CN106336933A - 一种硅片切割用降温去糙型切削液的制备方法 - Google Patents
一种硅片切割用降温去糙型切削液的制备方法 Download PDFInfo
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Abstract
一种硅片切割用降温去糙型切削液,涉及硅材料加工技术领域,由以下重量份的原料制成:石蜡基油60‑80份、八角油6‑8份、硝酸钾5‑7份、三乙醇胺1‑3份、甘油2‑4份、聚乙二醇1‑3份、蓖麻油酸1‑3份、表面活性剂2‑4份、氢氧化钠1‑3份、硅酸钠2‑4份、硼酸脂2‑4份、甲基硅油2‑4份、过氧化氢2‑4份、苯并三氮唑1‑3份、苯甲酸钠2‑4份、癸二酸1‑3份、酒精25‑35份、助磨剂2‑4份。本发明的有益效果是:本发明配方选取科学合理,选用的原料均为廉价易得的产品,制备出的切削废液,内部本身含有降温将解的功效,可以对硅片切割时产生的热量进行吸附,同时内部助磨剂的添加,保证切割时硅片的平整平滑性能,不会对硅片本身造成物理伤害,安全彻底,同时环保健康,便于推广及使用。
Description
技术领域
本发明涉及硅材料加工技术领域,具体涉及一种硅片切割用降温去糙型切削液的制备方法。
背景技术
硅材料,是重要的半导体材料,化学元素符号Si,电子工业上使用的硅应具有高纯度和优良的电学和机械等性能,硅是产量最大、应用最广的半导体材料,它的产量和用量标志着一个国家的电子工业水平,单晶硅在太阳能电池中的应用,高纯的单晶硅是重要的半导体材料。在光伏技术和微小型半导体逆变器技术飞速发展的今天,利用硅单晶所生产的太阳能电池可以直接把太阳能转化为光能,实现了迈向绿色能源革命的开始。
硅片是硅材料存在的一种物理形式,在正常的应用中,硅片,是制作集成电路的重要材料,通过对硅片进行光刻、离子注入等手段,可以制成各种半导体器件。用硅片制成的芯片有着惊人的运算能力,科学技术的发展不断推动着半导体的发展,自动化和计算机等技术发展,使硅片这种高技术产品的造价已降到十分低廉的程度,然而硅片在加工时,不同的工艺节点都会使得硅片加工出现瑕疵。
硅片加工时,是通过相应的硅碇进行切割成的片状物品,这种硅碇通常在切割时,为了保证其相应的切割精度及平整度,通常都需要使用一些润滑类的添加剂,保证其精度,但是实际在使用中,大多数都是采用普通的切削液进行替代,这种普通切削液在使用时,针对于硅片这种精密材料有一定的影响,切割后会在硅片上遗留有部分划痕,并且在实际的使用中,切削液温度过高,导致硅片实际的质地受到一定的影响。
发明内容:
本发明所要解决的技术问题在于提供一种原料易得,配方合理精确,使用效果好的硅片切割用降温去糙型切削液的制备方法。
本发明所要解决的技术问题采用以下技术方案来实现:
一种硅片切割用降温去糙型切削液,其特征在于,由以下原料制成:
石蜡基油60-80份、八角油6-8份、硝酸钾5-7份、三乙醇胺1-3份、甘油2-4份、聚乙二醇1-3份、蓖麻油酸1-3份、表面活性剂2-4份、氢氧化钠1-3份、硅酸钠2-4份、硼酸脂2-4份、甲基硅油2-4份、过氧化氢2-4份、苯并三氮唑1-3份、苯甲酸钠2-4份、癸二酸1-3份、酒精25-35份、助磨剂2-4份。
各原料的优选分离为:石蜡基油70份、八角油7份、硝酸钾6份、三乙醇胺2份、甘油3份、聚乙二醇2份、蓖麻油酸2份、表面活性剂3份、氢氧化钠2份、硅酸钠3份、硼酸脂3份、甲基硅油3份、过氧化氢2份、苯并三氮唑2份、苯甲酸钠3份、癸二酸2份、酒精30份、助磨剂3份。
所述的的助磨剂通过采用滑石粉、石墨粉、白炭黑按照3:1:1的量复配后研磨而成,其颗粒直径为20-25um;
本发明的另一目的是制备本发明中硅片切割用降温去糙型切削液的方法,其特征在于,包括以下步骤:
1)取三乙醇胺、甘油和聚乙二醇放入反应釜中,升温至65-70℃,然后将石蜡基油、八角油和硝酸钾加入其中,搅拌2-3h后,冷却后,出料备用;
2)将原料中的蓖麻油酸、表面活性剂、氢氧化钠、硅酸钠和硼酸脂烷预混合后,进行常温搅拌后,得到辅助液,备用;
3)取一搅拌罐,将原料中的甲基硅油、过氧化氢、苯并三氮唑、苯甲酸钠、癸二酸和酒精加入其中,然后升温至35-45℃,搅拌1-2h后,将步骤2中的原料加入其中,升温至60-80℃,继续搅拌30-40min后,降温至20-25℃,将步骤1中的物料加入其中,再次持续搅拌3-5h后,出料;
