CN106159090B - Flexible substrate, display device and preparation method - Google Patents
Flexible substrate, display device and preparation method Download PDFInfo
- Publication number
- CN106159090B CN106159090B CN201610827455.XA CN201610827455A CN106159090B CN 106159090 B CN106159090 B CN 106159090B CN 201610827455 A CN201610827455 A CN 201610827455A CN 106159090 B CN106159090 B CN 106159090B
- Authority
- CN
- China
- Prior art keywords
- flexible
- substrate
- film
- transparent conductive
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a flexible substrate, a display device and a preparation method, wherein the flexible substrate comprises: the flexible transparent conductive substrate and the flexible insulating substrate are positioned above the flexible transparent conductive substrate; and a plurality of grooves which go deep into the flexible transparent conductive substrate are distributed on the flexible insulating substrate. The flexible substrate has a double-layer structure, the flexible conductive substrate is uniform in thickness, the provided electron mobility is high in consistency, the problems of high cost, high packaging difficulty and the like caused by vacuum evaporation are solved, and the problem that the longitudinal edge is not uniform due to the coffee ring effect generated when ink is printed can be solved by the flexible insulating substrate with the groove.
Description
Technical Field
The invention relates to the technical field of display, in particular to a flexible substrate, a display device and a preparation method.
Background
The luminescent Quantum Dots (QDs) have unique advantages in display materials due to their high luminescent efficiency, narrow half-peak width, good stability, and the like. The Quantum Dots (QDs) can be used as ink for developing printing, spin coating and other process technologies, for example, the quantum dot ink is used for preparing display devices, so that the utilization rate is improved, and the cost is reduced. Therefore, quantum dot flexible printing display is expected to become the next generation display technology in the future novel display technology.
At present, the mature technology is the flexible display technology based on the TFT (field effect transistor), however, the cost of these technologies is high by using the vacuum evaporation technology, and there are still many technical problems to break through when realizing the real large area bendable. The development of flexible printed display technologies for QLEDs and OLEDs has mainly focused on the preparation of printing templates and the development of corresponding printed materials.
The printing templates prepared based on the prior art are strip-shaped groove substrates with arrays, the printing points of each groove of the templates can only control the transverse edge uniformity of the pixel points of the printing device, but the uniformity of the longitudinal edge of the templates can cause irregular longitudinal edge due to the fact that the printed ink is easy to generate coffee ring effect, the quality of the whole pixel points can be further influenced, and meanwhile the display effect of the whole flexible display panel can be reduced. Moreover, most of the conductive substrates of the existing printing templates are prepared by vacuum evaporation, and the conductive substrates have poor flexibility and high vacuum evaporation cost. In addition, the display panel prepared by the printing template has blank areas in the grooves, so that the requirement on the vacuumizing condition is higher and the packaging difficulty is higher when the whole display panel is packaged.
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
In view of the defects of the prior art, the present invention provides a flexible substrate, a display device and a manufacturing method thereof, and aims to solve the problems of irregular longitudinal edges, high packaging difficulty and the like when printing pixels in the prior flexible display technology.
The technical scheme of the invention is as follows:
a flexible substrate, comprising: the flexible transparent conductive substrate and the flexible insulating substrate are positioned above the flexible transparent conductive substrate; and a plurality of grooves which go deep into the flexible transparent conductive substrate are distributed on the flexible insulating substrate.
The flexible substrate, wherein the flexible insulating substrate is one or more of a polyethylene film, a polypropylene film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polyimide film, a polycarbonate film, a polyvinyl chloride film or a polyvinyl alcohol film, a polymethyl methacrylate film, a polystyrene film, a polyvinyl chloride film, a poly-alpha-methyl styrene resin film, a polybutylene terephthalate film, a polypropylene carbonate film, a natural rubber film, a nitrile rubber film, a silicon carbide film, an arsenic sulfide film, a silicon dioxide film, a butyl rubber film, an isoprene rubber film, a phenol resin film, a styrene butadiene rubber film, a low density polyethylene film, and a linear low density polyethylene film.
The flexible substrate is one or more of tin-doped indium trioxide, aluminum-doped zinc oxide, graphene, a metal sheet, polyethylene terephthalate, polycarbonate, polyimide, a bismuth selenide nano sheet, a bismuth telluride nano sheet and an antimony telluride nano sheet.
