CN101404307A - Production method for polycrystalline silicon solar cell texture surface - Google Patents
Production method for polycrystalline silicon solar cell texture surface Download PDFInfo
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- CN101404307A CN101404307A CNA2008102187341A CN200810218734A CN101404307A CN 101404307 A CN101404307 A CN 101404307A CN A2008102187341 A CNA2008102187341 A CN A2008102187341A CN 200810218734 A CN200810218734 A CN 200810218734A CN 101404307 A CN101404307 A CN 101404307A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for manufacturing a matte surface of a polysilicon solar cell. A laser beam is adopted to intensively scan the surface of a polysilicon wafer, thus causing silicon materials in the scanned region to generate fusion, gasification and spill reaction to form a micro-sized concave-convex structure on the surface of the polysilicon wafer, and the surface is etched and then is subject to surface cleaning by a chemical method to remove the damaged layer. The polysilicon wafer structure produced by the method can lead incident light to produce multiple reflection therein, increase the absorption of the incident light, achieve good surface anti-reflection effect and can cause little damage to the polysilicon wafer. The method solves the problem of manufacturing the matte surface of the polysilicon cell and can obtain the polysilicon wafer with surface reflectivity far less than the surface reflectivity of the silicon wafer manufactured by a pure chemical method. The method plays an important role of improving the light absorption and photoelectric conversion efficiency of the polysilicon solar cell.
Description
Technical field
The present invention relates to a kind of method of polycrystalline silicon surface wool manufacturing, specifically a kind of method at the polycrystalline silicon solar cell surface wool manufacturing.
Technical background
Silicon solar cell utilizes the photovoltaic effect of p-n junction to realize opto-electronic conversion, has become one of new forms of energy development main flow.Polycrystalline silicon solar cell accounted for 45.2% of world's solar cell total output in 2007, was in the stage that grows steadily, and the technical reason of puzzlement polycrystal silicon cell mainly is the existence of crystal boundary and lacks suitable surface wool manufacturing method.The surface antireflective has determined solar cell to absorb the ratio of incident light, be related to the final photoelectric conversion efficiency of battery, for the crystal-silicon solar cell that accounts for main flow at present, not surface treated reflectivity generally surpasses 30%, through alkali lye anisotropy chemistry corrosion formation surface micrometre-grade at random behind the pyramid structure matte monocrystalline silicon battery surface reflectivity can drop to 10%, polycrystal silicon cell is owing to the crystal orientation difference of surface microstructure, and the isotropism chemistry corrosion of generally adopting at present can only be reduced to reflectivity about 20%.
Because matte has directly, significantly acts on battery efficiency, it is significant to develop new polycrystalline silicon surface wool manufacturing technology.These technology at first require the concaveconvex structure that can form micron order and have suitable depth-width ratio at polysilicon surface, require the electric property not significantly infringement of processing procedure to silicon chip simultaneously.Tackle production requirement at last, the making herbs into wool technology will accomplish that also better control is arranged on time and cost, is fit to industrialization.
Summary of the invention
The purpose of this invention is to provide a kind of production method for polycrystalline silicon solar cell texture surface, adopt this method can make high-performance polycrystal silicon solar cell matte, and have industrialization prospect, make polycrystal silicon cell reach even be lower than the level of monocrystalline silicon at the reflectivity of matte.
Purpose of the present invention is achieved by taking following technical scheme:
A kind of production method for polycrystalline silicon solar cell texture surface, it is characterized in that, utilize laser beam in the polysilicon chip intensive scanning in surface, make the interior silicon materials generation fusion of scanning area, gasify and spill reaction, form micron-sized concaveconvex structure on the polysilicon chip surface, adopt chemical method to do surface clean and removal affected layer after the etching.
As of the present invention further perfect, adopt pulse or the continuous laser beam of power 1～1000W, wavelength 1100～200nm, the hot spot that reaches the micron dimension diameter after process focuses on shines silicon chip surface and scans.
As of the present invention further perfect, according to the performance of polysilicon chip and laser beam, select suitable scanning etching pattern, in the intensive etching of silicon chip surface, form even matte.
As one embodiment of the present invention, reach 0.1～2 in the depth-width ratio value of the formed micron-sized concaveconvex structure in polysilicon chip surface.
As one embodiment of the present invention, adopt alkali lye, acid solution or both cooperations after the etching, the residue on cleaning silicon chip surface, and the affected layer on corrosion etch areas surface are to recover normal electric property.
