CN106350774B - A kind of high temperature thermoelectric Sr3Co4O9The regulation and control method of film resiativity - Google Patents

A kind of high temperature thermoelectric Sr3Co4O9The regulation and control method of film resiativity Download PDF

Info

Publication number
CN106350774B
CN106350774B CN201610811259.3A CN201610811259A CN106350774B CN 106350774 B CN106350774 B CN 106350774B CN 201610811259 A CN201610811259 A CN 201610811259A CN 106350774 B CN106350774 B CN 106350774B
Authority
CN
China
Prior art keywords
film
single crystalline
crystalline substrate
regulation
control method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610811259.3A
Other languages
Chinese (zh)
Other versions
CN106350774A (en
Inventor
宋世金
虞澜
傅佳
倪佳
邱兴煌
陈琪
钟毅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kunming University of Science and Technology
Original Assignee
Kunming University of Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kunming University of Science and Technology filed Critical Kunming University of Science and Technology
Priority to CN201610811259.3A priority Critical patent/CN106350774B/en
Publication of CN106350774A publication Critical patent/CN106350774A/en
Application granted granted Critical
Publication of CN106350774B publication Critical patent/CN106350774B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment

Abstract

The present invention provides a kind of high temperature thermoelectric Sr3Co4O9The regulation and control method of film resiativity, belongs to film material with function field.The method of the invention grows in the inclined single crystalline substrate of different angle the Sr along c-axis extension by pulsed laser deposition3Co4O9Film regulates and controls the resistivity size of epitaxial film along inclined direction by the c-axis angle of inclination of single crystalline substrate.This method can reflect the electronic transport anisotropy of layered cobalt base oxide material.