The flexible substrate, wherein the grooves are distributed in an array.
The flexible substrate, wherein, the recess is cylindrical structure.
The flexible substrate is characterized in that the diameter of the groove is 100-500 nm.
The flexible substrate is characterized in that the thickness of the flexible insulating substrate is 10-500nm, and the thickness of the flexible transparent conductive substrate is 10-500 nm.
A method for preparing a flexible substrate as described above, comprising:
step A, manufacturing a flexible insulating substrate;
b, carrying out vacuum deposition or epitaxial growth on the surface of the flexible insulating substrate to obtain a flexible transparent conductive substrate;
and step C, etching or impressing the flexible insulating substrate to process a plurality of grooves which penetrate into the flexible transparent conductive substrate on the flexible insulating substrate.
A display device, comprising, in order from bottom to top: the organic light emitting diode comprises a flexible substrate, a hole transport layer, a light emitting layer, an electron transport layer and a cathode, wherein the flexible substrate is the flexible substrate.
A method of manufacturing a display device, comprising:
a, firstly, printing a hole transport layer on the flexible substrate by using an ink-jet printer;
b, printing a light-emitting layer on the surface of the hole transport layer;
c, printing an electron transport layer on the surface of the light-emitting layer;
and d, finally manufacturing a cathode on the surface of the electron transport layer.
Has the advantages that: the flexible substrate has a double-layer structure, the flexible conductive substrate has uniform thickness, the provided electron mobility is high in consistency, the problems of high cost, high packaging difficulty and the like caused by vacuum evaporation are solved, the problem of uneven longitudinal edges caused by a coffee ring effect generated during ink printing can be solved, and the packaging difficulty can be reduced. Meanwhile, when the flexible substrate is used for manufacturing the display device, the transverse edges and the longitudinal edges of the pixel points are high in uniformity, so that the display effect is better, and the manufacturing efficiency is higher.
Drawings
FIG. 1 is a schematic structural diagram of a flexible substrate according to a preferred embodiment of the present invention.
FIG. 2 is a flow chart of a method for manufacturing a flexible substrate according to a preferred embodiment of the present invention.
FIG. 3 is a flow chart illustrating the fabrication of one embodiment of a flexible substrate according to the present invention.
FIG. 4 is a flow chart of a method for manufacturing a display device according to a preferred embodiment of the present invention.
Detailed Description
The invention provides a flexible substrate, a display device and a preparation method, and the invention is further described in detail below in order to make the purpose, technical scheme and effect of the invention clearer and clearer. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1, the present invention provides a flexible substrate comprising: a flexible transparent conductive substrate 200 and a flexible insulating substrate 100 over the flexible transparent conductive substrate 200; a plurality of grooves 110 are distributed on the flexible insulating substrate 100 and extend into the flexible transparent conductive substrate 200.
In the present invention, the flexible transparent conductive substrate 200 is combined with the flexible insulating substrate 100 to form a layered structure, wherein the flexible transparent conductive substrate 200 has a uniform thickness, the provided electron mobility is consistent and high, and the high cost caused by vacuum evaporation is avoided. The flexible insulating substrate 100 is provided with a plurality of grooves 110, and the grooves 110 can effectively avoid the coffee ring effect when printing ink, so that the problem of uneven longitudinal edges of pixel points is solved. Meanwhile, the flexible insulating substrate 100 with the groove 110 can also play a part of the packaging effect, and the packaging difficulty can be reduced. The groove 110 is deep into the flexible transparent conductive substrate 200, i.e. the height of the groove is greater than or equal to the height of the flexible insulating substrate 100, in order to ensure that the flexible transparent conductive substrate 200 can be used as an electrode of a device.
Further, the flexible insulating substrate 100 is a polyethylene film, a polypropylene film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polyimide film, a polycarbonate film, a polyvinyl chloride film or a polyvinyl alcohol film, a polymethyl methacrylate film (PMMA), a polystyrene film (PS), a polyvinyl chloride film, a poly α -methyl styrene resin film, a polybutylene terephthalate film, a polypropylene carbonate film, a natural rubber film (NR), a nitrile rubber film, a silicon film (Si), a silicon carbide film (SiC), an arsenic sulfide film (As), a silicon sulfide film (SiC)2S3) Silicon dioxide film (SiO)2) One or more of butyl rubber film (IIR), isoprene rubber film (IR), phenol resin film (PF), styrene-butadiene rubber film (SBR), low density polyethylene film (LDPE), and linear low density polyethylene film (LLDPE). The thickness of the flexible insulating substrate is preferably 10-500nm, such as 200 nm.
