CN106384751A - Silicon-based short wave/medium wave laminated layer two-color HgCdTe material and preparation method thereof - Google Patents
Silicon-based short wave/medium wave laminated layer two-color HgCdTe material and preparation method thereof Download PDFInfo
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- CN106384751A CN106384751A CN201610896191.3A CN201610896191A CN106384751A CN 106384751 A CN106384751 A CN 106384751A CN 201610896191 A CN201610896191 A CN 201610896191A CN 106384751 A CN106384751 A CN 106384751A
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- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 title claims abstract description 171
- 239000000463 material Substances 0.000 title claims abstract description 67
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 55
- 239000010703 silicon Substances 0.000 title claims abstract description 55
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 96
- 238000010521 absorption reaction Methods 0.000 claims abstract description 45
- 230000004888 barrier function Effects 0.000 claims abstract description 36
- 239000002131 composite material Substances 0.000 claims abstract 3
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims description 90
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 61
- 230000012010 growth Effects 0.000 claims description 42
- 238000003475 lamination Methods 0.000 claims description 35
- 150000001875 compounds Chemical class 0.000 claims description 14
- 238000002161 passivation Methods 0.000 claims description 11
- 239000011701 zinc Substances 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 5
- 230000006641 stabilisation Effects 0.000 claims description 4
- 238000011105 stabilization Methods 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- 229910004613 CdTe Inorganic materials 0.000 claims 10
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 239000008367 deionised water Substances 0.000 description 11
- 229910021641 deionized water Inorganic materials 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 230000009977 dual effect Effects 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000011982 device technology Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229960002415 trichloroethylene Drugs 0.000 description 2
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 2
- -1 CdTe compound Chemical class 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000032696 parturition Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention relates to a silicon-based short wave/medium wave laminated layer two-color HgCdTe material and a preparation method thereof. The silicon-based short wave/medium wave laminated layer two-color HgCdTe material comprises a silicon composite substrate and also comprises a HgCdTe short wave absorption layer, a HgCdTe barrier layer and a HgCdTe medium wave absorption layer which are orderly arranged from a bottom to a top on the silicon composite substrate. The HgCdTe short wave absorption layer is Hg(1-x)CdxTe, wherein x is equal to 0.4 to 0.41, the HgCdTe barrier layer is Hg(1-x)CdxTe, wherein x is equal to 0.5 to 0.55, and the HgCdTe medium wave absorption layer is Hg(1-x)CdxTe, wherein x is equal to 0.3 to 0.31. By using the technical scheme of the invention, the silicon-based short wave/medium wave laminated layer two-color HgCdTe material is obtained, and a blank that the prior art has no silicon-based short wave/medium wave laminated layer two-color HgCdTe material is filled.
Description
Technical field
The present invention relates to semiconductor applications, particularly to a kind of silicon substrate short/medium wave lamination two-color HgCdTe material and its system
Preparation Method.
Background technology
With the continuous development of infrared detection technique, infrared stealth technology is also improving constantly, by making in specific band
Upper target has similar emissivity to environmental background, thus leading to the decline of infrared target contrast it is difficult to identify.If one
Thermal imaging system can be detected to the radiation feature of target and environment in multiband simultaneously, by under the different radiation wavelength of contrast
Radiation feature it is possible to suppress to complicated background, realize infrared acquisition and do not restricted by environment, exactly extract mesh
Mark feature, improves the Effect on Detecting to target, in military and related people such as target homing, missile warning detection, intelligence reconnaissance
Had broad application prospects with field.
The preparation of lamination double-colored HgCdTe material is the basis realizing double-color detector, traditional short/medium wave dual-color detection
Device adopts cadmium-zinc-teiluride (CdZnTe) as backing material, and the cost of material is very high, and mechanical strength is poor, temperature control in growth course
System is more difficult, and difficulty is very big in terms of the substrate grinding and polishing process of (211) crystal orientation, and surface damage is more, and this results in extension
After HgCdTe, surface defect density is higher；It is difficult to the preparation of large scale material simultaneously, limits two-color device to large area array
Direction is developed.Si substrate has as a kind of backing material that substitutes：Greater area of substrate, lower backing material cost and
The automatic heating Stress match of Si reading circuit, higher mechanical strength and flatness and potentially realize one chip infrared focus plane
(IRFPA) the features such as ability, be a kind of splendid replacement backing material.Si base monochrome HgCdTe material is through for many years simultaneously
Research and development, has been mature on the whole in terms of shortwave and medium wave, or even obtains quality good long wave HgCdTe material；Wherein
Shortwave, medium wave device scale reach 2k × 2k, and performance can match in excellence or beauty with cadmium-zinc-teiluride base device simultaneously.But, now not a kind of
Silicon substrate is short/medium wave two-color HgCdTe material.
