CN106098140A

CN106098140A - A kind of PTC thermistor slurry based on stainless steel substrate and preparation method thereof

Info

Publication number: CN106098140A
Application number: CN201610342981.7A
Authority: CN
Inventors: 高丽萍; 苏冠贤
Original assignee: Dongguan Corehelm Electronic Material Technology Co Ltd
Current assignee: Dongguan Corehelm Electronic Material Technology Co Ltd
Priority date: 2016-05-23
Filing date: 2016-05-23
Publication date: 2016-11-09

Abstract

The invention discloses a kind of PTC thermistor slurry based on stainless steel substrate and preparation method thereof, this PTC thermistor slurry includes inorganic adhesive phase, complex function phase, organic carrier, and inorganic adhesive is by SiO mutually₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃, the leadless crystallizing glass powder that formed of rare earth oxide, Nucleating Agent, complex function is mutually by the composite powder being made up of micro-silver powder, nanometer silver powder, doping ruthenic acid copper powder, and organic carrier is the mixture being made up of organic solvent, macromolecule thickener, dispersant, defoamer, thixotropic agent；PTC thermistor slurry sheet resistance is high and adjustable, temperature-coefficient of electrical resistance is high and adjustable for this, printing characteristic and burn till characteristic good and can match with insulating stainless steel substrate.This preparation method include successively preparing inorganic adhesive phase, preparation complex function phase, prepare organic carrier, prepared by resistance slurry, this preparation method can effectively produce prepares above-mentioned PTC thermistor slurry.

Description

A kind of PTC thermistor slurry based on stainless steel substrate and preparation method thereof

Technical field

The present invention relates to technical field of electronic materials, particularly relate to a kind of PTC thermistor based on stainless steel substrate slurry Material and preparation method thereof.

Background technology

Thick-film thermistor integrates thick film technology, electronic technology and temperature-sensitive technology, is to realize electronic product chip type With a kind of Technology of miniaturization, use traditional thick film circuit processing technology, the PTC thermistor slurry modulated is adopted Be printed on substrate by the mode of silk screen printing, drying, sintering form, the thick-film thermistor of making have volume little, resistance Be worth adjustable, response good, the advantage such as reproducible.

PTC thermistor increases relative to the rising of temperature due to its resistance, so by as automatic control type heater, mistake Overcurrent protection element and temperature sensor etc. utilize.All the time, PTC thermistor is a kind of by the rare earth element of trace Etc. the Barium metatitanate. (BaTiO making an addition to main constituent₃In) and make the critesistor of its semiconductor transformation, it is low below Curie temperature Resistance, but the drastically high impedance of several order of magnitude is had at the above resistance of Curie temperature.At present, practical critesistor In, semistor mainly has barium titanate [-Base, platinum, copper, monocrystal silicon etc., is wherein mixed by Barium metatitanate. Miscellaneous then high temperature semiconductors, for saltant type semistor, when temperature reaches a certain value, its resistivity meeting The several order of magnitude is increased dramatically, thus general with as circuit protecting switch effect.

But, owing to Barium metatitanate. room temperature resistivity is high, thus the application under high current capacity is restricted, simultaneously by In its material itself and defective workmanship, causing the congenital problems such as depleted power, current range of application is limited.Positive temperature FACTOR P TC heat Quick resistive element is poor because of its processing technology, and element sensitivity is low, mostly uses at microelectronic, it is difficult to big in electric heating field Area is promoted.Platinum, copper, monocrystal silicon are then linear PTC critesistor, and platinum resistance thermistor is the sensitivity utilizing noble metal platinum to temperature Characteristic, can make thread or membranaceous, there have been developed thin film chip platinum resistance in recent years, and the feature of platinum resistance thermistor is resistance temperature Degree characteristics linearity degree is good, uses temperature range width, good stability, precision height, dependable performance, but cost is high；Copper also can do temperature-sensitive Resistance material, and temperature-coefficient of electrical resistance is bigger than platinum resistance, but because copper easily aoxidizes, therefore it uses temperature the highest, adds the electricity of copper Resistance rate is the highest, is generally used for the occasion that precision is the highest, temperature is relatively low；Monocrystal silicon resistance has linearly in certain temperature range The advantages such as good, highly sensitive, fast response time, but its processing technology is complex, relatively costly.

It addition, for current PTC thermistor slurry there is also sheet resistance bigger time, the deficiency that TCR is the lowest, can not meet height Resistance, high TCR critesistor Production requirement.

Summary of the invention

Present invention aims to the deficiencies in the prior art and a kind of PTC temperature-sensitive based on stainless steel substrate electricity is provided Resistance paste, should have the advantage that sheet resistance was high and adjustable, resistance temperature system by PTC thermistor slurry based on stainless steel substrate Count high and adjustable, printing characteristic and burn till characteristic good and can match with insulating stainless steel substrate.

Another object of the present invention is to provide the preparation side of a kind of PTC thermistor slurry based on stainless steel substrate Method, this preparation method can produce effectively prepares above-mentioned PTC thermistor slurry.

For reaching above-mentioned purpose, the present invention is achieved through the following technical solutions.

