CN106299027A - A kind of preparation method of N-type monocrystalline double-side cell - Google Patents
A kind of preparation method of N-type monocrystalline double-side cell Download PDFInfo
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- CN106299027A CN106299027A CN201610759745.5A CN201610759745A CN106299027A CN 106299027 A CN106299027 A CN 106299027A CN 201610759745 A CN201610759745 A CN 201610759745A CN 106299027 A CN106299027 A CN 106299027A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 90
- 239000010703 silicon Substances 0.000 claims abstract description 90
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 89
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 42
- 238000009792 diffusion process Methods 0.000 claims abstract description 27
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 22
- 235000008216 herbs Nutrition 0.000 claims abstract description 13
- 210000002268 wool Anatomy 0.000 claims abstract description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000000889 atomisation Methods 0.000 claims abstract description 10
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 9
- 239000007788 liquid Substances 0.000 claims abstract description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 8
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 8
- 230000007797 corrosion Effects 0.000 claims abstract description 6
- 238000005260 corrosion Methods 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 5
- 238000001020 plasma etching Methods 0.000 claims abstract description 5
- 238000007650 screen-printing Methods 0.000 claims abstract description 5
- 238000001039 wet etching Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 11
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 8
- 229910017604 nitric acid Inorganic materials 0.000 claims description 8
- 230000003667 anti-reflective effect Effects 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 230000009466 transformation Effects 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000628997 Flos Species 0.000 description 1
- 206010061245 Internal injury Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses the preparation method of the N-type monocrystalline double-side cell that a kind of rate in blocks is high and photoelectric transformation efficiency is good, B diffusion is carried out after comprising the steps: front side of silicon wafer making herbs into wool, front making herbs into wool is particularly as follows: first form pyramid structure with laser at front side of silicon wafer, after nitrogen cleaning is clean, heating silicon chip to 70 ° ~ 80 °, utilize ultrasonic atomization to deposit NaOH droplet at front side of silicon wafer, after corrosion in 2 ~ 4 minutes, form pyramid suede structure；Carry out wet etching, remove silicon chip back side, the self-diffusion layer of edge formation, then deposit SiNXMask；After silicon chip back side is carried out P diffusion, the self-diffusion layer at plasma etching edge, and be carried out with corrosive liquid, remove surface SiNXMask layer and phosphorosilicate glass layer；ALD mode is utilized to form front side of silicon wafer Al2O3Passivating film, and deposit SiN at front side of silicon waferXProtecting film, silicon chip back side deposit SiNXAntireflective film；Form electrode at silk screen printing to be sintered.
Description
Technical field
The present invention relates to photovoltaic apparatus and manufacture field, especially relate to the preparation method of a kind of N-type monocrystalline double-side cell.
Background technology
In current photovoltaic market, conventional is p-type polycrystalline cell piece, and the conversion of the photovoltaic of this p-type polycrystalline cell piece
Efficiency is the highest.Along with the progress of technology, the production cost of N-type silicon chip is also further reducing, additionally, due to monocrystal material
Efficiency higher than polycrystalline material, therefore N-type battery slice have also been obtained increasing utilization, and, a kind of N of the prior art
The method of the Double side diffusion of type monocrystalline double-side cell, first boron diffusion after front side of silicon wafer making herbs into wool, then go out nitridation by CVD deposition
Silicon and silicon oxide are as mask, as effective barrier layer to front when the back side carries out phosphorus diffusion, the therefore two-sided electricity of N-type monocrystalline
Arise at the historic moment in pond.
And scientific research in the recent period finds, cover with aluminum oxide film, to play passivation silicon chip surface, it is possible to increase the sound of long wave
Should, thus it is obviously improved the conversion efficiency of photoelectricity, therefore this technology has obtained the extensive concern of industry.
On the other hand, pyramidion is set before front side of silicon wafer making herbs into wool to form pyramid suede structure, it is possible to effectively will
Reflectance reduction, to 5%, improves the optoelectronic transformation efficiency of 0.3 ~ 0.7%, it is possible to significantly improve the performance of battery.But existing technology is
Scribing pyramidion at front side of silicon wafer machinery, the silicon chip after scribing puts into making herbs into wool in corrosive solution, owing to shape scribed by machinery
The internal injury become is under the erosion of corrosive solution uncontrollability, and the fragment rate easily causing silicon chip improves, it would be highly desirable to improve.
Summary of the invention
It is double that the technical problem to be solved is to provide the N-type monocrystalline that a kind of rate in blocks is high and photoelectric transformation efficiency is good
The preparation method of face battery.
