CN106353785A - Sensor and detector on basis of avalanche photodiodes - Google Patents
Sensor and detector on basis of avalanche photodiodes Download PDFInfo
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- CN106353785A CN106353785A CN201610804590.2A CN201610804590A CN106353785A CN 106353785 A CN106353785 A CN 106353785A CN 201610804590 A CN201610804590 A CN 201610804590A CN 106353785 A CN106353785 A CN 106353785A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
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Abstract
The invention relates to a sensor and a detector on the basis of avalanche photodiodes. The sensor comprises a plurality of APD (avalanche photodiode) sensors. The multiple APD sensors are parallelly sequentially stacked on one another and include single-tube APD sensors or array APD sensors. The detector comprises the sensor and a multi-channel reading circuit. The multi-channel reading circuit comprises current-to-voltage amplification modules and baseline restoration modules, is electrically coupled with the sensor and is used for reading out current signals outputted by the sensor. The sensor and the detector have the advantages that the sensor is configured with the multiple APD sensors which are parallelly sequentially stacked on one another, and accordingly the sensor and the detector are high in quantum efficiency under the condition of sub-nanosecond time resolution; the detector is configured with the multi-channel reading circuit, weak signals outputted by the APD sensors can be read out, the APD sensors can be effectively matched with one another, accordingly, the time resolution performance of the APD detector can be improved, and the integration level of the APD detector can be upgraded.
Description
Technical field
It relates to nuclear detection technology and nuclear electronics field, it is based on avalanche optoelectronic two pole in particular to a kind of
The sensor of pipe and detector.
Background technology
High time resolution, high-quantum efficiency detectors for synchrotron radiation are the important key technologies that third generation light source is urgently broken through
One of, domestic and international research institution is all in the research actively developing time resolution detector that increases input.Based on avalanche optoelectronic two pole
The detector of pipe (apd) can carry out direct detection to x-ray, and has high count rate, high saturation, Larger Dynamic scope
Feature while, there is nanosecond or faster time resolution again.Apd detector be currently the ultrafast x-ray time divide
Distinguish the most frequently used detector in experiment, improve its time resolution further and quantum efficiency has become the heat in detector field
Point research topic.For example, when apd detector is applied to the isotopic resonant inelastic scattering of core (nrs) experiment, can be given
The dynamic behavior that nucleic atom is interacted with surrounding coordination atom；When apd detector, to be applied to x-ray off-resonance non-resilient
During scattering (ixs) experiment, the phonon spectra of momentum resolution can be obtained；When apd detector is applied to pump-probe experiment, lead to
Cross the response diagram that the signal measurement at difference Fixed Time Interval point after controlling reaction to start finally is spliced into full time process
Picture.
At present, in the world European synchronous radiating light source (esrf), Japanese Synchrotron Radiation (spring-8, kek) with beautiful
State's Synchrotron Radiation (bnl, aps) etc. has all carried out the correlational study work of time resolution apd detector, and achieves plentiful and substantial
Achievement in research.Although the research to time resolution apd detector achieves progress, but still comes with some shortcomings: (1) is existing
Apd detector is being realized in the case that sub-nanosecond temporal is differentiated it is impossible to realize high-quantum efficiency simultaneously, thus significantly reducing
Conventional efficient.The most frequently used core isotope in nrs test57The nuclear resonance level of fe is 14.4kev, and these detectors are to this energy x
The maximum of ray photons efficiency is only 25%；(2) reading circuit of existing apd detector is using commercial plug-in unit or using discrete
Element is constituted so that reading circuit can not mesh well into apd sensor, thus reducing the overall performance of apd detector, and
And it is unfavorable for the system integration.
Accordingly, it would be desirable to a kind of new sensor and detector, differentiated and high-quantum efficiency with realizing sub-nanosecond temporal.
It should be noted that information is only used for strengthening the reason of background of this disclosure disclosed in above-mentioned background section
Solution, therefore can include not constituting the information to prior art known to persons of ordinary skill in the art.
Content of the invention
The purpose of the disclosure is to provide a kind of sensor based on avalanche photodide and detector, is capable of Asia
Nanoseconds are differentiated and high-quantum efficiency.
According to an aspect of this disclosure, provide a kind of sensor based on avalanche photodide, comprising:
Multiple apd sensors, the order stacking setting in parallel relationship of the plurality of apd sensor,
Wherein, the plurality of apd sensor includes single tube apd sensor or array apd sensor.