A kind of PTC thermistor slurry based on stainless steel substrate, stainless steel substrate is stainless steel tube or corrosion resistant plate, This PTC thermistor slurry includes the material of following weight portion, particularly as follows:

Inorganic adhesive phase 10-20%

Complex function phase 50%-70%

Organic carrier 10%-40%；

Wherein, inorganic adhesive is leadless crystallizing glass powder mutually, and leadless crystallizing glass powder is by SiO₂、MgO、B₂O₃、A1₂O₃、 Bi₂O₃, the mixture that formed of rare earth oxide, Nucleating Agent, inorganic adhesive mutually in SiO₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃, rare earth Oxide, the weight portion of seven kinds of materials of Nucleating Agent be followed successively by 20%-70%, 10%-50%, 1%-15%, 5%-30%, 10%-30%, 1%-10%, 1%-10%；

Complex function is mutually by the composite powder being made up of micro-silver powder, nanometer silver powder, doping ruthenic acid copper powder, the particle diameter of micro-silver powder Value is 1 μm-3 μm, and the particle size values of nanometer silver powder is 20nm-50nm, and the particle size values of doping ruthenic acid copper powder is 1 μm-3 μm, compound merit Can mutually in micro-silver powder, nanometer silver powder, the weight portion of doping three kinds of materials of ruthenic acid copper powder be followed successively by 5%-50%, 5%-20%, 30%-90%；

Organic carrier is the mixture being made up of organic solvent, macromolecule thickener, dispersant, defoamer, thixotropic agent, organic In carrier, organic solvent, macromolecule thickener, dispersant, defoamer, the weight portion of five kinds of materials of thixotropic agent are followed successively by 70%- 80%, 15%-20%, 1%-5%, 1%-5%, 1%-5%.

Wherein, described doping ruthenic acid copper powder is by ruthenic oxide, copper oxide and the solid phase synthesis of p-type semiconductor oxide Reaction is doped, by ruthenic oxide, copper oxide and p-type semiconductor oxide by certain part by weight through batch mixing, ball milling, baking After doing, pulverizing, sieve, under 900 DEG C of-1200 DEG C of high temperature, prepare doping ruthenic acid copper powder body, doping through solid phase synthesis Ruthenic oxide in ruthenic acid copper powder, copper oxide, the weight portion of three kinds of materials of p-type semiconductor oxide be followed successively by 58%-75%, 15%-41.5%, 0.5%-10%.

Wherein, described p-type semiconductor oxide is Nb₂O₅、Bi₂O₃、Cu₂O、Y₂O₃、La₂O₃、CeO₂、Sm₂O₃、Gd₂O₃、 Nd₂O₃、Dy₂O₃、Eu₂O₃In the mixture that formed of a kind of or at least two.

Wherein, described rare earth oxide is CeO₂、Sm₂O₃、Gd₂O₃、Nd₂O₃、Dy₂O₃、Eu₂O₃In one or at least two Plant the mixture formed.

Wherein, described Nucleating Agent is TiO₂、ZrO₂、MoO₃、Fe₂O₃、CaF₂、P₂O₅, one in ZnO or at least two The mixture formed.

Wherein, described organic solvent be terpineol, butyl carbitol, butyl carbitol acetate, tributyl citrate, 1, 4-butyrolactone, Isosorbide-5-Nitrae-dioxane, mixed dibasic acid ester, N-Methyl pyrrolidone, DMF, N, N-dimethyl One in acetamide, dimethyl sulfoxide, dimethyl adipate, diethylene adipate, glycol dimethyl ether monoacetate or extremely Few two kinds of mixture formed.

Wherein, described macromolecule thickener be ethyl cellulose, hydroxyethyl cellulose, polyvinyl alcohol, polyvinyl acetate, One in polyvinyl acetal, polyvinyl butyral resin, polyvinylpyrrolidone, polyacrylamide or at least two institute The mixture of composition.

Wherein, one during described dispersant is triammonium citrate, polymethyl acid amide, Isosorbide-5-Nitrae-dihydroxy sulfanilic acid or The mixture that person's at least two is formed.

Wherein, described defoamer is the one in polydimethylsiloxane, organic silicon modified by polyether, and described thixotropic agent is hydrogen Change the one in Oleum Ricini, polyamide wax.

The preparation method of a kind of PTC thermistor slurry based on stainless steel substrate, includes following processing step, specifically For:

A, prepare inorganic adhesive phase: by SiO₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃, rare earth oxide, Nucleating Agent is in three-dimensional material mixer Middle mix homogeneously, SiO in mixture₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃, rare earth oxide, the weight of seven kinds of materials in Nucleating Agent Part is followed successively by 20%-70%, 10%-50%, 1%-15%, 5%-30%, 10%-30%, 1%-10%, 1%-10%, mixed Then at smelting furnace melting after closing uniformly, smelting temperature is 1100 DEG C-1500 DEG C, and temperature retention time is i.e. to obtain glass melts in 3-6 hour, Then glass melts carried out shrend and obtain glass, finally with distilled water for medium to glass ball milling 4-6 hour, i.e. obtaining grain Footpath value is the leadless crystallizing glass powder of 3 μm-5 μm；

B, preparation complex function phase: by micro-silver powder, nanometer silver powder, doping ruthenic acid copper powder mix homogeneously with preparation silver-doping ruthenium The copper powder compounded powder of acid, in composite powder, micro-silver powder, nanometer silver powder, the weight portion of doping three kinds of materials of ruthenic acid copper powder are followed successively by 5%- 50%, 5%-20%, 30%-90%, the particle size values of micro-silver powder be 1 μm-3 μm, the particle size values of nanometer silver powder be 20nm- 50nm, the particle size values of doping ruthenic acid copper powder are 1 μm-3 μm；

