CN106356386A - Micro-LED (Micro-light emitting diode) array backlight source-based ink-jet printing quantum dot display device - Google Patents

Micro-LED (Micro-light emitting diode) array backlight source-based ink-jet printing quantum dot display device Download PDF

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Publication number
CN106356386A
CN106356386A CN201610867362.XA CN201610867362A CN106356386A CN 106356386 A CN106356386 A CN 106356386A CN 201610867362 A CN201610867362 A CN 201610867362A CN 106356386 A CN106356386 A CN 106356386A
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micro
quantum dot
led
led chip
green
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CN106356386B (en
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李福山
徐中炜
刘洋
郑聪秀
胡海龙
郭太良
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Fuzhou University
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Fuzhou University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials

Abstract

The invention relates to a Micro-LED (Micro-light emitting diode) array backlight source-based ink-jet printing quantum dot display device, which comprises a Micro-LED substrate, wherein a plurality of RGB (red, green and blue) pixel units arranged in an array are arranged on the Micro-LED substrate; each RGB pixel unit comprises a red quantum dot unit, a green quantum dot unit and a transparent unit; each red quantum dot unit comprises a Micro-LED chip and a red quantum dot material, and the red quantum dot material is excited by blue light emitted by the Micro-LED chip to emit red light; each green quantum dot unit comprises a Micro-LED chip and a green quantum dot material, and the green quantum dot material is excited by blue light emitted by the Micro-LED chip to emit green light; each transparent unit comprises a Micro-LED chip and a transparent material, and the transparent material is used for directly transmitting blue light emitted by the Micro-LED chip; a transparent material for packaging is arranged outside the RGB pixel units. According to the device, an ink-jet printing technology is adopted for film forming of quantum dots, so that the problems of complexity and low yield of an RGB tri-color process for manufacturing a Micro-LED full-color product are solved, and batch operation is realized.

