CN106252464B - A kind of method for accelerating stable cadmium telluride diaphragm solar module peak power - Google Patents
A kind of method for accelerating stable cadmium telluride diaphragm solar module peak power Download PDFInfo
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- CN106252464B CN106252464B CN201610806986.0A CN201610806986A CN106252464B CN 106252464 B CN106252464 B CN 106252464B CN 201610806986 A CN201610806986 A CN 201610806986A CN 106252464 B CN106252464 B CN 106252464B
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- China
- Prior art keywords
- peak power
- deposited
- stable
- thin film
- cadmium telluride
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000010409 thin film Substances 0.000 claims abstract description 17
- 238000005286 illumination Methods 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 13
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims abstract description 11
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000012528 membrane Substances 0.000 claims abstract description 10
- 238000003475 lamination Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 229910052736 halogen Inorganic materials 0.000 claims description 8
- 150000002367 halogens Chemical class 0.000 claims description 8
- 229910052724 xenon Inorganic materials 0.000 claims description 8
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 4
- 241000208340 Araliaceae Species 0.000 claims description 2
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 claims description 2
- 235000003140 Panax quinquefolius Nutrition 0.000 claims description 2
- 235000008434 ginseng Nutrition 0.000 claims description 2
- 229910004613 CdTe Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of method for accelerating stable cadmium telluride diaphragm solar module peak power, including：（A）Substrate is provided；（B）Transparent conductive oxide film is deposited on the substrate；（C）Cadmium sulphide membrane is deposited in film surface；（D）Cadimium telluride thin film is deposited on the cadmium sulphide membrane；（E）Cadimium telluride thin film is surface-treated；（F）Buffer layer on Cadimium telluride thin film after treatment；（G）In buffer-layer surface deposited metal back electrode；（H）Lamination is packaged to the battery after deposited metal back electrode；（I）By the solar cell module of lamination under conditions of 80 ~ 300 DEG C additional certain electric current, 2 minutes duration 5 second；（J）The solar cell module for adding overcurrent is subjected to illumination until peak power reaches stable.The method of the present invention is on the basis of solar cell module impressed current, improves assembly temperature to shorten the stable processing time of peak power.
Description
Technical field
It is especially a kind of to accelerate stable cadmium telluride diaphragm solar mould the present invention relates to photovoltaic solar cell technical field
The method of group peak power.
Background technology
With the worsening shortages of the energy, development and utilization of the people to solar energy is paid attention to increasingly.In the market is bigger to area,
It is more efficient, and the demand of the lower novel solar battery of production cost increasingly increases.In photovoltaic cell field, cadmium telluride
（CdTe）Thin film solar cell because itself intrinsic material property and it development process, be easy to large area continuous production etc.
Advantage, receive significant attention.Cadmium telluride（CdTe）It is the material of typical polycrystalline structure, it has preferable 1.45-1.5eV's
Band gap, and be a kind of semi-conducting material of direct band gap, absorption coefficient is 5 × 105Cm-1, therefore only need several microns of thickness
Material can prepare efficient solar cell, be it is a kind of efficiently, stably, relative cost it is low thin film solar electricity
Pond.And cadmium telluride（CdTe）Film solar battery structure is simple, easily accomplishes scale production, be recent domestic too
One of focus of positive energy battery research, especially in field of thin film solar cells.
Cadmium telluride（CdTe）Thin-film solar cells is mainly by the cadmium sulfide of n-type（CdS）With p-type cadmium telluride（CdTe）Group
Into the method for depositing CdS, CdTe at present mainly has electrochemical deposition method, radio frequency sputtering method, vacuum vapor deposition method, spray pyrolysis
Method, close spaced sublimation method, gas phase transport sedimentation etc..Wherein, the cadmium telluride diaphragm solar electricity that prepared by gas phase transport sedimentation
The advantages that pond film quality is good, sedimentation rate is high, crystallite dimension is big, utilization rate of raw materials is high, it is easy to realize industrialization production.
Cadmium telluride diaphragm solar battery is after several minutes of During Illuminations to a few hours, it may appear that its peak power
（Pmax）The phenomenon to tend towards stability, and stable definition is：After irradiation after a while, compare measured by before and after light exposure
Peak power, wherein higher value is maximum Pmp, and wherein smaller value is minimum Pmp, (maximum Pmp-minimum Pmp)/
(maximum Pmp+minimum Pmp)<The peak power is defined as when 1% to be stable, the change of peak power is likely to be increase
Or reduce.Under the irradiation of etalon optical power, the efficiency of module is measured, until peak power reaches stable.