C, prepare organic carrier: by organic solvent, macromolecule thickener, dispersant, defoamer, thixotropic agent are molten in 80 DEG C of water-baths Solution to obtain organic carrier, and by adjust macromolecule thickener content so that the viscosity of organic carrier controls In the range of 200mPa s-300mPa s, wherein, organic solvent in organic carrier, macromolecule thickener, dispersant, defoamer, The weight portion of five kinds of materials of thixotropic agent is followed successively by 70%-80%, 15%-20%, 1%-5%, 1%-5%, 1%-5%；

Prepared by d, resistance slurry: by inorganic adhesive phase, complex function phase, organic carrier dispersed with stirring in container, enter the most again Row three-roll rolling, to obtain the range of viscosities PTC resistor slurry for 100Pa s ± 20Pa s, wherein, in PTC resistor slurry Inorganic adhesive phase, complex function phase, the weight portion of three kinds of materials of organic carrier are followed successively by 10%-20%, 50%-70%, 10%- 40%.

The invention have the benefit that a kind of PTC thermistor slurry based on stainless steel substrate of the present invention, no Rust steel substrate is stainless steel tube or corrosion resistant plate, and this PTC thermistor slurry includes the material of following weight portion, specifically For:

Inorganic adhesive phase 10-20%

Complex function phase 50%-70%

Organic carrier 10%-40%；

Wherein, inorganic adhesive is leadless crystallizing glass powder mutually, and leadless crystallizing glass powder is by SiO₂、MgO、B₂O₃、Al₂O₃、 Bi₂O₃, the mixture that formed of rare earth oxide, Nucleating Agent, inorganic adhesive mutually in SiO₂、MgO、B₂O₃、Al₂O₃、Bi₂O₃, rare earth Oxide, the weight portion of seven kinds of materials of Nucleating Agent be followed successively by 20%-70%, 10%-50%, 1%-15%, 5%-30%, 10%-30%, 1%-10%, 1%-10%；

Organic carrier is the mixture being made up of organic solvent, macromolecule thickener, dispersant, defoamer, thixotropic agent, organic In carrier, organic solvent, macromolecule thickener, dispersant, defoamer, the weight portion of five kinds of materials of thixotropic agent are followed successively by 70%- 80%, 15%-20%, 1%-5%, 1%-5%, 1%-5%.By above-mentioned material proportion, should PTC based on stainless steel substrate Thermistor has the advantage that sheet resistance is high and adjustable, temperature-coefficient of electrical resistance is high and adjustable, printing characteristic and burn till characteristic Excellent and can match with insulating stainless steel substrate.

Another of the present invention has the beneficial effect that a kind of PTC thermistor based on stainless steel substrate of the present invention is starched The preparation method of material, it includes following processing step, particularly as follows: a, prepare inorganic adhesive phase: by SiO₂、MgO、B₂O₃、 Al₂O₃、Bi₂O₃, rare earth oxide, Nucleating Agent mix homogeneously in three-dimensional material mixer, SiO in mixture₂、MgO、B₂O₃、Al₂O₃、 Bi₂O₃, rare earth oxide, in Nucleating Agent the weight portion of seven kinds of materials be followed successively by 20%-70%, 10%-50%, 1%-15%, 5%-30%, 10%-30%, 1%-10%, 1%-10%, then at smelting furnace melting after mix homogeneously, smelting temperature is 1100 DEG C- 1500 DEG C, temperature retention time is within 3-6 hour, i.e. to obtain glass melts, then glass melts is carried out shrend and obtains glass, finally With distilled water for medium to glass ball milling 4-6 hour, i.e. obtain the leadless crystallizing glass powder that particle size values is 3 μm-5 μm；B, preparation Complex function phase: micro-silver powder, nanometer silver powder, doping ruthenic acid copper powder mix homogeneously is copper powder compounded with preparation silver-doping ruthenic acid Powder, in composite powder, micro-silver powder, nanometer silver powder, the weight portion of doping three kinds of materials of ruthenic acid copper powder are followed successively by 5%-50%, 5%- 20%, 30%-90%, the particle size values of micro-silver powder be 1 μm-3 μm, the particle size values of nanometer silver powder be 20nm-50nm, doping ruthenic acid The particle size values of copper powder is 1 μm-3 μm；C, prepare organic carrier: by organic solvent, macromolecule thickener, dispersant, defoamer, touches Become agent in 80 DEG C of water-baths, dissolve to obtain organic carrier, and by adjusting the content of macromolecule thickener, so that organic carrier Viscosity control in the range of 200mPa s-300mPa s, wherein, organic solvent in organic carrier, macromolecule thickener, point Powder, defoamer, the weight portion of five kinds of materials of thixotropic agent be followed successively by 70%-80%, 15%-20%, 1%-5%, 1%-5%, 1%-5%；Prepared by d, resistance slurry: by inorganic adhesive phase, complex function phase, organic carrier dispersed with stirring in container, then Carrying out three-roll rolling again, to obtain the range of viscosities PTC resistor slurry for 100Pa s ± 20Pa s, wherein, PTC resistor is starched Inorganic adhesive phase in material, complex function phase, the weight portion of three kinds of materials of organic carrier be followed successively by 10%-20%, 50%-70%, 10%-40%.This preparation method can produce effectively prepares above-mentioned PTC thermistor slurry, and prepared by PTC heat Quick resistance slurry has the advantage that sheet resistance is high and adjustable, temperature-coefficient of electrical resistance is high and adjustable, printing characteristic and to burn till characteristic excellent Good and can match with insulating stainless steel substrate.