The main means that the present invention makes matte are to adopt laser beam etching silicon chip surface, adopt more powerful pulse or continuous laser beam, the hot spot that reaches the micron dimension diameter after process focusing (enough detailed rules and regulations need not focus on as laser beam itself) shines silicon chip surface and scans, make the surfacing fusion of irradiation area, sputter even gasification, thereby form intensive concaveconvex structures such as hole, groove hole, i.e. matte.Remove impurity layer (oxide, nitride etc.) and the affected layer that the laser ablation region surface forms with chemical method at last.Incident illumination is mapped to solar battery surface and can reflects, and has only a certain proportion of luminous energy to enter inside battery and is absorbed and is converted into electric energy, does not have a suede structure if battery surface is smooth, and only there is primary event in incident light, as shown in Figure 1.And can having depth-width ratio, the solar battery surface that the inventive method is made reaches 1 even higher relief structured surface, light incides such structure, can repeatedly reflect at body structure surface, as shown in Figure 2, having a certain proportion of light to enter into inside battery each time is absorbed, thereby the light that has improved the solar cell absorption accounts for the ratio of incident light, has reduced the battery surface light reflectivity, has improved the photoelectric conversion efficiency of solar cell.
The concrete treatment step of the inventive method is:
(1) cleaning silicon chip surface impurity avoids impurity to spread in the laser ablation process;
(2) select suitable laser ablation pattern, the pattern of laser ablation is the simplest to be parallel lines or cross spider array, also can design dot matrix, or other patterns, and the size of pattern will cooperate the etching width and the degree of depth of laser beam, and the array cycle arrives the hundreds of micron tens;
(3) select suitable laser parameter schemes such as optical maser wavelength, beam mode, spot size, light beam power, pulse frequency and sweep speed, carry out setting;
(4) silicon chip is fixed on the workbench, utilizes laser beam flying to do etching by predetermined parameters and pattern;
(5) adopt alkali lye, acid solution or both cooperations after the etching, the residue on cleaning silicon chip surface, and the affected layer on corrosion etch areas surface just can carry out other operations that solar cell is made afterwards.
Compared with prior art, the beneficial effect that has of the present invention is:
The present invention utilizes laser ablation, can form depth-width ratio greater than 1 micrometer structure at polysilicon surface, the surface reflectivity in laser ablation zone can be reduced to 6%, can reach 10% through the surface reflectivity after the chemical treatment, has reached the level of monocrystalline silicon on anti-reflective effect.By the detection to the sample minority carrier life time, the decay of minority carrier life time can control to 30% simultaneously, meets the requirement that battery is made.Compare with anisotropy chemistry caustic solution, the inventive method is equally applicable to monocrystalline silicon battery to the crystal orientation no requirement (NR).
Description of drawings
The schematic diagram of reflection takes place in Fig. 1 at the battery surface that does not have suede structure for light;
The schematic diagram of reflection takes place in Fig. 2 at the battery surface that is shaped on suede structure for light;
Fig. 2 makes the shape appearance figure (ESEM is taken figure) of sample for the embodiment of the invention 1;
Fig. 3 makes the shape appearance figure (ESEM is taken figure) of sample for the embodiment of the invention 2.
Embodiment
The present invention will be described below to enumerate specific embodiment.It is pointed out that embodiment only is used for that the invention will be further described, do not represent protection scope of the present invention, nonessential modification and adjustment that other people prompting according to the present invention is made still belong to protection scope of the present invention.
Embodiment 1
Adopt the Nd:YAG laser of a wavelength 1064nm: laser pulse frequency 1K～30KHz, vibration mirror scanning, light velocity transverse mode are low step mode.It is 1～7KHz that laser pulse frequency is set, and sweep speed is 20～100mm/s, and exciting current is 18～25A.The sample silicon chip is the polysilicon chip of 260 microns of thickness, earlier original silicon chip is done suitable chemical cleaning and removes surface attachment impurity.The etching pattern is selected array of parallel lines for use, line length 30mm, spacing 1.6mm, clean corrosion 15 minutes with 20%NaOH solution behind the laser ablation, washed with de-ionized water then, nitrogen oven dry, promptly finish the making herbs into wool process, the pattern that makes sample is the solid matter groove shape, as shown in Figure 3.
Embodiment 2
Adopt the Nd:YAG laser of a wavelength 1064nm: laser pulse frequency 1K～30KHz, vibration mirror scanning, light velocity transverse mode are low step mode.It is 7～15KHz that laser pulse frequency is set, and sweep speed is 20～100mm/s, and exciting current is 22～30A.The sample silicon chip is the polysilicon chip of 260 microns of thickness, earlier original silicon chip is done suitable chemical cleaning and removes surface attachment impurity.The etching pattern is selected array of parallel lines for use, line length 30mm, and spacing 0.1～0.2mm cleans corrosion 2～6 minutes with 20%NaOH solution behind the laser ablation, uses HF:HNO again
3Mixed solution corrosion 2～10 minutes, washed with de-ionized water then, the making herbs into wool process is promptly finished in the nitrogen oven dry, and the pattern that makes sample is a solid matter class pyramidal pits shape, and as shown in Figure 4, the best surface reflectivity can reach 10%.
Embodiment 3
Adopt the Nd:YAG laser of a wavelength 1064nm: laser pulse frequency 1K～30KHz, vibration mirror scanning, light velocity transverse mode are low step mode.It is 1～10KHz that laser pulse frequency is set, and sweep speed is 20～200mm/s, and exciting current is 18～25A.The sample silicon chip is the monocrystalline silicon piece of 330 microns of thickness, earlier original silicon chip is done suitable chemical cleaning and removes surface attachment impurity.The etching pattern is selected array of parallel lines for use, line length 30mm, and spacing 0.06～0.15mm cleaned 10～20 minutes with 20%NaOH solution behind the laser ablation, used HF:HNO again
3Mixed solution corrosion 2～10 minutes, washed with de-ionized water then, the making herbs into wool process is promptly finished in the nitrogen oven dry, and the pattern that makes sample is the solid matter groove shape.
Embodiment 4
Adopt the Nd:YAG laser of a wavelength 532nm: laser pulse frequency 1K～50KHz, vibration mirror scanning, light velocity transverse mode are low step mode.It is 1～10KHz that laser pulse frequency is set, and sweep speed is 20～200mm/s, and exciting current is 18～25A.The sample silicon chip is the polysilicon chip of 260 microns of thickness, earlier original silicon chip is done suitable chemical cleaning and removes surface attachment impurity.The etching pattern is selected the square crossing array of parallel lines for use, line length 30mm, and spacing 0.1～0.3mm cleaned 5～15 minutes with 20%NaOH solution behind the laser ablation, used HF:HNO again
3Mixed solution corrosion 2～15 minutes, washed with de-ionized water then, the making herbs into wool process is promptly finished in the nitrogen oven dry, and the pattern that makes sample is solid matter platform shape or pyramid-like shape for lugs.
Embodiment 5
Adopt the Nd:YAG laser of a wavelength 532nm: laser pulse frequency 1K～50KHz, vibration mirror scanning, light velocity transverse mode are low step mode.It is 1～5KHz that laser pulse frequency is set, and sweep speed is 100～600mm/s, and exciting current is 20～30A.The sample silicon chip is the polysilicon chip of 260 microns of thickness, earlier original silicon chip is done suitable chemical cleaning and removes surface attachment impurity.The etching pattern is selected array of parallel lines for use, line length 30mm, and spacing 0.05～0.3mm uses single high energy laser pulse to get ready, forms the point-like pit, uses HF:HNO behind the laser ablation
3Mixed solution corrosion 2～15 minutes, washed with de-ionized water then, the making herbs into wool process is promptly finished in the nitrogen oven dry, and the pattern that makes sample is the solid matter pit shape.
Claims (5)
1. production method for polycrystalline silicon solar cell texture surface, it is characterized in that, utilize laser beam in the polysilicon chip intensive scanning in surface, make the interior silicon materials generation fusion of scanning area, gasify and spill reaction, form micron-sized concaveconvex structure on the polysilicon chip surface, adopt chemical method to do surface clean and removal affected layer after the etching.
2. production method for polycrystalline silicon solar cell texture surface according to claim 1, it is characterized in that, adopt pulse or the continuous laser beam of power 1～1000W, wavelength 1100～200nm, the hot spot that reaches the micron dimension diameter after process focuses on shines silicon chip surface and scans.
3. production method for polycrystalline silicon solar cell texture surface according to claim 1 and 2 is characterized in that, according to the performance of polysilicon chip and laser beam, selects suitable scanning etching pattern, in the intensive etching of silicon chip surface, forms even matte.
4. production method for polycrystalline silicon solar cell texture surface according to claim 1 and 2 is characterized in that, reaches 0.1～2 in the depth-width ratio value of the formed micron-sized concaveconvex structure in polysilicon chip surface.
5. production method for polycrystalline silicon solar cell texture surface according to claim 1 and 2 is characterized in that, adopts alkali lye, acid solution or both cooperations after the etching, the residue on cleaning silicon chip surface, and the affected layer on corrosion etch areas surface.
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