The present invention solves the technical scheme that above-mentioned technical problem used: the preparation side of a kind of N-type monocrystalline double-side cell
Method, specifically includes following steps:
S1, in front side of silicon wafer making herbs into wool, then carries out B diffusion；
S2 carries out wet etching, removes silicon chip back side, the self-diffusion layer of edge formation；
Then S3 uses PEVCD equipment at B diffusion layer SiN deposited aboveXMask；
S4 carries out P diffusion to silicon chip back side；
The self-diffusion layer of S5 plasma etching silicon chip edge, is then carried out silicon chip with corrosive liquid, removes silicon chip surface
SiNXMask layer and phosphorosilicate glass layer；
S6 utilizes ALD mode to form front side of silicon wafer Al2O3Passivating film, then deposits SiN at front side of silicon waferXProtecting film, silicon chip carry on the back
Face deposition SiNXAntireflective film；
S7 carries out silk screen printing formation electrode respectively at the front and back of silicon chip, then sinters；
Wherein, in front side of silicon wafer making herbs into wool described in step S1 method particularly includes: first form pyramid knot with laser at front side of silicon wafer
Structure, and clean by nitrogen cleaning, then heating silicon chip to 70 ° ~ 80 °, utilize ultrasonic atomization technique to deposit one at front side of silicon wafer
Layer NaOH droplet uniform, discontinuous, forms pyramid suede structure at silicon chip front surface after corrosion in 2 ~ 4 minutes.
As preferably, the mass percent concentration of the NaOH solution before the atomization of NaOH droplet is 10% ~ 20%.
As preferably, front surface A l that step S4 is formed2O3The thickness of passivating film is 6 ~ 10nm, front side of silicon wafer SiNXAntireflective film
Thickness be 45 ~ 60nm, silicon chip back side SiNXThe thickness of antireflective film is 55 ~ 75nm.
As preferably, described corrosive liquid is the mixed liquor of nitric acid and Fluohydric acid., and nitric acid with the mass concentration ratio of Fluohydric acid. is
6:1。
Compared with prior art, it is an advantage of the current invention that first to use laser technology to scribe pyramid knot at front side of silicon wafer
Structure, then passes through ultrasonic atomization technique and deposits NaOH droplet corrosion of silicon front surface at front side of silicon wafer, form pyramid floss
Face structure, will not damage the overall structure of silicon chip, and rate in blocks is high and effectively reduces reflectance；Then ALD side is being utilized
Formula forms front side of silicon wafer Al2O3Passivating film, and deposit SiNXProtecting film so that photoelectric transformation efficiency is higher, average light optoelectronic conversion ratio
It is 20.1%.
Detailed description of the invention
Below in conjunction with embodiment, the present invention is described in further detail.
Embodiment 1:
The preparation method of a kind of N-type monocrystalline double-side cell, specifically includes following steps:
S1, in front side of silicon wafer making herbs into wool, then carries out B diffusion；Wherein, front side of silicon wafer making herbs into wool method particularly includes: first with laser at silicon
Sheet front forms pyramid structure, and clean by nitrogen cleaning, and then heating silicon chip to 80 °, utilizes ultrasonic atomization technique to exist
Front side of silicon wafer one layer of NaOH droplet uniform, discontinuous of deposition, forms pyramid at silicon chip front surface after corrosion in 2 minutes
Suede structure；The mass percent concentration of the NaOH solution before the atomization of NaOH droplet is 20%；
S2 carries out wet etching, removes silicon chip back side, the self-diffusion layer of edge formation；
Then S3 uses PEVCD equipment at B diffusion layer SiN deposited aboveXMask；
S4 carries out P diffusion to silicon chip back side；
The self-diffusion layer of S5 plasma etching silicon chip edge, is then carried out silicon chip with corrosive liquid, removes silicon chip surface
SiNXMask layer and phosphorosilicate glass layer；Corrosive liquid is the mixed liquor of nitric acid and Fluohydric acid., nitric acid and the mass concentration ratio of Fluohydric acid.
For 6:1, reaction temperature is 7.8 DEG C, response time 90s；
S6 utilizes ALD mode to form front side of silicon wafer Al2O3Passivating film, Al2O3The thickness of passivating film is 10nm, then at silicon chip just
Face deposition SiNXProtecting film, silicon chip back side deposit SiNXAntireflective film；Wherein, front side of silicon wafer SiNXThe thickness of antireflective film is 60nm,
Silicon chip back side SiNXThe thickness of antireflective film is 75nm；
S7 carries out silk screen printing formation electrode respectively at the front and back of silicon chip, then sinters, prepares photoelectric conversion rate 20.3%
N-type monocrystalline double-side cell.
Embodiment 2:
The preparation method of a kind of N-type monocrystalline double-side cell, specifically includes following steps:
S1, in front side of silicon wafer making herbs into wool, then carries out B diffusion；Wherein, front side of silicon wafer making herbs into wool method particularly includes: first with laser at silicon
Sheet front forms pyramid structure, and clean by nitrogen cleaning, and then heating silicon chip to 70 °, utilizes ultrasonic atomization technique to exist
Front side of silicon wafer one layer of NaOH droplet uniform, discontinuous of deposition, forms pyramid at silicon chip front surface after corrosion in 4 minutes
Suede structure；The mass percent concentration of the NaOH solution before the atomization of NaOH droplet is 10%；
S2 carries out wet etching, removes silicon chip back side, the self-diffusion layer of edge formation；
Then S3 uses PEVCD equipment at B diffusion layer SiN deposited aboveXMask；
S4 carries out P diffusion to silicon chip back side；
The self-diffusion layer of S5 plasma etching silicon chip edge, is then carried out silicon chip with corrosive liquid, removes silicon chip surface
SiNXMask layer and phosphorosilicate glass layer；Corrosive liquid is the mixed liquor of nitric acid and Fluohydric acid., nitric acid and the mass concentration ratio of Fluohydric acid.
For 6:1, reaction temperature is 7.8 DEG C, response time 90s；
S6 utilizes ALD mode to form front side of silicon wafer Al2O3Passivating film, Al2O3The thickness of passivating film is 6nm, then at front side of silicon wafer
Deposition SiNXProtecting film, silicon chip back side deposit SiNXAntireflective film；Wherein, front side of silicon wafer SiNXThe thickness of antireflective film is 45nm, silicon
Sheet back side SiNXThe thickness of antireflective film is 55nm；
S7 carries out silk screen printing formation electrode respectively at the front and back of silicon chip, then sinters, prepares photoelectric conversion rate 19.9%
N-type monocrystalline double-side cell..
Claims (4)
1. a preparation method for N-type monocrystalline double-side cell, specifically includes following steps:
S1, in front side of silicon wafer making herbs into wool, then carries out B diffusion；
S2 carries out wet etching, removes silicon chip back side, the self-diffusion layer of edge formation；
Then S3 uses PEVCD equipment at B diffusion layer SiN deposited aboveXMask；
S4 carries out P diffusion to silicon chip back side；
The self-diffusion layer of S5 plasma etching silicon chip edge, is then carried out silicon chip with corrosive liquid, removes silicon chip surface SiNX
Mask layer and phosphorosilicate glass layer；
S6 utilizes ALD mode to form front side of silicon wafer Al2O3Passivating film, then deposits SiN at front side of silicon waferXProtecting film, silicon chip carry on the back
Face deposition SiNXAntireflective film；
S7 carries out silk screen printing formation electrode respectively at the front and back of silicon chip, then sinters；
It is characterized in that, in front side of silicon wafer making herbs into wool described in step S1 method particularly includes: first form gold with laser at front side of silicon wafer
Word tower structure, and clean by nitrogen cleaning, then heating silicon chip to 70 ° ~ 80 °, utilize ultrasonic atomization technique at front side of silicon wafer
Deposit one layer of NaOH droplet uniform, discontinuous, after corrosion in 2 ~ 4 minutes, form pyramid matte knot at silicon chip front surface
Structure.
The preparation method of a kind of N-type monocrystalline double-side cell the most according to claim 1, it is characterised in that: NaOH droplet
The mass percent concentration of the NaOH solution before atomization is 10% ~ 20%.
The preparation method of a kind of N-type monocrystalline double-side cell the most according to claim 2, it is characterised in that: step S4 is formed
Front surface A l2O3The thickness of passivating film is 6 ~ 10nm, front side of silicon wafer SiNXThe thickness of antireflective film is 45 ~ 60nm, silicon chip back side SiNX
The thickness of antireflective film is 55 ~ 75nm.
The preparation method of a kind of N-type monocrystalline double-side cell the most according to claim 3, it is characterised in that: described corrosive liquid
For the mixed liquor of nitric acid Yu Fluohydric acid., nitric acid is 6:1 with the mass concentration ratio of Fluohydric acid..
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111312860A (en) * | 2020-03-16 | 2020-06-19 | 江苏日托光伏科技股份有限公司 | Method for reducing edge recombination of N-Topcon crystalline silicon solar cell |
| CN114566556A (en) * | 2022-02-28 | 2022-05-31 | 安徽华晟新能源科技有限公司 | Processing method of semiconductor substrate layer, solar cell and preparation method of solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111312860A (en) * | 2020-03-16 | 2020-06-19 | 江苏日托光伏科技股份有限公司 | Method for reducing edge recombination of N-Topcon crystalline silicon solar cell |
| CN114566556A (en) * | 2022-02-28 | 2022-05-31 | 安徽华晟新能源科技有限公司 | Processing method of semiconductor substrate layer, solar cell and preparation method of solar cell |
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Effective date of registration: 20211014 Address after: 315700 Industrial Park, sizhoutou Town, Xiangshan County, Ningbo City, Zhejiang Province Patentee after: Ningbo Lefeng new energy Co.,Ltd. Address before: 315700 No. 37, Jingang Road, Binhai Industrial Park, Xiangshan County Economic Development Zone, Ningbo City, Zhejiang Province Patentee before: ZHEJIANG QIXIN NEW ENERGY TECHNOLOGY Co.,Ltd. |