CN103474501A - Selective emitter gallium antimonide infrared battery and manufacturing method thereof - Google Patents
Selective emitter gallium antimonide infrared battery and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses a selective emitter gallium antimonide infrared battery and a manufacturing method thereof. The method comprises the steps of p-n junction preparing in a zinc diffusion mode, electrode preparing, surface passivating, antireflection layer preparing and the like. The method is characterized in that zinc-gallium alloy is utilized as a diffusion source to conduct seal type zinc diffusion so that a zinc concentration curve only having a single diffusion front edge can be formed in an N-type gallium antimonide chip. According to the method, a high-concentration diffusion layer on the surface of the gallium antimonide chip after diffusion can be effectively restrained, and the problem that accurate corrosion is difficult to control in a traditional diffusion process is solved. According to the method, no protective gas needs to be added in a p-n junction preparing process, and cost of the gallium antimonide infrared battery is lowered. According to the selective emitter gallium antimonide infrared battery made in the method, the zinc concentration curve only having the single diffusion front edge in the selective emitter gallium antimonide infrared battery is directly formed through diffusion, and a corrosion process is not needed. Therefore, electrical output properties of the selective emitter gallium antimonide infrared battery are stable, and the selective emitter gallium antimonide infrared battery can be used as an electricity converting element in an infrared photovoltaic conversion system.
Description
Technical field
The invention belongs to the infrared cell technical field, be specifically related to selective emitter gallium antimonide infrared cell and preparation method thereof.
Background technology
The energy gap of gallium antimonide is 0.72eV, and the near-infrared radiation that the infrared cell that adopts the gallium antimonide wafer to prepare can produce fuel combustion can directly be converted to electric energy.When ignition temperature is 1200 ℃ of left and right, the unit area output of battery can reach 1.5～2W/cm
2.Adopt the infrared electro conversion system of gallium antimonide battery as electric energy output element, can be used as military individual soldier's power supply, military communication power supply and geologic prospect, the institute of protecting a forest, field study power supply, there is the advantages such as light, quiet.
According to U.S. Pat 005091018A introduction, gallium antimonide infrared cell preparation process generally includes wafer cleaning, preparation surrounding diffusion impervious layer, zinc diffusion preparation P-N knot, depositing electrode, prepare the step such as antireflective coating.Wherein, adopt the zinc diffusion method to prepare the P-N knot the most key, all the other steps are common semiconductor processes.Existing gallium antimonide infrared cell zinc diffusing method used is mainly the open type diffusion method that adopts zinc-antimony alloy, and this technique will be at the inner zinc concentration curve with two diffusion fronts that forms of gallium antimonide wafer.In this type diffusion profile, first diffusion front zone of close wafer surface is dark and zinc concentration is very high, higher zinc concentration can make between upper surface electrode and gallium antimonide wafer to form good ohmic contact, yet the light area at battery, higher zinc concentration can reduce the life-span of photo-generated carrier, reduce the quantum efficiency of battery, short circuit current is descended.Therefore after preparing electrode, need to adopt corrosive liquid accurately to erode near first diffusion front zone of wafer surface, battery just can reach 70% left and right in the averaged spectrum responsiveness of near infrared band.And this corrosion process is very difficult to control, describe like this this corrosion process in the U.S. Pat 005091018A of the gallium antimonide infrared cell technique institute foundation of having produced in batches and US005217539A: " corrosion process of emitter is very consuming time, and is not easy automatic control.Every battery all needs that burn into cleans, test, burn into cleans again again, burn into is tested again again, until test out the spectral responsivity of battery, rises to setting.This corrosion process need to repeat many times, and the performance of battery can reach requirement, if corrosion once too much, the decline that the open circuit voltage of battery can be sharply so, if corrosion is too shallow, the optimum spectral responsivity of battery does not reach again.”
