CN106346093A - Electrode preparing method, electrode component and special processing platform - Google Patents

Electrode preparing method, electrode component and special processing platform Download PDF

Info

Publication number
CN106346093A
CN106346093A CN201610979028.3A CN201610979028A CN106346093A CN 106346093 A CN106346093 A CN 106346093A CN 201610979028 A CN201610979028 A CN 201610979028A CN 106346093 A CN106346093 A CN 106346093A
Authority
CN
China
Prior art keywords
electrode
focused ion
substrate
electrod assembly
workpiece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610979028.3A
Other languages
Chinese (zh)
Other versions
CN106346093B (en
Inventor
郭登极
伍晓宇
雷建国
徐斌
罗烽
阮双琛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen University
Original Assignee
Shenzhen University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen University filed Critical Shenzhen University
Priority to CN201610979028.3A priority Critical patent/CN106346093B/en
Publication of CN106346093A publication Critical patent/CN106346093A/en
Application granted granted Critical
Publication of CN106346093B publication Critical patent/CN106346093B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23HWORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H1/00Electrical discharge machining, i.e. removing metal with a series of rapidly recurring electrical discharges between an electrode and a workpiece in the presence of a fluid dielectric
    • B23H1/04Electrodes specially adapted therefor or their manufacture
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23HWORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H7/00Processes or apparatus applicable to both electrical discharge machining and electrochemical machining
    • B23H7/22Electrodes specially adapted therefor or their manufacture

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)

Abstract

The invention discloses an electrode preparing method, an electrode component and a special processing platform. The preparing method comprises: fixing a base for preparing an electrode on a processing platform; providing raw material gas to a to-be-formed area of the base; irradiating a focused ion beam onto the to-be-formed area of the base to grow the electrode in the to-be-formed area. Compared with the approaches in the prior art for preparing an electrode by means of grinding, cutting, and the like, on one hand, preparing the electrode by means of focusing the ion beam can improve accuracy of the electrode, which can usually achieve nanoscale by the focused ion beam, and on the other hand, preparing the electrode by means of growing, as compared with the approach of abandoning surplus raw materials such as grinding and cutting, can more effectively use the raw materials, thereby reducing the cost for preparing the electrode. In addition, preparing the electrode by means of growing can prepare a three dimensional electrode with a complex shape, and a complex 3D processing can be performed.