Solar modules can produce photoelectric current under light illumination, and photoelectric current is formed by the carrier of movement, and carrier is flowing
During through absorbed layer, part can be filled up and confine defect, and stable module is electrical, means main at present are that increase is additional
Electric current, the most short day time needed for stable peak power can be shortened, the wherein size of impressed current is that solar modules are short
0.5-2 times of road electric current, duration are 2-30 minutes, and this time is for industrialization, and the time is still slightly long how
Further shorten the most short day time needed for stable cadmium telluride solar modules peak power, be those skilled in the art urgently
The technical problem of solution.
The content of the invention
In order to solve the above technical problems, it is an object of the present invention to provide one kind to accelerate stable cadmium telluride diaphragm solar module most
Powerful method.
The technical solution adopted by the present invention is：
A kind of method for accelerating stable cadmium telluride diaphragm solar module peak power, comprises the following steps：（A）Base is provided
Plate；（B）Deposition is used as the transparent conductive oxide film of electrode before hull cell on the substrate；（C）Transparent led described
Oxide film surface deposits cadmium sulphide membrane；（D）Cadimium telluride thin film is deposited on the cadmium sulphide membrane；（E）To described
Cadimium telluride thin film is surface-treated；（F）Buffer layer on Cadimium telluride thin film after the treatment；（G）In the buffering
Layer surface deposited metal back electrode；（H）Lamination is packaged to the battery after deposited metal back electrode；（I）By the sun of lamination
Energy battery component additional certain electric current under conditions of 80 ~ 300 DEG C, -2 minutes 5 seconds duration；（J）Overcurrent will be added
Solar cell module carries out illumination until peak power reaches stable.
The step（C）Middle cadmium sulphide membrane is deposited using gas phase conveying method.
The transparent conductive oxide is ITO, FTO or BZO.
The step（J）Light source is that xenon lamp, metal conform to lamp, Halogen lamp LED or outdoor light source, illumination ginseng used by illumination
Number is 1000W/m2.
Beneficial effects of the present invention：
The method of the present invention is on the basis of solar cell module impressed current, by improving the Cadimium telluride thin film sun
The temperature of energy battery component stablizes processing time to shorten peak power.Temperature raises, carrier concentration rise, carrier moving
When had a great influence by lattice scattering, and when temperature is low, lattice vibration is weaker, and lattice scattering effect is just small, so carrier moves
Shifting rate is big when temperature is high, so at high temperature, carrier concentration and mobility are high, when carrier is flowing through absorbed layer
During, part can be filled up faster and confines defect, accelerate Cadimium telluride thin film lamination solar cell module Pmax stabilizations
Time.
Embodiment
A kind of method of the stable cadmium telluride diaphragm solar module peak power of quickening of the present invention, including following must walk
Suddenly：（A）Substrate is provided；（B）Deposition is used as the transparent conductive oxide film of electrode before hull cell on the substrate；（C）
Cadmium sulphide membrane is deposited on the transparent conductive oxide film surface；（D）It is thin that cadmium telluride is deposited on the cadmium sulphide membrane
Film；（E）The Cadimium telluride thin film is surface-treated；（F）Buffer layer on Cadimium telluride thin film after the treatment；
（G）In the buffer-layer surface deposited metal back electrode；（H）Lamination is packaged to the battery after deposited metal back electrode；（I）
By the solar cell module of lamination under conditions of 80 ~ 300 DEG C additional certain electric current, -2 minutes 5 seconds duration；（J）
The solar cell module for adding overcurrent is subjected to illumination until peak power reaches stable.
For the profound meaning for the present invention that is more convenient for understanding, the present invention based on the above method includes following examples：
Embodiment 1
It is a kind of method for accelerating stable cadmium telluride diaphragm solar module peak power described in the present embodiment, first will too
Positive energy assembly temperature maintains 80-180 DEG C, and then additional impressed current, impressed current continue 15 seconds, afterwards again by solar energy mould
Block carries out 1000W/m2 illumination, and until peak power reaches, to stablize the light source can be that xenon lamp, metal conform to lamp, Halogen lamp LED, family
Outer light source.
Embodiment 2
It is a kind of method for accelerating stable cadmium telluride diaphragm solar module peak power described in the present embodiment, first will too
Positive energy assembly temperature maintains 80-180 DEG C, then additional certain electric current, and impressed current continues 1 minute, afterwards again by the sun
Can module carry out 1000W/m2 illumination to stablize the light source can be that xenon lamp, metal conform to lamp, halogen until peak power reaches
Lamp, outdoor light source.
Embodiment 3
It is a kind of method for accelerating stable cadmium telluride diaphragm solar module peak power described in the present embodiment, first will too
Positive energy assembly temperature maintains 80-180 DEG C, then additional certain electric current, and impressed current continues 2 minutes, afterwards again by the sun
Can module carry out 1000W/m2 illumination to stablize the light source can be that xenon lamp, metal conform to lamp, halogen until peak power reaches
Lamp, outdoor light source.
Embodiment 4
It is a kind of method for accelerating stable cadmium telluride diaphragm solar module peak power described in the present embodiment, first will too
Positive energy assembly temperature maintains 180-300 DEG C, then additional certain electric current, and impressed current continues 15 seconds, afterwards again by the sun
Can module carry out 1000W/m2 illumination to stablize the light source can be that xenon lamp, metal conform to lamp, halogen until peak power reaches
Lamp, outdoor light source.
Embodiment 5
It is a kind of method for accelerating stable cadmium telluride diaphragm solar module peak power described in the present embodiment, first will too
Positive energy assembly temperature maintains 180-300 DEG C, then additional certain electric current, and impressed current continues 1 minute, afterwards again by the sun
Can module carry out 1000W/m2 illumination to stablize the light source can be that xenon lamp, metal conform to lamp, halogen until peak power reaches
Lamp, outdoor light source.
Embodiment 6
It is a kind of method for accelerating stable cadmium telluride diaphragm solar module peak power described in the present embodiment, first will too
Positive energy assembly temperature maintains 180-300 DEG C, then additional certain electric current, and impressed current continues 2 minutes, afterwards again by the sun
Can module carry out 1000W/m2 illumination to stablize the light source can be that xenon lamp, metal conform to lamp, halogen until peak power reaches
Lamp, outdoor light source.
The preferred embodiments of the present invention are the foregoing is only, the present invention is not limited to above-mentioned embodiment, as long as with
Essentially identical means realize that the technical scheme of the object of the invention is belonged within protection scope of the present invention.
Claims (4)
- A kind of 1. method for accelerating stable cadmium telluride diaphragm solar module peak power, it is characterised in that comprise the following steps： （A）Substrate is provided；（B）Deposition is used as the transparent conductive oxide film of electrode before hull cell on the substrate；（C）Institute State transparent conductive oxide film surface deposition cadmium sulphide membrane；（D）Cadimium telluride thin film is deposited on the cadmium sulphide membrane； （E）The Cadimium telluride thin film is surface-treated；（F）Buffer layer on Cadimium telluride thin film after the treatment；（G） The buffer-layer surface deposited metal back electrode；（H）Lamination is packaged to the battery after deposited metal back electrode；（I）By layer The solar cell module of pressure additional certain electric current under conditions of 80 ~ 300 DEG C, -2 minutes 5 seconds duration；（J）It will add The solar cell module of overcurrent carries out illumination until peak power reaches stable.
- 2. a kind of method for accelerating stable cadmium telluride diaphragm solar module peak power according to claim 1, it is special Sign is:The step（C）Middle cadmium sulphide membrane is deposited using gas phase conveying method.
- 3. a kind of method for accelerating stable cadmium telluride diaphragm solar module peak power according to claim 1, it is special Sign is:The transparent conductive oxide is ITO, FTO or BZO.
- 4. a kind of method for accelerating stable cadmium telluride diaphragm solar module peak power according to claim 1, it is special Sign is:The step（J）Light source is that xenon lamp, metal conform to lamp, Halogen lamp LED or outdoor light source, illumination ginseng used by illumination Number is 1000W/m2.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610806986.0A CN106252464B (en) | 2016-09-07 | 2016-09-07 | A kind of method for accelerating stable cadmium telluride diaphragm solar module peak power |
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| CN201610806986.0A CN106252464B (en) | 2016-09-07 | 2016-09-07 | A kind of method for accelerating stable cadmium telluride diaphragm solar module peak power |
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| CN106252464A CN106252464A (en) | 2016-12-21 |
| CN106252464B true CN106252464B (en) | 2017-11-10 |
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| CN111969084B (en) * | 2020-09-24 | 2022-07-19 | 成都中建材光电材料有限公司 | Method for improving stability of cadmium telluride cell |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103650168A (en) * | 2011-06-28 | 2014-03-19 | 法国圣戈班玻璃厂 | Method for quickly stabilizing the nominal output of a thin-film solar module |
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| US9105799B2 (en) * | 2013-06-10 | 2015-08-11 | Tsmc Solar Ltd. | Apparatus and method for producing solar cells using light treatment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103650168A (en) * | 2011-06-28 | 2014-03-19 | 法国圣戈班玻璃厂 | Method for quickly stabilizing the nominal output of a thin-film solar module |
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