According to U.S. Pat 005217539A introduction; in order to change corrosion process shortcoming rambunctious in the battery preparation technique process; U.S. JXC company has developed two step diffusion methods; first at battery surface, carry out shallow diffusion; then the light accepting part of battery surface is divided with photoresist and protects; the exposed secondary that out carries out of the part that needs depositing electrode is spread deeply; what below the battery upper surface electrode, carry out like this is dark doping; can form good ohmic contact with the gallium antimonide wafer; it is shallow doping that the battery surface light accepting part divides what carry out, and quantum efficiency is higher.Gallium antimonide battery efficiency prepared by these class methods is higher, even but the battery surface light accepting part divides employing shallow diffusion, because diffusion way remains the open type of employing zinc-antimony alloy, the diffusion layer that wafer surface still has high concentration exists, and can not tackle the problem at its root.And, while adopting this technique to prepare the gallium antimonide battery, can increase by one diffusion and photoetching process, thereby make the preparation cost of battery increase.
As can be seen here, when large-scale production gallium antimonide infrared cell, the zinc diffusion profile pattern of gallium antimonide wafer surface has material impact to battery performance.
Summary of the invention
The objective of the invention is to propose a kind of selective emitter gallium antimonide infrared cell and preparation method thereof, to simplify traditional single step zinc diffusion method, prepare battery unmanageable etching process afterwards, make the electricity output performance of every batch of battery stable.
The preparation method of selective emitter gallium antimonide infrared cell of the present invention, comprise that gallium antimonide wafer cleaning, front wafer surface periphery prepare silicon dioxide diffusing protection layer, adopt the zinc diffusion method to prepare PN junction, remove the back side and periphery P type layer, prepare electrode, surface passivation, prepare antireflection layer; It is characterized in that: adopt zinc-gallium alloy to carry out sealed type zinc as diffuse source and be diffused in N-type gallium antimonide wafer and form the zinc concentration curve that only there is single diffusion front, specifically comprise the steps:
The first step, will be 2～7 * 10 containing tellurium Te concentration
17cm
-3,<100>crystal orientation N-type gallium antimonide wafer is successively inserted successively in dimethylbenzene, acetone and ethanol and is cleaned, and the watery hydrochloric acid that is then 5～20% by quality than concentration is removed the oxide of wafer surface, after finally cleaning in deionized water, with nitrogen, dries up;
Second step, on wafer the thick silicon dioxide layer of using plasma chemical vapour deposition technique deposition one deck 0.11 μ m, then adopt photoetching process to define the diffusion zone of center wafer, and the silicon dioxide layer of this central area is soaked and removes with corrosive liquid, obtain can be used to carry out the gallium antimonide wafer of zinc diffusion, i.e. diffusion preparation gallium antimonide wafer; This is used for soaking the corrosive liquid of removing silicon dioxide is conventional formulation, and by hydrofluoric acid 3ml: ammonium fluoride 6g: deionized water 10ml carries out proportioning;
The 3rd step, the diffusion for preparing in second step preparation gallium antimonide wafer and diffuse source zinc-gallium alloy are put into to the quartz ampoule of diffusion furnace; be evacuated to 5～10Pa, argon gas to the quartz ampoule internal pressure that to pass into flow be 1～3L/min returns to an atmospheric pressure; Then close the argon gas valve and continue to be evacuated to 5～10Pa; close the valve that connects vacuum pump and keep the vacuum state in quartz ampoule; heating rate with 5～10 ℃/min rises to 450～500 ℃, keeps said temperature 1～3h, makes zinc fume diffuse into wafer inside; Maintain the process end of constant high temperature in diffusion furnace after, open the diffusion furnace top cover, adopt built-in fan in diffusion furnace to be quickly cooled to room temperature to finish diffusion process, take out afterwards the gallium antimonide wafer after spreading, be the inner N-type gallium antimonide wafer that only there is single diffusion front zinc curve;
