field distribution.
Light field radiating curtain 60, one is the inclined end face etched in 50 output end of transition waceguide array, end face and substrate
The typical angle on 80 surfaces is 45 °, realizes that each light beam becomes vertically to serve as a contrast from parallel 80 direction of substrate by the total internal reflection of end face
80 direction of bottom；Another kind is grating after 50 output end of transition waceguide array, that diffraction progression is even level, passes through grating
Diffraction realize that each light beam becomes 80 direction of vertical substrates from parallel 80 direction of substrate.
Active optical phased array photon integrated chip 100 according to an embodiment of the present invention, main laser 10 respectively from laser are
Based on same substrate 80, same epitaxial material, same frequency (or wavelength) control structure, having on this basis can be quick, micro-
The frequency control structure of tune ensures that each free working frequency of laser is close by the consistency of material, structure and hand work,
And frequency control ability is further strengthened by fine tuning structure, it takes the lead in realizing a main laser 10 to multiple from sharp in the world
Light device stablizes injection locking, so that the general power of output light is by each from laser phase by being integrated in the same substrate
It is dry to be formed by stacking, realize the purpose for having integrated chip and the high advantage of emergent power concurrently.
Referring next to the preparation for the active optical phased array photon integrated chip that attached drawing description proposes according to embodiments of the present invention
Method.
Fig. 2 is the flow chart of the preparation method of the active optical phased array photon integrated chip of one embodiment of the invention.
As shown in Fig. 2, the preparation method of the active optical phased array photon integrated chip the following steps are included:
In step s 201, in highly doped n-type semiconductor substrate epitaxial laser active material structure, including N-shaped
Under-clad layer, undoped lower waveguide layer, undoped quantum well structure, ducting layer, N-shaped grating layer in p-type.
In step S202, the optical grating construction of identical screen periods is made in main laser and from laser area part, is carved
Erosion depth includes ducting layer on N-shaped grating layer and part of p-type, and grating Bragg wavelength is greater than Quantum Well energy bandgap wavelength 40-60nm,
Rest part etches comprehensively, and etching depth includes ducting layer on N-shaped grating layer material and part of p-type.
In step S203, secondary epitaxy material, including p-type top covering, heavily-doped p-type Ohmic contact semiconductor material.
In step S204, main laser and the shallow ridge waveguide structure that same widths, depth are respectively etched from laser, etching
Depth includes p-type ohmic contact layer, p-type top covering, main laser and couples plot structure from optical isolation is etched between laser, is carved
Erosion depth includes p-type ohmic contact layer, p-type top covering, ducting layer, undoped quantum well structure, undoped lower waveguide layer in p-type
With partially n-type under-clad layer.
In step S205, electrode insulation film is made, exposes main laser and respectively from laser ridge waveguide top.
In step S206, p-type electrode structure is made, makes film resistor and metal electricity in main laser ridge waveguide side
Pole.
In step S207, n-type substrate is thinned to 70~130 μ m-thicks.
In step S208, N-shaped public electrode is made in substrate back.
In step S209, cleavage chip strip, cleavage position is in main laser and from laser end face position.
In step S210, in main laser and from two end face coating anti reflection optical films of laser, reflectivity is less than
1%.
It should be noted that the device that chip includes all makes on the same substrate, main laser and from laser institute
The extension number needed is no more than twice, and transition waceguide only needs an extension, and optical phase modulator only needs an extension.Wherein, have
Optical phased array laser array chip extension total degree needed for whole preparation process in source is no more than twice.
In addition, in one embodiment of the invention, using selective area epitaxy technology, so that optical isolation coupled zone,
Phase-modulator, transition waceguide forbidden bandwidth be greater than main laser, the forbidden bandwidth from laser, do not have substantially to shoot laser
There is absorption.
