CN106190028A - A kind of high performance semiconductor grinding agent - Google Patents
A kind of high performance semiconductor grinding agent Download PDFInfo
- Publication number
- CN106190028A CN106190028A CN201610521741.3A CN201610521741A CN106190028A CN 106190028 A CN106190028 A CN 106190028A CN 201610521741 A CN201610521741 A CN 201610521741A CN 106190028 A CN106190028 A CN 106190028A
- Authority
- CN
- China
- Prior art keywords
- parts
- grinding agent
- high performance
- semiconductor grinding
- performance semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
A kind of high performance semiconductor grinding agent, it is made up of the raw material of following parts by weight: sodium salicylate 6 11 parts, Nano graphite powder 6 12 parts, n-butyl acetate 48 parts, carborundum grain 11 17 parts, perovskite 48 parts, iron-based powder 56 parts, nonyl phenol polyethenoxy ether 8 12 parts, cellulosic polymer 57 parts, polyvinyl alcohol 3.2 8 parts, melamine cyanurate salt 49 parts, calcium hydrogen phosphate 46 parts, 57 parts of zinc sulfate, polishing particles 6 11 parts, polypropylene 56 parts, methyl-silicone oil 3.2 8.4 parts, 2.2 3.8 parts of antioxidant.The invention has the beneficial effects as follows: the semiconductor grinding agent of the present invention, there is good grinding performance, it is possible to well improve the serviceability of quasiconductor, and do not result in corrosion.
Description
Technical field
The present invention relates to a kind of high performance semiconductor grinding agent.
Background technology
During the processing and manufacturing of semiconductor chip, along with using embedded operation, (a kind of appropriate litigation fees is cheap and energy
Set up the operation of more dense component structure on the silicon die) progressively popularize, the plain conductor in chip is carried out chemistry
Mechanical lapping polishing also becomes essential.Semiconductor device can be caused corruption while grinding by existing grinding agent major part
Erosion, reduces the performance of abrasive body, shortens the use time of quasiconductor.Therefore, the performance of quasiconductor awaits changing further
Enter.
Summary of the invention
For the deficiencies in the prior art, the problem to be solved in the present invention is to provide a kind of semiconductor grinding agent, has good
Grinding performance, it is possible to well improve the serviceability of quasiconductor, and do not result in corrosion.
For solving prior art problem, the technical scheme that the present invention provides is, a kind of high performance semiconductor grinding agent, its
It is made up of the raw material of following parts by weight:
Sodium salicylate 6-11 part, Nano graphite powder 6-12 part, n-butyl acetate 4-8 part, carborundum grain 11-17 part, perovskite
4-8 part, iron-based powder 5-6 part, nonyl phenol polyethenoxy ether 8-12 part, cellulosic polymer 5-7 part, polyvinyl alcohol 3.2-8
Part, melamine cyanurate salt 4-9 part, calcium hydrogen phosphate 4-6 part, zinc sulfate 5-7 part, polishing particles 6-11 part, polypropylene 5-6
Part, methyl-silicone oil 3.2-8.4 part, antioxidant 2.2-3.8 part.
The invention has the beneficial effects as follows: the semiconductor grinding agent of the present invention, there is good grinding performance, it is possible to well
Improve the serviceability of quasiconductor, and do not result in corrosion.
Detailed description of the invention
Embodiment 1
A kind of high performance semiconductor grinding agent, it is made up of the raw material of following parts by weight:
Sodium salicylate 6 parts, Nano graphite powder 6 parts, n-butyl acetate 4 parts, carborundum grain 11 parts, perovskite 4 parts, iron-based powder
5 parts, nonyl phenol polyethenoxy ether 8 parts, cellulosic polymer 5 parts, polyvinyl alcohol 3.2 parts, melamine cyanurate salt 4 parts,
Calcium hydrogen phosphate 4 parts, 5 parts of zinc sulfate, polishing particles 6 parts, polypropylene 5 parts, methyl-silicone oil 3.2 parts, 2.2 parts of antioxidant.
Embodiment 2
A kind of high performance semiconductor grinding agent, it is made up of the raw material of following parts by weight:
Sodium salicylate 11 parts, Nano graphite powder 12 parts, n-butyl acetate 8 parts, carborundum grain 17 parts, perovskite 8 parts, ferrous alloy powder
6 parts of end, nonyl phenol polyethenoxy ether 12 parts, cellulosic polymer 7 parts, polyvinyl alcohol 8 parts, melamine cyanurate salt 9 parts,
Calcium hydrogen phosphate 6 parts, 7 parts of zinc sulfate, polishing particles 11 parts, polypropylene 6 parts, methyl-silicone oil 8.4 parts, 3.8 parts of antioxidant.
Claims (1)
1. a high performance semiconductor grinding agent, it is characterised in that: it is made up of the raw material of following parts by weight:
Sodium salicylate 6-11 part, Nano graphite powder 6-12 part, n-butyl acetate 4-8 part, carborundum grain 11-17 part, perovskite
4-8 part, iron-based powder 5-6 part, nonyl phenol polyethenoxy ether 8-12 part, cellulosic polymer 5-7 part, polyvinyl alcohol 3.2-8
Part, melamine cyanurate salt 4-9 part, calcium hydrogen phosphate 4-6 part, zinc sulfate 5-7 part, polishing particles 6-11 part, polypropylene 5-6
Part, methyl-silicone oil 3.2-8.4 part, antioxidant 2.2-3.8 part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610521741.3A CN106190028A (en) | 2016-07-06 | 2016-07-06 | A kind of high performance semiconductor grinding agent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610521741.3A CN106190028A (en) | 2016-07-06 | 2016-07-06 | A kind of high performance semiconductor grinding agent |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106190028A true CN106190028A (en) | 2016-12-07 |
Family
ID=57464781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610521741.3A Pending CN106190028A (en) | 2016-07-06 | 2016-07-06 | A kind of high performance semiconductor grinding agent |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106190028A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107216813A (en) * | 2017-05-19 | 2017-09-29 | 南通华兴石油仪器有限公司 | A kind of polishing fluid of oil instrument |
-
2016
- 2016-07-06 CN CN201610521741.3A patent/CN106190028A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107216813A (en) * | 2017-05-19 | 2017-09-29 | 南通华兴石油仪器有限公司 | A kind of polishing fluid of oil instrument |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161207 |