In a kind of exemplary embodiment of the disclosure, described single tube apd sensor includes apd nude film, printed circuit board (PCB)
And metab, described metab has holding area,
Wherein, described apd nude film is arranged on the printed circuit board, and described printed circuit board (PCB) is arranged on described gold
Belong in the holding area of base.
In a kind of exemplary embodiment of the disclosure, the anode that described apd nude film includes being arranged on its first surface connects
Touch the cathode contacts of the second surface relative with described first surface with being arranged on it, described positive contact passes through conducting resinl and institute
State negative electrode pin on printed circuit board (PCB) to connect, described cathode contacts by way of wire bonding with described printed circuit board (PCB)
Negative electrode pin connects.
In a kind of exemplary embodiment of the disclosure, the lower surface of described apd nude film includes and described printed circuit board (PCB)
The contact portion coupling, described printed circuit board (PCB) and described metab naked with the described apd in addition to described contact portion
The corresponding part of lower surface of piece is removed.
In a kind of exemplary embodiment of the disclosure, the both sides of the described holding area of described metab are provided with admittedly
Determine hole, described fixing hole is used for the plurality of apd sensor is fixed together.
In a kind of exemplary embodiment of the disclosure, the thickness of described absorbed layer accounts for the gross thickness of described photosensitive bodies
More than 90%.
According to an aspect of this disclosure, provide a kind of detector based on avalanche photodide, comprising:
Sensor as described in above-mentioned any one；
Multichannel reading circuit, described multichannel reading circuit and described sensor electric coupling, for reading described sensing
The current signal of device output.
In a kind of exemplary embodiment of the disclosure, described multichannel reading circuit includes electric current and turns voltage amplification mould
Block, described electric current turn voltage amplification module for receive be derived from described sensor described current signal, to described current signal
It is amplified, turns voltage and process and obtain voltage signal, and described voltage signal is amplified and exports.
In a kind of exemplary embodiment of the disclosure, described multichannel reading circuit also includes baseline restorer module, institute
State baseline restorer module for receive the signal that voltage amplification module exports is turned by described electric current, and according to received letter
Number turning the output of voltage amplification module with the comparative result of reference voltage to described electric current adjusts current signal.
According to some embodiments of the present disclosure, by configuring multiple apd of order stacking setting in parallel relationship
Sensor, in the case of can differentiating realizing sub-nanosecond temporal, realizes high-quantum efficiency simultaneously.
According to some embodiments of the present disclosure, by configuring multichannel reading circuit, preferably mate apd sensor, from
And improve time resolution performance and the integrated level of apd sensor.
According to some embodiments of the present disclosure, by multichannel reading circuit is configured to turn voltage amplification mould including electric current
Block, can read the small-signal of apd sensor output.
According to some embodiments of the present disclosure, lost by the direct current that baseline restorer module eliminates galvo-preamplifier
Adjust it is ensured that the accurate examination of photogenerated signals.
It should be appreciated that above general description and detailed description hereinafter are only exemplary and explanatory, not
The disclosure can be limited.
Brief description
Accompanying drawing herein is merged in description and constitutes the part of this specification, shows the enforcement meeting the disclosure
Example, and be used for explaining the principle of the disclosure together with description.It should be evident that drawings in the following description are only the disclosure
Some embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
These accompanying drawings obtain other accompanying drawings.In the accompanying drawings:
Fig. 1 diagrammatically illustrates the theory diagram of apd detector according to an illustrative embodiment of the invention；
Fig. 2 diagrammatically illustrates the structure chart of apd detector according to an illustrative embodiment of the invention；
(a), (b) and (c) of Fig. 3 diagrammatically illustrates single tube apd according to an illustrative embodiment of the invention respectively
The front view of sensor, dorsal view and the cross-sectional perspective view along pp ' line；
(a), (b) and (c) of Fig. 4 diagrammatically illustrates stack according to an illustrative embodiment of the invention respectively
The front view of apd sensor, dorsal view and the cross-sectional perspective view along pp ' line；
Fig. 5 diagrammatically illustrates the structure chart of apd nude film according to an illustrative embodiment of the invention；
It is extensive with baseline that the electric current that Fig. 6 diagrammatically illustrates according to an illustrative embodiment of the invention turns voltage amplification module
The structure chart of multiple module；
The high speed that Fig. 7 diagrammatically illustrates according to an illustrative embodiment of the invention screens the structure chart of module；
Fig. 8 diagrammatically illustrates the structure chart of lvds output module according to an illustrative embodiment of the invention.
Specific embodiment
It is described more fully with example embodiment referring now to accompanying drawing.However, example embodiment can be with multiple shapes
Formula is implemented, and is not understood as limited to example set forth herein；On the contrary, these embodiments are provided so that the disclosure will more
Fully and completely, and by the design of example embodiment comprehensively convey to those skilled in the art.Described feature, knot
Structure or characteristic can combine in one or more embodiments in any suitable manner.In the following description, provide perhaps
Many details are thus provide fully understanding of embodiment of this disclosure.It will be appreciated, however, by one skilled in the art that can
Omit one of described specific detail or more to put into practice the technical scheme of the disclosure, or other sides can be adopted
Method, constituent element, device, step etc..In other cases, be not shown in detail or describe known solution a presumptuous guest usurps the role of the host avoiding and
The each side making the disclosure thicken.
Additionally, accompanying drawing is only the schematic illustrations of the disclosure, it is not necessarily drawn to scale.In figure identical accompanying drawing mark
Note represents same or similar part, thus will omit repetition thereof.Some block diagrams shown in accompanying drawing are work(
Energy entity, not necessarily must be corresponding with physically or logically independent entity.These work(can be realized using software form
Energy entity, or realize these functional entitys in one or more hardware modules or integrated circuit, or at heterogeneous networks and/or place
These functional entitys are realized in reason device device and/or microcontroller device.
Fig. 1 diagrammatically illustrates the theory diagram of apd detector according to an illustrative embodiment of the invention.
With reference to Fig. 1, the detector based on avalanche photodide according to an illustrative embodiment of the invention can wrap
Include stack apd sensor 100 and multichannel reading circuit 200.
Stack apd sensor 100 can be used for for x-ray being converted into the signal of telecommunication.Stack apd sensor 100 is permissible
There is single tube or array apd sensor, described n single tube or the battle array of relatively thin absorbed layer including n (n is greater than 1 positive integer)
The order stacking setting in parallel relationship of row apd sensor.Because time resolution performance is by single tube or array apd sensor
Absorber thickness determine, and quantum efficiency is then by the overall absorption thickness degree decision of n sensor, so in a stacked fashion
The apd sensor of configuration realizes high-quantum efficiency while can differentiating obtaining sub-nanosecond temporal, and then can improve experiment
Efficiency.
According to other embodiment, for the apd sensor of stacking absorbed layer account for the 90% of whole thickness of detector with
On, absorber thickness is almost equal with the thickness of device, thus eliminating the absorption to x-ray for the backing material.
Multichannel reading circuit 200 can be used for reading the small-signal of stack apd sensor output.The quantity of passage
Determined by stack apd sensor 100, if stack apd sensor 100, the quantity of passage are constituted using n single tube
For n；If being the apd sensor of a × b using n array size, the quantity of passage is n × (a × b).
According to other embodiment, each passage can include one and screen at a high speed module and a low-voltage differential signal
(lvds) output module, but the invention is not restricted to this.
According to other embodiment, each passage can also include an electric current and turn voltage module.For example, using upset electricity
Pressure follower constitutes the input stage that electric current turns voltage module, in the case of ensureing that bandwidth is constant, reduces reading noise.Separately
Outward, preamplifier increases multiple amplifiers, can further improve signal to noise ratio.
According to other embodiment, can be with Configuration baseline recovery module, with steady baseline voltage and eliminate front storing
The DC maladjustment of big device.
According to other embodiment, combined sluggish former using the structure of low gain, high bandwidth prime amplifier multi-stage cascade
Reason, realize at a high speed, in high precision, sluggish screen module.
According to other embodiment, lvds output module is constituted with off chip resistor using open-drain differential pair, flexibly
Convenient.
According to embodiments of the invention, reading circuit is designed according to the characteristic of stack apd sensor, each reads logical
Road all can mesh well into corresponding apd sensor, to realize high speed, the low characteristic reading noise, also improve simultaneously
The integrated level of whole detector.
Fig. 2 diagrammatically illustrates the structure chart of apd detector according to an illustrative embodiment of the invention.