4)将原料中的助磨剂混合于步骤3中的物料中,充分搅拌直至均匀后,即可得到。
本发明的有益效果是:本发明配方选取科学合理,选用的原料均为廉价易得的产品,制备出的切削废液,内部本身含有降温将解的功效,可以对硅片切割时产生的热量进行吸附,同时内部助磨剂的添加,保证切割时硅片的平整平滑性能,不会对硅片本身造成物理伤害,安全彻底,同时环保健康,便于推广及使用。
具体实施方式
为了使本发明实现的技术手段、创作特征、达成目的与功效易于明白了解,下面结合具体实施例,进一步阐述本发明。
实施例1
称取:石蜡基油60kg、八角油6kg、硝酸钾5kg、三乙醇胺1kg、甘油2kg、聚乙二醇1kg、蓖麻油酸1kg、表面活性剂2kg、氢氧化钠1kg、硅酸钠2kg、硼酸脂2kg、甲基硅油2kg、过氧化氢2kg、苯并三氮唑1kg、苯甲酸钠2kg、癸二酸1kg、酒精25kg、助磨剂2kg;
实施例2
称取:石蜡基油70kg、八角油7kg、硝酸钾6kg、三乙醇胺2kg、甘油3kg、聚乙二醇2kg、蓖麻油酸2kg、表面活性剂3kg、氢氧化钠2kg、硅酸钠3kg、硼酸脂3kg、甲基硅油3kg、过氧化氢2kg、苯并三氮唑2kg、苯甲酸钠3kg、癸二酸2kg、酒精30kg、助磨剂3kg;
制备上述实施例1或2的方法为:
1)取三乙醇胺、甘油和聚乙二醇放入反应釜中,升温至65-70℃,然后将石蜡基油、八角油和硝酸钾加入其中,搅拌2-3h后,冷却后,出料备用;
2)将原料中的蓖麻油酸、表面活性剂、氢氧化钠、硅酸钠和硼酸脂烷预混合后,进行常温搅拌后,得到辅助液,备用;
3)取一搅拌罐,将原料中的甲基硅油、过氧化氢、苯并三氮唑、苯甲酸钠、癸二酸和酒精加入其中,然后升温至35-45℃,搅拌1-2h后,将步骤2中的原料加入其中,升温至60-80℃,继续搅拌30-40min后,降温至20-25℃,将步骤1中的物料加入其中,再次持续搅拌3-5h后,出料;
4)将原料中的助磨剂混合于步骤3中的物料中,充分搅拌直至均匀后,即可得到。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。
Claims (4)
1.一种硅片切割用降温去糙型切削液,其特征在于,由以下原料制成:
石蜡基油60-80份、八角油6-8份、硝酸钾5-7份、三乙醇胺1-3份、甘油2-4份、聚乙二醇1-3份、蓖麻油酸1-3份、表面活性剂2-4份、氢氧化钠1-3份、硅酸钠2-4份、硼酸脂2-4份、甲基硅油2-4份、过氧化氢2-4份、苯并三氮唑1-3份、苯甲酸钠2-4份、癸二酸1-3份、酒精25-35份、助磨剂2-4份。
2.根据权利要求1所述的一种硅片切割用降温去糙型切削液,其特征在于,各原料的优选分离为:石蜡基油70份、八角油7份、硝酸钾6份、三乙醇胺2份、甘油3份、聚乙二醇2份、蓖麻油酸2份、表面活性剂3份、氢氧化钠2份、硅酸钠3份、硼酸脂3份、甲基硅油3份、过氧化氢2份、苯并三氮唑2份、苯甲酸钠3份、癸二酸2份、酒精30份、助磨剂3份。
3.根据权利要求1所述的一种硅片切割用降温去糙型切削液,其特征在于:所述的的助磨剂通过采用滑石粉、石墨粉、白炭黑按照3:1:1的量复配后研磨而成,其颗粒直径为20-25um。
4.制备上述权利要求1或2的方法,其特征在于,包括以下制备步骤:
1)取三乙醇胺、甘油和聚乙二醇放入反应釜中,升温至65-70℃,然后将石蜡基油、八角油和硝酸钾加入其中,搅拌2-3h后,冷却后,出料备用;
2)将原料中的蓖麻油酸、表面活性剂、氢氧化钠、硅酸钠和硼酸脂烷预混合后,进行常温搅拌后,得到辅助液,备用;
3)取一搅拌罐,将原料中的甲基硅油、过氧化氢、苯并三氮唑、苯甲酸钠、癸二酸和酒精加入其中,然后升温至35-45℃,搅拌1-2h后,将步骤2中的原料加入其中,升温至60-80℃,继续搅拌30-40min后,降温至20-25℃,将步骤1中的物料加入其中,再次持续搅拌3-5h后,出料;
4)将原料中的助磨剂混合于步骤3中的物料中,充分搅拌直至均匀后,即可得到。
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