CN106130491B - Circuit for realizing automatic TIA (automatic impedance matching) output impedance - Google Patents
Circuit for realizing automatic TIA (automatic impedance matching) output impedance Download PDFInfo
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- CN106130491B CN106130491B CN201610487822.6A CN201610487822A CN106130491B CN 106130491 B CN106130491 B CN 106130491B CN 201610487822 A CN201610487822 A CN 201610487822A CN 106130491 B CN106130491 B CN 106130491B
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- 230000003287 optical effect Effects 0.000 abstract description 3
- 238000004088 simulation Methods 0.000 description 8
- 230000001052 transient effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
- H03F3/082—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with FET's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3084—Automatic control in amplifiers having semiconductor devices in receivers or transmitters for electromagnetic waves other than radiowaves, e.g. lightwaves
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Abstract
The invention relates to the field of high-speed optical communication interfaces, in particular to a circuit for realizing TIA automatic matching output impedance, which can realize accurate automatic matching impedance with a load at the output end of the TIA and comprises a transimpedance amplifier, and is characterized in that the input end of the transimpedance amplifier is connected with the positive electrode of a light emitting diode, one end of a resistor Rf and the source electrode of a first MOS tube, the output end of the transimpedance amplifier is connected with the other end of the resistor Rf, the drain electrode of the first MOS tube, an AGC module and the input end of an LPF, a differential pair circuit, a source follower circuit, a gain operational amplifier circuit, a differential comparator and an RC low-pass filter are sequentially connected, the RC low-pass filter is connected with the source follower circuit, the source follower circuit comprises two source follower MOS tubes, the source electrodes of the two source follower MOS tubes are connected with the input end of one operational amplifier in the gain operational amplifier circuit respectively, the output ends of the two operational amplifiers are connected with the input end of the differential comparator, and the differential comparator is provided with at least four input ends.
Description
Technical Field
The invention relates to the field of high-speed optical communication interfaces, in particular to a circuit for realizing automatic TIA matching output impedance.
Background
In high-speed optical communication network application, the same transimpedance amplifier (TIA) module may be used to match different types of Limiting Amplifier (LA) modules, and in a general TIA differential output circuit, a source follower is often adopted in the final stage, so that low output impedance and larger bandwidth are realized; but for a good match to the limiting amplifier, a 50ohm resistor is often required to achieve impedance matching, which requires the transconductance (gm) of the source follower MOS (metal oxide semiconductor field effect transistor) transistor to be kept at 20mS; however, in practice, the MOS transistor gm of the source follower is not only related to the load, but also has process size mismatch in manufacturing, and also causes that the precise matching of the impedance is difficult to realize due to factors such as temperature, power supply voltage, etc.
Disclosure of Invention
In order to solve the problems, the invention provides a circuit for realizing automatic matching of TIA output impedance, which can realize accurate automatic matching of impedance with a load at the output end of TIA.
The technical scheme is as follows: the circuit for realizing TIA automatic matching output impedance comprises a transimpedance amplifier, and is characterized in that the input end of the transimpedance amplifier is connected with the positive electrode of a light emitting diode, one end of a resistor Rf and the source electrode of a first MOS tube, the output end of the transimpedance amplifier is connected with the other end of the resistor Rf, the drain electrode of the first MOS tube, an AGC module and the input end of an LPF, the LPF is sequentially connected with a differential pair circuit, a source follower circuit, a gain operational amplifier circuit, a differential comparator and an RC low-pass filter, the RC low-pass filter is connected with the source follower circuit, the source follower circuit comprises two source follower MOS tubes, the source electrodes of the two source follower MOS tubes are connected with the input end of one operational amplifier in the gain operational amplifier circuit respectively, and the output ends of the two operational amplifiers are connected with the input end of the differential comparator.
The differential pair circuit is further characterized by comprising a second MOS tube and a third MOS tube, wherein the sources of the second MOS tube and the third MOS tube are connected with the drain electrode of a fourth MOS tube, the grid electrode of the fourth MOS tube is connected with bias voltage Vbias and the source electrode is grounded, the grid electrode of the second MOS tube is connected with the input end of the LPF, the grid electrode of the third MOS tube is connected with the output end of the LPF, the drain electrode of the second MOS tube is connected with one end of a resistor R1 and one of the grid electrodes of the source following MOS, the drain electrode of the third MOS tube is connected with one end of a resistor R2 and the other of the grid electrodes of the source following MOS tube, and the other end of the resistor R1, the other end of the resistor R2 and the drain electrodes of the two source following MOS tubes are connected with a power supply VDD;
the source follower circuit further comprises a fifth MOS tube and a sixth MOS tube, the grid electrodes of the fifth MOS tube and the sixth MOS tube are connected with the output end of the RC low-pass filter, and the drain electrodes of the fifth MOS tube and the sixth MOS tube are respectively connected with the input end of one operational amplifier in the gain operational amplifier circuit.
After the circuit of the invention is adopted, the output of the transimpedance amplifier is differential complementary signals, the differential pair circuit is used as the output of the gain stage, finally, the impedance matching is realized through the source follower circuit, the gain is realized through the operational amplifier, the output of the gain stage is input to the differential comparator, and the automatic matching impedance is realized through the shaping of the RC low-pass filter.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a schematic diagram of transient simulation results for TIA output amplitude without the inventive circuit at Ro > RL/2;
FIG. 3 is a schematic diagram of transient simulation results for TIA output amplitude including the inventive circuit when Ro > RL/2;
FIG. 4 is a schematic diagram of transient simulation results for TIA output amplitude without the inventive circuit at Ro < RL/2;
FIG. 5 is a schematic diagram of transient simulation results of TIA output amplitude including the inventive circuit at Ro < RL/2.
Detailed Description
Referring to fig. 1, the MOSs in the embodiment are NMOS tubes, and may be replaced by PMOS according to actual needs, and the circuit for realizing TIA automatic matching output impedance includes a transimpedance amplifier TIA, an input end of which is connected to a positive electrode of a light emitting diode, one end of a resistor Rf, a source electrode of a first MOS tube M1, an output end of which is connected to the other end of the resistor Rf, a drain electrode of the first MOS tube M1, an AGC module, an input end of an LPF (low pass filter), the LPF is sequentially connected to a differential pair circuit 1-1, a source follower circuit, a gain operational amplifier circuit, a differential comparator 4-1, an RC low pass filter 5-1, and a source follower circuit, the source follower circuit includes two source follower MOS tubes 2-1, 2-2, sources of the two source follower MOS tubes 2-1, 2-2 are connected through a resistor Rl, sources of the two source follower MOS tubes 2-1, 2-2 are also respectively connected to an input end of an operational amplifier in the gain operational amplifier circuit, and the two differential operational amplifier 4-1, 3-2 are connected to the input ends of the differential comparator 4-1.
The differential pair circuit 1-1 comprises a second MOS tube M2 and a third MOS tube M3, wherein the sources of the second MOS tube M2 and the third MOS tube M3 are both connected with the drain electrode of a fourth MOS tube M4, the grid electrode of the fourth MOS tube M4 is connected with bias voltage Vbias and source ground, the grid electrode of the second MOS tube M2 is connected with the input end of an LPF, the grid electrode of the third MOS tube M3 is connected with the output end of the LPF, the drain electrode of the second MOS tube M2 is connected with one end of a resistor R1 and the grid electrode of a source following MOS tube 2-1, one end of a drain electrode of the third MOS tube M3 is connected with one end of a resistor R2 and the grid electrode of the other source following MOS tube 2-2, and the other end of the resistor R1 and the drain electrodes of the two source following MOS tubes are all connected with a power supply VDD; the source follower circuit further comprises a fifth MOS tube M5 and a sixth MOS tube M6, the grid electrodes of the fifth MOS tube M5 and the sixth MOS tube M6 are connected with the output end of the RC low-pass filter 5-1, and the drain electrodes of the fifth MOS tube M5 and the sixth MOS tube M6 are respectively connected with the input end of one operational amplifier in the gain operational amplifier circuit.
The invention uses a 4-input differential comparator to realize the following steps: (VIP-VIN) - (2 x vop-2 VON);
the output impedance ro=rl/2 of the source follower MOS transistor is ideal such that 2×vop=vip (likewise, 2×von=vin);
the method comprises the following steps:
when Ro < RL/2;
the output com_out is low, so that the current of the source follower MOS transistor becomes small, gm becomes small, and the output impedance Ro increases until ro=rl/2, 2×vop=vip (2×von=vin).
When Ro > RL/2;
the output com_out is high, so that the current of the source follower MOS transistor becomes large, gm becomes large, and the output impedance Ro decreases until ro=rl/2, 2×vop=vip (2×von=vin).
FIG. 2 shows transient simulation results of TIA output amplitude without the inventive circuit when Ro > RL/2;
description: if the impedances match, ro=rl/2,2VOP =vip, but the 2vop < VIP is made due to the inability to achieve automatic matching impedance;
FIG. 3 shows the transient simulation results of TIA output amplitude including the inventive circuit when Ro > RL/2;
description: initially, the impedance is not matched, ro is larger than RL/2,2VOP is smaller than the output impedance Ro of the source follower MOS tube due to the existence of the impedance automatic matching circuit, and finally, 2 VOP=VIP is obtained after the impedance is matched with RL/2;
FIG. 4 is a transient simulation result of TIA output amplitude without this inventive circuit at Ro < RL/2;
description: if the impedances are matched, ro=rl/2,2VOP =vip, but since automatic matching of the impedances cannot be achieved, 2vop > VIP is caused;
fig. 5: when Ro < RL/2, the TIA comprising the circuit outputs transient simulation results of amplitude values;
description: initially, the impedance is not matched, ro < RL/2,2VOP > VIP, but because of the automatic impedance matching structure, VCTRL becomes smaller, and the output impedance Ro of the source follower MOS transistor becomes larger until the impedance is automatically matched with RL/2, and finally, 2 vop=vip is obtained.
Claims (3)
1. The circuit for realizing TIA automatic matching output impedance comprises a transimpedance amplifier, and is characterized in that the input end of the transimpedance amplifier is connected with the positive electrode of a light emitting diode, one end of a resistor Rf and the source electrode of a first MOS tube, the output end of the transimpedance amplifier is connected with the other end of the resistor Rf, the drain electrode of the first MOS tube, an AGC module and the input end of an LPF, the LPF is sequentially connected with a differential pair circuit, a source follower circuit, a gain operational amplifier circuit, a differential comparator and an RC low-pass filter, the RC low-pass filter is connected with the source follower circuit, the source follower circuit comprises two source follower MOS tubes, the source electrodes of the two source follower MOS tubes are connected through a resistor Rl, the source electrodes of the two source follower MOS tubes are respectively connected with the input end of one operational amplifier in the gain operational amplifier circuit, the output end of the two operational amplifier is connected with the input end of the differential comparator, and the differential comparator is provided with at least four input ends.
2. The circuit for realizing automatic matching of output impedance of TIA according to claim 1, wherein the differential pair circuit comprises a second MOS tube and a third MOS tube, sources of the second MOS tube and the third MOS tube are all connected with drain electrodes of a fourth MOS tube, a grid electrode of the fourth MOS tube is connected with bias voltage Vbias, a source electrode is grounded, a grid electrode of the second MOS tube is connected with an input end of the LPF, a grid electrode of the third MOS tube is connected with an output end of the LPF, a drain electrode of the second MOS tube is connected with one end of a resistor R1, one of the grid electrodes of a source follower MOS, a drain electrode of the third MOS tube is connected with one end of a resistor R2, the other end of the resistor R1, the other end of the resistor R2 and drain electrodes of the two source follower MOS tubes are all connected with a power supply VDD.
3. The circuit for realizing automatic matching of TIA output impedance according to claim 2, wherein the source follower circuit further comprises a fourth MOS transistor and a fifth MOS transistor, gates of the fourth MOS transistor and the fifth MOS transistor are both connected to an output end of the RC low-pass filter, and drains of the fourth MOS transistor and the fifth MOS transistor are each connected to an input end of one of the gain op-amp circuits.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610487822.6A CN106130491B (en) | 2016-06-28 | 2016-06-28 | Circuit for realizing automatic TIA (automatic impedance matching) output impedance |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610487822.6A CN106130491B (en) | 2016-06-28 | 2016-06-28 | Circuit for realizing automatic TIA (automatic impedance matching) output impedance |
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| CN106130491A CN106130491A (en) | 2016-11-16 |
| CN106130491B true CN106130491B (en) | 2023-05-23 |
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| CN107302345B (en) * | 2017-06-29 | 2023-05-05 | 厦门优迅高速芯片有限公司 | Be applied to optical communication transimpedance amplifier segmentation automatic gain circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6133763A (en) * | 1997-09-29 | 2000-10-17 | Sony Corporation | High impedance circuit |
| CN1326545A (en) * | 1998-11-18 | 2001-12-12 | 艾利森电话股份有限公司 | Detection circuit |
| EP2913922A1 (en) * | 2014-02-28 | 2015-09-02 | Telefonaktiebolaget L M Ericsson (publ) | A low noise amplifier circuit |
| CN206004630U (en) * | 2016-06-28 | 2017-03-08 | 无锡思泰迪半导体有限公司 | Realize the circuit of TIA Auto-matching output impedance |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1296446A1 (en) * | 2001-09-25 | 2003-03-26 | Koninklijke Philips Electronics N.V. | Balanced Mixer using bipolar Transistors |
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2016
- 2016-06-28 CN CN201610487822.6A patent/CN106130491B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6133763A (en) * | 1997-09-29 | 2000-10-17 | Sony Corporation | High impedance circuit |
| CN1326545A (en) * | 1998-11-18 | 2001-12-12 | 艾利森电话股份有限公司 | Detection circuit |
| EP2913922A1 (en) * | 2014-02-28 | 2015-09-02 | Telefonaktiebolaget L M Ericsson (publ) | A low noise amplifier circuit |
| CN206004630U (en) * | 2016-06-28 | 2017-03-08 | 无锡思泰迪半导体有限公司 | Realize the circuit of TIA Auto-matching output impedance |
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