CN106124572A - alarm based on CO gas detection function - Google Patents
alarm based on CO gas detection function Download PDFInfo
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- CN106124572A CN106124572A CN201610429884.1A CN201610429884A CN106124572A CN 106124572 A CN106124572 A CN 106124572A CN 201610429884 A CN201610429884 A CN 201610429884A CN 106124572 A CN106124572 A CN 106124572A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
- G01N27/127—Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles
Abstract
The application relates to alarm based on CO gas detection function, this alarm include alarm device and CO gas sensor, described CO gas sensor include Si substrate, be formed at the suprabasil silicon oxide film of described Si, the W film that is placed on described silicon oxide film, the WO that is formed on W film3Nano wire film, it is overlying on WO3SnO on nano wire film2Nano thin-film, at SnO2On nano thin-film make two Pt electrodes and be positioned at the suprabasil heating module of described Si.This alarm is highly sensitive to CO gas, and response time is short, and repeatability and stability are the most preferable.
Description
Technical field
The application relates to alarm field, particularly relates to alarm based on CO gas detection function.
Background technology
Gas alarm is Leakage inspection alarm, and operation principle is for flammable or poisonous etc. when having in working environment
During specific gas leakage, after gas alarm detects the setting value of this gas concentration, alarm will send alarm signal, with
Prompting takes safety measures.
MOS type gas sensor has the advantages such as corrosion-resistant, cost of manufacture is low, Cleaning Principle is simple,
But, existing metal oxide semiconductor sensor based on CO gas detecting still has selectivity, less stable, response not
Reach the problems such as the sensitiveest.
Summary of the invention
For overcoming problem present in correlation technique, the application provides alarm based on CO gas detection function.
The present invention is achieved through the following technical solutions: alarm based on CO gas detection function, and this alarm includes report
Alarm device and CO gas sensor;Described CO gas sensor includes Si substrate, to be formed at the suprabasil silicon oxide of described Si thin
Film, the W film being placed on described silicon oxide film, the WO that is formed on W film3Nano wire film, it is overlying on WO3On nano wire film
SnO2Nano thin-film, at SnO2On nano thin-film make two Pt electrodes and be positioned at the heating module below described Si substrate;Institute
State WO3Nanowire length is 500~8000nm.
Preferably, the preparation method of CO gas sensor comprises the steps:
Step one, preparation Si substrate:
Take the silicon chip of certain size (5cm × 5cm), sequentially pass through acetone, ethanol, deionized water ultrasonic cleaning, time ultrasonic
Between be 30min, then silicon chip is being put in oxidation furnace, thermal oxide at 1100 DEG C, obtain a layer thickness about at silicon chip surface
The silicon oxide film of 600nm;
Step 2, prepares WO3Nano wire film:
Silicon chip through step one thermal oxide is put in magnetic control sputtering device, is evacuated to 2.0 × 10-3Hereinafter, then utilize
Magnetron sputtering technique, plates one layer of W film at silicon oxide surface, using as WO3The growth source of nano wire, magnetron sputtering power is
The thickness of 300W, W film is 300nm, and size is 3cm × 3cm;
Then silicon chip is put in tube furnace, at ambient pressure, be passed through the Ar gas of 20sccm, first stablize 1h, discharge tube furnace
In air, following heated Tube-furnace to 380 DEG C, and is incubated 6h with the ramp of 10 DEG C/min, be incubated complete allow its from
So cooling, takes out silicon chip after dropping to room temperature, obtains one layer of WO on the W film surface of silicon chip3Nano wire film;
Step 3, prepares SnO2Nano thin-film:
First, prepare 100ml deionized water, weigh 5g SnCl4·5H2O is dissolved in deionized water, adds 0.3g Fructus Citri Limoniae subsequently
Acid, heated solution to 53 DEG C, under magnetic stirring, ammonia to the pH value adding 0.5mol/L is 3, prepares Sn (OH)4Precipitate,
Precipitation stands 15h, removes removing chloride through repeatedly washing;Then 7g TiO is weighed2Nanoparticle, with precipitation mixed grinding
0.5h, forms mixture precipitation, mixture precipitation is heated to 63 DEG C, adds back dissolving in saturated oxalic acid, until precipitation is the most molten
Solve, obtain transparent SnO2Colloidal sol, joins saturated for 10ml Polyethylene Glycol in vitreosol as surfactant, and puts into
90 DEG C of baking oven dries 20h, obtains SnO2Gel Precursor, by this SnO2Gel Precursor is roasting 1.5h at 580 DEG C, is mixed
Miscellaneous TiO2The SnO of nanoparticle2Nanometer powder;
Use terpineol and SnO2Nanometer powder mixes, and preparation becomes SnO2Slurry, and use the method for silk screen printing to incite somebody to action
SnO2Slurry is coated in the WO of silicon chip3Nano wire film region, SnO2Slurry thickness is 2 μm, is dried by silicon chip subsequently at 100 DEG C
Dry 5min, at WO3One layer of SnO of nano wire film area filling2Nano thin-film;
Step 4, preparation pt electrode:
This sensor electrode uses Pt electrode, utilizes magnetron sputtering to combine template at SnO2Pulp surface makes two Pt
Electrode;Described Pt electrode is added with Bi2O3Material and MgB2Material, described Bi2O3The addition of material be 0.01wt%~
0.1wt%, described MgB2The addition of material is 0.005wt%~0.05wt%.
Step 5, assembling CO gas sensor:
Wire and two Pt electrodes are connected, at Si backside of substrate, heating module and the shell mechanism of sensor is installed.
The technical scheme that embodiments herein provides can include following beneficial effect:
(1) alarm based on CO gas detection function that embodiments herein is provided, this alarm includes reporting to the police
Device and CO gas sensor, and this CO gas sensor is based on SnO2The resistor-type CO sensor of nano material, passes through WO3
Nano wire and SnO2The combination of nano material, enhances the aspect effects such as selectivity, stability that CO detects by CO gas sensor
Really;CO gas sensor is at WO3On the basis of nano wire film, coat one layer of SnO2Nano material, is filled between nano wire sky
Gap, due to WO3Nano wire has bigger specific surface area so that itself and SnO2Nano material contact area substantially increases, WO3Receive
Rice noodle is cooked catalyst and substantially increases SnO2Sensitivity and selectivity to CO, and then improve the sensitivity of alarm.
(2) alarm based on CO gas detection function that embodiments herein is provided, the CO gas used due to it
Body sensor uses SnO2Nano material is prepared by sol-gal process, and SnO2Nano material increases with the contact area of gas, enters
And improve SnO2The nano material absorbability to gas, simultaneously because doping TiO2Nanoparticle, it is possible to promote material surface
Oxonium ion and the reaction of reducibility gas CO, and then improve the sensor sensitivity to CO.
Aspect and advantage that the application adds will part be given in the following description, and part will become from the following description
Obtain substantially, or recognized by the practice of the application.It should be appreciated that above general description and details hereinafter only describe
It is exemplary and explanatory, the application can not be limited.
Accompanying drawing explanation
Accompanying drawing herein is merged in description and constitutes the part of this specification, it is shown that meet the enforcement of the present invention
Example, and for explaining the principle of the present invention together with description.
Fig. 1 be the present invention alarm in the structural representation of CO gas sensor.Wherein: 01-Si substrate, 02-oxidation
Silicon thin film, 03-W film, 04-WO3Nano wire film, 05-SnO2Nano thin-film, 06-Pt electrode, 07-heating module.
Fig. 2 is to prepare CO gas sensor flow chart.
Detailed description of the invention
Here will illustrate exemplary embodiment in detail, its example represents in the accompanying drawings.Explained below relates to
During accompanying drawing, unless otherwise indicated, the same numbers in different accompanying drawings represents same or analogous key element.Following exemplary embodiment
Described in embodiment do not represent all embodiments consistent with the present invention.On the contrary, they are only with the most appended
The example of the apparatus and method that some aspects that described in detail in claims, the present invention are consistent.
Following disclosure provides many different embodiments or example for realizing the different structure of the application.For letter
Changing disclosure herein, hereinafter parts and setting to specific examples are described.Certainly, they are the most merely illustrative, and
It is not intended to limit the application.Additionally, the application can in different examples repeat reference numerals and/or letter.This heavy
It is for purposes of simplicity and clarity again, itself is more than the relation between various embodiment being discussed and/or arranging.This
Outward, the various specific technique that this application provides and the example of material, but those of ordinary skill in the art it can be appreciated that
The applicability of other techniques and/or the use of other materials.It addition, fisrt feature described below Second Eigenvalue " on "
Structure can include that the first and second features are formed as the embodiment directly contacted, it is also possible to include that other feature is formed at
Embodiment between first and second features, such first and second features are not likely to be directly contact.
In the description of the present application, it should be noted that unless otherwise prescribed and limit, term " is installed ", " being connected ",
" connect " and should be interpreted broadly, for example, it may be mechanically connected or electrical connection, it is also possible to be the connection of two element internals, can
Being to be joined directly together, it is also possible to be indirectly connected to by intermediary, for the ordinary skill in the art, can basis
Concrete condition understands the concrete meaning of above-mentioned term.
At present, sensor technology has become as the pith of modern development in science and technology, itself and computer technology, communication technology
Three broad aspect of composition modern information technologies.It is a weight of sensor based on gas detecting and the gas sensor identifying warning
Want branch.At aspects such as breed of crop, beverage industry, food industry, atmospheric monitoring, commercial production, sensor plays more
Carry out the most important effect.
CO gas is a kind of gas harmful to human body and environmental toxic.After people suck a small amount of CO, its easily with blood
In liquid, haemachrome combines and forms stable associated complex, causes hemoglobin to lose the ability of conveying oxygen, eventually causes human body group
Knitting anoxia, the lighter produces the symptoms such as headache, vomiting, and severe patient can cause brain injury or death.
In productive life, the source of CO is a lot.In coke plant, steel mill, chemical plant etc., operator are likely to be exposed at
In high concentration CO gas, family's coal heating, the accident leakage of terminal coal gas, scene of fire etc. also can produce a large amount of CO, easily
Cause the poisoning of people.It addition, CO is a kind of inflammable and explosive gas simultaneously, when in air CO content 12%~74%
Time can explode.
The sensor being currently based on CO gas detecting mainly has MOS type, electrochemistry type, solid electrolytic
Matter type, catalytic combustion type etc., MOS type sensor has Heat stability is good, low cost, components and parts making letter
The advantages such as list, have become as the class sensor that research is more.
Stannum is a kind of common elements, is positioned at IVA race in periodic chart, and it can be combined into many oxide with oxygen, wherein,
SnO2It is most stable of.SnO2Belong to a kind of typical wide bandgap semiconductor metal-oxide, due to self crystal structure, table
Face characteristic and characterization of adsorption etc., SnO2The fields such as gas sensor, solaode, electrochemistry are widely used.SnO2Make
For a kind of important gas sensor sensitive material, there is the advantages such as response is sensitive, cost of manufacture is low, technological process is simple, warp
It is commonly used for the detection of reducibility gas.
The probe gas principle of MOS type gas sensor is based on sensing element and object gas
Interact.Metal-oxide semiconductor (MOS) has stronger physically or chemically absorbability for gas, when itself and air contact
Time, the oxygen in air can be adsorbed in the surface of metal-oxide semiconductor (MOS) sensitive material, and interact with sensitive material, produce
Negative oxygen ion;When, after contact reducibility gas, reducibility gas reacts with the negative oxygen ion on this sensitive material surface, causes partly leading
Body sensitive material carrier concentration becomes big, thus causes this sensitive material electrical conductivity to become big, and resistance declines, based on sensitive material electricity
The change of characteristic, it is achieved the detection to reducibility gas.
MOS type gas sensor has the advantages such as corrosion-resistant, cost of manufacture is low, Cleaning Principle is simple,
But, existing metal oxide semiconductor sensor based on CO gas detecting still has selectivity, less stable, response not
Reach the problems such as the sensitiveest.
Embodiment one:
Embodiments herein relates to alarm based on CO gas detection function, and this alarm includes alarm device and CO
Gas sensor;As it is shown in figure 1, described CO gas sensor includes Si substrate (01), is formed on described Si substrate (01)
Silicon oxide film (02), the W film (03) being placed on described silicon oxide film (02), the WO that is formed on W film (03)3Nano wire is thin
Film (04), it is overlying on WO3SnO on nano wire film (04)2Nano thin-film (05), at SnO2The two of the upper making of nano thin-film (05)
Individual Pt electrode (06) and be positioned at the heating module (07) below described Si substrate;Described WO3Nanowire length be 500~
8000nm。
Preferably, the preparation method such as Fig. 2, CO gas sensor comprises the steps:
Step one, preparation Si substrate:
Take the silicon chip of certain size (5cm × 5cm), sequentially pass through acetone, ethanol, deionized water ultrasonic cleaning, time ultrasonic
Between be 30min, then silicon chip is being put in oxidation furnace, thermal oxide at 1100 DEG C, obtain a layer thickness about at silicon chip surface
The silicon oxide film of 600nm;
Step 2, prepares WO3Nano wire film:
Silicon chip through step one thermal oxide is put in magnetic control sputtering device, is evacuated to 2.0 × 10-3Hereinafter, then utilize
Magnetron sputtering technique, plates one layer of W film at silicon oxide surface, using as WO3The growth source of nano wire, magnetron sputtering power is
The thickness of 300W, W film is 300nm, and size is 3cm × 3cm;
Then silicon chip is put in tube furnace, at ambient pressure, be passed through the Ar gas of 20sccm, first stablize 1h, discharge tube furnace
In air, following heated Tube-furnace to 380 DEG C, and is incubated 6h with the ramp of 10 DEG C/min, be incubated complete allow its from
So cooling, takes out silicon chip after dropping to room temperature, obtains one layer of WO on the W film surface of silicon chip3Nano wire film;
Step 3, prepares SnO2Nano thin-film:
First, prepare 100ml deionized water, weigh 5g SnCl4·5H2O is dissolved in deionized water, adds 0.3g Fructus Citri Limoniae subsequently
Acid, heated solution to 53 DEG C, under magnetic stirring, ammonia to the pH value adding 0.5mol/L is 3, prepares Sn (OH)4Precipitate,
Precipitation stands 15h, removes removing chloride through repeatedly washing;Then 7g TiO is weighed2Nanoparticle, with precipitation mixed grinding
0.5h, forms mixture precipitation, mixture precipitation is heated to 63 DEG C, adds back dissolving in saturated oxalic acid, until precipitation is the most molten
Solve, obtain transparent SnO2Colloidal sol, joins saturated for 10ml Polyethylene Glycol in vitreosol as surfactant, and puts into
90 DEG C of baking oven dries 20h, obtains SnO2Gel Precursor, by this SnO2Gel Precursor is roasting 1.5h at 580 DEG C, is mixed
Miscellaneous TiO2The SnO of nanoparticle2Nanometer powder;
Use terpineol and SnO2Nanometer powder mixes, and preparation becomes SnO2Slurry, and use the method for silk screen printing to incite somebody to action
SnO2Slurry is coated in the WO of silicon chip3Nano wire film region, SnO2Slurry thickness is 2 μm, is dried by silicon chip subsequently at 100 DEG C
Dry 5min, at WO3One layer of SnO of nano wire film area filling2Nano thin-film;
Step 4, preparation pt electrode:
This sensor electrode uses Pt electrode, utilizes magnetron sputtering to combine template at SnO2Pulp surface makes two Pt
Electrode;Described Pt electrode is added with Bi2O3Material and MgB2Material, described Bi2O3The addition of material be 0.01wt%~
0.1wt%, described MgB2The addition of material is 0.005wt%~0.05wt%.
Step 5, assembling CO gas sensor:
Wire and two Pt electrodes are connected, at Si backside of substrate, heating module and the shell mechanism of sensor is installed.
Preferably, the test system of described CO sensor is made up of gas dilution system, electrochemical workstation, and it is right to realize
The detection of minimum 1ppm gas, puts into test chamber the sample sensor made, and discharges chamber air, two electrodes and external electrical
Chem workstation connects, and test voltage is 10V.Sensor response value is defined as: R=R0/Rg, wherein R0 be material in atmosphere
Resistance, Rg is material resistance in certain concentration object gas, response time and recovery time is respectively response value and recovery
Value reaches the time used during the 90% of balance.Found by test, CO concentration be respectively 200,500,1000,
During 1500ppm, this sensor response value corresponds to 14,29,41,72, H2 concentration be respectively 200,500,1000,
During 1500ppm, this sensor response value corresponds to 5,9,16,54, shows preferable CO selectivity;By the repeatability of 2000 times
Test, under same concentrations CO, response value drops to original 93%, has good stability.
Test specification, this alarm is highly sensitive, repeated, have good stability, and has the biggest market application foreground.
Embodiment two:
Embodiments herein relates to alarm based on CO gas detection function, and this alarm includes alarm device and CO
Gas sensor;As it is shown in figure 1, described CO gas sensor includes Si substrate (01), is formed on described Si substrate (01)
Silicon oxide film (02), the W film (03) being placed on described silicon oxide film (02), the WO that is formed on W film (03)3Nano wire is thin
Film (04), it is overlying on WO3SnO on nano wire film (04)2Nano thin-film (05), at SnO2The two of the upper making of nano thin-film (05)
Individual Pt electrode (06) and be positioned at the heating module (07) below described Si substrate;Described WO3Nanowire length be 500~
7000nm。
Preferably, the preparation method such as Fig. 2, CO gas sensor comprises the steps:
Step one, preparation Si substrate:
Take the silicon chip of certain size (5cm × 5cm), sequentially pass through acetone, ethanol, deionized water ultrasonic cleaning, time ultrasonic
Between be 30min, then silicon chip is being put in oxidation furnace, thermal oxide at 1100 DEG C, obtain a layer thickness about at silicon chip surface
The silicon oxide film of 900nm;
Step 2, prepares WO3Nano wire film:
Silicon chip through step one thermal oxide is put in magnetic control sputtering device, is evacuated to 2.0 × 10-3Hereinafter, then utilize
Magnetron sputtering technique, plates one layer of W film at silicon oxide surface, using as WO3The growth source of nano wire, magnetron sputtering power is
The thickness of 300W, W film is 300nm, and size is 3cm × 3cm;
Then silicon chip is put in tube furnace, at ambient pressure, be passed through the Ar gas of 20sccm, first stablize 1h, discharge tube furnace
In air, following heated Tube-furnace to 380 DEG C, and is incubated 6h with the ramp of 10 DEG C/min, be incubated complete allow its from
So cooling, takes out silicon chip after dropping to room temperature, obtains one layer of WO on the W film surface of silicon chip3Nano wire film;
Step 3, prepares SnO2Nano thin-film:
First, prepare 100ml deionized water, weigh 5g SnCl4·5H2O is dissolved in deionized water, adds 0.3g Fructus Citri Limoniae subsequently
Acid, heated solution to 53 DEG C, under magnetic stirring, ammonia to the pH value adding 0.5mol/L is 3, prepares Sn (OH)4Precipitate,
Precipitation stands 15h, removes removing chloride through repeatedly washing;Then 3g TiO is weighed2Nanoparticle, with precipitation mixed grinding
0.5h, forms mixture precipitation, mixture precipitation is heated to 63 DEG C, adds back dissolving in saturated oxalic acid, until precipitation is the most molten
Solve, obtain transparent SnO2Colloidal sol, joins saturated for 10ml Polyethylene Glycol in vitreosol as surfactant, and puts into
90 DEG C of baking oven dries 20h, obtains SnO2Gel Precursor, by this SnO2Gel Precursor is roasting 1.5h at 580 DEG C, is mixed
Miscellaneous TiO2The SnO of nanoparticle2Nanometer powder;
Use terpineol and SnO2Nanometer powder mixes, and preparation becomes SnO2Slurry, and use the method for silk screen printing to incite somebody to action
SnO2Slurry is coated in the WO of silicon chip3Nano wire film region, SnO2Slurry thickness is 2 μm, is dried by silicon chip subsequently at 100 DEG C
Dry 5min, at WO3One layer of SnO of nano wire film area filling2Nano thin-film;
Step 4, preparation pt electrode:
This sensor electrode uses Pt electrode, utilizes magnetron sputtering to combine template at SnO2Pulp surface makes two Pt
Electrode;Described Pt electrode is added with Bi2O3Material and MgB2Material, described Bi2O3The addition of material be 0.01wt%~
0.1wt%, described MgB2The addition of material is 0.005wt%~0.05wt%.
Step 5, assembling CO gas sensor:
Wire and two Pt electrodes are connected, at Si backside of substrate, heating module and the shell mechanism of sensor is installed.
Preferably, the test system of described CO sensor is made up of gas dilution system, electrochemical workstation, and it is right to realize
The detection of minimum 1ppm gas, puts into test chamber the sample sensor made, and discharges chamber air, two electrodes and external electrical
Chem workstation connects, and test voltage is 10V.Sensor response value is defined as: R=R0/Rg, wherein R0 be material in atmosphere
Resistance, Rg is material resistance in certain concentration object gas, response time and recovery time is respectively response value and recovery
Value reaches the time used during the 90% of balance.Found by test, CO concentration be respectively 200,500,1000,
During 1500ppm, this sensor response value corresponds to 14,29,41,72, H2 concentration be respectively 200,500,1000,
During 1500ppm, this sensor response value corresponds to 5,9,16,45, shows preferable CO selectivity;By the repeatability of 2000 times
Test, under same concentrations CO, response value drops to original 93%, has good stability.
Test specification, this alarm is highly sensitive, repeated, have good stability, and has the biggest market application foreground.
Embodiment three:
Embodiments herein relates to alarm based on CO gas detection function, and this alarm includes alarm device and CO
Gas sensor;As it is shown in figure 1, described CO gas sensor includes Si substrate (01), is formed on described Si substrate (01)
Silicon oxide film (02), the W film (03) being placed on described silicon oxide film (02), the WO that is formed on W film (03)3Nano wire is thin
Film (04), it is overlying on WO3SnO on nano wire film (04)2Nano thin-film (05), at SnO2The two of the upper making of nano thin-film (05)
Individual Pt electrode (06) and be positioned at the heating module (07) below described Si substrate;Described WO3Nanowire length be 500~
6000nm。
Preferably, the preparation method such as Fig. 2, CO gas sensor comprises the steps:
Step one, preparation Si substrate:
Take the silicon chip of certain size (5cm × 5cm), sequentially pass through acetone, ethanol, deionized water ultrasonic cleaning, time ultrasonic
Between be 30min, then silicon chip is being put in oxidation furnace, thermal oxide at 1100 DEG C, obtain a layer thickness about at silicon chip surface
The silicon oxide film of 600nm;
Step 2, prepares WO3Nano wire film:
Silicon chip through step one thermal oxide is put in magnetic control sputtering device, is evacuated to 2.0 × 10-3Hereinafter, then utilize
Magnetron sputtering technique, plates one layer of W film at silicon oxide surface, using as WO3The growth source of nano wire, magnetron sputtering power is
The thickness of 300W, W film is 300nm, and size is 3cm × 3cm;
Then silicon chip is put in tube furnace, at ambient pressure, be passed through the Ar gas of 20sccm, first stablize 1h, discharge tube furnace
In air, following heated Tube-furnace to 380 DEG C, and is incubated 6h with the ramp of 10 DEG C/min, be incubated complete allow its from
So cooling, takes out silicon chip after dropping to room temperature, obtains one layer of WO on the W film surface of silicon chip3Nano wire film;
Step 3, prepares SnO2Nano thin-film:
First, prepare 100ml deionized water, weigh 5g SnCl4·5H2O is dissolved in deionized water, adds 0.3g Fructus Citri Limoniae subsequently
Acid, heated solution to 53 DEG C, under magnetic stirring, ammonia to the pH value adding 0.5mol/L is 3, prepares Sn (OH)4Precipitate,
Precipitation stands 15h, removes removing chloride through repeatedly washing;Then 7g TiO is weighed2Nanoparticle, with precipitation mixed grinding
0.5h, forms mixture precipitation, mixture precipitation is heated to 63 DEG C, adds back dissolving in saturated oxalic acid, until precipitation is the most molten
Solve, obtain transparent SnO2Colloidal sol, joins saturated for 10ml Polyethylene Glycol in vitreosol as surfactant, and puts into
90 DEG C of baking oven dries 20h, obtains SnO2Gel Precursor, by this SnO2Gel Precursor is roasting 1.5h at 580 DEG C, is mixed
Miscellaneous TiO2The SnO of nanoparticle2Nanometer powder;
Use terpineol and SnO2Nanometer powder mixes, and preparation becomes SnO2Slurry, and use the method for silk screen printing to incite somebody to action
SnO2Slurry is coated in the WO of silicon chip3Nano wire film region, SnO2Slurry thickness is 2 μm, is dried by silicon chip subsequently at 100 DEG C
Dry 5min, at WO3One layer of SnO of nano wire film area filling2Nano thin-film;
Step 4, preparation pt electrode:
This sensor electrode uses Pt electrode, utilizes magnetron sputtering to combine template at SnO2Pulp surface makes two Pt
Electrode;Described Pt electrode is added with Bi2O3Material and MgB2Material, described Bi2O3The addition of material be 0.05wt%~
0.5wt%, described MgB2The addition of material is 0.005wt%~0.05wt%.
Step 5, assembling CO gas sensor:
Wire and two Pt electrodes are connected, at Si backside of substrate, heating module and the shell mechanism of sensor is installed.
Preferably, the test system of described CO sensor is made up of gas dilution system, electrochemical workstation, and it is right to realize
The detection of minimum 1ppm gas, puts into test chamber the sample sensor made, and discharges chamber air, two electrodes and external electrical
Chem workstation connects, and test voltage is 10V.Sensor response value is defined as: R=R0/Rg, wherein R0 be material in atmosphere
Resistance, Rg is material resistance in certain concentration object gas, response time and recovery time is respectively response value and recovery
Value reaches the time used during the 90% of balance.Found by test, CO concentration be respectively 200,500,1000,
During 1500ppm, this sensor response value corresponds to 14,29,41,72, H2 concentration be respectively 200,500,1000,
During 1500ppm, this sensor response value corresponds to 5,9,32,52, shows preferable CO selectivity;By the repeatability of 2000 times
Test, under same concentrations CO, response value drops to original 93%, has good stability.
Test specification, this alarm is highly sensitive, repeated, have good stability, and has the biggest market application foreground.
Embodiment four:
Embodiments herein relates to alarm based on CO gas detection function, and this alarm includes alarm device and CO
Gas sensor;As it is shown in figure 1, described CO gas sensor includes Si substrate (01), is formed on described Si substrate (01)
Silicon oxide film (02), the W film (03) being placed on described silicon oxide film (02), the WO that is formed on W film (03)3Nano wire is thin
Film (04), it is overlying on WO3SnO on nano wire film (04)2Nano thin-film (05), at SnO2The two of the upper making of nano thin-film (05)
Individual Pt electrode (06) and be positioned at the heating module (07) below described Si substrate;Described WO3Nanowire length be 500~
5000nm。
Preferably, the preparation method such as Fig. 2, CO gas sensor comprises the steps:
Step one, preparation Si substrate:
Take the silicon chip of certain size (5cm × 5cm), sequentially pass through acetone, ethanol, deionized water ultrasonic cleaning, time ultrasonic
Between be 30min, then silicon chip is being put in oxidation furnace, thermal oxide at 1100 DEG C, obtain a layer thickness about at silicon chip surface
The silicon oxide film of 600nm;
Step 2, prepares WO3Nano wire film:
Silicon chip through step one thermal oxide is put in magnetic control sputtering device, is evacuated to 2.0 × 10-3Hereinafter, then utilize
Magnetron sputtering technique, plates one layer of W film at silicon oxide surface, using as WO3The growth source of nano wire, magnetron sputtering power is
The thickness of 300W, W film is 600nm, and size is 3cm × 3cm;
Then silicon chip is put in tube furnace, at ambient pressure, be passed through the Ar gas of 20sccm, first stablize 1h, discharge tube furnace
In air, following heated Tube-furnace to 380 DEG C, and is incubated 6h with the ramp of 10 DEG C/min, be incubated complete allow its from
So cooling, takes out silicon chip after dropping to room temperature, obtains one layer of WO on the W film surface of silicon chip3Nano wire film;
Step 3, prepares SnO2Nano thin-film:
First, prepare 100ml deionized water, weigh 5g SnCl4·5H2O is dissolved in deionized water, adds 0.3g Fructus Citri Limoniae subsequently
Acid, heated solution to 53 DEG C, under magnetic stirring, ammonia to the pH value adding 0.5mol/L is 3, prepares Sn (OH)4Precipitate,
Precipitation stands 15h, removes removing chloride through repeatedly washing;Then 7g TiO is weighed2Nanoparticle, with precipitation mixed grinding
0.5h, forms mixture precipitation, mixture precipitation is heated to 63 DEG C, adds back dissolving in saturated oxalic acid, until precipitation is the most molten
Solve, obtain transparent SnO2Colloidal sol, joins saturated for 10ml Polyethylene Glycol in vitreosol as surfactant, and puts into
90 DEG C of baking oven dries 20h, obtains SnO2Gel Precursor, by this SnO2Gel Precursor is roasting 1.5h at 580 DEG C, is mixed
Miscellaneous TiO2The SnO of nanoparticle2Nanometer powder;
Use terpineol and SnO2Nanometer powder mixes, and preparation becomes SnO2Slurry, and use the method for silk screen printing to incite somebody to action
SnO2Slurry is coated in the WO of silicon chip3Nano wire film region, SnO2Slurry thickness is 2 μm, is dried by silicon chip subsequently at 100 DEG C
Dry 5min, at WO3One layer of SnO of nano wire film area filling2Nano thin-film;
Step 4, preparation pt electrode:
This sensor electrode uses Pt electrode, utilizes magnetron sputtering to combine template at SnO2Pulp surface makes two Pt
Electrode;Described Pt electrode is added with Bi2O3Material and MgB2Material, described Bi2O3The addition of material be 0.51wt%~
0.1wt%, described MgB2The addition of material is 0.005wt%~0.05wt%.
Step 5, assembling CO gas sensor:
Wire and two Pt electrodes are connected, at Si backside of substrate, heating module and the shell mechanism of sensor is installed.
Preferably, the test system of described CO sensor is made up of gas dilution system, electrochemical workstation, and it is right to realize
The detection of minimum 1ppm gas, puts into test chamber the sample sensor made, and discharges chamber air, two electrodes and external electrical
Chem workstation connects, and test voltage is 10V.Sensor response value is defined as: R=R0/Rg, wherein R0 be material in atmosphere
Resistance, Rg is material resistance in certain concentration object gas, response time and recovery time is respectively response value and recovery
Value reaches the time used during the 90% of balance.Found by test, CO concentration be respectively 200,500,1000,
During 1500ppm, this sensor response value corresponds to 14,29,41,72, H2 concentration be respectively 200,500,1000,
During 1500ppm, this sensor response value corresponds to 5,9,25,38, shows preferable CO selectivity;By the repeatability of 2000 times
Test, under same concentrations CO, response value drops to original 93%, has good stability.
Test specification, this alarm is highly sensitive, repeated, have good stability, and has the biggest market application foreground.
Embodiment five:
Embodiments herein relates to alarm based on CO gas detection function, and this alarm includes alarm device and CO
Gas sensor;As it is shown in figure 1, described CO gas sensor includes Si substrate (01), is formed on described Si substrate (01)
Silicon oxide film (02), the W film (03) being placed on described silicon oxide film (02), the WO that is formed on W film (03)3Nano wire is thin
Film (04), it is overlying on WO3SnO on nano wire film (04)2Nano thin-film (05), at SnO2The two of the upper making of nano thin-film (05)
Individual Pt electrode (06) and be positioned at the heating module (07) below described Si substrate;Described WO3Nanowire length be 500~
4000nm。
Preferably, the preparation method such as Fig. 2, CO gas sensor comprises the steps:
Step one, preparation Si substrate:
Take the silicon chip of certain size (5cm × 5cm), sequentially pass through acetone, ethanol, deionized water ultrasonic cleaning, time ultrasonic
Between be 30min, then silicon chip is being put in oxidation furnace, thermal oxide at 1100 DEG C, obtain a layer thickness about at silicon chip surface
The silicon oxide film of 600nm;
Step 2, prepares WO3Nano wire film:
Silicon chip through step one thermal oxide is put in magnetic control sputtering device, is evacuated to 2.0 × 10-3Hereinafter, then utilize
Magnetron sputtering technique, plates one layer of W film at silicon oxide surface, using as WO3The growth source of nano wire, magnetron sputtering power is
The thickness of 300W, W film is 300nm, and size is 3cm × 3cm;
Then silicon chip is put in tube furnace, at ambient pressure, be passed through the Ar gas of 20sccm, first stablize 1h, discharge tube furnace
In air, following heated Tube-furnace to 380 DEG C, and is incubated 6h with the ramp of 10 DEG C/min, be incubated complete allow its from
So cooling, takes out silicon chip after dropping to room temperature, obtains one layer of WO on the W film surface of silicon chip3Nano wire film;
Step 3, prepares SnO2Nano thin-film:
First, prepare 100ml deionized water, weigh 5g SnCl4·5H2O is dissolved in deionized water, adds 0.3g Fructus Citri Limoniae subsequently
Acid, heated solution to 53 DEG C, under magnetic stirring, ammonia to the pH value adding 0.5mol/L is 3, prepares Sn (OH)4Precipitate,
Precipitation stands 15h, removes removing chloride through repeatedly washing;Then 7g TiO is weighed2Nanoparticle, with precipitation mixed grinding
0.5h, forms mixture precipitation, mixture precipitation is heated to 63 DEG C, adds back dissolving in saturated oxalic acid, until precipitation is the most molten
Solve, obtain transparent SnO2Colloidal sol, joins saturated for 10ml Polyethylene Glycol in vitreosol as surfactant, and puts into
90 DEG C of baking oven dries 20h, obtains SnO2Gel Precursor, by this SnO2Gel Precursor is roasting 1.5h at 580 DEG C, is mixed
Miscellaneous TiO2The SnO of nanoparticle2Nanometer powder;
Use terpineol and SnO2Nanometer powder mixes, and preparation becomes SnO2Slurry, and use the method for silk screen printing to incite somebody to action
SnO2Slurry is coated in the WO of silicon chip3Nano wire film region, SnO2Slurry thickness is 2 μm, is dried by silicon chip subsequently at 100 DEG C
Dry 5min, at WO3One layer of SnO of nano wire film area filling2Nano thin-film;
Step 4, preparation pt electrode:
This sensor electrode uses Pt electrode, utilizes magnetron sputtering to combine template at SnO2Pulp surface makes two Pt
Electrode;Described Pt electrode is added with Bi2O3Material and MgB2Material, described Bi2O3The addition of material be 0.01wt%~
0.08wt%, described MgB2The addition of material is 0.005wt%~0.05wt%.
Step 5, assembling CO gas sensor:
Wire and two Pt electrodes are connected, at Si backside of substrate, heating module and the shell mechanism of sensor is installed.
Preferably, the test system of described CO sensor is made up of gas dilution system, electrochemical workstation, and it is right to realize
The detection of minimum 1ppm gas, puts into test chamber the sample sensor made, and discharges chamber air, two electrodes and external electrical
Chem workstation connects, and test voltage is 10V.Sensor response value is defined as: R=R0/Rg, wherein R0 be material in atmosphere
Resistance, Rg is material resistance in certain concentration object gas, response time and recovery time is respectively response value and recovery
Value reaches the time used during the 90% of balance.Found by test, CO concentration be respectively 200,500,1000,
During 1500ppm, this sensor response value corresponds to 14,29,41,72, H2 concentration be respectively 200,500,1000,
During 1500ppm, this sensor response value corresponds to 5,9,15,24, shows preferable CO selectivity;By the repeatability of 2000 times
Test, under same concentrations CO, response value drops to original 93%, has good stability.
Test specification, this alarm is highly sensitive, repeated, have good stability, and has the biggest market application foreground.
Those skilled in the art, after considering description and putting into practice invention disclosed herein, will readily occur to its of the present invention
Its embodiment.The application is intended to any modification, purposes or the adaptations of the present invention, these modification, purposes or
Person's adaptations is followed the general principle of the present invention and includes the undocumented common knowledge in the art of the application
Or conventional techniques means.Description and embodiments is considered only as exemplary, and true scope and spirit of the invention are by following
Claim is pointed out.
It should be appreciated that the invention is not limited in precision architecture described above and illustrated in the accompanying drawings, and
And various modifications and changes can carried out without departing from the scope.The scope of the present invention is only limited by appended claim.
Claims (2)
1. alarm based on CO gas detection function, this alarm includes alarm device and CO gas sensor;Described CO gas
Body sensor include Si substrate, be formed at the suprabasil silicon oxide film of described Si, the W film that is placed on described silicon oxide film,
It is formed at the WO on W film3Nano wire film, it is overlying on WO3SnO on nano wire film2Nano thin-film, at SnO2On nano thin-film
Make two Pt electrodes and be positioned at the heating module below described Si substrate;Described WO3Nanowire length be 500~
8000nm。
Alarm the most according to claim 1, wherein, the preparation method of CO gas sensor comprises the steps:
Step one, preparation Si substrate:
Taking the silicon chip of certain size (5cm × 5cm), sequentially pass through acetone, ethanol, deionized water ultrasonic cleaning, ultrasonic time is equal
For 30min, then silicon chip is being put in oxidation furnace, thermal oxide at 1100 DEG C, obtain a layer thickness about 600nm at silicon chip surface
Silicon oxide film;
Step 2, prepares WO3Nano wire film:
Silicon chip through step one thermal oxide is put in magnetic control sputtering device, is evacuated to 2.0 × 10-3Hereinafter, magnetic control is then utilized
Sputtering technology, plates one layer of W film at silicon oxide surface, using as WO3The growth source of nano wire, magnetron sputtering power is 300W, W film
Thickness be 300nm, size is 3cm × 3cm;
Then silicon chip is put in tube furnace, at ambient pressure, be passed through the Ar gas of 20sccm, first stablize 1h, discharge in tube furnace
Air, following heated Tube-furnace to 380 DEG C, and is incubated 6h with the ramp of 10 DEG C/min, is incubated and complete makes it the coldest
But, after dropping to room temperature, take out silicon chip, obtain one layer of WO on the W film surface of silicon chip3Nano wire film;
Step 3, prepares SnO2Nano thin-film:
First, prepare 100ml deionized water, weigh 5g SnCl4·5H2O is dissolved in deionized water, adds 0.3g citric acid subsequently,
Heated solution to 53 DEG C, under magnetic stirring, ammonia to the pH value adding 0.5mol/L is 3, prepares Sn (OH)4Precipitate is heavy
Form sediment and stand 15h, remove removing chloride through repeatedly washing;Then 7g TiO is weighed2Nanoparticle, with precipitation mixed grinding 0.5h,
Form mixture precipitation, mixture precipitation is heated to 63 DEG C, add back dissolving in saturated oxalic acid, until precipitation is completely dissolved,
To transparent SnO2Colloidal sol, joins saturated for 10ml Polyethylene Glycol in vitreosol as surfactant, and puts into baking oven
Dry 20h, obtain SnO for 90 DEG C2Gel Precursor, by this SnO2Gel Precursor is roasting 1.5h at 580 DEG C, is adulterated
TiO2The SnO of nanoparticle2Nanometer powder;
Use terpineol and SnO2Nanometer powder mixes, and preparation becomes SnO2Slurry, and use the method for silk screen printing by SnO2Slurry
Material is coated in the WO of silicon chip3Nano wire film region, SnO2Slurry thickness is 2 μm, and silicon chip is dried at 100 DEG C 5min subsequently,
At WO3One layer of SnO of nano wire film area filling2Nano thin-film;
Step 4, preparation pt electrode:
This sensor electrode uses Pt electrode, utilizes magnetron sputtering to combine template at SnO2Pulp surface makes two Pt electrodes;
Described Pt electrode is added with Bi2O3Material and MgB2Material, described Bi2O3The addition of material is 0.01wt%~0.1wt%,
Described MgB2The addition of material is 0.005wt%~0.05wt%.
Step 5, assembling CO gas sensor:
Wire and two Pt electrodes are connected, at Si backside of substrate, heating module and the shell mechanism of sensor is installed.
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Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11183420A (en) * | 1997-12-17 | 1999-07-09 | Fuji Electric Co Ltd | Thin film gas sensor |
CN101168472A (en) * | 2006-10-24 | 2008-04-30 | 北京有色金属研究总院 | Leadless platinum electrode slurry and manufacturing method thereof |
CN101285705A (en) * | 2008-04-18 | 2008-10-15 | 中国石油大学(北京) | Infrared detector |
CN101493430A (en) * | 2009-02-17 | 2009-07-29 | 武汉工程大学 | Hydrogen sulfide gas sensitive, preparation, and method for making hydrogen sulfide gas sensitive device |
CN101726956A (en) * | 2009-11-18 | 2010-06-09 | 华东师范大学 | Novel unit module for solar-powered self-driven electronic paper apparatus and method for preparing same |
CN101770869A (en) * | 2010-02-09 | 2010-07-07 | 新奥科技发展有限公司 | Method for preparing titanium dioxide films for dye-sensitized solar battery |
CN102254695A (en) * | 2011-04-22 | 2011-11-23 | 南京工业大学 | Dye-sensitized nanocrystalline thin film solar cell with light trapping structure |
CN102358938A (en) * | 2011-07-14 | 2012-02-22 | 中山大学 | New method for synthesizing patterned single-crystal tungsten oxide nanowire arrays with catalyst localization technology |
CN102610862A (en) * | 2012-03-16 | 2012-07-25 | 浙江大学 | Preparation method for lithium battery taking polypyrrole-coated magnesium borate as anode material |
CN103818986A (en) * | 2014-02-14 | 2014-05-28 | 浙江工商大学 | Photocatalytic electrode responding to visible lights and application thereof on chromium-containing wastewater treatment |
CN104569061A (en) * | 2015-01-26 | 2015-04-29 | 苏州纳格光电科技有限公司 | Metal oxide semiconductor gas sensor and preparation method thereof |
-
2016
- 2016-06-15 CN CN201610429884.1A patent/CN106124572A/en active Pending
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11183420A (en) * | 1997-12-17 | 1999-07-09 | Fuji Electric Co Ltd | Thin film gas sensor |
CN101168472A (en) * | 2006-10-24 | 2008-04-30 | 北京有色金属研究总院 | Leadless platinum electrode slurry and manufacturing method thereof |
CN101285705A (en) * | 2008-04-18 | 2008-10-15 | 中国石油大学(北京) | Infrared detector |
CN101493430A (en) * | 2009-02-17 | 2009-07-29 | 武汉工程大学 | Hydrogen sulfide gas sensitive, preparation, and method for making hydrogen sulfide gas sensitive device |
CN101726956A (en) * | 2009-11-18 | 2010-06-09 | 华东师范大学 | Novel unit module for solar-powered self-driven electronic paper apparatus and method for preparing same |
CN101770869A (en) * | 2010-02-09 | 2010-07-07 | 新奥科技发展有限公司 | Method for preparing titanium dioxide films for dye-sensitized solar battery |
CN102254695A (en) * | 2011-04-22 | 2011-11-23 | 南京工业大学 | Dye-sensitized nanocrystalline thin film solar cell with light trapping structure |
CN102358938A (en) * | 2011-07-14 | 2012-02-22 | 中山大学 | New method for synthesizing patterned single-crystal tungsten oxide nanowire arrays with catalyst localization technology |
CN102610862A (en) * | 2012-03-16 | 2012-07-25 | 浙江大学 | Preparation method for lithium battery taking polypyrrole-coated magnesium borate as anode material |
CN103818986A (en) * | 2014-02-14 | 2014-05-28 | 浙江工商大学 | Photocatalytic electrode responding to visible lights and application thereof on chromium-containing wastewater treatment |
CN104569061A (en) * | 2015-01-26 | 2015-04-29 | 苏州纳格光电科技有限公司 | Metal oxide semiconductor gas sensor and preparation method thereof |
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