Description

A kind of high temperature thermoelectric Sr3Co4O9The regulation and control method of film resiativity
Technical field
The present invention provides a kind of high temperature thermoelectric Sr3Co4O9The regulation and control method of film resiativity belongs to film material with function neck Domain.
Background technology
Wrong layer structure Sr3Co4O9By the CoO conducted2The Sr of layer and insulation2CoO3Layer is alternately piled up and along b along c-axis direction Axis mismatch, wherein CoO2The Co of low spin in layer4+( ) holoe carrier is provided, heat, electronic transport is strong Strong local inabIn face, Sr2CoO3Layer effectively reduces material thermal conductivity as phonon scattering centers, is both that one kind being provided simultaneously with height " electron crystal-phonon glasses " material of conductivity and lower thermal conductivity, and with significant structure and anisotropy is transported, in High, the electric conversion art of warm has huge applications potentiality.
As thermoelectric material, transfer efficiency is mainly by nondimensional thermoelectric figure of meritZTIt weighs,ZT=S 2 T(ρκ)-1, whereinS ~ Seebeck coefficient,ρ~ resistivity,κ=κ e+κ L~ thermal conductivity=electron thermal conductivity+lattice thermal conductivity,T~ absolute temperature.Due to resistance Rateρ, thermoelectrical potentialSAnd electron thermal conductivityκ eBetween the relationship vying each other, couple, it is achieved that the continuous regulation and control of resistivity size, So that material ZT values are optimal, it is significant to its practical application.
At present for the anisotropy that transports of material, such as resistivity anisotropyρ c/ρ abAnd thermoelectrical potential anisotropy Δ S= Sab-Sc, mainly directly measure and obtain in monocrystal material, but single crystal preparation process is complicated, expensive；Pass through easier side Method obtains material and transports anisotropy, and important research meaning is associated with to go deep into excavated material structure-performance.
Invention content
Of the existing technology in order to overcome the problems, such as, the purpose of the present invention is to provide a kind of high temperature thermoelectric Sr3Co4O9It is thin The regulation and control method of film resistivity：By pulsed laser deposition Sr is grown in the inclined single crystalline substrate of c-axis3Co4O9Epitaxial film, In-situ annealing postcooling obtains Sr to room temperature in static oxygen atmosphere3Co4O9Film；Pass through the c-axis inclination angle of regulating monocrystal substrate Degree can be obtained the Sr of different resistivity3Co4O9Film, the angle of inclination that the c-axis tilts single crystalline substrate are 0≤α≤90 °.
It is SrTiO that c-axis of the present invention, which tilts single crystalline substrate,3、LaAlO3Or (LaxSr1-x)(AlyTa1-y)O3。
The laser light source of pulsed laser deposition technique of the present invention is KrF excimer laser, and optical maser wavelength 248nm swashs Light pulsewidth 28ns, laser energy 175-350mJ, laser frequency 2-5Hz, back end vacuum 1 × 10-3Pa-1×10-4Pa, growth temperature 730-810 DEG C of degree, growth flowing oxygen press 5-50Pa.
The condition of in-situ annealing is in static state oxygen atmosphere of the present invention：750-850 DEG C of annealing temperature, annealing oxygen pressure 1 × 104-5×104Pa, annealing time 10-30min.
The c-axis of different angle of the present invention tilts single crystalline substrate can be by the monocrystalline that routine (001) is orientated along (001) Deflection 0<α≤90 ° cutting obtains, and is the ordinary skill in the art.
The principle of the present invention is：Regulate and control the orientation of growth of epitaxial film by the c-axis angle of inclination of single crystalline substrate, obtains edge Electric transport properties on material different orientation, and then realize the continuous regulation and control of resistivity size.
Beneficial effects of the present invention：Epitaxial film resistivity can be achieved in ρab~ρcBetween continuous regulation and control；Stratiform can be reacted The resistivity anisotropy of cobalt base oxide material.
Specific implementation mode
With reference to specific embodiment, invention is further described in detail, but protection scope of the present invention is not limited to The content.
C-axis of the present invention tilts the common substrate that single crystalline substrate is the growth of stratiform Co base oxide films, and substrate will have With crystal structure, lattice constant and coefficient of thermal expansion similar in thin-film material.It is all the SrTiO of cubic perovskite structure3、 LaAlO3(LaxSr1-x)(AlyTa1-y)O3Substrate, with film Sr2CoO3Crystal structure, lattice constant and the thermal expansion of sub-layer Sr can be achieved in coefficient similar3Co4O9The epitaxial growth of film, with SrTiO in the embodiment of the present invention3It is said for substrate It is bright.
Embodiment 1
C-axis tilts the pretreatment of single crystalline substrate：By 0 ° of inclined SrTiO3(100) single crystalline substrate is in air atmosphere 1000 DEG C of 1h that anneal next time, later at room temperature successively use acetone, alcohol and deionized water in ultrasonic cleaner everywhere 2min, then 1000 DEG C of 1h that anneal next time in air atmosphere are managed, there is single TiO to obtain2Terminate layer, atomically flat table The single crystalline substrate in face.
