CN106206274A - A kind of preparation method of nanometer grid - Google Patents
A kind of preparation method of nanometer grid Download PDFInfo
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- CN106206274A CN106206274A CN201610608428.3A CN201610608428A CN106206274A CN 106206274 A CN106206274 A CN 106206274A CN 201610608428 A CN201610608428 A CN 201610608428A CN 106206274 A CN106206274 A CN 106206274A
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- nanometer grid
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- nanometer
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 68
- 239000002184 metal Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000007788 liquid Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 7
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 6
- 230000008021 deposition Effects 0.000 claims abstract description 5
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 21
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims description 21
- 229940043265 methyl isobutyl ketone Drugs 0.000 claims description 21
- 238000010894 electron beam technology Methods 0.000 claims description 14
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 14
- 239000002253 acid Substances 0.000 claims description 5
- QUTGXAIWZAMYEM-UHFFFAOYSA-N 2-cyclopentyloxyethanamine Chemical compound NCCOC1CCCC1 QUTGXAIWZAMYEM-UHFFFAOYSA-N 0.000 claims 1
- BWEKDYGHDCHWEN-UHFFFAOYSA-N 2-methylhex-2-ene Chemical compound CCCC=C(C)C BWEKDYGHDCHWEN-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 12
- 239000010410 layer Substances 0.000 description 5
- 239000003292 glue Substances 0.000 description 3
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- PZOUSPYUWWUPPK-UHFFFAOYSA-N indole Natural products CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 description 1
- RKJUIXBNRJVNHR-UHFFFAOYSA-N indolenine Natural products C1=CC=C2CC=NC2=C1 RKJUIXBNRJVNHR-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses the preparation method of a kind of nanometer grid, relate to semiconductor device processing technology field；It is coated with the first photoresist in cleaned substrate material surface, and toasts, expose, and realize the first nanometer grid with the first developing liquid developing that the first photoresist is corresponding；It is coated with the second photoresist, and toast under certain constant temperature, expose, exposure figure translates to the right or to the left side relative to the figure in B, and realizes the second nanometer grid, the first nanometer grid and the second nanometer grid with the second developing liquid developing that the second photoresist is corresponding and have lap；Electron beam evaporation equipment deposition is used to obtain grid metal；Metal gate is obtained after stripping；Method is simple, by moving left and right the metal gate realizing 20 below nm in multiexposure, multiple exposure and exposure process.
Description
Technical field
The present invention relates to semiconductor device processing technology field.
Background technology
Grid technique is one of core technology of preparing of high electron mobility field-effect transistor (HEMT) device.Grid length is direct
Determining the characteristics such as the frequency of HEMT device, noise, grid length is the least, the current cut-off frequency of device (f T) and power gain cutoff
Frequency (f max) will be the highest, the noise figure of device also can be the least.Along with semiconductor technology is towards the direction of highly integrated low-power consumption
Development, the requirement to grid length is more and more higher.Constantly reducing of grid size is the significant of semiconductor fabrication process constantly progress
One of symbol.
During semiconductor technology produces at present, widely used projection lithography technology can obtain the grid close to 100 nm yardsticks
Long, but realize below hundred nanometers and run into huge challenge.Realize the nanometer grid of below hundred nanometers, general employing electron beam exposure
Realize.But, due to the electronics front scattering in photoresist and substrate and the existence of back scattering phenomenon in electronic beam exposure process,
Electron scattering track extends to adjacent domain, and it involves scope at least tens nanometer.Therefore, in electron beam actual exposure process
After, it is difficulty with the nanometer grid of grid length 20 below nm.
Summary of the invention
The technical problem to be solved in the present invention is for above-mentioned the deficiencies in the prior art, it is provided that the preparation side of a kind of nanometer grid
Method, by moving left and right the metal gate realizing 5-20 nm in multiexposure, multiple exposure and exposure process.
For solving above-mentioned technical problem, the technical solution used in the present invention is: the method includes:
A: be coated with the first photoresist in cleaned substrate material surface, and toast under certain constant temperature；
B: utilize electron beam exposure, and realize the first nanometer grid with the first developing liquid developing that the first photoresist is corresponding；
C: be coated with the second photoresist, and toast under certain constant temperature；
D: utilize electron beam exposure, exposure figure translates to the right or to the left side relative to the figure in B, and uses the second photoresist
The second corresponding developing liquid developing realizes the second nanometer grid, the first nanometer grid and the second nanometer grid lap；
E: use electron beam evaporation equipment deposition to obtain grid metal；
F: obtain metal gate after stripping.
As preferably, the first nanometer grid width is 20-100nm.
As preferably, exposure figure relative to the figure in B to right translation 5-80nm.
As preferably, the width of the second nanometer grid is 5-100nm.