Further, the flexible transparent conductive substrate 200 is tin-doped indium oxide (ITO), aluminum-doped zinc oxide (AZO), graphene, a metal foil, polyethylene terephthalate (PET), Polycarbonate (PC), Polyimide (PI), bismuth selenide nanosheet (Bi)2Se3) Bismuth telluride nanosheets (Bi)2Te3) And antimony telluride nano-flakes. The thickness of the flexible transparent conductive substrate is preferably 10-500nm, such as 50nm or 200 nm.
Further, the grooves 110 are distributed in an array form, for example, the grooves 110 are equidistantly arranged at the same interval, the grooves 110 are preferably in a cylindrical shape, and the grooves 110 with a cylindrical structure can avoid the coffee ring effect when ink is printed, and simultaneously solve the defect that pixel points of the device are incomplete. The diameter of the groove 110 is preferably 100 to 500nm, for example 250 nm.
The present invention also provides a method for preparing the flexible substrate, as shown in fig. 2, including:
step S1, manufacturing a flexible insulating substrate;
step S2, depositing or epitaxially growing a flexible transparent conductive substrate on the surface of the flexible insulating substrate in vacuum;
and step S3, etching or stamping the flexible insulating substrate to process a plurality of grooves which are deep into the flexible transparent conductive substrate on the flexible insulating substrate.
As shown in fig. 3, a flexible transparent conductive substrate 200 is formed on the surface of the flexible insulating substrate 100 by vacuum deposition or epitaxial growth, and forms a significantly layered structure with the flexible insulating substrate 100, which avoids the high cost caused by vacuum evaporation. In step S3, etching may be performed by using an ion beam or an electron beam or imprinting may be performed by using a corresponding template, so as to obtain the cylindrical grooves 110 distributed in an array form on the flexible insulating substrate 100. Finally, the flexible substrate with the structure can be used for carrying out subsequent preparation of printing QLED or OLED.
The following describes a process for manufacturing a flexible substrate by using a specific embodiment.
1) The silicon carbide thin film (SiC, i.e., flexible insulating substrate) was prepared as follows:
the substrate used is Si, the resistivity is 10 ohm per centimeter, and the thickness is 380 mu m. The Si substrate is subjected to a series of chemical processes before being placed in the vacuum chamber. The method comprises the following specific steps:
11) ultrasonic cleaning with analytically pure toluene, carbon tetrachloride, acetone, ethanol and deionized water for 3 min.
12) Soaking in mixed solution of concentrated sulfuric acid and hydrogen peroxide for 5 min.
13) Soaking in 4% hydrofluoric acid solution to etch away the native oxide layer on the surface.
14) Washed with deionized water for several times and dried with high-purity nitrogen, and then quickly placed into a vacuum chamber.
15) Before growing SiC, the Si substrate is annealed at 300 ℃ for one hour to remove adsorbed water vapor and other gases, and then the temperature of the Si substrate is raised to 630 ℃ to grow a Si buffer layer, so that an ordered and clean Si substrate surface can be obtained.
16) The Si substrate temperature was raised to 720 ℃ and carbonized (C) for 30 min.
17) And raising the temperature of the Si substrate to 1100 ℃, jointly evaporating Si and C, and growing the SiC film, wherein the growth time is 100min, and the thickness of the SiC film is about 10-500nm, such as 200 nm.
2) The preparation of the graphene epitaxially grown on the silicon carbide thin film (also called SiC substrate) (i.e. the flexible transparent conductive substrate) is as follows:
the SiC substrate is cleaned before being placed in a vacuum chamber. The method comprises the following specific steps:
21) and respectively ultrasonically cleaning the carbon tetrachloride, acetone, ethanol and deionized water which are analytically pure in sequence to remove the organic matters adsorbed on the surface.
