CN106229267A - A kind of cryogenic fluid preparation method of high mobility zinc-tin oxygen thin film transistor (TFT) - Google Patents
A kind of cryogenic fluid preparation method of high mobility zinc-tin oxygen thin film transistor (TFT) Download PDFInfo
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- CN106229267A CN106229267A CN201610821770.1A CN201610821770A CN106229267A CN 106229267 A CN106229267 A CN 106229267A CN 201610821770 A CN201610821770 A CN 201610821770A CN 106229267 A CN106229267 A CN 106229267A
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- zinc
- tin
- tin oxygen
- thin film
- tft
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- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 title claims abstract description 99
- 239000010409 thin film Substances 0.000 title claims abstract description 64
- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- 239000012530 fluid Substances 0.000 title claims abstract description 16
- 239000002243 precursor Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000010408 film Substances 0.000 claims abstract description 24
- 238000000137 annealing Methods 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 238000013019 agitation Methods 0.000 claims abstract description 8
- 239000002904 solvent Substances 0.000 claims abstract description 6
- 150000003839 salts Chemical class 0.000 claims abstract description 5
- 150000003751 zinc Chemical class 0.000 claims abstract description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 9
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 6
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 235000014121 butter Nutrition 0.000 claims description 4
- YJGJRYWNNHUESM-UHFFFAOYSA-J triacetyloxystannyl acetate Chemical compound [Sn+4].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O YJGJRYWNNHUESM-UHFFFAOYSA-J 0.000 claims description 4
- 235000005074 zinc chloride Nutrition 0.000 claims description 4
- 239000011592 zinc chloride Substances 0.000 claims description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000004246 zinc acetate Substances 0.000 claims description 3
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 2
- 229910021626 Tin(II) chloride Inorganic materials 0.000 claims description 2
- 238000003618 dip coating Methods 0.000 claims description 2
- 238000001548 drop coating Methods 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 238000007641 inkjet printing Methods 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 238000002663 nebulization Methods 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 238000010422 painting Methods 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 239000001119 stannous chloride Substances 0.000 claims description 2
- 235000011150 stannous chloride Nutrition 0.000 claims description 2
- 229910021653 sulphate ion Inorganic materials 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 claims 1
- 229960001763 zinc sulfate Drugs 0.000 claims 1
- 229910000368 zinc sulfate Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 3
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 23
- 229910052738 indium Inorganic materials 0.000 description 6
- 239000007791 liquid phase Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 5
- 238000005303 weighing Methods 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000006193 liquid solution Substances 0.000 description 3
- 235000013904 zinc acetate Nutrition 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000006184 cosolvent Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000001117 sulphuric acid Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- DJWUNCQRNNEAKC-UHFFFAOYSA-L zinc acetate Chemical class [Zn+2].CC([O-])=O.CC([O-])=O DJWUNCQRNNEAKC-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
Abstract
The invention belongs to quasiconductor and field of microelectronic devices, particularly to the cryogenic fluid preparation method of a kind of high mobility zinc-tin oxygen thin film transistor (TFT).Comprising the steps: to weigh the zinc salt of solubility, pink salt, measure solvent, configuration concentration is the zinc-tin oxygen precursor solution of 0.01 0.5 mol/L, forms the zinc-tin oxygen precursor solution of clear through the magnetic agitation of 0.1 3 hours and ultrasonic disperse；Prepare zinc tin oxide film: be coated to be pre-coated with by zinc-tin oxygen precursor solution on the substrate of dielectric layer/grid thin film form zinc-tin oxygen precursor thin-film, carry out the pre-heat treatment of 50 150 DEG C, it is then passed through the light wave annealing of certain power, time and temperature, thickness requirement according to zinc tin oxide film can repeatedly coat presoma zinc-tin oxygen solution and make annealing treatment, and i.e. obtains zinc-tin oxygen transparent semiconductor film.Sedimentary origin drain electrode on zinc-tin oxygen transparent semiconductor film, i.e. obtains zinc-tin oxygen thin film transistor (TFT).Gained zinc-tin oxygen thin-film transistor performance of the present invention is high, has important application prospect at information electronic applications.Common pyrosol technique, process cycle length or expensive device etc., low cost can be avoided by the technique of the present invention, be suitable for industrialization large-scale production.
