CN104296866A - Interface circuit applied to avalanche photodiode working in linear mode - Google Patents
Interface circuit applied to avalanche photodiode working in linear mode Download PDFInfo
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- CN104296866A CN104296866A CN201410562776.2A CN201410562776A CN104296866A CN 104296866 A CN104296866 A CN 104296866A CN 201410562776 A CN201410562776 A CN 201410562776A CN 104296866 A CN104296866 A CN 104296866A
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Abstract
The invention discloses an interface circuit applied to an avalanche photodiode working in a linear mode. The interface circuit is composed of five parts, namely, a front-arranged trans-impedance amplifier, a single-turn dual-circuit, a voltage amplifier, an amplitude detector and a gating circuit. The front-arranged trans-impedance amplifier amplifies weak light induction current signals generated by the avalanche photodiode and converts the weak light induction current signals into voltage signals. The single-turn dual-circuit converts single-end output signals of the front-arranged trans-impedance amplifier into differential signals. The voltage amplifier further amplifies the differential signals to the order at which the differential signals can be distinguished by a comparator. The amplitude detector outputs reasonable digital logic signals according to the changes of signals at the input end of the amplitude detector. The gating circuit is used for controlling the working state of the circuit. The interface circuit is high in detection sensitivity and capable of being applied to detection of single photon signals of the avalanche photodiode. Meanwhile, the working state of the circuit can be controlled through a logic time sequence, the power consumption of the circuit can be effectively lowered, and the interface circuit is suitable for a large scale array detection system.
Description
Technical field
The present invention relates to Analogous Integrated Electronic Circuits, particularly relate to a kind of interface circuit being applied to the avalanche photodide be operated under linear model, belong to infrared detection technique.
Background technology
Photon detection technology is an important Technique of Weak Signal Detection, particularly at infrared communication wave band.Because loss is little in a fiber, to features such as eye-safes, infrared photon Detection Techniques are widely used in the aspects such as astrophysics, Ultra-weak Bioluminescence, air detection and remote sensing range finding for signal.Expand to infrared direction with avalanche photodide (APD), carry out the main flow direction that photon detection is this technical development.Utilize avalanche photodide, induction laser echo signal obtains current signal, voltage signal is converted to through interface circuit, then by rear class signal transacting, the information such as the flight time of laser, flying distance can be obtained, namely form basic infrared sensing sensing circuit (ROIC) system.
Sensing detection device in ROIC system mainly InGaAs APD, it is the optoelectronic sensor based on ionizing collision triggering avalanche multiplication mechanism, utilizes the avalanche effect of charge carrier to produce instant pulse current.According to the relativeness of APD reversed bias voltage and avalanche breakdown voltage, linear and Geiger two kinds of offset modes can be divided into.When reversed bias voltage is a little less than avalanche breakdown voltage, APD is operated in linear model, and the photoinduction size of current of output is directly proportional to incident intensity, and faint photon detection time induction current is only in microampere magnitude.Compared with Geiger mode angular position digitizer, linear mode bias is simple, power consumption is lower, the life-span is longer, is more suitable for the design of large scale array system.
The current signal of APD detection, must be processed by interface circuit.Interface circuit detects the output current signal of APD sensor, judges whether APD senses photon, and exports corresponding effective digital logic signal, provide rear class sensing circuit to process according to the size of current detected.
Under APD is operated in linear model, the voltage induction current of the microampere magnitude detected being converted into certain magnitude that can be able to detect for range detector is responsible for by interface circuit, circuit must have certain signal to noise ratio (S/N ratio), and the equivalent input noise of Trans-impedance preamplifier (TIA) must far below the sensitive current threshold detected.This current signal is also the narrow pulse signal of a nanosecond, and therefore Trans-impedance preamplifier must have higher bandwidth.Consider the input capacitance of the pico farad level brought after APD is connected with linear interface, Trans-impedance preamplifier must can reduce the impact even eliminated this large input capacitance and bring bandwidth simultaneously.
Interface circuit under APD linear model will meet high-gain, high bandwidth requirement, secondly owing to being the factor that the application of large array needs to consider to reduce power consumption and chip area simultaneously, has larger difficulty in design.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides a kind of interface circuit being applied to the avalanche photodide be operated under linear model, the avalanche photodide under linear model is operated in coupling, determined whether the photoinduction current signal of microampere order by the size detecting its output current, and export corresponding digital logic signal; In addition, the present invention carrys out the duty of control circuit by gate structure.
