CN106348244B - 一种石墨烯基纳米线复合结构及其制备方法 - Google Patents
一种石墨烯基纳米线复合结构及其制备方法 Download PDFInfo
- Publication number
- CN106348244B CN106348244B CN201610879358.5A CN201610879358A CN106348244B CN 106348244 B CN106348244 B CN 106348244B CN 201610879358 A CN201610879358 A CN 201610879358A CN 106348244 B CN106348244 B CN 106348244B
- Authority
- CN
- China
- Prior art keywords
- graphene
- metallic compound
- nano line
- compound nano
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 104
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 102
- 239000002070 nanowire Substances 0.000 title claims abstract description 54
- 239000002131 composite material Substances 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 229910000765 intermetallic Inorganic materials 0.000 claims abstract description 94
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 16
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 13
- 229910001297 Zn alloy Inorganic materials 0.000 claims description 11
- 239000002356 single layer Substances 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 150000002736 metal compounds Chemical class 0.000 claims description 3
- 230000035484 reaction time Effects 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 239000004575 stone Substances 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 238000010276 construction Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 241000209094 Oryza Species 0.000 description 4
- 235000007164 Oryza sativa Nutrition 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 235000012149 noodles Nutrition 0.000 description 4
- 235000009566 rice Nutrition 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001027 hydrothermal synthesis Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- -1 Graphite alkene Chemical class 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000026267 regulation of growth Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229960001296 zinc oxide Drugs 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/04—Networks or arrays of similar microstructural devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/00373—Selective deposition, e.g. printing or microcontact printing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/05—Arrays
- B81B2207/056—Arrays of static structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0198—Manufacture or treatment of microstructural devices or systems in or on a substrate for making a masking layer
Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610879358.5A CN106348244B (zh) | 2016-10-09 | 2016-10-09 | 一种石墨烯基纳米线复合结构及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610879358.5A CN106348244B (zh) | 2016-10-09 | 2016-10-09 | 一种石墨烯基纳米线复合结构及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106348244A CN106348244A (zh) | 2017-01-25 |
CN106348244B true CN106348244B (zh) | 2019-03-05 |
Family
ID=57867143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610879358.5A Active CN106348244B (zh) | 2016-10-09 | 2016-10-09 | 一种石墨烯基纳米线复合结构及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106348244B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107221371A (zh) * | 2017-02-17 | 2017-09-29 | 全普光电科技(上海)有限公司 | 具有空腔的石墨烯基复合薄膜及其制备方法 |
CN107680705A (zh) * | 2017-09-19 | 2018-02-09 | 壹号元素(广州)科技有限公司 | 一种有序排列的宽禁带半导体纳米线的同位素电池 |
CN108461303A (zh) * | 2018-03-27 | 2018-08-28 | 哈尔滨理工大学 | 二氧化钛纳米线-石墨烯复合材料的制备方法 |
CN109211991B (zh) * | 2018-09-25 | 2021-06-22 | 红河学院 | 一种基于氮硫共掺杂石墨烯负载合金纳米线复合材料电化学传感器的建构及其应用 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8257867B2 (en) * | 2008-07-28 | 2012-09-04 | Battelle Memorial Institute | Nanocomposite of graphene and metal oxide materials |
FR2962995B1 (fr) * | 2010-07-21 | 2013-07-05 | Commissariat Energie Atomique | Procede de fabrication d'une structure comprenant un feuillet de graphene muni de plots metalliques, structure ainsi obtenue et ses utilisations |
US9349543B2 (en) * | 2012-07-30 | 2016-05-24 | California Institute Of Technology | Nano tri-carbon composite systems and manufacture |
CN102757041A (zh) * | 2012-07-30 | 2012-10-31 | 哈尔滨工业大学 | 一种石墨烯/金属氧化物纳米复合材料粉体的制备方法 |
CN104549363B (zh) * | 2014-12-31 | 2018-04-17 | 江苏大学 | 一种纳米金属或金属合金催化剂及其制备方法 |
CN106449133B (zh) * | 2016-10-08 | 2020-03-31 | 全普半导体科技(深圳)有限公司 | 单层石墨烯薄膜基复合结构、制备方法及半导体器件 |
CN206244402U (zh) * | 2016-10-09 | 2017-06-13 | 全普光电科技(上海)有限公司 | 一种石墨烯基纳米线复合结构 |
-
2016
- 2016-10-09 CN CN201610879358.5A patent/CN106348244B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN106348244A (zh) | 2017-01-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106348244B (zh) | 一种石墨烯基纳米线复合结构及其制备方法 | |
US9202975B2 (en) | Light emitting diode including graphene layer | |
US9190565B2 (en) | Light emitting diode | |
US8865577B2 (en) | Method for making epitaxial structure | |
US9231060B2 (en) | Eptaxial structure | |
US9099307B2 (en) | Method for making epitaxial structure | |
US8900977B2 (en) | Method for making epitaxial structure | |
CN104995741B (zh) | 半导体纳米线的凹槽式接触 | |
CN103378236B (zh) | 具有微构造的外延结构体 | |
US8859402B2 (en) | Method for making epitaxial structure | |
US20130285016A1 (en) | Epitaxial structure | |
US9105484B2 (en) | Epitaxial stucture | |
CN104241465A (zh) | 一种纳米粗化复合图形化的蓝宝石衬底及制备方法 | |
Beaudry et al. | Directed branch growth in aligned nanowire arrays | |
US8823045B2 (en) | Light emitting diode with graphene layer | |
CN206244402U (zh) | 一种石墨烯基纳米线复合结构 | |
CN104952987B (zh) | 发光二极管 | |
CN104254925B (zh) | 氧化锌凹凸结构的形成方法及利用其的太阳能电池的制造方法 | |
CN105845714B (zh) | 一种基于桥接生长的纳米线器件及其制备方法 | |
CN109962010B (zh) | 圆晶级大面积半导体纳米片及其制备方法 | |
CN104701137B (zh) | AlN缓冲层及具有该缓冲层的芯片的制备方法 | |
CN104867868B (zh) | 无催化剂横向生长纳米线网电路的方法 | |
CN104505343B (zh) | 一种制备ZnO纳米栅栏的方法 | |
CN103337564A (zh) | 一种可提高led发光效率的金属纳米颗粒的制备方法 | |
KR20190063045A (ko) | 그래핀과 나노와이어를 이용한 투명전극 및 그의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190909 Address after: 518000 44 storey Longgang Venture Capital Building, Tengfei Road, Longgang District, Shenzhen City, Guangdong Province Patentee after: Quanpu Semiconductor Technology (Shenzhen) Co.,Ltd. Address before: 201203 Pudong New Area Zhang Heng Road, Lane 2, building No. 1000, No. 206, Shanghai Patentee before: The photoelectric technology (Shanghai) Co.,Ltd. |
|
PP01 | Preservation of patent right | ||
PP01 | Preservation of patent right |
Effective date of registration: 20230519 Granted publication date: 20190305 |
|
PD01 | Discharge of preservation of patent | ||
PD01 | Discharge of preservation of patent |
Date of cancellation: 20231024 Granted publication date: 20190305 |