With reference to Fig. 2, in this illustrative embodiments, stack apd sensor 100 can be by 8 single tube apd sensors
110 compositions, but the invention is not restricted to this, stack apd sensor 100 can also be by more or less of multiple single tubes or battle array
Row apd sensor is constituted.
As shown in Fig. 28 single tube apd sensor orders are stacked.Time resolution performance is by single tube apd sensor
Absorber thickness determine, realize high-quantum efficiency while therefore can differentiating obtaining sub-nanosecond temporal, and then improve real
Test efficiency.
Corresponding to 8 single tube apd sensors 110, multichannel reading circuit 200 includes 8 passages, and respectively ch1 is extremely
ch8.As it was previously stated, each of ch1 to ch8 passage reading circuit may each comprise an electric current turns voltage amplification module 210,
One baseline restorer module 220, one screens module 230 and a lvds output module 240 at a high speed, but the invention is not restricted to this.
(a), (b) and (c) of Fig. 3 diagrammatically illustrates single tube apd according to an illustrative embodiment of the invention respectively
The front view of sensor, dorsal view and the cross-sectional perspective view along pp ' line.
As shown in figure 3, single tube apd sensor 110 can include apd nude film 111, printed circuit board (PCB) (pcb) 112 and metal
Base 113.
According to example embodiment, apd nude film 111 is arranged on printed circuit board (PCB) 112, for example, can be incited somebody to action by conducting resinl
Apd nude film 111 sticks on printed circuit board (PCB) 112.But the invention is not restricted to this, can be by other means by apd nude film 111
It is arranged on printed circuit board (PCB) 112, in this illustrative embodiments, this is not done with particular determination.
According to example embodiment, apd nude film 111 can include having the first surface of positive contact, and (that is, in Fig. 3, apd is naked
The lower surface of piece 111) and there is the second surface upper surface of apd nude film 111 (that is, in Fig. 3) of cathode contacts.Apd nude film
111 positive contact can be directly connected with the anode tap of printed circuit board (PCB) 112 by conducting resinl, and the moon of apd nude film 111
Pole contact can be connected to the negative electrode pin of printed circuit board (PCB) 112 by way of wire bonding (wire bonding), but this
Invention not limited to this.
According to example embodiment, metab 113 can have a holding area 118 at its center, can be set thereon
The printed circuit board (PCB) 112 being equipped with apd nude film 111 is arranged in the holding area 118 of metab 113, but the invention is not restricted to
This.
According to example embodiment, the both sides of the holding area of metab 113 are provided with two fixing holes, for will be many
Individual apd sensor is fixed together, but the invention is not restricted to this.The negative electrode pin of printed circuit board (PCB) 112 and negative electrode pin are permissible
Draw through the side wall of metab 113, the direction of two pins can be with the line direction at described two fixing hole centers
Vertically, but the invention is not restricted to this.
According to example embodiment, the width of metab 113 is less than 2cm and thickness is less than 2mm, so that apd is naked
The distance between piece is less, to realize small size encapsulation.
With reference to Fig. 3 (c), according to example embodiment, the lower surface of apd nude film 111 can include and printed circuit board (PCB) 112 coupling
The contact portion connecing, printed circuit board (PCB) 112 and metab 113 with the described apd nude film 111 in addition to described contact portion
Lower surface corresponding partly can be removed, to guarantee that x-ray will not stop by metab 113 and printed circuit board (PCB) 112,
So that x-ray can directly pass through apd nude film 111.Overetched method can be led to remove described part, but be not limited to
This, do not do particular determination to this in this illustrative embodiments.
(a), (b) and (c) of Fig. 4 diagrammatically illustrates stack according to an illustrative embodiment of the invention respectively
The front view of apd sensor, dorsal view and the cross-sectional perspective view along pp ' line；
With reference to Fig. 4, according to example embodiment, described fixing hole can be screw, it is possible to use screw s is by 8 single tube apd
Sensor links together, but the invention is not restricted to this.
According to example embodiment, can be provided with the upper surface of apd8 region corresponding with holding area 118
The crown cap m of closed shield effect, and the lower surface (the x-ray plane of incidence) in apd1 is provided with and seals and for x
Ray has beryllium window n of high-transmission rate, but the invention is not restricted to this.In this case, complete to stack apd sensor
100 encapsulation.
Such packaged type not only can realize be aligned and the fixation of apd1 to apd8, also around apd1 to apd8
Form layer of metal shell to shield visible ray, pass through beryllium window n simultaneously, direct detection can also be carried out to x-ray.
