CN106206678A - A kind of gallium nitride Schottky diode and preparation method thereof - Google Patents
A kind of gallium nitride Schottky diode and preparation method thereof Download PDFInfo
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- CN106206678A CN106206678A CN201610764057.8A CN201610764057A CN106206678A CN 106206678 A CN106206678 A CN 106206678A CN 201610764057 A CN201610764057 A CN 201610764057A CN 106206678 A CN106206678 A CN 106206678A
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 131
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 130
- 238000002360 preparation method Methods 0.000 title claims description 18
- 238000002161 passivation Methods 0.000 claims abstract description 57
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000004888 barrier function Effects 0.000 claims abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- -1 silicon oxide compound Chemical class 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 10
- 239000013067 intermediate product Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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Abstract
The invention discloses a kind of gallium nitride Schottky diode, including the substrate layer set gradually from top to bottom, n type gallium nitride layer, the first passivation layer and the second passivation layer, it is provided with the first vacancy section on described first passivation layer, n type gallium nitride layer in described first vacancy section is provided with groove, p-type gallium nitride layer, barrier layer and metal level it is disposed with from top to bottom on n type gallium nitride layer in described first vacancy section, described p-type gallium nitride layer is arranged in groove, and described second passivation layer is provided with the second vacancy section.The present invention efficiently solves the defect that when using under existing gallium nitride Schottky diode room temperature state, reverse leakage current is big, it is ensured that backward voltage, beneficially popularization and application.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, it relates to a kind of gallium nitride Schottky diode and preparation side thereof
Method.
Background technology
Gallium nitride (GaN) material has high breakdown electric field, the advantage such as low forward voltage drop and high heat conductance, is to develop micro-electricity
Sub-device, the novel semiconductor material of opto-electronic device, the first generation germanium that is described as continuing, silicon semiconductor material, second filial generation GaAs,
Third generation semi-conducting material after indium phosphide compound semiconductor materials.Micro-at photoelectron, high temperature high power device and high frequency
Wave device application aspect has wide prospect.Schottky diode is metal-half utilizing metal to be formed with semiconductor contact
Conductor knot principle make because having the advantage such as low forward voltage drop and instantaneous recovery time, be widely used in Switching Power Supply,
The circuit such as converter, driver, can make again high frequency, low pressure, big electric current commutation diode, fly-wheel diode, protection diode make
With, in the circuit such as microwave communication, such as make commutation diode, the use of small-signal detector diode.
Conventional schottky (Schottky diode) is by allowing metal contact formation Schottky with semiconductor layer
A kind of semiconductor diode that potential barrier is formed, at normal temperatures, the reverse leakage that traditional gallium nitride Schottky diode has
The reverse leakage current that flow ratio PN junction diode has is big, causes backward voltage to reduce, is unfavorable for its popularization and application.
Summary of the invention
In order to overcome the deficiencies in the prior art, it is an object of the invention to provide a kind of gallium nitride Schottky diode, have
Effect solves the defect that when using under existing gallium nitride Schottky diode room temperature state, reverse leakage current is big, it is ensured that reversely electricity
Pressure, beneficially popularization and application.
For solving the problems referred to above, the technical solution adopted in the present invention is as follows:
A kind of gallium nitride Schottky diode, including the substrate layer set gradually from top to bottom, n type gallium nitride layer, first
Passivation layer and the second passivation layer, described first passivation layer is provided with the first vacancy section, the N-type nitridation in described first vacancy section
Gallium layer is provided with groove, the n type gallium nitride layer in described first vacancy section is disposed with from top to bottom p-type gallium nitride layer,
Barrier layer and metal level, described p-type gallium nitride layer is arranged in groove, and described second passivation layer is provided with the second vacancy section.
Preferably, the metal level in described second vacancy section being provided with anode layer, described substrate layer is away from n type gallium nitride
The side of layer is provided with cathode layer.
Preferably, described groove is equidistantly to arrange multiple endless grooves, the spacing between adjacent two endless grooves be 0.5 μm～
1μm。
Preferably, the longitudinal section of described groove is inverted trapezoidal, and described depth of groove is 0.5 μm～1 μm.
