CN105866194A - Electric cabinet capable of achieving CO alarming - Google Patents

Abstract

The invention relates to an electric cabinet capable of achieving CO alarming. The electric cabinet is provided with a CO gas sensor, and the CO gas sensor comprises a Si substrate, a silicon oxide film formed on the Si substrate, a W film arranged on the silicon oxide film, a WO3 nanowire film formed on the W film, a SnO2 nano-film arranged on the WO3 nanowire film in a covering mode, two Pt electrodes made on the SnO2 nano-film and a heating module located on the Si substrate. The electric cabinet is high in sensitivity to CO gas, short in response time and good in repeatability and stability.

Description

A kind of electric power cabinet realizing CO warning

Technical field

The application relates to electric power cabinet field, particularly relates to a kind of electric power cabinet realizing CO warning.

Background technology

Electric power cabinet is a kind of cabinet shell laying electronic equipment, and generally steel construction is square, lands Place, lay various power module in it, and connected by wiring.

Owing in electric power cabinet, place apparatus relates to the safety of electricity consumption and unimpeded, accordingly, it would be desirable to ensure it Uninterrupted normal work, but, owing to placing the impact of environment, it inevitably contacts danger Property gas, such as CO etc., but, general electric power cabinet does not possess the power of test of this kind of gas, at gas In the case of body is revealed, it is impossible to ensure normal work and personal security.

Summary of the invention

For overcoming problem present in correlation technique, the application provides a kind of and realizes the electricity that CO reports to the police Power cabinet.

The present invention is achieved through the following technical solutions: a kind of electric power cabinet realizing CO warning, this electricity Power cabinet is provided with CO gas sensor；Described CO gas sensor includes Si substrate, is formed at institute The W film that state the suprabasil silicon oxide film of Si, is placed on described silicon oxide film, it is formed at W film On WO₃Nano wire film, it is overlying on WO₃SnO on nano wire film₂Nano thin-film, at SnO₂ On nano thin-film make two Pt electrodes and be positioned at the heating module below described Si substrate；Described WO₃Nanowire length is 500～5000nm.

Preferably, the preparation method of CO gas sensor comprises the steps:

Step one, preparation Si substrate:

Take the silicon chip of certain size (5cm × 5cm), sequentially pass through acetone, ethanol, deionized water Ultrasonic cleaning, ultrasonic time is 30min, is then putting in oxidation furnace by silicon chip, at 1100 DEG C Thermal oxide, obtains the silicon oxide film of a layer thickness about 600nm at silicon chip surface；

Step 2, prepares WO₃Nano wire film:

Silicon chip through step one thermal oxide is put in magnetic control sputtering device, is evacuated to 2.0 × 10^-3Hereinafter, Then utilize magnetron sputtering technique, plate one layer of W film at silicon oxide surface, using as WO₃Nano wire Growth source, magnetron sputtering power be the thickness of 300W, W film be 300nm, size is 3cm × 3 cm；

Then silicon chip is put in tube furnace, at ambient pressure, be passed through the Ar gas of 20sccm, the most steady Determining 1h, discharge the air in tube furnace, following heated Tube-furnace is with the ramp of 10 DEG C/min To 380 DEG C, and it is incubated 6h, is incubated complete its natural cooling that allows, after dropping to room temperature, take out silicon chip, One layer of WO is obtained on the W film surface of silicon chip₃Nano wire film；

Step 3, prepares SnO₂Nano thin-film:

First, prepare 100ml deionized water, weigh 5g SnCl₄·5H₂O is dissolved in deionized water, with Rear interpolation 0.3g citric acid, heated solution to 53 DEG C, under magnetic stirring, add 0.5mol/L's Ammonia to pH value is 3, prepares Sn (OH)₄Precipitate, precipitation stands 15h, through repeatedly washing Remove removing chloride；Then 7g TiO is weighed₂Nanoparticle, with precipitation mixed grinding 0.5h, is formed mixed Compound precipitates, and mixture precipitation is heated to 63 DEG C, adds back dissolving in saturated oxalic acid, until precipitation It is completely dissolved, obtains transparent SnO₂Colloidal sol, using saturated for 10ml Polyethylene Glycol as surfactant Join in vitreosol, and put into 90 DEG C of baking oven drying 20h, obtain SnO₂Gel Precursor, By this SnO₂Gel Precursor is roasting 1.5h at 580 DEG C, obtains the TiO that adulterates₂Nanoparticle SnO₂Nanometer powder；

Use terpineol and SnO₂Nanometer powder mixes, and preparation becomes SnO₂Slurry, and use silk screen The method of printing is by SnO₂Slurry is coated in the WO of silicon chip₃Nano wire film region, SnO₂Slurry is thick Degree is 2 μm, silicon chip is dried at 100 DEG C 5min subsequently, at WO₃Nano wire film region Fill one layer of SnO₂Nano thin-film；

Step 4, preparation pt electrode:

This sensor electrode uses Pt electrode, utilizes magnetron sputtering to combine template at SnO₂Slurry table Face makes two Pt electrodes；Described Pt electrode is added with Bi₂O₃Material and MgB₂Material, described Bi₂O₃The addition of material is 0.01wt%～0.1wt%, described MgB₂The addition of material is 0.005wt%～0.05wt%.

Step 5, assembling CO gas sensor:

Wire and two Pt electrodes are connected, at Si backside of substrate, heating module and sensor is installed Shell mechanism.

The technical scheme that embodiments herein provides can include following beneficial effect:

(1) a kind of electric power cabinet realizing CO warning that embodiments herein is provided, its peace Equipped with CO gas sensor, and this CO gas sensor is based on SnO₂The resistor-type of nano material CO sensor, passes through WO₃Nano wire and SnO₂The combination of nano material, enhances CO gas The aspect effects such as selectivity that CO is detected by sensor, stability；CO gas sensor is at WO₃ On the basis of nano wire film, coat one layer of SnO₂Nano material, is filled in space between nano wire, Due to WO₃Nano wire has bigger specific surface area so that itself and SnO₂Nano material contact area Substantially increase, WO₃Nano wire makees catalyst and substantially increases SnO₂Sensitivity and selection to CO Property, and then improve the sensitivity of electric power cabinet.

(2) a kind of electric power cabinet realizing CO warning that embodiments herein is provided, due to The CO gas sensor that it uses uses SnO₂Nano material is prepared by sol-gal process, and SnO₂ Nano material increases with the contact area of gas, and then improves SnO₂The nano material suction to gas Attached ability, simultaneously because doping TiO₂Nanoparticle, it is possible to promote material surface oxonium ion and reproducibility The reaction of gas CO, and then improve the sensor sensitivity to CO.

Aspect and advantage that the application adds will part be given in the following description, and part will be from following Description in become obvious, or recognized by the practice of the application.It should be appreciated that above It is only exemplary and explanatory that general description and details hereinafter describe, and can not limit the application.

Accompanying drawing explanation

Accompanying drawing herein is merged in description and constitutes the part of this specification, it is shown that meet this Inventive embodiment, and for explaining the principle of the present invention together with description.

Fig. 1 is the structural representation of the CO gas sensor of the present invention.Wherein: 01-Si substrate, 02- Silicon oxide film, 03-W film, 04-WO₃Nano wire film, 05-SnO₂Nano thin-film, 06-Pt electricity Pole, 07-heating module.

Fig. 2 is to prepare CO gas sensor flow chart.

Detailed description of the invention

Here will illustrate exemplary embodiment in detail, its example represents in the accompanying drawings.Below Description when relating to accompanying drawing, unless otherwise indicated, the same numbers in different accompanying drawings represents identical or phase As key element.Embodiment described in following exemplary embodiment does not represent and present invention phase one The all embodiments caused.On the contrary, they only with as appended claims describes in detail, this The example of the consistent apparatus and method of some aspects of invention.

Following disclosure provides many different embodiments or example for realizing the difference of the application Structure.In order to simplify disclosure herein, hereinafter parts and setting to specific examples are described. Certainly, they are the most merely illustrative, and are not intended to limit the application.Additionally, the application is permissible Repeat reference numerals and/or letter in different examples.This repetition is to simplify and clearly mesh , itself it is more than the relation between various embodiment being discussed and/or arranging.Additionally, the application The various specific technique provided and the example of material, but those of ordinary skill in the art can anticipate Know the applicability to other techniques and/or the use of other materials.It addition, described below first is special Levy Second Eigenvalue " on " structure can include what the first and second features were formed as directly contacting Embodiment, it is also possible to include the embodiment that other feature is formed between the first and second features, this Sample the first and second feature is not likely to be directly contact.

In the description of the present application, it should be noted that unless otherwise prescribed and limit, term " peace Dress ", should be interpreted broadly " being connected ", " connection ", for example, it may be mechanical connection or electrically connect, also Can be the connection of two element internals, can be to be joined directly together, it is also possible to indirect by intermediary It is connected, for the ordinary skill in the art, above-mentioned term can be understood as the case may be Concrete meaning.

At present, sensor technology has become as the pith of modern development in science and technology, itself and computer skill Three broad aspect of art, communication technology composition modern information technologies.Report to the police based on gas detecting and identification Gas sensor is an important branch of sensor.In breed of crop, beverage industry, food work The aspects such as industry, atmospheric monitoring, commercial production, sensor plays the most important effect.

CO gas is a kind of gas harmful to human body and environmental toxic.When people suck a small amount of CO After, its easily in blood haemachrome be combined and form stable associated complex, cause hemoglobin to lose defeated Sending the ability of oxygen, eventually cause tissue anoxia, the lighter produces the symptoms such as headache, vomiting, sternly Severe one can cause brain injury or death.

In productive life, the source of CO is a lot.In coke plant, steel mill, chemical plant etc., behaviour Being likely to be exposed in high concentration CO gas as personnel, family's coal heating, the accident of terminal coal gas are let out Dew, scene of fire etc. also can produce a large amount of CO, easily cause the poisoning of people.It addition, CO It is a kind of inflammable and explosive gas simultaneously, can occur when CO content is at 12%～74% in air Blast.

The sensor being currently based on CO gas detecting mainly has MOS type, electrochemistry Type, solid electrolyte type, catalytic combustion type etc., it is steady that MOS type sensor has heat Qualitative good, low cost, components and parts make the advantages such as simple, have become as the class sensing that research is more Device.

Stannum is a kind of common elements, is positioned at IVA race in periodic chart, and it can be combined into multiple oxygen with oxygen Compound, wherein, SnO₂It is most stable of.SnO₂Belong to a kind of typical wide bandgap semiconductor metal Oxide, due to self crystal structure, surface characteristic and characterization of adsorption etc., SnO₂At gas sensing The fields such as device, solaode, electrochemistry are widely used.SnO₂As a kind of important air-sensitive Sensor sensing material, has the advantages such as response is sensitive, cost of manufacture is low, technological process is simple, warp It is commonly used for the detection of reducibility gas.

The probe gas principle of MOS type gas sensor be based on sensing element with The interaction of object gas.Metal-oxide semiconductor (MOS) for gas have stronger physically or chemically Absorbability, when it is with air contact, it is quick that the oxygen in air can be adsorbed in metal-oxide semiconductor (MOS) The surface of sense material, and interact with sensitive material, produce negative oxygen ion；When contact reproducibility gas After body, reducibility gas reacts with the negative oxygen ion on this sensitive material surface, causes quasiconductor sensitivity material Material carrier concentration becomes big, thus causes this sensitive material electrical conductivity to become big, and resistance declines, based on quick The change of sense material electrical properties, it is achieved the detection to reducibility gas.

MOS type gas sensor have corrosion-resistant, cost of manufacture is low, Cleaning Principle The advantage such as simple, but, existing metal oxide semiconductor sensor based on CO gas detecting is still There is the problems such as selectivity, less stable, response be the sensitiveest.

Embodiment one:

Embodiments herein relates to a kind of electric power cabinet realizing CO warning, and this electric power cabinet is provided with CO gas sensor；As it is shown in figure 1, described CO gas sensor include Si substrate (01), It is formed at the silicon oxide film (02) on described Si substrate (01), is placed in described silicon oxide film (02) On W film (03), the WO that is formed on W film (03)₃Nano wire film (04), it is overlying on WO₃SnO on nano wire film (04)₂Nano thin-film (05), at SnO₂Nano thin-film (05) Two Pt electrodes (06) of upper making and be positioned at the heating module (07) below described Si substrate；Institute State WO₃Nanowire length is 500～5000nm.

Preferably, the preparation method such as Fig. 2, CO gas sensor comprises the steps:

Step one, preparation Si substrate:

Take the silicon chip of certain size (5cm × 5cm), sequentially pass through acetone, ethanol, deionized water Ultrasonic cleaning, ultrasonic time is 30min, is then putting in oxidation furnace by silicon chip, at 1100 DEG C Thermal oxide, obtains the silicon oxide film of a layer thickness about 600nm at silicon chip surface；

Step 2, prepares WO₃Nano wire film:

Silicon chip through step one thermal oxide is put in magnetic control sputtering device, is evacuated to 2.0 × 10^-3Hereinafter, Then utilize magnetron sputtering technique, plate one layer of W film at silicon oxide surface, using as WO₃Nano wire Growth source, magnetron sputtering power be the thickness of 300W, W film be 300nm, size is 3cm × 3 cm；

Then silicon chip is put in tube furnace, at ambient pressure, be passed through the Ar gas of 20sccm, the most steady Determining 1h, discharge the air in tube furnace, following heated Tube-furnace is with the ramp of 10 DEG C/min To 380 DEG C, and it is incubated 6h, is incubated complete its natural cooling that allows, after dropping to room temperature, take out silicon chip, One layer of WO is obtained on the W film surface of silicon chip₃Nano wire film；

Step 3, prepares SnO₂Nano thin-film:

First, prepare 100ml deionized water, weigh 5g SnCl₄·5H₂O is dissolved in deionized water, with Rear interpolation 0.3g citric acid, heated solution to 53 DEG C, under magnetic stirring, add 0.5mol/L's Ammonia to pH value is 3, prepares Sn (OH)₄Precipitate, precipitation stands 15h, through repeatedly washing Remove removing chloride；Then 7g TiO is weighed₂Nanoparticle, with precipitation mixed grinding 0.5h, is formed mixed Compound precipitates, and mixture precipitation is heated to 63 DEG C, adds back dissolving in saturated oxalic acid, until precipitation It is completely dissolved, obtains transparent SnO₂Colloidal sol, using saturated for 10ml Polyethylene Glycol as surfactant Join in vitreosol, and put into 90 DEG C of baking oven drying 20h, obtain SnO₂Gel Precursor, By this SnO₂Gel Precursor is roasting 1.5h at 580 DEG C, obtains the TiO that adulterates₂Nanoparticle SnO₂Nanometer powder；

Use terpineol and SnO₂Nanometer powder mixes, and preparation becomes SnO₂Slurry, and use silk screen The method of printing is by SnO₂Slurry is coated in the WO of silicon chip₃Nano wire film region, SnO₂Slurry is thick Degree is 2 μm, silicon chip is dried at 100 DEG C 5min subsequently, at WO₃Nano wire film region Fill one layer of SnO₂Nano thin-film；

Step 4, preparation pt electrode:

This sensor electrode uses Pt electrode, utilizes magnetron sputtering to combine template at SnO₂Slurry table Face makes two Pt electrodes；Described Pt electrode is added with Bi₂O₃Material and MgB₂Material, described Bi₂O₃The addition of material is 0.01wt%～0.1wt%, described MgB₂The addition of material is 0.005wt%～0.05wt%.

Step 5, assembling CO gas sensor:

Wire and two Pt electrodes are connected, at Si backside of substrate, heating module and sensor is installed Shell mechanism.

Preferably, the test system of described CO sensor is by gas dilution system, electrochemical workstation Composition, can realize the detection to minimum 1ppm gas, and the sample sensor made is put into test chamber, Discharging chamber air, two electrodes are connected with external electrical chem workstation, and test voltage is 10V.Pass Sensor response value is defined as: R=R0/Rg, and wherein R0 is material resistance in atmosphere, and Rg is material Resistance in certain concentration object gas, response time and recovery time are respectively response value and recovery Value reaches the time used during the 90% of balance.Found by test, in CO concentration for being respectively 200,500,1000,1500ppm time, this sensor response value corresponds to 14,21,41,72, H2 concentration be respectively 200,500,1000,1500ppm time, this sensor response value is corresponding It is 5,9,17,24, shows preferable CO selectivity；By the reperformance test of 2000 times, Under same concentrations CO, response value drops to original 93%, has good stability.

Test specification, the electric power cabinet installing this CO sensor is highly sensitive, repeated, stability is good Good, there is the biggest market application foreground.

Embodiment two:

Embodiments herein relates to a kind of electric power cabinet realizing CO warning, and this electric power cabinet is provided with CO gas sensor；As it is shown in figure 1, described CO gas sensor include Si substrate (01), It is formed at the silicon oxide film (02) on described Si substrate (01), is placed in described silicon oxide film (02) On W film (03), the WO that is formed on W film (03)₃Nano wire film (04), it is overlying on WO₃SnO on nano wire film (04)₂Nano thin-film (05), at SnO₂Nano thin-film (05) Two Pt electrodes (06) of upper making and be positioned at the heating module (07) below described Si substrate；Institute State WO₃Nanowire length is 500～6000nm.

Preferably, the preparation method such as Fig. 2, CO gas sensor comprises the steps:

Step one, preparation Si substrate:

Take the silicon chip of certain size (5cm × 5cm), sequentially pass through acetone, ethanol, deionized water Ultrasonic cleaning, ultrasonic time is 30min, is then putting in oxidation furnace by silicon chip, at 1100 DEG C Thermal oxide, obtains the silicon oxide film of a layer thickness about 600nm at silicon chip surface；

Step 2, prepares WO₃Nano wire film:

Silicon chip through step one thermal oxide is put in magnetic control sputtering device, is evacuated to 2.0 × 10^-3Hereinafter, Then utilize magnetron sputtering technique, plate one layer of W film at silicon oxide surface, using as WO₃Nano wire Growth source, magnetron sputtering power be the thickness of 300W, W film be 300nm, size is 3cm × 3 cm；

Then silicon chip is put in tube furnace, at ambient pressure, be passed through the Ar gas of 20sccm, the most steady Determining 1h, discharge the air in tube furnace, following heated Tube-furnace is with the ramp of 10 DEG C/min To 380 DEG C, and it is incubated 6h, is incubated complete its natural cooling that allows, after dropping to room temperature, take out silicon chip, One layer of WO is obtained on the W film surface of silicon chip₃Nano wire film；

Step 3, prepares SnO₂Nano thin-film:

First, prepare 100ml deionized water, weigh 35g SnCl₄·5H₂O is dissolved in deionized water, Add 0.3g citric acid, heated solution to 53 DEG C subsequently, under magnetic stirring, add 0.5mol/L Ammonia to pH value be 3, prepare Sn (OH)₄Precipitate, precipitation stands 15h, through repeatedly washing Wash removing chloride；Then 7g TiO is weighed₂Nanoparticle, with precipitation mixed grinding 0.5h, is formed Mixture precipitation, is heated to 63 DEG C by mixture precipitation, adds back dissolving in saturated oxalic acid, until heavy Shallow lake is completely dissolved, and obtains transparent SnO₂Colloidal sol, using saturated for 10ml Polyethylene Glycol as surface activity Agent joins in vitreosol, and puts into 90 DEG C of baking oven drying 20h, obtains SnO₂Gel Precursor, By this SnO₂Gel Precursor is roasting 1.5h at 580 DEG C, obtains the TiO that adulterates₂Nanoparticle SnO₂Nanometer powder；

Use terpineol and SnO₂Nanometer powder mixes, and preparation becomes SnO₂Slurry, and use silk screen The method of printing is by SnO₂Slurry is coated in the WO of silicon chip₃Nano wire film region, SnO₂Slurry is thick Degree is 2 μm, silicon chip is dried at 100 DEG C 5min subsequently, at WO₃Nano wire film region Fill one layer of SnO₂Nano thin-film；

Step 4, preparation pt electrode:

This sensor electrode uses Pt electrode, utilizes magnetron sputtering to combine template at SnO₂Slurry table Face makes two Pt electrodes；Described Pt electrode is added with Bi₂O₃Material and MgB₂Material, described Bi₂O₃The addition of material is 0.01wt%～0.1wt%, described MgB₂The addition of material is 0.005wt%～0.05wt%.

Step 5, assembling CO gas sensor:

Wire and two Pt electrodes are connected, at Si backside of substrate, heating module and sensor is installed Shell mechanism.

Preferably, the test system of described CO sensor is by gas dilution system, electrochemical workstation Composition, can realize the detection to minimum 1ppm gas, and the sample sensor made is put into test chamber, Discharging chamber air, two electrodes are connected with external electrical chem workstation, and test voltage is 10V.Pass Sensor response value is defined as: R=R0/Rg, and wherein R0 is material resistance in atmosphere, and Rg is material Resistance in certain concentration object gas, response time and recovery time are respectively response value and recovery Value reaches the time used during the 90% of balance.Found by test, in CO concentration for being respectively 200,500,1000,1500ppm time, this sensor response value corresponds to 9,36,41,62, H2 concentration be respectively 200,500,1000,1500ppm time, this sensor response value is corresponding It is 5,9,16,24, shows preferable CO selectivity；By the reperformance test of 2000 times, Under same concentrations CO, response value drops to original 93%, has good stability.

Test specification, the electric power cabinet installing this CO sensor is highly sensitive, repeated, stability is good Good, there is the biggest market application foreground.

Embodiment three:

Embodiments herein relates to a kind of electric power cabinet realizing CO warning, and this electric power cabinet is provided with CO gas sensor；As it is shown in figure 1, described CO gas sensor include Si substrate (01), It is formed at the silicon oxide film (02) on described Si substrate (01), is placed in described silicon oxide film (02) On W film (03), the WO that is formed on W film (03)₃Nano wire film (04), it is overlying on WO₃SnO on nano wire film (04)₂Nano thin-film (05), at SnO₂Nano thin-film (05) Two Pt electrodes (06) of upper making and be positioned at the heating module (07) below described Si substrate；Institute State WO₃Nanowire length is 500～7000nm.

Preferably, the preparation method such as Fig. 2, CO gas sensor comprises the steps:

Step one, preparation Si substrate:

Take the silicon chip of certain size (5cm × 5cm), sequentially pass through acetone, ethanol, deionized water Ultrasonic cleaning, ultrasonic time is 30min, is then putting in oxidation furnace by silicon chip, at 1100 DEG C Thermal oxide, obtains the silicon oxide film of a layer thickness about 600nm at silicon chip surface；

Step 2, prepares WO₃Nano wire film:

Silicon chip through step one thermal oxide is put in magnetic control sputtering device, is evacuated to 2.0 × 10^-3Hereinafter, Then utilize magnetron sputtering technique, plate one layer of W film at silicon oxide surface, using as WO₃Nano wire Growth source, magnetron sputtering power be the thickness of 300W, W film be 300nm, size is 3cm × 3 cm；

Then silicon chip is put in tube furnace, at ambient pressure, be passed through the Ar gas of 20sccm, the most steady Determining 1h, discharge the air in tube furnace, following heated Tube-furnace is with the ramp of 10 DEG C/min To 380 DEG C, and it is incubated 6h, is incubated complete its natural cooling that allows, after dropping to room temperature, take out silicon chip, One layer of WO is obtained on the W film surface of silicon chip₃Nano wire film；

Step 3, prepares SnO₂Nano thin-film:

First, prepare 100ml deionized water, weigh 5g SnCl₄·5H₂O is dissolved in deionized water, with Rear interpolation 0.3g citric acid, heated solution to 53 DEG C, under magnetic stirring, add 0.5mol/L's Ammonia to pH value is 5, prepares Sn (OH)₄Precipitate, precipitation stands 15h, through repeatedly washing Remove removing chloride；Then 7g TiO is weighed₂Nanoparticle, with precipitation mixed grinding 0.5h, is formed mixed Compound precipitates, and mixture precipitation is heated to 63 DEG C, adds back dissolving in saturated oxalic acid, until precipitation It is completely dissolved, obtains transparent SnO₂Colloidal sol, using saturated for 10ml Polyethylene Glycol as surfactant Join in vitreosol, and put into 90 DEG C of baking oven drying 20h, obtain SnO₂Gel Precursor, By this SnO₂Gel Precursor is roasting 1.5h at 580 DEG C, obtains the TiO that adulterates₂Nanoparticle SnO₂Nanometer powder；

Use terpineol and SnO₂Nanometer powder mixes, and preparation becomes SnO₂Slurry, and use silk screen The method of printing is by SnO₂Slurry is coated in the WO of silicon chip₃Nano wire film region, SnO₂Slurry is thick Degree is 4 μm, silicon chip is dried at 100 DEG C 5min subsequently, at WO₃Nano wire film region Fill one layer of SnO₂Nano thin-film；

Step 4, preparation pt electrode:

This sensor electrode uses Pt electrode, utilizes magnetron sputtering to combine template at SnO₂Slurry table Face makes two Pt electrodes；Described Pt electrode is added with Bi₂O₃Material and MgB₂Material, described Bi₂O₃The addition of material is 0.01wt%～0.1wt%, described MgB₂The addition of material is 0.005wt%～0.05wt%.

Step 5, assembling CO gas sensor:

Wire and two Pt electrodes are connected, at Si backside of substrate, heating module and sensor is installed Shell mechanism.

Preferably, the test system of described CO sensor is by gas dilution system, electrochemical workstation Composition, can realize the detection to minimum 1ppm gas, and the sample sensor made is put into test chamber, Discharging chamber air, two electrodes are connected with external electrical chem workstation, and test voltage is 10V.Pass Sensor response value is defined as: R=R0/Rg, and wherein R0 is material resistance in atmosphere, and Rg is material Resistance in certain concentration object gas, response time and recovery time are respectively response value and recovery Value reaches the time used during the 90% of balance.Found by test, in CO concentration for being respectively 200,500,1000,1500ppm time, this sensor response value corresponds to 14,29,41,72, H2 concentration be respectively 200,500,1000,1500ppm time, this sensor response value is corresponding It is 5,9,16,24, shows preferable CO selectivity；By the reperformance test of 2000 times, Under same concentrations CO, response value drops to original 88%, has good stability.

Test specification, the electric power cabinet installing this CO sensor is highly sensitive, repeated, stability is good Good, there is the biggest market application foreground.

Embodiment four:

Embodiments herein relates to a kind of electric power cabinet realizing CO warning, and this electric power cabinet is provided with CO gas sensor；As it is shown in figure 1, described CO gas sensor include Si substrate (01), It is formed at the silicon oxide film (02) on described Si substrate (01), is placed in described silicon oxide film (02) On W film (03), the WO that is formed on W film (03)₃Nano wire film (04), it is overlying on WO₃SnO on nano wire film (04)₂Nano thin-film (05), at SnO₂Nano thin-film (05) Two Pt electrodes (06) of upper making and be positioned at the heating module (07) below described Si substrate；Institute State WO₃Nanowire length is 500～8000nm.

Preferably, the preparation method such as Fig. 2, CO gas sensor comprises the steps:

Step one, preparation Si substrate:

Take the silicon chip of certain size (5cm × 5cm), sequentially pass through acetone, ethanol, deionized water Ultrasonic cleaning, ultrasonic time is 30min, is then putting in oxidation furnace by silicon chip, at 1100 DEG C Thermal oxide, obtains the silicon oxide film of a layer thickness about 600nm at silicon chip surface；

Step 2, prepares WO₃Nano wire film:

Silicon chip through step one thermal oxide is put in magnetic control sputtering device, is evacuated to 2.0 × 10^-3Hereinafter, Then utilize magnetron sputtering technique, plate one layer of W film at silicon oxide surface, using as WO₃Nano wire Growth source, magnetron sputtering power be the thickness of 300W, W film be 300nm, size is 3cm × 3 cm；

Then silicon chip is put in tube furnace, at ambient pressure, be passed through the Ar gas of 20sccm, the most steady Determining 1h, discharge the air in tube furnace, following heated Tube-furnace is with the ramp of 10 DEG C/min To 380 DEG C, and it is incubated 6h, is incubated complete its natural cooling that allows, after dropping to room temperature, take out silicon chip, One layer of WO is obtained on the W film surface of silicon chip₃Nano wire film；

Step 3, prepares SnO₂Nano thin-film:

First, prepare 100ml deionized water, weigh 5g SnCl₄·5H₂O is dissolved in deionized water, with Rear interpolation 0.3g citric acid, heated solution to 53 DEG C, under magnetic stirring, add 0.5mol/L's Ammonia to pH value is 3, prepares Sn (OH)₄Precipitate, precipitation stands 15h, through repeatedly washing Remove removing chloride；Then 7g TiO is weighed₂Nanoparticle, with precipitation mixed grinding 0.5h, is formed mixed Compound precipitates, and mixture precipitation is heated to 63 DEG C, adds back dissolving in saturated oxalic acid, until precipitation It is completely dissolved, obtains transparent SnO₂Colloidal sol, using saturated for 10ml Polyethylene Glycol as surfactant Join in vitreosol, and put into 90 DEG C of baking oven drying 20h, obtain SnO₂Gel Precursor, By this SnO₂Gel Precursor is roasting 1.5h at 580 DEG C, obtains the TiO that adulterates₂Nanoparticle SnO₂Nanometer powder；

Use terpineol and SnO₂Nanometer powder mixes, and preparation becomes SnO₂Slurry, and use silk screen The method of printing is by SnO₂Slurry is coated in the WO of silicon chip₃Nano wire film region, SnO₂Slurry is thick Degree is 2 μm, silicon chip is dried at 100 DEG C 5min subsequently, at WO₃Nano wire film region Fill one layer of SnO₂Nano thin-film；

Step 4, preparation pt electrode:

This sensor electrode uses Pt electrode, utilizes magnetron sputtering to combine template at SnO₂Slurry table Face makes two Pt electrodes；Described Pt electrode is added with Bi₂O₃Material and MgB₂Material, described Bi₂O₃The addition of material is 0.05wt%～0.1wt%, described MgB₂The addition of material is 0.005wt%～0.03wt%.

Step 5, assembling CO gas sensor:

Wire and two Pt electrodes are connected, at Si backside of substrate, heating module and sensor is installed Shell mechanism.

Preferably, the test system of described CO sensor is by gas dilution system, electrochemical workstation Composition, can realize the detection to minimum 1ppm gas, and the sample sensor made is put into test chamber, Discharging chamber air, two electrodes are connected with external electrical chem workstation, and test voltage is 10V.Pass Sensor response value is defined as: R=R0/Rg, and wherein R0 is material resistance in atmosphere, and Rg is material Resistance in certain concentration object gas, response time and recovery time are respectively response value and recovery Value reaches the time used during the 90% of balance.Found by test, in CO concentration for being respectively 200,500,1000,1500ppm time, this sensor response value corresponds to 14,29,41,72, H2 concentration be respectively 200,500,1000,1500ppm time, this sensor response value is corresponding It is 5,9,16,38, shows preferable CO selectivity；By the reperformance test of 2000 times, Under same concentrations CO, response value drops to original 93%, has good stability.

Test specification, the electric power cabinet installing this CO sensor is highly sensitive, repeated, stability is good Good, there is the biggest market application foreground.

Embodiment five:

Embodiments herein relates to a kind of electric power cabinet realizing CO warning, and this electric power cabinet is provided with CO gas sensor；As it is shown in figure 1, described CO gas sensor include Si substrate (01), It is formed at the silicon oxide film (02) on described Si substrate (01), is placed in described silicon oxide film (02) On W film (03), the WO that is formed on W film (03)₃Nano wire film (04), it is overlying on WO₃SnO on nano wire film (04)₂Nano thin-film (05), at SnO₂Nano thin-film (05) Two Pt electrodes (06) of upper making and be positioned at the heating module (07) below described Si substrate；Institute State WO₃Nanowire length is 500～9000nm.

Preferably, the preparation method such as Fig. 2, CO gas sensor comprises the steps:

Step one, preparation Si substrate:

Take the silicon chip of certain size (5cm × 5cm), sequentially pass through acetone, ethanol, deionized water Ultrasonic cleaning, ultrasonic time is 30min, is then putting in oxidation furnace by silicon chip, at 1100 DEG C Thermal oxide, obtains the silicon oxide film of a layer thickness about 600nm at silicon chip surface；

Step 2, prepares WO₃Nano wire film:

Silicon chip through step one thermal oxide is put in magnetic control sputtering device, is evacuated to 2.0 × 10^-3Hereinafter, Then utilize magnetron sputtering technique, plate one layer of W film at silicon oxide surface, using as WO₃Nano wire Growth source, magnetron sputtering power be the thickness of 300W, W film be 300nm, size is 3cm × 3 cm；

Then silicon chip is put in tube furnace, at ambient pressure, be passed through the Ar gas of 20sccm, the most steady Determining 1h, discharge the air in tube furnace, following heated Tube-furnace is with the ramp of 10 DEG C/min To 380 DEG C, and it is incubated 6h, is incubated complete its natural cooling that allows, after dropping to room temperature, take out silicon chip, One layer of WO is obtained on the W film surface of silicon chip₃Nano wire film；

Step 3, prepares SnO₂Nano thin-film:

First, prepare 100ml deionized water, weigh 5g SnCl₄·5H₂O is dissolved in deionized water, with Rear interpolation 0.3g citric acid, heated solution to 53 DEG C, under magnetic stirring, add 0.5mol/L's Ammonia to pH value is 3, prepares Sn (OH)₄Precipitate, precipitation stands 15h, through repeatedly washing Remove removing chloride；Then 7g TiO is weighed₂Nanoparticle, with precipitation mixed grinding 0.5h, is formed mixed Compound precipitates, and mixture precipitation is heated to 63 DEG C, adds back dissolving in saturated oxalic acid, until precipitation It is completely dissolved, obtains transparent SnO₂Colloidal sol, using saturated for 10ml Polyethylene Glycol as surfactant Join in vitreosol, and put into 90 DEG C of baking oven drying 20h, obtain SnO₂Gel Precursor, By this SnO₂Gel Precursor is roasting 1.5h at 580 DEG C, obtains the TiO that adulterates₂Nanoparticle SnO₂Nanometer powder；

Use terpineol and SnO₂Nanometer powder mixes, and preparation becomes SnO₂Slurry, and use silk screen The method of printing is by SnO₂Slurry is coated in the WO of silicon chip₃Nano wire film region, SnO₂Slurry is thick Degree is 2 μm, silicon chip is dried at 100 DEG C 5min subsequently, at WO₃Nano wire film region Fill one layer of SnO₂Nano thin-film；

Step 4, preparation pt electrode:

This sensor electrode uses Pt electrode, utilizes magnetron sputtering to combine template at SnO₂Slurry table Face makes two Pt electrodes；Described Pt electrode is added with Bi₂O₃Material and MgB₂Material, described Bi₂O₃The addition of material is 0.01wt%～0.1wt%, described MgB₂The addition of material is 0.005wt%～0.05wt%.

Step 5, assembling CO gas sensor:

Wire and two Pt electrodes are connected, at Si backside of substrate, heating module and sensor is installed Shell mechanism.

Preferably, the test system of described CO sensor is by gas dilution system, electrochemical workstation Composition, can realize the detection to minimum 1ppm gas, and the sample sensor made is put into test chamber, Discharging chamber air, two electrodes are connected with external electrical chem workstation, and test voltage is 10V.Pass Sensor response value is defined as: R=R0/Rg, and wherein R0 is material resistance in atmosphere, and Rg is material Resistance in certain concentration object gas, response time and recovery time are respectively response value and recovery Value reaches the time used during the 90% of balance.Found by test, in CO concentration for being respectively 200,500,1000,1500ppm time, this sensor response value corresponds to 14,29,41,68, H2 concentration be respectively 200,500,1000,1500ppm time, this sensor response value is corresponding It is 5,25,31,56, shows preferable CO selectivity；By the reperformance test of 2000 times, Under same concentrations CO, response value drops to original 93%, has good stability.

Test specification, the electric power cabinet installing this CO sensor is highly sensitive, repeated, stability is good Good, there is the biggest market application foreground.

Those skilled in the art, after considering description and putting into practice invention disclosed herein, will readily occur to Other embodiments of the present invention.The application is intended to any modification of the present invention, purposes or fits Answering property changes, and these modification, purposes or adaptations are followed the general principle of the present invention and wrap Include the undocumented common knowledge in the art of the application or conventional techniques means.Description and reality Executing example and be considered only as exemplary, true scope and spirit of the invention are referred to by claim below Go out.

It should be appreciated that the invention is not limited in essence described above and illustrated in the accompanying drawings Really structure, and various modifications and changes can carried out without departing from the scope.The scope of the present invention is only Limited by appended claim.

Claims (2)

1. can realize the electric power cabinet that CO reports to the police, this electric power cabinet is provided with CO gas sensor； Described CO gas sensor include Si substrate, be formed at the suprabasil silicon oxide film of described Si, The W film being placed on described silicon oxide film, the WO being formed on W film₃Nano wire film, it is overlying on WO₃SnO on nano wire film₂Nano thin-film, at SnO₂Two Pt made on nano thin-film Electrode and be positioned at the heating module below described Si substrate；Described WO₃Nanowire length is 500～5000nm.

Electric power cabinet the most according to claim 1, wherein, the preparation method of CO gas sensor Comprise the steps:

Step one, preparation Si substrate:

Take the silicon chip of certain size (5cm × 5cm), sequentially pass through acetone, ethanol, deionized water Ultrasonic cleaning, ultrasonic time is 30min, is then putting in oxidation furnace by silicon chip, at 1100 DEG C Thermal oxide, obtains the silicon oxide film of a layer thickness about 600nm at silicon chip surface；

Step 2, prepares WO₃Nano wire film:

Silicon chip through step one thermal oxide is put in magnetic control sputtering device, is evacuated to 2.0 × 10^-3Hereinafter, Then utilize magnetron sputtering technique, plate one layer of W film at silicon oxide surface, using as WO₃Nano wire Growth source, magnetron sputtering power be the thickness of 300W, W film be 300nm, size is 3cm × 3 cm；

Then silicon chip is put in tube furnace, at ambient pressure, be passed through the Ar gas of 20sccm, the most steady Determining 1h, discharge the air in tube furnace, following heated Tube-furnace is with the ramp of 10 DEG C/min To 380 DEG C, and it is incubated 6h, is incubated complete its natural cooling that allows, after dropping to room temperature, take out silicon chip, One layer of WO is obtained on the W film surface of silicon chip₃Nano wire film；

Step 3, prepares SnO₂Nano thin-film:

First, prepare 100ml deionized water, weigh 5g SnCl₄·5H₂O is dissolved in deionized water, with Rear interpolation 0.3g citric acid, heated solution to 53 DEG C, under magnetic stirring, add 0.5mol/L's Ammonia to pH value is 3, prepares Sn (OH)₄Precipitate, precipitation stands 15h, through repeatedly washing Remove removing chloride；Then 7g TiO is weighed₂Nanoparticle, with precipitation mixed grinding 0.5h, is formed mixed Compound precipitates, and mixture precipitation is heated to 63 DEG C, adds back dissolving in saturated oxalic acid, until precipitation It is completely dissolved, obtains transparent SnO₂Colloidal sol, using saturated for 10ml Polyethylene Glycol as surfactant Join in vitreosol, and put into 90 DEG C of baking oven drying 20h, obtain SnO₂Gel Precursor, By this SnO₂Gel Precursor is roasting 1.5h at 580 DEG C, obtains the TiO that adulterates₂Nanoparticle SnO₂Nanometer powder；

Use terpineol and SnO₂Nanometer powder mixes, and preparation becomes SnO₂Slurry, and use silk screen The method of printing is by SnO₂Slurry is coated in the WO of silicon chip₃Nano wire film region, SnO₂Slurry is thick Degree is 2 μm, silicon chip is dried at 100 DEG C 5min subsequently, at WO₃Nano wire film region Fill one layer of SnO₂Nano thin-film；

Step 4, preparation pt electrode:

This sensor electrode uses Pt electrode, utilizes magnetron sputtering to combine template at SnO₂Slurry table Face makes two Pt electrodes；Described Pt electrode is added with Bi₂O₃Material and MgB₂Material, described Bi₂O₃The addition of material is 0.01wt%～0.1wt%, described MgB₂The addition of material is 0.005wt%～0.05wt%.

Step 5, assembling CO gas sensor:

Wire and two Pt electrodes are connected, at Si backside of substrate, heating module and sensor is installed Shell mechanism.