Additionally, stack apd sensor 100 can be inserted with outside pcb plate by stretching out the pin of metab 113
Pull out connection, be very easy to the follow-up system integration.
Fig. 5 diagrammatically illustrates the structure chart of apd nude film 111 according to an illustrative embodiment of the invention.
Referring to Fig. 5, according to example embodiment, apd nude film 111 includes photosensitive bodies, for receiving x-ray, this photosensitive master
Body doubles for absorption field control and separates (scam) structure, and this structure has p+πpπn+Dopant profiles, the configuration achieves absorption
Layer, field control the separation of layer and avalanche multiplication layer, and such region division makes multiplication region more easily reach carrier avalanche multiplication
When required high field intensity, thus reducing applying bias, also reduce the dark electricity being produced caused by recombination process by carrier
Stream, the high existing fringing field transition of uptake zone and avalanche region simultaneously steadily, is conducive to the rapid drift of carrier, improves the sound of device
Answer speed.Therefore, the apd nude film of scam structure has that fast response time, quantum efficiency be high, noise is low and running voltage low
The advantage of series.However, disclosure not limited to this, apd nude film 111 can also be the other structures realizing same effect.
With reference to Fig. 5, according to example embodiment, photosensitive bodies can include π type absorbed layer 111a, p-type field control layer 111b and π
Type avalanche multiplication layer 111c, but the invention is not restricted to this.
As shown in figure 5, according to example embodiment, apd nude film 111 can also include the n as cathode contacts+Layer 111d with
And the p as positive contact+Layer 111f.Apd nude film 111 can pass through n respectively+The n of layer 111d+Layer contact 111e and p+Layer
The p of 111f+Layer contact 111g is connected with the negative electrode pin of printed circuit board (PCB) 112 and negative electrode pin.
According to example embodiment, the area of the photosensitive bodies of apd nude film 111 can be arranged to 5mm × 5mm, to obtain
Enough reception solid angles, but the invention is not restricted to this.
According to example embodiment, if the thickness of whole apd nude film 111 is 50 μm, the thickness of absorbed layer 111a is permissible
For 45 μm or bigger.For the apd nude film 111 of scam structure, its time resolution passes through absorbed layer 111a by electronics
Transition time determined, saturation drift velocity in silicon for the electronics be 100 μm/ns, for 45 μm of absorbed layer 111a, electronics
The fastest transition time be 0.45ns, the time resolution that this also determines apd nude film 111 is about 0.45ns.In addition, being penetrated according to x
Attenuation length in silicon for the line, can calculate the quantum to different-energy x-ray for the apd nude film 111 under certain absorber thickness
Efficiency.If the thickness of the absorbed layer 111a of each apd nude film 111 is about 45 μm, 8 single tube apd sensor stack poststacks are inhaled
The gross thickness receiving layer may be about 360 μm, and the quantum efficiency under 14.4kev energy can be more than 60%.
It is extensive with baseline that the electric current that Fig. 6 diagrammatically illustrates according to an illustrative embodiment of the invention turns voltage amplification module
The structure chart of multiple module.
Voltage amplification module 210 is turned according to the electric current of example embodiment and baseline restorer module 220 can be used for multichannel and reads
Go out each passage of circuit 200.
With reference to Fig. 6, turn in voltage amplification module 210 in electric current, the first transistor m1, transistor seconds m2Constitute upset electricity
Pressure follower turns the input stage of voltage preamplifier as electric current, and electric current turns the equivalent input impedance of voltage preamplifier
rin_nCan be expressed as follows:
Wherein, gm1For the first transistor m1Mutual conductance, gm2For transistor seconds m2Mutual conductance, ro1For the first transistor m1's
Small-signal equivalent output resistance.Above formula shows to use less gm1Can get the equivalent input impedance of very little.Before electric current turns voltage
The noise putting amplifier is mainly by the first transistor m1Noise determine, and mutual conductance is less, the noise current of transistor is less, because
The electric current of this disclosure turns voltage preamplifier and has the little characteristic of equivalent input noise, is conducive to reading apd sensor defeated
The small-signal going out.Meanwhile, gm1Less, the first transistor m1Required bias current is also less, this reduces whole electricity
The power consumption of circulation voltage amplifier.
