CN106226994A - A kind of marking method based on ion beam etching and application - Google Patents
A kind of marking method based on ion beam etching and application Download PDFInfo
- Publication number
- CN106226994A CN106226994A CN201610797743.5A CN201610797743A CN106226994A CN 106226994 A CN106226994 A CN 106226994A CN 201610797743 A CN201610797743 A CN 201610797743A CN 106226994 A CN106226994 A CN 106226994A
- Authority
- CN
- China
- Prior art keywords
- ion beam
- substrate
- etching
- marking method
- method based
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Laser Beam Processing (AREA)
Abstract
The present invention relates to a kind of marking method based on ion beam etching and application, described marking method comprises the steps: to coat a layer photoetching glue-line at substrate surface；By patterned mask plate, utilize ultraviolet light that photoresist layer is exposed；Remove patterned mask plate, obtain patterned photoresist layer；By patterned photoresist layer, the place to be marked of substrate is performed etching by the ion beam using ion source to launch；Peel off patterned photoresist layer, obtain patterned substrate, it is achieved the labelling to substrate.The present invention carries out mark by the method for ion beam etching to product, the labelling lines sidewall etched is almost vertical, excessive lines broadening will not be produced, the labelling lines precision finally obtained is made to can reach a few ten nanometers level, far above laser marking machine tens micron-sized lines precision such that it is able to significantly improve the precision of mark.
Description
Technical field
The present invention relates to Mark technology, particularly relate to a kind of marking method based on ion beam etching and in mark field
Application.
Background technology
In addition to the most original ink marking machine, marking machine the most frequently used in prior art be generally divided into mechanical impact type (as
High frequency microshock marking machine and pneumatic marking machine), machinery scribing type (such as needle point scribing marking machine), electrochemistry type is (such as electrochemistry
Corrosion marking machine), and currently used LASER HEAT widest in area burns type (as semiconductor laser marking and optical-fiber laser are beaten
Marking machine) etc. type.These marking machines almost spread over the manufacturings such as machinery, the energy, electronics, communication, are mainly used in product business
The aspect such as mark, production information, anti-fake mark.The marking machine of above-mentioned several types, the advantage respectively having its own uniqueness, but the most all
Also exist clearly disadvantageous.
Mechanical impact type marking machine is using impact head as groundwork mechanism, impact head or by Electromagnetic Drive or
By compressed air-driven so that impact head constantly impacts the surface treating mark workpiece, surface of the work with a higher frequency
The part impacted deforms upon generation pit.Driven by a guiding mechanism that can arbitrarily move in the x-y directions
Impact head impacts in surface of the work optional position, carrys out the travel track of layout impact head by the figure that pre-edit is good, as
This just can stamp required permanent labelling at surface of the work.Due to powerful impulsive force can too small to diameter, material is hard
Spending low impact head and cause fatal damage, therefore the mechanical dimension of impact head can not be too small, so the labelling made is general
It is all large-sized；Impact head material is also restricted, such as can not mark on the higher material of hardness own is tapped the head in specific impulse.
So, mechanical impact type marking machine is only applicable to the thick lines of naked eyes visible range, the printing of low precision icon.
Needle point scribing marking machine is also dependent on the mechanical deformation of surface of the work and constitutes the marking machine of figure.Needle point scribing is beaten
The hard material such as such as diamond, diamond etc. that marking machine is inlayed with a microneedle pointed tip for scribing head, under two dimension drives
Surface of the work carries out scribing, thus forms labelling.Owing to scribing head can be by being machined into the size less than 1 millimeter, institute
With, compared with mechanical impact type marking machine, needle point scribing marking machine can process the finest minute pattern.
Electrochemical corrosion marking machine is to answer electrochemical principle, will pass through voltage with the word on markd masterplate and figure
The effect of both positive and negative polarity, positively charged mark liquid, as the ion of electrolyte, mark water and mark liquid medicine moves to negative pole, and with
Negative terminal surface is produced alkalescence effect formation insoluble matter and is deposited on surface of the work, prints mark at various conducting metal surface of the works
Know, such as stainless steel product mark, bearing marking etc..The processing technique of prior art, can make electrochemical corrosion mark make several
The lines of ten microns, the most several marking machine of resolution of mark is greatly improved, but owing to this technique can only be at conducting metal
Surface of the work prints mark, so the scope of application is restricted.