Detailed description of the invention

Below in conjunction with specific embodiment, the present invention will be described.

Embodiment one, a kind of PTC thermistor slurry based on stainless steel substrate, include the material of following weight portion, Particularly as follows:

Inorganic adhesive phase 15%

Complex function phase 70%

Organic carrier 15%；

Stainless steel substrate is stainless steel tube；

Inorganic adhesive is leadless crystallizing glass powder mutually, and leadless crystallizing glass powder is by SiO₂、MgO、B₂O₃、Al₂O₃、Bi₂O₃、CeO₂、 TiO₂The mixture formed, inorganic adhesive middle SiO mutually₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、CeO₂、TiO₂The weight of seven kinds of materials Part is followed successively by 40%, 15%, 15%, 12%, 13%, 2.5%, 2.5%；

Complex function is mutually by the composite powder being made up of micro-silver powder, nanometer silver powder, doping ruthenic acid copper powder, the particle diameter of micro-silver powder Value be 1 μm-3 μm, the particle size values of nanometer silver powder be 20nm-50nm, the particle size values of doping ruthenic acid copper powder be 1 μm-3 μm, compound merit Middle micro-silver powder, nanometer silver powder, the weight portion of doping three kinds of materials of ruthenic acid copper powder can be followed successively by 48%, 4%, 48% mutually；

Organic carrier is main solvent terpineol, thickening agent ethyl cellulose, triammonium citrate, polydimethylsiloxane, hydrogenation castor The mixture that Oleum Sesami is formed, terpineol, ethyl cellulose, triammonium citrate, polydimethylsiloxane, hydrogenation in organic carrier The weight portion of five kinds of materials of Oleum Ricini is followed successively by 80%, 17%, 1%, 1%, 1%.

By above-mentioned material proportion, the PTC thermistor slurry of the present embodiment one has following performance parameter, particularly as follows: Viscosity 105Pa s/RPM, thickness 12 μm, sheet resistance 115 ± 2m Ω/, sheet resistance reheating rate of change ＜ 5%, temperature-coefficient of electrical resistance 2800±100×10^-6/ DEG C, tensile strength ＞ 16 (N/mm²)；So, the PTC thermistor slurry of the present embodiment one have with Lower advantage, particularly as follows: sheet resistance is high and adjustable, temperature-coefficient of electrical resistance is high and adjustable, printing characteristic and burn till characteristic good and can Match with insulating stainless steel substrate.

Wherein, the PTC thermistor slurry based on stainless steel substrate of the present embodiment one can use following preparation method It is prepared from, concrete, the preparation method of a kind of PTC thermistor slurry based on stainless steel substrate, include following technique Step:

A, prepare inorganic adhesive phase: by SiO₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、CeO₂、TiO₂In three-dimensional material mixer, mixing is all Even, SiO in mixture₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、CeO₂、TiO₂In the weight portion of seven kinds of materials be followed successively by 40%, 15%, 15%, 12%, 13%, 2.5%, 2.5%, then at smelting furnace melting after mix homogeneously, smelting temperature is 1200 DEG C, and temperature retention time is Within 3 hours, i.e. obtain glass melts, then glass melts carried out shrend and obtain glass, finally with distilled water for medium to glass Ball milling 6 hours, i.e. obtains the leadless crystallizing glass powder that particle size values is 3 μm-5 μm；

B, preparation complex function phase: first prepare linear positive temperature coefficient doping ruthenic acid copper powder, by ruthenic oxide, copper oxide and p Type semiconductor oxide Nb₂O₅By certain part by weight through batch mixing, ball milling, dry, pulverize, sieve after, react under 1100 DEG C of high temperature 6h, utilizes solid phase synthesis by Nb₂O₅It is incorporated into RuO₂Lattice in, prepare doping ruthenic acid copper powder body standby, and doping ruthenic acid Ruthenic oxide, copper oxide, Nb in copper powder₂O₅The weight portion of three kinds of materials is followed successively by 75%, 15%, 10%；By micro-silver powder, receive Rice argentum powder, doping ruthenic acid copper powder mix homogeneously are with preparation silver-doping copper powder compounded powder of ruthenic acid, micro-silver powder, nanometer in composite powder Argentum powder, the weight portion of doping three kinds of materials of ruthenic acid copper powder are followed successively by 48%, 4%, 48%, and the particle size values of micro-silver powder is 1 μm-3 μ M, the particle size values of nanometer silver powder are 20nm-50nm, the particle size values of doping ruthenic acid copper powder is 1 μm-3 μm；

C, prepare organic carrier: by main solvent terpineol, thickening agent ethyl cellulose, triammonium citrate, polydimethylsiloxane, Castor oil hydrogenated is by a certain percentage through 80 DEG C of heating in water bath, and mechanical agitation is until ethyl cellulose has been completely dissolved simultaneously Airborne body, and by adjusting the content of ethyl cellulose, so that the viscosity of organic carrier controls at 200mPa s-300mPa s In the range of, wherein, terpineol, ethyl cellulose, triammonium citrate, polydimethylsiloxane, castor oil hydrogenated in organic carrier The weight portion of five kinds of materials is followed successively by 80%, 17%, 1%, 1%, 1%；

Prepared by d, resistance slurry: by inorganic adhesive phase, complex function phase, organic carrier dispersed with stirring in container, enter the most again Row three-roll rolling, to obtain the range of viscosities resistance slurry for 100Pa s ± 20Pa s, wherein, inorganic viscous in resistance slurry Connect phase, complex function phase, the weight portion of three kinds of materials of organic carrier are followed successively by 15%, 70%, 15%.

Being designed by above-mentioned processing step, the preparation method being somebody's turn to do PTC thermistor slurry based on stainless steel substrate can The PTC thermistor slurry based on stainless steel substrate of the present embodiment one is prepared in production effectively, and prepared by PTC heat Quick resistance slurry has the advantage that sheet resistance is high and adjustable, temperature-coefficient of electrical resistance is high and adjustable, printing characteristic and to burn till characteristic excellent Good and can match with insulating stainless steel substrate.

Embodiment two, a kind of PTC thermistor slurry based on stainless steel substrate, particularly as follows:

Inorganic adhesive phase 17%

Complex function phase 70%

Organic carrier 13%；

Stainless steel substrate is corrosion resistant plate；

Inorganic adhesive is leadless crystallizing glass powder mutually, and leadless crystallizing glass powder is by SiO₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Sm₂O₃、 ZrO₂The mixture formed, inorganic adhesive middle SiO mutually₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Sm₂O₃、ZrO₂The weight of seven kinds of materials Part is followed successively by 45%, 12%, 13%, 14%, 11%, 3%, 2%；

Complex function is mutually by the composite powder being made up of micro-silver powder, nanometer silver powder, doping ruthenic acid copper powder, the particle diameter of micro-silver powder Value be 1 μm-3 μm, the particle size values of nanometer silver powder be 20nm-50nm, the particle size values of doping ruthenic acid copper powder is 1 μm-3 μm, compound merit Middle micro-silver powder, nanometer silver powder, the weight portion of doping three kinds of materials of ruthenic acid copper powder can be followed successively by 40%, 5%, 55% mutually；

Organic carrier is main solvent N-Methyl pyrrolidone, thickening agent ethyl cellulose, polymethyl acid amide, poly dimethyl silicon The mixture that oxygen alkane, castor oil hydrogenated are formed, N-Methyl pyrrolidone, ethyl cellulose, polymethyl in organic carrier Acid amide, polydimethylsiloxane, the weight portion of five kinds of materials of castor oil hydrogenated are followed successively by 80%, 16%, 2%, 1%, 1%.

By above-mentioned material proportion, the PTC thermistor slurry of the present embodiment two has following performance parameter, particularly as follows: Viscosity 110Pa s/RPM, thickness 12 μm, sheet resistance 135 ± 2m Ω/, sheet resistance reheating rate of change ＜ 5%, temperature-coefficient of electrical resistance 3000±100×10^-6/ DEG C, tensile strength ＞ 16 (N/mm²)；So, the PTC thermistor slurry of the present embodiment one have with Lower advantage, particularly as follows: sheet resistance is high and adjustable, temperature-coefficient of electrical resistance is high and adjustable, printing characteristic and burn till characteristic good and can Match with insulating stainless steel substrate.

Wherein, the PTC thermistor slurry based on stainless steel substrate of the present embodiment two can use following preparation method It is prepared from, concrete, the preparation method of a kind of PTC thermistor slurry based on stainless steel substrate, include following technique Step:

A, prepare inorganic adhesive phase: by SiO₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Sm₂O₃、ZrO₂In three-dimensional material mixer, mixing is all Even, SiO in mixture₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Sm₂O₃、ZrO₂In the weight portion of seven kinds of materials be followed successively by 45%, 12%, 13%, 14%, 11%, 3%, 2%, then at smelting furnace melting after mix homogeneously, smelting temperature is 1400 DEG C, temperature retention time It is within 4 hours, i.e. to obtain glass melts, then glass melts is carried out shrend and obtain glass, finally with distilled water for medium to glass Glass ball milling 6 hours, i.e. obtains the leadless crystallizing glass powder that particle size values is 3 μm-5 μm；

B, preparation complex function phase: first prepare linear positive temperature coefficient doping ruthenic acid copper powder, by ruthenic oxide, copper oxide and p Type semiconductor oxide Bi₂O₃By certain part by weight through batch mixing, ball milling, dry, pulverize, sieve after, react under 1200 DEG C of high temperature 6h, utilizes solid phase synthesis by Bi₂O₃It is incorporated into RuO₂Lattice in, prepare doping ruthenic acid copper powder body standby, and doping ruthenic acid Ruthenic oxide, copper oxide, Bi in copper powder₂O₃The weight portion of three kinds of materials is followed successively by 65%, 30%, 5%；By micro-silver powder, nanometer Argentum powder, doping ruthenic acid copper powder mix homogeneously are with preparation silver-doping copper powder compounded powder of ruthenic acid, micro-silver powder, nanometer silver in composite powder Powder, doping three kinds of materials of ruthenic acid copper powder weight portion be followed successively by 40%, 5%, 55%, the particle size values of micro-silver powder be 1 μm-3 μm, The particle size values of nanometer silver powder is 20nm-50nm, the particle size values of doping ruthenic acid copper powder is 1 μm-3 μm；

C, prepare organic carrier: by main solvent N-Methyl pyrrolidone, thickening agent ethyl cellulose, polymethyl acid amide, poly- Dimethyl siloxane, castor oil hydrogenated dissolve to obtain organic carrier in 80 DEG C of water-baths, and by adjusting polyvinylpyrrolidine The content of ketone, so that the viscosity of organic carrier controls in the range of 200mPa s-300mPa s, wherein, N-in organic carrier Methyl pyrrolidone, polyvinylpyrrolidone, polymethyl acid amide, polydimethylsiloxane, five kinds of materials of castor oil hydrogenated Weight portion be followed successively by 80%, 16%, 2%, 1%, 1%；

Prepared by d, resistance slurry: by inorganic adhesive phase, complex function phase, organic carrier dispersed with stirring in container, enter the most again Row three-roll rolling, to obtain the range of viscosities resistance slurry for 100Pa s ± 20Pa s, wherein, inorganic viscous in resistance slurry Connect phase, complex function phase, the weight portion of three kinds of materials of organic carrier are followed successively by 17%, 70%, 13%.

The performance test of the thick film circuit PTC thermistor slurry of the present embodiment:

Being designed by above-mentioned processing step, the preparation method being somebody's turn to do PTC thermistor slurry based on stainless steel substrate can be effective The PTC thermistor slurry based on stainless steel substrate of the present embodiment two is prepared in ground production, and prepared by PTC temperature-sensitive electricity Resistance paste has the advantage that sheet resistance is high and adjustable, temperature-coefficient of electrical resistance is high and adjustable, printing characteristic and burn till characteristic good and Can match with insulating stainless steel substrate.

Embodiment three, a kind of PTC thermistor slurry based on stainless steel substrate, include the material of following weight portion, Particularly as follows:

Inorganic adhesive phase 17.5%

Complex function phase 60%

Organic carrier 22.5%；

Stainless steel substrate is stainless steel tube；

Inorganic adhesive is leadless crystallizing glass powder mutually, and leadless crystallizing glass powder is by SiO₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Gd₂O₃、 P₂O₅The mixture formed, inorganic adhesive middle SiO mutually₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Gd₂O₃、P₂O₅The weight of seven kinds of materials Part is followed successively by 55%, 10%, 10%, 10%, 10%, 2.5%, 2.5%；

Complex function is mutually by the composite powder being made up of micro-silver powder, nanometer silver powder, doping ruthenic acid copper powder, the particle diameter of micro-silver powder Value be 1 μm-3 μm, the particle size values of nanometer silver powder be 20nm-50nm, the particle size values of doping ruthenic acid copper powder is 1 μm-3 μm, compound merit Middle micro-silver powder, nanometer silver powder, the weight portion of doping three kinds of materials of ruthenic acid copper powder can be followed successively by 40%, 10%, 50% mutually；Organic Carrier is main solvent Isosorbide-5-Nitrae-dioxane, thickening agent polyvinylpyrrolidone, Isosorbide-5-Nitrae-dihydroxy sulfanilic acid, polydimethylsiloxanes The mixture that alkane, castor oil hydrogenated are formed, Isosorbide-5-Nitrae-dioxane, polyvinylpyrrolidone, Isosorbide-5-Nitrae-dihydroxy in organic carrier Sulfanilic acid, polydimethylsiloxane, the weight portion of five kinds of materials of castor oil hydrogenated are followed successively by 80%, 17%, 1%, 1%, 1%.

By above-mentioned material proportion, the PTC thermistor slurry of the present embodiment three has following performance parameter, particularly as follows: Viscosity 105Pa s/RPM, thickness 12 μm, sheet resistance 128 ± 2m Ω/, sheet resistance reheating rate of change ＜ 5%, temperature-coefficient of electrical resistance 3300±100×10^-6/ DEG C, tensile strength ＞ 16 (N/mm²)；So, the PTC thermistor slurry of the present embodiment three have with Lower advantage, particularly as follows: sheet resistance is high and adjustable, temperature-coefficient of electrical resistance is high and adjustable, printing characteristic and burn till characteristic good and can Match with insulating stainless steel substrate.

Wherein, the PTC thermistor slurry based on stainless steel substrate of the present embodiment three can use following preparation method It is prepared from, concrete, the preparation method of a kind of PTC thermistor slurry based on stainless steel substrate, include following technique Step:

A, prepare inorganic adhesive phase: by SiO₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Gd₂O₃、P₂O₅In three-dimensional material mixer, mixing is all Even, SiO in mixture₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Gd₂O₃、P₂O₅In the weight portion of seven kinds of materials be followed successively by 55%, 10%, 10%, 10%, 10%, 2.5%, 2.5%, then at smelting furnace melting after mix homogeneously, smelting temperature is 1400 DEG C, and temperature retention time is Within 4 hours, i.e. obtain glass melts, then glass melts carried out shrend and obtain glass, finally with distilled water for medium to glass Ball milling 6 hours, i.e. obtains the leadless crystallizing glass powder that particle size values is 3 μm-5 μm；

B, preparation complex function phase: first prepare linear positive temperature coefficient doping ruthenic acid copper powder, by ruthenic oxide, copper oxide and p Type semiconductor oxide Cu₂O by certain part by weight through batch mixing, ball milling, dry, pulverize, sieve after, react under 1100 DEG C of high temperature 6h, utilizes solid phase synthesis by Cu₂O is incorporated into RuO₂Lattice in, prepare doping ruthenic acid copper powder body standby, and doping ruthenic acid Ruthenic oxide, copper oxide, Cu in copper powder₂The weight portion of tri-kinds of materials of O is followed successively by 65%, 28%, 7%；By micro-silver powder, nanometer Argentum powder, doping ruthenic acid copper powder mix homogeneously are with preparation silver-doping copper powder compounded powder of ruthenic acid, micro-silver powder, nanometer silver in composite powder Powder, the weight portion of doping three kinds of materials of ruthenic acid copper powder are followed successively by 40%, 10%, 50%, and the particle size values of micro-silver powder is 1 μm-3 μ M, the particle size values of nanometer silver powder are 20nm-50nm, the particle size values of doping ruthenic acid copper powder is 1 μm-3 μm；

C, prepare organic carrier: by main solvent Isosorbide-5-Nitrae-dioxane, thickening agent polyvinylpyrrolidone, Isosorbide-5-Nitrae-dihydroxy sulfonic acid Amine, polydimethylsiloxane, castor oil hydrogenated dissolve to obtain organic carrier in 80 DEG C of water-baths, and by adjusting polyethylene pyrrole The content of pyrrolidone, so that the viscosity of organic carrier controls in the range of 200mPa s-300mPa s, wherein, organic carrier Middle N-Methyl pyrrolidone, polyvinylpyrrolidone, 1,4-dihydroxy sulfanilic acid, polydimethylsiloxane, castor oil hydrogenated five The weight portion planting material is followed successively by 80%, 17%, 1%, 1%, 1%；

Prepared by d, resistance slurry: by function phase, inorganic adhesive phase, aluminium powder, organic carrier dispersed with stirring in container, enter the most again Row three-roll rolling, to obtain the range of viscosities resistance slurry for 100Pa s ± 20Pa s, wherein, inorganic viscous in resistance slurry Connect phase, complex function phase, the weight portion of three kinds of materials of organic carrier are followed successively by 17.5%, 60%, 22.5%.

Being designed by above-mentioned processing step, the preparation method being somebody's turn to do PTC thermistor slurry based on stainless steel substrate can The PTC thermistor slurry based on stainless steel substrate of the present embodiment three is prepared in production effectively, and prepared by PTC heat Quick resistance slurry has the advantage that sheet resistance is high and adjustable, temperature-coefficient of electrical resistance is high and adjustable, printing characteristic and to burn till characteristic excellent Good and can match with insulating stainless steel substrate.

Embodiment four, a kind of PTC thermistor slurry based on stainless steel substrate, include the material of following weight portion, Particularly as follows:

Inorganic adhesive phase 20%

Complex function phase 65%

Organic carrier 15%；

Stainless steel substrate is corrosion resistant plate；

Inorganic adhesive is leadless crystallizing glass powder mutually, and leadless crystallizing glass powder is by SiO₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Nd₂O₃、 CAF₂The mixture formed, inorganic adhesive middle SiO mutually₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Nd₂O₃、CAF₂The weight of seven kinds of materials Part is followed successively by 55%, 10%, 10%, 10%, 10%, 2.5%, 2.5%；

Complex function is mutually by the composite powder being made up of micro-silver powder, nanometer silver powder, doping ruthenic acid copper powder, the particle diameter of micro-silver powder Value be 1 μm-3 μm, the particle size values of nanometer silver powder be 20nm-50nm, the particle size values of doping ruthenic acid copper powder is 1 μm-3 μm, compound merit Middle micro-silver powder, nanometer silver powder, the weight portion of doping three kinds of materials of ruthenic acid copper powder can be followed successively by 38%, 4%, 58% mutually；

Organic carrier is that main solvent N-Methyl pyrrolidone, thickening agent polyvinylpyrrolidone, polymethyl acid amide, polyethers change Property the mixture that formed of organosilicon, castor oil hydrogenated, N-Methyl pyrrolidone in organic carrier, polyvinylpyrrolidone, poly- Methacrylic acid amino, organic silicon modified by polyether, the weight portion of five kinds of materials of castor oil hydrogenated be followed successively by 80%, 17%, 1%, 1%, 1%.

By above-mentioned material proportion, the PTC thermistor slurry of the present embodiment four has following performance parameter, particularly as follows: Viscosity 109Pa s/RPM, thickness 12 μm, sheet resistance 125 ± 2m Ω/, sheet resistance reheating rate of change ＜ 5%, temperature-coefficient of electrical resistance 2400±100×10^-6/ DEG C, tensile strength ＞ 16 (N/mm²)；So, the PTC thermistor slurry of the present embodiment four have with Lower advantage, particularly as follows: sheet resistance is high and adjustable, temperature-coefficient of electrical resistance is high and adjustable, printing characteristic and burn till characteristic good and can Match with insulating stainless steel substrate.