Can be by configuring the transistor seconds m of different channel dimensions2With third transistor m3By transistor seconds m2With
Third transistor m3It is configured to the current mirror of a 1:n, wherein, n is greater than 1 positive integer.The present embodiment uses two transistors
Constitute current mirror, but not limited to this, the structure with identical function can also be constituted by the combination of other electricity components.?
Current signal isAfter this current mirror, current signal isN times can be exaggerated, improve signal to noise ratio.
Third transistor m3It is configured to a common bank tube with relatively low input impedance, the 4th transistor m4With the 5th crystal
Pipe m5Size larger, there is larger drain terminal parasitic capacitance, this achieves load resistance r1With the 4th transistor m4The second end
And the 5th transistor m5The second end isolation, and then improve the operating rate of circuit.Exaggerated current signal n × isStream
Through load resistance r1, current signal is converted into voltage signal.
First operational amplifier a1With the second operational amplifier a2It is respectively provided with the characteristic of low gain high bandwidth, voltage signal warp
First operational amplifier a1With the second operational amplifier a2Signal to noise ratio is further increased, output can be follow-up after continuous amplification
The voltage signal v that signal processing circuit is effectively screenedout.
With reference to Fig. 6, in baseline restorer module 220, the 3rd operational amplifier a3For detectable voltage signals voutWith reference
Voltage vrefDifference, using the 3rd operational amplifier a3The comparative result producing is controlling controllable current source ib2Electric current.Controlled
Current source ib2The electric current of output is via the 5th transistor m5, the 6th transistor m6, the 7th transistor m7With the 8th transistor m8Constitute
High-precision current mirror feed back to electric current and turn voltage amplification module 210, to adjust the static work that electric current turns voltage amplification module 210
Make electric current, finally make voltage signal voutStablize in reference voltage vref, thus realizing the function of baseline restorer.
The principle of baseline restorer is described below: as voltage signal voutWhen becoming big, controllable current source ib2The electric current producing becomes
Little, that is, flow through load resistance r1Electric current diminish, load resistance r1The voltage at two ends diminishes, the first operational amplifier a1Outfan
Voltage become big, thus, voltage signal voutDiminish.Conversely, working as voltage signal voutBecome hour, controllable current source ib2The electricity producing
Rheology is big, that is, flow through load resistance r1Electric current become big, load resistance r1The voltage at two ends becomes big, the first operational amplifier a1Defeated
The voltage going out end diminishes, thus, voltage signal voutBecome big.Therefore, voltage signal voutDC level all-the-time stable in reference
Voltage vref.Additionally, for the output not affecting AC signal, the 3rd operational amplifier a3Should have low-down broadband.
The DC maladjustment of baseline restorer circuit for eliminating galvo-preamplifier so that can accurately setting electric current preposition
The discriminator of the discriminator of amplifier external is it is ensured that accurate examination to apd sensor photogenerated signals.
The high speed that Fig. 7 diagrammatically illustrates according to an illustrative embodiment of the invention screens the structure chart of module.
Screening at a high speed module 230 is to obtain the guarantee of high time resolution.With reference to Fig. 7, screening at a high speed module can be pre- by 4 grades
Amplifier (part of dotted line institute frame is the first order) cascade is constituted, and every grade of gain is 6, and band is wider than 500mhz, can be simultaneously
Meet high speed, high-precision requirement.All add, between the positive and negative output of every grade of big device of prevention, the mos that two diodes connect
Transistor, to stop corresponding stage from preventing the input pipe of big device to enter depth cut-off region, improves the comparison speed of circuit.Also simultaneously
The hysteresis circuitry being made up of four mos transistors can be increased, to eliminate the multiple triggering phenomenon caused by noise.
Fig. 8 diagrammatically illustrates the structure chart of lvds output module according to an illustrative embodiment of the invention.
As shown in figure 8, lvds output module 240 can be used for driving follow-up signal process circuit, lvds output module 240
For an open-drain differential pair structure, lvds level can be obtained by configuring three off chip resistors.Three mos transistor structures
Become the open-drain differential pair in piece, this open-drain differential pair and three off chip resistors collectively form lvds driver.With
When can also obtain the output level of other standards by configuring described three off chip resistors, flexibly and easily.
By above detailed description, those skilled in the art it can be readily appreciated that system according to embodiments of the present invention and
Method has one or more of the following advantages.
According to some embodiments of the present disclosure, by configuring multiple apd of order stacking setting in parallel relationship
Sensor, in the case of can differentiating realizing sub-nanosecond temporal, realizes high-quantum efficiency simultaneously.