In prior art, the marking machine that range is the widest is laser marking machine, mainly includes CO2Laser marking machine, YAG
Laser marking machine, semiconductor laser marking and laser marking machine, with laser marking machine as Developing mainstream.Laser is beaten
The principle of marking machine is to utilize the laser of high-energy-density, through a complicated high-speed vibrating mirror scanning system, is arrived by laser beam projects
Need the position of mark, and be scanned with given pace, drastically raised at focus point by laser energy, moment workpiece produces
Raw high temperature, by workpiece surface material vaporization or make material generation qualitative change and form the change of color, thus is formed permanent
Labelling.Due to coherence and the high monochromaticity of laser, laser beam can focus to the most small size, and existing laser is beaten
The hot spot minimum dimension of marking machine can be as small as tens microns, can make the most small fine figure, be widely used in electronics
The fields such as product, IC, chip, medical science.
In prior art, to obtain the labelling of fine pattern, such as it is marked on micro devices, line size pole
Little anti-fake mark etc., using most is electrochemical corrosion marking machine and laser marking machine.
For electrochemical corrosion marking machine, owing to this technique can only print mark at conducting metal surface of the work,
Just cannot use on the material that polymer, pottery, silicon materials and other electric conductivity are relatively low, so the scope of application is greatly limited
System.It addition, chemical wet corrodes the etching for hachure is difficult to meet the requirement of reality application.
For laser marking machine, its scope of application is broad compared with electrochemical corrosion marking machine.But, owing to laser is beaten
Mark is that workpiece is processed by the heat that make use of laser high-energy-density to produce after focusing, therefore the generation gesture of high heat
The workpiece that is marked must be produced certain or excessive heat radiation effect.Such as, microscale workpieces is heated generation due to workpiece
Partly or wholly deformation, to workpiece beyond doubt one damage, even can cause scrapping of workpiece.Further, since heat is burnt not
Enough fully fused mass out that splashes at lines margin residual, reduce the resolution of labelling lines, so being difficult to obtain chi
Spend less, the more perfect labelling of image.
It would therefore be highly desirable to a kind of safety of exploitation is good and the higher marking method of fineness.
Summary of the invention
The technical problem to be solved in the present invention is, the highest for existing marking method fineness and easily cause workpiece become
The defect of shape, it is provided that a kind of marking method based on ion beam etching and the application of ion beam etching.
The invention provides a kind of marking method based on ion beam etching, described marking method comprises the steps:
S1: coat a layer photoetching glue-line at substrate surface；
S2: by patterned mask plate, utilizes ultraviolet light to be exposed photoresist layer；
S3: remove patterned mask plate, obtains patterned photoresist layer；
S4: by patterned photoresist layer, the place to be marked of substrate is carved by the ion beam using ion source to launch
Erosion；
S5: peel off patterned photoresist layer, obtains patterned substrate, it is achieved the labelling to substrate.
According in marking method based on ion beam etching of the present invention, described step S4 use ion source send out
The place to be marked of substrate is persistently performed etching by the ion beam penetrated, and the energy of ion beam is 400eV～600eV, ion beam current
Density is 0.4mA/cm2～0.6mA/cm2；Etch period is 5～10 minutes.
According in marking method based on ion beam etching of the present invention, described step S4 includes: once etch
Step, use high energy ion beam the place to be marked of substrate is performed etching, the ion beam energy of this high energy ion beam be 500eV～
600eV, ion beam current density is 0.55mA/cm2～0.6mA/cm2, etch period is 4～6 minutes；Secondarily etched step, uses
The place to be marked of substrate is performed etching by low energy ion beam, and the ion beam energy of described low energy ion beam is 400eV～460eV,
Ion beam current density is 0.42mA/cm2～0.45mA/cm2, etch period is 8～10 minutes.
According in marking method based on ion beam etching of the present invention, a described etch step and secondary are carved
Erosion step is spaced 1～2 minute.
According in marking method based on ion beam etching of the present invention, described step S4 places the substrate in and beats
On mark platform, described mark platform and ionogenic accelerating grid distance are 20cm～30cm.
According in marking method based on ion beam etching of the present invention, described step S4 intermediate ion bundle be helium from
Son bundle, ne ion bundle, ar-ion beam, krypton ion beam or xenon ion bundle.