Description
Technical field
The invention belongs to quasiconductor and field of microelectronic devices, particularly to a kind of high mobility zinc-tin oxygen thin film transistor (TFT)
Cryogenic fluid preparation method, zinc-tin oxygen thin film transistor (TFT) has important application prospect in fields such as information electronics.
Background technology
After entering 21st century, display device has become as people and obtains information, carries out the primary terminal of information exchange
Equipment, thin film transistor (TFT) (Thin Film Transistor) is as whole to display device of the Primary Component of active matrix driving technology
Body performance has very important impact.Up to the present, what development was the most ripe is amorphous silicon film transistor and polysilicon
Thin film transistor (TFT).But the shortcoming of the amorphous silicon transistor low (< 1cm that is carrier mobility2/ Vs), it is difficult to meet organic light emission
The requirement that diode current drives, a-Si:H transistor is easily by illumination effect simultaneously so that job stability is poor；Polysilicon
Production of Transistor technics comparing is complicated, relatively costly, and the restriction of Stimulated Light crystallization process simultaneously is in large size relatively difficult.Warp
Studying after for many years, the shortcoming of silicon-based transistor is difficult to be improved, and thin using non-crystal oxide quasiconductor as channel layer
Film transistor is developed rapidly, and the advantage of non-crystal oxide transistor is: carrier mobility is higher, device synthesis
Excellent performance, mature preparation process, above-mentioned advantage makes it have the biggest using value.
2004, the Hosono group of Tokyo Institute of Technology delivered amorphous on famous academic journal " Nature "
Indium gallium zinc oxygen thin film transistor (TFT).The carrier mobility of this indium gallium zinc oxygen transistor is 10 cm2/ Vs, switch current ratio reaches
106.Since then, the extensive concern of scientific research personnel is caused based on the multicomponent amorphous oxide of amorphous indium gallium zinc oxygen.Along with
In and Ga is in the extensive application of conductive material, thin-film solar cells and flat display field in recent years so that material
Being substantially improved of price, in addition, owing to indium metal reserves in the earth's crust are few, thus has become as the strategic material of various countries.
Therefore research other materials replaces In and Ga to become more and more important.And zinc-tin oxygen thin film transistor (TFT) is exactly the most most representative
One.
The method preparing zinc-tin oxygen thin film transistor (TFT) at present is varied, mainly includes vapor phase method and the big class of liquid phase method two.
Such as, to be all used to prepare zinc-tin oxygen thin for the method such as magnetron sputtering, electron beam evaporation, ald and chemical gaseous phase deposition
Film.But, these gas phase process typically require vacuum environment, add the complexity of equipment, improve cost.In recent years, liquid phase
Method day by day causes and pays close attention to widely, has obtained rapid development, such as sol-gel process, spray pyrolysis etc..In recent years
The research report of the liquid phase method synthesis zinc tin oxide film of development has many.Such as, the middle promulgated by the State Council of Publication No. CN103022077A
Bright patent discloses the preparation method of the zinc-tin oxide thin film of a kind of thin film transistor (TFT), including by the presoma material containing zinc ion
Material, persursor material containing tin ion and cosolvent are dissolved in solvent, fully dissolve, obtain precursor solution；And will
Precursor solution carries out the steps such as heat treatment process after being coated into thin film on cloth cover to be coated..Can be seen by foregoing invention patent
Go out, although liquid phase method can prepare the zinc-tin oxygen thin film transistor (TFT) of superior performance, but liquid phase method typically requires high temperature (higher than 400
DEG C) annealing, precursor thin-film just can be promoted to decompose and densification, form fine and close zinc tin oxide film.Therefore, find a kind of new
Low temperature liquid phase technology of preparing, is particularly important and urgent for the zinc-tin oxygen thin film transistor (TFT) large-scale application in various fields
's.
Summary of the invention
It is an object of the invention to provide the cryogenic fluid preparation method of a kind of high mobility zinc-tin oxygen thin film transistor (TFT), real
Prepared by the simple and efficient of existing zinc-tin oxygen thin film transistor (TFT), it is easier to large-scale production and application.The innovative point of the present invention mainly exists
In: develop new low temperature light wave method and efficiently prepare zinc-tin oxygen thin film transistor (TFT).
Technical scheme, specifically includes following steps:
(1) preparing zinc-tin oxygen precursor solution: weigh the zinc salt of solubility, pink salt, measure solvent, configuration concentration is 0.01-
The zinc-tin oxygen precursor solution of 0.5 mol/L, forms clear through the magnetic agitation of 0.1-3 hour and ultrasonic disperse
Zinc-tin oxygen precursor solution；
(2) zinc tin oxide film is prepared: zinc-tin oxygen precursor solution is coated to be pre-coated with the substrate of dielectric layer/grid thin film
Upper formation zinc-tin oxygen precursor thin-film, carries out the pre-heat treatment of 50-150 DEG C, is then passed through certain power, time and temperature
Light wave is annealed, and can repeatedly coat presoma zinc-tin oxygen solution according to the thickness requirement of zinc tin oxide film and make annealing treatment, i.e. obtaining
Zinc-tin oxygen transparent semiconductor film.
(3) prepare zinc-tin oxygen thin film transistor (TFT): sedimentary origin drain electrode on zinc-tin oxygen transparent semiconductor film, i.e. obtain
Zinc-tin oxygen thin film transistor (TFT).
In the step (1) of preparation method of the present invention, the zinc salt of described solubility is zinc nitrate, zinc chloride, sulphuric acid
One or more in zinc or zinc acetate.
In the step (1) of preparation method of the present invention, the pink salt of described solubility is nitric acid stannum, butter of tin, chlorine
Change in stannous, STANNOUS SULPHATE CRYSTALLINE or tin acetate one or more.
In the step (1) of preparation method of the present invention, described solvent be ethylene glycol monomethyl ether, ethanol, water, ethylene glycol or
One or more in dimethylformamide.
In the step (1) of preparation method of the present invention, described painting method be spin coating method, drop-coating, dip coating,
Nebulization or ink-jet printing process.
In the step (1) of preparation method of the present invention, described dielectric layer is silicon oxide, zirconium oxide, hafnium oxide, oxidation
One or more in aluminum, yittrium oxide or lanthana.
In the step (1) of preparation method of the present invention, in the step (1) of preparation method of the present invention, described light
The instrument that generates of ripple is as the light-wave cooker of kitchen tools or to have the heating instrument of halogen lamp tube.
In the step (1) of preparation method of the present invention, the power of described light wave annealing is 100-900 W.
In the step (1) of preparation method of the present invention, the time of described light wave annealing is 5-120 minute.
In the step (1) of preparation method of the present invention, the described temperature in light wave annealing process is 100-300 DEG C.
In the step (1) of preparation method of the present invention, described source-drain electrode be aluminum, copper, silver, molybdenum, tin indium oxide or
One or more in gold thin film.
The invention has the beneficial effects as follows: present invention process the most easily operates, cheaper starting materials is easy to get, prepared zinc-tin oxygen
Thin-film transistor performance is high.Common pyrosol technique, process cycle length or costliness can be avoided by the technique of the present invention
Equipment etc., low cost, it is suitable for industrialization large-scale production.
Accompanying drawing explanation
The present invention is further illustrated below in conjunction with the accompanying drawings.
Accompanying drawing 1 is the device junction composition of the zinc-tin oxygen thin film transistor (TFT) of one of embodiment；
Accompanying drawing 2 be the zinc-tin oxygen thin film transistor (TFT) of one of embodiment transfer characteristic curve.
Detailed description of the invention
The present invention is further illustrated with specific embodiment below in conjunction with the accompanying drawings.
Embodiment 1:
Weighing 0.682 g zinc chloride, 1.753 g butters of tin, measure 10 milliliters of ethylene glycol monomethyl ether solution, configuration concentration is 0.5
The zinc-tin oxygen precursor solution of mol/L, before the magnetic agitation of 3 hours and ultrasonic disperse form the zinc-tin oxygen of clear
Drive liquid solution.It is coated to zinc-tin oxygen precursor solution be pre-coated with in the monocrystalline substrate of silicon oxide forming zinc-tin oxygen presoma
Thin film, carries out the pre-heat treatment of 50 DEG C, is then passed through the light wave annealing of 300W, 60 minutes and 200 DEG C, i.e. obtains zinc-tin oxygen saturating
Bright semiconductive thin film.Sedimentary origin drain electrode on zinc-tin oxygen transparent semiconductor film, i.e. obtains zinc-tin oxygen thin film transistor (TFT).