Description

Electrode preparation method, electrod assembly and special process platform
Technical field
The present invention relates to field of machining is and in particular to a kind of electrode preparation method, electrod assembly and the special process are put down Platform.
Background technology
For the special process, during spark machined (edm) or electrochemical discharge Compound Machining (ecdm), electrode and work Discharge effect between part makes workpiece be processed.Electrode pair processing result has direct influence, therefore how to facilitate To produce high-precision electrode be an important problem.
In prior art, the preparation method of electrode mainly has following several: (1) machining: cost is relatively low, but can only process The electrode that geometry is relatively simple, required precision is not high;(2) backcopy process: assign electrode to be used as workpiece, use metal Or graphite block carries out edm as electrode and goes to shape.This method typically requires changes multiple stations and is processed, and efficiency is low, and The relatively simple electrode of geometry can only be processed, precision typically can only achieve micron order;(3) line electrode electric spark grinding technology (wedg): by the increasing pool of Tokyo Univ Japan, the grand people that waits so long proposed in 1985, that is, with the continuous feeding along pulley rolling Wire electrode goes to process subsequent technique electrode to be used, and greatly reduces the trueness error producing because of export license.But This method is inefficient, also can only prepare the relatively simple electrode of geometry, precision and typically also can only achieve micron order.
In sum, traditional electrode preparation precision is low, and the electrode geometry processing is relatively simple, because How this, improve electrode preparation precision and how to improve the technical problem that the shape complexity that can prepare becomes urgently to be resolved hurrily.
Content of the invention
The technical problem to be solved in the present invention is how to improve electrode preparation precision and how to improve the shape that can prepare Shape complexity.
According in a first aspect, the embodiment of the invention discloses a kind of electrode preparation method, comprising:
The substrate being used for preparing electrode is fixed on processing platform;Based region to be formed provides unstrpped gas; Based area illumination focused ion bundle to be formed, with region growing electrode to be formed.
Alternatively, focused ion bundle includes any one in gallium, helium and argon.
Alternatively, unstrpped gas includes: raw metal gas, nonmetallic unstrpped gas, conductor unstrpped gas and insulator Any one in unstrpped gas.
Alternatively, include in based area illumination focused ion bundle to be formed: by default in the way of lateral scanning The based area illumination focused ion bundle to be formed in path.
Alternatively, before based region to be formed provides unstrpped gas, also include: using electromagnetic focusing mode shape Become focused ion bundle.
Alternatively, before based area illumination focused ion bundle to be formed, also include: to for preparing electrode The region to be formed of substrate carries out planarization process.
According to second aspect, the embodiment of the invention discloses a kind of special process electrod assembly, comprising:
Substrate, for providing electrode to place position;Electrode, is grown in substrate using above-mentioned preparation method and forms.
According to the third aspect, the embodiment of the invention discloses a kind of special process platform, comprising:
Work piece holder, for providing workpiece to be processed to place position;Electrode holder, is oppositely arranged with work piece holder, is used for carrying Power pole part places position;Electrod assembly, is placed on electrode holder, places position with workpiece and is oppositely arranged;High frequency pulse power supply, For providing opposite potential to respectively workpiece to be processed and electrod assembly.
Alternatively, work fluid catheter, for providing special process working solution to workpiece to be processed and electrod assembly
Alternatively, motion platform, for driving the electrod assembly motion being placed on electrode holder, and/or is used for driving It is placed on the workpiece to be processed motion on work piece holder.
Technical solution of the present invention, has the advantage that
Electrode preparation method provided in an embodiment of the present invention and electrod assembly, due to being irradiated by based shaped region Focused ion bundle, then, provides unstrpped gas to focused ion beam irradiation in the irradiation area of substrate, thus so that focusing on Under the excitation of ion beam, there is chemical reaction in unstrpped gas, the irradiation area being then deposited in substrate is to grow in irradiation area Electrode.The mode such as grind, cut with respect in prior art and preparing electrode, on the one hand by the way of focused ion bundle, preparing electrode, Electrode precision can be improved, the precision of usual focused ion bundle can reach nanoscale;On the other hand, due to the side using growth Formula prepares electrode, abandons the mode of redundance with respect to grinding etc., more effectively can utilize raw material, thus saving electrode Preparation cost;Thereby, it is possible to prepare complicated shape three-D micro-nano meter level electrode.Electrode is prepared using growth formula, can prepare and have The three-diemsnional electrode of complicated shape, carries out complex Three-dimension process.
Special process platform provided in an embodiment of the present invention, due to using electrod assembly disclosed in above-described embodiment, because being somebody's turn to do The precision of electrod assembly is higher, thus, when the special process is carried out to workpiece to be processed, it is possible to increase the processing of workpiece to be processed Precision.
Brief description
In order to be illustrated more clearly that the specific embodiment of the invention or technical scheme of the prior art, below will be to concrete In embodiment or description of the prior art the accompanying drawing of required use be briefly described it should be apparent that, below describe in Accompanying drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not paying creative work Put, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of electrode preparation method flow chart in the embodiment of the present invention;
Fig. 2 is a kind of theory structure block diagram of electrode preparation in the embodiment of the present invention;
Fig. 3 is a kind of special process electrod assembly structural representation in the embodiment of the present invention;
Fig. 4 is a kind of special process platform structure schematic diagram in the embodiment of the present invention.