Additionally, in terms of device architecture, Raytheon company of the U.S., Teledyne company etc. are all adulterated directly using original position
Become the laminated construction of knot, DRS company directly adopts adhesive technology, these technology paths are especially mixed in situ implementing
Miscellaneous technical difficulty is larger, and incompatible with existing device technology route.French Sofradir company adopts the double note of half-plane
Enter structure, the growth course of material is relatively easy, Technology for Heating Processing difficulty reduce, device technology also with current process compatible, with
Sample can be realized detecting simultaneously, and shows that its chip performance is doping to the performance of knot laminated construction than original position currently without evidence
Difference.
Content of the invention
In order to fill up not yet occur in prior art silicon substrate short/blank of medium wave lamination two-color HgCdTe material, the present invention
Provide a kind of silicon substrate short/medium wave lamination two-color HgCdTe material and preparation method thereof.
The present invention provide a kind of silicon substrate short/medium wave lamination two-color HgCdTe material, including：Silicon-base compound substrate, and
In the mercury cadmium telluride short-wave absorption layer, mercury cadmium telluride barrier layer and the mercury cadmium telluride that are arranged in order from down to up on described silicon-base compound substrate
Ripple absorbed layer；
Described mercury cadmium telluride short-wave absorption layer is Hg1-xCdxTe, wherein x=0.4～0.41；
Described mercury cadmium telluride barrier layer is Hg1-xCdxTe, wherein x=0.5～0.55；
Described mercury cadmium telluride medium wave absorbed layer is Hg1-xCdxTe, wherein x=0.3～0.31.
Present invention also offers a kind of silicon substrate short/preparation method of medium wave lamination two-color HgCdTe material, walk including following
Suddenly：
Grow arsenic passivation layer, zinc telluridse cushion and cadmium telluride buffer layer successively on a silicon substrate, obtain silicon substrate and be combined
Substrate；
Mercury cadmium telluride short-wave absorption layer, mercury cadmium telluride barrier layer and mercury cadmium telluride medium wave are grown successively on described silicon-base compound substrate
Absorbed layer.
The present invention has the beneficial effect that：
The embodiment of the present invention is passed through to grow the mercury cadmium telluride shortwave of particular components on silicon-base compound substrate from down to up successively
Absorbed layer, mercury cadmium telluride barrier layer and mercury cadmium telluride medium wave absorbed layer, obtain silicon substrate short/medium wave lamination two-color HgCdTe material, fill up
Do not have in prior art silicon substrate short/blank of medium wave lamination two-color HgCdTe material.
Brief description
Fig. 1 be the embodiment of the present invention silicon substrate short/structural representation of medium wave lamination two-color HgCdTe material；
Fig. 2 be embodiment of the present invention example 1 silicon substrate short/structural representation of medium wave lamination two-color HgCdTe material；
Fig. 3 be the embodiment of the present invention silicon substrate short/flow chart of medium wave lamination two-color HgCdTe material preparation method；
Fig. 4 is embodiment of the present invention mercury cadmium telluride short-wave absorption layer temperature setting curve schematic diagram；
Fig. 5 is half-plane Dual Implantations device architecture schematic diagram of the present invention.
Specific embodiment
It is more fully described the exemplary embodiment of the disclosure below with reference to accompanying drawings.Although showing the disclosure in accompanying drawing
Exemplary embodiment it being understood, however, that may be realized in various forms the disclosure and should not be by embodiments set forth here
Limited.On the contrary, these embodiments are provided to be able to be best understood from the disclosure, and can be by the scope of the present disclosure
Complete conveys to those skilled in the art.
In order to fill up not yet occur in prior art silicon substrate short/blank of medium wave two-color HgCdTe material, the present invention provides
A kind of silicon substrate is short/medium wave two-color HgCdTe material and preparation method thereof, below in conjunction with accompanying drawing and embodiment, the present invention is entered
Row further describes.It should be appreciated that specific embodiment described herein is only in order to explain the present invention, do not limit this
Invention.