Technical scheme: for achieving the above object, the technical solution used in the present invention is:
Be applied to the interface circuit of the avalanche photodide be operated under linear model, comprise Trans-impedance preamplifier, singly turn double circuit, voltage amplifier, range detector and gating circuit, the input end of Trans-impedance preamplifier is as the input end of this interface circuit, the output terminal of Trans-impedance preamplifier connects single turn of double circuit input end, single turn of double circuit output terminal connects the input end of voltage amplifier, the output terminal of voltage amplifier connects the input end of range detector, and the output terminal of range detector is as the output terminal of this interface circuit;
Described Trans-impedance preamplifier, amplifies the faint light sensor current signal of avalanche photodide, the current signal after amplification is converted to voltage signal and exports simultaneously;
Describedly singly turn double circuit, the single-ended signal that Trans-impedance preamplifier exports is converted to differential signal and exports;
Described voltage amplifier, is amplified to magnitude that range detector can differentiate further by singly turning differential signal amplitude that double circuit exports and exports;
Described range detector, the change according to the differential signal amplitude of voltage amplifier output exports corresponding digital logic signal;
Described gating circuit, controls Trans-impedance preamplifier, the duty that singly turns double circuit, voltage amplifier and range detector.
During use, the negative electrode of avalanche photodide (APD) connects DC voltage, and anode connects Trans-impedance preamplifier.This interface circuit is mainly used in ROIC system.
Preferably, described Trans-impedance preamplifier adopts adjustable type cascade (RGC) structure; The most distinguishing feature of RCG structure is that input impedance is lower, has isolated the impact of APD input capacitance, has made input limit become low-resistance high frequency time limit, eliminates input end to the impact of system bandwidth.
Preferably, the described double circuit that singly turns adopts RC low-pass filter structure, and its timeconstantτ should much larger than the pulsewidth of Trans-impedance preamplifier output signal, guarantees within circuit effective detection time, provides enough differential signal to the voltage amplifier of rear class.
Preferably, described voltage amplifier adopts differential input structure, and be specially the form that voltage amplifier adopts multi-stage Low Noise Amplifier (LNA) cascade, concatenation unit LNA is basic differential pair structure, it adopts resistance to do load, and tail current is produced by tail resistance.The Differential Input form of differential pair can improve the noise antijamming capability of circuit; Resistance does load, can ensure the stable of output terminal quiescent point when tail current is certain; Meanwhile, tail current metal-oxide-semiconductor tail resistance is replaced, can biasing circuit be saved, and play suppression common-mode gain, keep the effect of certain CMRR.
Preferably, described range detector adopts single-stage or multistage inverter structure, and concrete progression is decided by the time requirement of the logical relation outputed signal and rising edge or negative edge.
Preferably, described gating circuit is made up of two signals, and START signal is used for the pretrigger of circuit, and EN signal exports for the logic of control circuit, and the former is more first than the latter effectively, and useful signal width is greater than the latter.
Beneficial effect: the interface circuit being applied to the avalanche photodide be operated under linear model provided by the invention, detection sensitivity is high, and working band is wide, can be used for the detection of applying linear model avalanche photodide single photon signal; Meanwhile, circuit working state can pass through logical-sequential control, effectively can reduce circuit power consumption, be applicable to large scale array detection system; Circuit of the present invention has that circuit power consumption is low, area compact, detection sensitivity high, meets the application requirement of large scale array infrared photon detection system.
Accompanying drawing explanation
Fig. 1 is project organization block diagram of the present invention;
Fig. 2 is the Trans-impedance preamplifier circuit diagram that the present invention adopts;
Fig. 3 is the differential pair element circuit figure that the present invention adopts;
The interface circuit example circuit diagram that Fig. 4 designs for the present invention;
The interface circuit Example logic sequential chart that Fig. 5 designs for the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further described.
Be illustrated in figure 1 a kind of interface circuit being applied to the avalanche photodide be operated under linear model, comprise Trans-impedance preamplifier, singly turn double circuit, voltage amplifier, range detector and gating circuit, the negative electrode of APD connects DC voltage, the anode of APD connects Trans-impedance preamplifier, the output terminal of Trans-impedance preamplifier connects single turn of double circuit input end, single turn of double circuit output terminal connects the input end of voltage amplifier, the output terminal of voltage amplifier connects the input end of range detector, and the output terminal of range detector exports digital logic signal.
Described Trans-impedance preamplifier, amplifies the faint light sensor current signal of avalanche photodide, the current signal after amplification is converted to voltage signal and exports simultaneously; Describedly singly turn double circuit, the single-ended signal that Trans-impedance preamplifier exports is converted to differential signal and exports; Described voltage amplifier, is amplified to magnitude that range detector can differentiate further by singly turning differential signal amplitude that double circuit exports and exports; Described range detector, the change according to the differential signal amplitude of voltage amplifier output exports corresponding digital logic signal; Described gating circuit, controls Trans-impedance preamplifier, the duty that singly turns double circuit, voltage amplifier and range detector.