The 4th step, employing spin coating technique protect the N-type gallium antimonide front wafer surface that only has single diffusion front zinc curve obtained in the 3rd step with photoresist, immersing proportioning is tartaric acid 3.5g: hydrogen peroxide 4mL: hydrofluoric acid 1mL: the use of deionized water 400mL removes 1～3min in the corrosive liquid of P type layer at wafer perimeter and the back side, then with acetone soln, soaks the removal photoresist; Then as substrate, adopt the method for magnetron sputtering to be prepared into the electrode of battery: at first successively at the backside deposition Ti50nm/Pt50nm/Ag250nm of this substrate as backplate, and 1～10 * 10
-4be heated to 280 ℃ under the vacuum degree condition of Pa, keep 10min; Then define in the front of this substrate the zone that needs depositing electrode by photoetching process, expose the zone that need to prepare electrode and will produce photoelectric zone and cover with photoresist, then deposit successively Pt50nm/Ag250nm as front electrode in the front of this substrate, the thin layer that finally adopts peel off-lift-off technology that battery front side is produced to the photoelectric effect zone is removed, and prepares the upper/lower electrode of battery;
The 5th step, will prepare gallium antimonide battery after upper/lower electrode and put into ammonium sulfide solution and soak 5～10min, carry out surface passivation;
The silicon nitride layer that the 6th step, using plasma chemical vapour deposition technique deposit one deck 0.15 μ m at battery front side, as antireflective coating, obtains selective emitter gallium antimonide infrared cell.
The preparation method of described zinc-gallium alloy diffuse source is: will be the 3% purity zinc that is 99.9999% containing weight ratio inserts in quartz ampoule with the gallium that containing weight ratio is 97%, purity is 99.9999% simultaneously, after being evacuated to 5～10Pa sealing, put into heating furnace and be heated to 600 ℃ and keep 24h, so that two kinds of elements fully mix, obtain zinc required for the present invention-gallium diffuse source after cooling.
The selective emitter gallium antimonide infrared cell of the present invention that adopts said method to prepare, comprise: the gallium antimonide wafer that forms PN junction with surperficial zinc diffusion layer, the below of this wafer adopts Ti/Pt/Ag as backplate, the top of wafer adopts Pt/Ag as positive electrode, and deposits the silicon dioxide antireflection layer above this positive electrode; It is characterized in that: inner 95% zone of the zinc diffusion layer of this battery is above is that concentration is lower than 10
20cm
-3atoms/cm
-3single diffusion front zinc concentration curve, and above-mentioned pattern curve is directly to form after zinc diffusion.
Principle of the present invention is: due to the self-diffusion rate of gallium atom in GaSb crystal than much larger times of the self-diffusion rate of antimony atoms, in high-temperature diffusion process, if there is no the gallium atom in diffuse source, the gallium atom in the gallium antimonide wafer just there will be the situation of overflowing in a large number so.In this case, zinc atom can be spread by the mode that occupies gallium room in the gallium antimonide wafer, until zinc is diffused into the concentration value in gallium room in gallium antimonide while being less than its heat balance value in crystal, just by the mode of kicking out of gallium atom in lattice, spread, will form by occupying the zinc spread in the gallium room diffusion zone that shows high concentration like this, and for preparing battery usefully to kick out of the afterbody zinc diffusion zone that in lattice, the gallium atomic way diffuses to form.Traditional employing zinc-antimony alloy is as the open type diffusion method of diffuse source, reference be that zinc spreads in GaAs that the arsenic atom easily overflows and the method that enters arsenic element in diffuse source, and be that the group iii elements gallium easily overflows on the contrary in GaSb crystal, so in diffuse source, add antimony atoms not have great impact to diffusion profile.And the sealed type diffusion method with zinc-gallium alloy diffuse source adopted in the preparation method of selective emitter gallium antimonide infrared cell of the present invention, existence due to the gallium atom in diffuse source, effectively contain in the diffusion process overflowing of gallium atom in GaSb crystal, thereby contained the generation of surperficial Treatment with High Concentration Zinc diffusion layer.