According to embodiments of the invention, there is provided a kind of silicon substrate is short/medium wave lamination two-color HgCdTe material, Fig. 1 is this
The silicon substrate of bright embodiment is short/structural representation of medium wave lamination two-color HgCdTe material, as shown in figure 1, being implemented according to the present invention
The silicon substrate of example is short/and medium wave lamination two-color HgCdTe material includes：Silicon-base compound substrate, and on described silicon-base compound substrate by
Under to the mercury cadmium telluride short-wave absorption layer being above arranged in order, mercury cadmium telluride barrier layer and mercury cadmium telluride medium wave absorbed layer；
Described mercury cadmium telluride short-wave absorption layer is Hg1-xCdxTe, wherein x=0.4～0.41；
Described mercury cadmium telluride barrier layer is Hg1-xCdxTe, wherein x=0.5～0.55；
Described mercury cadmium telluride medium wave absorbed layer is Hg1-xCdxTe, wherein x=0.3～0.31.
Because device adopts back-illuminated type, that is, light is injected it is therefore desirable to Mr.'s long shortwave absorbed layer from Si substrate direction, then
Carry out the growth of medium wave absorbed layer again；And in order to prevent from producing cross-talk between short-wave absorption layer and medium wave absorbed layer, need to be in two-layer
Between growth one layer of mercury cadmium telluride barrier layer carry out playing buffer action.
Identical with Si base monochrome HgCdTe material, Si base compound substrate is the base of lamination double-colored HgCdTe material and device
Plinth.On design of material, Si base compound substrate be designed without too big difference, grow arsenic (As) respectively in Si substrate surface
Passivation layer, zinc telluridse (ZnTe) cushion and cadmium telluride (CdTe) cushion.Preferably, shown silicon substrate is Si (211) substrate.
As a kind of specific embodiment, described mercury cadmium telluride short-wave absorption layer is Hg1-xCdxTe, wherein x=0.4；Institute
Stating mercury cadmium telluride barrier layer is Hg1-xCdxTe, wherein x=0.5；Described mercury cadmium telluride medium wave absorbed layer is Hg1-xCdxTe, wherein x=
0.3.
The thickness of layers of material passes through the result of our early stage Theoretical Calculation and experiment, and mercury cadmium telluride short-wave absorption layer needs not little
In 4.5 μm, generally 5～6 μm；The purpose on mercury cadmium telluride barrier layer be in order to prevent electric current in involve between longwave absorption layer stream
Cross-talk given birth to by movable property, after calculating by heterojunction model, in the case of 0.5-0.55 component, should be not less than 1 μm, and generally 1.0
～1.2 μm；The thickness design of mercury cadmium telluride medium wave absorbed layer will take into account etching in absorbed layer efficiency and device processes, electricity simultaneously
The techniques such as pole realize difficulty, be 4.5～4.8 μm.
As a kind of specific embodiment, the thickness of described mercury cadmium telluride short-wave absorption layer is 5 μm；Described mercury cadmium telluride stops
The thickness of layer is 1.2 μm；The thickness of described mercury cadmium telluride medium wave absorbed layer is 4.5 μm.
In order to more detailed explanation silicon substrate of the present invention short/medium wave lamination two-color HgCdTe material, provide example 1.Fig. 2 is
The silicon substrate of embodiment of the present invention example 1 is short/structural representation of medium wave lamination two-color HgCdTe material, as shown in Fig. 2 G layer is
Si substrate；F layer be As passivation layer, keep material polarity it is ensured that B looks unfamiliar length；E layer is that migration strengthens (ZnTe) cushion, main
To ensure two-dimensional growth in order to maintain material can grow along (211) crystal orientation simultaneously；D layer is cushion, primary barrier mismatch bit
Wrong it is ensured that the high-quality of HgCdTe epitaxial layer；C layer is mercury cadmium telluride short-wave absorption layer；B layer is mercury cadmium telluride barrier layer, prevents shortwave
Cross-talk and medium wave layer between；A layer is mercury cadmium telluride medium wave absorbed layer.
According to embodiments of the invention, there is provided a kind of silicon substrate is short/preparation method of medium wave lamination two-color HgCdTe material,
Fig. 3 be the embodiment of the present invention silicon substrate short/flow chart of medium wave lamination two-color HgCdTe material preparation method, as shown in figure 3, root
According to the silicon substrate of the embodiment of the present invention short/preparation method of medium wave lamination two-color HgCdTe material includes processing as follows：
Step 301, grows arsenic passivation layer, zinc telluridse cushion and cadmium telluride buffer layer successively on a silicon substrate, obtains
Silicon-base compound substrate.
Specifically, step 301 specifically includes following steps：
Carry out the cleaning of extension level Si substrate, remove the natural oxidizing layer of Si substrate, form artificial oxide layer；
Oxide layer removal is carried out to Si substrate, and carries out As passivation；
Grow ZnTe cushion using migrating enhanced mode, and subsequently carry out the growth of CdTe cushion.