Preferably, described n type gallium nitride layer is N-type heavy blended gallium nitride layer, and the element of doping is phosphorus, and described N-type is heavily doped
The carrier concentration of miscellaneous gallium nitride layer is 1 × 1018～1 × 1019cm-3, thickness is 2.5-3.5 μm.
Preferably, described first passivation layer and the second passivation layer are silicon oxide compound layer, the thickness of described second passivation layer
Degree is
Preferably, by titanium, aluminum, nickel, gold, any one or several form described barrier layer.
Preferably, doped with element magnesium in described p-type gallium nitride layer, the carrier concentration of described p-type gallium nitride layer is 1 ×
1014～1 × 1017cm-3, thickness is 0.5 μm～1 μm.
The invention still further relates to the preparation method of a kind of gallium nitride Schottky diode, comprise the following steps:
S101. on substrate layer, sequentially form n type gallium nitride layer and the first passivation layer；
S102. on the first passivation layer, etching forms the first vacancy section；
S103. groove is formed on the n type gallium nitride layer in the first vacancy section；
P-type gallium nitride layer is grown the most in a groove by chemical vapour deposition technique；
S105. on p-type gallium nitride layer surface, deposit barrier layer；
S106. on barrier layer, deposit metal level；
Grow the second passivation layer the most on the metal layer, and etching forms the second vacancy section on the second passivation layer, to obtain final product
Described gallium nitride Schottky diode.
Further, deposition anode layer on S108. metal level in the second vacancy section is also included, at substrate layer away from N
The side deposited cathode layer of type gallium nitride layer.
Compared to existing technology, the beneficial effects of the present invention is: in the present invention, n type gallium nitride layer is provided with groove, and
Growing P-type gallium nitride layer in groove, when gallium nitride Schottky diode applies backward voltage in the present invention, p-type nitrogenizes
Gallium layer and n type gallium nitride layer form some PN junctions, and some PN junctions are connected with each other, and have blocked the transmission channel of electronics, thus have reduced
Leakage current, improves backward voltage.
Accompanying drawing explanation
Fig. 1 is the sectional view of gallium nitride Schottky diode in the present invention；
Fig. 2 is the preparation flow figure of gallium nitride Schottky diode in the present invention；
Fig. 3 is the sectional view of the intermediate products that step S101 is formed in preparation method of the present invention；
Fig. 4 is the sectional view of the intermediate products that step S102 is formed in preparation method of the present invention；
Fig. 5 is the structural representation of the intermediate products that step S103 is formed in preparation method of the present invention；
Fig. 6 is the sectional view of the intermediate products that step S103 is formed in preparation method of the present invention；
Fig. 7 is the sectional view of the intermediate products that step S104 is formed in preparation method of the present invention；
Fig. 8 is the sectional view of the intermediate products that step S105 is formed in preparation method of the present invention；
Fig. 9 is the sectional view of the intermediate products that step S106 is formed in preparation method of the present invention；
Figure 10 is the sectional view of the intermediate products that step S107 is formed in preparation method of the present invention；
Wherein, 1 for substrate layer, 2 for n type gallium nitride layer, 3 be the first passivation layer, 301 be the first vacancy section, 4 for groove, 5
For p-type gallium nitride layer, 6 for barrier layer, 7 for metal level, 8 be the second passivation layer, 801 be the second vacancy section, 901 for cathode layer,
902 is anode layer.
Detailed description of the invention
With detailed description of the invention, the present invention is described in further detail below in conjunction with the accompanying drawings.
As it is shown in figure 1, be gallium nitride Schottky diode in the present invention, including the substrate layer 1 set gradually from top to bottom,
N type gallium nitride layer the 2, first passivation layer 3 and the second passivation layer 8, the first passivation layer 3 is provided with the first vacancy section 301.
N type gallium nitride layer 2 in first vacancy section 301 is provided with groove 4, the n type gallium nitride layer in the first vacancy section 301
Being disposed with p-type gallium nitride layer 5, barrier layer 6 and metal level 7 on 2 from top to bottom, p-type gallium nitride layer 5 is arranged in groove 4.
Be provided with the second vacancy section 801 on second passivation layer 8, the second vacancy section 801 by exposed for metal level 7 outside.