According to some embodiments of the present disclosure, by configuring multichannel reading circuit, preferably mate apd sensor, from
And improve time resolution performance and the integrated level of apd detector.
According to some embodiments of the present disclosure, by multichannel reading circuit is configured to turn voltage amplification mould including electric current
Block, can read the small-signal of apd sensor output.
According to some embodiments of the present disclosure, lost by the direct current that baseline restorer road eliminates galvo-preamplifier
Adjust it is ensured that the accurate examination of photogenerated signals.
It will be understood by those skilled in the art that accompanying drawing is the schematic diagram of example embodiment, the module in accompanying drawing or flow process
Not necessarily implement necessary to the present invention, therefore cannot be used for limiting the scope of the invention.
It will be appreciated by those skilled in the art that above-mentioned each module can be distributed in device according to the description of embodiment, also may be used
It is disposed other than in one or more devices of the present embodiment with carrying out respective change.The module of above-described embodiment can be merged into
One module is it is also possible to be further split into multiple submodule.
Those skilled in the art, after considering description and putting into practice invention disclosed herein, will readily occur to its of the disclosure
Its embodiment.The application is intended to any modification, purposes or the adaptations of the disclosure, these modifications, purposes or
Person's adaptations are followed the general principle of the disclosure and are included the undocumented common knowledge in the art of the disclosure
Or conventional techniques.Description and embodiments be considered only as exemplary, the true scope of the disclosure and spirit by right will
Ask and point out.
It should be appreciated that the disclosure is not limited to be described above and precision architecture illustrated in the accompanying drawings, and
And various modifications and changes can carried out without departing from the scope.The scope of the present disclosure only to be limited by appended claim.
Claims (10)
1. a kind of sensor based on avalanche photodide is it is characterised in that include:
Multiple apd sensors, the order stacking setting in parallel relationship of the plurality of apd sensor,
Wherein, the plurality of apd sensor includes single tube apd sensor or array apd sensor.
2. sensor according to claim 1 is it is characterised in that described single tube apd sensor includes apd nude film, printing
Circuit board and metab, described metab has holding area,
Wherein, described apd nude film is arranged on the printed circuit board, and described printed circuit board (PCB) is arranged on described metal bottom
In the holding area of seat.
3. sensor according to claim 2 is it is characterised in that described apd nude film includes being arranged on its first surface
The cathode contacts of the positive contact second surface relative with described first surface with being arranged on it, described positive contact passes through conduction
Glue is connected with the negative electrode pin on described printed circuit board (PCB), and described cathode contacts are electric with described printing by way of wire bonding
The negative electrode pin of road plate connects.
4. sensor according to claim 2 is it is characterised in that the lower surface of described apd nude film includes and described printing
The contact portion that circuit board couples, described printed circuit board (PCB) and described metab with addition to described contact portion described in
The corresponding part of lower surface of apd nude film is removed.
5. sensor according to claim 2 is it is characterised in that the both sides of the described holding area of described metab set
It is equipped with fixing hole, described fixing hole is used for the plurality of apd sensor is fixed together.
6. the sensor according to any one of claim 2 to 5, described apd nude film includes photosensitive bodies, described photosensitive master
Body includes absorbed layer and described photosensitive bodies are to have p+πpπn+Dopant profiles absorption field control multiplication isolating construction.
7. sensor according to claim 6 is it is characterised in that the thickness of described absorbed layer accounts for the total of described photosensitive bodies
More than the 90% of thickness.
8. a kind of detector based on avalanche photodide is it is characterised in that include:
Sensor as any one of claim 1 to 7；
Multichannel reading circuit, described multichannel reading circuit and described sensor electric coupling, defeated for reading described sensor
The current signal going out.
9. detector according to claim 8 is it is characterised in that described multichannel reading circuit includes electric current turns voltage and put
Big module, described electric current turn voltage amplification module for receive be derived from the described current signal of described sensor, to described electric current
Signal is amplified, turn voltage processes and obtains voltage signal, and described voltage signal is amplified and exports.
10. detector according to claim 9 is it is characterised in that described multichannel reading circuit also includes baseline restorer
Module, described baseline restorer module is used for receiving the signal being turned the output of voltage amplification module by described electric current, and according to being connect
The signal receiving turns voltage amplification module output regulation current signal with the comparative result of reference voltage to described electric current.
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