More specific, carry out the cleaning of extension level Si substrate, remove the natural oxidizing layer of Si substrate, form artificial oxide layer
Comprise the following steps：
Step a：Si substrate is soaked in trichloro ethylene solution, then uses acetone, ethanol, deionized water rinsing successively；
Step b：By deionized water：H2O2：NH4OH=5:1:1 ratio is mixed, and Si substrate is immersed, finally
Deionized water is rinsed；
Step c：Corroded with the hydrofluoric acid solution of dilution, removed the surface oxide layer of Si substrate；
Step d：By ionized water：H2O2：Hydrochloric acid=4:1:1 ratio is mixed, and Si substrate is immersed, finally uses
Deionized water rinsing；
Step e：If Si substrate surface is in hydrophilic, re-execute the process of step d, otherwise, dry up Si lining with nitrogen
Basal surface, forms new surface oxide layer.
More specific, carry out oxide layer removal to Si substrate, and carry out As passivation comprising the following steps：
Oxide layer removal is carried out to Si substrate, in the temperature-fall period after oxide layer removes, sprays one layer to the surface of Si substrate
As is with the dangling bonds of saturation Si substrate surface.
More specific, grow ZnTe cushion using migrating enhanced mode, and subsequently carry out the life of CdTe cushion
Length comprises the following steps：
It is passivated one layer of Te in the substrate surface of As passivation layer, keep B to look unfamiliar length；
In a certain temperature conditions, Zn source and Te source are alternately opened；
Annealed in a certain temperature conditions, make the ZnTe cushion of growth recover monocrystalline state；
On ZnTe cushion, under the conditions of uniform temperature, extension CdTe cushion；
CdTe buffer growth for a period of time after, open the protection of Te line, and annealed in a certain temperature conditions；
Continued growth CdTe cushion in a certain temperature conditions, anneals at predetermined time intervals once, sets until in advance
The growth time put terminates.
Step 302, grows mercury cadmium telluride short-wave absorption layer, mercury cadmium telluride barrier layer and tellurium on described silicon-base compound substrate successively
Cadmium mercury medium wave absorbed layer.
Specifically, step 302 comprises the following steps：
By the first standard adjustment Hg source setting, CdTe source, the line in Te source, and control the surface temperature of cadmium telluride buffer layer
Degree is maintained at the first preset temperature, to grow mercury cadmium telluride short-wave absorption layer on cadmium telluride buffer layer；
After the growth of mercury cadmium telluride short-wave absorption layer terminates, the institute closing in addition to Hg source is active, controls cadmium telluride buffer layer
Surface temperature be maintained at the second preset temperature, simultaneously by the source temperature of CdTe source be adjusted to be suitable for mercury cadmium telluride barrier growth temperature
Degree, after the temperature stabilization of CdTe source temperature and silicon substrate, and is adjusted the bundle in Hg source, CdTe source and Te source by the second standard setting
Stream, to grow mercury cadmium telluride barrier layer on mercury cadmium telluride short-wave absorption layer；
After mercury cadmium telluride barrier growth terminates, the institute closing in addition to Hg source is active, controls the table of cadmium telluride buffer layer
Face temperature is maintained at the 3rd preset temperature, is adjusted to be suitable for the temperature of mercury cadmium telluride medium wave absorbed layer growth by the source temperature of CdTe source simultaneously
Degree, after the temperature stabilization of CdTe source temperature and silicon substrate, and is adjusted the bundle in Hg source, CdTe source and Te source by the 3rd standard setting
Stream, to grow mercury cadmium telluride medium wave absorbed layer on mercury cadmium telluride barrier layer.
Specifically, described first preset temperature is 180 DEG C, and described second preset temperature is higher than the first preset temperature by 2～5
Degree；Described 3rd preset temperature is lower than the second preset temperature 3～5 degree.
Wherein, described first standard is：Hg source, CdTe source, the line in Te source are respectively 1.3 × 10-4～1.5 × 10- 4Torr、1.1×10-6～1.3 × 10-6Torr、1.5×10-6Torr；Described second standard is：Hg source, CdTe source, Te source
Line is respectively 1.3 × 10-4～1.5 × 10-4Torr、1.4×10-6～1.6 × 10-6Torr、1.5×10-6Torr；Described
Two standards are：Hg source, CdTe source, the line in Te source are respectively 1.3 × 10-4～1.5 × 10-4Torr、0.9×10-6～1.1 ×
10-6Torr、1.5×10-6Torr.