When gallium nitride Schottky diode applies backward voltage in the present invention, p-type gallium nitride layer 5 and n type gallium nitride
Layer 2 forms some PN junctions, and some PN junctions are connected with each other, and have blocked the transmission channel of electronics, thus have reduced leakage current, have improve
Backward voltage.
In present embodiment, the metal level 7 in the second vacancy section 801 is provided with anode layer 902, as gallium nitride Xiao Te
The anode of based diode, substrate layer 1 is provided with cathode layer 901, as gallium nitride schottky away from the side of n type gallium nitride layer 2
The negative electrode of diode.Anode layer 902 and cathode layer 901 can use metal material.
Preferably, groove 4 is equidistantly to arrange multiple endless grooves, endless groove can be square, circular, trapezoidal, rhombus or
The circuluses such as triangle, the spacing between adjacent two endless grooves is 0.5 μm～1 μm.The longitudinal section of groove is inverted trapezoidal, groove
The degree of depth is 0.5 μm～1 μm.
Preferably, n type gallium nitride layer is N-type heavy blended gallium nitride layer, and the element of doping is phosphorus, N-type heavy blended gallium nitride
The carrier concentration of layer is 1 × 1018～1 × 1019cm-3, thickness is 2.5-3.5 μm.First passivation layer and the second passivation layer are
Silicon oxide compound layer, the thickness of the second passivation layer isBarrier layer by titanium, aluminum, nickel, gold any one or several
Plant composition.Doped with element magnesium in p-type GaN growth layer, the carrier concentration of p-type GaN growth layer is 1 × 1014～1 ×
1017cm-3, thickness is 0.5 μm～1 μm.
As shown in figs. 2-10, present invention additionally comprises the preparation method of a kind of gallium nitride Schottky diode, including following step
Rapid:
S101. on substrate layer 1, sequentially form n type gallium nitride layer 2 and the first passivation layer 3 (with reference to Fig. 3)；
S102. on the first passivation layer 3, etching forms the first vacancy section 301 (with reference to Fig. 4)；
S103. formed on the n type gallium nitride floor 2 in the first hollow out 301 district groove 4 (with reference to Fig. 5,6)；
S104. in groove 4, p-type gallium nitride layer 5 (with reference to Fig. 7) is grown by chemical vapour deposition technique；
S105. on p-type gallium nitride layer 5 surface, deposit barrier layer 6 (with reference to Fig. 8)；
S106. on barrier layer 6, deposit metal level 7 (with reference to Fig. 9)；
S107. on metal level 7, grow the second passivation layer 8, and etching forms the second vacancy section on the second passivation layer 8
801 (with reference to Figure 10), obtain described gallium nitride Schottky diode.
Further, deposition anode layer 902 on S108. metal level 7 in the second vacancy section 801 is also included, at substrate
Layer 1 is away from the side deposited cathode layer 901 of n type gallium nitride layer 2.
Embodiment 1
Preparation gallium nitride Schottky diode
S101. sequentially forming n type gallium nitride layer 2 and the first passivation layer 3, n type gallium nitride on substrate layer 1,2 is N-type weight
Doped gallium nitride layer, the element of doping is phosphorus, and the carrier concentration of N-type heavy blended gallium nitride layer is 1 × 1018～1 × 1019cm-3, thickness is 2.5 μm；Substrate layer 1 is silicon carbide material, and the first passivation layer 3 is silicon dioxide material.
S102. on the first passivation layer 3, etching forms the first vacancy section 301；
S103. forming groove 4 on the n type gallium nitride layer 2 in the first vacancy section 301, groove 4 is that equidistantly arrangement is multiple
Circular annular form groove, the spacing between adjacent two endless grooves is 0.5 μm, and the longitudinal section of groove 4 is inverted trapezoidal, and groove 4 degree of depth is 0.5
μm；
S104. in groove 4, grow p-type gallium nitride layer 5 by chemical vapour deposition technique, p-type gallium nitride layer 5 adulterates
Having element magnesium, the carrier concentration that p-type gallium nitride is 5 layers is 1 × 1014～1 × 1017cm-3, thickness is 0.5 μm；
S105. depositing barrier layer 6 on p-type gallium nitride layer 5 surface, barrier layer 6 is made up of titanium, aluminum, three kinds of nickel；
S106. on barrier layer 6, deposit metal level 7；
S107. on metal level 7, grow the second passivation layer 8, and etching forms the second vacancy section on the second passivation layer 8
801, the thickness of the second passivation layer 8 is
S108. deposition anode layer 902 on the metal level 7 in the second vacancy section 801, at substrate layer 1 away from n type gallium nitride
The side deposited cathode layer 901 of layer 2, obtains described gallium nitride Schottky diode.
Embodiment 2
Preparation gallium nitride Schottky diode
S101. sequentially forming n type gallium nitride layer 2 and the first passivation layer 3, n type gallium nitride on substrate layer 1,2 is N-type weight
Doped gallium nitride layer, the element of doping is phosphorus, and the carrier concentration of N-type heavy blended gallium nitride layer is 1 × 1018～1 × 1019cm-3, thickness is 3 μm；Substrate layer 1 is sapphire material, and the first passivation layer 3 is silicon dioxide material.
S102. on the first passivation layer 3, etching forms the first vacancy section 301；
S103. forming groove 4 on the n type gallium nitride layer 2 in the first vacancy section 301, groove 4 is that equidistantly arrangement is multiple
Square ring groove, the spacing between adjacent two endless grooves is 0.8 μm, and the longitudinal section of groove 4 is inverted trapezoidal, and groove 4 degree of depth is 0.6
μm；
S104. in groove 4, grow p-type gallium nitride layer 5 by chemical vapour deposition technique, p-type gallium nitride layer 5 adulterates
Having element magnesium, the carrier concentration that p-type gallium nitride is 5 layers is 1 × 1014～1 × 1017cm-3, thickness is 0.6 μm；
S105. depositing barrier layer 6 on p-type gallium nitride layer 5 surface, barrier layer 6 is made up of titanium；
S106. on barrier layer 6, deposit metal level 7；
S107. on metal level 7, grow the second passivation layer 8, and etching forms the second vacancy section on the second passivation layer 8
801, the thickness of the second passivation layer 8 is
S108. deposition anode layer 902 on the metal level 7 in the second vacancy section 801, at substrate layer 1 away from n type gallium nitride
The side deposited cathode layer 901 of layer 2, obtains described gallium nitride Schottky diode.
Embodiment 3
Preparation gallium nitride Schottky diode
S101. sequentially forming n type gallium nitride layer 2 and the first passivation layer 3, n type gallium nitride on substrate layer 1,2 is N-type weight
Doped gallium nitride layer, the element of doping is phosphorus, and the carrier concentration of N-type heavy blended gallium nitride layer is 1 × 1018～1 × 1019cm-3, thickness is 3.5 μm；Substrate layer 1 is aluminium nitride material, and the first passivation layer 3 is silicon dioxide material.
S102. on the first passivation layer 3, etching forms the first vacancy section 301；
S103. forming groove 4 on the n type gallium nitride layer 2 in the first vacancy section 301, groove 4 is that equidistantly arrangement is multiple
Triangle endless groove, the spacing between adjacent two endless grooves is 1 μm.The longitudinal section of groove 4 is inverted trapezoidal, and groove 4 degree of depth is 0.8
μm；
S104. in groove 4, grow p-type gallium nitride layer 5 by chemical vapour deposition technique, p-type gallium nitride layer 5 adulterates
Having element magnesium, the carrier concentration that p-type gallium nitride is 5 layers is 1 × 1014～1 × 1017cm-3, thickness is 0.8 μm；
S105. depositing barrier layer 6 on p-type gallium nitride layer 5 surface, barrier layer 6 is made up of aluminum, nickel, gold three kinds；
S106. on barrier layer 6, deposit metal level 7；
S107. on metal level 7, grow the second passivation layer 8, and etching forms the second vacancy section on the second passivation layer 8
801, the thickness of the second passivation layer 8 is
S108. deposition anode layer 902 on the metal level 7 in the second vacancy section 801, at substrate layer 1 away from n type gallium nitride
The side deposited cathode layer 901 of layer 2, obtains described gallium nitride Schottky diode.