In one particular embodiment of the present invention, the active optical phased array integreted phontonics for being about 1550nm with a kind of wavelength
For chip preparation method.The active optical phased array photon integrated chip includes main laser, optical isolation coupled zone, from laser
Array, optical phase modulator array, transition waceguide array, light field radiating curtain, positive electrode, substrate and back electrode.All devices
Part uses identical epitaxial structure.Specific embodiment is as follows:
In a highly doped N-shaped InP substrate, grown using metal-organic chemical vapor extension (MOVPE) as follows
Material: N-shaped InP buffer layer (thickness 1000nm, doping concentration about 1 × 1018cm-3), i layers of 400nm, including undoped lattice
With InGaAsP lower waveguide layer (thickness 100nm, light wavelength of fluorescence 1150nm), InGaAsP active layer multiple quantum wells (10 pairs of quantum
Trap, the wide 10nm of trap, 0.7% compressive strain, light wavelength of fluorescence 1550nm build width 10nm, lattice matched materials, light wavelength of fluorescence
1200nm), ducting layer (thickness 100nm, light wavelength of fluorescence 1150nm), p-type InP wave on undoped type Lattice Matching InGaAsP
Leading upper limiting layer, (thickness 1500nm, doping concentration is from 3 × 1017cm-3Be gradient to is 1 × 1018cm-3) and InGaAs ohm of p-type connect
Contact layer (thickness 100nm, doping concentration about 1 × 1019cm-3)。
Using plasma enhances chemical vapor deposition (PECVD), and deposition thickness is 400nm on p-type ohmic contact layer
SiNx.Using electron beam exposure, formed main laser and waveguide from laser array and side-coupled surface grating, light every
From coupled zone, optical phase modulator array, transition waceguide array photoetching agent pattern.Main laser and from laser waveguide width
About 2 μm, optical grating diffraction series is second order, and the period is about 480nm.Optical phase modulator width is about 2 μm, the width of transition waceguide
Spend 0.4 μm that the other end is tapered to from 2 μm of the one end for connecting optical phase modulator.Using reactive ion etching (RIE),
With SF6For reaction gas, the pattern of waveguide and grating is transferred to SiN from photoresistx.It is carved using electric induction coupled plasma
It loses (ICP), with Cl2、CH4、H2It is reaction gas with Ar, etches and limited in p-type InGaAs ohmic contact layer and p-type InP waveguide
Layer forms the waveguide and side-coupled band gap structure of InP-base semiconductor material.Photoetching, photoresist overlay live main laser,
From laser, optical phase modulator, using electric induction coupled plasma etch (ICP), with Cl2、CH4、H2It is reaction gas with Ar
Body, i layers of etching and N-shaped InP, form transition waceguide and light field radiating curtain.
Using atomic layer deposition (ALD), deposition thickness is 50nm in InP-base waveguide and side-coupled band gap structure
SiNx, form the side wall passivation to InP-base waveguide and grating.Rotary coating light-sensitive polyimide, so that the polyimides is filled out
Fill the sunk area of InP-base waveguide and grating.Photoetching removes the polyimides at the top of InP-base waveguide and grating.Further, it uses
RIE, with SF6For reaction gas, the SiN at the top of InP-base waveguide and grating is removedx, expose at the top of InP-base waveguide and grating
InGaAs ohmic contact layer.Photoetching, then using chemical corrosion liquid removal main laser, optical isolation coupled zone, from laser battle array
Column, waveguide between optical phase modulator array InGaAs ohmic contact layer, realize main laser, optical isolation coupled zone, from
It is electrically isolated between laser array, optical phase modulator array.Photoetching forms main laser, from laser array, optical isolation coupling
Close the p-type positive electrode pattern in area and optical phase modulator array.Then successively acetone ultrasound is removed after magnetron sputtering Ti, Pt, Au
Form main laser, the p-type positive electrode from laser array, optical isolation coupled zone and optical phase modulator array.For
Main laser and for laser, the ohmic contact layer contact at the top of p-electrode and InP-base waveguide and grating, electric current can be from
The injection of the semiconductor portions such as the InGaAs ohmic contact layer and p-type layer of InP of waveguide and grating, and cannot be from the SiN of filling gratingx
It is injected with insulator portions such as polyimides, so that the side-coupled grating is not only due to InP semiconductor and SiNx, polyimides
Refractive index cycle distribution have index-coupled mechanism, and because Injection Current periodic distribution formed gain coupling machine
System.InP substrate is carried out from the back side thinned, magnetron sputtering Ni, Au are as ground electrode.
The active optical phased array photon integrated chip of the embodiment of the present invention, main laser and passes through respective from laser array
Positive electrode inject 1.1~4 times of threshold current densities so that main laser and from laser lasing.Optical phase modulator array
In each modulator apply respective current signal, generate the phase difference of each Shu Jiguang.Optical isolation coupled zone, phase-modulator
Array and transition waceguide are not less than the current density of transparent carrier current by the injection of respective positive electrode.