Specific embodiment
Below in conjunction with accompanying drawing, technical scheme is clearly and completely described with the enforcement it is clear that described Example is a part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill The every other embodiment that personnel are obtained under the premise of not making creative work, broadly falls into the scope of protection of the invention.
In describing the invention, it should be noted that term " " center ", " on ", D score, "left", "right", " vertical ", The orientation of instruction such as " level ", " interior ", " outward " or position relationship are based on orientation shown in the drawings or position relationship, merely to Be easy to describe the present invention and simplify description, rather than instruction or the hint device of indication or element must have specific orientation, With specific azimuth configuration and operation, therefore it is not considered as limiting the invention.Additionally, term " first ", " second ", " the 3rd " is only used for describing purpose, and it is not intended that indicating or hint relative importance.
In describing the invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or is integrally connected;Can To be to be mechanically connected or electrical connection;Can be to be joined directly together it is also possible to be indirectly connected to by intermediary, acceptable It is the connection of two element internals, can be wireless connection or wired connection.For those of ordinary skill in the art For, above-mentioned term concrete meaning in the present invention can be understood with concrete condition.
As long as additionally, the non-structure each other of involved technical characteristic in invention described below different embodiments Become conflict just can be combined with each other.
Prepare precision and improve the shape complexity that can prepare to improve electrode, present embodiment discloses a kind of electrode Preparation method, refer to Fig. 1, and for this electrode preparation method flow chart, this electrode preparation method comprises the steps:
Step s1, the substrate being used for preparing electrode is fixed on processing platform.Refer to Fig. 2, illustrate electrode preparation Theory structure, in the present embodiment, the substrate 1 (shown in Fig. 2 cuboid) being used for preparing electrode is fixed on processing platform, In specific embodiment, can be so that anchoring base 1 to be come using modes such as fixture, fixtures, in an alternate embodiment of the invention, substrate 1 adopts can The mode of dismounting is fixed on processing platform.
Step s2, based region to be formed provides unstrpped gas.In the present embodiment, alleged region to be formed is to be intended to make The region of standby electrode.In an alternate embodiment of the invention, the physical attribute according to electrode 10 to be prepared, for example, if need conduction, can To select unstrpped gas, specifically, unstrpped gas includes: raw metal gas, nonmetallic unstrpped gas, conductor unstrpped gas and Any one in insulator unstrpped gas.For ease of it will be appreciated by those skilled in the art that as an example, unstrpped gas can be example As mainly having platinum pt, carbon c, tungsten w, silicon dioxide sio2 etc..It should be noted that in specific implementation process it is also possible to according to Need to select other unstrpped gases.It should be noted that in the present embodiment, unstrpped gas can be compound or bag Mixture containing other materials.
Step s2, based area illumination focused ion bundle to be formed.Refer to Fig. 2, after anchoring base 1, can With the area illumination focused ion bundle 2 to be formed in substrate 1, alleged focused ion bundle 2 can include any in gallium, helium and argon The substrate 1 that can invade such as a kind of makes substrate 1 be subject to invade the ion that part produces secondary electron.In an alternate embodiment of the invention, gather Pyrophosphate ion bundle 2 preferably employs gallium, and it is low that Ga Element has a fusing point, be difficult oxidized thus the advantages of easily keep preferable purity. In the present embodiment, basad 1 irradiate focused ion bundle 2 after, the irradiated region of substrate 1 can produce secondary electron, by Focused ion beam irradiation region provide unstrpped gas 3, secondary electron can promote unstrpped gas 3 occur chemical vapour deposition reaction and Focused ion bundle 2 irradiation area on the base 1 deposits solid structure, it is achieved thereby that growing electrode 10 in irradiation area.
In an alternate embodiment of the invention, in execution step s3, can be basad by preset path in the way of lateral scanning Area illumination focused ion bundle 2 to be formed, as shown by the arrows in figure 2.In a particular embodiment, irradiate one in focused ion bundle 2 After the section time, unstrpped gas 3 grows into solid structure from bottom to top;Basad 1 area to be formed by way of lateral scanning Focused ion bundle 2 is irradiated in domain, it is possible to achieve the shaping of threedimensional solid structure.In a particular embodiment, the scanning of focused ion bundle 2 Path can be by external computer controls.
In an alternate embodiment of the invention, before execution step s3, also include:
S4, forms focused ion bundle using electromagnetic focusing mode.Specifically, electricity can be loaded in the region of ion beam , the positioning of the irradiation position of focused ion bundle can be realized by electric field.Generally, the beam spot of focused ion bundle is little, and diameter can With little to about 5nm, using electromagnetic mode focused ion bundle, so that the positioning precision of irradiation position is high, positioning precision reaches number Within nm.
In an alternate embodiment of the invention, automatically control scanning pattern by external computer, by high-precision electromagnetic mode Focus on so that can prepare within characteristic size reaches 100nm, there is the micro/nano level electrode of high complexity 3D shape so that Edm or ecdm carrying out micro-nano-scale is provided with probability.
In an alternate embodiment of the invention, before execution step s2, can also include: to treating of the substrate for preparing electrode Shaped region carries out planarization process, thus the precision of electrode is prepared in raising.
For ease of it will be appreciated by those skilled in the art that the physical and chemical process of explanation electrode preparation here, refer to Fig. 2, former Material gas gun, towards the indoor substrate material surface sustained firing unstrpped gas of vacuum, is then focused into ion beam towards electrode to be prepared Substrate surface position irradiate.Because substrate is subject to invading of the ion of focused ion bundle, substrate surface will have low-energy 2 times Electronics (secondary electron) and the atom that rebounds (recoiled atom) produce.These low-energy particles promote former Material gas occurs chemical vapour deposition reaction to deposit solid structure at suprabasil focused ion beam irradiation position.Enter one Step ground, by the scanning route of precise control focused ion bundle, above-mentioned physical and chemical process repeatedly, just can prepare various multiple Miscellaneous three-D micro-nano electrode.
The present embodiment also discloses a kind of special process electrod assembly, refer to Fig. 3, for this special process electrod assembly knot Structure schematic diagram, this special process electrod assembly includes: substrate 1 and electrode 10, wherein:
Substrate 1 is used for providing electrode to place position;Electrode 10 is placed on position using the electrode that growth pattern is formed in substrate 1, Specifically, can be grown in substrate using preparation method disclosed in above-described embodiment and form.
The present embodiment also discloses a kind of special process platform, and this special process platform is applied to spark machined (edm) With electrochemical discharge Compound Machining (ecdm).Refer to Fig. 4, illustrate for this special process platform structure, this special process platform bag Include: work piece holder 100, electrode holder 200, electrod assembly 300 and high frequency pulse power supply 400, wherein:
Work piece holder 100 is used for providing workpiece to be processed a to place position.In a particular embodiment, work piece holder 100 can be adopted Fix workpiece to be processed a with modes such as folder, cards, in other embodiments, according to the characteristic of workpiece a, it would however also be possible to employ other Mode is fixed, for example bolted mode etc..
Electrode holder 200 is oppositely arranged with work piece holder 100, for providing electrod assembly 300 to place position.Similarly, exist In specific embodiment, electrode holder 200 can with using folder, card etc. mode carry out fixed electrode component 300, in other embodiments, Characteristic according to electrod assembly 300 substrate, it would however also be possible to employ alternate manner is fixed, for example bolted mode etc..
Electrod assembly 300 is placed on electrode holder 200, places position with workpiece and is oppositely arranged, so that electrod assembly 300 Electrode can with workpiece place position on workpiece a relative, produce physical action, for example generation electric spark.
High frequency pulse power supply 400 is used for providing opposite potential to workpiece to be processed and electrod assembly respectively.In the present embodiment, By to workpiece to be processed a and electrod assembly 300 offer opposite potential so that putting between the electrode of electrod assembly 300 and workpiece a Electricity produces electric spark, it is achieved thereby that the spark machined to workpiece a.
In an alternate embodiment of the invention, this special process platform also includes: work fluid catheter 400, and work fluid catheter 400 is used for There is provided special process working solution to workpiece to be processed and electrod assembly.In a particular embodiment, can be according to the work of the special process Plant and the working solution of offer to be provided, the spark machined for pure electric discharge is it is provided that the working solution of insulation, for example oily, pure Water etc.;For Compound Machining, the special process discharging not only but also be electrolysed is it is provided that the working solution of conduction, such as deionized water Deng.
In an alternate embodiment of the invention, this special process platform also includes: motion platform 500, motion platform 500 is used for driving It is placed on the electrod assembly motion on electrode holder, and/or for driving the workpiece to be processed motion being placed on work piece holder. In a particular embodiment, moving platform 500, when drive electrode part and/or workpiece to be processed move, can be respectively along x, y, z Axial translation is it is also possible to rotating around the axial rotation of x, y, z.In the present embodiment, motion platform 500 can be with micro-nano The stepping forward travel of level, obtains the discharge position between micro/nano level electrode and workpiece.
In an alternate embodiment of the invention, when drive electrode part and/or workpiece to be processed move, ultrasonic shaking can also be carried out Dynamic, to improve the chip removal ability of process residues, reduce short-circuit probability.
In an alternate embodiment of the invention, according to actual needs it is also possible to arrange work below the outlet of work fluid catheter 400 Liquid accumulator tank, to reclaim to the working solution after processing.
In an alternate embodiment of the invention it is also possible to by above-mentioned part such as motion platform 500, work piece holder 100, electrode holder 200th, electrod assembly 300 etc. is arranged on fixing workbench, to prevent from undesirable relative movement in process Etc. phenomenon.
Electrode preparation method provided in an embodiment of the present invention and electrod assembly, due to being irradiated by based shaped region Focused ion bundle, then, provides unstrpped gas to focused ion beam irradiation in the irradiation area of substrate, thus so that focusing on Under the excitation of ion beam, there is chemical reaction in unstrpped gas, the irradiation area being then deposited in substrate is to grow in irradiation area Electrode.The mode such as grind, cut with respect in prior art and preparing electrode, on the one hand by the way of focused ion bundle, preparing electrode, Electrode precision can be improved, the precision of usual focused ion bundle can reach nanoscale;On the other hand, due to the side using growth Formula prepares electrode, abandons the mode of redundance with respect to grinding etc., more effectively can utilize raw material, thus saving electrode Preparation cost.Additionally, electrode is prepared using growth formula, the three-diemsnional electrode with complicated shape can be prepared, carry out complex Three-dimension process.
Special process platform provided in an embodiment of the present invention, due to using electrod assembly disclosed in above-described embodiment, because being somebody's turn to do The precision of electrod assembly is higher, thus, when the special process is carried out to workpiece to be processed, it is possible to increase the processing of workpiece to be processed Precision.
Obviously, above-described embodiment is only intended to clearly illustrate example, and the not restriction to embodiment.Right For those of ordinary skill in the art, can also make on the basis of the above description other multi-forms change or Change.There is no need to be exhaustive to all of embodiment.And the obvious change thus extended out or Change among still in the protection domain of the invention.