Description

A kind of inkjet printing quantum dot display device based on micro-led array back source
Technical field
The present invention relates to a kind of inkjet printing quantum dot display device based on micro-led array back source.
Background technology
Quantum dot qds is a kind of semiconductor nanoparticle elementary composition by ii-vi or iii-v race, and it typically has a size of Several nanometers to tens nanometer.Quanta point material, due to the presence of quantum confined effect, continuously can become discrete by band originally Level structure, visible ray can be launched after being excited by the external world.Quanta point material due to its glow peak have less halfwidth and Glow color can be adjusted by the size of quanta point material, structure or composition, apply and will lift color in display field Saturation and colour gamut.
The performance of micro led advantage it is obvious that it inherits the high efficiency of inorganic led, high brightness, high-reliability and anti- Between seasonable fast the features such as, more energy-conservation, mechanism be simple, small volume, the advantage such as slim.Micro led also has the big characteristic to be exactly Resolution superelevation.Because ultra micro is little, the resolution of performance is especially high and brightness that have longer luminescent lifetime and Geng Gao and There is preferably stability of material, life-span length, askiatic branding.But micro led is intended on a piece of display Embed millions of micro color led, yields is poor instantly, the especially more monochromatic difficulty of 3 color led of rgb is higher: monochromatic Micro led array encapsulated by inverted structure and drive ic laminating it is achieved that but rgb array need to be posted by several times red, Blue, green trichroism crystal grain, needs embedded hundreds of thousands led crystal grain, requires for led crystal grain light efficiency, the concordance of wavelength, yield Higher, the cost payout with time-division bin is also the technical bottleneck hindering volume production.
Content of the invention
In view of this, it is an object of the invention to provide a kind of inkjet printing amount based on micro-led array back source Son point display device, carries out film forming using inkjet technology, solves micro-led full-color production rgb to quantum dot The low problem of three color process complexity yield rate, and achieve large batch of operation.
For achieving the above object, the present invention adopts the following technical scheme that a kind of spray based on micro-led array back source Ink print quantum dot display device it is characterised in that: include a micro-led substrate, described micro-led substrate is provided with Some rgb pixel cells by array arrangement, every rgb pixel cell includes a red quantum dot element, a green quantum dot Unit and a transparent cell；Described red quantum dot element includes micro-led chip and is coated on above micro-led chip Red quantum dot material, described red quantum dot material excites through the blue light that micro-led chip sends and sends HONGGUANG；Institute State the green quanta point material that green quantum dot element includes micro-led chip and is coated on above micro-led chip, institute State green quanta point material to excite through the blue light that micro-led chip sends and send green glow；Described transparent cell includes Micro-led chip is used for being directed through with the transparent material being coated on above micro-led chip, described transparent material The blue light that micro-led chip sends；It is provided with transparent material outside described rgb pixel cell to be used for encapsulating.
Further, described red quantum dot material, green quanta point material and transparent material form through inkjet printing.
Further, the specifically comprising the following steps that of described inkjet printing
Step s1: set up the three of micro-led substrate, the rgb pixel cell by array arrangement and the transparent material for encapsulation Dimension word model；
Step s2: described three-dimensional digital model is input in ink-jet printer program, described ink-jet printer program is according to institute State quanta point material and the shape that three-dimensional digital model draws on two dimensional surface, some mini sprinklers on design printhead and printhead Interior quanta point material, micro- starting point spraying print, printing path and micro- cut-off point spraying print；
Step s3: after loading corresponding quanta point material in mini sprinkler, according to micro- starting point spraying print, printing path and micro- The cut-off point spraying print carries out inkjet printing；
Step s4: after the completion of inkjet printing, the material of cleaning device excess surface.
Further, described red quantum dot material is mixed by-race or-race's quanta point material.
Further, described green quanta point material is mixed by-race or-race's quanta point material.
Further, it is spaced apart 5～30 μm between described micro-led chip.
The present invention compared with prior art has the advantages that present invention, avoiding trichroism led processing technology produces On difficulty, effectively increase yields；The present invention by the way of inkjet printing film forming, can flexible design dot structure, dive Improve the display performance of panel.
Brief description
Fig. 1 is the apparatus structure front view of one embodiment of the invention.
Fig. 2 is the a-a sectional view of Fig. 1 of the present invention.
Fig. 3 is the print head structure schematic diagram of one embodiment of the invention.
In figure: 210- printhead；220- mini sprinkler；310- red quantum dot element；320- green quantum dot element；330- Transparent cell；410th, 420,430-micro-led chip；411- red quantum dot material；421- green quanta point material；431、 460- transparent material；470-micro-led substrate.
Specific embodiment
Below in conjunction with the accompanying drawings and embodiment the present invention will be further described.
Refer to Fig. 1 and Fig. 2, the present invention provides a kind of inkjet printing quantum dot based on micro-led array back source Display device it is characterised in that: include a micro-led substrate 470, described micro-led substrate 470 is provided with some by The rgb pixel cell of array arrangement, is the array of 5 row 2 row in the present embodiment, and every rgb pixel cell includes a red quantum The green quantum dot element 320 of dot element 310, one and a transparent cell 330；Described red quantum dot element 310 includes micro- Led chip 410 and the red quantum dot material 411 being coated on micro-led chip 410 top, described red quantum dot material 411 excite through the blue light that micro-led chip 410 sends and send HONGGUANG；Described green quantum dot element 320 includes micro- Led chip 420 and the green quanta point material 421 being coated on micro-led chip 420 top, described green quanta point material 421 excite through the blue light that micro-led chip 420 sends and send green glow；Described transparent cell 330 includes micro-led core Piece 430 and the transparent material 431 being coated on micro-led chip 430 top, described transparent material 431 is used for being directed through The blue light that micro-led chip 430 sends；It is provided with transparent material 460 outside described rgb pixel cell to be used for encapsulating.In reality In manufacturing process, transparent material 431 can be not provided with, directly the transparent material 460 being used for encapsulating is arranged at micro-led chip 430 upper surface.
In the present embodiment, described red quantum dot material is mixed by-race or-race's quanta point material； Described green quanta point material is also mixed by-race or-race's quanta point material；Described red quantum dot material, Green quanta point material and transparent material form through inkjet printing, specifically comprise the following steps that
Step s1: set up the three of micro-led substrate, the rgb pixel cell by array arrangement and the transparent material for encapsulation Dimension word model；
Step s2: described three-dimensional digital model is input in ink-jet printer program, described ink-jet printer program is according to institute State quanta point material and the shape that three-dimensional digital model draws on two dimensional surface, some mini sprinklers on design printhead and printhead Interior quanta point material, micro- starting point spraying print, printing path and micro- cut-off point spraying print；Refer to Fig. 3, the present embodiment Include 6 mini sprinklers be arrangeding in parallel 220 in middle one printhead of design 210, be filled with red quantum point from left to right successively Material, green quanta point material, transparent material, red quantum dot material, green quanta point material, transparent material, through this printing Head carries out inkjet printing and forms Fig. 1, the array arrangement shown in 2.
Step s3: after loading corresponding quanta point material in mini sprinkler, according to micro- starting point spraying print, printing path Carry out inkjet printing with micro- cut-off point spraying print, print thickness is between 1～200nm；
Step s4: after the completion of inkjet printing, the material of cleaning device excess surface.
Further, it is spaced apart 5～30 μm between described micro-led chip.
The foregoing is only presently preferred embodiments of the present invention, all impartial changes done according to scope of the present invention patent with Modify, all should belong to the covering scope of the present invention.

Claims (6)

1. a kind of inkjet printing quantum dot display device based on micro-led array back source it is characterised in that: include one Micro-led substrate, described micro-led substrate is provided with some rgb pixel cells by array arrangement, every rgb picture Plain unit includes a red quantum dot element, a green quantum dot element and a transparent cell；Described red quantum dot element bag The red quantum dot material including micro-led chip and being coated on above micro-led chip, described red quantum dot material warp The blue light that micro-led chip sends excites and sends HONGGUANG；Described green quantum dot element includes micro-led chip and painting It is overlying on the green quanta point material above micro-led chip, described green quanta point material sends through micro-led chip Blue light excites and sends green glow；Described transparent cell includes micro-led chip and is coated on saturating above micro-led chip Bright material, described transparent material is used for being directed through the blue light that micro-led chip sends；Arrange outside described rgb pixel cell Transparent material is had to be used for encapsulating.
2. the inkjet printing quantum dot display device based on micro-led array back source according to claim 1, it is special Levy and be: described red quantum dot material, green quanta point material and transparent material form through inkjet printing.
3. the inkjet printing quantum dot display device based on micro-led array back source according to claim 2, it is special Levy and be: the specifically comprising the following steps that of described inkjet printing
Step s1: set up the three of micro-led substrate, the rgb pixel cell by array arrangement and the transparent material for encapsulation Dimension word model；
Step s2: described three-dimensional digital model is input in ink-jet printer program, described ink-jet printer program is according to institute State quanta point material and the shape that three-dimensional digital model draws on two dimensional surface, some mini sprinklers on design printhead and printhead Interior quanta point material, micro- starting point spraying print, printing path and micro- cut-off point spraying print；
Step s3: after loading corresponding quanta point material in mini sprinkler, according to micro- starting point spraying print, printing path and micro- The cut-off point spraying print carries out inkjet printing；
Step s4: after the completion of inkjet printing, the material of cleaning device excess surface.
4. the inkjet printing quantum dot display device based on micro-led array back source according to claim 1, it is special Levy and be: described red quantum dot material is mixed by-race or-race's quanta point material.
5. the inkjet printing quantum dot display device based on micro-led array back source according to claim 1, it is special Levy and be: described green quanta point material is mixed by-race or-race's quanta point material.
6. the inkjet printing quantum dot display device based on micro-led array back source according to claim 1, it is special Levy and be: between described micro-led chip, be spaced apart 5～30 μm.
CN201610867362.XA 2016-09-30 2016-09-30 A kind of inkjet printing quantum dot display device based on Micro-LED array back source Active CN106356386B (en)

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CN106898628A (en) * 2017-04-28 2017-06-27 深圳市华星光电技术有限公司 Led display panel
CN106935608A (en) * 2017-02-27 2017-07-07 深圳市华星光电技术有限公司 Micro- LED array substrate and display panel
CN107068707A (en) * 2017-06-13 2017-08-18 深圳市华星光电技术有限公司 Micro LED chromatic displays
CN107393938A (en) * 2017-08-12 2017-11-24 左洪波 Micro LED blue light display screen method for packing
CN107422529A (en) * 2017-08-04 2017-12-01 纳晶科技股份有限公司 Back light unit and the display device for including it
CN107437531A (en) * 2017-07-25 2017-12-05 深圳市华星光电半导体显示技术有限公司 Make color M icro LED method, display module and terminal
CN108183159A (en) * 2017-11-17 2018-06-19 广州市香港科大***研究院 A kind of micro- light emitting diode, micro- active display structure of arrays and packaging method
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CN108321170A (en) * 2018-01-16 2018-07-24 南方科技大学 A kind of production method of high efficiency light conversion chromatic display pixel film
CN108615742A (en) * 2018-07-10 2018-10-02 南方科技大学 A kind of display panel production method, display panel and display device
CN108878469A (en) * 2018-07-04 2018-11-23 南京大学 Mixed type RGB micron openings LED array device based on III nitride semiconductor quantum dot and preparation method thereof
CN108899332A (en) * 2018-07-17 2018-11-27 南方科技大学 A kind of Micro-LED display panel and its manufacturing method
CN109166876A (en) * 2018-09-12 2019-01-08 京东方科技集团股份有限公司 micro-display device and preparation method thereof
US10276756B2 (en) 2017-04-28 2019-04-30 Shenzhen China Star Optoelectronics Technology Co., Ltd LED display panel
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CN110783359A (en) * 2018-07-31 2020-02-11 深圳Tcl新技术有限公司 Quantum dot LED display panel and manufacturing method thereof
US10559727B2 (en) * 2017-07-25 2020-02-11 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Manufacturing method of colorful Micro-LED, display modlue and terminals
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CN112687821A (en) * 2021-01-20 2021-04-20 福州大学 Quantum dot intelligent lighting QLED device and preparation method thereof
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