Below in conjunction with example the present invention made and illustrating.
Under APD is operated in linear model, export the photoinduction current signal of microampere order.Thus, the overall design objective of linear interface circuit is the current signal of detection microampere order and exports available digital logic signal.As shown in Figure 1, suppose that the voltage signal amplitude that range detector can be differentiated is about 1V, then for the input electric cur-rent measure sensitivity of 3 μ A, total transimpedance gain is approximately 1V/3 μ A=3.3 × 105 Ω, i.e. 110.5dB Ω.The whole design idea of this circuit is: the photocurrent of APD induction carries out pre-amplification by Trans-impedance preamplifier, is converted to voltage signal, realizes the transimpedance gain of 80 ~ 90dB Ω; This voltage signal is amplified further by low noise differential amplifier LNA with difference form after singly turning double circuit conversion again, and low noise differential amplifier LNA provides the voltage gain of 30-40dB; Then judged process and export digital logic signal by range detector, thus complete the measuring ability to APD photoinduction electric current.
Described Trans-impedance preamplifier adopts adjustable type cascade (RGC) structure, and as shown in Figure 2, the output node of circuit is V to concrete structure
outpoint, transimpedance gain is approximate by its drain load resistance R
1determine, by the effect of Regulator loop gain, its sending-end impedance declines further under the state of input low-resistance, is approximately:
In formula, g
m1, g
mBfor M
1pipe and M
bthe mutual conductance of pipe under quiescent point, r
o1for M
1the intrinsic output impedance of pipe is high resistant character in saturated constant current district.At r
o1> > R
1, (g
mBr
b) g
m1r
o1under the condition of > > 1, above input impedance can be reduced to:
Here, have employed g
m1r
sg
mBr
bthe hypothesis of > > 1.In fact, as long as R
sbe not too small, this hypothesis is always set up.For common common gate (CG) structure, input impedance is 1/g
m1, after adopting RGC structure, input impedance decays g on the basis of CG structure
mBr
bdoubly.It is the most distinguishing feature of RGC structure that input impedance reduces further, and its effect one is the impact of isolation APD input capacitance, and input limit is low-resistance high frequency time limit, eliminates the impact on system broad, be secondly input impedance under certain condition with R
sirrelevant, the impact that quiescent point change is too serious on circuit AC characteristic can be eliminated.
Under the condition that above hypothesis is set up, if input capacitance is C
in, then input pole frequency and be approximately:
This input pole frequency is comparatively large, and become the secondary limit of circuit, dominant pole is determined by inside circuit node (output node).Like this, the junction capacity change within the specific limits of input endpoint APD, can't affect the effective bandwidth of circuit, and also can ignore the impact of current phase nargin, the linear working range of circuit is guaranteed.
RC low-pass filter structure can be regarded as and a kind ofly special singly turns double structure.Singly turn double circuit and adopt RC low-pass filter form, its structure is simple, is easy to realize.
The pass exporting through the ac small signal of RC low-pass filter circuit and input is:
V
out＝V
in(1-e
-t/τ) (4)
In formula, t is input small-signal pulsewidth, and τ is the RC constant of RC low-pass filter circuit.According to this formula, during t=0.2 τ, △ V=V
in-V
out≈ 0.82V
in.Obviously, for making circuit provide good list to turn two characteristic, RC constant τ should much larger than input signal V
induration of pulse be 1ns level, then RC constant τ should be greater than 5ns, just can guarantee that late-class circuit completes response; Meanwhile, if interface circuit is about 3ns detection time, then RC constant should be not less than 15ns.
Because the yield value of Trans-impedance preamplifier is large not, the voltage signal exported to make Trans-impedance preamplifier, by comparer identification, also need to do further voltage amplification, and voltage amplifier should be able to provide the gain of 30 ~ 40dB.But it should be noted that the yield value of voltage amplifier should mate with before and after trans-impedance amplifier in interface circuit and range detector, can not too small can not be excessive; Gain is too small, and circuit can not reach the testing requirement of microampere order current sensitivity; Gain is excessive, and circuit bandwidth is restricted, also too responsive for noise current interference while linear response performance degradation, and easy trigger erroneous detects.Therefore, the gain design of voltage amplifier needs overall situation consideration.
Fig. 3 is the low noise voltage amplifier that invention adopts, for resistance does the differential pair structure of load.Circuit adopt differential signal input, can intensifier circuit to the antijamming capability of noise circumstance.This differential pair circuit small-signal differential gain is in the state of the equilibrium:
Wherein, tail current I
ssproduced by tail resistance, and I
ss=V
p/ R
sS.Use tail resistance to replace tail current pipe, circuit does not need extra reference current source, and structure is simpler.By differential pair tube reasonable in design and tail resistance parameter, the small-signal gain of circuit can be determined.Meanwhile, the common mode electrical level that circuit exports is approximately the V determined
dD-I
sSr
d/ 2, stable DC point can be provided for rear class comparator circuit.
Range detector uses inverter structure to complete, metal-oxide-semiconductor M as shown in Figure 4
8~ M
11.After APD photoinduction electric current produces, at V
5node produces a positive signal amplitude change.In order to realize interface circuit sense photon time, export produce from 0 to 1 logic function change, need two-stage inverter structure.The trigging signal of phase inverter is according to the quiescent point of circuit and need the minimum signal amplitude detected to determine.
For reducing circuit power consumption, make circuit can be applied to large scale array system, interface circuit adds gate-control signal, circuit not current sinking outside gate-control signal effective time.The method adopted is series arm method, namely adds switching tube at each branch road, the conducting of control circuit and shutoff.Metal-oxide-semiconductor M as shown in Figure 4
c1~ M
c7.In real work, the conducting of circuit transient state needs the regular hour to steady state (SS), therefore need two gate-control signals with the use of.In Fig. 4, START signal, in advance in EN signal certain hour open circuit; Now, the input signal of EN span of control limit of control detecting device, guarantee START effectively (high level) and EN invalid (low level) time, Digital Logic exports can not be disorderly because of the circuit signal jitter possible when setting up working point.After access control signal, the work-based logic sequential chart of circuit as shown in Figure 5.
Adopt the design example as shown in Figure 4 of this invention, complete the testing requirement to the microampere order photoinduction electric current being operated in APD under linear model.Circuit adopts TSMC 0.35 μm of technique, at working temperature typical 0 DEG C, the detection sensitivity of circuit is 1.9 μ A, detects time delay 3ns, signal is input to voltage amplifier output terminal from trans-impedance amplifier input end and exports, achieve the gain of 111.6dB and 284.4MHz-three dB bandwidth; Meanwhile, when supply voltage is 3.3V, the quiescent dissipation of circuit is about 0.8mW, and chip area is 55 μm × 90 μm, can be used for the requirement of large scale array system.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (5)
1. be applied to the interface circuit of the avalanche photodide be operated under linear model, it is characterized in that: comprise Trans-impedance preamplifier, singly turn double circuit, voltage amplifier, range detector and gating circuit, the input end of Trans-impedance preamplifier is as the input end of this interface circuit, the output terminal of Trans-impedance preamplifier connects single turn of double circuit input end, single turn of double circuit output terminal connects the input end of voltage amplifier, the output terminal of voltage amplifier connects the input end of range detector, and the output terminal of range detector is as the output terminal of this interface circuit;
Described Trans-impedance preamplifier, amplifies the faint light sensor current signal of avalanche photodide, the current signal after amplification is converted to voltage signal and exports simultaneously;
Describedly singly turn double circuit, the single-ended signal that Trans-impedance preamplifier exports is converted to differential signal and exports;
Described voltage amplifier, is amplified to magnitude that range detector can differentiate further by singly turning differential signal amplitude that double circuit exports and exports;
Described range detector, the change according to the differential signal amplitude of voltage amplifier output exports corresponding digital logic signal;
Described gating circuit, controls Trans-impedance preamplifier, the duty that singly turns double circuit, voltage amplifier and range detector.
2. the interface circuit being applied to the avalanche photodide be operated under linear model according to claim 1, is characterized in that: described Trans-impedance preamplifier adopts adjustable type cascode structure.
3. the interface circuit being applied to the avalanche photodide be operated under linear model according to claim 1, is characterized in that: the described double circuit that singly turns adopts RC low-pass filter structure.
4. the interface circuit being applied to the avalanche photodide be operated under linear model according to claim 1, is characterized in that: described voltage amplifier adopts differential input structure.
5. the interface circuit being applied to the avalanche photodide be operated under linear model according to claim 1, is characterized in that: described range detector adopts single-stage or multistage inverter structure.