Epitaxial film growth：Pulsed laser deposition technique is used to swash with the KrF quasi-molecules of wavelength 248nm, sharp pulsewidth 28ns Light is light source, with laser energy 175mJ, laser frequency 3Hz, back end vacuum 1 × 10-3Pa, 780 DEG C of underlayer temperature flow oxygen pressure 30Pa is growth technique, SrTiO after pretreatment3 (001) Sr is grown in single crystalline substrate3Co4O9Film, later at 780 DEG C and 1×104Pa static state oxygen depresses in-situ annealing 20min.
The room temperature resistivity of film along inclined direction is shown in Table 1.
Embodiment 2
C-axis tilts the pretreatment of single crystalline substrate：By 5 ° of inclined SrTiO3(100) single crystalline substrate is in air atmosphere 1000 DEG C of 1h that anneal next time, later at room temperature successively use acetone, alcohol and deionized water in ultrasonic cleaner everywhere 2min, then 1000 DEG C of 1h that anneal next time in air atmosphere are managed, there is single TiO to obtain2Terminate layer, atomically flat platform The single crystalline substrate of rank.
Epitaxial film growth：Pulsed laser deposition technique is used to swash with the KrF quasi-molecules of wavelength 248nm, sharp pulsewidth 28ns Light is light source, with laser energy 175mJ, laser frequency 3Hz, back end vacuum 1 × 10-3Pa, 780 DEG C of underlayer temperature flow oxygen pressure 30Pa is growth technique, SrTiO after pretreatment3 (001) Sr is grown in single crystalline substrate3Co4O9Film, later at 780 DEG C and 1×104Pa static state oxygen depresses in-situ annealing 20min.
Film room temperature resistivity along inclined direction and anisotropy are shown in Table 1.
Embodiment 3
C-axis tilts the pretreatment of single crystalline substrate：By 10 ° of inclined SrTiO3(100) single crystalline substrate is in air atmosphere 1000 DEG C of 1h that anneal next time, later at room temperature successively use acetone, alcohol and deionized water in ultrasonic cleaner everywhere 2min, then 1000 DEG C of 1h that anneal next time in air atmosphere are managed, there is single TiO to obtain2Terminate layer, atomically flat platform The single crystalline substrate of rank.
Epitaxial film growth：Pulsed laser deposition technique is used to swash with the KrF quasi-molecules of wavelength 248nm, sharp pulsewidth 28ns Light is light source, with laser energy 175mJ, laser frequency 3Hz, back end vacuum 1 × 10-3Pa, 780 DEG C of underlayer temperature flow oxygen pressure 30Pa is growth technique, SrTiO after pretreatment3 (001) Sr is grown in single crystalline substrate3Co4O9Film, later at 780 DEG C and 1×104Pa static state oxygen depresses in-situ annealing 20min.
Film room temperature resistivity along inclined direction and anisotropy are shown in Table 1.
Embodiment 4
C-axis tilts the pretreatment of single crystalline substrate：By 20 ° of inclined SrTiO3(100) single crystalline substrate is in air atmosphere 1000 DEG C of 1h that anneal next time, later at room temperature successively use acetone, alcohol and deionized water in ultrasonic cleaner everywhere 2min, then 1000 DEG C of 1h that anneal next time in air atmosphere are managed, there is single TiO to obtain2Terminate layer, atomically flat platform The single crystalline substrate of rank.
Epitaxial film growth：Pulsed laser deposition technique is used to swash with the KrF quasi-molecules of wavelength 248nm, sharp pulsewidth 28ns Light is light source, with laser energy 175mJ, laser frequency 3Hz, back end vacuum 1 × 10-3Pa, 780 DEG C of underlayer temperature flow oxygen pressure 30Pa is growth technique, SrTiO after pretreatment3 (001) Sr is grown in single crystalline substrate3Co4O9Film, later at 780 DEG C and 1×104Pa static state oxygen depresses in-situ annealing 20min.
Film room temperature resistivity along inclined direction and anisotropy are shown in Table 1.
Embodiment 5
C-axis tilts the pretreatment of single crystalline substrate：By 30 ° of inclined SrTiO3(100) single crystalline substrate is in air atmosphere 1000 DEG C of 1h that anneal next time, later at room temperature successively use acetone, alcohol and deionized water in ultrasonic cleaner everywhere 2min, then 1000 DEG C of 1h that anneal next time in air atmosphere are managed, there is single TiO to obtain2Terminate layer, atomically flat platform The single crystalline substrate of rank.
Epitaxial film growth：Pulsed laser deposition technique is used to swash with the KrF quasi-molecules of wavelength 248nm, sharp pulsewidth 28ns Light is light source, with laser energy 175mJ, laser frequency 3Hz, back end vacuum 1 × 10-3Pa, 780 DEG C of underlayer temperature flow oxygen pressure 30Pa is growth technique, SrTiO after pretreatment3 (001) Sr is grown in single crystalline substrate3Co4O9Film, later at 780 DEG C and 1×104Pa static state oxygen depresses in-situ annealing 20min.
Film room temperature resistivity along inclined direction and anisotropy are shown in Table 1.
Embodiment 6
C-axis tilts the pretreatment of single crystalline substrate：By 40 ° of inclined SrTiO3(100) single crystalline substrate is in air atmosphere 1000 DEG C of 1h that anneal next time, later at room temperature successively use acetone, alcohol and deionized water in ultrasonic cleaner everywhere 2min, then 1000 DEG C of 1h that anneal next time in air atmosphere are managed, there is single TiO to obtain2Terminate layer, atomically flat platform The single crystalline substrate of rank.
Epitaxial film growth：Pulsed laser deposition technique is used to swash with the KrF quasi-molecules of wavelength 248nm, sharp pulsewidth 28ns Light is light source, with laser energy 175mJ, laser frequency 3Hz, back end vacuum 1 × 10-3Pa, 780 DEG C of underlayer temperature flow oxygen pressure 30Pa is growth technique, SrTiO after pretreatment3 (001) Sr is grown in single crystalline substrate3Co4O9Film, later at 780 DEG C and 1×104Pa static state oxygen depresses in-situ annealing 20min.