According in marking method based on ion beam etching of the present invention, described substrate is quartz substrate.
According in marking method based on ion beam etching of the present invention, labelling on described patterned substrate
Etching depth is 100nm～300nm.
According in marking method based on ion beam etching of the present invention, labelling on described patterned substrate
Line thickness is 20nm～80nm.
Present invention also offers the marking method based on the ion beam etching application in mark field as above.
The technique scheme of the present invention has the advantage that product is carried out by the present invention by the method for ion beam etching
Mark, the labelling lines sidewall etched is almost vertical, will not produce excessive lines broadening so that the final mark obtained
The lines precision of note can reach a few ten nanometers level, far above laser marking machine tens micron-sized lines precision such that it is able to bright
The aobvious precision improving mark.
Accompanying drawing explanation
Fig. 1 is the flow chart of the marking method based on ion beam etching according to the preferred embodiment of the present invention；
Fig. 2 a～2f is respectively the signal of based on ion beam etching according to the preferred embodiment of the invention marking method process
Figure；
Fig. 3 is the marking device schematic diagram based on ion beam etching according to the preferred embodiment of the present invention.
Detailed description of the invention
For making the purpose of the embodiment of the present invention, technical scheme and advantage clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
A part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill people
The every other embodiment that member is obtained on the premise of not making creative work, broadly falls into the scope of protection of the invention.
Various structural representations, principle schematic and design sketch according to disclosure embodiment shown in the drawings.
These figures are not drawn to scale, wherein in order to understand the purpose of expression, are exaggerated some details, and may eliminate
Some details.Various regions shown in figure, the shape of layer and the relative size between them, position relationship are only examples
Property, reality is likely to be due to manufacturing tolerance or technical limitations and deviation, and those skilled in the art are according to actual institute
Need additionally to design that there is difformity, size, the regions/layers of relative position.
In the context of the disclosure, when one layer/element is referred to as positioned at another layer/element " on " time, this layer/element can
To be located immediately on this another layer/element, or intermediate layer/element between them, can be there is.If it addition, one towards
In one layer/element be positioned at another layer/element " on ", then when turn towards time, this layer/element may be located at this another layer/unit
Part D score.
Refer to Fig. 1, for the flow chart of the marking method based on ion beam etching according to the preferred embodiment of the present invention.Figure
2a～2f, is respectively based on ion beam etching according to the preferred embodiment of the invention marking method process schematic.Tie below
The marking method based on ion beam etching that closing Fig. 1 and Fig. 2 a～2f provides the present invention is described in detail.The present embodiment carries
The marking method of confession comprises the steps:
First, in step sl, at substrate 1 surface-coated one layer photoetching glue-line 2, as shown in Figure 2 a.This substrate 1 can be adopted
With the substrate of the material such as metal, alloy, nonmetal, compound, pottery, polymer, superconductor, such as semiconductor chip, electronics
Components and parts, optics, communication device, label panel, trade mark label, anti-fake mark, mini-plant and parts etc..Preferably, should
Substrate 1 is quartz substrate.
Subsequently, in step s 2, by patterned mask plate 3, utilize ultraviolet light that photoresist layer 2 is exposed, as
Shown in Fig. 2 b.The part that the most graphical mask plate of exposed part 3 of photoresist layer 2 blocks is exposed by ultraviolet light 4, such as figure
Shown in 2c.
Subsequently, in step s3, remove patterned mask plate 3, obtain patterned photoresist layer 2.In this step S3,
The figure of patterned photoresist layer 2 depends on the figure of patterned mask plate 3.
Subsequently, in step s 4, as shown in Figure 2 d, by patterned photoresist layer 3, the ion that ion source is launched is used
Restrainting the place to be marked to substrate 1 to perform etching, the product obtained is as shown in Figure 2 e.In this step S4, the exposed part of substrate 1 is i.e.
The part that the most graphical photoresist layer 2 blocks is the place to be marked of substrate 1.Preferably, the ion beam that step S4 uses is
Helium ion beam (He), ne ion bundle (Ne), ar-ion beam (Ar), krypton ion beam (Kr) or xenon ion bundle (Xe).
In some currently preferred embodiments of the present invention, step S4 use the ion beam that ion source is launched persistently to substrate 1
Place to be marked perform etching, and the ENERGY E of ion beami=400eV～600eV, ion beam current density Jb=0.4mA/cm2
～0.6mA/cm2.Preferably, the time persistently etched in this step is 5 minutes to 10 minutes.
In other preferred embodiments of the present invention, step S4 includes the ion beam pair using ion source to launch at twice
The place to be marked of substrate 1 performs etching.I.e. step S4 includes an etch step and secondarily etched step.First, once etch
Step use high energy ion beam the place to be marked of substrate 1 is performed etching, the ENERGY E of this high energy ion beami=500eV～
600eV, ion beam current density is Jb=0.55mA/cm2～0.6mA/cm2, etch period is 4～6 minutes；Secondarily etched step
The place to be marked of substrate 1 is performed etching by middle use low energy ion beam, the ENERGY E of this low energy ion beami=400eV～460eV,
Ion beam current density Jb=0.42mA/cm2～0.45mA/cm2, etch period is 8～10 minutes.Preferably, between twice etching
Interval is 1～2 minute.This embodiment uses the method for etching by several times, tentatively etches initially with high energy ion beam,
Using low energy ion beam finely to etch after separated in time, the sidewall that the substrate prepared etches lines is the most vertical
, line edge is clear and legible, thus reduces production cost while improving mark precision.
Finally, in step s 5, peel off patterned photoresist layer 2, obtain patterned substrate 1, as shown in figure 2f.Should
Step achieves the labelling to substrate 1, i.e. realizes the ion beam mark to substrate 1.
Refer to Fig. 3, for the marking device schematic diagram based on ion beam etching according to the preferred embodiment of the present invention.Such as figure
Shown in 3, this marking device includes ion source 6 and mark platform 7, and whole marking device is placed in vacuum environment.Wherein mark platform 7
For the fixing workpiece treating mark, such as substrate 1.The ion beam emittance direction of ion source 6 is perpendicular to mark platform 7.With argon ion
As a example by bundle, when on ion beam bombardment to substrate 1, due to the shock of argon ion, there is energy transmission cascade collision, thus promote
The atom of substrate 1 obtains energy, and when the energy got is more than the threshold energy of sputtering, then the atom of substrate 1 is sputtered out
Coming, therefore the position of ion beam bombardment just forms patterned labelling.In order to make ion beam farthest gather substrate 1
On, it is preferable that mark platform 7 is set to 20cm～30cm with the distance of accelerating grid in ion source 6.
Through detection, use the patterned substrate that the marking method based on ion beam etching of the present invention prepares, substrate
The etching depth of the labelling of upper formation is 100nm～300nm.And the line thickness of the labelling formed on substrate up to 20nm～
80nm, far above laser marking machine tens micron-sized lines precision such that it is able to significantly improve the precision of mark.
Additionally, compared with the laser marking of prior art, use the described marking method of the present invention that substrate is carried out mark,
The substrate material being etched away escapes its surface with atom form, and the atom of effusion is all taken away by vacuum pump, therefore substrate
Surface i.e. surface of the work does not have any residual, will not produce excessive lines broadening, make the line of the labelling finally obtained yet
Bar edge becomes apparent from distinguishing.The marking method of the present invention can also be applicable to the substrate of unlike material, is little affected by base sheet
The restriction of matter.
Present invention also offers the application in mark field of the above-mentioned marking method based on ion beam etching.The present invention is first
Ion beam etching technology is applied to product mark, is effectively improved mark precision.
In the above description, the ins and outs such as the composition of each layer, etching are not described in detail.But
It will be appreciated by those skilled in the art that and can form the layer of required form, region etc. by various technological means.It addition, be
Formation same structure, those skilled in the art can be devised by method the most identical with process as described above.
Although it addition, respectively describing each embodiment above, but it is not intended that the measure in each embodiment can not be favourable
Be used in combination.
Last it is noted that above example is only in order to illustrate technical scheme, it is not intended to limit；Although
With reference to previous embodiment, the present invention is described in detail, it will be understood by those within the art that: it still may be used
So that the technical scheme described in foregoing embodiments to be modified, or wherein portion of techniques feature is carried out equivalent；
And these amendment or replace, do not make appropriate technical solution essence depart from various embodiments of the present invention technical scheme spirit and
Scope.
Claims (10)
1. a marking method based on ion beam etching, it is characterised in that described marking method comprises the steps:
S1: coat a layer photoetching glue-line at substrate surface；
S2: by patterned mask plate, utilizes ultraviolet light to be exposed photoresist layer；
S3: remove patterned mask plate, obtains patterned photoresist layer；
S4: by patterned photoresist layer, the place to be marked of substrate is performed etching by the ion beam using ion source to launch；
S5: peel off patterned photoresist layer, obtains patterned substrate, it is achieved the labelling to substrate.
Marking method based on ion beam etching the most according to claim 1, it is characterised in that use in described step S4
The place to be marked of substrate is persistently performed etching by the ion beam that ion source is launched, and the energy of ion beam is 400eV～600eV,
Ion beam current density is 0.4mA/cm2～0.6mA/cm2；Etch period is 5～10 minutes.
Marking method based on ion beam etching the most according to claim 1, it is characterised in that described step S4 includes:
Etch step, uses high energy ion beam to perform etching the place to be marked of substrate, the ion beam of this high energy ion beam
Energy is 500eV～600eV, and ion beam current density is 0.55mA/cm2～0.6mA/cm2, etch period is 4～6 minutes；
Secondarily etched step, uses low energy ion beam to perform etching the place to be marked of substrate, the ion of described low energy ion beam
Beam energy is 400eV～460eV, and ion beam current density is 0.42mA/cm2～0.45mA/cm2, etch period is 8～10 minutes.
Marking method based on ion beam etching the most according to claim 3, it is characterised in that a described etch step
With secondarily etched step is spaced 1～2 minute.
5. according to the marking method based on ion beam etching according to any one of Claims 1 to 4, it is characterised in that described
Placing the substrate on mark platform in step S4, described mark platform and ionogenic accelerating grid distance are 20cm～30cm.
6. according to the marking method based on ion beam etching according to any one of Claims 1 to 4, it is characterised in that described
Step S4 intermediate ion bundle is helium ion beam, ne ion bundle, ar-ion beam, krypton ion beam or xenon ion bundle.
7. according to the marking method based on ion beam etching according to any one of Claims 1 to 4, it is characterised in that described
Substrate is quartz substrate.
8. according to the marking method based on ion beam etching according to any one of Claims 1 to 4, it is characterised in that described
On patterned substrate, the etching depth of labelling is 100nm～300nm.
9. according to the marking method based on ion beam etching according to any one of Claims 1 to 4, it is characterised in that described
On patterned substrate, the line thickness of labelling is 20nm～80nm.
10. according to the answering in mark field of the marking method based on ion beam etching according to any one of claim 1～9
With.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610797743.5A CN106226994A (en) | 2016-08-31 | 2016-08-31 | A kind of marking method based on ion beam etching and application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610797743.5A CN106226994A (en) | 2016-08-31 | 2016-08-31 | A kind of marking method based on ion beam etching and application |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106226994A true CN106226994A (en) | 2016-12-14 |
Family
ID=58074086
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610797743.5A Pending CN106226994A (en) | 2016-08-31 | 2016-08-31 | A kind of marking method based on ion beam etching and application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106226994A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109867260A (en) * | 2018-08-27 | 2019-06-11 | 浙江大学 | The method of electron beam/ion beam focusing etching and micro-imaging is carried out on nonconductive substrate |
| CN113178494A (en) * | 2021-03-08 | 2021-07-27 | 江苏大学 | Method for improving photoelectric conversion efficiency of gallium arsenide solar cell |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1175047A (en) * | 1996-08-26 | 1998-03-04 | 罗勇 | Anti-fake mark and trade mark made of nuclear pore filter membrane and its making process |
| CN1224885A (en) * | 1998-12-29 | 1999-08-04 | 中国原子能科学研究院 | Anti-counterfeiting mark and manufacturing method thereof |
| CN1535213A (en) * | 2001-02-16 | 2004-10-06 | ��ɣ��ҵ | Forming mark on gemstone or industrial diamond |