As preferably, the first photoresist is polymethyl methacrylate (PMMA), and the first developer solution is methyl iso-butyl ketone (MIBK)
Proportioning mixed liquor (MIBK:IPA) with indolepopionic acid.
As preferably, MIBK:IPA is 1:3.
As preferably, the second photoresist is polydimethylglutarimide (PMGI), and the second developer solution is U.S. shipley
The CD-26 developer solution of company.
As preferably, after stripping, obtain the metal gate of metal gate 5-20nm.
As preferably, increase M: exposure figure between D and E step relative to the figure in B to the left side or to the right translation.
As preferably, exposure figure to the left side or translates 0-10nm relative to the figure in B to the right.
Use and have the beneficial effects that produced by technique scheme: the inventive method is simple, convenient operation, use two kinds
Photoresist of different nature, and the developing liquid developing that two kinds of photoresists uses are different, by left in multiexposure, multiple exposure and exposure process
Move right the metal gate realizing 20 below nm.
Accompanying drawing explanation
Fig. 1 is the structural representation of the A-B step of the embodiment of the present invention 1；
The structural representation of the C-D step of Fig. 2 embodiment of the present invention 1；
The structural representation of the E step of Fig. 3 embodiment of the present invention 1；
The structural representation of the F step of Fig. 4 embodiment of the present invention 1；
Fig. 5 is the structural representation of the A-B step of the embodiment of the present invention 3；
Fig. 6 is the structural representation of the C-D step of the embodiment of the present invention 3；
Fig. 7 is the structural representation of the M step of the embodiment of the present invention 3；
Fig. 8 is the structural representation of the E step of the embodiment of the present invention 3；
Fig. 9 is the structural representation of the F step of the embodiment of the present invention 3.
In figure: 1, backing material；2, the first photoresist；3, the second photoresist；4, the 3rd photoresist；5, grid metal.
Detailed description of the invention
The present invention is further detailed explanation with detailed description of the invention below in conjunction with the accompanying drawings.
Embodiment 1 is an embodiment of two-layer photoresist:
As Figure 1-4, for an embodiment of the preparation method of the present invention a kind of nanometer grid, the method includes:
A: be coated with the first photoresist in cleaned substrate material surface, and toast under certain constant temperature；
B: utilize electron beam exposure, and realize the first nanometer grid with the first developing liquid developing that the first photoresist is corresponding；
C: be coated with the second photoresist, and toast under certain constant temperature；
D: utilize electron beam exposure, exposure figure relative to the figure in B to translation, and with the second photoresist corresponding the
Two developing liquid developings realize the second nanometer grid, the first nanometer grid and the second nanometer grid lap；
E: use electron beam evaporation equipment deposition to obtain grid metal；
F: obtain metal gate after stripping.
First photoresist 2 and the second photoresist 3 are two kinds of photoresists of different nature, and two kinds of photoresists use difference respectively
Developing liquid developing, and only by one of which developing liquid developing, do not affected by another kind of developer solution.Pass through electron beam exposure
During move left and right, use the method for multiexposure, multiple exposure multidevelopment to realize the metal gate of below 20nm, method is simple, operation
Easy.
Exposure figure is relative to the figure in B to while translation is to right translation, and translation direction can be left, it is possible to so that
Right.
First nanometer grid width is 20-100nm, and the nanometer grid width of exposure can be arranged as required to, and is not limited to 20-
100nm。
Exposure figure can obtain according to last needs to right translation 5-80nm, the distance of translation relative to the figure in B
The size Selection of nanometer grid, be not limited to 5-80nm.
The width of the second nanometer grid is 5-100nm, and the width of the second nanometer grid is indefinite, can select as required, not office
It is limited to 5-100nm.
First photoresist is polymethyl methacrylate (PMMA), and the first developer solution is methyl iso-butyl ketone (MIBK) and indolepopionic acid
Proportioning mixed liquor (MIBK:IPA), the first photoresist can select other photoresists as required, is not limited to this kind of.
MIBK:IPA is 1:3.
Second photoresist is polydimethylglutarimide (PMGI), and the second developer solution is the CD-of shipley company of the U.S.
26 developer solutions, as long as the second photoresist selects different from the first photoresist, are not limited to this kind of.
The metal gate of metal gate 5-20nm is obtained after stripping.
Embodiment 2 is an embodiment of three layer photoetching glue:
A: be coated with the first photoresist 2 on cleaned backing material 1 surface, and toast under certain constant temperature；
B: utilize electron beam exposure, and realize the first nanometer grid with the first developing liquid developing of the first photoresist 2 correspondence；
C: be coated with the second photoresist 3, and toast under certain constant temperature；
D: utilize electron beam exposure, exposure figure translates to the right or to the left side relative to the figure in B, and uses the second photoresist
The second corresponding developing liquid developing realizes the second nanometer grid；
M: be coated with the 3rd photoresist 2, and toast under certain constant temperature；Utilizing electron beam exposure, exposure figure is relative in B
Figure translate to the left side or to the right, and realize the 3rd nanometer grid with the 3rd developing liquid developing that the 3rd photoresist is corresponding；
E: use electron beam evaporation equipment deposition grid metal 4；
F: obtain the metal gate of a length of 5-20nm of grid after stripping.