Film room temperature resistivity along inclined direction and anisotropy are shown in Table 1.
Embodiment 7
C-axis tilts the pretreatment of single crystalline substrate：By 50 ° of inclined SrTiO3(100) single crystalline substrate is in air atmosphere 1000 DEG C of 1h that anneal next time, later at room temperature successively use acetone, alcohol and deionized water in ultrasonic cleaner everywhere 2min, then 1000 DEG C of 1h that anneal next time in air atmosphere are managed, there is single TiO to obtain2Terminate layer, atomically flat platform The single crystalline substrate of rank.
Epitaxial film growth：Pulsed laser deposition technique is used to swash with the KrF quasi-molecules of wavelength 248nm, sharp pulsewidth 28ns Light is light source, with laser energy 175mJ, laser frequency 3Hz, back end vacuum 1 × 10-3Pa, 780 DEG C of underlayer temperature flow oxygen pressure 30Pa is growth technique, SrTiO after pretreatment3 (001) Sr is grown in single crystalline substrate3Co4O9Film, later at 780 DEG C and 1×104Pa static state oxygen depresses in-situ annealing 20min.
Film room temperature resistivity along inclined direction and anisotropy are shown in Table 1.
Embodiment 8
C-axis tilts the pretreatment of single crystalline substrate：By 60 ° of inclined SrTiO3(100) single crystalline substrate is in air atmosphere 1000 DEG C of 1h that anneal next time, later at room temperature successively use acetone, alcohol and deionized water in ultrasonic cleaner everywhere 2min, then 1000 DEG C of 1h that anneal next time in air atmosphere are managed, there is single TiO to obtain2Terminate layer, atomically flat platform The single crystalline substrate of rank.
Epitaxial film growth：Pulsed laser deposition technique is used to swash with the KrF quasi-molecules of wavelength 248nm, sharp pulsewidth 28ns Light is light source, with laser energy 175mJ, laser frequency 3Hz, back end vacuum 1 × 10-3Pa, 780 DEG C of underlayer temperature flow oxygen pressure 30Pa is growth technique, SrTiO after pretreatment3 (001) Sr is grown in single crystalline substrate3Co4O9Film, later at 780 DEG C and 1×104Pa static state oxygen depresses in-situ annealing 20min.
Film room temperature resistivity along inclined direction and anisotropy are shown in Table 1.
Embodiment 9
C-axis tilts the pretreatment of single crystalline substrate：By 70 ° of inclined SrTiO3(100) single crystalline substrate is in air atmosphere 1000 DEG C of 1h that anneal next time, later at room temperature successively use acetone, alcohol and deionized water in ultrasonic cleaner everywhere 2min, then 1000 DEG C of 1h that anneal next time in air atmosphere are managed, there is single TiO to obtain2Terminate layer, atomically flat platform The single crystalline substrate of rank.
Epitaxial film growth：Pulsed laser deposition technique is used to swash with the KrF quasi-molecules of wavelength 248nm, sharp pulsewidth 28ns Light is light source, with laser energy 175mJ, laser frequency 3Hz, back end vacuum 1 × 10-3Pa, 780 DEG C of underlayer temperature flow oxygen pressure 30Pa is growth technique, SrTiO after pretreatment3 (001) Sr is grown in single crystalline substrate3Co4O9Film, later at 780 DEG C and 1×104Pa static state oxygen depresses in-situ annealing 20min.
Film room temperature resistivity along inclined direction and anisotropy are shown in Table 1.
Embodiment 10
C-axis tilts the pretreatment of single crystalline substrate：By 80 ° of inclined SrTiO3(100) single crystalline substrate is in air atmosphere 1000 DEG C of 1h that anneal next time, later at room temperature successively use acetone, alcohol and deionized water in ultrasonic cleaner everywhere 2min, then 1000 DEG C of 1h that anneal next time in air atmosphere are managed, there is single TiO to obtain2Terminate layer, atomically flat platform The single crystalline substrate of rank.
Epitaxial film growth：Pulsed laser deposition technique is used to swash with the KrF quasi-molecules of wavelength 248nm, sharp pulsewidth 28ns Light is light source, with laser energy 175mJ, laser frequency 3Hz, back end vacuum 1 × 10-3Pa, 780 DEG C of underlayer temperature flow oxygen pressure 30Pa is growth technique, SrTiO after pretreatment3 (001) Sr is grown in single crystalline substrate3Co4O9Film, later at 780 DEG C and 1×104Pa static state oxygen depresses in-situ annealing 20min.
Film room temperature resistivity along inclined direction and anisotropy are shown in Table 1.
Embodiment 11
C-axis tilts the pretreatment of single crystalline substrate：By 90 ° of inclined SrTiO3(100) single crystalline substrate is in air atmosphere 1000 DEG C of 1h that anneal next time, later at room temperature successively use acetone, alcohol and deionized water in ultrasonic cleaner everywhere 2min, then 1000 DEG C of 1h that anneal next time in air atmosphere are managed, there is single TiO to obtain2Terminate layer, atomically flat platform The single crystalline substrate of rank.
Epitaxial film growth：Pulsed laser deposition technique is used to swash with the KrF quasi-molecules of wavelength 248nm, sharp pulsewidth 28ns Light is light source, with laser energy 175mJ, laser frequency 3Hz, back end vacuum 1 × 10-3Pa, 780 DEG C of underlayer temperature flow oxygen pressure 30Pa is growth technique, SrTiO after pretreatment3 (001) Sr is grown in single crystalline substrate3Co4O9Film, later at 780 DEG C and 1×104Pa static state oxygen depresses in-situ annealing 20min.
Table 1 is the c-axis degree of tilt of substrate and the room temperature resistivity and anisotropy of corresponding epitaxial film

