CN105304830A - Quantum dot light-emitting field effect transistor and preparation method thereof - Google Patents
Quantum dot light-emitting field effect transistor and preparation method thereof Download PDFInfo
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- CN105304830A CN105304830A CN201510649142.5A CN201510649142A CN105304830A CN 105304830 A CN105304830 A CN 105304830A CN 201510649142 A CN201510649142 A CN 201510649142A CN 105304830 A CN105304830 A CN 105304830A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/30—Organic light-emitting transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The invention is suitable for the field of semiconductor technology, and provides a quantum dot light-emitting field effect transistor and a preparation method thereof. The quantum dot light-emitting field effect transistor comprises the components of a gate electrode which projects from one side and forms a gate electrode boss; an insulating layer which is arranged on the gate electrode and does not contact with the gate electrode boss; a source electrode which is arranged on the insulating layer at the side that faces the gate electrode boss; a carbon nanotube layer which is arranged on the insulating layer and is connected with the source electrode; a semiconductor layer which is arranged on the carbon nanotube layer and does not contact with the source electrode; and a quantum dot light-emitting layer and a drain electrode which are successively laminated on the semiconductor layer.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly relate to a kind of quantum dot light emitting field-effect transistor and preparation method thereof.
Background technology
Light emitting diode with quantum dots (QLED) is a kind of high-performance luminescent device using the quantum dot of nanoscale as luminescent material, and it has huge potential using value in display field.QLED comprises quantum dot light emitting layer and electrode; in order to realize high performance quanta point electroluminescent; usually being also provided with other auxiliary functional layers helps charge carrier to be efficiently injected in quantum dot; they are carrier injection layer (electron injection, hole are injected) and transport layer (electric transmission, hole transport) respectively; Fig. 1 (a) is depicted as a typical QLED device architecture; wherein, anode, hole injection layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer, electron injecting layer and negative electrode is respectively 1 '-7 '.In order to the pattern that QLED can be utilized to show shades of colour, various shape, red, green, blue three look QLED can be integrated in preparation with the form of pixel to be had on the backboard of field-effect transistor (FET) array, by FET control QLED.Fig. 1 (b) gives contact-type field-effect transistor schematic diagram of the typical end (8 '-13 ' be followed successively by substrate, grid, insulating barrier, semiconductor layer, source electrode and drain electrode), because FET is a kind of three electrode devices, all can the performance of control device to a certain extent by the size that regulates voltage and grid voltage between source-drain electrode.
Although QLED and FET being made direct FET driving QLED is on the same substrate the technology of current main flow, on the one hand, the preparation technology of this method is very complicated, and cost of manufacture is very high; On the other hand, due to luminescent quantum dot in traditional Q LED valence band general very dark (-6.5--7.0eV), result in hole injection barrier very large, be unfavorable for the acquisition of efficient QLED device.
Summary of the invention
The object of the present invention is to provide a kind of quantum dot light emitting field-effect transistor, be intended to solve prior art QLED and FET is made direct FET on the same substrate and drive the complicated process of preparation that QLED causes, the problem that cost of manufacture is high, and thus obtained QLED device causes greatly the problem that luminous efficiency is low due to hole injection barrier.
Another object of the present invention is to the preparation method that a kind of quantum dot light emitting field-effect transistor is provided.
The present invention is achieved in that a kind of quantum dot light emitting field-effect transistor, comprises a grid, and described grid protrudes in side and forms grid boss;
Be arranged on the insulating barrier on described grid, and described insulating barrier does not contact with described grid boss;
Be arranged on the source electrode of side relative with described grid boss on described insulating barrier;
Be arranged on the carbon nanotube layer that described insulating barrier is connected with described source electrode;
Be arranged on the semiconductor layer on described carbon nanotube layer, and described semiconductor layer not with described source contact;
And the quantum dot light emitting layer be cascading on described semiconductor layer and drain electrode.
And a kind of preparation method of quantum dot light emitting field-effect transistor, comprises the following steps:
There is provided a grid, and described grid protrudes formation grid boss in side;
Depositing insulating layer on described grid;
Side relative with described grid boss on described insulating barrier deposits source electrode;
Described insulating barrier deposits the carbon nanotube layer that one deck is connected with described source electrode;
Depositing semiconductor layers, quantum dot light emitting layer and drain electrode successively on described carbon nanotube layer.