First photoresist 2 and the second photoresist 3 are two kinds of photoresists of different nature, and the 3rd photoresist can be with the first light
Photoresist is identical, as long as the 3rd photoresist and the second photoresist difference, every adjacent two layers photoresist character is different；Every kind of photoetching
Glue uses different developing liquid developings respectively, and only by one of which developing liquid developing, is not affected by another kind of developer solution.
By moving left and right in electronic beam exposure process, the method for multiexposure, multiple exposure multidevelopment is used to realize the metal of below 20nm
Grid, method is simple, easy and simple to handle.
The width of the first nanometer grid is 20-100nm, and the first nanometer grid width of exposure is indefinite, can select as required
Exposed width, is not limited to 20-100nm.
Exposure figure is relative to the figure in B to right translation 5-80nm, and translation distance is indefinite to the right, is not limited to 5-80nm,
Can select as required.
The width of the second nanometer grid is that the second nanometer grid width of 5-100nm exposure is indefinite, can select as required to expose
Optical width, is not limited to 5-100nm.
Exposure figure is indefinite to left 0-10nm translation distance to the left relative to the figure in B, is not limited to 0-10nm, can
To select as required.
The width of the 3rd nanometer grid is 5-100nm, and the 3rd nanometer grid width of exposure is indefinite, can select as required to expose
Optical width, is not limited to 5-100nm.
First photoresist 2 is polymethyl methacrylate (PMMA), and the first developer solution is methyl iso-butyl ketone (MIBK) and indole third
The proportioning mixed liquor (MIBK:IPA) of acid, it is a kind of that the first photoresist is not limited to this, it is also possible to for other photoresists, if the first light
Photoresist is different from the second photoresist.
MIBK:IPA is 1:3.
Second photoresist 3 is polydimethylglutarimide (PMGI), the CD-of the second shipley company of the developer solution U.S.
26 developer solutions, the second photoresist is not limited to this kind.
3rd photoresist and the first photoresist are identical, and for polymethyl methacrylate (PMMA), the first developer solution is methyl
Isobutyl ketone and the proportioning mixed liquor (MIBK:IPA) of indolepopionic acid, reduce the kind made with photoresist, simple and convenient.
Embodiment 3: as shown in figures 5-9:
PMMA selected by first photoresist 2, and PMGI selected by the second photoresist 3；Corresponding developer solution is: the first developer solution is MIBK:
IPA, the second developer solution is CD-26.
A: as it is shown in figure 5, be coated with PMMA on cleaned backing material 2 surface, and under 180 DEG C of constant temperatures, toast 2
Minute；
B: utilize electron beam exposure, and realize 60nm grid with MIBK:IPA (1:3) developing liquid developing；
C: as shown in Figure 6, repastes PMGI on above-mentioned sample, and toasts 2 minutes under 180 DEG C of constant temperatures；
D: utilize electron-beam exposure system to be exposed, exposure figure to right translation 20 nm, and uses CD-relative to the figure in B
26 developing liquid developings realize 60nm grid；
M: as it is shown in fig. 7, repaste PMMA in sample after step D, and toast 2 minutes under 180 DEG C of constant temperatures；Utilize electricity
Sub-beam exposure system is exposed, and exposure figure to left 20nm, uses MIBK:IPA relative to the figure in B after end exposure
(1:3) developing liquid developing realizes 60nm grid；
E: as shown in Figure 8, uses electron beam evaporation equipment evaporation grid metal；
F: as it is shown in figure 9, obtain the metal gate of a length of 20nm of grid after Bao Liing.
PMMA and PMGI more than selected for reference only, also can use the photoresist of ZEP series, can use many simultaneously
Plant the compound mode of photoresist.Additionally, the number of plies of photoresist can also be with two-layer or more than three layers.
Additionally, it is long to reduce grid further by the development size and left and right side-play amount reducing single-layer lithography glue.
After using technique scheme, method is simple, convenient operation, uses two kinds of photoresists of different nature, and two kinds
Photoresist uses different developing liquid developings, by moving left and right the gold realizing 20 below nm in multiexposure, multiple exposure and exposure process
Belong to grid.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all essences in the present invention
Any amendment, equivalent and the improvement etc. made within god and principle, should be included within the scope of the present invention.