Claims (4)

1. a kind of high temperature thermoelectric Sr3Co4O9The regulation and control method of film resiativity, it is characterised in that：By pulsed laser deposition in c Sr is grown in the inclined single crystalline substrate of axis3Co4O9Epitaxial film, in-situ annealing postcooling is obtained to room temperature in static oxygen atmosphere Sr3Co4O9Film；It can be obtained the Sr of different resistivity by the c-axis angle of inclination of regulating monocrystal substrate3Co4O9Film, it is described The angle of inclination that c-axis tilts single crystalline substrate is 0≤α≤90 °.
2. high temperature thermoelectric Sr according to claim 13Co4O9The regulation and control method of film resiativity, it is characterised in that：C-axis tilts Single crystalline substrate is SrTiO3、LaAlO3Or (LaxSr1-x)(AlyTa1-y)O3。
3. high temperature thermoelectric Sr according to claim 13Co4O9The regulation and control method of film resiativity, it is characterised in that：The arteries and veins The laser light source for rushing laser deposition technique is KrF excimer laser, optical maser wavelength 248nm, laser pulse width 28ns, laser energy 175-350mJ, laser frequency 2-5Hz, back end vacuum 1 × 10-3Pa-1×10-4Pa, 730-810 DEG C of growth temperature, growth flowing Oxygen presses 5-50Pa.
4. high temperature thermoelectric Sr according to claim 13Co4O9The regulation and control method of film resiativity, it is characterised in that：Static oxygen The condition of in-situ annealing is in atmosphere：750-850 DEG C of annealing temperature, annealing oxygen pressure 1 × 104-5×104Pa, annealing time 10- 30min。
CN201610811259.3A 2016-09-09 2016-09-09 A kind of high temperature thermoelectric Sr3Co4O9The regulation and control method of film resiativity Active CN106350774B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610811259.3A CN106350774B (en) 2016-09-09 2016-09-09 A kind of high temperature thermoelectric Sr3Co4O9The regulation and control method of film resiativity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610811259.3A CN106350774B (en) 2016-09-09 2016-09-09 A kind of high temperature thermoelectric Sr3Co4O9The regulation and control method of film resiativity

