CN106252431A - 一种CdSZnO核壳纳米棒阵列结构的制备方法 - Google Patents

一种CdSZnO核壳纳米棒阵列结构的制备方法 Download PDF

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CN106252431A
CN106252431A CN201610655622.7A CN201610655622A CN106252431A CN 106252431 A CN106252431 A CN 106252431A CN 201610655622 A CN201610655622 A CN 201610655622A CN 106252431 A CN106252431 A CN 106252431A
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潘忠宁
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Abstract

一种CdSZnO核壳纳米棒阵列结构的制备方法，称取 0.74ｇ硝酸锌、0.35ｇ六次甲基四胺溶解于蒸馏水中，磁力搅拌20min，取上述澄清溶液倒入反应釜中，并将FTO导电玻璃倾斜放入，于100℃烘箱中水热反应９ｈ，冷却至室温取出FTO导电玻璃用无水乙醇和蒸馏水分别冲洗4次后，室温干燥后于380‑390℃煅烧20‑25min，自然冷却至室温即得ＺｎＯ纳米棒阵列，以ＺｎＯ纳米棒阵列为工作电极、Ｐｔ电极为对电极，在含有0.63ｇ氯化镉、0.3ｇ硫粉的二甲亚砜溶液中，控制电流为15ｍＡ，于100‑105℃下电沉积50s的ＣｄＳ纳米晶，产品再依次用二甲亚砜和无水乙醇冲洗2次后，于380‑390℃煅烧20‑25min，冷却至室温。本发明的有益效果是：拓宽和加强电池的光吸收能力，有利于提高电池的光电性能。

Description

一种CdSZnO核壳纳米棒阵列结构的制备方法
技术领域
本发明涉及材料合成方法，具体的是一种CdSZnO核壳纳米棒阵列结构的制备方法。
背景技术
量子点敏化太阳能电池作为第三代太阳能电池，具有生产成本低廉、工艺简单及稳定性好等优点，是近年来的研究热点之一。ZnO作为一种优异的无机半导体材料，成为太阳能电池研究较多的材料，但其禁带宽度约为3.2ｅＶ，仅吸收紫外光，这限制其对可见光的利用。为进一步提高ZnO的光电性能，将ＣｄＳ、ＣｄＳｅ、ＰｂＳ和ＰｂＳｅ等纳米晶作为敏化剂沉积在ＺｎＯ上组装成光电极，拓宽光吸收范围，从而改善太阳能电池的光电性能。目前纳米晶的制备方法主要有连续离子层吸附反应法、化学浴沉积法、电化学沉积法和激光烧蚀法等， 其中电化学沉积法以其操作工艺简单、反应条件温和、成本低、沉积速率高以及适合于复杂基底制膜等优点，受到研究者们的广泛关注。
发明内容
本发明所要解决的技术问题在于提供一种CdSZnO核壳纳米棒阵列结构的制备方法，提供一种新的合成方法。
本发明采用的合成方法，包括如下步骤：
称取 0.74ｇ硝酸锌、0.35ｇ六次甲基四胺溶解于蒸馏水中，磁力搅拌20min使其混合均匀，取上述澄清溶液倒入反应釜中，并将FTO导电玻璃倾斜放入聚四氟乙烯反应釜中，于100℃烘 箱中水热反应９ｈ，反应结束后待反应釜冷却至室温，取出FTO导电玻璃用无水乙醇和蒸馏水分别冲洗4次后，室温干燥后于380-390℃煅烧20-25min，自然冷却至室温即得ＺｎＯ纳米棒阵列，以ＺｎＯ纳米棒阵列为工作电极、Ｐｔ电极为对电极，在含有0.63ｇ氯化镉、0.3ｇ硫粉的二甲亚砜溶液中，控制电流为15ｍＡ，于100-105℃下电沉积50s的ＣｄＳ纳米晶，所得样品依次用二甲亚砜和无水乙醇冲洗2次后，于380-390℃煅烧20-25min，自然冷却至室温即得ＣｄＳ／ＺｎＯ核壳纳米棒阵列。
本发明的有益效果是：ＣｄＳ 纳米晶在ＺｎＯ纳米棒阵列上的沉积，拓宽和加强电池的光吸收能力；且ＣｄＳ与ＺｎＯ形成一种阶梯式能级结构，可以有效调控光生载流子的传输，有利于提高电池的光电性能。
具体实施方式
以下结合实例进一步说明本发明的内容，由技术常识可知，本发明也可通过其它的不脱离本发明技术特征的方案来描述，因此所有在本发明范围内或等同本发明范围内的改变均被本发明包含。
实施例1：
称取 0.74ｇ硝酸锌、0.35ｇ六次甲基四胺溶解于蒸馏水中，磁力搅拌20min使其混合均匀，取上述澄清溶液倒入反应釜中，并将FTO导电玻璃倾斜放入聚四氟乙烯反应釜中，于100℃烘 箱中水热反应９ｈ，反应结束后待反应釜冷却至室温，取出FTO导电玻璃用无水乙醇和蒸馏水分别冲洗4次后，室温干燥后于380℃煅烧20min，自然冷却至室温即得ＺｎＯ纳米棒阵列，以ＺｎＯ纳米棒阵列为工作电极、Ｐｔ电极为对电极，在含有0.63ｇ氯化镉、0.3ｇ硫粉的二甲亚砜溶液中，控制电流为15ｍＡ，于100℃下电沉积50s的ＣｄＳ纳米晶，所得样品依次用二甲亚砜和无水乙醇冲洗2次后，于380℃煅烧20min，自然冷却至室温即得ＣｄＳ／ＺｎＯ核壳纳米棒阵列。
实施例2：
称取 0.74ｇ硝酸锌、0.35ｇ六次甲基四胺溶解于蒸馏水中，磁力搅拌20min使其混合均匀，取上述澄清溶液倒入反应釜中，并将FTO导电玻璃倾斜放入聚四氟乙烯反应釜中，于100℃烘 箱中水热反应９ｈ，反应结束后待反应釜冷却至室温，取出FTO导电玻璃用无水乙醇和蒸馏水分别冲洗4次后，室温干燥后于390℃煅烧25min，自然冷却至室温即得ＺｎＯ纳米棒阵列，以ＺｎＯ纳米棒阵列为工作电极、Ｐｔ电极为对电极，在含有0.63ｇ氯化镉、0.3ｇ硫粉的二甲亚砜溶液中，控制电流为15ｍＡ，于105℃下电沉积50s的ＣｄＳ纳米晶，所得样品依次用二甲亚砜和无水乙醇冲洗2次后，于390℃煅烧min，自然冷却至室温即得ＣｄＳ／ＺｎＯ核壳纳米棒阵列。
通过实验，ＣｄＳ 纳米晶在ＺｎＯ纳米棒阵列上的沉积，拓宽和加强电池的光吸收能力；且ＣｄＳ与ＺｎＯ形成一种阶梯式能级结构，可以有效调控光生载流子的传输，有利于提高电池的光电性能。当ＣｄＳ纳米晶沉积时间为50ｓ时，电池的短路电流和转换效率分别达到4.35ｍA/cm２和1.21％。

Claims (1)

1.一种CdSZnO核壳纳米棒阵列结构的制备方法，其特征在于：称取 0.74ｇ硝酸锌、0.35ｇ六次甲基四胺溶解于蒸馏水中，磁力搅拌20min使其混合均匀，取上述澄清溶液倒入反应釜中，并将FTO导电玻璃倾斜放入聚四氟乙烯反应釜中，于100℃烘 箱中水热反应９ｈ，反应结束后待反应釜冷却至室温，取出FTO导电玻璃用无水乙醇和蒸馏水分别冲洗4次后，室温干燥后于380-390℃煅烧20-25min，自然冷却至室温即得ＺｎＯ纳米棒阵列，以ＺｎＯ纳米棒阵列为工作电极、Ｐｔ电极为对电极，在含有0.63ｇ氯化镉、0.3ｇ硫粉的二甲亚砜溶液中，控制电流为15ｍＡ，于100-105℃下电沉积50s的ＣｄＳ纳米晶，所得样品依次用二甲亚砜和无水乙醇冲洗2次后，于380-390℃煅烧20-25min，自然冷却至室温即得。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108269698A (zh) * 2018-02-06 2018-07-10 太原理工大学 一种金属硫化物的电化学制备方法及其应用
CN112899721A (zh) * 2021-01-18 2021-06-04 西北农林科技大学 一种三维ZnO/CdS纳米阵列电极及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102220615A (zh) * 2011-05-13 2011-10-19 中国科学院理化技术研究所 制备CdS/ZnO纳米管阵列光电极的方法
CN102412369A (zh) * 2011-10-14 2012-04-11 中国科学院等离子体物理研究所 一种有机/无机杂化太阳电池及其制备方法
CN102543471A (zh) * 2012-01-17 2012-07-04 西安交通大学 CdS、CdSe量子点分段复合敏化双层ZnO纳米棒光阳极的制备方法
CN103066154A (zh) * 2012-12-31 2013-04-24 东华大学 一种ZnO/CdS/Cu2ZnSnS4 pn 结纳米棒阵列的制备方法
CN105498802A (zh) * 2015-12-04 2016-04-20 福州大学 一种氧化锌-金-硫化镉三元复合型光催化剂

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102220615A (zh) * 2011-05-13 2011-10-19 中国科学院理化技术研究所 制备CdS/ZnO纳米管阵列光电极的方法
CN102412369A (zh) * 2011-10-14 2012-04-11 中国科学院等离子体物理研究所 一种有机/无机杂化太阳电池及其制备方法
CN102543471A (zh) * 2012-01-17 2012-07-04 西安交通大学 CdS、CdSe量子点分段复合敏化双层ZnO纳米棒光阳极的制备方法
CN103066154A (zh) * 2012-12-31 2013-04-24 东华大学 一种ZnO/CdS/Cu2ZnSnS4 pn 结纳米棒阵列的制备方法
CN105498802A (zh) * 2015-12-04 2016-04-20 福州大学 一种氧化锌-金-硫化镉三元复合型光催化剂

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108269698A (zh) * 2018-02-06 2018-07-10 太原理工大学 一种金属硫化物的电化学制备方法及其应用
CN112899721A (zh) * 2021-01-18 2021-06-04 西北农林科技大学 一种三维ZnO/CdS纳米阵列电极及其制备方法

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