22) Soaking the mixture for 5min by using a mixed solution of concentrated sulfuric acid and hydrogen peroxide (the volume ratio is 1: 1), and washing the mixture by using deionized water to remove oxides, metals and organic impurities on the surface.
23) Etching the surface with 5% hydrofluoric acid solution for 3min, removing the oxide layer on the surface, and washing with deionized water for several times.
24) Drying with high-purity nitrogen, and quickly placing into a vacuum chamber.
25) Raising the temperature of the SiC substrate to 300 ℃ removes water vapor on the surface.
26) The SiC substrate temperature is raised to 750 ℃, Si is evaporated (Si beam current is 0.3 nm/min), and the deposition time is about 5 min.
27) Stopping steaming Si, raising the temperature to 1300 ℃, keeping the annealing time at 10min, and then naturally cooling to room temperature to obtain a graphene layer with the thickness of 10-500nm, such as 200 nm.
3) The flexible substrate with the array cylindrical groove structure is prepared as follows:
31) after the prepared SiC substrate with the graphene layer is cleaned, ion beam etching is carried out on the SiC layer, a groove structure which is cylindrical in array and has the diameter of 100-500nm (for example, 250 nm) is processed (specific etching parameters are determined according to different equipment), and meanwhile, the depth of the groove is larger than the thickness of SiC and smaller than the thickness of the whole substrate containing graphene and SiC so as to ensure that the groove is in contact with the graphene layer.
32) And (3) carrying out a series of cleaning on the etched flexible substrate, drying the flexible substrate by using high-purity nitrogen, quickly placing the flexible substrate into a vacuum chamber, and then carrying out annealing treatment at 100-300 ℃ to remove water vapor in the groove.
The invention also provides a display device, which sequentially comprises the following components from bottom to top: the light-emitting device comprises a flexible substrate, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode, wherein the flexible substrate is the flexible substrate.
The hole transport layer is made of nickel oxide, tungsten oxide, molybdenum oxide, chromium oxide, vanadium oxide, p-type gallium nitride and MoS2、WS2、WSe2、MoSe2Poly (ethylenedioxythiophene) -poly (styrenesulfonate), poly (perfluoroethylene-perfluoroethersulfonic acid) -doped polythiophenes, poly [ N, N '-bis (4-butylphenyl) -N, N' -bis (phenyl) benzidine]Poly [ (9, 9-dioctylfluorene-2, 7-diyl) -co- (4, 4' - (N- (4-sec-butylphenyl) diphenylamine)]Poly (9-vinylcarbazole), poly (9, 9-di-n-octylfluorenyl-2, 7-diyl), 2,3,5, 6-tetrafluoro-7, 7,8, 8-tetracyanodimethyl-p-benzoquinone, poly [ (9, 9-di-n-octylfluorenyl-2, 7-diyl) -alt- (benzo [2,1, 3-diyl)]Thiadiazole-4, 8-diyl)]One or more of 4,4 '-bis (9-carbazole) biphenyl, 4',4'' -tris (carbazol-9-yl) triphenylamine, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine, N '-bis- (1-naphthyl) -N, N' -diphenyl-1, 1 '-biphenyl-4, 4' -diamine.
The luminescent layer can be a quantum dot luminescent layer or an organic small molecule luminescent layer, the material of the quantum dot luminescent layer comprises one or more of binary phase, ternary phase and quaternary phase quantum dots, wherein the binary phase quantum dots comprise CdS, CdSe, CdTe, InP, AgS, PbS, PbSe, HgS and the like, and the ternary phase quantum dots comprise ZnXCd1-XS、CuXIn1-XS、ZnXCd1-XSe、ZnXSe1-XS、ZnXCd1-XTe、PbSeXS1-XEtc. the quaternary phase quantum dots include ZnXCd1-XS/ZnSe、CuXIn1- XS/ZnS、ZnXCd1-XSe/ZnS、CuInSeS、ZnXCd1-XTe/ZnS、 PbSeXS1-X/ZnS, etc. The material of the organic small molecule light-emitting layer includes one or more of polyphenyl and derivatives thereof, polyparaphenylene (PPP) and derivatives thereof, Polythiophene (PAT) and derivatives thereof, polypyrrole (PAP) and derivatives thereof, polypyridine (PPY) and derivatives thereof, polyphenylacetylene and derivatives thereof, polyparaphenylene vinylene (PPV) and derivatives thereof, Polythienylenevinylene (PTV), Polynaphthalene (PNV) and derivatives thereof, polypyridylyvinylene (PPYV) and derivatives thereof, and the like.