Quantum dot light emitting field-effect transistor provided by the invention, QLED luminescence and organic field effect tube are controlled two functions to be concentrated on a device (quantum dot light emitting field-effect transistor), the number of charge carrier in raceway groove can be regulated and controled by adjustment grid voltage size, and then the electroluminescence in control QLED.Concrete, on the one hand, by the cooperation regulation and control between grid voltage and source, drain voltage, can make can produce a large amount of holes in conducting channel, thus be conducive to the energy barrier that overcomes between hole transmission layer and quantum dot light emitting layer, promote the luminous efficiency of QLED, extend the useful life of device.
On the other hand, in quantum dot light emitting field-effect transistor of the present invention, electronics and hole are luminous by radiation recombination after quantum dot light emitting layer meets, in the process of luminescence, the key parameters such as the luminosity of device both can be controlled by the size of grid voltage, also can be controlled by source, drain voltage.Thus can the injection of charge carrier in control QLED better, improve the balance of charge carrier, and then improve the performance of device.
In addition, quantum dot light emitting field-effect transistor provided by the invention, by luminous and control two functions concentrate on a device simplifies device preparation flow, reduce production cost, and decrease the consumption of energy, improve capacity usage ratio.
The preparation method of quantum dot light emitting field-effect transistor provided by the invention, QLED luminescence and organic field effect tube are controlled two functions to be concentrated on a device (quantum dot light emitting field-effect transistor), with originally prepare QLED respectively and organic field effect tube compares, significantly simplify the preparation flow of device, reduce production cost, and decrease the consumption of energy, improve capacity usage ratio.
Accompanying drawing explanation
Fig. 1 is the structural representation of the typical QLED device that provides of prior art and end contact-type field-effect transistor;
Fig. 2 is the structural representation of the quantum dot light emitting field-effect transistor that the embodiment of the present invention provides;
Fig. 3 is the structural representation of the P raceway groove quantum dot light emitting field-effect transistor that the embodiment of the present invention provides;
Fig. 4 is the structural representation of the N raceway groove quantum dot light emitting field-effect transistor that the embodiment of the present invention provides.
Embodiment
In order to make the technical problem to be solved in the present invention, technical scheme and beneficial effect clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Composition graphs 2-4, embodiments provides a kind of quantum dot light emitting field-effect transistor, comprises a grid 1, and described grid 1 protrudes in side and forms grid boss 101;
Be arranged on the insulating barrier 2 on described grid 1, and described insulating barrier 2 does not contact with described grid boss 101;
Be arranged on the source electrode 3 of side relative with described grid boss 101 on described insulating barrier 2;
Be arranged on the carbon nanotube layer 4 that described insulating barrier 2 is connected with described source electrode 3;
Be arranged on the semiconductor layer 5 on described carbon nanotube layer 4, and described semiconductor layer 5 does not contact with described source electrode 3;
And be cascading quantum dot light emitting layer on described semiconductor layer 58 and drain electrode 11, as shown in Figure 2.
In the embodiment of the present invention, in order to realize high performance quanta point electroluminescent, as preferred embodiment, described quantum dot light emitting field-effect transistor also comprises at least one deck in hole injection layer 6, hole transmission layer 7, electron transfer layer 9 and electron injecting layer 10.As most preferred embodiment, in described quantum dot light emitting field-effect transistor, comprise hole injection layer 6, hole transmission layer 7, electron transfer layer 9 and electron injecting layer 10 simultaneously.The method to set up of wherein said hole injection layer 6, hole transmission layer 7, electron transfer layer 9 and electron injecting layer 10 is conventional set-up mode in this area.
In the embodiment of the present invention, the material of described semiconductor layer 5 can select P type semiconductor material or N type semiconductor material.According to the Material selec-tion of described semiconductor layer 5, correspondingly P raceway groove quantum dot light emitting field-effect transistor or N raceway groove quantum dot light emitting field-effect transistor can be obtained.
As a concrete preferred embodiment, described P raceway groove quantum dot light emitting field-effect transistor is except comprising described grid 1, insulating barrier 2, source electrode 3, carbon nanotube layer 4, semiconductor layer 5, quantum dot light emitting layer 8 and drain electrode 11, also comprise hole injection layer 6, hole transmission layer 7, electron transfer layer 9 and electron injecting layer 10, and described hole injection layer 6, hole transmission layer 7 are cascading on described semiconductor layer 5, described electron transfer layer 9 and electron injecting layer 10 are cascading on described quantum dot light emitting layer 8, as shown in Figure 3.Wherein, described semiconductor layer 5 is P type semiconductor material layer, and described source electrode 3 is made up of anode material, and described drain electrode 11, described grid 1 are made up of cathode material.
In preferred described P raceway groove quantum dot light emitting field-effect transistor, described source electrode 3 (anode) ground connection, to described grid 1 one negative potentials, under the effect of described grid 1 and source electrode 3 voltage (generating positive and negative voltage), described semiconductor layer 5 can induce a P-type conduction raceway groove, and in raceway groove, hole is majority carrier; Simultaneously, also negative potential is added to described drain electrode 11 (negative electrode), under the effect of source electrode 3 with drain electrode 11 voltages (generating positive and negative voltage), hole in raceway groove and described drain electrode 11 (negative electrode) injected electrons are injected in described quantum dot light emitting layer 8 by respectively by described hole injection layer 6 and described electron injecting layer 7, when electronics and hole are luminous by the mode of radiation recombination after described quantum dot light emitting layer 8 meets.The described P raceway groove quantum dot light emitting field-effect transistor that the embodiment of the present invention provides, in the process of luminescence, the key parameters such as the luminosity of device both can be controlled by the size of described grid 1 voltage, also can by described source electrode 3 (anode), described drain electrode 11 (negative electrode) voltage control, thus the injection of charge carrier (hole and electronics) can be controlled better, improve the balance of charge carrier, and then improve the performance of device.
As another concrete preferred embodiment, described N raceway groove quantum dot light emitting field-effect transistor is except comprising described grid 1, insulating barrier 2, source electrode 3, carbon nanotube layer 4, semiconductor layer 5, quantum dot light emitting layer 8 and drain electrode 11, also comprise hole injection layer 6, hole transmission layer 7, electron transfer layer 9 and electron injecting layer 10, and described electron injecting layer 9, electron transfer layer 10 are cascading on described semiconductor layer 5, described hole transmission layer 6 and hole injection layer 7 are cascading on described quantum dot light emitting layer 8, as shown in Figure 4.Wherein, described semiconductor layer 5 is N type semiconductor material, and described source electrode 3 is made up of cathode material, and described drain electrode 11, described grid 1 are made up of anode material.
Similar to described P raceway groove quantum dot light emitting field-effect transistor, described N raceway groove quantum dot light emitting field-effect transistor equally can by the injection regulating described grid 1 voltage, described source electrode 3 (negative electrode) and described drain electrode 11 (anode) voltage to control charge carrier (hole and electronics) better, improve the balance of charge carrier, and then improve the performance of device.In addition, because the stability of described N type semiconductor material is better, therefore, described in the embodiment of the present invention, N raceway groove quantum dot light emitting field-effect transistor has more stable performance.
Concrete, in the embodiment of the present invention, also comprise the substrate (not marking in figure) for depositing described grid 1, described substrate selects hard substrates.As specific embodiment, described substrate selects glass substrate.
Described grid 1, according to the difference of P raceway groove quantum dot light emitting field-effect transistor and N raceway groove quantum dot light emitting field-effect transistor, can select different materials.In described P raceway groove quantum dot light emitting field-effect transistor, described grid 1 can select the metal material of low work function, specifically can be the metals such as Mg, Al, is preferably the ITO of patterning; In described N raceway groove quantum dot light emitting field-effect transistor, described grid 1 selects the metal material of high work function.In the embodiment of the present invention, described grid 1 comprises grid layer (unmarked in figure) and protrudes formation grid boss 101 in grid layer side.As a specific embodiment, described grid boss 101 and described grid layer (i.e. grid 1) can adopt identical material; As another specific embodiment, described grid boss 101 and described grid layer also can adopt different materials, as as described in P raceway groove quantum dot light emitting field-effect transistor, described grid layer adopts the ITO electrode of patterning, and described grid boss 101 adopts the metals such as Mg, Al.
In the embodiment of the present invention, preferably, described insulating barrier 2 material selection has good insulating properties and the material of light transmission.On the one hand, the insulating material with larger dielectric constant (insulating properties is better) can induce more charge carrier in channels; On the other hand, good light transmission, can ensure that the photon produced in QLED can penetrate device through described insulating barrier 2.As a preferred embodiment, the dielectric constant > 5 of described insulating barrier.As another preferred embodiment, the light transmission > 70% of described insulating barrier.Of course it is to be understood that above-mentioned two preferred embodiments can be present in same embodiment simultaneously, obtain more excellent specific embodiment.In addition, owing to described insulating barrier 2 also needing deposition other materials layer, in order to obtain the smooth other materials layer film of even compact, further, described insulating barrier 2 material preferably has the insulating material of good filming characteristic.As concrete preferred embodiment, the material of described insulating barrier 2 is at least one in silica, aluminium oxide, hafnium oxide, tantalum oxide, further, the material selection dielectric constant of described insulating barrier 2 up to 25 hafnium oxide, and the thickness of described hafnium oxide is 20-30nm.
Described source electrode 3, according to the difference of P raceway groove quantum dot light emitting field-effect transistor and N raceway groove quantum dot light emitting field-effect transistor, can select different materials.In described P raceway groove quantum dot light emitting field-effect transistor, described source electrode 3 can select the metal material of high work function, specifically can be the metals such as Au, Cr, Pt; In described N raceway groove quantum dot light emitting field-effect transistor, described source electrode 3 selects the metal material of low work function.
In the embodiment of the present invention, described carbon nano-tube 4 is the hole conducting communication passages between described source electrode 3 and described semiconductor layer 5.The setting of described carbon nano-tube 4, effectively increases the area of hole transport, thus improves hole transport rate.
In the embodiment of the present invention, the material of described semiconductor layer 5 is unrestricted, can select traditional electrodeless field-effect transistor materials, as amorphous silicon hydride, polysilicon, metal oxide, high mobility organic (polymer) semiconductor etc.In order to prevent carbon nano-tube 4 from causing luminous component short circuit, as preferred embodiment, the thickness G reatT.GreaT.GT 500nm of described semiconductor layer 5.
Described hole injection layer 6 can select conventional hole-injecting material preparation.As specific embodiment, the material of described hole injection layer 6 can be PEDOT:PSS, also can be that other has the hole injection layer material of high work function, high conductivity, as Mo
xo
yand W
xo
y.
Described hole transmission layer 7 can select the hole transport layer material of this area routine to prepare.As specific embodiment, the material of described hole transmission layer 7 can use the common at least one had in PVK, Poly-TPD, TFB of darker HOMO energy level, also can be other high performance hole mobile material.
The material selection of described quantum dot light emitting layer 8 is unrestricted.As preferred embodiment, the quantum dot in described quantum dot light emitting layer 8 can be II-IV compound semiconductor, as CdS or CdSe or CdS/ZnS or CdSe/ZnS or CdSe/CdS/ZnS; Can also be III-V or group IV-VI compound semiconductor, as GaAs or InP and PbS/ZnS or PbSe/ZnS, and the semiconductor nano such as I-III-VI2 race.Described in the embodiment of the present invention, the thickness of quantum dot light emitting layer 8 is preferably 10-100nm.
Electron transfer layer 9 described in the embodiment of the present invention and described electron injecting layer 10 can adopt the electron transport material of this area routine and electron injection material to prepare respectively.As specific embodiment, the material of described electron transfer layer 9 includes but not limited to the N-shaped zinc oxide (ZnO) with high electronic transmission performance; Described electron injecting layer 10 can be the metals such as Ca, Ba of low work function, also can select CsF, LiF, CsCO
3deng compound, can also be other Electrolyte type electron transport layer materials, as PEIE, PEI etc.
Described drain electrode 11, according to the difference of P raceway groove quantum dot light emitting field-effect transistor and N raceway groove quantum dot light emitting field-effect transistor, can select different materials.In described P raceway groove quantum dot light emitting field-effect transistor, described drain electrode 11 can select the metal material of low work function, specifically can be the metals such as Mg, Al; In described N raceway groove quantum dot light emitting field-effect transistor, the metal material of high work function is selected in described drain electrode 11.
The quantum dot light emitting field-effect transistor that the embodiment of the present invention provides, QLED luminescence and organic field effect tube are controlled two functions to be concentrated on a device (quantum dot light emitting field-effect transistor), the number of charge carrier in raceway groove can be regulated and controled by adjustment grid voltage size, and then the electroluminescence in control QLED.Concrete, on the one hand, by the cooperation regulation and control between grid voltage and source, drain voltage, can make can produce a large amount of holes in conducting channel, thus be conducive to the energy barrier that overcomes between hole transmission layer and quantum dot light emitting layer, promote the luminous efficiency of QLED, extend the useful life of device.
On the other hand, in quantum dot light emitting field-effect transistor described in the embodiment of the present invention, electronics and hole are luminous by radiation recombination after quantum dot light emitting layer meets, in the process of luminescence, the key parameters such as the luminosity of device both can be controlled by the size of grid voltage, also can be controlled by source, drain voltage.Thus can the injection of charge carrier in control QLED better, improve the balance of charge carrier, and then improve the performance of device.
In addition, the quantum dot light emitting field-effect transistor that the embodiment of the present invention provides, by luminous and control two functions concentrate on a device simplifies device preparation flow, reduce production cost, and decrease the consumption of energy, improve capacity usage ratio.
Quantum dot light emitting field-effect transistor described in the embodiment of the present invention can be prepared by following method.
And, embodiments provide a kind of preparation method of quantum dot light emitting field-effect transistor, comprise the following steps:
S01. provide a grid, and described grid protrudes formation grid boss in side;
S02. depositing insulating layer on described grid;
S03. relative with described grid boss on described insulating barrier side deposits source electrode;
S04. on described insulating barrier, deposit the carbon nanotube layer that one deck is connected with described source electrode;
S05. depositing semiconductor layers, quantum dot light emitting layer and drain electrode successively on described carbon nanotube layer.
Concrete, in above-mentioned steps S01, described grid can for being deposited on the grid in hard substrates, as ITO electrode.Wherein described, selecting of described hard substrates is unrestricted, can adopt the hard carrier used in conventional preparation QLED.As specific embodiment, described hard carrier is glass substrate.In the embodiment of the present invention, described grid comprises grid layer and gives prominence to the grid boss of formation in grid layer side.
Further, described grid can be carried out clean, described clean can adopt the clean mode of this area routine to realize.As a specific embodiment, the method of described clean is: be immersed in successively in acetone, washing lotion, deionized water and isopropyl alcohol by described grid and carry out Ultrasonic Cleaning to it, each ultrasonic cleaning time is no less than 15 minutes, after cleaning terminates takes out described hard substrates as drying for standby in clean baking oven.
In above-mentioned steps S02, on described grid, the mode of depositing insulating layer is unrestricted, includes but not limited to magnetron sputtering method, chemical vapour deposition technique, atomic layer deposition method, pulsed laser deposition and anode oxidation method etc.As a specific embodiment, described grid can be placed in 5 × 10 by described insulating barrier
-3in the high-purity argon gas atmosphere of mbar, carry out magnetron sputtering acquisition with the speed of 2 dusts/second.
In above-mentioned steps S03, the mode that described source electrode can adopt heat just spending deposits realization.As a specific embodiment, will deposit by the grid substrate of described insulating barrier as in Vacuum Deposition storehouse, (air pressure is less than 10 under a high vacuum
-6mbar) with the mode evaporation source electrode of hot evaporation.
In above-mentioned steps S04, described insulating barrier deposits the carbon nanotube layer that one deck is connected with described source electrode can be realized by the mode shifted.
In above-mentioned steps S04, depositing semiconductor layers, quantum dot light emitting layer and drain electrode successively on described carbon nanotube layer, wherein, described semiconductor layer can be, but not limited to be realized by method depositions such as hot evaporation, magnetron sputtering, atomic deposition or solution processing.Described quantum dot light emitting layer can adopt conventional method to realize, as spin coating, inkjet printing etc.After having deposited described quantum dot light emitting layer, remove solvent residual in described quantum dot light emitting layer preferably by heat treatment mode, thus obtain fine and close quantum dot light emitting layer film.Preferably, described heat treatment method for heat 5-15min at 70-100 DEG C of temperature, concrete, and described heat treatment method for heat 10min at 80 DEG C of temperature.Described drain electrode can adopt hot evaporation mode to realize, concrete, in vacuum environment (as Vacuum Deposition storehouse), by the hot evaporation drain electrode of mask plate.
As preferred embodiment, described quantum dot light emitting field-effect transistor also comprises at least one deck in deposition of hole implanted layer, hole transmission layer, electron transfer layer and electron injection one functional layer.The setting of described hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer and depositional mode are this area usual manner, as as described in hole injection layer and/or hole transmission layer be arranged on anode and as described between quantum dot light emitting layer, described electron transfer layer and/or electron injecting layer are arranged between negative electrode and described quantum dot light emitting layer.After having deposited above-mentioned each functional layer, also comprise and respectively removal solvent has been heat-treated to each functional layer, to obtain fine and close functional layer.In addition, as preferred embodiment, the deposition of described hole transmission layer, according to the difference of solvent property, optionally can carry out in air or nitrogen atmosphere protection.
The preparation method of the quantum dot light emitting field-effect transistor that the embodiment of the present invention provides, QLED luminescence and organic field effect tube are controlled two functions to be concentrated on a device (quantum dot light emitting field-effect transistor), with originally prepare QLED respectively and organic field effect tube compares, significantly simplify the preparation flow of device, reduce production cost, and decrease the consumption of energy, improve capacity usage ratio.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a quantum dot light emitting field-effect transistor, is characterized in that, comprises a grid, and described grid protrudes in side and forms grid boss;
Be arranged on the insulating barrier on described grid, and described insulating barrier does not contact with described grid boss;
Be arranged on the source electrode of side relative with described grid boss on described insulating barrier;
Be arranged on the carbon nanotube layer that described insulating barrier is connected with described source electrode;
Be arranged on the semiconductor layer on described carbon nanotube layer, and described semiconductor layer not with described source contact;
And the quantum dot light emitting layer be cascading on described semiconductor layer and drain electrode.
2. quantum dot light emitting field-effect transistor as claimed in claim 1, it is characterized in that, the material of described semiconductor layer is P type semiconductor material or N type semiconductor material.
3. quantum dot light emitting field-effect transistor as claimed in claim 1, it is characterized in that, described quantum dot light emitting field-effect transistor also comprises at least one deck in hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer.
4. quantum dot light emitting field-effect transistor as claimed in claim 2, it is characterized in that, described quantum dot light emitting field-effect transistor also comprises hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer, and described hole injection layer, hole transmission layer are cascading on described semiconductor layer, described electron transfer layer and electron injecting layer are cascading on described quantum dot light emitting layer
Wherein, described semiconductor layer is P type semiconductor material layer, and described source electrode is made up of anode material, and described drain electrode, described grid are made up of cathode material.
5. quantum dot light emitting field-effect transistor as claimed in claim 2, it is characterized in that, described quantum dot light emitting field-effect transistor also comprises hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer, and described electron injecting layer, electron transfer layer are cascading on described semiconductor layer, described hole transmission layer and hole injection layer are cascading on described quantum dot light emitting layer
Wherein, described semiconductor layer is N type semiconductor material, and described source electrode is made up of cathode material, and described drain electrode, described grid are made up of anode material.
6. the quantum dot light emitting field-effect transistor as described in as arbitrary in claim 1-5, is characterized in that, the dielectric constant > 5 of described insulating barrier; And/or
The light transmission > 70% of described insulating barrier.
7. quantum dot light emitting field-effect transistor as claimed in claim 6, it is characterized in that, the material of described insulating barrier is at least one in silica, aluminium oxide, hafnium oxide, tantalum oxide.
8. the quantum dot light emitting field-effect transistor as described in as arbitrary in claim 1-5, is characterized in that, the thickness G reatT.GreaT.GT 500nm of described semiconductor layer.
9. a preparation method for quantum dot light emitting field-effect transistor as described in as arbitrary in claim 1-8, comprises the following steps:
There is provided a grid, and described grid protrudes formation grid boss in side;
Depositing insulating layer on described grid;
Side relative with described grid boss on described insulating barrier deposits source electrode;
Described insulating barrier deposits the carbon nanotube layer that one deck is connected with described source electrode;
Depositing semiconductor layers, quantum dot light emitting layer and drain electrode successively on described carbon nanotube layer.
10. the preparation method of quantum dot light emitting field-effect transistor as claimed in claim 9, is characterized in that, also comprise at least one deck in deposition of hole implanted layer, hole transmission layer, electron transfer layer and electron injecting layer.
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| CN108987600A (en) * | 2018-07-20 | 2018-12-11 | 福州大学 | A kind of vertical structure light-emitting transistor and preparation method thereof based on quantum dot |
| CN109524564A (en) * | 2018-11-23 | 2019-03-26 | 合肥鑫晟光电科技有限公司 | A kind of organic light-emitting transistor, temp-sensing device and its temperature testing method |
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