Claims (10)
1. the preparation method of nanometer grid, it is characterised in that: the method includes:
A: be coated with the first photoresist (2) on cleaned backing material (1) surface, and toast under certain constant temperature；
B: utilize electron beam exposure, and realize the first nanometer grid with the first developing liquid developing that the first photoresist (2) is corresponding；
C: be coated with the second photoresist (3), and toast under certain constant temperature；
D: utilize electron beam exposure, exposure figure translates to the right or to the left side relative to the figure in B, and uses the second photoresist
The second corresponding developing liquid developing realizes the second nanometer grid, the first nanometer grid and the second nanometer grid lap；
E: use electron beam evaporation equipment deposition to obtain grid metal (4)；
F: obtain metal gate after stripping.
The preparation method of a kind of nanometer grid the most according to claim 1, it is characterised in that described first nanometer grid width is
20-100nm。
The preparation method of a kind of nanometer grid the most according to claim 1, it is characterised in that described exposure figure is relative in B
Figure to right translation 5-80nm.
The preparation method of a kind of nanometer grid the most according to claim 1, it is characterised in that the width of described second nanometer grid
For 5-100nm.
The preparation method of a kind of nanometer grid the most according to claim 1, it is characterised in that described first photoresist (2) is poly-
Methyl methacrylate (PMMA), the first developer solution be methyl iso-butyl ketone (MIBK) with the proportioning mixed liquor of indolepopionic acid (MIBK:
IPA).
The preparation method of a kind of nanometer grid the most according to claim 5, it is characterised in that described MIBK:IPA is 1:3.
The preparation method of a kind of nanometer grid the most according to claim 1, it is characterised in that described second photoresist (3) is poly-
Dimethyl-penten imidodicarbonic diamide (PMGI), the second developer solution is the CD-26 developer solution of shipley company of the U.S..
The preparation method of a kind of nanometer grid the most according to claim 1, it is characterised in that obtain metal gate after described stripping
The metal gate of 5-20nm.
The preparation method of a kind of nanometer grid the most according to claim 1, it is characterised in that increase between described D and E step
M: exposure figure relative to the figure in B to the left side or to the right translate.
The preparation method of a kind of nanometer grid the most according to claim 9, it is characterised in that described exposure figure is relative to B
In figure to the left side or to the right translate 0-10nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610608428.3A CN106206274A (en) | 2016-07-29 | 2016-07-29 | A kind of preparation method of nanometer grid |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610608428.3A CN106206274A (en) | 2016-07-29 | 2016-07-29 | A kind of preparation method of nanometer grid |
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| CN106206274A true CN106206274A (en) | 2016-12-07 |
Family
ID=57495554
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6255035B1 (en) * | 1999-03-17 | 2001-07-03 | Electron Vision Corporation | Method of creating optimal photoresist structures used in the manufacture of metal T-gates for high-speed semiconductor devices |
| CN1503930A (en) * | 2002-01-25 | 2004-06-09 | ������ʱ����ʽ���� | Two-layer film and method of forming pattern with same |
| TW200731332A (en) * | 2006-01-26 | 2007-08-16 | Taiwan Semiconductor Mfg Co Ltd | New aperture design for improving critical dimension accuracy and electron beam lithography throughput |
| US20100032588A1 (en) * | 2008-08-05 | 2010-02-11 | Nuflare Technology, Inc. | Writing apparatus and writing method |
| CN103367120A (en) * | 2013-07-08 | 2013-10-23 | 上海集成电路研发中心有限公司 | Forming method for high-resolution channel pattern |
| CN105511233A (en) * | 2015-12-28 | 2016-04-20 | 中国电子科技集团公司第十三研究所 | Method for preparing T-shaped gate by two times of electron beam exposure |
-
2016
- 2016-07-29 CN CN201610608428.3A patent/CN106206274A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6255035B1 (en) * | 1999-03-17 | 2001-07-03 | Electron Vision Corporation | Method of creating optimal photoresist structures used in the manufacture of metal T-gates for high-speed semiconductor devices |
| CN1503930A (en) * | 2002-01-25 | 2004-06-09 | ������ʱ����ʽ���� | Two-layer film and method of forming pattern with same |
| TW200731332A (en) * | 2006-01-26 | 2007-08-16 | Taiwan Semiconductor Mfg Co Ltd | New aperture design for improving critical dimension accuracy and electron beam lithography throughput |
| US20100032588A1 (en) * | 2008-08-05 | 2010-02-11 | Nuflare Technology, Inc. | Writing apparatus and writing method |
| CN103367120A (en) * | 2013-07-08 | 2013-10-23 | 上海集成电路研发中心有限公司 | Forming method for high-resolution channel pattern |
| CN105511233A (en) * | 2015-12-28 | 2016-04-20 | 中国电子科技集团公司第十三研究所 | Method for preparing T-shaped gate by two times of electron beam exposure |
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Application publication date: 20161207 |
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