In the present invention, n type gallium nitride layer 2 is provided with groove 4, and growing P-type gallium nitride layer 5 in groove 4, when giving this
When applying backward voltage in invention, p-type gallium nitride layer 5 and n type gallium nitride layer 2 form some PN junctions, and some PN junctions are connected with each other,
Block the transmission channel of electronics, thus reduced leakage current, improve backward voltage.Gallium nitride schottky two pole of the present invention
Pipe has merged the advantage of conventional schottky and PN junction diode, and forward cut-in voltage is little, and forward can pass through bigger electricity
Stream, reverse leakage current is little, reversely can bear bigger voltage and power, beneficially large-scale promotion application.
It will be apparent to those skilled in the art that can technical scheme as described above and design, make other various
Corresponding change and deformation, and all these change and deformation all should belong to the protection domain of the claims in the present invention
Within.
Claims (10)
1. a gallium nitride Schottky diode, it is characterised in that include substrate layer, the N-type nitridation set gradually from top to bottom
Gallium layer, the first passivation layer and the second passivation layer, described first passivation layer is provided with the first vacancy section, in described first vacancy section
N type gallium nitride layer be provided with groove, the n type gallium nitride layer in described first vacancy section is disposed with p-type from top to bottom
Gallium nitride layer, barrier layer and metal level, described p-type gallium nitride layer is arranged in groove, and described second passivation layer is provided with
Two vacancy sections.
2. gallium nitride Schottky diode as claimed in claim 1, it is characterised in that the metal level in described second vacancy section
On be provided with anode layer, described substrate layer is provided with cathode layer away from the side of n type gallium nitride layer.
3. gallium nitride Schottky diode as claimed in claim 1, it is characterised in that described groove is that equidistantly arrangement is multiple
Endless groove, the spacing between adjacent two endless grooves is 0.5 μm～1 μm.
4. gallium nitride Schottky diode as claimed in claim 3, it is characterised in that the longitudinal section of described groove is for falling ladder
Shape, described depth of groove is 0.5 μm～1 μm.
5. gallium nitride Schottky diode as claimed in claim 1, it is characterised in that described n type gallium nitride layer is that N-type is heavily doped
Miscellaneous gallium nitride layer, the element of doping is phosphorus, and the carrier concentration of described N-type heavy blended gallium nitride layer is 1 × 1018～1 ×
1019cm-3, thickness is 2.5-3.5 μm.
6. gallium nitride Schottky diode as claimed in claim 1, it is characterised in that described first passivation layer and the second passivation
Layer is silicon oxide compound layer, and the thickness of described second passivation layer is
7. gallium nitride Schottky diode as claimed in claim 1, it is characterised in that described barrier layer is by titanium, aluminum, nickel, gold
In any one or several composition.
8. gallium nitride Schottky diode as claimed in claim 1, it is characterised in that in described p-type gallium nitride layer doped with
Element magnesium, the carrier concentration of described p-type gallium nitride layer is 1 × 1014～1 × 1017cm-3, thickness is 0.5 μm～1 μm.
9. the preparation method of gallium nitride Schottky diode described in any one of claim 1-8, comprises the following steps:
S101. on substrate layer, sequentially form n type gallium nitride layer and the first passivation layer；
S102. on the first passivation layer, etching forms the first vacancy section；
S103. groove is formed on the n type gallium nitride layer in the first vacancy section；
P-type gallium nitride layer is grown the most in a groove by chemical vapour deposition technique；
S105. on p-type gallium nitride layer surface, deposit barrier layer；
S106. on barrier layer, deposit metal level；
Grow the second passivation layer the most on the metal layer, and etching forms the second vacancy section on the second passivation layer, obtain described
Gallium nitride Schottky diode.
10. gallium nitride Schottky diode as claimed in claim 9, it is characterised in that also include,
S108. deposition anode layer on the metal level in the second vacancy section, deposits away from the side of n type gallium nitride layer at substrate layer
Cathode layer.
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| CN1638151A (en) * | 2003-12-25 | 2005-07-13 | 三洋电机株式会社 | Semiconductor device |
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Application publication date: 20161207 |