CN106208979A - 多级放大器 - Google Patents
多级放大器 Download PDFInfo
- Publication number
- CN106208979A CN106208979A CN201610366160.7A CN201610366160A CN106208979A CN 106208979 A CN106208979 A CN 106208979A CN 201610366160 A CN201610366160 A CN 201610366160A CN 106208979 A CN106208979 A CN 106208979A
- Authority
- CN
- China
- Prior art keywords
- circuit
- temperature
- biasing
- amplifier
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008859 change Effects 0.000 claims abstract description 33
- 230000000630 rising effect Effects 0.000 claims abstract description 10
- 230000005611 electricity Effects 0.000 claims description 20
- 230000007423 decrease Effects 0.000 claims description 16
- 230000001629 suppression Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 9
- 230000003321 amplification Effects 0.000 description 32
- 238000003199 nucleic acid amplification method Methods 0.000 description 32
- 230000009471 action Effects 0.000 description 30
- 238000010586 diagram Methods 0.000 description 19
- 210000000689 upper leg Anatomy 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000872 buffer Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 102220052459 rs200562715 Human genes 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000000411 inducer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/408—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising three power stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/468—Indexing scheme relating to amplifiers the temperature being sensed
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/555—A voltage generating circuit being realised for biasing different circuit elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-109040 | 2015-05-28 | ||
JP2015109040A JP6387902B2 (ja) | 2015-05-28 | 2015-05-28 | 多段増幅器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106208979A true CN106208979A (zh) | 2016-12-07 |
CN106208979B CN106208979B (zh) | 2019-03-08 |
Family
ID=57282082
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610366160.7A Expired - Fee Related CN106208979B (zh) | 2015-05-28 | 2016-05-27 | 多级放大器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9871493B2 (zh) |
JP (1) | JP6387902B2 (zh) |
CN (1) | CN106208979B (zh) |
DE (1) | DE102016209018A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017169769A1 (ja) * | 2016-03-31 | 2017-10-05 | 日本電信電話株式会社 | ドライバ回路および光送信器 |
JP2019161323A (ja) * | 2018-03-08 | 2019-09-19 | 日本電信電話株式会社 | 増幅回路 |
US11159136B2 (en) * | 2019-12-30 | 2021-10-26 | Industrial Technology Research Institute | Variable gain amplifier and method thereof |
CN114172476B (zh) * | 2022-02-09 | 2022-05-13 | 成都嘉纳海威科技有限责任公司 | 一种宽带负反馈放大器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000027026A2 (en) * | 1998-11-04 | 2000-05-11 | Koninklijke Philips Electronics N.V. | Combined cmos mixer and circuit |
CN101944883A (zh) * | 2010-08-24 | 2011-01-12 | 上海集成电路研发中心有限公司 | 低噪声放大器 |
US8264279B2 (en) * | 2010-01-25 | 2012-09-11 | Sumitomo Electric Industries, Ltd. | Electronic circuit |
US20140091863A1 (en) * | 2012-09-28 | 2014-04-03 | Sumitomo Electric Industries, Ltd. | Current reuse amplifier |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4423388A (en) * | 1981-10-29 | 1983-12-27 | Watkins-Johnson Company | RF Amplifier circuit employing FET devices |
FR2558997B1 (fr) * | 1984-01-31 | 1989-02-03 | Thomson Csf | Amplificateur correcteur du temps de propagation de groupe de signaux electriques et chaine d'amplification a frequence intermediaire de faisceaux hertziens comportant un tel amplificateur |
JPH03123210A (ja) * | 1989-10-06 | 1991-05-27 | Alps Electric Co Ltd | 2段縦続差動増幅器 |
EP0549045B1 (fr) * | 1991-12-23 | 1996-11-27 | Laboratoires D'electronique Philips S.A.S. | Dispositif semiconducteur comprenant un amplificateur différentiel à deux étages |
US6020848A (en) * | 1998-01-27 | 2000-02-01 | The Boeing Company | Monolithic microwave integrated circuits for use in low-cost dual polarization phased-array antennas |
JP2003243938A (ja) | 2002-02-15 | 2003-08-29 | Mitsubishi Electric Corp | 半導体装置 |
JP2003332864A (ja) | 2002-05-17 | 2003-11-21 | Mitsubishi Electric Corp | 多段増幅回路 |
JP5479284B2 (ja) * | 2010-09-24 | 2014-04-23 | 住友電気工業株式会社 | 電子回路 |
JP5820176B2 (ja) * | 2011-07-21 | 2015-11-24 | 住友電気工業株式会社 | 電子回路 |
JP2015109040A (ja) | 2013-12-05 | 2015-06-11 | 富士通テレコムネットワークス株式会社 | 緊急通報装置および緊急通報システム |
-
2015
- 2015-05-28 JP JP2015109040A patent/JP6387902B2/ja active Active
-
2016
- 2016-02-19 US US15/048,340 patent/US9871493B2/en active Active
- 2016-05-24 DE DE102016209018.6A patent/DE102016209018A1/de active Pending
- 2016-05-27 CN CN201610366160.7A patent/CN106208979B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000027026A2 (en) * | 1998-11-04 | 2000-05-11 | Koninklijke Philips Electronics N.V. | Combined cmos mixer and circuit |
US8264279B2 (en) * | 2010-01-25 | 2012-09-11 | Sumitomo Electric Industries, Ltd. | Electronic circuit |
CN101944883A (zh) * | 2010-08-24 | 2011-01-12 | 上海集成电路研发中心有限公司 | 低噪声放大器 |
US20140091863A1 (en) * | 2012-09-28 | 2014-04-03 | Sumitomo Electric Industries, Ltd. | Current reuse amplifier |
Also Published As
Publication number | Publication date |
---|---|
DE102016209018A1 (de) | 2016-12-01 |
US20160352288A1 (en) | 2016-12-01 |
JP6387902B2 (ja) | 2018-09-12 |
US9871493B2 (en) | 2018-01-16 |
CN106208979B (zh) | 2019-03-08 |
JP2016225756A (ja) | 2016-12-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200630 Address after: Ai Erlandubailin Patentee after: Argona Technology Co.,Ltd. Address before: Tokyo, Japan Patentee before: Mitsubishi Electric Corp. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200903 Address after: Suite 23, Hyde building, carikming Park, Dublin, Ireland Patentee after: Sunley storage Co.,Ltd. Address before: Ai Erlandubailin Patentee before: Argona Technology Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190308 |
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CF01 | Termination of patent right due to non-payment of annual fee |