Based on above principle, zinc-the gallium alloy adopted in the present invention is compared as the open type diffusion method of diffuse source with traditional zinc-antimony alloy as the sealed type zinc diffusion method of diffuse source, have the following advantages: the high concentration diffusion layer that can effectively contain the rear gallium antimonide wafer surface of diffusion, solve after the conventional diffusion process the accurately unmanageable problem of corrosion, make the electric property of the gallium antimonide infrared cell produced keep stable; Adopt this zinc diffusing method proposed in the preparation method of selective emitter gallium antimonide infrared cell of the present invention; only need to pass through a small amount of argon gas as flushing gas in the process vacuumized; and do not need to pass into any protective gas in diffusion process; therefore, adopt preparation method of the present invention can also reduce the preparation cost of gallium antimonide infrared cell.
The selective emitter gallium antimonide infrared cell of the present invention that adopts the inventive method to prepare, because single diffusion front zinc concentration curve negotiating of this inside battery directly diffuses to form, and the inner 95% above concentration in zone of the zinc diffusion layer of this battery is lower than 10
20cm
-3atoms/cm
-3single diffusion front zinc concentration curve, but thereby the photoproduction minority carrier life time of generation current can not reduce because doping content is too high, therefore can effectively the near infrared band photon be converted to electric energy; And the gallium antimonide inside battery that adopts traditional zinc diffusion technology to prepare has the double diffusion forward position zinc curve of surperficial high concentration layer, must surperficial high concentration diffusion front be removed and can improve few sub life-span of photoproduction by accurate etch, because corrosion process is difficult to the zinc diffusion profile difference that control makes the inside battery of different batches have, can cause the cell output of different batches unstable, be unfavorable for preparing battery component.
The accompanying drawing explanation
Fig. 1 is the required diffusion system sketch of sealed type diffusion method of zinc-gallium alloy of adopting in the present invention.
Fig. 2 is the diffusion profile and the diffusion profile comparison diagram of traditional zinc-antimony alloy as the open type zinc diffusion method acquisition of diffuse source that the present invention adopts the sealed type diffusion method of zinc-gallium alloy to obtain.
Fig. 3 is the gallium antimonide infrared cell structural representation that adopts traditional open type method of diffusion to prepare.
Fig. 4 is the gallium antimonide infrared cell structural representation that the present invention adopts the sealed type method of diffusion to prepare.
Fig. 5 is the internal quantum efficiency figure of the present invention's gallium antimonide infrared cell of adopting the sealed type method of diffusion to prepare.
Embodiment
Embodiment 1:
Fig. 1 has provided the sealed type diffusion method required diffusion system sketch that the present invention adopts zinc-gallium alloy.Introduce the zinc scattering preparation of the selective emitter gallium antimonide infrared cell in the present embodiment below in conjunction with accompanying drawing, specifically comprise the steps:
The first step, will be 2～7 * 10 containing tellurium Te concentration
17cm
-3,<100>crystal orientation N-type gallium antimonide wafer is successively inserted successively in dimethylbenzene, acetone and ethanol and is cleaned, and the watery hydrochloric acid that is then 5～20% by concentration is removed the wafer surface oxide, after finally cleaning in deionized water, with nitrogen, dries up;
Second step, on wafer the silicon dioxide layer of using plasma chemical vapour deposition technique deposition one deck 0.11 μ m thickness, then adopt photoetching process to define the diffusion zone of center wafer, and the silicon dioxide layer of this central area is soaked and removes with corrosive liquid, obtain can be used to carry out the gallium antimonide wafer of zinc diffusion, i.e. diffusion preparation gallium antimonide wafer; This is used for soaking the corrosive liquid of removing silicon dioxide is conventional formulation, and by hydrofluoric acid 3ml: ammonium fluoride 6g: deionized water 10ml carries out proportioning;
The 3rd step, as shown in fig. 1: the diffusion preparation gallium antimonide wafer 2 prepared in diffuse source zinc-gallium alloy 1 and second step is put into to quartz ampoule 3, close the valve 4 that connects argon gas 6, open the valve 5 that connects vacuum pump 7, quartz ampoule is evacuated to 5～10Pa; Then valve-off 5, open valve 4, and the argon gas that to pass into flow be 1～3L/min is until the quartz ampoule internal pressure rises to an atmospheric pressure.Valve-off 4, open valve 5 and again vacuumized, and then valve-off 5 is to keep the vacuum state in quartz ampoule; Whole quartz ampoule 3 all is placed in diffusion furnace 8, and the two ends of quartz ampoule should exceed the border 2～4cm of diffusion furnace, and exceeds part and fill up with insulation material; It is long that the two ends of quartz ampoule should not exceed the diffusion furnace border, otherwise can cause zinc-gallium steam in the two ends condensation;
The 4th step, open diffusion furnace, with the heating rate of 5～10 ℃/min, rise to 450～500 ℃, keep said temperature 2h; This diffusion process is opened the diffusion furnace top cover after finishing, and after the built-in fan of employing diffusion furnace is quickly cooled to room temperature, takes out the gallium antimonide wafer after spreading;
Fig. 2 has provided 10 ℃/min of heating rate, 500 ℃ of diffusion temperatures, the diffusion profile that diffusion adopts after 2h the sealed type diffusion method of zinc-gallium alloy to obtain and the diffusion profile comparison diagram of traditional zinc-antimony alloy as the open type zinc diffusion method acquisition of diffuse source.Now the zinc concentration curve in the gallium antimonide wafer should be in Fig. 2 shown in curve 12, can find, adopts the resulting zinc curve of sealed type diffusion method of the present invention only to have single diffusion front; If adopt the open type diffusion method that diffuse source is zinc-antimony alloy, the double diffusion forward position diffusion profile 11 that after diffusion, generation is had to flex point 10 when the diffusion operating mode is identical.
The 5th step, employing spin coating technique protect the N-type gallium antimonide front wafer surface that only has single diffusion front zinc curve obtained in the 4th step with photoresist, immersing proportioning is tartaric acid 3.5g: hydrogen peroxide 4mL: hydrofluoric acid 1mL: the use of deionized water 400mL removes 1～3min in the corrosive liquid of P type layer at wafer perimeter and the back side, then with acetone soln, soaks the removal photoresist; Then as substrate, adopt the method for magnetron sputtering to be prepared into the electrode of battery: at first successively at the backside deposition Ti50nm/Pt50nm/Ag250nm of this substrate as backplate, and 1～10 * 10
-4be heated to 280 ℃ under the vacuum degree condition of Pa, keep 10min; Then define in the front of this substrate the zone that needs depositing electrode by photoetching process, expose the zone that need to prepare electrode and will produce photoelectric zone and cover with photoresist, then deposit successively Pt50nm/Ag250nm as front electrode in the front of this substrate, the thin layer that finally adopts peel off-lift-off technology that battery front side is produced to the photoelectric effect zone is removed; Prepared the upper/lower electrode of battery by said method;
The 6th step, will prepare gallium antimonide battery after electrode and put into ammonium sulfide solution and carry out passivation 5～10min, to reduce the dangling bonds of wafer surface;
The 7th step, employing quantum efficiency tester are measured, and can obtain the quantum efficiency of battery.Fig. 5 is the internal quantum efficiency figure of the present invention's gallium antimonide infrared cell of adopting the sealed type diffusion method of zinc-gallium alloy to prepare.As shown in Figure 5, can find, battery prepared by the present invention all has good spectral responsivity at the wave band of 300～1700nm, and near infrared band, its quantum efficiency reaches 70～85%.
Adopted the concentration profile of secondary ion mass spectrometry test zinc in the gallium antimonide wafer in embodiments of the invention, measured zinc concentration is single diffusion front, and the inner 95% above concentration in zone of curve is lower than 10
20cm
-3atoms/cm
-3, such doping content magnitude can not cause the compound in a large number of the few son of photoproduction, is conducive to prepare the gallium antimonide infrared cell.
The preparation method of zinc described in the present invention-gallium alloy diffuse source is that the zinc that 3% purity is 99.9999% is that the gallium that 97% purity is 99.9999% is inserted in quartz ampoule simultaneously with containing weight ratio for adopting containing weight ratio, vacuumize and seal, put into heating furnace and be heated to 600 ℃ and keep 24h, so that two kinds of elements fully mix, obtain zinc required for the present invention-gallium diffuse source after cooling.
The selective emitter gallium antimonide infrared cell of the present invention that adopts said method to prepare, comprise: the gallium antimonide wafer that forms PN junction with surperficial zinc diffusion layer, the below of this wafer adopts Ti/Pt/Ag as backplate, the wafer top adopts Pt/Ag as positive electrode, deposits the silicon dioxide antireflection layer above this positive electrode; The inner 95% above concentration in zone of the zinc diffusion layer of this battery is lower than 10
20cm
-3atoms/cm
-3single diffusion front zinc concentration curve, and above-mentioned pattern curve is directly to form after zinc diffusion.
Comparative Examples 1:
If adopt the open type diffusion method that diffuse source is zinc-antimony alloy, diffusion temperature is still 500 ℃, diffusion 2h, and the double diffusion forward position diffusion profile 11 that after diffusion, generation is there is to flex point 10, the battery structure of preparing is as shown in Figure 3.Wherein to divide 14 top layer zinc diffusion zone 17 be all to have dual diffusion front 18 for the electrode 13 of N-type wafer 19 upper surfaces and light accepting part, zone 16 before the point of interface of two diffusion fronts 15 accurately need to be corroded to improve quantum efficiency, if do not corroded, the internal quantum efficiency of battery is only 15～25%, yet this corrosion process is very difficult to control, because the top layer area with high mercury is very dark, etching time is long, the concentration of corrosive liquid reduces along with the prolongation of etching time, corrosion rate also changes thereupon, the point of interface that will accurately erode to two diffusion fronts is difficult to.20 bottom electrodes that are battery in Fig. 3.
Fig. 3 is that employing tradition is as a comparison opened gallium antimonide battery structure schematic diagram prepared by method of diffusion; Fig. 4 is the gallium antimonide battery structure schematic diagram that the present invention adopts the sealed type method of diffusion to prepare.As can see from Figure 4, it is all the zinc concentration curve 23 that only has single diffusion front that top electrode 21 and the light accepting part of the N-type wafer 25 that employing sealed type diffusion method in the present invention obtains divide 22 following table layer regions 24, only needs to adopt ammonium sulfide to carry out simple surface passivation and can prepare the near infrared band internal quantum efficiency at 70～85% gallium antimonide battery; The bottom electrode of battery is shown in 26; And the electrode 13 of N-type wafer 19 upper surfaces that the open type diffusion method of the tradition of the employing in Comparative Examples 1 zinc-antimony alloy obtains as can see from Figure 3 and light accepting part to divide 14 top layer zinc diffusion zone 17 be all to have dual diffusion front 18, need to carry out accurate corrosion process etches away the surperficial high concentration layer of light area 14 until it has the pattern identical with curve 23, because corrosion rate and temperature, corrosive liquid concentration are relevant, in corrosion process, corrosive liquid concentration can reduce again gradually, therefore is difficult to realize accurate etching.The curve pattern difference that the inside battery of the different batches that adopts above-mentioned existing conventional method to prepare has is larger, can cause the power output difference of different batches battery larger.And in the gallium antimonide battery product of the present invention that adopts sealed type scattering preparation of the present invention to obtain, single diffusion front zinc concentration curve negotiating diffusion process directly forms, without adopting accurately corrosion, the stability of battery performance output and the controllability of preparation process have been improved.
Claims (3)
1. the preparation method of a selective emitter gallium antimonide infrared cell, comprise that gallium antimonide wafer cleaning, front wafer surface periphery prepare silicon dioxide diffusing protection layer, adopt the zinc diffusion method to prepare PN junction, remove the back side and periphery P type layer, prepare electrode, surface passivation, prepare antireflection layer; It is characterized in that: adopt zinc-gallium alloy to carry out sealed type zinc as diffuse source and be diffused in N-type gallium antimonide wafer and form the zinc concentration curve that only there is single diffusion front, specifically comprise the steps:
The first step, will be 2～7 * 10 containing tellurium Te concentration
17cm
-3,<100>crystal orientation N-type gallium antimonide wafer is successively inserted successively in dimethylbenzene, acetone and ethanol and is cleaned, and the watery hydrochloric acid that is then 5～20% by quality than concentration is removed the oxide of wafer surface, after finally cleaning in deionized water, with nitrogen, dries up;
Second step, on wafer the thick silicon dioxide layer of using plasma chemical vapour deposition technique deposition one deck 0.11 μ m, then adopt photoetching process to define the diffusion zone of center wafer, and the silicon dioxide layer of this central area is soaked and removes with corrosive liquid, obtain can be used to carry out the gallium antimonide wafer of zinc diffusion, i.e. diffusion preparation gallium antimonide wafer; This is used for soaking the corrosive liquid of removing silicon dioxide is conventional formulation, and by hydrofluoric acid 3ml: ammonium fluoride 6g: deionized water 10ml carries out proportioning;
The 3rd step, the diffusion for preparing in second step preparation gallium antimonide wafer and diffuse source zinc-gallium alloy are put into to the quartz ampoule of diffusion furnace; be evacuated to 5～10Pa, argon gas to the quartz ampoule internal pressure that to pass into flow be 1～3L/min returns to an atmospheric pressure; Then close the argon gas valve and continue to be evacuated to 5～10Pa; close the valve that connects vacuum pump and keep the vacuum state in quartz ampoule; heating rate with 5～10 ℃/min rises to 450～500 ℃, keeps said temperature 1～3h, makes zinc fume diffuse into wafer inside; Maintain the process end of constant high temperature in diffusion furnace after, open the diffusion furnace top cover, adopt built-in fan in diffusion furnace to be quickly cooled to room temperature to finish diffusion process, take out afterwards the gallium antimonide wafer after spreading, be the inner N-type gallium antimonide wafer that only there is single diffusion front zinc curve;
The 4th step, employing spin coating technique protect the N-type gallium antimonide front wafer surface that only has single diffusion front zinc curve obtained in the 3rd step with photoresist, immersing proportioning is tartaric acid 3.5g: hydrogen peroxide 4mL: hydrofluoric acid 1mL: the use of deionized water 400mL removes 1～3min in the corrosive liquid of P type layer at wafer perimeter and the back side, then with acetone soln, soaks the removal photoresist; Then as substrate, adopt the method for magnetron sputtering to be prepared into the electrode of battery: at first successively at the backside deposition Ti50nm/Pt50nm/Ag250nm of this substrate as backplate, and 1～10 * 10
-4be heated to 280 ℃ under the vacuum degree condition of Pa, keep 10min; Then define in the front of this substrate the zone that needs depositing electrode by photoetching process, expose the zone that need to prepare electrode and will produce photoelectric zone and cover with photoresist, then deposit successively Pt50nm/Ag250nm as front electrode in the front of this substrate, the thin layer that finally adopts peel off-lift-off technology that battery front side is produced to the photoelectric effect zone is removed, and prepares the upper/lower electrode of battery;
The 5th step, will prepare gallium antimonide battery after upper/lower electrode and put into ammonium sulfide solution and soak 5～10min, carry out surface passivation;
The silicon nitride layer that the 6th step, using plasma chemical vapour deposition technique deposit one deck 0.15 μ m at battery front side, as antireflective coating, obtains selective emitter gallium antimonide infrared cell.