Preferably, described first standard is：Hg source, CdTe source, the line in Te source are respectively 1.4 × 10-4Torr、1.2×
10-6Torr、1.5×10-6Torr；Described second standard is：Hg source, CdTe source, the line in Te source are respectively 1.4 × 10- 4Torr、1.5×10-6Torr、1.5×10-6Torr；Described 3rd standard is：Hg source, CdTe source, the line in Te source are respectively
1.4×10-4Torr、1.0×10-6Torr、1.5×10-6Torr.
More specific, the described surface temperature controlling cadmium telluride buffer layer is maintained at the first preset temperature and includes following step
Suddenly：
Before the thickness of described mercury cadmium telluride short-wave absorption layer reaches preset thickness, by the temperature of mercury cadmium telluride short-wave absorption layer
Degree setting curve obtains the temperature value that each moment needs compensate, and compensates the surface temperature of cadmium telluride buffer layer according to described temperature value
Degree, makes the surface temperature of cadmium telluride buffer layer be maintained at the first preset temperature；
When the thickness of described mercury cadmium telluride short-wave absorption layer reaches preset thickness, the surface temperature of cadmium telluride buffer layer keeps
In the first preset temperature, carry out constant temperature growth；
More specific, the described surface temperature controlling cadmium telluride buffer layer is maintained at the 3rd preset temperature and includes following step
Suddenly：
Before the thickness of described mercury cadmium telluride medium wave absorbed layer reaches preset thickness, by the temperature of mercury cadmium telluride medium wave absorbed layer
Degree setting curve obtains the temperature value that each moment needs compensate, and compensates cadmium telluride buffer layer surface temperature according to described temperature value,
The surface temperature of cadmium telluride buffer layer is made to be maintained at the 3rd preset temperature；
After the thickness of described mercury cadmium telluride medium wave absorbed layer reaches preset thickness, the surface temperature of cadmium telluride buffer layer is protected
Hold in the 3rd preset temperature, carry out constant temperature growth.
Fig. 4 is embodiment of the present invention mercury cadmium telluride short-wave absorption layer temperature setting curve schematic diagram, embodiment of the present invention tellurium cadmium
Hydrargyrum medium wave absorbed layer temperature setting curve is similar with mercury cadmium telluride short-wave absorption layer temperature setting curve.
Using the silicon substrate of the embodiment of the present invention short/silicon substrate that obtains of medium wave lamination two-color HgCdTe material preparation method is short/
Medium wave lamination two-color HgCdTe material is half-plane Dual Implantations structure, and Fig. 5 is that half-plane Dual Implantations device architecture of the present invention is illustrated
Figure, SW HgCdTe represents mercury cadmium telluride short-wave absorption layer in Figure 5, and HgCdTe buffer represents mercury cadmium telluride barrier layer, MW
HgCdTe represents mercury cadmium telluride medium wave absorbed layer.The advantage of Si sill and half-plane Dual Implantations structure is combined by the embodiment of the present invention
Get up, obtain device technology compatibility height, low cost, large-sized short/medium wave double-color detector material.
In order to more detailed explanation embodiment of the present invention silicon substrate short/medium wave lamination two-color HgCdTe material preparation method,
Provide example 2.
Step 1：Extension level (Epi-Ready) (211) crystal orientation Si piece cleans；Si lining is first removed by improved RCA technique
The natural oxidizing layer at bottom, forms artificial oxide layer, thus reducing the oxide layer temperature of Si substrate；Concrete technology is as follows：
I.Si piece soaks 5min in 135 DEG C of trichloro ethylene solution, then uses acetone, ethanol, and deionized water (DIW) is each to be rushed
Wash 3min, organics removal pollutant；
Ii.SC-1 process：Deionized water (DIW)/hydrogen peroxide (H2O2)/ammonia (NH4OH volume ratio) is 5:1:1.Heating
To 70 ± 5 DEG C of submergence Si agreements that contracts a film or TV play to an actor or actress 15min, rinse multipass with DIW, remove the granule foreigns such as the metal ion on surface.
Iii. with Fluohydric acid. (HF) (2%) solution corrosion of dilution, remove surface oxide layer.
Iv.SC-2 process, DIW/H2O2The volume ratio of/hydrochloric acid (HCl) is 4:1:1.It is heated to 70 ± 5 DEG C, plus immersion Si piece
About 15min；Rinse multipass with DIW, if surface is in hydrophobicity, reenter iv. process；Subsequently blown with dry nitrogen (N2)
Dry, new surface oxide layer can be formed.The new oxide layer effective protection Si piece being formed from secondary pollution and can reduce Si piece
Hot deoxidation temperature, provides good preparation for next step process.
Step 2：The oxide layer of Si substrate removes and As passivation；Through the process of step 1, can be by the oxide layer of Si substrate
Temperature drops to less than 900 degree, and oxide layer obtains the clean Si substrate of atom level after removing；Temperature-fall period after oxide layer removes
One layer of As is sprayed with the dangling bonds on saturation Si surface thus realizing the control to substrate surface polarity it is ensured that extension in middle surface to Si
B face (Te face) growth pattern.
Step 3：Migration strengthens (MEE) growth ZnTe；Concrete technology is as follows：
I. the substrate surface in As passivation is passivated one layer of Te, keeps B to look unfamiliar length
Ii. under the conditions of about 300 DEG C, Zn source and Te source are alternately opened, source line value is about 5.0E-7Torr, increases income between the time
Every 10s, every 20s is a cycle, stops after about 60 cycles
Iii., under the protection of Te line, anneal under the conditions of about 360 DEG C 10min.The ZnTe layer of growth is made to recover monocrystalline state,
Improve crystal mass, effectively reduce dislocation density.
Step 4：Carry out the growth of CdTe cushion；CdTe layer growth technique is as follows：
I. on ZnTe cushion, under the conditions of about 280 DEG C, extension CdTe layer.CdTe source line value is about 5.0E-7Torr,
The speed of growth is about 0.6 μm/h
Ii., after growing 3 hours, the protection of Te line, about 400 DEG C of annealing 60s are opened
Iii. continued growth CdTe layer under the conditions of about 280 DEG C, once, annealing conditions are as shown in ii for annealing in every 1 hour.Always give birth to
After long 15 hours, about 9 μm of high-quality CdTe compound lining material can be obtained
Step 5：The growth of HgCdTe short-wave absorption layer；Patent of the present invention is realized in the growth of HgCdTe short-wave absorption layer
One of difficult point, because because the difference of CdTe and HgCdTe slin emissivity and the endothermic reaction of putting of HgCdTe nucleation process lead to
The great variety of base HgCdTe early growth period surface temperature is it is extremely difficult to obtain constant substrate surface temperature；And HgCdTe thin film material
The quality of material is very sensitive to growth temperature.In order to obtain constant superficial growth temperature, need by temperature setting curve Lai
Compensate the change of surface temperature.Absorb the extension of layer material different from HgCdTe medium wave, HgCdTe short-wave absorption layer is due to higher
Cd component, need higher underlayer temperature and less temperature difference, need more to be accurately controlled in technical process.Giving birth to
After length terminates for initial 1 hour, the temperature of substrate surface no longer changes, and hereafter can carry out constant design temperature growth,
The component of this layer of HgCdTe controls between 0.4-0.41, and that is, Hg source, CdTe source, Te source line control respectively 1.4 × 10- 4Torr、1.2×10-6Torr、1.5×10-6Torr, THICKNESS CONTROL is at 5 μm about.
Step 6：The growth on HgCdTe barrier layer；The component on HgCdTe barrier layer controls in 0.5-0.55, i.e. Hg source, CdTe
Source, Te source line control respectively 1.4 × 10-4Torr、1.5×10-6Torr、1.5×10-6Torr, THICKNESS CONTROL is at 1.2 μm
Left and right；Because the growth conditionss on HgCdTe barrier layer are different with short-wave absorption layer, in HgCdTe short-wave absorption layer grown junction
The institute closing after bundle in addition to Hg is active, raises underlayer temperature 2-5 degree, is adjusted to be suitable for HgCdTe by the source temperature of CdTe source simultaneously
The temperature of barrier material, the continued growth after CdTe source temperature and underlayer temperature are stable of about 5-10 minute；
Step 7：HgCdTe medium wave absorbs the growth of layer material；The component of HgCdTe medium wave absorbed layer controls 0.3 about,
I.e. Hg source, CdTe source, Te source line control respectively 1.4 × 10-4Torr、1.0×10-6Torr、1.5×10-6Torr, thickness
Control at 4.5 μm about；Because the growth conditionss of HgCdTe medium wave absorbed layer are different with HgCdTe barrier layer, and due to
Before medium wave Material growth, following Si, CdTe, shortwave HgCdTe absorbed layer and HgCdTe barrier material are all through medium-wave infrared
Wave band, needs to set underlayer temperature setting curve when growing similar to short-wave absorption layer therefore when medium wave absorbed layer grows,
For keeping the constant of material surface temperature.The institute that we close in addition to Hg after the growth of high component HgCdTe terminates is active,
Reduce underlayer temperature 3-5 degree, simultaneously running temperature setting program and by the source temperature of CdTe source be adjusted to be suitable for HgCdTe long wave inhale
Receive the temperature of layer, the continued growth after CdTe source temperature and underlayer temperature are stable of 5-10 minute.