Embodiment 2:
Weighing 0.0136 g zinc chloride, 0.0225 g stannous chloride, measure 10 milliliters of ethanol solution, configuration concentration is 0.01 to rub
You/liter zinc-tin oxygen precursor solution, before the magnetic agitation of 0.1 hour and ultrasonic disperse form the zinc-tin oxygen of clear
Drive liquid solution.It is coated to zinc-tin oxygen precursor solution be pre-coated with on zirconic indium oxide tin glass forming zinc-tin oxygen forerunner
Body thin film, carries out the pre-heat treatment of 150 DEG C, is then passed through the light wave annealing of 700W, 30 minutes and 280 DEG C, i.e. obtains zinc-tin
Oxygen transparent semiconductor film.Sedimentary origin drain electrode on zinc-tin oxygen transparent semiconductor film, i.e. obtains zinc-tin oxygen thin film transistor (TFT).
Embodiment 3:
Weighing 0.1488 g zinc nitrate, 0.1184 g tin acetate, measure 5 milliliters of aqueous solutions, configuration concentration is 0.1 mol/L
Zinc-tin oxygen precursor solution, forms the zinc-tin oxygen precursor solution of clear through the magnetic agitation of 1 hour and ultrasonic disperse.
It is coated to zinc-tin oxygen precursor solution be pre-coated with in the monocrystalline substrate of aluminium oxide forming zinc-tin oxygen precursor thin-film, carries out
The pre-heat treatment of 90 DEG C, is then passed through the light wave annealing of 900W, 5 minutes and 300 DEG C, i.e. obtains zinc-tin oxygen transparent semiconductor thin
Film.Sedimentary origin drain electrode on zinc-tin oxygen transparent semiconductor film, i.e. obtains zinc-tin oxygen thin film transistor (TFT).
Embodiment 4:
Weighing 0.184 g zinc acetate, 0.237 g tin acetate, measure 20 milliliters of ethylene glycol solutions, configuration concentration is 0.05 mole/
The zinc-tin oxygen precursor solution risen, forms the zinc-tin oxygen presoma of clear through the magnetic agitation of 2 hours and ultrasonic disperse
Solution.Zinc-tin oxygen precursor solution is coated to is pre-coated with on the indium oxide tin glass of lanthana forming zinc-tin oxygen presoma thin
Film, carries out the pre-heat treatment of 120 DEG C, is then passed through the light wave annealing of 500W, 20 minutes and 250 DEG C, i.e. obtains zinc-tin oxygen saturating
Bright semiconductive thin film.Sedimentary origin drain electrode on zinc-tin oxygen transparent semiconductor film, i.e. obtains zinc-tin oxygen thin film transistor (TFT).
Embodiment 5:
Weighing 1.376 g zinc acetates, 2.63 g butters of tin, measure 15 milliliters of dimethyl formamide solutions, configuration concentration is 0.5
The zinc-tin oxygen precursor solution of mol/L, before the magnetic agitation of 3 hours and ultrasonic disperse form the zinc-tin oxygen of clear
Drive liquid solution.It is coated to zinc-tin oxygen precursor solution be pre-coated with in the monocrystalline substrate of yittrium oxide forming zinc-tin oxygen presoma
Thin film, carries out the pre-heat treatment of 70 DEG C, is then passed through the light wave annealing of 100W, 120 minutes and 150 DEG C, i.e. obtains zinc-tin oxygen
Transparent semiconductor film.Sedimentary origin drain electrode on zinc-tin oxygen transparent semiconductor film, i.e. obtains zinc-tin oxygen thin film transistor (TFT).
Above-described embodiment combines accompanying drawing and is described the detailed description of the invention of the present invention, but not protects the present invention
The restriction of scope.One of ordinary skill in the art should be understood that on the basis of technical scheme, those skilled in the art
Need not pay the various amendments to the present invention or the deformation that creative work can be made, still protection scope of the present invention with
In.
Claims (11)
1. the cryogenic fluid preparation method of a high mobility zinc-tin oxygen thin film transistor (TFT), it is characterised in that comprise the steps:
(1) preparing zinc-tin oxygen precursor solution: weigh the zinc salt of solubility, pink salt, measure solvent, configuration concentration is 0.01-
The zinc-tin oxygen precursor solution of 0.5 mol/L, forms clear through the magnetic agitation of 0.1-3 hour and ultrasonic disperse
Zinc-tin oxygen precursor solution；
(2) prepare zinc tin oxide film: be coated to zinc-tin oxygen precursor solution to be pre-coated with dielectric layer/grid thin film lining
Form zinc-tin oxygen precursor thin-film at the end, carry out the pre-heat treatment of 50-150 DEG C, be then passed through certain power, time and temperature
Light wave annealing, can repeatedly coat presoma zinc-tin oxygen solution according to the thickness requirement of zinc tin oxide film and make annealing treatment, obtaining
Zinc-tin oxygen transparent semiconductor film；
(3) prepare zinc-tin oxygen thin film transistor (TFT): sedimentary origin drain electrode on zinc-tin oxygen transparent semiconductor film, i.e. obtain zinc-tin
Oxygen thin film transistor (TFT)；
The instrument that generates of described light wave is as the light-wave cooker of kitchen tools or to have the heating instrument of halogen lamp tube.
The cryogenic fluid preparation method of a kind of high mobility zinc-tin oxygen thin film transistor (TFT) the most according to claim 1, it is special
Levy and be: the zinc salt of described solubility is one or more in zinc nitrate, zinc chloride, zinc sulfate or zinc acetate.
The cryogenic fluid preparation method of a kind of high mobility zinc-tin oxygen thin film transistor (TFT) the most according to claim 1, it is special
Levy and be: the pink salt of described solubility be the one in nitric acid stannum, butter of tin, stannous chloride, STANNOUS SULPHATE CRYSTALLINE or tin acetate or
Two or more.
The cryogenic fluid preparation method of a kind of high mobility zinc-tin oxygen thin film transistor (TFT) the most according to claim 1, it is special
Levy and be: described solvent is one or more in ethylene glycol monomethyl ether, ethanol, water, ethylene glycol or dimethylformamide.
The cryogenic fluid preparation method of a kind of high mobility zinc-tin oxygen thin film transistor (TFT) the most according to claim 1, it is special
Levy and be: described painting method is spin coating method, drop-coating, dip coating, nebulization or ink-jet printing process.
The cryogenic fluid preparation method of a kind of high mobility zinc-tin oxygen thin film transistor (TFT) the most according to claim 1, it is special
Levy and be: described dielectric layer be in silicon oxide, zirconium oxide, hafnium oxide, aluminium oxide, yittrium oxide or lanthana one or both with
On.
The cryogenic fluid preparation method of a kind of high mobility zinc-tin oxygen thin film transistor (TFT) the most according to claim 1, it is special
Levy and be: described grid thin film is one or more in aluminum, copper, silver, molybdenum, tin indium oxide or gold thin film.
The cryogenic fluid preparation method of a kind of high mobility zinc-tin oxygen thin film transistor (TFT) the most according to claim 1, it is special
Levy and be: the power of described light wave annealing is 100-900 W.
The cryogenic fluid preparation method of a kind of high mobility zinc-tin oxygen thin film transistor (TFT) the most according to claim 1, it is special
Levy and be: the time of described light wave annealing is 5-120 minute.
The cryogenic fluid preparation method of a kind of high mobility zinc-tin oxygen thin film transistor (TFT) the most according to claim 1, it is special
Levy and be: the described temperature in light wave annealing process is 100-300 DEG C.
The cryogenic fluid preparation method of 11. a kind of high mobility zinc-tin oxygen thin film transistor (TFT)s according to claim 1, it is special
Levy and be: described source-drain electrode is one or more in aluminum, copper, silver, tin indium oxide or gold thin film.
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| CN112038216A (en) * | 2020-09-08 | 2020-12-04 | 重庆邮电大学 | P-type amorphous semiconductor film and preparation method of thin film transistor thereof |
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| US4874462A (en) * | 1987-12-09 | 1989-10-17 | Central Glass Company, Limited | Method of forming patterned film on substrate surface by using metal alkoxide sol |
| CN103828018A (en) * | 2011-01-28 | 2014-05-28 | 西北大学 | Low-temperature fabrication of metal oxide thin films and nanomaterial-derived metal composite thin films |
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2016
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4874462A (en) * | 1987-12-09 | 1989-10-17 | Central Glass Company, Limited | Method of forming patterned film on substrate surface by using metal alkoxide sol |
| CN103828018A (en) * | 2011-01-28 | 2014-05-28 | 西北大学 | Low-temperature fabrication of metal oxide thin films and nanomaterial-derived metal composite thin films |
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| CN112038216A (en) * | 2020-09-08 | 2020-12-04 | 重庆邮电大学 | P-type amorphous semiconductor film and preparation method of thin film transistor thereof |
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