The electron transport layer is made of ZnO or TiO2、SnO、ZrO2、Ta2O3And the like.
The cathode can be Al, LiF/Al, Ca, Ba, Ca/Al, LiF/Ag, Ca/Ag, BaF2、BaF2/Al、BaF2/Ag、BaF2/Ca/Al、BaF2/Ca、Ag、Mg、CsF/Al、CsCO3One or more of Al and the like.
The present invention also provides a method for manufacturing the display device, as shown in fig. 4, including:
step T1, printing a hole transport layer on the flexible substrate by using an ink-jet printer;
step T2, printing a luminescent layer on the surface of the hole transport layer;
step T3, printing an electronic transmission layer on the surface of the quantum dot light-emitting layer;
and T4, finally, manufacturing a cathode on the surface of the electron transport layer.
In the invention, each functional layer is mixed with a solvent to prepare corresponding printing ink, and each functional layer is printed. The solvent in which the ink is prepared includes at least one of chlorobenzene, o-dichlorobenzene, tetrahydrofuran, anisole, morpholine, toluene, o-xylene, m-xylene, p-xylene, n-hexane, dichloromethane, chloroform, 1, 4-dioxane, 1, 2-dichloroethane, 1,1, 1-trichloroethane, 1,1,2, 2-tetrachloroethane, tetrahydronaphthalene, decalin, and the like, but is not limited thereto.
Taking a display device as an example of a QLED, the preparation method comprises the following steps:
in step T1, for example, the ink of PEDOT, PSS hole transport layer, is printed by an ink-jet printer, and then annealed at 150 ℃ for 30min to completely remove the solvent and water vapor in the ink;
then in the step T2, printing CdSe/ZnS red quantum dot light-emitting layer ink, and then adopting the stepped temperature to respectively anneal for 10min at 80 ℃, 100 ℃, 120 ℃, 150 ℃ and 180 ℃ in sequence;
in step T3, the ZnO nanoparticle electron transport layer ink was printed and then annealed at 150 ℃ for 30 min.
In step T4, an Al electrode is evaporated by vacuum deposition as the cathode of the last QLED and also the cathode of the whole flexible panel.
Finally, the whole flexible panel can be packaged by spraying the packaging adhesive by a spraying method. The packaging adhesive is not limited to epoxy resin, silica gel, epoxy, acrylic acid, cyanoacrylate and the like.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (8)
1. A flexible substrate, comprising: the flexible transparent conductive substrate and the flexible insulating substrate are positioned above the flexible transparent conductive substrate; a plurality of grooves which are deep into the flexible transparent conductive substrate are distributed on the flexible insulating substrate; the groove is of a cylindrical structure; the thickness of the flexible transparent conductive substrate is uniform; the diameter of the groove is 100-500 nm; the flexible substrate is prepared by the following steps:
manufacturing a flexible insulating substrate;
vacuum deposition or epitaxial growth of a flexible transparent conductive substrate is carried out on the surface of the flexible insulating substrate;
etching or impressing the flexible insulating substrate to process a plurality of grooves which are deep into the flexible transparent conductive substrate on the flexible insulating substrate;
the depth of the groove is larger than the thickness of the flexible insulating substrate and smaller than the thickness of the flexible substrate.
2. The flexible substrate according to claim 1, wherein the flexible insulating substrate is one or more of a polyethylene film, a polypropylene film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polyimide film, a polycarbonate film, a polyvinyl chloride film or a polyvinyl alcohol film, a polymethyl methacrylate film, a polystyrene film, a polyvinyl chloride film, a poly- α -methyl styrene resin film, a polybutylene terephthalate film, a polypropylene carbonate film, a natural rubber film, a nitrile rubber film, a silicon carbide film, an arsenic sulfide film, a silica film, a butyl rubber film, an isoprene rubber film, a phenol resin film, a styrene-butadiene rubber film, a low density polyethylene film, and a linear low density polyethylene film.
3. The flexible substrate of claim 1, wherein the flexible transparent conductive substrate is one or more of tin-doped indium trioxide, aluminum-doped zinc oxide, graphene, metal flakes, polyethylene terephthalate, polycarbonate, polyimide, bismuth selenide nanosheets, bismuth telluride nanosheets, and antimony telluride nanosheets.
4. A flexible substrate according to claim 1, wherein the grooves are distributed in an array.
5. The flexible substrate according to claim 1, wherein the flexible insulating substrate has a thickness of 10 to 500nm, and the flexible transparent conductive substrate has a thickness of 10 to 500 nm.
6. A method for preparing a flexible substrate according to claim 1, comprising:
step A, manufacturing a flexible insulating substrate;
b, carrying out vacuum deposition or epitaxial growth on the surface of the flexible insulating substrate to obtain a flexible transparent conductive substrate;
step C, etching or impressing the flexible insulating substrate to process a plurality of grooves which penetrate into the flexible transparent conductive substrate on the flexible insulating substrate; the groove is of a cylindrical structure; the thickness of the flexible transparent conductive substrate is uniform; the depth of the groove is larger than the thickness of the flexible insulating substrate and smaller than the thickness of the flexible substrate.
7. A display device, comprising in order from bottom to top: the organic light emitting diode comprises a flexible substrate, a hole transport layer, a light emitting layer, an electron transport layer and a cathode, wherein the flexible substrate is the flexible substrate according to any one of claims 1 to 5.
8. A method of fabricating a display device, comprising:
a step of printing a hole transport layer on the flexible substrate according to any one of claims 1 to 5 by using an ink jet printer;
b, printing a light-emitting layer on the surface of the hole transport layer;
c, printing an electron transport layer on the surface of the light-emitting layer;
and d, finally manufacturing a cathode on the surface of the electron transport layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610827455.XA CN106159090B (en) | 2016-09-18 | 2016-09-18 | Flexible substrate, display device and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610827455.XA CN106159090B (en) | 2016-09-18 | 2016-09-18 | Flexible substrate, display device and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106159090A CN106159090A (en) | 2016-11-23 |
| CN106159090B true CN106159090B (en) | 2020-09-22 |
Family
ID=57340724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610827455.XA Active CN106159090B (en) | 2016-09-18 | 2016-09-18 | Flexible substrate, display device and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106159090B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106848075A (en) * | 2016-12-31 | 2017-06-13 | 固安翌光科技有限公司 | OLED, OLED screen body and the preparation method that can freely cut |
| CN108963101B (en) * | 2017-11-30 | 2022-08-26 | 广东聚华印刷显示技术有限公司 | Release layer for manufacturing flexible display device and composite substrate |
| CN109713124A (en) * | 2018-03-06 | 2019-05-03 | 广东聚华印刷显示技术有限公司 | Composite and flexible substrate, flexible display and preparation method thereof |
| CN108520920B (en) * | 2018-03-29 | 2020-06-09 | 东华大学 | Polymer-based phototactic perovskite solar cell and preparation method thereof |
| CN109461841B (en) | 2018-11-02 | 2021-11-09 | 京东方科技集团股份有限公司 | OLED display substrate, manufacturing method thereof and display device |
| CN109467983B (en) * | 2018-12-14 | 2021-02-05 | 中国科学院长春应用化学研究所 | Organic small-molecule luminescent material ink and preparation method thereof |
| CN110064276B (en) * | 2019-04-08 | 2022-04-01 | Tcl华星光电技术有限公司 | Ink jet printing apparatus |
| CN110112192B (en) * | 2019-04-29 | 2021-07-13 | 云谷（固安）科技有限公司 | Organic light-emitting display module and electronic equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104103775A (en) * | 2013-04-03 | 2014-10-15 | 三星显示有限公司 | Flexible display device, and method for manufacturing flexible display device |
| CN104392901A (en) * | 2014-10-28 | 2015-03-04 | 京东方科技集团股份有限公司 | Flexible underlying substrate and manufacturing method thereof |
| CN104638198A (en) * | 2013-11-11 | 2015-05-20 | 乐金显示有限公司 | Ink for display device manufacturing, method for manufacturing the same, and method for manufacturing the display device |
| KR20160096280A (en) * | 2015-02-04 | 2016-08-16 | 삼성디스플레이 주식회사 | Method of manufacturing a flexible substrate |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2437110B (en) * | 2006-04-12 | 2009-01-28 | Cambridge Display Tech Ltd | Optoelectronic display and method of manufacturing the same |
| US20160062008A1 (en) * | 2013-03-05 | 2016-03-03 | Ronald Steven Cok | Stacked large-format imprinting method |
| CN105576002A (en) * | 2015-12-14 | 2016-05-11 | Tcl集团股份有限公司 | Pixel unit, pixel structure and display device |
-
2016
- 2016-09-18 CN CN201610827455.XA patent/CN106159090B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104103775A (en) * | 2013-04-03 | 2014-10-15 | 三星显示有限公司 | Flexible display device, and method for manufacturing flexible display device |
| CN104638198A (en) * | 2013-11-11 | 2015-05-20 | 乐金显示有限公司 | Ink for display device manufacturing, method for manufacturing the same, and method for manufacturing the display device |
| CN104392901A (en) * | 2014-10-28 | 2015-03-04 | 京东方科技集团股份有限公司 | Flexible underlying substrate and manufacturing method thereof |
| KR20160096280A (en) * | 2015-02-04 | 2016-08-16 | 삼성디스플레이 주식회사 | Method of manufacturing a flexible substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106159090A (en) | 2016-11-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106159090B (en) | Flexible substrate, display device and preparation method | |
| Jiang et al. | Light-emitting diodes of colloidal quantum dots and nanorod heterostructures for future emissive displays | |
| CN105280710B (en) | Electronic device including graphene and quantum dots | |
| US7910400B2 (en) | Quantum dot electroluminescence device and method of fabricating the same | |
| JP5326289B2 (en) | ORGANIC EL ELEMENT AND DISPLAY DEVICE INCLUDING THE SAME | |
| CN106450018B (en) | QLED and preparation method thereof | |
| KR101144588B1 (en) | Organic electronic device with flexible transparent conductor including graphene sheet and manufacturing method thereof | |
| WO2020238713A1 (en) | Light-emitting diode device and manufacturing method therefor, and display panel and display apparatus | |
| US20180337358A1 (en) | Method for fabricating thin film transistor, method for fabricating array substrate, and a display apparatus | |
| CN107195782A (en) | Thin film transistor (TFT) preparation method, array substrate manufacturing method and display device | |
| WO2018002594A1 (en) | Organic/inorganic hybrid electroluminescent device with two-dimensional material emitting layer | |
| JP2007067291A (en) | Electroluminescence element and functional device | |
| CN105304830A (en) | Quantum dot light-emitting field effect transistor and preparation method thereof | |
| KR100805270B1 (en) | Flexible organic light emitting diode using transparent organic based electrode and method for manufacturing this | |
| KR102467691B1 (en) | Quantum dot light-emitting device, method of fabricating the same and display device including quantum dot light-emitting device | |
| CN109285947B (en) | LED thin film LED substrate for printing, LED thin film LED device and preparation method thereof | |
| CN107146805B (en) | Array substrate and display device | |
| CN106299044B (en) | A kind of printing flexible substrate, light emitting diode with quantum dots and preparation method thereof | |
| CN111384247A (en) | Quantum dot light-emitting diode and preparation method thereof | |
| CN113130774B (en) | Quantum dot light-emitting diode, preparation method thereof and display device | |
| CN109994650B (en) | Film and preparation method and application thereof | |
| Nahhas | Review of GaN/ZnO hybrid structures based materials and devices | |
| CN113130776B (en) | Quantum dot light-emitting diode and preparation method thereof | |
| US9559328B2 (en) | Organic light-emitting display apparatus and method of manufacturing the same | |
| CN111384262A (en) | Quantum dot light-emitting diode and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 516006 TCL technology building, No.17, Huifeng Third Road, Zhongkai high tech Zone, Huizhou City, Guangdong Province Applicant after: TCL Technology Group Co.,Ltd. Address before: 516006 Guangdong province Huizhou Zhongkai hi tech Development Zone No. nineteen District Applicant before: TCL RESEARCH AMERICA Inc. |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |