CN106209044B - MOSFET electronic switch driving circuit - Google Patents

MOSFET electronic switch driving circuit Download PDF

Info

Publication number
CN106209044B
CN106209044B CN201610763883.0A CN201610763883A CN106209044B CN 106209044 B CN106209044 B CN 106209044B CN 201610763883 A CN201610763883 A CN 201610763883A CN 106209044 B CN106209044 B CN 106209044B
Authority
CN
China
Prior art keywords
unit
gate
driving
power
edge detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610763883.0A
Other languages
Chinese (zh)
Other versions
CN106209044A (en
Inventor
陈鹏
黄学军
于辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou 3ctest Electronic Technology Co ltd
Original Assignee
Suzhou 3ctest Electronic Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou 3ctest Electronic Technology Co ltd filed Critical Suzhou 3ctest Electronic Technology Co ltd
Priority to CN201610763883.0A priority Critical patent/CN106209044B/en
Publication of CN106209044A publication Critical patent/CN106209044A/en
Application granted granted Critical
Publication of CN106209044B publication Critical patent/CN106209044B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electronic Switches (AREA)

Abstract

The invention discloses a MOSFET electronic switch driving circuit, comprising: the device comprises a square wave generator, a low-level edge detection unit, a high-level edge detection unit, a positive pulse level conversion unit, a negative pulse level conversion unit, a positive pulse drive branch and a negative pulse drive branch; a square wave generator for generating a trigger square wave signal is connected to respective input ends of the low-level edge detection unit and the high-level edge detection unit; the positive pulse driving branch circuit and the negative pulse driving branch circuit are respectively composed of a driving small signal unit, a power tube unit and a main circuit energy taking unit which are sequentially connected in series, a primary side and a secondary side of the coupling transformer are respectively provided with a primary coil and at least 2 secondary coils, and a voltage stabilizing diode is connected with a first diode and a filtering module which are connected in series in parallel. The invention can realize any width of the driving pulse without an additional power supply, thereby greatly reducing the volume of the electronic switch driving circuit, accelerating the rising front edge of the electronic switch and greatly reducing the power required by the electronic switch driving circuit.

Description

MOSFET electronic switch driving circuit
Technical Field
The invention belongs to the technical field of power electronic device application, and particularly relates to a MOSFET electronic switch driving circuit.
Background
The miniaturized MOSFET electronic switch with any pulse width mostly adopts an active transformer coupling mode. This drive circuit principle, while capable of achieving arbitrary pulse widths, is not suitable for array MOSFET electronic switches. This is because such a driving circuit requires a large number of isolation power supplies, and it is difficult to realize a small-sized design. How to overcome the above technical problems has been the direction of efforts of those skilled in the art.
Disclosure of Invention
The invention aims to provide the MOSFET electronic switch driving circuit which can realize any width of driving pulse, does not need a large amount of isolated power supplies, and has small volume and extremely low power of the driving power supplies.
In order to achieve the purpose, the invention adopts the technical scheme that: a MOSFET electronic switch driver circuit, comprising: the device comprises a square wave generator, a low-level edge detection unit, a high-level edge detection unit, a positive pulse level conversion unit, a negative pulse level conversion unit, a positive pulse drive branch and a negative pulse drive branch; a square wave generator for generating trigger square wave signals is connected to respective input ends of a low-level edge detection unit and a high-level edge detection unit, the low-level edge detection unit is sequentially connected with a negative pulse level conversion unit and a negative pulse driving branch, and the high-level edge detection unit is sequentially connected with a positive pulse level conversion unit and a positive pulse driving branch;
the high-level edge detection unit further comprises a first AND gate, a high-level differential module, a first NOT gate and a second NOT gate which are sequentially connected in series, one input end of the first AND gate is connected with the square wave generator, a first capacitor is arranged between the other input end of the first AND gate and the ground, and the second NOT gate is connected with the positive pulse level conversion unit;
the low-level edge detection unit further comprises a second AND gate, a low-level differential module, a third NOT gate and a fourth NOT gate which are sequentially connected in series, a fifth NOT gate is arranged between one input end of the second AND gate and the square wave generator, a second capacitor is arranged between the other input end of the second AND gate and the ground, and the fourth NOT gate is connected with the negative pulse level conversion unit;
the positive pulse driving branch and the negative pulse driving branch are composed of a driving small signal unit, a power tube unit and a main circuit energy taking unit which are sequentially connected in series, the primary side and the secondary side of the coupling transformer are respectively provided with a primary coil and at least 2 secondary coils, and the at least 2 secondary coils are further divided into at least 1V Tp Secondary coil and at least 1V Tn A secondary coil;
the accelerating network unit is connected with the primary coil of the coupling transformer in series, and the V of the coupling transformer Tp Secondary coil and V Tn The secondary coils are connected to the small drive signal units of the corresponding drive branches, and the accelerating network unit is composed of R connected in parallel v Resistance and C v The capacitors are connected in parallel;
the driving small signal unit further comprises a filtering module, an MOS (metal oxide semiconductor) tube and a first diode positioned between the filtering module and the MOS tube, the filtering module is connected with the VTn secondary coil, the grid electrode and the source electrode of the MOS tube are respectively connected with the high potential output end and the low potential output end of the VTp secondary coil, and a voltage stabilizing diode is connected with the first diode and the filtering module which are connected in series in parallel;
the main circuit energy taking unit further comprises a storage capacitor, a second diode and 2 series-connected current limiting resistors, the storage capacitor is connected with a drain electrode of an MOS (metal oxide semiconductor) tube of the small signal driving unit, the second diode is positioned between a joint of the 2 series-connected current limiting resistors and a joint of the MOS tube and the storage capacitor, a source electrode of the MOS tube of the small signal driving unit is connected to a grid electrode of a power tube in the power tube unit, and the drain electrode and the source electrode of the power tube unit are respectively used as a positive electrode and a negative electrode of the main circuit.
The further improvement scheme in the technical scheme is as follows:
1. in the above scheme, the power tube in the power tube unit is formed by connecting a first power MOS tube and a second power MOS tube in parallel.
2. In the above scheme, the positive pulse level conversion unit and the negative pulse level conversion unit are both composed of a push-pull circuit, a high-voltage MOS tube, an acceleration network unit and a coupling transformer.
3. In the above scheme, the push-pull circuit includes a first power MOS transistor, a second power MOS transistor and a third power MOS transistor, the second power MOS transistor is connected in parallel with the third power MOS transistor, and the first power MOS transistor is connected in series with the second power MOS transistor and the third power MOS transistor.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages:
the MOSFET electronic switch driving circuit can realize any width of driving pulse, does not need a large number of isolated power supplies, and has small volume and extremely low power of the driving power supply; the power supply is greatly reduced, and the power supply power is very small, and the core of the design of the driving circuit is as follows: firstly, detecting the leading edge and the trailing edge of a trigger signal to provide a basis for pulse width control; secondly, the main circuit is used for storing energy for a capacitor of the driving circuit, so that an isolation power supply can be omitted; and the power is injected by front and back double pulses from the coupling transformer and the main circuit energy taking unit without an additional power supply, so that the volume of the electronic switch driving circuit is greatly reduced, the rising front edge of an electronic switch is accelerated, the power required by the electronic switch driving circuit is greatly reduced, and the power injection circuit is particularly suitable for an array MOSFET electronic switch.
Drawings
FIG. 1 is a schematic diagram of a partial structure of a MOSFET electronic switch driving circuit of the present invention;
FIG. 2 is a graph of voltage waveforms at various points in the present invention;
FIG. 3 is a schematic diagram of a positive pulse level shift circuit according to the present invention;
FIG. 4 is a schematic diagram of a negative pulse level shift circuit according to the present invention;
fig. 5 is a schematic structural diagram of a power energy system and a power device according to the present invention.
In the above drawings: 1. a square wave generator; 2. a low level edge detection unit; 3. a high level edge detection unit; 4. a positive pulse level conversion unit; 5. a negative pulse level conversion unit; 6. a positive pulse driving branch; 7. the negative pulse drives the branch circuit; 81. a first AND gate; 82. a high level differentiation module; 83. a first not gate; 84. a second not gate; 85. a first capacitor; 91. a second AND gate; 92. a low level differential module; 93. a third not gate; 94. a fourth not gate; 95. a fifth not gate; 96. a second capacitor; 10. a push-pull circuit; 101. a first power MOS tube; 102. a push-pull circuit; 103. a push-pull circuit; 11. a high-voltage MOS tube; 12. an acceleration network element; 13. a coupling transformer; 14. driving the small signal unit; 141. a filtering module; 142. an MOS tube; 143. a first diode; 15. a power tube unit; 16. a main circuit energy taking unit; 161. a storage capacitor; 162. a second diode; 163. a current limiting resistor; 17. and a voltage regulator diode.
Detailed Description
The invention is further described with reference to the following figures and examples:
example 1: a MOSFET electronic switch driver circuit, comprising: the device comprises a square wave generator 1, a low-level edge detection unit 2, a high-level edge detection unit 3, a positive pulse level conversion unit 4, a negative pulse level conversion unit 5, a positive pulse driving branch 6 and a negative pulse driving branch 7; a square wave generator 1 for generating a trigger square wave signal is connected to respective input ends of a low level edge detection unit 2 and a high level edge detection unit 3, the low level edge detection unit 2 is sequentially connected with a negative pulse level conversion unit 5 and a negative pulse driving branch 7, and the high level edge detection unit 3 is sequentially connected with a positive pulse level conversion unit 4 and a positive pulse driving branch 6;
the high-level edge detection unit 3 further comprises a first and gate 81, a high-level differential module 82, a first not gate 83 and a second not gate 84 which are sequentially connected in series, one input end of the first and gate 81 is connected with the square wave generator 1, a first capacitor 85 is arranged between the other input end of the first and gate and the ground, and the second not gate 84 is connected with the positive pulse level conversion unit 4;
the low-level edge detection unit 2 further comprises a second and gate 91, a low-level differential module 92, a third not gate 93 and a fourth not gate 94 which are sequentially connected in series, a fifth not gate 95 is arranged between one input end of the second and gate 91 and the square-wave generator 1, a second capacitor 96 is arranged between the other input end of the second and gate and the ground, and the fourth not gate 94 is connected with the negative pulse level conversion unit 5;
the positive pulse driving branch 6 and the negative pulse driving branch 7 are respectively composed of a driving small signal unit 14, a power tube unit 15 and a main circuit energy taking unit 16 which are sequentially connected in series, the primary side and the secondary side of the coupling transformer 13 are respectively provided with a primary coil and at least 2 secondary coils, and the at least 2 secondary coils are further divided into at least 1V Tp Secondary coil and at least 1V Tn A secondary coil;
the accelerating network unit 12 is connected in series with the primary winding of the coupling transformer 13, the V of the coupling transformer 13 Tp Secondary coil and V Tn The secondary coils are all connected to the small signal driving units 14 of the corresponding driving branches, and the accelerating network units are composed of R connected in parallel v Resistance and C v The capacitors are connected in parallel;
the driving small signal unit 14 further includes a filtering module 141, an MOS transistor 142 and a first diode 143 disposed between the filtering module 141 and the MOS transistor 142, the filtering module 141 is connected to the secondary winding of VTn, the gate and the source of the MOS transistor 142 are respectively connected to the high potential output terminal and the low potential output terminal of the secondary winding of VTp, and a zener diode 17 is connected in parallel to the first diode 143 and the filtering module 141 connected in series;
the main circuit energy-taking unit 16 further includes a storage capacitor 161, a second diode 162 and 2 series-connected current-limiting resistors 163, the storage capacitor 161 is connected to the drain of the MOS transistor 142 of the driving small signal unit 14, the second diode 162 is located between the junction of the 2 series-connected current-limiting resistors 163 and the junction of the MOS transistor 142 and the storage capacitor, the source of the MOS transistor of the driving small signal unit 14 is connected to the gate of the power transistor in the power transistor unit 15, and the drain and the source of the power transistor unit 15 are respectively used as the positive pole and the negative pole of the main circuit.
The positive pulse level conversion unit 4 and the negative pulse level conversion unit 5 are both composed of a push-pull circuit 10, a high-voltage MOS tube 11, an acceleration network unit 12 and a coupling transformer 13.
The push-pull circuit 10 includes a first power MOS 101, a second power MOS 102 and a third power MOS 103, the second power MOS 102 is connected in parallel with the third power MOS 103, and the first power MOS 101 is connected in series with the second power MOS 102 and the third power MOS 103.
turn-on and turn-off represent the power tube turn-on and turn-off signals, respectively. The high level duration of the two signals respectively reflects the high level time and the low level time of the original driving signal TR. Turn-on and turn-off pulses are used to trigger Tp, respectively 11 、Tp 12 、Tp 21 、Tp 22 And Tn 11 、Tn 12 As shown in fig. 1 and 3.
Active transformers can also achieve arbitrary pulse widths, but this solution is not suitable for MOSFET array switches. The reason is that such circuits require a large number of isolated power supplies, limiting the miniaturization of electronic switches.
This embodiment is particularly advantageous in applications where the array of electronic switches (many power devices in series) is used. The pulse width driving circuit can provide any pulse width driving power for the grid electrode of the electronic switch, and does not need an isolation power supply. The driving energy of such electronic switches originates from the capacitor stored energy of the main circuit to the capacitors Ck1 and Ck 2.
Example 2: a MOSFET electronic switch driver circuit, comprising: the device comprises a square wave generator 1, a low-level edge detection unit 2, a high-level edge detection unit 3, a positive pulse level conversion unit 4, a negative pulse level conversion unit 5, a positive pulse driving branch 6 and a negative pulse driving branch 7; a square wave generator 1 for generating a trigger square wave signal is connected to respective input ends of a low level edge detection unit 2 and a high level edge detection unit 3, the low level edge detection unit 2 is sequentially connected with a negative pulse level conversion unit 5 and a negative pulse driving branch 7, and the high level edge detection unit 3 is sequentially connected with a positive pulse level conversion unit 4 and a positive pulse driving branch 6;
the high-level edge detection unit 3 further comprises a first and gate 81, a high-level differential module 82, a first not gate 83 and a second not gate 84 which are sequentially connected in series, one input end of the first and gate 81 is connected with the square wave generator 1, a first capacitor 85 is arranged between the other input end of the first and gate and the ground, and the second not gate 84 is connected with the positive pulse level conversion unit 4;
the low-level edge detection unit 2 further comprises a second and gate 91, a low-level differential module 92, a third not gate 93 and a fourth not gate 94 which are sequentially connected in series, a fifth not gate 95 is arranged between one input end of the second and gate 91 and the square-wave generator 1, a second capacitor 96 is arranged between the other input end of the second and gate and the ground, and the fourth not gate 94 is connected with the negative pulse level conversion unit 5;
the positive pulse driving branch 6 and the negative pulse driving branch 7 are respectively composed of a driving small signal unit 14, a power tube unit 15 and a main circuit energy taking unit 16 which are sequentially connected in series, the primary side and the secondary side of the coupling transformer 13 are respectively provided with a primary coil and at least 2 secondary coils, and the at least 2 secondary coils are further divided into at least 1V Tp Secondary coil and at least 1V Tn A secondary coil;
the accelerating network unit 12 is connected in series with the primary coil of the coupling transformer 13, coupledV of transformer 13 Tp Secondary coil and V Tn The secondary coils are connected to the small drive signal units 14 of the corresponding drive branches, and the accelerating network units are composed of R connected in parallel v Resistance and C v The capacitors are connected in parallel;
the driving small signal unit 14 further includes a filtering module 141, an MOS transistor 142 and a first diode 143 disposed between the filtering module 141 and the MOS transistor 142, the filtering module 141 is connected to the secondary winding of VTn, the gate and the source of the MOS transistor 142 are respectively connected to the high potential output terminal and the low potential output terminal of the secondary winding of VTp, and a zener diode 17 is connected in parallel to the first diode 143 and the filtering module 141 connected in series;
the main circuit energy extracting unit 16 further includes a storage capacitor 161, a second diode 162, and 2 series-connected current limiting resistors 163, the storage capacitor 161 is connected to the drain of the MOS transistor 142 of the driving small signal unit 14, the second diode 162 is located between the junction of the 2 series-connected current limiting resistors 163 and the junction of the MOS transistor 142 and the storage capacitor, the source of the MOS transistor of the driving small signal unit 14 is connected to the gate of the power transistor in the power transistor unit 15, and the drain and the source of the power transistor unit 15 are respectively used as the positive electrode and the negative electrode of the main circuit.
The power transistor in the power transistor unit 15 is formed by connecting a first power MOS transistor and a second power MOS transistor in parallel.
The positive pulse level conversion unit 4 and the negative pulse level conversion unit 5 are both composed of a push-pull circuit 10, a high-voltage MOS tube 11, an accelerating network unit 12 and a coupling transformer 13.
turn-on and turn-off represent the power tube turn-on and turn-off signals, respectively. The high level duration of the two signals respectively reflects the high level time and the low level time of the original driving signal TR. Turn-on and turn-off pulses are used to trigger Tp, respectively 11 、Tp 12 、Tp 21 、Tp 22 And Tn 11 、Tn 12 As shown in fig. 1 and 3.
Active transformers can also achieve arbitrary pulse widths, but this solution is not suitable for MOSFET array switches. The reason is that such circuits require a large number of isolated power supplies, limiting the miniaturization of electronic switches.
This embodiment is particularly advantageous in applications where the array electronic switch (power devices are in large series). The pulse width driving circuit can provide any pulse width driving power for the grid electrode of the electronic switch, and does not need an isolation power supply. The driving energy of such electronic switches originates from the capacitor stored energy of the main circuit to the capacitors Ck1 and Ck 2.
When the MOSFET electronic switch driving circuit is adopted, the power supply of the MOSFET electronic switch driving circuit is greatly reduced, and the power supply power is very low. The core of this drive circuit design: firstly, detecting the leading edge and the trailing edge of a trigger signal to provide a basis for pulse width control; secondly, the main circuit is used for storing energy for a capacitor of the driving circuit, so that an isolation power supply can be omitted; and the power is injected by front and back double pulses from the coupling transformer and the main circuit energy taking unit without an additional power supply, so that the volume of the electronic switch driving circuit is greatly reduced, the rising front edge of an electronic switch is accelerated, the power required by the electronic switch driving circuit is greatly reduced, and the power injection circuit is particularly suitable for an array MOSFET electronic switch.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.

Claims (2)

1. A MOSFET electronic switch drive circuit, characterized by: the method comprises the following steps: the device comprises a square wave generator (1), a low-level edge detection unit (2), a high-level edge detection unit (3), a positive pulse level conversion unit (4), a negative pulse level conversion unit (5), a positive pulse drive branch (6) and a negative pulse drive branch (7); a square wave generator (1) for generating trigger square wave signals is connected to respective input ends of a low level edge detection unit (2) and a high level edge detection unit (3), the low level edge detection unit (2) is sequentially connected with a negative pulse level conversion unit (5) and a negative pulse driving branch circuit (7), and the high level edge detection unit (3) is sequentially connected with a positive pulse level conversion unit (4) and a positive pulse driving branch circuit (6);
the high-level edge detection unit (3) further comprises a first AND gate (81), a high-level differential module (82), a first NOT gate (83) and a second NOT gate (84) which are sequentially connected in series, one input end of the first AND gate (81) is connected with the square wave generator (1), a first capacitor (85) is arranged between the other input end of the first AND gate and the ground, and the second NOT gate (84) is connected with the positive pulse level conversion unit (4);
the low-level edge detection unit (2) further comprises a second AND gate (91), a low-level differential module (92), a third NOT gate (93) and a fourth NOT gate (94) which are sequentially connected in series, a fifth NOT gate (95) is arranged between one input end of the second AND gate (91) and the square wave generator (1), a second capacitor (96) is arranged between the other input end of the second AND gate and the ground, and the fourth NOT gate (94) is connected with the negative pulse level conversion unit (5);
the positive pulse driving branch (6) and the negative pulse driving branch (7) are respectively composed of a driving small signal unit (14), a power tube unit (15) and a main circuit energy taking unit (16) which are sequentially connected in series, the primary side and the secondary side of the coupling transformer (13) are respectively provided with a primary coil and at least 2 secondary coils, and the at least 2 secondary coils are further divided into at least 1V Tp Secondary coil and at least 1V Tn A secondary coil;
the accelerating network unit (12) is connected in series with the primary winding of the coupling transformer (13), the V of the coupling transformer (13) Tp Secondary coil and V Tn The secondary coils are connected to the small signal driving units (14) of the corresponding driving branches, and the accelerating network unit (12) is composed of R connected in parallel v Resistance and C v The capacitors are connected in parallel;
the small driving signal unit (14) further comprises a filtering module (141), an MOS (metal oxide semiconductor) tube (142) and a first diode (143) positioned between the filtering module (141) and the MOS tube (142), the filtering module (141) is connected with the secondary coil of the VTn, the grid electrode and the source electrode of the MOS tube (142) are respectively connected with the high potential output end and the low potential output end of the secondary coil of the VTp, and a voltage stabilizing diode (17) is connected with the first diode (143) and the filtering module (141) which are connected in series in parallel;
the main circuit energy taking unit (16) further comprises a storage capacitor (161), a second diode (162) and 2 series-connected current limiting resistors (163), wherein the storage capacitor (161) is connected with the drain electrode of the MOS (142) for driving the small signal unit (14), the second diode (162) is positioned between the connection point of the 2 series-connected current limiting resistors (163) and the connection point of the MOS (142) and the storage capacitor, the source electrode of the MOS for driving the small signal unit (14) is connected to the grid electrode of the power tube in the power tube unit (15), and the drain electrode and the source electrode of the power tube unit (15) are respectively used as the positive electrode and the negative electrode of the main circuit; the power tube in the power tube unit (15) is formed by connecting a first power MOS tube and a second power MOS tube in parallel;
the positive pulse level conversion unit (4) and the negative pulse level conversion unit (5) are composed of a push-pull circuit (10), a high-voltage MOS (metal oxide semiconductor) tube (11), an accelerating network unit (12) and a coupling transformer (13).
2. The MOSFET electronic switch driver circuit of claim 1, wherein: the push-pull circuit (10) comprises a first power MOS tube (101), a second power MOS tube (102) and a third power MOS tube (103), wherein the second power MOS tube (102) is connected with the third power MOS tube (103) in parallel, and the first power MOS tube (101) is connected with the second power MOS tube (102) and the third power MOS tube (103) in series.
CN201610763883.0A 2016-08-30 2016-08-30 MOSFET electronic switch driving circuit Active CN106209044B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610763883.0A CN106209044B (en) 2016-08-30 2016-08-30 MOSFET electronic switch driving circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610763883.0A CN106209044B (en) 2016-08-30 2016-08-30 MOSFET electronic switch driving circuit

Publications (2)

Publication Number Publication Date
CN106209044A CN106209044A (en) 2016-12-07
CN106209044B true CN106209044B (en) 2023-03-03

Family

ID=58089058

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610763883.0A Active CN106209044B (en) 2016-08-30 2016-08-30 MOSFET electronic switch driving circuit

Country Status (1)

Country Link
CN (1) CN106209044B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108696267B (en) * 2017-04-12 2021-11-30 赤多尼科两合股份有限公司 Driving device and driving method of field effect transistor and power supply device
WO2019075619A1 (en) * 2017-10-16 2019-04-25 科棣姆（上海）电源科技有限公司 Drive circuit for maintaining voltage balance of mos transistors in intermediate frequency plasma power supply
CN108540117A (en) * 2018-03-14 2018-09-14 湖北楚航电子科技有限公司 A kind of high power PIN RF switch driving circuits
CN112713760B (en) * 2020-12-01 2022-03-04 北京无线电测量研究所 Parallel redundant ferrite switch driver

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3350572A (en) * 1964-04-06 1967-10-31 Gen Electric High frequency chopper circuit
CN102315757B (en) * 2010-07-07 2014-07-09 台达能源技术（上海）有限公司 Driver for driving power switching element
CN206135864U (en) * 2016-08-30 2017-04-26 苏州泰思特电子科技有限公司 MOSFET electronic switch driving circuit

Also Published As

Publication number Publication date
CN106209044A (en) 2016-12-07

Similar Documents

Publication Publication Date Title
CN106209044B (en) MOSFET electronic switch driving circuit
CN109495099B (en) Arbitrary pulse width type low power electronic switch
CN102769453B (en) High-voltage side gate drive circuit capable of resisting noise interference
CN103825468A (en) Control circuit of flyback power converter
CN103715898B (en) Feedback voltage sample circuit, feedback voltage blanking circuit and method
CN104079169A (en) Circuit of switching inductance power supply
US20200036379A1 (en) Gate circuit and gate drive circuit for power semiconductor switch
EP4357191A1 (en) Wake-up circuit and electronic device comprising same
US9606567B2 (en) Method and apparatus for providing electrical isolation
CN103825434B (en) A kind of IGBT drive circuit
CN216959655U (en) Gate drive circuit for pulse generator
CN206135864U (en) MOSFET electronic switch driving circuit
CN114465457A (en) Gate drive circuit for pulse generator
CN206023569U (en) Supper-fast MOSFET electronic switches drive circuit
WO2001033708A1 (en) Forward converter circuit having reduced switching losses
CN106130320B (en) Supper-fast MOSFET electronic switch driving circuit
CN108429435A (en) A kind of MOSFET isolated drive circuits
CN109150139B (en) Narrow pulse width pulse output circuit
CN204046559U (en) High-power IGBT driver
CN114400989A (en) Pulse generating circuit, pulse generating apparatus, and control method thereof
CN102916570A (en) Isolated driving circuit
CN106209047B (en) Electronic switch driver capable of realizing quick on-off
CN102577124A (en) High voltage switch configuration
CN206023568U (en) Any pulsewidth MOSFET electronic switch drive circuit
CN106018894B (en) EMC test attenuation oscillasion impulse voltage generator

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant