CN106158743A - Utilize the manufacture method of the sensor of many inducing pixels detection multiple gases - Google Patents
Utilize the manufacture method of the sensor of many inducing pixels detection multiple gases Download PDFInfo
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- CN106158743A CN106158743A CN201610339414.6A CN201610339414A CN106158743A CN 106158743 A CN106158743 A CN 106158743A CN 201610339414 A CN201610339414 A CN 201610339414A CN 106158743 A CN106158743 A CN 106158743A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
Abstract
The invention provides the manufacture method of a kind of sensor utilizing many inducing pixels detection multiple gases, comprise the steps: step S1: produce multiple heating resistor layer at silicon chip (1)；Step S2: form multiple gas sensing resistance of different nature, or many inducing pixels on described heating resistor layer；Step S3: carry out vacuum bakeout；Step S4: process gas sensing electrode contact hole and resistive layers make contact hole (14) for heating resistor layer and gas sensing resistance, at gas sensing electrode contact hole and resistive layers make contact hole (14) upper welding electrode lead-in wire.Step S5: utilize gas with various in the unique trait of different gas sensing resistances or " fingerprint ", the kind of detected gas and concentration.Manufacturing cost is relatively low: the method for the present invention uses the standard technology generally used in integrated circuit fabrication, it is to avoid use unconventional MEMS technology, therefore can reduce manufacturing cost, strengthens productibility.
Description
Technical field
The present invention relates to semiconductor manufacturing, in particular it relates to a kind of sensing utilizing many inducing pixels detection multiple gases
The manufacture method of device.
Background technology
With the sensor of metal-oxide detected gas the most studied many time, relevant patent also have application and authorize.
But, relevant technology can only detect a certain class gas within the same period.If detect certain specific gas, or multiple
Gas, it is necessary to use multiple different gas sensor, or in the different periods, same sensor is applied different heating
Signal detects different gas.These methods are due to the response signal overlap of gas with various so that certainty of measurement and gas divide
Resolution is poor, and the detection time is long, and cost is high, and power consumption and volume are big, and the amount of gas that can detect is limited.
The quality of environment and the live and work comfort level of people, healthy closely bound up.In recent years, along with people are to ring
The requirement in border is more and more higher, it is desirable to simple and reliable, low-cost method and the quality of Product checking surrounding air,
Such as carbon monoxide, imflammable gas, ethanol, NO2Deng discomfort or the aerial content of toxic gas.But, relevant
Technology can only detect a certain class gas within the same period.If multiple gases to be detected, it is necessary to use different sensors,
Or detect different gas at same sensor at different periods.The obvious cost of former approach is high, and power consumption volume is big.After
A kind of method testing time is long, and selectivity or gas differentiate rate variance, and the amount of gas that can detect is limited.
The such as patent application of application number 200710054450.9, is metal-oxide to be done by thick-film technique about one
The manufacture method of the sensor on potsherd, its shortcoming is that volume is big, and power consumption is high, and cost is high, poor repeatability etc., and can only
Detect a certain class gas, such as organic volatile gas, it is impossible to differentiating more specifically gas componant, gas resolution is poor..
The most such as patent application of application number CN201410397034.9, is to manufacture metal about one by the technique of MEMS
The manufacture method of oxide sensor.One of them shortcoming is that it can only detect a certain class gas, such as organic volatile gas, no
Can differentiate more specifically gas componant, gas resolution is poor.Additionally MEMS technology is non-traditional semiconductor technology, cost
Height, the stability of technique, reliability is poor.
The most such as patent application of application number CN20060000915.6, is several metal-oxide systems by thick-film technique
The manufacture method of work sensor on potsherd, although the method also uses multiple sensing unit, but because is to use thick film work
Skill makes on potsherd, and volume is big, and power consumption is high, and cost is high, and poor repeatability, precision is poor.
The method of the present invention uses traditional semiconductor process technique the film heating resistance of nanometer scale, film metal
Fin and multiple different thin-film metallic oxide gas sensing resistance are made on same silicon chip, produce multiple to difference simultaneously
The sensing unit that gas sensitization degree is different, or inducing pixel.Utilize gas with various at the different qualities of each inducing pixel, or
" fingerprint ", can the simultaneously accurately kind of detected gas and concentration, improve measurement sensitivity and the gas resolution of product, increase
Reliability and concordance.The method of the present invention uses pulse quickly to heat, and uses fin fast cooling, it is to avoid use MEMS work
Skill, it is possible to reduce the cost of product, volume and power consumption.
Summary of the invention
For defect of the prior art, it is an object of the invention to provide one and utilize many inducing pixels to detect multiple gases
The manufacture method of sensor.
According to the manufacture method of the sensor utilizing many inducing pixels detection multiple gases that the present invention provides, including as follows
Step:
Step S1: produce multiple heating resistor layer at silicon chip；
Step S2: form multiple gas sensing resistance of different nature on described heating resistor layer；
Step S3: carry out vacuum bakeout；
Step S4: process gas sensing electrode contact hole and resistive layers make contact hole for heating resistor layer and gas sensing resistance, at gas
Welding electrode lead-in wire on quick electrode contact hole and resistive layers make contact hole.
Preferably, described step S1 comprises the steps:
Step S101: deposit ground floor silicon oxide sio on silicon chip2Thin film；
Step S102: at ground floor silicon oxide sio2First layer metal thin film is deposited on thin film；
Step S103: carve multiple heating resistor layer at first layer metal thin film.
Preferably, described step S2 comprises the steps
Step S201: deposit one layer of silicon nitride film on first layer metal thin film；
Step S202: etch nitride silicon thin film, outputs the first contact hole, and it is thin that the first contact holes exposing goes out first layer metal
Film；
Step S203: deposit second layer metal thin film on silicon nitride film, second layer metal thin film is by the first contact
Hole is connected with first layer metal thin film；
Step S204: deposit third layer metallic film on second layer metal thin film；
Step S205: etch the first groove at the 3rd metallic film, the bottom land of the first groove is second layer metal thin film；
Step S206: in the first groove, second layer metal thin film is etched the second groove, the bottom land of the second groove is
On silicon nitride film；
Step S207: deposit second layer silicon oxide sio on second layer metal thin film and third layer metallic film2Thin film；
Step S208: at second layer silicon oxide sio2Coating photoresist on thin film, makes second in the second groove by lithography and connects
Contact hole, and etch away the second layer silicon oxide sio under the second contact hole2Thin film；
Step S209: deposit metal-oxide film on a photoresist with the second contact hole；
Step S210: removal photoresist is with the metal-oxide film above stripping photoresist, on described second contact hole
Gas-sensitive metal sull form a gas sensing resistance, the two ends of described gas sensing resistance are respectively by second layer metal thin film even
Receive third layer metallic film.
Preferably, repeat step S208 to step S210 and form multiple different gas sensing resistance.
Preferably, in described step S3, baking temperature is between 300 DEG C to 500 DEG C, baking time be 10 minutes little to 4
Time between.
Preferably, described step S4 comprises the steps:
Step S401: etching of second layer silicon oxide sio2Thin film forms gas sensing electrode contact hole respectively in gas sensing resistance both sides
Third layer metallic film is exposed with resistive layers make contact hole, gas sensing electrode contact hole and resistive layers make contact hole；
Step S402: welding electrode lead-in wire on gas sensing electrode contact hole and resistive layers make contact hole.
Preferably, ground floor silicon oxide sio2The thickness of thin film is that 200 nanometers are to 2 microns；
The thickness of first layer metal thin film is that 200 nanometers are to 1 micron；
The thickness of silicon nitride film is that 10 nanometers are to 200 nanometers；
The thickness of second layer metal thin film is that 100 nanometers are to 1 micron；
The thickness of third layer metallic film is that 200 nanometers are to 3 microns；
Second layer silicon oxide sio2The thickness of thin film is that 50 nanometers are to 500 nanometers；
The thickness of photoresist is that 500 nanometers are to 2 microns；
The thickness of metal-oxide film in 100 nanometers to 800 nanometers.
Preferably, described heating resistor layer includes heating region and heat dissipation region；Described heat dissipation region passes through the second metal
Thin film connects third layer metallic film
Preferably, described heating region is elongated；Described heat dissipation region is interdigitated.
Preferably, described first layer metal thin film and second layer metal thin film are adopted as tungsten or tungsten-titanium alloy is made；
Third layer metallic film uses metallic aluminium or aluminium copper to make；
Described metal-oxide film uses SnO2、ZnO、TiO2Make, or use the gas through Fe, Zn, Pt or Pd doping
Quick material is made.
Preferably, also include step S5, described step S5 particularly as follows:
Utilize gas with various in the unique trait of different gas sensing resistances or " fingerprint ", the kind of detected gas and concentration.
Compared with prior art, the present invention has a following beneficial effect:
1, the present invention utilizes the semiconductor process technique of traditional low cost to produce gas sensing resistance on the silicon chip of standard,
The structure of gas sensing resistance includes metal heating thin films, metal fin, multiple nano-metal-oxide thin film etc.；By to heating
Film resistor applies pulse and quickly heats neighbouring metal-oxide gas sensing resistance, encourages the resistance of this oxide to change,
Then quickly cool down this resistance further through heat radiation thin film, form resistance value impulse response signal, this resistance value impulse response signal
Shape, amplitude, response characteristic is affected by its environmental gas.By analyzing this resistance value pulse, the arteries and veins of contrast clean air
Rush signal, thus accurately detect composition and the concentration of environmental gas；
2, manufacturing cost is relatively low: the method for the present invention uses the standard technology generally used in integrated circuit fabrication, keeps away
Exempt to use unconventional MEMS technology, therefore can reduce manufacturing cost, strengthen productibility；
3, the present invention can enhance product performance concordance and reliability；
4, the present invention produce multiple gas sensing " pixel " unit, by by each pixel of the methods analyst of software
The change of resistance value impulse response signal, that can improve product measures sensitivity and the resolution of gas；
5, the present invention is because using multiple different gas sensing resistances to detect, and can improve the resolution of gas and measure essence
Degree.
Accompanying drawing explanation
By the detailed description non-limiting example made with reference to the following drawings of reading, the further feature of the present invention,
Purpose and advantage will become more apparent upon:
Fig. 1 to Figure 13 is the manufacture process schematic diagram of the present invention；
Figure 14 is the surfacial pattern schematic diagram after manufacture of the present invention completes；
Figure 15 is the surfacial pattern schematic diagram of Fig. 2 of the present invention；
Figure 16 is the surfacial pattern schematic diagram of Fig. 5 of the present invention；
Figure 17 is the schematic equivalent circuit of the present invention；
Figure 18, Figure 19 are the etection theory schematic diagram of the present invention.
In figure:
1 is silicon chip；
2 is ground floor silicon oxide sio2Thin film；
3 is first layer metal thin film；
4 is silicon nitride film；
5 is second layer metal thin film；
6 is third layer metallic film；
7 is the first contact hole；
8 is the first groove；
9 is the second groove；
10 is second layer silicon oxide sio2Thin film；
111,112,113 it is photoresist
121 is the second contact hole；
122 is the 3rd contact hole；
123 is the 4th contact hole；
131,132,133 it is different metal-oxide films；
14 is resistive layers make contact hole；
151,152,153,154 is the contact conductor of single sensing unit.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is described in detail.Following example will assist in the technology of this area
Personnel are further appreciated by the present invention, but limit the present invention the most in any form.It should be pointed out that, the ordinary skill to this area
For personnel, without departing from the inventive concept of the premise, it is also possible to make some deformation and improvement.These broadly fall into the present invention
Protection domain.
In the present embodiment, what the present invention provided utilizes the manufacturer of the sensor of many inducing pixels detection multiple gases
Method, comprises the steps:
Step S1: produce heating resistor layer at silicon chip 1；Described silicon chip 1 uses the industrial silicon chip of standard semiconductor, permissible
It is 4 inches, 6 inches, 8 inches or 12 inch silicon wafer, can be p-shaped silicon chip, it is also possible to be N shape silicon chip；
Step S2: form gas sensing resistance on described heating resistor layer；
Step S3: carry out vacuum bakeout；
Step S4: process gas sensing electrode contact hole and resistive layers make contact hole 14 for heating resistor layer and gas sensing resistance,
Welding electrode lead-in wire on gas sensing electrode contact hole and resistive layers make contact hole 14.
Described step S1 comprises the steps:
Step S101: deposit ground floor silicon oxide sio on silicon chip 12Thin film 2；It is specially the quasiconductor work of employing standard
The method deposit ground floor silicon oxide sio of skill PECVD2Thin film；
Step S102: at ground floor silicon oxide sio2Standard semi-conductor processes PVD is used to deposit first layer metal on thin film 2
Thin film 3；
Step S103: carve multiple heating resistor layer at first layer metal thin film 3.As in figure 2 it is shown, the figure of heating resistor layer
Shape can be strip at resistance region or heating region, and in non-resistive region or non-heated region, or heat dissipation region is fabricated to
Interdigitated, as shown in figure 14, the metallic resistance value of strip is between 20 ohm to 200 ohm；First layer metal thin film is non-
Heating region area is relatively big, and is connected with top layer second layer metal thin film, third layer layer metallic film, plays heat sinking function.When
When heating driving pulse applies, resistance region resistance is brought rapidly up more greatly.After heating driving pulse disappears, heat is by periphery
The metal in non-resistive region distributes rapidly, makes temperature recover room temperature as early as possible.
Described step S2 comprises the steps
Step S201: use standard PECVD process to deposit one layer of silicon nitride film 4 on first layer metal thin film 3；Nitridation
The thickness of silicon thin film 4 is thin enough, strengthens heats, but also sufficiently thick so that first layer metal thin film, second layer metal
Enough electric isolution are had between thin film.
Step S202: with standard semiconductor dry etching etch nitride silicon thin film 4, output the first contact hole 7, the first contact
Hole 7 exposes first layer metal thin film 3；
Step S203: deposit second layer metal thin film 5 on silicon nitride film 4, second layer metal thin film 5 connects by first
Contact hole 7 is connected with first layer metal thin film 3；
Step S204: deposit third layer metallic film 6 on second layer metal thin film 5；This third layer metallic film 6 is complete
Cover following second layer metal thin film 5, and in electricity meaning, connect second layer metal thin film 5.When adding thermal excitation letter
Number time, second layer metal thin film 5, third layer metallic film 6 play the effect of low-resistance line so that add thermal resistance and obtain major part
Energy, and be rapidly heated.
Step S205: using standard semiconductor to be dry-etched in the 3rd metallic film 6 and etch the first groove 8, first is recessed
The bottom land of groove 8 is second layer metal thin film 5；So etching needs that the second metal layer thin film 5 is had preferable selectivity.
Step S206: use standard semiconductor to be dry-etched in the first groove 8 and second layer metal thin film 5 is etched the
Two grooves 9, the bottom land of the second groove 9 is on silicon nitride film 4；After removing photoresist, portion of second layer metallic film 5 is with whole
Third layer metallic film 6 is exposed out, as shown in Figure 4；The figure of second layer metal thin film 5 can be interdigitated, such as Figure 16 institute
Showing, left right graphic is not connected to, and it is using the two end electrodes as subsequent metal oxide resistor.
Step S207: deposit second layer silicon oxide sio on second layer metal thin film 5 and third layer metallic film 62Thin film
10；Second layer silicon oxide sio2Thin film 10 is completely covered third layer metallic film 6, prevents metal afterwards as passivation protection layer
Application in by environmental attack, improve the reliability of device.
Step S208: at second layer silicon oxide sio2Coating photoresist 111 on thin film 10, makes by lithography in the second groove 9
Second contact hole 121, and utilize the second layer oxidation that standard semiconductor dry or wet technique etches away under the second contact hole 121
Silicon SiO2Thin film 10；Prepare for follow-up metal-oxide deposit 131 and stripping technology.Photoresist thickness is in 500 nanometers to 2
Between Wei meter.Etching stopping is on SiN layer.
Step S209: and deposit the first metal-oxide film 131 on the second contact hole 121 on photoresist 111；
Step S210: use solvent to remove photoresist 111 thin with the first metal-oxide above stripping photoresist 111
Film 131, the gas-sensitive metal sull 131 on described second contact hole 121 forms first gas sensing resistance, described first
The two ends of gas sensing resistance are connected to third layer metallic film 6 by second layer metal thin film 5 respectively.This is first gas sensing resistance
" pixel ", as shown in Figure 8.
Repeat step S208 to step S210 and form multiple different gas sensing resistance.Particularly as follows:
Step A1: coating photoresist 112, does the 6th photoetching, makes the 3rd contact hole 122.
Step A2: utilize standard semiconductor dry or wet technique, the second layer silicon oxide under etching the 3rd contact hole 122
SiO2Thin film 10, prepares for follow-up metal-oxide film 132 deposit and stripping technology.Photoresist thickness is in 500 nanometers
Between 2 microns.Etching stopping is on SiN layer.
Step A3: depositing the second metal-oxide film 132 by the method for PVD on photoresist 112, thickness exists
Between 100 nanometers to 800 nanometers, material can be SnO2, ZnO, TiO2Deng gas sensitive, or through elements such as Fe, Zn, Pt, Pd
This type of gas sensitive mixed.As shown in Figure 9.
Step A4: using solvent that photoresist 112 is removed, the second metal-oxide above stripping photoresist is thin simultaneously
Film, the gas-sensitive metal sull stayed covers the 3rd contact hole 122, forms second gas sensing resistance, the two ends of resistance
Connect second metal layer thin film 5 the two poles of the earth, be then connected to third layer metallic film 6.This is second gas sensing resistance " pixel ",
As shown in Figure 10.
Step B1: coating photoresist 113, does the 7th photoetching, makes the 4th contact hole 123.
Step B2: utilize standard semiconductor dry or wet technique, the second layer silicon oxide under etching the 4th contact 123
SiO2Thin film 10, prepares for follow-up metal-oxide film 133 deposit and stripping technology.Photoresist thickness is in 500 nanometers
Between 2 microns.Etching stopping is on SiN layer.
Step B3: depositing the third metal-oxide film 133 by the method for PVD on photoresist 113, thickness exists
Between 100 nanometers to 800 nanometers, material can be SnO2, ZnO, TiO2Deng gas sensitive, or through units such as Fe, Zn, Pt, Pd
This type of gas sensitive that element mixes, as shown in figure 11.
Step B4: using solvent that photoresist 113 is removed, the third metal-oxide above stripping photoresist is thin simultaneously
Film, the gas-sensitive metal sull stayed covers the 4th contact hole 123, forms a gas sensing resistance, and the two ends of resistance are even
Connect second metal layer thin film 5 the two poles of the earth, be then connected to third layer metallic film 6.This is the 3rd gas sensing resistance " pixel ".
In described step S3, baking temperature is between 300 DEG C to 500 DEG C, and baking time is between 10 minutes to 4 hours,
Metal-oxide film crystallization is made to form the gas sensing resistance of required stability characteristic (quality).During baking, the 3rd metal layer thin film 6 is by second
Layer silicon oxide sio2The protection of thin film 10.
Described step S4 comprises the steps:
Step S401: etching of second layer silicon oxide sio2Thin film 10 forms gas sensing electrode contact respectively in gas sensing resistance both sides
Hole and resistive layers make contact hole 14, gas sensing electrode contact hole and resistive layers make contact hole 14 expose third layer metallic film 6；
Step S402: welding electrode lead-in wire on gas sensing electrode contact hole and resistive layers make contact hole 14.
Ground floor silicon oxide sio2The thickness of thin film 2 is that 200 nanometers are to 2 microns；
The thickness of first layer metal thin film 3 is that 200 nanometers are to 1 micron；
The thickness of silicon nitride film 4 is that 10 nanometers are to 200 nanometers；
The thickness of second layer metal thin film 5 is that 100 nanometers are to 1 micron；
The thickness of third layer metallic film 6 is that 200 nanometers are to 3 microns；
Second layer silicon oxide sio2The thickness of thin film 10 is that 50 nanometers are to 500 nanometers；
The thickness of photoresist 111 is that 500 nanometers are to 2 microns；
The thickness of metal-oxide film 131 in 100 nanometers to 800 nanometers.
Described heating resistor layer includes heating region and heat dissipation region；Described heat dissipation region is by the second metallic film 5 even
Connect third layer metallic film 6
Described heating region is elongated；Described heat dissipation region is interdigitated.
Described first layer metal thin film 3 and second layer metal thin film 5 are adopted as tungsten or tungsten-titanium alloy is made；Third layer
Metallic film 6 uses metallic aluminium or aluminium copper to make；
Described metal-oxide film 131 uses SnO2、ZnO、TiO2Make, or use through Fe, Zn, Pt or Pd doping
Gas sensitive make.
By standard metal copper or the two end electrodes of each gas sensing resistance of gold solder bundle of lines of semiconductor-sealing-purpose and add thermoelectricity
The two end electrodes of resistance layer is connected in encapsulation, and totally three four end air-sensitive sensing units or " pixel " complete.As described in Figure 13.If
Need to make the air-sensitive sensing unit of more than three or " pixel ", above process can be repeated.
The figure of the most single air-sensitive sensing unit or " pixel " as described in Figure 14,
The equivalent circuit diagram of single gas sensing resistance structure is as shown in figure 17.Wherein Rh be equivalence add thermal resistance, Rg is
Effect gas sensing resistance.This structure is after connecting upper suitable outer meeting resistance R and suitable supply voltage Vdd, and output voltage Vg is anti-
Reflect the resistance of gas sensing resistance.Vh is applied to add the pulse voltage signal of thermal resistance.
The operation principle of gas sensing resistance such as Figure 17 in the present invention, shown in 18,19.Vh, as a pumping signal, works as applying
When one short pulse rushes, such as Figure 19, add thermal resistance and generate heat rapidly.Because of gas sensing resistance in the above, centre is only separated by the thinnest nitrogen
SiClx thin film 4, therefore gas sensing resistance also follows intensification, such as Figure 18.Along with temperature raises, absorption is on metal-oxide film surface
Negative oxygen ion increases sharply, and forms depletion layer on metal-oxide film surface so that it is resistivity rises with temperature and rises.
After the driving voltage pulse of heating metallic resistance disappears, temperature declines, and the negative oxygen ion of absorption reduces, metal-oxide film
Resistivity recover initial value.Therefore, Vh may be considered driving source, and Vg (Rg) is as response impulse.Amplitude when pumping signal
When fixing with the time, if air is pure without other harmful gass, the amplitude of this response impulse and shape are fixing.As
A figure in Figure 18.But, when in air containing a certain amount of reducibility gas, such as CO, H2Organic with other volatility
Thing gas such as ethanol etc., negative oxygen ion lowers at the absorbability of gas-sensitive metal oxide surface, and depletion layer reduces so that air-sensitive
The amplitude that resistance rises with temperature reduces, and the peak value of response signal Vg (Rg) diminishes, and the shape of signal changes.In Figure 18
B figure.On the contrary, when in air containing a certain amount of oxidizing gas, such as NO2, negative oxygen ion is at gas-sensitive metal oxide
The absorbability on surface strengthens, and depletion layer increases so that the amplitude that gas sensing resistance rises with temperature also increases, and responds signal Vg
(Rg) peak value becomes big, and signal shape changes.Such as the C figure in Figure 18.Therefore by the change width of detection response signal
Degree, can detect and whether have reducibility gas in air, or oxidizing gas, and their concentration.
But, if there is reducibility gas and oxidizing gas in air simultaneously, it can on the impact of gas sensing resistance
Can cancel out each other, produce test error.Or if air exists multiple reducibility gas or multiple oxidizing gas simultaneously,
Their signal overlaps each other, it is difficult to judge the kind of gas.
The present invention makes multiple gas sensing resistance sensing " pixel " on same silicon chip simultaneously, and gas with various is in each pixel
Oneself unique rule of being formed of characteristic, or " fingerprint ".By the resistance value with each pixel cell of the methods analyst of software
Pulse signal, the response data of the most original known gas through calibration, can accurately detect the one-tenth of multiple gas simultaneously
Divide and concentration.
Above the specific embodiment of the present invention is described.It is to be appreciated that the invention is not limited in above-mentioned
Particular implementation, those skilled in the art can make various deformation or amendment within the scope of the claims, this not shadow
Ring the flesh and blood of the present invention.
Claims (10)
1. the manufacture method of the sensor utilizing many inducing pixels detection multiple gases, it is characterised in that include walking as follows
Rapid:
Step S1: produce multiple heating resistor layer at silicon chip (1)；
Step S2: form multiple gas sensing resistance of different nature or many inducing pixels on described heating resistor layer；
Step S3: carry out vacuum bakeout；
Step S4: process gas sensing electrode contact hole and resistive layers make contact hole (14) for heating resistor layer and gas sensing resistance, at gas
Quick electrode contact hole and resistive layers make contact hole (14) upper welding electrode lead-in wire.
The manufacture method of the sensor utilizing many inducing pixels detection multiple gases the most according to claim 1, its feature
Being, described step S1 comprises the steps:
Step S101: at silicon chip (1) upper deposit ground floor silicon oxide sio2Thin film (2)；
Step S102: at ground floor silicon oxide sio2Thin film (2) upper deposit first layer metal thin film (3)；
Step S103: carve multiple heating resistor layer at first layer metal thin film (3).
The manufacture method of the sensor utilizing many inducing pixels detection multiple gases the most according to claim 2, its feature
Being, described step S2 comprises the steps
Step S201: first layer metal thin film (3) one layer of silicon nitride film (4) of upper deposit；
Step S202: etch nitride silicon thin film (4), outputs the first contact hole (7), and the first contact hole (7) exposes ground floor gold
Belong to thin film (3)；
Step S203: at silicon nitride film (4) upper deposit second layer metal thin film (5), second layer metal thin film (5) passes through first
Contact hole (7) is connected with first layer metal thin film (3)；
Step S204: at second layer metal thin film (5) upper deposit third layer metallic film (6)；
Step S205: etch the first groove (8) at the 3rd metallic film (6), the bottom land of the first groove (8) is second layer metal
Thin film (5)；
Step S206: in the first groove (8), second layer metal thin film (5) is etched the second groove (9), the second groove (9)
Bottom land be on silicon nitride film (4)；
Step S207: at second layer metal thin film (5) and third layer metallic film (6) upper deposit second layer silicon oxide sio2Thin film
(10)；
Step S208: at second layer silicon oxide sio2The upper coating photoresist (111) of thin film (10), makes by lithography in the second groove (9)
Second contact hole (121), and etch away the second layer silicon oxide sio under the second contact hole (121)2Thin film (10)；
Step S209: upper and the second contact hole (121) the first metal-oxide film of upper deposit (131) at photoresist (111)；
Step S210: remove photoresist (111) with above the first metal-oxide film (131) of stripping photoresist (111),
Gas-sensitive metal sull (131) on described second contact hole (121) forms first gas sensing resistance, the first gas described
The two ends of quick resistance are connected to third layer metallic film (6) by second layer metal thin film (5) respectively.
The manufacture method of the sensor utilizing many inducing pixels detection multiple gases the most according to claim 3, its feature
It is, repeats step S208 to step S210 and form multiple different gas sensing resistance.
The manufacture method of the sensor utilizing many inducing pixels detection multiple gases the most according to claim 1, its feature
Being, in described step S3, baking temperature is between 300 DEG C to 500 DEG C, and baking time is between 10 minutes to 4 hours.
The manufacture method of the sensor utilizing many inducing pixels detection multiple gases the most according to claim 3, its feature
Being, described step S4 comprises the steps:
Step S401: etching of second layer silicon oxide sio2Thin film (10) forms gas sensing electrode contact hole respectively in gas sensing resistance both sides
With resistive layers make contact hole (14), gas sensing electrode contact hole and resistive layers make contact hole (14) expose third layer metallic film (6)；
Step S402: at gas sensing electrode contact hole and resistive layers make contact hole (14) upper welding electrode lead-in wire.
The manufacture method of the sensor utilizing many inducing pixels detection multiple gases the most according to claim 3, its feature
Be, also include step S5, described step S5 particularly as follows:
Utilize gas with various in the unique trait of different gas sensing resistances or " fingerprint ", the kind of detected gas and concentration.
The manufacture method of the sensor utilizing many inducing pixels detection multiple gases the most according to claim 3, its feature
It is, ground floor silicon oxide sio2The thickness of thin film (2) is that 200 nanometers are to 2 microns；
The thickness of first layer metal thin film (3) is that 200 nanometers are to 1 micron；
The thickness of silicon nitride film (4) is that 10 nanometers are to 200 nanometers；
The thickness of second layer metal thin film (5) is that 100 nanometers are to 1 micron；
The thickness of third layer metallic film (6) is that 200 nanometers are to 3 microns；
Second layer silicon oxide sio2The thickness of thin film (10) is that 50 nanometers are to 500 nanometers；
The thickness of photoresist (111) is that 500 nanometers are to 2 microns；
The thickness of metal-oxide film (131) in 100 nanometers to 800 nanometers.
The manufacture method of the sensor utilizing many inducing pixels detection multiple gases the most according to claim 3, its feature
Being, described heating resistor layer includes heating region and heat dissipation region；Described heat dissipation region is connected by the second metallic film (5)
Third layer metallic film (6).
The manufacture method of the sensor utilizing many inducing pixels detection multiple gases the most according to claim 3, its feature
Being, described heating region is elongated；Described heat dissipation region is interdigitated.
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