2. the preparation method of selective emitter gallium antimonide infrared cell as claimed in claim 1, the preparation method who is characterised in that described zinc-gallium alloy diffuse source is: will be the 3% purity zinc that is 99.9999% containing weight ratio inserts in quartz ampoule with the gallium that containing weight ratio is 97%, purity is 99.9999% simultaneously, after being evacuated to 5～10Pa sealing, put into heating furnace and be heated to 600 ℃ and keep 24h, so that two kinds of elements fully mix, be required zinc-gallium diffuse source after cooling.
3. a selective emitter gallium antimonide infrared cell that adopts the described method of claim 1 to prepare, comprise: the gallium antimonide wafer that forms PN junction with surperficial zinc diffusion layer, the below of this wafer adopts Ti/Pt/Ag as backplate, the top of wafer adopts Pt/Ag as positive electrode, and deposits the silicon dioxide antireflection layer above this positive electrode; It is characterized in that: inner 95% zone of the zinc diffusion layer of this battery is above is that concentration is lower than 10
20cm
-3atoms/cm
-3single diffusion front zinc concentration curve, and above-mentioned pattern curve is directly to form after zinc diffusion.
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Cited By (3)
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|---|---|---|---|---|
| CN105070655A (en) * | 2015-07-15 | 2015-11-18 | 中国电子科技集团公司第四十六研究所 | Method for passivating gallium antimonide wafer |
| RU2575972C1 (en) * | 2014-11-18 | 2016-02-27 | Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук | METHOD FOR PRODUCTION OF GaSb-BASED PHOTOCONVERTER |
| CN108717953A (en) * | 2018-05-25 | 2018-10-30 | 河海大学 | A kind of preparation method of P type substrate gallium antimonide thermophotovoltaic |
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| US6005259A (en) * | 1997-09-23 | 1999-12-21 | National Science Council | InAs/GaSb superlattice structure infrared detector fabricated by organometallic vapor phase epitaxy |
| CN101562210A (en) * | 2008-04-16 | 2009-10-21 | 中国科学院半导体研究所 | GaAs-based InAs/GaSb superlattice infrared photodetector and manufacturing method thereof |
| CN101702414A (en) * | 2009-11-05 | 2010-05-05 | 云南师范大学 | Manufacturing method of semiconductor solar cell |
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| US5536948A (en) * | 1994-08-23 | 1996-07-16 | Grumman Aerospace Corporation | Infrared detector element substrate with superlattice layers |
| US6005259A (en) * | 1997-09-23 | 1999-12-21 | National Science Council | InAs/GaSb superlattice structure infrared detector fabricated by organometallic vapor phase epitaxy |
| CN101562210A (en) * | 2008-04-16 | 2009-10-21 | 中国科学院半导体研究所 | GaAs-based InAs/GaSb superlattice infrared photodetector and manufacturing method thereof |
| CN101702414A (en) * | 2009-11-05 | 2010-05-05 | 云南师范大学 | Manufacturing method of semiconductor solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| RU2575972C1 (en) * | 2014-11-18 | 2016-02-27 | Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук | METHOD FOR PRODUCTION OF GaSb-BASED PHOTOCONVERTER |
| CN105070655A (en) * | 2015-07-15 | 2015-11-18 | 中国电子科技集团公司第四十六研究所 | Method for passivating gallium antimonide wafer |
| CN108717953A (en) * | 2018-05-25 | 2018-10-30 | 河海大学 | A kind of preparation method of P type substrate gallium antimonide thermophotovoltaic |
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