Claims (10)

1. a kind of electrode preparation method is it is characterised in that comprise the steps:
The substrate being used for preparing electrode is fixed on processing platform;
There is provided unstrpped gas to the region to be formed of described substrate;
To the area illumination focused ion bundle to be formed of described substrate, with described region growing electrode to be formed.
2. electrode preparation method as claimed in claim 1 is it is characterised in that described focused ion bundle is included in gallium, helium and argon Any one.
3. electrode preparation method as claimed in claim 1 is it is characterised in that described unstrpped gas includes: raw metal gas, Any one in nonmetallic unstrpped gas, conductor unstrpped gas and insulator unstrpped gas.
4. the electrode preparation method as described in claim 1-3 any one is it is characterised in that in described treating to described substrate Shaped region irradiates focused ion bundle and includes:
Press the area illumination focused ion bundle to be formed to described substrate for the preset path in the way of lateral scanning.
5. the electrode preparation method as described in claim 1-4 any one is it is characterised in that in described treating to described substrate Before shaped region irradiates focused ion bundle, also include:
Described focused ion bundle is formed using electromagnetic focusing mode.
6. the electrode preparation method as described in claim 1-5 any one is it is characterised in that in described treating to described substrate Before shaped region provides unstrpped gas, also include:
Planarization process is carried out to the region to be formed of the described substrate for preparing electrode.
7. a kind of special process electrod assembly is it is characterised in that include:
Substrate, for providing electrode to place position;
Electrode, is grown on the substrate using the preparation method as described in claim 1-6 any one and forms.
8. a kind of special process platform is it is characterised in that include:
Work piece holder, for providing workpiece to be processed to place position;
Electrode holder, is oppositely arranged with described work piece holder, for providing electrod assembly to place position;
Electrod assembly, is placed on described electrode holder, places position with described workpiece and is oppositely arranged;
High frequency pulse power supply, for providing opposite potential to respectively described workpiece to be processed and described electrod assembly.
9. special process platform as claimed in claim 8 is it is characterised in that also include:
Work fluid catheter, for providing special process working solution to described workpiece to be processed and described electrod assembly.
10. special process platform as claimed in claim 8 or 9 is it is characterised in that also include:
Motion platform, for driving the described electrod assembly motion being placed on described electrode holder, and/or places for driving Workpiece to be processed motion on described work piece holder.
CN201610979028.3A 2016-11-04 2016-11-04 Electrode preparation method, electrod assembly and special process platform Active CN106346093B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610979028.3A CN106346093B (en) 2016-11-04 2016-11-04 Electrode preparation method, electrod assembly and special process platform

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610979028.3A CN106346093B (en) 2016-11-04 2016-11-04 Electrode preparation method, electrod assembly and special process platform

Publications (2)

Publication Number Publication Date
CN106346093A true CN106346093A (en) 2017-01-25
CN106346093B CN106346093B (en) 2019-03-22

Family

ID=57861383

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610979028.3A Active CN106346093B (en) 2016-11-04 2016-11-04 Electrode preparation method, electrod assembly and special process platform

Country Status (1)

Country Link
CN (1) CN106346093B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60108212A (en) * 1983-11-16 1985-06-13 Mitsubishi Electric Corp Electrode for electric discharge machining and manufacturing method thereof
JP2002066844A (en) * 2000-08-31 2002-03-05 Oki Electric Ind Co Ltd Method of manufacturing discharge machining electrode using metal powder sintering type laminated molding
CN1603807A (en) * 2004-11-24 2005-04-06 中国科学院物理研究所 Test electrode for single unidimensional nano material and fabricating method thereof
CN101653847A (en) * 2009-09-15 2010-02-24 天津大学 Method and system for machining micro-nano hole by electron discharge
CN102320566A (en) * 2011-10-14 2012-01-18 中国科学院物理研究所 Method for preparing three-dimensional nano space electrode by adopting self-alignment forming
CN105502276A (en) * 2016-01-06 2016-04-20 中国科学院物理研究所 Method for preparing test electrodes on microparticles

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60108212A (en) * 1983-11-16 1985-06-13 Mitsubishi Electric Corp Electrode for electric discharge machining and manufacturing method thereof
JP2002066844A (en) * 2000-08-31 2002-03-05 Oki Electric Ind Co Ltd Method of manufacturing discharge machining electrode using metal powder sintering type laminated molding
CN1603807A (en) * 2004-11-24 2005-04-06 中国科学院物理研究所 Test electrode for single unidimensional nano material and fabricating method thereof
CN101653847A (en) * 2009-09-15 2010-02-24 天津大学 Method and system for machining micro-nano hole by electron discharge
CN102320566A (en) * 2011-10-14 2012-01-18 中国科学院物理研究所 Method for preparing three-dimensional nano space electrode by adopting self-alignment forming
CN105502276A (en) * 2016-01-06 2016-04-20 中国科学院物理研究所 Method for preparing test electrodes on microparticles

Also Published As

Publication number Publication date
CN106346093B (en) 2019-03-22

Similar Documents

Publication Publication Date Title
CN109735883B (en) Device and method for micro electro-deposition of laser-assisted flexible follow-up tool electrode
CN100591452C (en) Distributed arc electroerosion
CN104108054B (en) Large complicated metal surface plasma body and pulsed discharge composite polishing processing device
CN108705164A (en) Rotary ultrasonic assist electrochemical grinding reaming processing unit (plant) and method
CN102166676A (en) Method and device for machining insulating ceramic by reciprocating wire-cut electrical discharge machining
CN102019572B (en) Polishing process adopting combined spiral polishing path
CN102794516A (en) Blisk blade profile subtle electrochemical machining electrode and machining method
CN104227156B (en) A kind of online preparation method of lateral wall insulation micro tool electrode based on differential arc oxidation
CN104772535B (en) Open three dimensional runner high speed arc spraying discharge layer sweeps processing method
CN103801771B (en) High-speed cutting electro-discharge machining method
CN108526824A (en) A kind of micropore combined machining method
CN104108053A (en) Plasma and pulse discharge composite polishing method for large-scale complicated metal surface
CN103231134A (en) Electrolytic wire cut electric discharge machining device and electrolytic wire cut electric discharge machining method of non-conducting materials
CN107900787A (en) A kind of plasma oxidation assistant grinding apparatus and method
CN114523165A (en) Laser-enhanced ultrasonic electrolytic composite processing method and device for preparing array holes in semiconductor material
CN106346093A (en) Electrode preparing method, electrode component and special processing platform
CN109048088A (en) A kind of method and device of Long Pulse LASER and plasma jet Compound Machining micropore
CN109097744B (en) Pulse magnetic filtration and deposition device
Habib et al. Performance analysis of EDM electrode fabricated by localized electrochemical deposition for micro-machining of stainless steel
CN207464378U (en) Multiaxis multifunctional thread cutting off machine
CN103008809A (en) Combined machining method of metal materials
CN203901020U (en) Polishing and machining device for metal surfaces
CN103817388B (en) A kind of device for preparing the fine milling cutter of screw type hard alloy
CN109909569B (en) Method and device for processing high-precision micropores
Habib et al. Modelling for fabrication of microelectrodes by localized electrochemical deposition for micro-electrodischarge machining

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant