CN106100598A - A kind of variable gain amplifier - Google Patents
A kind of variable gain amplifier Download PDFInfo
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- CN106100598A CN106100598A CN201610379333.9A CN201610379333A CN106100598A CN 106100598 A CN106100598 A CN 106100598A CN 201610379333 A CN201610379333 A CN 201610379333A CN 106100598 A CN106100598 A CN 106100598A
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- 230000008859 change Effects 0.000 claims abstract description 40
- 230000007850 degeneration Effects 0.000 claims description 12
- 230000008901 benefit Effects 0.000 claims description 9
- 238000004088 simulation Methods 0.000 claims description 9
- 230000005611 electricity Effects 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
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- 230000003321 amplification Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000004899 motility Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3211—Modifications of amplifiers to reduce non-linear distortion in differential amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
- H03F3/45636—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedback means
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Abstract
The invention discloses a kind of variable gain amplifier, including gain control unit and phase compensation unit, wherein: described gain control unit includes one group or two group transistors, size for the bias voltage by changing each transistor in described a group or two group transistors, the size that each transistor exports electric current is controlled, to change the gain of described variable gain amplifier；Described phase compensation unit is for compensating the phase place of the output electric current of each transistor in described a group or two group transistors, so that the phase place of the output signal of described variable gain amplifier keeps constant.I.e., in this programme, phase compensating network can be increased by the input stage at variable gain amplifier, make variable gain amplifier under different gain-state, all can guarantee that the constant of output phase place, thus solve cannot realize existing for existing variable gain amplifier and under different gains, export the problem of phase-constant, improve the performance of variable gain amplifier.
Description
Technical field
The present invention relates to electronic technology field, particularly relate to a kind of variable gain amplifier.
Background technology
Owing to phased array system has strict requirements to the phase place of signal, thus, for applying in phased array system
For VGA (Variable Gain Amplfier, variable gain amplifier) circuit, it is except possessing the function of gain control
Outward, also need possess the function keeping exporting phase-constant under different gains state, otherwise can deteriorate phase shifting accuracy, impact systematicness
Energy.
At present, realize the effective of amplifier gain frequently with following two amplifier architecture in the industry to control:
The first, current steer (Current Steering) type variable gain amplifier.As it is shown in figure 1, wherein, I represents
Current source, R is pull-up resistor, Q0～Qn1, Q1N～Q2N represent transistor (such as audion or metal-oxide-semiconductor etc.).This amplifier
Operation principle can be: by controlling conducting and the cut-off of each bank tube (such as Q0～Q2N) altogether in this amplifier circuit, it is achieved signal
Shunting, and then realize the effective control to amplifier gain.
But, owing to, under different gains state, the common bank tube quantity accessed at the output node A of this amplifier is to differ
Sample so that the output capacitance at the output node A of this amplifier can change along with the change of this amplifier gain, thus leads
Cause the output phase place of this amplifier to be continually changing as well as the gain of this amplifier, i.e. can exist and cannot realize under different gains
The problem of output phase-constant.
The second, bias voltage control type variable gain amplifier.As in figure 2 it is shown, wherein, R represents biasing resistor, Q1, Q2 table
Show transistor (such as audion or metal-oxide-semiconductor etc.), Vb1Represent bias voltage.The operation principle of this amplifier can be: by changing
The bias voltage V of Q1b1, the output electric current of this amplifier is controlled, to control the input stage mutual conductance of this amplifier, Jin Ershi
The now effective control to this amplifier gain.
But, owing to junction capacity and the parasitic capacitance of transistor self possess different electric capacity under different bias currents
Value, so that the output phase place of this amplifier circuit can change along with the change of bias current, thus causes still existing
The problem that cannot realize exporting phase-constant under different gains.
Summary of the invention
Embodiments provide a kind of variable gain amplifier, deposited in order to solve existing variable gain amplifier
The problem exporting phase-constant under cannot realizing different gains.
On the one hand, a kind of variable gain amplifier is embodiments provided, including gain control unit and phase place
Compensating unit, wherein, described gain control unit includes one group or two group transistors:
Described gain control unit, for the biased electrical by changing each transistor in described a group or two group transistors
The size of pressure, the size that each transistor exports electric current is controlled, to change the gain of described variable gain amplifier；
Described phase compensation unit, for the phase of the output electric current to each transistor in described a group or two group transistors
Position compensates, so that the phase place of the output signal of described variable gain amplifier keeps constant.
It is to say, in scheme described in the embodiment of the present invention, phase can be increased by the input stage at variable gain amplifier
Position compensates network so that variable gain amplifier, under different gain-state, all can guarantee that the constant of output phase place, thus solves
Cannot realize existing for existing variable gain amplifier of having determined exports the problem of phase-constant under different gains, improve can
The performance of variable-gain amplifier.
In a kind of possible implementation, if described gain control unit includes two group transistors, the most described two groups of crystalline substances
The first group transistor in body pipe includes the first transistor and transistor seconds, and the signal input part of the first transistor and
One voltage input signal and the first bias voltage are connected, the signal input part of transistor seconds and the second voltage input signal with
And second bias voltage be connected；The second group transistor in described two group transistors includes third transistor and the 4th crystal
Manage, and the signal input part of third transistor is connected with described first voltage input signal and described second bias voltage, the
The signal input part of four transistors is connected with described second voltage input signal and described first bias voltage；And, described
One voltage input signal and described second voltage input signal are a pair differential signal:
Described gain control unit, specifically for by changing described first bias voltage and described second bias voltage
Size, to each transistor in described two group transistors output electric current size be controlled, to change described variable increasing
The gain of benefit amplifier.
It is to say, can realize by realizing the conjunction road of positive and negative input signal in the input stage of variable gain amplifier
Gain control function.
In alternatively possible implementation, described phase compensation unit includes that first phase compensates subelement and the
Two phase compensation subelement:
Described first phase compensate subelement two ends respectively with the first transistor, third transistor not as described can
The signal output part of the signal output part of variable-gain amplifier is connected, for the first transistor, the output electricity of third transistor
The phase place of stream compensates；
Described second phase compensate subelement two ends respectively with transistor seconds, the 4th transistor not as described can
The signal output part of the signal output part of variable-gain amplifier is connected, for transistor seconds, the output electricity of the 4th transistor
The phase place of stream compensates.
It is to say, each phase compensation subelement can be connected to the in-phase input end of variable gain amplifier, with
The phase place of variable gain amplifier output signal is compensated.
Wherein, each phase compensation subelement includes an electric capacity, or, it is in series including an electric capacity and with this electric capacity
One resistance.
It is to say, the impedance of described phase compensation unit can be an imaginary part, or imaginary part and the combination of real part, make
The structure obtaining phase compensation unit is the most flexible.
It addition, the capacitance of the electric capacity in each phase compensation subelement is not less than setting threshold value.
That is, in the embodiment of the present invention, the working frequency range internal impedance at variable gain amplifier can be introduced less, generally can be in
Reveal the electric capacity of ac short circuit characteristic as phase compensation unit so that the introducing of phase compensation unit do not interfere with whole can
The amplitude of variable-gain amplifier output signal.
In a kind of possible implementation, described variable gain amplifier also includes:
Degeneration, linear for the output electric current by changing each transistor in described a group or two group transistors
Degree, changes the linearity of the output signal of described variable gain amplifier.
It is to say, in embodiments of the present invention, the linearity of output electric current for improving each transistor can be introduced
Degeneration, and then improve the linearity of the output signal of whole variable gain amplifier so that variable gain amplifier across
Lead gain can change linearly along with the change of bias voltage as much as possible.
Wherein, described degeneration includes resistance and/or inductance.
I.e., in embodiments of the present invention, described degeneration can be single resistance, single inductance or resistance and electricity
The combination in any of sense.
In a kind of possible implementation, described first bias voltage and described second bias voltage enable to
One transistor, size sum and the transistor seconds of output electric current of third transistor, the 4th transistor export the big of electric current
Little sum is equal, and is the fixed value of a setting.
It is to say, in embodiments of the present invention, described first bias voltage and the size of described second bias voltage
It is required that the size sum of the output electric current of the first transistor, third transistor, and, transistor seconds, the 4th transistor
The size sum perseverance of output electric current be a fixed value, thus ensure that the constant of the input impedance of variable gain amplifier, make
The input impedance obtaining variable gain amplifier will not change along with the change of gain-state, further increases variable gain and puts
The performance of big device.
In alternatively possible implementation, described gain control unit, specifically for controlling by simulation and/or number
The mode that word controls changes the size of the bias voltage of each transistor in described a group or two group transistors.
It is to say, in embodiments of the present invention, gain can be realized by simulation control and/or numerically controlled mode
Switching so that the stepping of gain accuracy is less, and the performance of system is higher.
In alternatively possible implementation, each transistor in described gain control unit is audion or field
Effect pipe.
That is, in the embodiment of the present invention, transistor can be audion, it is possible to for field effect transistor, thus improves variable gain
The motility of amplifier.
The embodiment of the present invention proposes a kind of variable gain amplifier, can be increased by the input stage at variable gain amplifier
Add phase compensating network so that variable gain amplifier, under different gain-state, all can guarantee that the constant of output phase place, from
And solve cannot realize existing for existing variable gain amplifier and under different gains, export the problem of phase-constant, improve
The performance of variable gain amplifier.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, in embodiment being described below required for make
Accompanying drawing briefly introduce, it should be apparent that, below describe in accompanying drawing be only some embodiments of the present invention, for this
From the point of view of the those of ordinary skill in field, on the premise of not paying creative work, it is also possible to obtain other according to these accompanying drawings
Accompanying drawing.
Fig. 1 show the structural representation of current steer type variable gain amplifier of the prior art；
Fig. 2 show the structural representation of bias voltage control type variable gain amplifier of the prior art；
The first the possible structural representation of the variable gain amplifier that Fig. 3 show in the embodiment of the present invention；
The structural representation that the second of the variable gain amplifier that Fig. 4 show in the embodiment of the present invention is possible；
The third the possible structural representation of the variable gain amplifier that Fig. 5 show in the embodiment of the present invention；
The structural representation of the difference channel that the first group transistor that Fig. 6 show in the embodiment of the present invention is formed；
What Fig. 7 showed in the embodiment of the present invention is not introduced into phase compensation unit and the variable increasing comprising two group transistors
A kind of possible structural representation of benefit amplifier；
What Fig. 8 showed in the embodiment of the present invention is not introduced into phase compensation unit and the variable increasing comprising two group transistors
The alternatively possible structural representation of benefit amplifier；
Arbitrary transistor that Fig. 9 show in the half of equivalent circuit of variable gain amplifier output electric current phase place with
And the relation schematic diagram between amplitude and the bias current of transistor；
Figure 10 (a) show the half of the variable gain amplifier being not introduced into phase compensation unit and comprise two group transistors
The amplitude of the output electric current of two transistors in the amplitude of the output electric current of limit equivalent circuit and half of equivalent circuit is with brilliant
Relation schematic diagram between the bias current of body pipe；
Figure 10 (b) show the half of the variable gain amplifier being not introduced into phase compensation unit and comprise two group transistors
The phase place of the output electric current of two transistors in the phase place of the output electric current of limit equivalent circuit and half of equivalent circuit is with brilliant
Relation schematic diagram between the bias current of body pipe；
Figure 11 show before and after introducing phase compensation unit, comprises one side of something of the variable gain amplifier of two group transistors
Relation schematic diagram between phase place and the bias current of transistor of the output electric current of equivalent circuit；
Figure 12 show the one side of something etc. of the variable gain amplifier introducing phase compensation unit and comprise two group transistors
The relation schematic diagram of the output amplitude of electric current of effect circuit and phase place and capacitor's capacity；
Figure 13 (a) show the half of equivalent circuit of variable gain amplifier before introducing phase compensation unit and exports electric current
Phase place schematic diagram；
Figure 13 (b) show the half of equivalent circuit of variable gain amplifier after introducing phase compensation unit and exports electric current
Phase place schematic diagram.
Detailed description of the invention
In order to make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing the present invention made into
One step ground describes in detail, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole enforcement
Example.Based on the embodiment in the present invention, those of ordinary skill in the art are obtained under not making creative work premise
All other embodiments, broadly fall into the scope of protection of the invention.
In order to solve cannot to realize exporting under different gains phase-constant existing for existing variable gain amplifier
Problem, the embodiment of the present invention proposes a kind of variable gain amplifier, as it is shown on figure 3, it is variable described in the present embodiment
The structural representation of gain amplifier.Specifically, from the figure 3, it may be seen that described variable gain amplifier can include gain control unit
31 and phase compensation unit 32, wherein, described gain control unit 31 can include one group or two group transistors:
Described gain control unit 31, can be used for by changing the inclined of each transistor in described one group or two group transistors
Putting the size of voltage, the size that each transistor exports electric current is controlled, to change the increasing of described variable gain amplifier
Benefit；
Described phase compensation unit 32, can be used for the output electric current to each transistor in described a group or two group transistors
Phase place compensate so that the output signal of described variable gain amplifier phase place keep constant.
It is to say, in embodiments of the present invention, phase compensation can be increased by the input stage at variable gain amplifier
Unit (i.e. phase compensating network) so that variable gain amplifier, under different gain-state, all can guarantee that output phase place
Constant, thus solve and cannot realize exporting under different gains the asking of phase-constant existing for existing variable gain amplifier
Topic, improves the performance of variable gain amplifier.
Wherein, the group number of the transistor included by described gain control unit 31 can be by the letter of described variable gain amplifier
The number of number input or signal output part determines, such as, when signal input part or the signal of described variable gain amplifier are defeated
Going out end when being one, the group number of the transistor included by described gain control unit 31 can be 1 group；When described variable gain is amplified
When the signal input part of device or signal output part are two, the group number of the transistor included by described gain control unit 31 can be
2 groups, this is not repeated.
Alternatively, as shown in Figure 4, in order to improve the linearity of variable gain amplifier, described variable gain is amplified
Device may also include that
Degeneration 33, can be used for output electric current by changing each transistor in described a group or two group transistors
The linearity, changes the linearity of the output signal of described variable gain amplifier.
Below, as a example by described gain control unit 31 includes two group transistors, to the variable increasing described in the present embodiment
Benefit amplifier is described in detail:
Specifically, as shown in Figure 4, described gain control unit includes in two group transistors, and described two group transistors
First group transistor includes the first transistor (Qp2 as shown in Figure 4) and transistor seconds (Qn1 as shown in Figure 4),
And the signal input part (i.e. the base stage of Qp2 or grid) of the first transistor is with the first voltage input signal (as shown in Figure 4
Vrf+) and the connected (V as shown in Figure 4 of the first bias voltageb2), signal input part (the i.e. base stage of Qn1 of transistor seconds
Or grid) and the second voltage input signal (V as shown in Figure 4rf-) and the second bias voltage be connected (as shown in Figure 4
Vb1)；The second group transistor in described two group transistors includes third transistor (Qp1 as shown in Figure 4) and the 4th crystalline substance
Body pipe (Qn2 as shown in Figure 4), and the signal input part (i.e. the base stage of Qp1 or grid) and described first of third transistor
Voltage input signal (V as shown in Figure 4rf+) and the connected (V as shown in Figure 4 of described second bias voltageb1), the 4th
The signal input part (i.e. the base stage of Qn2 or grid) of transistor and described second voltage input signal (V as shown in Figure 4rf-)
And described first bias voltage (V as shown in Figure 4b2) be connected；And, described first voltage input signal is (as shown in Figure 4
Vrf+) and described second voltage input signal (V as shown in Figure 4rf-) be a pair differential signal (i.e. a pair equal in magnitude and
Opposite polarity symmetric signal)；
Described gain control unit 31, is particularly used in by changing described first bias voltage (as shown in Figure 4
Vb2) and described second bias voltage (V as shown in Figure 4b1) size, to each transistor in described two group transistors
Output electric current size be controlled, to change the gain of described variable gain amplifier.
It is to say, in the present embodiment, can be by realizing positive and negative input signal in the input stage of variable gain amplifier
Conjunction road, realize gain control function.
Alternatively, each transistor in described gain control unit 31 can be audion (such as NPN type triode etc.) or
Field effect transistor (such as N-MOS pipe etc.), is not limited in any way this.In addition, it is necessary to explanation, as a rule, the present invention implements
The parameters of each transistor described in example is the most identical, and certainly, the parameters of each transistor also can be different, do not appoint this
What limits.
It addition, as shown in Figure 4, the first signal output part (colelctor electrode of Qp2 and Qn1 in described first group transistor
Or drain electrode) be connected, and can be as a signal output part (i as shown in Figure 4 of described variable gain amplifierout-), described
First signal output part (i.e. colelctor electrode or drain electrode) of Qp1 and Qn2 in the second group transistor is connected, and as described variable
Another signal output part (i as shown in Figure 3 of gain amplifierout+)。
It addition, as shown in Figure 4, the gain control unit 31 including the described variable gain amplifier of two group transistors also may be used
Including the biasing resistor being connected between the signal input part of each transistor and corresponding bias voltage, R1 as shown in Figure 4,
R2, R3 and R4 etc., and be connected between the signal input part of each transistor and corresponding input voltage signal every straight electricity
Holding, C1, C2, C3 and C4 as shown in Figure 4 etc., this is not repeated by the present embodiment.
Specifically, described gain control unit 31, it is particularly used in and is changed by simulation control and/or numerically controlled mode
Become described first bias voltage and the size of described second bias voltage.
Due in prior art one, the gain control of variable gain amplifier need the quantity by controlling bank tube altogether and
Ratio realizes, and this is it is possible to can cause the stepping of gain control bigger, it is impossible to realize high-precision control, and at the present embodiment
In, can be according to practical situation, the mode using numeral, simulation or digital simulation to combine selects the stepping of gain control flexibly,
It is thus able to effectively refine the stepping of gain control, improves phase shifting accuracy and systematic function.
Further, described first bias voltage and described second bias voltage enable to the first transistor, the 3rd
The size sum of the output electric current of transistor is equal with the size sum of transistor seconds, the output electric current of the 4th transistor, and
It it is the fixed value of a setting.
It is to say, in embodiments of the present invention, described first bias voltage and the size of described second bias voltage
It is required that the size sum of the output electric current of the first transistor, third transistor, and, transistor seconds, the 4th transistor
The size sum perseverance of output electric current be a fixed value, thus ensure that the constant of the input impedance of variable gain amplifier, make
The input impedance obtaining variable gain amplifier will not change along with the change of gain-state, further increases variable gain and puts
The performance of big device.
Such as, as a example by the variable gain amplifier including two group transistors shown in Fig. 4, it is assumed that the current collection of described Qp2
The output electric current of pole (or drain electrode) is ip2, the output electric current of colelctor electrode (or drain electrode) of described Qn1 be in1, the current collection of described Qp1
The output electric current of pole (or drain electrode) is ip1And the output electric current of the colelctor electrode (or drain electrode) of described Qn2 is in2, the most described Vb2With
And described Vb1The output electric current that can make the colelctor electrode (or drain electrode) of each transistor meets the bias relation shown in equation below 1:
ip2+ip1=in1+in2=C；Formula 1
Wherein, C is a fixing constant value, and its value can set flexibly according to practical situation, not repeat this.
It is assumed that still as a example by the variable gain amplifier including two group transistors shown in Fig. 4, then can be true by foregoing
The gain that fixed described variable gain amplifier is final, its computing formula can be as shown in Equation 2:
Wherein, Gain represents the gain of described variable gain amplifier, iout-Represent the of described variable gain amplifier
The output electric current of one group transistor, iout+Represent the output electric current of the second group transistor of described variable gain amplifier, Vrf+Table
Show described first voltage input signal, Vrf-Represent described second voltage input signal.
Further, described iout-And iout+Can be calculated by formula 3:
Wherein, ip2Represent the output electric current of described Qp2 colelctor electrode (or drain electrode), in1Represent described Qn1 colelctor electrode (or leakage
Pole) output electric current, ip1Represent the output electric current of described Qp1 colelctor electrode (or drain electrode), in2Represent described Qn2 colelctor electrode (or leakage
Pole) electric current.
From formula 2～formula 3, in the embodiment of the present invention, gain control unit 31 can be by two group transistors
Output signal carry out close road mode to realize the gain control function of variable gain amplifier, can be by Vrf+And Vrf-The two
The difference of input signal, can be by i as the input signal of whole variable gain amplifierout+And iout-The two output signal
Difference is as the output signal of whole variable gain amplifier, by changing Vb2And Vb1Difference, it is achieved to iout+And iout-'s
The amplification of difference, to change the transadmittance gain of variable gain amplifier, wherein, the transadmittance gain tool of described variable gain amplifier
Body can be output signal (i.e. iout+And iout-Difference) with input (Vrf+And Vrf-Difference) ratio of signal.
In addition, it is necessary to explanation, if desired calculate the voltage gain of described variable gain amplifier, also mutual conductance can be increased
Benefit and load impedance ZLProduct as the voltage gain of described variable gain amplifier, this is not limited in any way.
Further, still as a example by the variable gain amplifier including two group transistors shown in Fig. 4, described phase compensation
Unit 32 can include that first phase compensates subelement 321 and second phase and compensates subelement 322:
Described first phase compensate subelement 321 two ends can respectively with the first transistor (i.e. Qp2), third transistor
The secondary signal outfan of (i.e. Qp1) (i.e. Qp2, Qp1 not as the signal of signal output part of described variable gain amplifier
Outfan, the concretely emitter stage of Qp2, Qp1 or source electrode) it is connected, can be used for the first transistor, the output of third transistor
The phase place of electric current compensates；
Described second phase compensate subelement 322 two ends can respectively with transistor seconds (i.e. Qn1), the 4th transistor
The secondary signal outfan of (i.e. Qn2) (i.e. Qn1, Qn2 not as the signal of signal output part of described variable gain amplifier
Outfan, the concretely emitter stage of Qn1, Qn2 or source electrode) it is connected, can be used for transistor seconds, the output of the 4th transistor
The phase place of electric current compensates.
Such as, as shown in Figure 4, first phase can be compensated subelement 321 and be connected to the emitter stage of the first transistor Qp2
Between the emitter stage (or source electrode) of (or source electrode) and third transistor Qp1, second phase can be compensated subelement 322 and be connected to
Between emitter stage (or source electrode) and the emitter stage (or source electrode) of the 4th transistor Qn2 of two-transistor Qn1, thus realize crystal
The phase compensation of the output electric current of pipe Qp2, Qp1, Qn1 and Qn2, does not repeats this.
It is to say, each phase compensation subelement can be connected to the in-phase input end of variable gain amplifier, with
The phase place of variable gain amplifier output signal is compensated.
Specifically, each phase compensation subelement can include an electric capacity (C5, C6 as shown in Figure 4), or, including one
Electric capacity and the resistance (C5, R5 and C6 as shown in Figure 5, R6) being in series with this electric capacity.
It is to say, the impedance of described phase compensation unit 32 can be an imaginary part, it is also possible to be imaginary part and real part
Combination, thus the structure of described phase compensation unit 32 can be made the most flexible, improve gain-changeable amplifier circuit further
Motility.
In addition, it is necessary to explanation, electric capacity and the number of resistance that each phase compensation subelement includes are alternatively
Multiple, as long as the electric current of respective transistor output can be carried out the compensation (or counteracting) of phase place, this is not repeated.
Further, so that phase compensation unit 32 does not affect the width of the output electric current of described variable gain amplifier
Degree, also reasonably can set the capacitance of each electric capacity in described phase compensation unit 32.As, it is generally the case that can be by
The capacitance of the electric capacity in each phase compensation subelement is set to not less than the numerical value setting threshold value, so that phase compensation is sub
Electric capacity in unit presents short circuit curve in the operating frequency of variable gain amplifier, only affects the defeated of variable gain amplifier
Go out the phase place of electric current.
Wherein, described setting threshold value can be arranged flexibly according to practical situation, as can be according to the work of variable gain amplifier
Frequency sets, and this is not limited in any way by the embodiment of the present invention.
Alternatively, still as a example by the variable gain amplifier including two group transistors shown in Fig. 4, it is assumed that described phase place is mended
Repay unit 32 and still can include that first phase compensates subelement 321 and second phase compensates subelement 322, the most described first phase
Position compensate subelement 321 two ends also can respectively with the first transistor (i.e. Qp2), the secondary signal of transistor seconds (i.e. Qn1)
Outfan (i.e. Qp2, Qn1 not as the signal output part of signal output part of described variable gain amplifier, concretely
The emitter stage of Qp2, Qn1 or source electrode) it is connected, carry out for the phase place that the first transistor, transistor seconds are exported electric current
Compensate；
Described second phase compensate subelement 322 two ends also can respectively with third transistor (i.e. Qp1), the 4th transistor
The secondary signal outfan of (i.e. Qn2) (i.e. Qp1, Qn2 not as the signal of signal output part of described variable gain amplifier
Outfan, the concretely emitter stage of Qp1, Qn2 or source electrode) it is connected, for third transistor, the output of the 4th transistor
The phase place of electric current compensates.
It is to say, each phase compensation subelement in phase compensation unit 32 is except being attached to variable gain amplifier
In-phase input end outside, be also attached to the out-phase input of variable gain amplifier.Preferably due to each phase compensation is sub
When unit is connected to the out-phase input of variable gain amplifier, the degeneration quoted in circuit cannot play good linear
Compensating action, thus, in the present embodiment, generally can each phase compensation subelement in phase compensation unit 32 be connected to variable
The in-phase input end of gain amplifier, this is not repeated by the present embodiment.
Alternatively, as a example by the variable gain amplifier including two group transistors shown in Fig. 4, introduced degeneration
33 can include that first degenerate element the 331, second degenerate element the 332, the 3rd degenerate element 333 and the 4th degeneration are single
Unit 334；And, above-mentioned degenerate element with the annexation of each transistor can be: the secondary signal output of described the first transistor
End (i.e. Qp2 not as the signal output part of signal output part of described variable gain amplifier, the concretely transmitting of Qp2
Pole or source electrode) by described first degenerate element 331 ground connection, the secondary signal outfan of described transistor seconds be (i.e. Qn1's
Not as the signal output part of signal output part of described variable gain amplifier, the concretely emitter stage of Qn1 or source electrode) logical
Cross described second degenerate element 332 ground connection, the secondary signal outfan of described third transistor (i.e. Qp1 not as described
The signal output part of the signal output part of variable gain amplifier, the concretely emitter stage of Qp1 or source electrode) by the described 3rd
Degenerate element 333 ground connection, (i.e. Qn2's does not puts the secondary signal outfan of described 4th transistor as described variable gain
The signal output part of the signal output part of big device, the concretely emitter stage of Qn2 or source electrode) by described 4th degenerate element
334 ground connection.
That is, described first phase compensates the two ends of subelement 321 and can move back with the first degenerate element 331 and second respectively
The ungrounded end of beggar's unit 332 is connected, and described second phase compensates the two ends of subelement 322 and can degenerate with the 3rd sub single respectively
The ungrounded end of unit 333 and the 4th degenerate element 334 is connected, and does not repeats this.
It is to say, in the embodiment of the present invention, corresponding degeneration can be connected at the emitter stage (or source electrode) of each transistor
Subelement, reasonably improves so that each transistor to export the linearity of electric current, thus improves whole variable gain and amplify
The linearity of the output signal of device, i.e. improves the linearity of transadmittance gain so that transadmittance gain changes as far as possible with bias voltage
Change linearly.Such as, as a example by the variable gain amplifier shown in Fig. 4, introduced degeneration can be with phase compensation
Each electric capacity (such as C5, C6) in unit forms the three rank degenerate networks of L-C-L, with in the output signal to variable gain amplifier
While carrying out phase compensation, improve the linearity of variable gain amplifier institute output signal.
Further, each degenerate element can include a resistance and/or an inductance.
In addition, it is necessary to explanation, the resistance included by each degenerate element is the most multiple with the number of inductance, only
Want to improve the linearity of the electric current of respective transistor output；It addition, resistance included by each degenerate element and/
Or depending on the big I of inductance is according to practical situation, this is not repeated.
Below, the phase compensation principle of the variable gain amplifier described in the present embodiment will be described in detail:
First, can be in conjunction with Fig. 6～Fig. 8, to being not introduced into phase compensation unit 32 and comprising the variable gain of two group transistors
The gain control principle of amplifier is briefly described:
Specifically, this is not introduced into the first of phase compensation unit 32 and the variable gain amplifier that comprises two group transistors
The difference channel that group transistor (including the first transistor and transistor seconds) is formed can be as shown in Figure 6, i.e. can be by a pair
Differential signal is (such as Vrf+And Vrf-) be respectively connected to described the first transistor (such as Qp2) and as described in transistor seconds (as
Qn1) base stage (or grid), and by colelctor electrode (or drain electrode) short circuit of described the first transistor and described transistor seconds,
So, described first can be controlled brilliant by changing the size of the bias voltage of described the first transistor and transistor seconds
The bias current of body pipe and described transistor seconds is (such as IC2And IC1, wherein, IC2Represent QP2Bias current, IC1Represent
Qn1Bias current) size, to realize the effective control to the transadmittance gain of the difference channel that this first group transistor is formed
System.
Specifically, the output electric current of the difference channel shown in Fig. 6 can be as shown in Equation 4:
iout-=(gm2-gm1)·Vrf；Formula 4
Wherein, gm2Represent the mutual conductance of described the first transistor, gm1Represent the mutual conductance of described transistor seconds, VrfRepresent institute
State the voltage input signal of difference channel.In addition, it is necessary to explanation, gm2-gm1And VrfCan be counted by formula 5 and formula 6
Obtain:
Vrf=Vrf+-Vrf-；Formula 6
Wherein, ip2And in1Represent the first transistor and the output electric current of transistor seconds colelctor electrode (or drain electrode) respectively,
Vrf+And Vrf-Represent the first voltage input signal and second voltage input signal of described difference channel, and described respectively
One voltage input signal and described second voltage input signal are a pair differential signal.
Further, it should be noted that V in formula 6TRepresent thermal voltage, specifically can be calculated by formula 7:
Wherein, k represents Boltzmann constant (i.e. k=1.3806488 × 10-23J/K), T represents that Fahrenheit temperature, q represent unit
The quantity of electric charge (the i.e. q=1.602 176 565 × 10 of electric charge-19C)。
Further, it is contemplated that the situation of differential-input differential output, the difference channel shown in Fig. 6 can be opened up accordingly
Exhibition, (Fig. 7 is to be not introduced into phase compensation unit 32 and comprise the variable gain of two group transistors to obtain the circuit structure shown in Fig. 7
A kind of possible structural representation of amplifier).As shown in Figure 7, signal Vrf+And Vrf-Also can be respectively connected to variable gain
Third transistor (such as Qp1) in second group transistor of amplifier and the base stage (or grid) of the 4th transistor (such as Qn2),
Further, the colelctor electrode of third transistor and the 4th transistor (or drain electrode) can mutual short circuit, this is not repeated.
Further, it is contemplated that the bias voltage that the base stage (or grid) of each transistor is accessed, also can be by shown in Fig. 6
Difference channel is expanded accordingly, and (Fig. 8 is for being not introduced into phase compensation unit 32 and comprising two to obtain the circuit structure shown in Fig. 8
The alternatively possible structural representation of the variable gain amplifier of group transistor).Wherein, as shown in Figure 8, the first bias voltage
(i.e. Vb2) base stage (or grid) of the first transistor (i.e. Qp2) can be accessed by biasing resistor R1, accessed by biasing resistor R4
The base stage (or grid) of the 4th transistor (i.e. Qn2), the second bias voltage (i.e. Vb1) the second crystalline substance can be accessed by biasing resistor R2
The base stage (or grid) of body pipe (i.e. Qn1), accessed the base stage (or grid) of third transistor (i.e. Qp1) by biasing resistor R3.
In addition, it is necessary to explanation, so that the input impedance of variable gain amplifier keeps constant, shown in Fig. 8
The bias voltage of variable gain amplifier generally can make the electric current on the colelctor electrode (or drain electrode) of each transistor meet biasing pass
It is ip2+ip1=in1+in2=C (C is a constant), does not repeats this.
Amplify it is to say, variable gain can be realized by the way of carrying out the output signal of two group transistors closing road
The gain control function of device, can be by Vrf+And Vrf-The difference of the two input signal is defeated as whole variable gain amplifier
Enter signal, can be by iout+And iout-The difference of the two output signal, as the output signal of whole variable gain amplifier, is passed through
Change Vb2And Vb1Difference, it is achieved to iout+And iout-The amplification of difference, to change the transadmittance gain of variable gain amplifier.
Further, below with reference to Fig. 9～10 (b), the one side of something etc. to the variable gain amplifier shown in Fig. 7 or Fig. 8
Effect circuit (such as including the half of equivalent circuit of the first transistor Qp2 and transistor seconds Qn1) output electric current amplitude with
And the relation of phase place and the bias current of transistor is specifically introduced:
First, (Fig. 9 is the arbitrary transistor (such as Qp2) in the half of equivalent circuit of variable gain amplifier as shown in Figure 9
The output amplitude of electric current and the relation schematic diagram of phase place and the bias current of transistor, wherein, transistor described herein
Bias current specifically may refer to the difference of bias current of two transistors in half of equivalent circuit, such as IC2-IC1, IC2Table
Show QP2Bias current, IC1Represent Qn1Bias current), the arbitrary crystal in the half of equivalent circuit of variable gain amplifier
Output electric current (the i.e. i of pipe (such as Qp2)p2) amplitude can be linearly increasing along with the increase of the bias current of transistor, output electricity
Stream (i.e. ip2) phase place can first increase reduce afterwards along with the increase of the bias current of transistor, this is because transistor self
Junction capacity and parasitic capacitance can present different capacitances in different electric current densities, are i.e. by the physical characteristic institute of transistor self
Determine.
Output electric current accordingly, due to the half of equivalent circuit of the variable gain amplifier shown in Fig. 7 or Fig. 8 is actual
On can be that the vector of output electric current of two transistors in described equivalent circuit closes road, thus, can be according to appointing described in Fig. 9
Relation between output electric current and the bias current of transistor of one transistor, determines that the variable gain shown in Fig. 7 or Fig. 8 is put
The amplitude of the output electric current of the half of equivalent circuit of big device and the relation of the bias current of phase place and transistor.
Specifically, by the output electric current of the half of equivalent circuit of the variable gain amplifier shown in Fig. 7 or Fig. 8 is entered
Row analogue simulation, available relation schematic diagram as shown in Figure 10 (a) and Figure 10 (b), wherein, Figure 10 (a) is Fig. 7 or figure
In the amplitude of the output electric current of the half of equivalent circuit of the variable gain amplifier shown in 8 and half of equivalent circuit two
The bias current of amplitude and the transistor of the output electric current of transistor (concretely two transistors in half of equivalent circuit
The difference of bias current, such as IC2-IC1) relation schematic diagram, Figure 10 (b) is the variable gain amplifier shown in Fig. 7 or Fig. 8
The phase place of the output electric current of two transistors in the phase place of the output electric current of half of equivalent circuit and half of equivalent circuit with
(the concretely difference of the bias current of two transistors in half of equivalent circuit, such as I for the bias current of transistorC2-IC1)
Relation schematic diagram.(phase compensation unit i.e. it is not introduced into from the variable gain amplifier shown in Figure 10 (a), Fig. 7 or Fig. 8
32 and comprise the variable gain amplifier of two group transistors) half of equivalent circuit in the width of output electric current of each transistor
Degree all linear change along with the change of bias current of transistor, such as the Mag i in Figure 10 (a)p2And Mag in1；Described
The amplitude of the output electric current (the output electric current after i.e. vector closes road) of half of equivalent circuit is also with the bias current of transistor
Change and linear change, such as the Mag i in Figure 10 (a)out-；The output electric current of each transistor in described half of equivalent circuit
Phase place changes, e.g., such as the Phase i in Figure 10 (b) along with the change of the bias current of transistorp2And Phase in1；Institute
The phase place of the output electric current stating half of equivalent circuit changes, in Figure 10 (b) also with the change of the bias current of transistor
Phase iout-。
It addition, from Figure 10 (b), when bias current is changed to 2.5mA from 1.5mA, described half of equivalent circuit
The phase contrast of output electric current is 8 ° (i.e. having changed to 170 ° from 162 °).This just illustrates, the variable gain shown in Fig. 7 or Fig. 8
The phase place of the output signal of amplifier can change along with different change in gain, and the phase place that i.e. can there is output signal is non-constant
Problem.
It is to say, to shown in Fig. 7 or Fig. 8 be not introduced into phase compensation unit 32 and comprise two group transistors can
For variable-gain amplifier, the phase place of the output signal of whole variable gain amplifier can be along with the change of different gains state
Change, i.e. do not include that the variable gain amplifier of phase compensation unit 32 can exist and cannot realize exporting under different gains phase place
Constant problem, the poor-performing of system.
Therefore, in order to the phase place of the output signal of the variable gain amplifier shown in Fig. 7 or Fig. 8 is compensated, can
Corresponding phase compensation unit 32, wherein, described phase is introduced to the input stage of the variable gain amplifier shown in Fig. 7 or Fig. 8
The position compensating unit 32 concretely phase compensation unit 32 including two phase compensation subelements shown in Fig. 4.
Specifically, it is assumed that being not introduced into phase compensation unit 32 and comprising two group transistors shown in Fig. 7 or Fig. 8
Variable gain amplifier after introducing phase compensation unit 32 in variable gain amplifier, and introducing phase compensation unit 32
Structure as shown in Figure 4, then inclined to the output electric current of the half of equivalent circuit of the variable gain amplifier shown in Fig. 4 and transistor
(the concretely difference of the bias current of two transistors in half of equivalent circuit, such as I to put electric currentC2-IC1) relation imitate
True simulation, available relation schematic diagram as shown in figure 11, wherein, dotted line represents the change introduced before phase compensation unit 32
Curve, solid line represents the change curve introduced after phase compensation unit 32, Phase ip2Represent in described half of equivalent circuit
The first transistor (i.e. Qp2) output electric current phase place, Phase in1Represent the second crystal in described half of equivalent circuit
The phase place of pipe (i.e. Qn1) output electric current, Phase iout-Represent the phase place (i.e. first of the output electric current of described half of equivalent circuit
The phase place of the vector of the output electric current of transistor and transistor seconds).
Further, as shown in Figure 11, after introducing phase compensation unit 32, the output of described half of equivalent circuit
The phase place of electric current there occurs bigger change, and when bias current is changed to 2.5mA from 1.5mA, vector closes the output electricity behind road
The phase contrast of stream (the output electric current of i.e. half of equivalent circuit) is less than 1 ° (being i.e. maintained at about 169 °), compared to not introducing phase
Phase contrast (8 °) during the compensating unit 32 of position, it is achieved that well compensate.This just illustrates, the introducing energy of phase compensation unit 32
Enough phase places to variable gain amplifier output signal play good compensating action, i.e. variable gain shown in Fig. 4 and amplify
The phase place of the output signal of device will not change along with different change in gain, solves and cannot realize exporting under different gains phase
The problem that position is constant, improves the performance of variable gain amplifier.
In addition, it is necessary to explanation, so that the phase compensation unit 32 introduced is not to described variable gain amplifier
Output signal amplitude produce impact, the capacitance of the electric capacity in the phase compensation unit 32 of introducing generally can be bigger.
Further, possess the electric capacity of different capacitance according to three kinds as shown in figure 12, the variable gain shown in Fig. 4 is put
The output electric current of the half of equivalent circuit of big device and Transistor bias currents (concretely two crystal in half of equivalent circuit
The difference of the bias current of pipe, such as IC2-IC1) relation carry out analogue simulation, to determine the appearance of the electric capacity in phase compensation unit 32
The impact on the phase place of the output electric current of the half of equivalent circuit of described variable gain amplifier of the value size.
Specifically, it is respectively bulky capacitor (as infinitely great), middle electric capacity when the capacitance of the electric capacity in phase compensation unit 32
During (as 10pF) and small capacitances (as 4pF), the amplitude of the output electric current of described half of equivalent circuit and phase place are with crystalline substance
(the concretely difference of the bias current of two transistors in half of equivalent circuit, such as I for body pipe bias currentC2-IC1) change
As shown in figure 12, as shown in Figure 12, the capacitance size of the electric capacity in phase compensation unit 32 is substantially without impact one side of something etc. for curve
The amplitude (Mag as shown in Figure 12) of the output electric current of effect circuit, but the size of electric capacity can affect half of equivalent circuit
The phase place of output electric current.
Further, as shown in Figure 12, when the capacitance of described electric capacity relatively big (as middle electric capacity 10pF), described phase place is mended
The phase compensation ability repaying unit 32 is optimal.Certainly, it should be noted that the capacitance of described electric capacity is not to be the bigger the better yet
(as time infinitely great, phase compensation ability is poor), specifically can arrange flexibly by root practical situation, repeats no more this.
Finally, as a example by Figure 13 (a) and Figure 13 (b), the effect before and after introducing phase compensation unit 32 is entered one
The explanation of step ground, from Figure 13 (a), under low gain and high-gain two states, if the input stage of variable gain amplifier does not has
There is introducing phase compensation unit 32 (i.e. electric capacity), there is phase error between two output signals after Ze He road, i.e. export
The phase place of signal is non-constant；From Figure 13 (b), if the input stage of variable gain amplifier introduces phase compensation unit 32,
The phase place of two output signals after Ze He road keeps consistent.
Embodiments provide a kind of variable gain amplifier, can be increased by the input stage at variable gain amplifier
Add phase compensating network so that variable gain amplifier, under different gain-state, all can guarantee that the constant of output phase place, from
And solve cannot realize existing for existing variable gain amplifier and under different gains, export the problem of phase-constant, improve
The performance of variable gain amplifier.
Further, since realize the control of gain without the quantity by controlling bank tube altogether, thus can also simplifying transistor
Laying out pattern, reduce variable gain amplifier cost.
Although preferred embodiments of the present invention have been described, but those skilled in the art once know basic creation
Property concept, then can make other change and amendment to these embodiments.So, claims are intended to be construed to include excellent
Select embodiment and fall into all changes and the amendment of the scope of the invention.
Obviously, those skilled in the art can carry out various change and the modification essence without deviating from the present invention to the present invention
God and scope.So, if these amendments of the present invention and modification belong to the scope of the claims in the present invention and equivalent technologies thereof
Within, then the present invention is also intended to comprise these change and modification.
Claims (10)
1. a variable gain amplifier, it is characterised in that include gain control unit and phase compensation unit, wherein, institute
State gain control unit and include one group or two group transistors:
Described gain control unit, for the bias voltage by changing each transistor in described a group or two group transistors
Size, the size that each transistor exports electric current is controlled, to change the gain of described variable gain amplifier；
Described phase compensation unit, for entering the phase place of the output electric current of each transistor in described a group or two group transistors
Row compensates, so that the phase place of the output signal of described variable gain amplifier keeps constant.
2. variable gain amplifier as claimed in claim 1, it is characterised in that if described gain control unit includes two groups of crystalline substances
Body pipe, the first group transistor in the most described two group transistors includes the first transistor and transistor seconds, and first crystal
The signal input part of pipe and the first voltage input signal and the first bias voltage are connected, the signal input part of transistor seconds with
Second voltage input signal and the second bias voltage are connected；The second group transistor in described two group transistors includes that is trimorphism
Body pipe and the 4th transistor, and the signal input part of third transistor and described first voltage input signal and described second
Bias voltage is connected, the signal input part of the 4th transistor and described second voltage input signal and described first bias voltage
It is connected；And, described first voltage input signal and described second voltage input signal are a pair differential signal；
Described gain control unit, specifically for by changing the big of described first bias voltage and described second bias voltage
Little, the size of the output electric current of each transistor in described two group transistors is controlled, puts changing described variable gain
The gain of big device.
3. variable gain amplifier as claimed in claim 2, it is characterised in that described phase compensation unit includes first phase
Compensation subelement and second phase compensation subelement:
Described first phase compensate subelement two ends respectively with the first transistor, third transistor not as described variable increasing
The signal output part of the signal output part of benefit amplifier is connected, for the first transistor, third transistor are exported electric current
Phase place compensates；
Described second phase compensate subelement two ends respectively with transistor seconds, the 4th transistor not as described variable increasing
The signal output part of the signal output part of benefit amplifier is connected, for transistor seconds, the 4th transistor are exported electric current
Phase place compensates.
4. variable gain amplifier as claimed in claim 3, it is characterised in that each phase compensation subelement includes an electricity
Hold, or, including an electric capacity and the resistance that is in series with this electric capacity.
5. variable gain amplifier as claimed in claim 4, it is characterised in that the electric capacity in each phase compensation subelement
Capacitance is not less than setting threshold value.
6. variable gain amplifier as claimed in claim 1 or 2, it is characterised in that described variable gain amplifier also includes:
Degeneration, for the linearity of the output electric current by changing each transistor in described a group or two group transistors,
Change the linearity of the output signal of described variable gain amplifier.
7. variable gain amplifier as claimed in claim 6, it is characterised in that described degeneration includes resistance and/or electricity
Sense.
8. variable gain amplifier as claimed in claim 2, it is characterised in that described first bias voltage and described second
Bias voltage enables to size sum and transistor seconds, the 4th crystalline substance of the output electric current of the first transistor, third transistor
The size sum of the output electric current of body pipe is equal, and is the fixed value of a setting.
9. variable gain amplifier as claimed in claim 1, it is characterised in that
Described gain control unit, specifically for changing described one group or two by simulation control and/or numerically controlled mode
The size of the bias voltage of each transistor in group transistor.
10. variable gain amplifier as claimed in claim 1, it is characterised in that each crystalline substance in described gain control unit
Body pipe is audion or field effect transistor.
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| CN114499419A (en) * | 2022-04-18 | 2022-05-13 | 成都嘉纳海威科技有限责任公司 | Novel transistor combiner structure amplifier |
| CN114499419B (en) * | 2022-04-18 | 2022-08-16 | 成都嘉纳海威科技有限责任公司 | Transistor combiner structure amplifier |
| CN116455335A (en) * | 2023-06-16 | 2023-07-18 | 微龛(广州)半导体有限公司 | Programmable gain amplifier, analog-to-digital converter and chip |
| CN116455335B (en) * | 2023-06-16 | 2023-08-22 | 微龛(广州)半导体有限公司 | Programmable gain amplifier, analog-to-digital converter and chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109831171A (en) | 2019-05-31 |
| CN109831171B (en) | 2024-06-04 |
| CN106100598B (en) | 2019-02-05 |
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