The embodiment of the present invention using based on half-plane Dual Implantations Si base short/the double-colored structure of medium wave lamination can be by Si sill
Combine with the advantage of half-plane Dual Implantations structure, realize device technology compatibility height, low cost, large-sized short/medium wave
Double-color detector material.
The foregoing is only embodiments of the invention, be not limited to the present invention, for those skilled in the art
For member, the present invention can have various modifications and variations.All any modifications within the spirit and principles in the present invention, made,
Equivalent, improvement etc., should be included within scope of the presently claimed invention.
Claims (10)
1. a kind of silicon substrate short/medium wave lamination two-color HgCdTe material it is characterised in that include：Silicon-base compound substrate, and in institute
The mercury cadmium telluride short-wave absorption layer being arranged in order from down to up, mercury cadmium telluride barrier layer and mercury cadmium telluride medium wave are stated on silicon-base compound substrate inhale
Receive layer；
Described mercury cadmium telluride short-wave absorption layer is Hg1-xCdxTe, wherein x=0.4～0.41；
Described mercury cadmium telluride barrier layer is Hg1-xCdxTe, wherein x=0.5～0.55；
Described mercury cadmium telluride medium wave absorbed layer is Hg1-xCdxTe, wherein x=0.3～0.31.
2. silicon substrate as claimed in claim 1 short/medium wave lamination two-color HgCdTe material it is characterised in that described silicon substrate be combined
Substrate includes from down to up successively：Silicon substrate, the arsenic passivation layer being arranged in order on described silicon substrate, zinc telluridse cushion, with
And cadmium telluride buffer layer.
3. silicon substrate as claimed in claim 1 or 2 short/medium wave lamination two-color HgCdTe material it is characterised in that
Described mercury cadmium telluride short-wave absorption layer is Hg1-xCdxTe, wherein x=0.4；
Described mercury cadmium telluride barrier layer is Hg1-xCdxTe, wherein x=0.5；
Described mercury cadmium telluride medium wave absorbed layer is Hg1-xCdxTe, wherein x=0.3.
4. silicon substrate as claimed in claim 1 or 2 short/medium wave lamination two-color HgCdTe material it is characterised in that
The thickness of described mercury cadmium telluride short-wave absorption layer is 5～6 μm；
The thickness on described mercury cadmium telluride barrier layer is 1.0～1.2 μm；
The thickness of described mercury cadmium telluride medium wave absorbed layer is 4.5～4.8 μm.
5. silicon substrate as claimed in claim 4 short/medium wave lamination two-color HgCdTe material it is characterised in that
The thickness of described mercury cadmium telluride short-wave absorption layer is 5 μm；
The thickness on described mercury cadmium telluride barrier layer is 1.2 μm；
The thickness of described mercury cadmium telluride medium wave absorbed layer is 4.5 μm.
6. the silicon substrate described in any one of Claims 1 to 5 short/preparation method of medium wave lamination two-color HgCdTe material, its feature
It is, comprise the following steps：
Grow arsenic passivation layer, zinc telluridse cushion and cadmium telluride buffer layer successively on a silicon substrate, obtain silicon substrate composite lining
Bottom；
Mercury cadmium telluride short-wave absorption layer, mercury cadmium telluride barrier layer and mercury cadmium telluride medium wave are grown successively on described silicon-base compound substrate absorb
Layer.
7. silicon substrate as claimed in claim 6 short/preparation method of medium wave lamination two-color HgCdTe material it is characterised in that
Mercury cadmium telluride short-wave absorption layer, mercury cadmium telluride barrier layer and mercury cadmium telluride medium wave absorbed layer are grown successively on described silicon-base compound substrate include
Following steps：
By the first standard adjustment Hg source setting, CdTe source, the line in Te source, and the surface temperature of cadmium telluride buffer layer is controlled to protect
Hold in the first preset temperature, so that mercury cadmium telluride short-wave absorption layer to be grown on described cadmium telluride buffer layer；
After the growth of mercury cadmium telluride short-wave absorption layer terminates, the institute closing in addition to Hg source is active, controls the table of cadmium telluride buffer layer
Face temperature is maintained at the second preset temperature, is adjusted to be suitable for the temperature of mercury cadmium telluride barrier growth by the source temperature of CdTe source simultaneously,
After the temperature stabilization of CdTe source temperature and silicon substrate, and the line by the second standard adjustment Hg source, CdTe source and the Te source setting,
So that mercury cadmium telluride barrier layer to be grown on mercury cadmium telluride short-wave absorption layer；
After mercury cadmium telluride barrier growth terminates, the institute closing in addition to Hg source is active, controls the surface temperature of cadmium telluride buffer layer
Degree is maintained at the 3rd preset temperature, is adjusted to be suitable for the temperature of mercury cadmium telluride medium wave absorbed layer growth by the source temperature of CdTe source simultaneously,
After the temperature stabilization of CdTe source temperature and silicon substrate, and the line by the 3rd standard adjustment Hg source, CdTe source and the Te source setting,
So that mercury cadmium telluride medium wave absorbed layer to be grown on mercury cadmium telluride barrier layer.