| CN101308777A (en) * | 2007-05-15 | 2008-11-19 | 佳能株式会社 | Nanostructure and manufacturing method of nanostructure |
| CN101827713A (en) * | 2007-07-27 | 2010-09-08 | 尤里康斯坦廷诺维奇·尼奇恩科 | Method for marking valuable articles |
| CN102197004A (en) * | 2008-10-28 | 2011-09-21 | 埃西勒国际通用光学公司 | Method and apparatus for marking coated ophthalmic substrates |
| CN102375331A (en) * | 2010-08-12 | 2012-03-14 | 富葵精密组件(深圳)有限公司 | Circuit board marking system and application method thereof |
-
2016
- 2016-08-31 CN CN201610797743.5A patent/CN106226994A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1175047A (en) * | 1996-08-26 | 1998-03-04 | 罗勇 | Anti-fake mark and trade mark made of nuclear pore filter membrane and its making process |
| CN1224885A (en) * | 1998-12-29 | 1999-08-04 | 中国原子能科学研究院 | Anti-counterfeiting mark and manufacturing method thereof |
| CN1535213A (en) * | 2001-02-16 | 2004-10-06 | ��ɣ��ҵ | Forming mark on gemstone or industrial diamond |
| CN101308777A (en) * | 2007-05-15 | 2008-11-19 | 佳能株式会社 | Nanostructure and manufacturing method of nanostructure |
| CN101827713A (en) * | 2007-07-27 | 2010-09-08 | 尤里康斯坦廷诺维奇·尼奇恩科 | Method for marking valuable articles |
| CN102197004A (en) * | 2008-10-28 | 2011-09-21 | 埃西勒国际通用光学公司 | Method and apparatus for marking coated ophthalmic substrates |
| CN102375331A (en) * | 2010-08-12 | 2012-03-14 | 富葵精密组件(深圳)有限公司 | Circuit board marking system and application method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109867260A (en) * | 2018-08-27 | 2019-06-11 | 浙江大学 | The method of electron beam/ion beam focusing etching and micro-imaging is carried out on nonconductive substrate |
| CN109867260B (en) * | 2018-08-27 | 2021-02-02 | 浙江大学 | Method for carrying out electron beam or ion beam focusing etching and microscopic imaging on non-conductive substrate |
| CN113178494A (en) * | 2021-03-08 | 2021-07-27 | 江苏大学 | Method for improving photoelectric conversion efficiency of gallium arsenide solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Booth | Recent applications of pulsed lasers in advanced materials processing | |
| US7675001B2 (en) | Method and a device for depositing a wipe-proof and rub-proof marking onto transparent glass | |
| TW388190B (en) | Method and apparatus for forming a through hole in a ceramic green sheet | |
| CN104125934A (en) | Method and apparatus for separation of strengthened glass and articles produced thereby | |
| CN106030617B (en) | Modified two-dimensional codes and laser systems and methods for generating such codes | |
| Ostholt et al. | High speed through glass via manufacturing technology for interposer | |
| CN106226994A (en) | A kind of marking method based on ion beam etching and application | |
| CN1981291A (en) | Laser-based method and system for processing targeted surface material and article produced thereby | |
| TW202216630A (en) | Glass substrate having mark and production method therefor | |
| CN110526203A (en) | Method based on the quasi- three-dimensional micro-nano structure of AFM write-through stress-electric coupling lithography | |
| CN114349356A (en) | Method for processing glass by alkaline etching | |
| JPH0471792A (en) | Marking method | |
| RU99127463A (en) | LABELING DIAMOND | |
| CN111362570B (en) | Method for laser processing glass sheet and method and system for laser processing glass sheet chamfer | |
| EP2808118B1 (en) | Method of marking material and material marked according to same method | |
| CN113998898B (en) | Glass component | |
| TWI398317B (en) | Method of forming a pattern on a work piece, method of shaping a beam of electromagnetic radiation for use in said method, and aperture for shaping a beam of electromagnetic radiation | |
| Abbott et al. | New techniques for laser micromachining MEMS devices | |
| CN107272344B (en) | Exposure method, exposure sources and three-dimensional structure | |
| CN110453221B (en) | Plate processing apparatus and plate processing method | |
| CN110921613B (en) | Laser mask etching method and system for controlling plasma by electromagnetic field | |
| CN104409329A (en) | Method for forming transparent base material with groove and method for forming element substrate | |
| JP2008150691A (en) | Mask and its manufacturing method | |
| KR100995407B1 (en) | Nano-patterning method using focused ion beam | |
| CN205827054U (en) | A kind of novel high-power high speed maskless lithography system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161214 |