It in another embodiment of the present invention, is the active optical phased array photon integrated chip of 1310nm with operation wavelength
For.Active optical phased array photon integrated chip includes main laser, optical isolation coupled zone, from laser array, phase-modulation
Device array, transition waceguide, light field radiating curtain, main laser and from laser array epitaxial structure having the same and waveguide junction
Structure, optical isolation coupled zone and transition waceguide epitaxial structure having the same and waveguiding structure, optical isolation coupled zone, phase-modulator
The bandwidth of array, transition waceguide and light field radiating curtain is greater than main laser and the forbidden bandwidth from laser array, right
Shoot laser does not absorb substantially.Specific embodiment is as follows:
Using selective area epitaxy technology, so that the forbidden bandwidth of optical isolation coupled zone, phase-modulator, transition waceguide
Greater than main laser, from the forbidden bandwidth of laser, shoot laser is not absorbed substantially.In highly doped N-shaped InP substrate
On, using the SiO of PECVD deposition thickness about 200nm2, photoetching, buffered HF acid wet etching are formed in different device areas
SiO of different size2Pattern.Wherein, the SiO of all device areas2Opening width is identical, 5~20 μm of opening width range, main
Laser and SiO from laser region2Width is 100~500 μm, the SiO in optical modulator region2Width is 100~500 μm,
The SiO of optical isolation coupled zone and transition waceguide region2Width is 100~500 μm.Using MOVPE growing n-type InP buffer layer, non-
Adulterate Lattice Matching InGaAsP lower waveguide layer, InGaAsP active layer multiple quantum wells, undoped type Lattice Matching InGaAsP upper ripple
Conducting shell, p-type InP waveguide upper limiting layer and p-type InGaAs ohmic contact layer.Using optical phase modulator, optical isolation coupled zone and
The SiO in transition waceguide region2The width and main laser, the SiO from laser region of pattern2The difference of pattern width, so that
Master and slave laser active layer gain spectral peak about 1310nm, and optical phase modulator, optical isolation coupled zone and transition waceguide active area
Absorption spectral peak it is 100~300nm shorter than laser.
Using plasma enhances chemical vapor deposition (PECVD), and deposition thickness is 400nm on p-type ohmic contact layer
SiNx.Using electron beam exposure, formed main laser and waveguide from laser array and side-coupled surface grating, light every
From coupled zone, optical phase modulator array, transition waceguide array photoetching agent pattern.Main laser and from laser waveguide width
About 2 μm, optical grating diffraction series is second order, and the period is about 410nm.Optical phase modulator width is about 2 μm, the width of transition waceguide
Spend 0.4 μm that the other end is tapered to from 2 μm of the one end for connecting optical phase modulator.Using reactive ion etching (RIE),
With SF6For reaction gas, the pattern of waveguide and grating is transferred to SiN from photoresistx.It is carved using electric induction coupled plasma
It loses (ICP), with Cl2、CH4、H2It is reaction gas with Ar, etches and limited in p-type InGaAs ohmic contact layer and p-type InP waveguide
Layer forms the waveguide and side-coupled band gap structure of InP-base semiconductor material.Photoetching, photoresist overlay live main laser,
From laser, optical phase modulator, using electric induction coupled plasma etch (ICP), with Cl2、CH4、H2It is reaction gas with Ar
Body, i layers of etching and N-shaped InP, form transition waceguide and light field radiating curtain.
Using atomic layer deposition (ALD), deposition thickness is 50nm in InP-base waveguide and side-coupled band gap structure
SiNx, form the side wall passivation to InP-base waveguide and grating.Rotary coating light-sensitive polyimide, so that the polyimides is filled out
Fill the sunk area of InP-base waveguide and grating.Photoetching removes the polyimides at the top of InP-base waveguide and grating.Further, it uses
RIE, with SF6For reaction gas, the SiN at the top of InP-base waveguide and grating is removedx, expose at the top of InP-base waveguide and grating
InGaAs ohmic contact layer.Photoetching, then using chemical corrosion liquid removal main laser, optical isolation coupled zone, from laser battle array
Column, waveguide between optical phase modulator array InGaAs ohmic contact layer, realize main laser, optical isolation coupled zone, from
It is electrically isolated between laser array, optical phase modulator array.Photoetching forms main laser, from laser array, optical isolation coupling
Close the p-type positive electrode pattern in area and optical phase modulator array.Then successively acetone ultrasound is removed after magnetron sputtering Ti, Pt, Au
Form main laser, the p-type positive electrode from laser array, optical isolation coupled zone and optical phase modulator array.Swash for main
Light device and for laser, the ohmic contact layer contact at the top of p-electrode and InP-base waveguide and grating, electric current can be from waveguide
And InGaAs ohmic contact layer and the semiconductor portions injection such as p-type layer of InP of grating, and cannot be from the SiN of filling gratingxWith it is poly-
The insulator portions such as acid imide injection, so that the side-coupled grating is not only due to InP semiconductor and SiNx, polyimides folding
Rate period profile is penetrated with index-coupled mechanism, and because the periodic distribution of Injection Current forms gain coupling mechanism.
InP substrate is carried out from the back side thinned, magnetron sputtering Ni, Au are as ground electrode.
The active optical phased array photon integrated chip of the embodiment of the present invention, main laser and passes through respective from laser array
Positive electrode inject 1.1~4 times of threshold current densities so that main laser and from laser lasing.In phase modulator array
Each modulator apply respective voltage signal, generate the phase difference of each Shu Jiguang.Optical isolation coupled zone and little bellow conducting
Cross the current density that respective positive electrode injection is not less than transparent carrier current.
It is the active optical phased array photon integrated chip of 850nm with operation wavelength in yet another embodiment of the present invention
For.Active optical phased array photon integrated chip includes main laser, optical isolation coupled zone, from laser array, light phase tune
Device array processed, transition waceguide array, light field radiating curtain, main laser and from laser array epitaxial structure having the same and
Waveguiding structure, optical isolation coupled zone and transition waceguide epitaxial structure having the same and waveguiding structure, optical isolation coupled zone, phase
Forbidden band of the bandwidth of modulator array, transition waceguide and light field radiating curtain greater than main laser and from laser array is wide
Degree, does not absorb shoot laser substantially.Specific embodiment is as follows:
First time extension.In heavily doped n+On-GaAs substrate, using MOVPE growth n-GaAs buffer layer (thickness about 500nm,
Doping concentration about 1 × 1018cm-3), N-shaped Lattice Matching Ga1-xAlx(thickness about 1000nm, x ≈ 0.45 are adulterated dense As lower limit layer
Degree about 5 × 1017cm-3), undoped Lattice Matching Ga1-xAlxIt is As lower waveguide layer (thickness about 150nm, x ≈ 0.06), undoped
Strain GaAs/Ga1-xAlxAs multiple quantum well active layer (10 periods, GaAs Quantum Well, thickness about 10nm；Ga1-xAlxAs potential barrier,
Thickness about 10nm, x ≈ 0.06), undoped Lattice Matching Ga1-xAlxThe upper ducting layer of As (thickness about 150nm, x ≈ 0.06).
Preparing grating.In main laser, from laser and light field radiating curtain part, exposed using holographic exposure or electron beam
Light forms periodic photoetching agent pattern, and wet process or dry etching do not have the GaAs and GaAlAs of photoresist protection zone, etching
1~5 Quantum Well of removal forms the wavelength selection structure containing gain coupling mechanism, main laser and from laser component grating
Series is 1 grade or 3 grades, and the grating series of light field radiating curtain part is 2 grades or 4 grades.
Second of extension grows Lattice Matching p-Ga using MOVPE1-xAlxAs upper limiting layer (thickness 1000nm, x ≈
0.45, doping concentration about 5 × 1017cm-3) and p+- GaAs ohmic contact layer (thickness 300nm, doping concentration about 1 × 1019cm-3)。
Photoetching, wet process or dry etching go out the region of optical isolation coupled zone, optical phase modulator and transition waceguide.
Third time extension grows n-GaAs buffer layer (thickness about 500nm, doping concentration about 1 × 10 using MOVPE18cm-3), N-shaped Lattice Matching Ga1-xAlx(thickness about 1000nm, x ≈ 0.45, doping concentration is about 5 × 10 to As lower limit layer17cm-3)、
Undoped Lattice Matching Ga1-xAlxAs lower waveguide layer (thickness about 150nm, x ≈ 0.06), undoped strain GaAs/Ga1-xAlxAs
(active layer forbidden bandwidth is significantly larger than laser, 10 periods, GaAs Quantum Well, thickness about 10nm to multiple quantum well active layer；
Ga1-xAlxAs potential barrier, thickness about 10nm, x ≈ 0.06), undoped Lattice Matching Ga1-xAlxThe upper ducting layer of As (thickness about 150nm,
x≈0.06)、p-Ga1-xAlxAs upper limiting layer (thickness 1000nm, x ≈ 0.45, doping concentration about 5 × 1017cm-3) and p+-GaAs
Ohmic contact layer (thickness 300nm, doping concentration about 1 × 1019cm-3)。
Make the waveguiding structure of main laser, optical isolation coupled zone, optical phase modulator and transition waceguide.Using PECVD
The SiN of deposition thickness about 1000nmx, it is lithographically formed the bar paten that width range is 1~3 μm, uses RIE, with SF6For reaction
Gas etching SiNx, use ICP, with Cl2And BCl3P is etched for reaction gas+- GaAs ohmic contact layer and p-Ga1-xAlxOn As
Limiting layer forms main laser, from the waveguiding structure of laser array and optical phase modulator.Photoetching forms covering main laser
Device, from the pattern of laser array and light phase modulation.Use ICP, with Cl2And BCl3For reaction gas, optical isolation coupling is etched
The p-Ga in area and transition waceguide part1-xAlxThe upper ducting layer of As, GaAs/Ga1-xAlxAs multiple quantum well active layer, n-Ga1-xAlxAs
Lower waveguide layer, n-Ga1-xAlxAs lower limit layer and n-GaAs buffer layer form the waveguide junction of optical isolation coupled zone and transition waceguide
Structure.
Make the electrode of main laser, optical isolation coupled zone, optical phase modulator and transition waceguide.It is deposited using PECVD
The SiN of thickness about 100nmx, photoetching exposes the SiN at the top of device waveguide above ohmic contact layerx, use RIE, with SF6For reaction
SiN above gas etching ohmic contact layerx.Photoetching forms main laser, optical isolation coupled zone, optical phase modulator and mistake
Cross the p-type positive electrode pattern of waveguide.Using magnetron sputtering Ti, Pt, Au, acetone ultrasound is removed to form main laser, optical isolation coupling
Close the p-type positive electrode in area, optical phase modulator and transition waceguide.Substrate thinning, magnetron sputtering Ni, Au, which are formed, single chip integrated to be had
The N-shaped ground electrode of the coherent laser array chip of source optical phased array.
The active optical phased array photon integrated chip of the embodiment of the present invention, main laser and passes through respective from laser array
Positive electrode inject 1.1~4 times of threshold current densities so that main laser and from laser lasing.Optical phase modulator array
In each modulator apply respective voltage signal, generate the phase difference of each Shu Jiguang.Optical isolation coupled zone and transition waceguide
It is not less than the current density of transparent carrier current by the injection of respective positive electrode.
The preparation method of active optical phased array photon integrated chip according to an embodiment of the present invention, by main laser, respectively from
Laser is based on same substrate, same epitaxial material, same frequency (or wavelength) control structure, and having on this basis can be fast
Speed, the frequency control structure of fine tuning ensure each free working frequency of laser by the consistency of material, structure and hand work
It is close, and frequency control ability is further strengthened by fine tuning structure, take the lead in realizing a main laser to multiple in the world
Stablize injection locking from laser, so that the general power of output light is by each from laser by being integrated in the same substrate
Device coherent superposition forms, and realizes the purpose for having integrated chip and the high advantage of emergent power concurrently.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise ", " axial direction ", " radial direction ", " circumferential direction " be orientation based on the figure or
Positional relationship is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must
There must be specific orientation, be constructed and operated in a specific orientation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include at least one this feature.In the description of the present invention, the meaning of " plurality " is at least two, such as two, three
It is a etc., unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；It can be mechanical connect
It connects, is also possible to be electrically connected；It can be directly connected, can also can be in two elements indirectly connected through an intermediary
The interaction relationship of the connection in portion or two elements, unless otherwise restricted clearly.For those of ordinary skill in the art
For, the specific meanings of the above terms in the present invention can be understood according to specific conditions.
In the present invention unless specifically defined or limited otherwise, fisrt feature in the second feature " on " or " down " can be with
It is that the first and second features directly contact or the first and second features pass through intermediary mediate contact.Moreover, fisrt feature exists
Second feature " on ", " top " and " above " but fisrt feature be directly above or diagonally above the second feature, or be merely representative of
First feature horizontal height is higher than second feature.Fisrt feature can be under the second feature " below ", " below " and " below "
One feature is directly under or diagonally below the second feature, or is merely representative of first feature horizontal height less than second feature.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office
It can be combined in any suitable manner in one or more embodiment or examples.In addition, without conflicting with each other, the skill of this field
Art personnel can tie the feature of different embodiments or examples described in this specification and different embodiments or examples
It closes and combines.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, modifies, replacement and variant.
Claims (9)
1. a kind of active optical phased array photon integrated chip characterized by comprising
Coherent laser array, the coherent laser array has main laser, optoisolator and multiple from laser, with logical
Cross the MS master-slave laser that same material and technique are realized, the main laser and described from laser lasing, by unidirectionally injecting
Lock mode makes the multiple to be concerned with from each in laser from good with identical frequency and stationary phase between laser
Property, wherein the main laser and multiple distributed feedback semiconductor laser, the main laser and multiple are used from laser
From the grating of the distributed feedback semiconductor laser of laser contain gain profiles cyclically-varying or the main laser
Distributted bragg reflector semiconductor laser is used from laser with multiple；
Optical phase modulator array, optical phase modulator array have multiple optical phase modulators, to pass through electric signal modulation methods
Formula controls in the multiple optical phase modulator each optical phase modulator to the phase delay of light；And
Transition waceguide array and light field radiating curtain, for adjust it is different it is being issued from laser, by different light phase modulation
Device and with different light phases delay coherent beam carry out wave beam and transmitting position, with according to the difference of phase delay decision institute
State coherent superposition beam exit direction.
2. active optical phased array photon integrated chip according to claim 1, which is characterized in that the main laser and
It is the multiple from the wavelength selection structure of laser be surface grating.
3. active optical phased array photon integrated chip according to claim 1, which is characterized in that the main laser and more
It is a from laser semiconductor extension structure having the same, optical waveguide structure and wavelength selection structure.
4. active optical phased array photon integrated chip according to claim 1, which is characterized in that the coherent laser battle array
Column have optical isolation coupled zone, wherein the forbidden bandwidth of the optical isolation coupled zone, optical phase modulator and transition waceguide is greater than
The main laser and from laser, so that the optical isolation coupled zone, the optical phase modulator and the transition waceguide pair
The main laser and the light issued from laser do not absorb.
5. active optical phased array photon integrated chip according to claim 4, which is characterized in that the optical isolation coupling
Area, the transition waceguide, the main laser and the multiple from laser semiconductor extension structure having the same, the light
Isolation coupling area and the transition waceguide Injection Current, the electric current are not less than transparent electric current.
6. active optical phased array photon integrated chip according to claim 1, which is characterized in that the main laser and from
The epitaxial layer of laser uses InP-base semiconductor material or GaAs, GaP base semiconductor material.
7. active optical phased array photon integrated chip according to claim 1, which is characterized in that the light field radiating curtain
Spacing be not more than optical maser wavelength half, wherein the light field radiating curtain be inclined etching mirror array or even number
Grade array of diffraction gratings or the light field radiating curtain containing nanometer metal structure.
8. active optical phased array photon integrated chip according to claim 1, which is characterized in that the coherent laser battle array
Column, the optical phase modulator array, the transition waceguide array and light field radiating curtain make on the same substrate, with collection
At on the same base.
9. a kind of preparation method of such as described in any item active optical phased array photon integrated chips of claim 1-8, feature
It is, comprising the following steps:
The active material structure of epitaxial laser in highly doped n-type semiconductor substrate, including N-shaped under-clad layer, undoped lower wave
Conducting shell, undoped quantum well structure, ducting layer, N-shaped grating layer in p-type；
The optical grating construction of identical screen periods is made in main laser and from laser area part, etching depth includes N-shaped grating
Ducting layer on layer and part of p-type, grating Bragg wavelength are greater than Quantum Well energy bandgap wavelength 40-60nm, and rest part etches comprehensively,
Etching depth includes ducting layer on N-shaped grating layer material and part of p-type；
Secondary epitaxy material, including p-type top covering, heavily-doped p-type Ohmic contact semiconductor material；
The main laser and the shallow ridge waveguide structure that same widths, depth are respectively etched from laser, etching depth includes p-type Europe
Nurse contact layer, p-type top covering, the main laser and between laser etch optical isolation couple plot structure, etching depth packet
Include p-type ohmic contact layer, p-type top covering, ducting layer, undoped quantum well structure, undoped lower waveguide layer and part n in p-type
Type under-clad layer；
Electrode insulation film is made, exposes the main laser and described respectively from laser ridge waveguide top；
P-type electrode structure is made, makes film resistor and metal electrode in main laser ridge waveguide side；
N-type substrate is thinned to 70~130 μ m-thicks；
N-shaped public electrode is made in substrate back；
Cleavage chip strip, cleavage position is in the main laser and described from laser end face position；And
In the main laser and described from two end face coating anti reflection optical films of laser, reflectivity is less than 1%.
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