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Cited By (12)
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| CN106353785A (en) * | 2016-09-05 | 2017-01-25 | 中国科学院高能物理研究所 | Sensor and detector on basis of avalanche photodiodes |
| CN106354327A (en) * | 2016-09-13 | 2017-01-25 | 广州华欣电子科技有限公司 | Signal reception processing circuit and infrared touch systems |
| CN107271987A (en) * | 2017-07-10 | 2017-10-20 | 南京理工大学 | Laser ranging amplifying circuit based on avalanche photodide |
| CN107505056A (en) * | 2017-08-30 | 2017-12-22 | 浙江九州量子信息技术股份有限公司 | A kind of GHz near-infrared single photon detectors avalanche signal extraction system |
| EP3296761A1 (en) * | 2016-09-14 | 2018-03-21 | Topcon Corporation | Distance measuring device |
| CN109412615A (en) * | 2017-08-18 | 2019-03-01 | 李顺裕 | Wireless radio frequency system applied to Internet of things |
| CN109471009A (en) * | 2017-09-08 | 2019-03-15 | 科大国盾量子技术股份有限公司 | Bias current value detection circuit and single-photon detector intensity light attack detection circuit, method |
| WO2019130526A1 (en) * | 2017-12-27 | 2019-07-04 | 株式会社ニコンビジョン | Light detection device and method, and distance measurement device and method |
| WO2019229891A1 (en) * | 2018-05-30 | 2019-12-05 | 株式会社ニコンビジョン | Optical detection device and method, and distance measurement device and method |
| CN111446966A (en) * | 2020-05-06 | 2020-07-24 | 东南大学 | Single-phase clock high-speed low-power-consumption dynamic comparator applied to SAR ADC |
| CN112880827A (en) * | 2021-01-12 | 2021-06-01 | 上海医勒希科技有限公司 | Photon detection system and method |
| CN113720447A (en) * | 2021-08-30 | 2021-11-30 | 中国电子科技集团公司第四十四研究所 | Gate-controlled silicon-based visible near-infrared single photon detection device |
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|---|---|---|---|---|
| CN106353785A (en) * | 2016-09-05 | 2017-01-25 | 中国科学院高能物理研究所 | Sensor and detector on basis of avalanche photodiodes |
| CN106354327A (en) * | 2016-09-13 | 2017-01-25 | 广州华欣电子科技有限公司 | Signal reception processing circuit and infrared touch systems |
| EP3296761A1 (en) * | 2016-09-14 | 2018-03-21 | Topcon Corporation | Distance measuring device |
| CN107271987A (en) * | 2017-07-10 | 2017-10-20 | 南京理工大学 | Laser ranging amplifying circuit based on avalanche photodide |
| CN109412615B (en) * | 2017-08-18 | 2020-10-13 | 李顺裕 | Wireless radio frequency system applied to Internet of things |
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| CN109471009A (en) * | 2017-09-08 | 2019-03-15 | 科大国盾量子技术股份有限公司 | Bias current value detection circuit and single-photon detector intensity light attack detection circuit, method |
| CN109471009B (en) * | 2017-09-08 | 2023-11-03 | 科大国盾量子技术股份有限公司 | Bias value detection circuit and single photon detector strong light attack detection circuit and method |
| WO2019130526A1 (en) * | 2017-12-27 | 2019-07-04 | 株式会社ニコンビジョン | Light detection device and method, and distance measurement device and method |
| WO2019229891A1 (en) * | 2018-05-30 | 2019-12-05 | 株式会社ニコンビジョン | Optical detection device and method, and distance measurement device and method |
| JPWO2019229891A1 (en) * | 2018-05-30 | 2021-06-03 | 株式会社ニコンビジョン | Photodetectors and methods and ranging devices and methods |
| CN111446966B (en) * | 2020-05-06 | 2023-05-16 | 东南大学 | Single-phase clock high-speed low-power consumption dynamic comparator applied to SAR ADC |
| CN111446966A (en) * | 2020-05-06 | 2020-07-24 | 东南大学 | Single-phase clock high-speed low-power-consumption dynamic comparator applied to SAR ADC |
| CN112880827A (en) * | 2021-01-12 | 2021-06-01 | 上海医勒希科技有限公司 | Photon detection system and method |
| CN112880827B (en) * | 2021-01-12 | 2023-06-16 | 上海医勒希科技有限公司 | Photon detection system and method |
| CN113720447A (en) * | 2021-08-30 | 2021-11-30 | 中国电子科技集团公司第四十四研究所 | Gate-controlled silicon-based visible near-infrared single photon detection device |
| CN113720447B (en) * | 2021-08-30 | 2024-05-07 | 中国电子科技集团公司第四十四研究所 | Gate-controlled silicon-based visible near infrared single photon detection device |
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Application publication date: 20150121 |
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