8. silicon substrate as claimed in claim 6 short/preparation method of medium wave lamination two-color HgCdTe material is it is characterised in that institute
State the second preset temperature higher than the first preset temperature 2～5 degree；Described 3rd preset temperature is lower than the second preset temperature 3～5 degree.
9. silicon substrate as claimed in claim 8 short/preparation method of medium wave lamination two-color HgCdTe material it is characterised in that
Described first standard is：Hg source, CdTe source, the line in Te source are respectively 1.3 × 10-4～1.5 × 10-4Torr、1.1×
10-6～1.3 × 10-6Torr、1.5×10-6Torr；
Described second standard is：Hg source, CdTe source, the line in Te source are respectively 1.3 × 10-4～1.5 × 10-4Torr、1.4×
10-6～1.6 × 10-6Torr、1.5×10-6Torr；
Described second standard is：Hg source, CdTe source, the line in Te source are respectively 1.3 × 10-4～1.5 × 10-4Torr、0.9×
10-6～1.1 × 10-6Torr、1.5×10-6Torr.
10. silicon substrate as claimed in claim 7 short/preparation method of medium wave lamination two-color HgCdTe material is it is characterised in that institute
State and control the surface temperature of cadmium telluride buffer layer to be maintained at the first preset temperature and comprise the following steps：
Before the thickness of described mercury cadmium telluride short-wave absorption layer reaches preset thickness, set by the temperature of mercury cadmium telluride short-wave absorption layer
Determine curve and obtain the temperature value that each moment needs compensate, compensate the surface temperature of cadmium telluride buffer layer according to described temperature value, make
The surface temperature of cadmium telluride buffer layer is maintained at the first preset temperature；
When the thickness of described mercury cadmium telluride short-wave absorption layer reaches preset thickness, the surface temperature of cadmium telluride buffer layer is maintained at
One preset temperature, carries out constant temperature growth；
The described surface temperature controlling cadmium telluride buffer layer is maintained at the 3rd preset temperature and comprises the following steps：
Before the thickness of described mercury cadmium telluride medium wave absorbed layer reaches preset thickness, set by the temperature of mercury cadmium telluride medium wave absorbed layer
Determine curve and obtain the temperature value that each moment needs compensate, cadmium telluride buffer layer surface temperature is compensated according to described temperature value, makes tellurium
The surface temperature of cadmium cushion is maintained at the 3rd preset temperature；
After the thickness of described mercury cadmium telluride medium wave absorbed layer reaches preset thickness, the surface temperature of cadmium telluride buffer layer is maintained at
3rd preset temperature, carries out constant temperature growth.
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| CN112466993A (en) * | 2020-11-18 | 2021-03-09 | 中国电子科技集团公司第十一研究所 | Tellurium-cadmium-mercury infrared detector chip and preparation method thereof |
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| CN206388713U (en) * | 2016-10-14 | 2017-08-08 | 中国电子科技集团公司第十一研究所 | A kind of silicon substrate is short/medium wave lamination two-color HgCdTe material |
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| US5581084A (en) * | 1995-06-07 | 1996-12-03 | Santa Barbara Research Center | Simultaneous two color IR detector having common middle layer metallic contact |
| US6049116A (en) * | 1997-09-13 | 2000-04-11 | Agency For Defense Development | Two-color infrared detector and fabrication method thereof |
| CN103227217A (en) * | 2013-04-09 | 2013-07-31 | 中国电子科技集团公司第十一研究所 | Si-substrate medium/long wave laminated bicolor HgCdTe material and preparation method thereof |
| CN206388713U (en) * | 2016-10-14 | 2017-08-08 | 中国电子科技集团公司第十一研究所 | A kind of silicon substrate is short/medium wave lamination two-color HgCdTe material |
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