Publications (2)

Publication Number Publication Date
CN106350774A CN106350774A (en) 2017-01-25
CN106350774B true CN106350774B (en) 2018-11-09

Family

ID=57857875

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610811259.3A Active CN106350774B (en) 2016-09-09 2016-09-09 A kind of high temperature thermoelectric Sr3Co4O9The regulation and control method of film resiativity

Country Status (1)

Country Link
CN (1) CN106350774B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107192469A (en) * 2017-06-07 2017-09-22 昆明理工大学 A kind of low temperature temperature element based on layered cobalt oxide
CN107287564B (en) * 2017-06-07 2019-04-12 昆明理工大学 A method of increasing SYCO-314 membrane laser induced potential
CN109103324A (en) * 2018-06-26 2018-12-28 昆明理工大学 A kind of hot induced voltage material and its application

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102356305A (en) * 2010-05-27 2012-02-15 松下电器产业株式会社 Thermoelectric conversion device, radiation detector, and radiation detection method using same

Also Published As

Publication number Publication date
CN106350774A (en) 2017-01-25

Similar Documents

Publication Publication Date Title
CN106350774B (en) A kind of high temperature thermoelectric Sr3Co4O9The regulation and control method of film resiativity
Sun et al. Optical properties of epitaxially grown zinc oxide films on sapphire by pulsed laser deposition
Jun et al. Comparative studies of Al-doped ZnO and Ga-doped ZnO transparent conducting oxide thin films
US8795854B2 (en) Semiconductor-based, large-area, flexible, electronic devices on {110}&lt;100&gt; oriented substrates
US7906229B2 (en) Semiconductor-based, large-area, flexible, electronic devices
Opel et al. Laser molecular beam epitaxy of ZnO thin films and heterostructures
Hiramatsu et al. Mechanism for heteroepitaxial growth of transparent p-type semiconductor: LaCuOS by reactive solid-phase epitaxy
CN107287578A (en) A kind of chemical gas-phase deposition process for preparing of a wide range of uniform double-deck molybdenum disulfide film
CA2749804A1 (en) Semiconductor-based, large-area, flexible, electronic devices on {110}&lt;100&gt; oriented substrates
CN106399937B (en) A method of preparing preferred orientation bismuth telluride thermal electric film
CN106756793A (en) A kind of regulation and control method of nickel acid neodymium base superlattices phase change film material and its preparation and metal-insulator transition temperature
CN106350773B (en) A method of increasing layered cobalt base oxide thin film high temperature thermoelectrical potential
Chen et al. Effect of temperature on lateral growth of ZnO grains grown by MOCVD
CN106498354B (en) A method of preparing hexagonal Spiral morphology bismuth telluride thermal electric film
Takashima et al. Near-infrared luminescence in perovskite BaSnO3 epitaxial films
CN109554674A (en) A kind of preparation method of the bismuth telluride thermal electric film with heterojunction structure
Jun et al. Comparative analysis of Al-doped ZnO and Ga-doped ZnO thin films
Brinks et al. High-temperature stability of thermoelectric Ca3Co4O9 thin films
CN112864300B (en) Bismuth telluride base alloy film-perovskite oxide heterojunction composite thermoelectric material and preparation and application thereof
Mietschke et al. Structural and ferroelectric properties of 0.9 PMN-0.1 PT thin films
CN107059119B (en) Method for preparing polycrystalline SiC film through sapphire substrate
Chander et al. Effect of thickness on structural, optical and electrical properties of In2S3 thin films grown by thermal evaporation for solar cell buffer layer applications
Zeng et al. Anisotropic transport properties of single-crystal (La, Ca) MnO δ thin films
Kumar et al. Investigation on room temperature multiferroic bi-relaxor
Wang et al. The optical dispersion of Langmuir-Blodgett terpolymer films

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant