CN106111980A - A kind of preparation method of nano wire - Google Patents

A kind of preparation method of nano wire Download PDF

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Publication number
CN106111980A
CN106111980A CN201610488065.4A CN201610488065A CN106111980A CN 106111980 A CN106111980 A CN 106111980A CN 201610488065 A CN201610488065 A CN 201610488065A CN 106111980 A CN106111980 A CN 106111980A
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Prior art keywords
glass
glass tubing
preparation
fluxing technique
tubing
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CN201610488065.4A
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CN106111980B (en
Inventor
赵杨勇
李慧
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Zhejiang benfeng science and Technology Co., Ltd.
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Suzhou New World Nanometer Technology Co Ltd
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Priority to CN201610488065.4A priority Critical patent/CN106111980B/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/16Metallic particles coated with a non-metal
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05Metallic powder characterised by the size or surface area of the particles
    • B22F1/054Nanosized particles
    • B22F1/0547Nanofibres or nanotubes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00Making metallic powder or suspensions thereof
    • B22F9/02Making metallic powder or suspensions thereof using physical processes
    • B22F9/06Making metallic powder or suspensions thereof using physical processes starting from liquid material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Surface Treatment Of Glass Fibres Or Filaments (AREA)

Abstract

The present invention relates to the preparation method of a kind of nano wire, its preparation method is as follows: the first passage is to be placed on bottom glass tubing by metal or semi-conducting material, to glass tubing bottom-heated, when material molten in glass tubing, when bottom glass pipe softens, go out microfilament from the glass tubing bottom traction softened, obtain the glass fluxing technique silk material that a core diameter is A;Second passage is for be placed on inside glass tubing by above-mentioned gained glass fluxing technique silk material bunchy, then the operation of the first passage is repeated, obtain the glass fluxing technique silk material that a core diameter is B, and the numeric ratio A of B is little, then according to actual demand design wire drawing road number of times, finally give the glass fluxing technique nano wire that a core diameter is C, and the numeric ratio B of C is little, 3rd passage be by silk material in Fluohydric acid. after erosion surface glass, available one-dimensional metal or semiconductor nanowires, the present invention is simple, the nano wire of various material composition can be prepared, and the nanowire diameter uniform, controllable of preparation, it is applied in sensor and electronic industrial products.

Description

A kind of preparation method of nano wire
Technical field
The invention belongs to nanowire technique field, particularly relate to the preparation method of a kind of nano wire.
Background technology
Nano wire belongs to monodimension nanometer material, has quantum size effect, skin effect, quantum tunneling effect, dielectric limit Territory effect etc., thus cause being different from the macro properties such as the power of conventional blocks material, heat, optical, electrical, magnetic.Nano wire is because having machine Tool intensity is high, the advantages such as specific surface area is big, demonstrates wide at aspects such as catalyst, solar energy conversion, flexible touch screens Application prospect.
The preparation method of nano wire has by suspension method, vapor growth method, sedimentation, template etc. at present, but in reality Use in find, nano wire normal length prepared by these methods only has tens microns, it is also possible to raw in preparation process Becoming nano-particle, the uniformity of nanowire diameter also can not get ensureing.
Summary of the invention
The invention aims to overcome the deficiencies in the prior art to provide a kind of being suitable for prepare various metal and quasiconductor Nano wire, and the preparation method of the nano wire of length overlength, uniform diameter.
For reaching above-mentioned purpose, the technical solution used in the present invention is: the preparation method of a kind of nano wire, it is characterised in that: bag Include following steps:
Step 1: metal or semi-conducting material are put into bottom glass tubing;
Step 2: the center of heater will be placed on bottom glass tubing, to glass tubing bottom-heated;
Step 3: when bottom glass pipe softens, in glass tubing during material molten, go out microfilament from the glass tubing bottom traction softened, To the glass fluxing technique silk material that silk core diameter is A;
Step 4: be placed on inside glass tubing by the glass fluxing technique silk material bunchy of gained in step 3, then repeats step 2 and 3, To the glass fluxing technique silk material that silk core diameter is B, and the numerical value of B is less than A;
Step 5: design wire drawing road number of times according to the actual requirements, repeats step 2 and 3, finally gives the glass bag that a core diameter is C Cover nanometer filament material, and the numerical value of C is less than B;
Step 6: glass fluxing technique nanometer filament material after erosion surface glass, is obtained one-dimensional metal or quasiconductor is received in Fluohydric acid. Rice noodle.
Preferably, the material of described glass tubing is high-boron-silicon glass or quartz glass.
Preferably, described mode of heating is sensing heating or resistance heating.
Due to the utilization of technique scheme, the present invention compared with prior art has the advantage that
The preparation method of the nano wire of the present invention program, its preparation method is simple, can prepare the nanometer of various material composition Line, and nanowire length is up to several meters, even goes up km, the nanowire diameter uniform, controllable simultaneously prepared, it is also possible to by control Wire drawing road number of times processed and every a time wire drawing speed, obtain the nano wire of different-diameter, be widely used in sensor and electronics work In industry product.
Accompanying drawing explanation
Below in conjunction with the accompanying drawings technical solution of the present invention is described further:
Accompanying drawing 1 prepares schematic diagram for the present invention the first passage glass fluxing technique silk material flow process;
Accompanying drawing 2 prepares schematic diagram for the present invention the second passage and back pass flow process;
Wherein: 1, raw material;2, firing equipment;3, glass tubing;4, glass fluxing technique silk material;5, glass fluxing technique nanometer filament material.
Detailed description of the invention
Below in conjunction with the accompanying drawings and specific embodiment the present invention is described in further detail.
The preparation method of the of the present invention a kind of nano wire as shown in accompanying drawing 1-2, comprises the steps:
Step 1: metal or semi-conducting material are put into bottom glass tubing;
Step 2: the center of heater will be placed on bottom glass tubing, to glass tubing bottom-heated;
Step 3: when bottom glass pipe softens, in glass tubing during material molten, go out microfilament from the glass tubing bottom traction softened, To the glass fluxing technique silk material that silk core diameter is A;
Step 4: be placed on inside glass tubing by the glass fluxing technique silk material bunchy of gained in step 3, then repeats step 2 and 3, To the glass fluxing technique silk material that silk core diameter is B, and the numerical value of B is less than A;
Step 5: design wire drawing road number of times according to the actual requirements, repeats step 2 and 3, finally gives the glass bag that a core diameter is C Cover nanometer filament material, and the numerical value of C is less than B;
Step 6: glass fluxing technique nanometer filament material after erosion surface glass, is obtained one-dimensional metal or quasiconductor is received in Fluohydric acid. Rice noodle;The material of described glass tubing is high-boron-silicon glass or quartz glass;Described mode of heating is sensing heating or resistance Heating.
Wherein, when bottom glass pipe softens, during material molten in glass tubing, the most advanced and sophisticated Glass rod of band can be used from soft The glass tubing bottom traction changed goes out microfilament, naturally it is also possible to uses alternate manner to take out, only need to guarantee microfilament from softening Taking-up complete bottom glass tubing.
Embodiment one:
The present embodiment material therefor is silver, and preparation process is as follows: first the 2g little block material of silver is put into internal diameter 8mm, wall thickness 1mm's Bottom Pyrex high-boron-silicon glass pipe, the center of heater will be placed on bottom glass tubing, to glass tubing bottom-heated;Such as accompanying drawing 1 Shown in, when temperature is heated to about 1000 C, bottom glass pipe softens, when in glass tubing, silver is melted, now with preparing in advance The Glass rod at good band tip goes out microfilament from the glass tubing bottom traction softened, and obtains the silk core diameter after the first passage wire drawing about The glass fluxing technique silk material of 35 m;Then glass fluxing technique silk material is cut off the microfilament into long 10cm, the 500 above-mentioned microfilament boundlings of bundle are put Put in the Pyrex high-boron-silicon glass pipe of internal diameter 5mm;As shown in Figure 2, the center of heater will be placed on bottom glass tubing, To glass tubing bottom-heated, when temperature is heated to about 1000 C, bottom glass pipe softens, sharper with preprepared band The Glass rod of end goes out microfilament from the glass tubing bottom traction softened, and obtains the silk core diameter about 720nm's after the second passage wire drawing Glass fluxing technique silk material;Then repeat the above steps, after the 3rd passage wire drawing, the glass fluxing technique silver obtaining a core diameter about 34nm is received Rice noodle silk material, finally after erosion surface glass, can get one-dimensional diameter about by glass fluxing technique silver nanoparticle filament material in Fluohydric acid. The nano silver wire of 34nm.
Embodiment two:
The present embodiment material therefor is semi-conducting material germanium, and preparation process is as follows: little for 1.5g germanium block material is put into internal diameter Bottom the Pyrex high-boron-silicon glass pipe of 8mm, wall thickness 1mm, the center of heater will be placed on bottom glass tubing, at the bottom of glass tubing Portion heats.As shown in Figure 1, when temperature is heated to about 1000 C, bottom glass pipe softens, when in glass tubing, germanium melts, Now go out microfilament with the Glass rod that preprepared band is most advanced and sophisticated from the glass tubing bottom traction softened, obtain the first passage wire drawing After the glass fluxing technique silk material of silk core diameter about 42 m;Then glass fluxing technique silk material is cut off the microfilament into long 10cm, restraint 500 Above-mentioned microfilament boundling is placed in the Pyrex high-boron-silicon glass pipe of internal diameter 5mm.As shown in Figure 2, it is placed on bottom glass tubing The center of heater, to glass tubing bottom-heated.When temperature is heated to about 1000 C, bottom glass pipe softens, with in advance The Glass rod at ready band tip goes out microfilament from the glass tubing bottom traction softened, and obtains the silk core after the second passage wire drawing straight The glass fluxing technique silk material of footpath about 840nm;Then repeat the above steps, after the 3rd passage wire drawing, obtains a core diameter about 42nm's Glass fluxing technique Ge nanoline silk material, finally after erosion surface glass, can obtain glass fluxing technique Ge nanoline silk material in Fluohydric acid. Ge nanoline to one-dimensional diameter about 42nm.
Embodiment three:
The present embodiment material therefor is copper-phosphorus alloy, and preparation process is as follows: little for 1.5g copper-phosphorus alloy block material is put into internal diameter Bottom the Pyrex high-boron-silicon glass pipe of 8mm, wall thickness 1mm, the center of heater will be placed on bottom glass tubing, at the bottom of glass tubing Portion heats.As shown in Figure 1, when temperature is heated to about 900 C, bottom glass pipe softens, and in glass tubing, copper-phosphorus alloy melts When melting, now go out microfilament with the Glass rod that preprepared band is most advanced and sophisticated from the glass tubing bottom traction softened, obtain first The glass fluxing technique silk material of silk core diameter 20 m after secondary wire drawing, then cuts off the microfilament into long 10cm by glass fluxing technique silk material, will 500 restraint above-mentioned microfilament boundling is placed in the Pyrex high-boron-silicon glass pipe of internal diameter 5mm.As shown in Figure 2, by bottom glass tubing Being placed on the center of heater, to glass tubing bottom-heated, when temperature is heated to about 900 C, bottom glass pipe softens, then The Glass rod most advanced and sophisticated with preprepared band goes out microfilament, after obtaining the second passage wire drawing from the glass tubing bottom traction softened The glass fluxing technique silk material of silk core diameter about 440nm;Then repeat the above steps, after the 3rd passage wire drawing, obtains a core diameter about The glass fluxing technique copper phosphorus nanometer filament material of 24nm, finally by glass fluxing technique copper phosphorus nanometer filament material erosion surface glass in Fluohydric acid. After glass, the copper phosphorus nano wire of available one-dimensional diameter about 24nm.
The preparation method of the nano wire of the present invention, its preparation method is simple, can prepare the nanometer of various material composition Line, and nanowire length is up to several meters, even goes up km, the nanowire diameter uniform, controllable simultaneously prepared, it is also possible to by control Wire drawing road number of times processed and every a time wire drawing speed, obtain the nano wire of different-diameter, be widely used in sensor and electronics work In industry product.
Below it is only the concrete exemplary applications of the present invention, protection scope of the present invention is not constituted any limitation.All employings The technical scheme that equivalents or equivalence are replaced and formed, within the scope of all falling within rights protection of the present invention.

Claims (3)

1. the preparation method of a nano wire, it is characterised in that: comprise the steps:
Step 1: metal or semi-conducting material are put into bottom glass tubing;
Step 2: the center of heater will be placed on bottom glass tubing, to glass tubing bottom-heated;
Step 3: when bottom glass pipe softens, in glass tubing during material molten, go out microfilament from the glass tubing bottom traction softened, To the glass fluxing technique silk material that silk core diameter is A;
Step 4: be placed on inside glass tubing by the glass fluxing technique silk material bunchy of gained in step 3, then repeats step 2 and 3, To the glass fluxing technique silk material that silk core diameter is B, and the numerical value of B is less than A;
Step 5: design wire drawing road number of times according to the actual requirements, repeats step 2 and 3, finally gives the glass that a core diameter is C Cladding nanometer filament material, and the numerical value of C is less than B;
Step 6: glass fluxing technique nanometer filament material after erosion surface glass, is obtained one-dimensional metal or quasiconductor is received in Fluohydric acid. Rice noodle.
The preparation method of nano wire the most according to claim 1, it is characterised in that: the material of described glass tubing is high borosilicate Glass or quartz glass.
The preparation method of nano wire the most according to claim 1, it is characterised in that: described mode of heating for sensing heating or Person's resistance heats.
CN201610488065.4A 2016-06-29 2016-06-29 A kind of preparation method of nano wire Active CN106111980B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106735263A (en) * 2016-12-12 2017-05-31 厦门大学 The molten of metallic fiber takes out manufacture device and manufacture method
CN115732115A (en) * 2021-09-01 2023-03-03 三星电机株式会社 Nanowire bundle and method of manufacturing the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005248017A (en) * 2004-03-04 2005-09-15 Sanyo Chem Ind Ltd Hot melt composition for nonslip processing
CN103787575A (en) * 2014-02-26 2014-05-14 江门市新会区宇宏科技有限责任公司 Adjustable drawing device and drawing method
CN104894428A (en) * 2015-06-12 2015-09-09 北京科技大学 Copper-based hyperelastic shape memory alloy wire and preparation method thereof
CN105132750A (en) * 2015-09-18 2015-12-09 北京科技大学 Magnetic torsional Ni-Mn-Ga alloy wire

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005248017A (en) * 2004-03-04 2005-09-15 Sanyo Chem Ind Ltd Hot melt composition for nonslip processing
CN103787575A (en) * 2014-02-26 2014-05-14 江门市新会区宇宏科技有限责任公司 Adjustable drawing device and drawing method
CN104894428A (en) * 2015-06-12 2015-09-09 北京科技大学 Copper-based hyperelastic shape memory alloy wire and preparation method thereof
CN105132750A (en) * 2015-09-18 2015-12-09 北京科技大学 Magnetic torsional Ni-Mn-Ga alloy wire

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106735263A (en) * 2016-12-12 2017-05-31 厦门大学 The molten of metallic fiber takes out manufacture device and manufacture method
CN115732115A (en) * 2021-09-01 2023-03-03 三星电机株式会社 Nanowire bundle and method of manufacturing the same

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Effective date of registration: 20191210

Address after: 315000 A1-1, workshop 2, No. 96, mujin Road, hi tech Zone, Ningbo City, Zhejiang Province

Patentee after: Zhejiang benfeng science and Technology Co., Ltd.

Address before: 215100 science and Technology Pioneer Park, Kam Fengzhen Road, Zhangjiagang, Jiangsu, Suzhou

Patentee before: Suzhou new world Nanometer Technology Co., Ltd.

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