CN106353970B - Light source polarizes optimization method and light source-exposure mask-polarization optimization method - Google Patents
Light source polarizes optimization method and light source-exposure mask-polarization optimization method Download PDFInfo
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- CN106353970B CN106353970B CN201510418311.4A CN201510418311A CN106353970B CN 106353970 B CN106353970 B CN 106353970B CN 201510418311 A CN201510418311 A CN 201510418311A CN 106353970 B CN106353970 B CN 106353970B
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Abstract
The present invention provides a kind of light source polarization optimization method and light source-exposure mask-polarization optimization method.The light source polarization optimization method includes: that light source is divided into multiple source blocks；Set that there are multiple polarization states for each source block；Multiple polarization states based on each of set source block calculate all polarization configurations of the light source；All polarization configurations are tested on resolution chart；And selecting optimal polarization to configure the final polarization configurations as the light source based on the test, the optimal polarization configuration pin has maximum process window to the resolution chart.Light source polarization optimization method provided by the present invention can be implemented after implementing light source-exposure mask optimization, to realize effective light source-exposure mask-polarization optimization, to greatly improve the quality of optical patterning.
Description
Technical field
The present invention relates to technical field of semiconductors, polarize optimization method and light source-exposure mask-in particular to a kind of light source
Polarization optimization (source-mask-polarization optimization) method.
Background technique
As the complexity of integrated circuit is higher and higher, characteristic size also becomes smaller and smaller.When the feature of integrated circuit
Be closely sized to the system limits of photo-etching machine exposal, i.e., when characteristic size is close to or smaller than photolithography light source, the version that is produced on silicon wafer
Figure will appear apparent distortion.Lithography system must use RET thus, to improve image quality.
As technology develops toward the smaller direction of critical size, only implement the normal optical of optimization to exposure mask adjacent to amendment
(Optical Proximity Correction, OPC) may be unable to satisfy the specification requirement of increasingly strict critical size.?
In this case, irradiation source/light source can also be optimized, to improve photoetching fidelity, i.e. progress light source-exposure mask optimization
(SMO).However, SMO is not still able to satisfy the specification requirement of increasingly strict critical size and needs to further increase light sometimes
Etching system imaging resolution.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of light source polarization optimization method, and the light source polarizes optimization side
Method includes: that light source is divided into multiple source blocks (panel)；Set that there are multiple polarization states for each source block；Based on institute
Multiple polarization states that the source block each of is arranged calculate all polarization configurations of the light source；Institute is tested on resolution chart
State all polarization configurations；And optimal polarization is selected to configure the final polarization configurations as the light source, institute based on the test
Stating optimal polarization configuration pin has maximum process window (process window, PW) to the resolution chart.
It is in one embodiment of the invention, described that light source is divided into multiple source blocks includes that light source is divided into four source blocks.
In one embodiment of the invention, described to set each source block to have multiple polarization states including inciting somebody to action
Each source block is set as tool, and there are four polarization states.
In one embodiment of the invention, four polarization states include along the polarization state of horizontal axis, along perpendicular
D-axis to polarization state and along about horizontal axis at the polarization state in the direction of positive/negative predetermined angular.
In one embodiment of the invention, the predetermined angular is 45 degree.
In one embodiment of the invention, the light source includes 256 polarization configurations altogether.
In one embodiment of the invention, the light source is optimized light source.
In one embodiment of the invention, the polarization state is H mode (TE) mode.
In one embodiment of the invention, light source polarization optimization method can be applied to 28 nanometers and its below
Process node.
The present invention also provides a kind of light source-exposure mask-polarization optimization method, the light source-exposure mask-polarization optimization method packet
It includes: after implementing light source-exposure mask optimization, implementing the light source as described in any one of claim 1-9 and polarize optimization method.
Light source polarization optimization method provided by the present invention can be implemented after implementing light source-exposure mask optimization, to realize
Effective light source-exposure mask-polarization optimization, to greatly improve the quality of optical patterning.
Detailed description of the invention
Following drawings of the invention is incorporated herein as part of the present invention for the purpose of understanding the present invention.Shown in the drawings of this hair
Bright embodiment and its description, principle used to explain the present invention.
In attached drawing:
Fig. 1 shows the flow chart of light source polarization optimization method according to an embodiment of the present invention；
Fig. 2 shows the schematic diagrames of light source according to an embodiment of the present invention polarization optimization；And
Fig. 3 shows light source-exposure mask according to an embodiment of the present invention-polarization optimization schematic diagram.
Specific embodiment
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid confusion with the present invention, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.On the contrary, provide these embodiments will make it is open thoroughly and completely, and will fully convey the scope of the invention to
Those skilled in the art.
The purpose of term as used herein is only that description specific embodiment and not as limitation of the invention.Make herein
Used time, " one " of singular, "one" and " described/should " be also intended to include plural form, unless the context clearly indicates separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related listed item and institute
There is combination.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Illustrate technical solution proposed by the present invention.Presently preferred embodiments of the present invention is described in detail as follows, however in addition to these detailed descriptions
Outside, the present invention can also have other embodiments.
In the current generation, the research of light source-exposure mask optimization (source-mask optimization, SMO) mainly for
1x process node.Light source-exposure mask-polarization optimization (SMPO) is a kind of more advanced photoetching resolution enhancing technology, and SMPO exists
Polarization state variable is introduced in SMO, increases optimization freedom degree, using the interaction between light source, exposure mask and polarization state, is led to
The change intensity of light source, light source electric vector deflection and exposure mask topological structure are crossed, achievees the purpose that improve optical patterning quality.So
And current SMPO lacks a kind of method for implementing SMPO still in theoretical research stage.
The present invention provides a kind of light sources to polarize optimization method.Fig. 1 shows light source polarization according to an embodiment of the present invention
The flow chart of optimization method 100.As shown in Figure 1, light source polarization optimization method 100 the following steps are included:
Step 101: light source is divided into multiple source blocks.Lithographic equipment generally includes irradiation system.Illuminator, which receives, comes from light
The radiation in source (such as laser), and generate irradiation beam and form device for irradiation patterns.In common illuminator, beam quilt
Shaping and controlling into makes the beam at pupil plane have desired spatial intensity distribution, also referred to as irradiation mode.Irradiation mode
The example of type has conventional, bipolar, asymmetric, quadrupole, sextupole and annular illumination mode.Can be based on irradiation mode will
Light source is divided into multiple source blocks.For example, in one embodiment, light source is quadrupole irradiation mode, light source can be divided into four sources
Light source is divided into four source blocks, respectively A, B, C and D as shown in Figure 2 by block.
Step 102: setting each source block to there are multiple polarization states.The beam can be partially in a step 101
Vibration, the beam correctly polarized can be improved picture contrast and/or improve exposure latitude.The example continued the above, can be with
Each source block (such as A, B, C and D in Fig. 2) is respectively set to have multiple polarization states.It in one embodiment, can be with
Tool is set there are four polarization state by each source block, which for example can be along horizontal axis (such as x-axis)
Polarization state, along vertical axial direction (such as y-axis) polarization state and along about horizontal axis (such as x-axis) at positive/negative pre-
Determine the polarization state in the direction of angle.Wherein, predetermined angular for example can be set to 45 degree.As shown in Figure 2, for four
Source block A, B, C and D, there are four polarization states for each source block tool, respectively along x-axis, along y-axis and along about x-axis at positive/negative 45
Spend the polarization state in the direction at angle.These polarization states can be for example TE mode.
Step 103: multiple polarization states based on set each source block calculate all polarization configurations of light source.It is based on
Multiple polarization states in step 102 can calculate all polarization configurations of light source.The example continued the above, shown in Fig. 2
Each of four source blocks A, B, C and D source block be respectively provided with along x-axis, along y-axis and along about x-axis at positive/negative 45 degree of angles
Direction four polarization states, therefore can calculate the entire light source including source block A, B, C and D include altogether 256 polarization
Configuration.
Step 104: all polarization configurations are tested on resolution chart.After calculating all polarization configurations of light source,
It can be tested, to obtain the polarization configurations that can most improve photoetching quality.
Step 105: selecting optimal polarization to configure the final polarization configurations as light source, optimal polarization configuration based on the test
There is maximum process window for resolution chart.Test based on step 104 can therefrom select optimal polarization configurations.Most
Good polarization configurations can be for example the polarization configurations for resolution chart with maximum process window.By selected polarization configurations
As the final polarization configurations of light source, that is, realize light source polarization optimization.
According to an embodiment of the invention, the light source in above-mentioned light source polarization optimization method can be optimized light source.Example
If above-mentioned light source polarization optimization method can be the method implemented after implementing light source-exposure mask optimization, i.e., above-mentioned light source polarization
Light source in optimization method is the light source of after light source-exposure mask optimization (post-SMO).In this manner it is achieved that effective light
Source-exposure mask-polarization optimization, goes out as shown in Figure 3.Therefore, the above method can greatly improve the quality of optical patterning, can
Meet the specification requirement of increasingly strict critical size, such as can be applied to 28 nanometers and its process node below.
The present invention also provides a kind of light source-exposure mask-polarization optimization method, the light source-exposure masks-polarization optimization method packet
It includes: after implementing light source-exposure mask optimization, implementing above-mentioned light source polarization optimization method.This method can effectively implement light source-and cover
Film-polarization optimization, greatly improves the quality of optical patterning.
The present invention has been explained by the above embodiments, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, is not intended to limit the invention to the scope of the described embodiments.Furthermore those skilled in the art
It is understood that the present invention is not limited to the above embodiments, introduction according to the present invention can also be made more kinds of member
Variants and modifications, all fall within the scope of the claimed invention for these variants and modifications.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (10)
1. a kind of light source polarizes optimization method, which is characterized in that the light source polarizes optimization method and includes:
Light source is divided into multiple source blocks；
Set that there are multiple polarization states for each source block；
Multiple polarization states based on each of set source block calculate all polarization configurations of the light source, each source block
The group of either polarization state is combined into a kind of polarization configurations；
All polarization configurations are tested on resolution chart；And
Optimal polarization is selected to configure the final polarization configurations as the light source, the optimal polarization configuration pin based on the test
There is maximum process window to the resolution chart.
2. light source as described in claim 1 polarizes optimization method, which is characterized in that described light source is divided into multiple source blocks to include
Light source is divided into four source blocks.
3. light source as described in claim 1 polarizes optimization method, which is characterized in that described to be set as having by each source block
Having multiple polarization states includes setting each source block to polarization state there are four tools.
4. light source as claimed in claim 3 polarizes optimization method, which is characterized in that four polarization states include along level
Axial polarization state, along vertical axial polarization state and along the direction about horizontal axis at positive/negative predetermined angular
Polarization state.
5. light source as claimed in claim 4 polarizes optimization method, which is characterized in that the predetermined angular is 45 degree.
6. light source as claimed in claim 4 polarizes optimization method, which is characterized in that the light source includes that 256 polarizations are matched altogether
It sets.
7. light source as described in claim 1 polarizes optimization method, which is characterized in that the light source is optimized light source.
8. light source as described in any one of claim 1-7 polarizes optimization method, which is characterized in that the polarization state is
H mode mode.
9. the light source as described in any one of claim 1-7 polarizes optimization method, which is characterized in that the method can answer
For 28 nanometers and its process node below.
10. a kind of light source-exposure mask-polarization optimization method, which is characterized in that the light source-exposure mask-polarization optimization method includes:
After implementing light source-exposure mask optimization, implements the light source as described in any one of claim 1-9 and polarize optimization method.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101720450A (en) * | 2008-04-16 | 2010-06-02 | 新思科技有限公司 | Modeling a sector-polarized-illumination source in an optical lithography system |
| CN102411263A (en) * | 2010-09-23 | 2012-04-11 | Asml荷兰有限公司 | Source polarization optimization |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7090964B2 (en) * | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101720450A (en) * | 2008-04-16 | 2010-06-02 | 新思科技有限公司 | Modeling a sector-polarized-illumination source in an optical lithography system |
| CN102411263A (en) * | 2010-09-23 | 2012-04-11 | Asml荷兰有限公司 | Source polarization optimization |
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