Wherein, the PTC thermistor slurry based on stainless steel substrate of the present embodiment four can use following preparation method It is prepared from, concrete, the preparation method of a kind of PTC thermistor slurry based on stainless steel substrate, include following technique Step:

A, prepare inorganic adhesive phase: by SiO₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Nd₂O₃、CAF₂In three-dimensional material mixer, mixing is all Even, SiO in mixture₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Nd₂O₃、CAF₂In the weight portion of seven kinds of materials be followed successively by 55%, 10%, 10%, 10%, 10%, 2.5%, 2.5%, then at smelting furnace melting after mix homogeneously, smelting temperature is 1400 DEG C, insulation Time is within 4 hours, i.e. to obtain glass melts, then glass melts is carried out shrend and obtains glass, finally with distilled water as medium To glass ball milling 6 hours, i.e. obtain the leadless crystallizing glass powder that particle size values is 3 μm-5 μm；

B, preparation complex function phase: first prepare linear positive temperature coefficient doping ruthenic acid copper powder, by ruthenic oxide, copper oxide and p Type semiconductor oxide Y₂O₃By certain part by weight through batch mixing, ball milling, dry, pulverize, sieve after, react under 1100 DEG C of high temperature 6h, utilizes solid phase synthesis by Y₂O₃It is incorporated into RuO₂Lattice in, prepare doping ruthenic acid copper powder body standby, and doping ruthenic acid Ruthenic oxide, copper oxide, Y in copper powder₂O₃The weight portion of three kinds of materials is followed successively by 60%, 35%, 5%；By micro-silver powder, nanometer Argentum powder, doping ruthenic acid copper powder mix homogeneously are with preparation silver-doping copper powder compounded powder of ruthenic acid, micro-silver powder, nanometer silver in composite powder Powder, doping three kinds of materials of ruthenic acid copper powder weight portion be followed successively by 38%, 4%, 58%, the particle size values of micro-silver powder be 1 μm-3 μm, The particle size values of nanometer silver powder is 20nm-50nm, the particle size values of doping ruthenic acid copper powder is 1 μm-3 μm；

C, prepare organic carrier: by main solvent N-Methyl pyrrolidone, thickening agent polyvinylpyrrolidone, polymethylacrylic acid Amine, organic silicon modified by polyether, castor oil hydrogenated dissolve to obtain organic carrier in 80 DEG C of water-baths, and by adjusting polyethylene pyrrole The content of pyrrolidone, so that the viscosity of organic carrier controls in the range of 200mPa s-300mPa s, wherein, organic carrier Middle N-Methyl pyrrolidone, polyvinylpyrrolidone, polymethyl acid amide, organic silicon modified by polyether, castor oil hydrogenated five kinds The weight portion of material is followed successively by 80%, 17%, 1%, 1%, 1%；

Prepared by d, resistance slurry: by function phase, inorganic adhesive phase, zinc powder, organic carrier dispersed with stirring in container, enter the most again Row three-roll rolling, to obtain the range of viscosities resistance slurry for 100Pa s ± 20Pa s, wherein, inorganic viscous in resistance slurry Connect phase, complex function phase, the weight portion of three kinds of materials of organic carrier are followed successively by 20%, 65%, 15%.

Designed by above-mentioned processing step, this preparation method can effectively production prepare the present embodiment four based on stainless The PTC thermistor slurry of steel substrate.

Embodiment five, a kind of PTC thermistor slurry based on stainless steel substrate, include the material of following weight portion, Particularly as follows:

Inorganic adhesive phase 17%

Complex function phase 63%

Organic carrier 20%；

Stainless steel substrate is stainless steel tube；

Inorganic adhesive is leadless crystallizing glass powder mutually, and leadless crystallizing glass powder is by SiO₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Dy₂O₃、 The mixture that ZnO is formed, inorganic adhesive middle SiO mutually₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Dy₂O₃, the weight of seven kinds of materials of ZnO Part is followed successively by 55%, 10%, 10%, 10%, 10%, 2.5%, 2.5%；

Complex function is mutually by the composite powder being made up of micro-silver powder, nanometer silver powder, doping ruthenic acid copper powder, the particle diameter of micro-silver powder Value be 1 μm-3 μm, the particle size values of nanometer silver powder be 20nm-50nm, the particle size values of doping ruthenic acid copper powder be 1 μm-3 μm, compound merit Middle micro-silver powder, nanometer silver powder, the weight portion of doping three kinds of materials of ruthenic acid copper powder can be followed successively by 25%, 5%, 70% mutually；

Organic carrier is main solvent mixed dibasic acid ester, thickening agent polyvinylpyrrolidone, polymethyl acid amide, polyether-modified The mixture that organosilicon, polyamide wax are formed, N-Methyl pyrrolidone, polyvinylpyrrolidone, poly-methyl in organic carrier Acrylic amine, organic silicon modified by polyether, the weight portion of five kinds of materials of polyamide wax be followed successively by 75%, 22%, 1.5%, 1%, 0.5%.

By above-mentioned material proportion, the PTC thermistor slurry of the present embodiment five has following performance parameter, particularly as follows: Viscosity 105Pa s/RPM, thickness 12 μm, sheet resistance 128 ± 2m Ω/, sheet resistance reheating rate of change ＜ 5%, temperature-coefficient of electrical resistance 3300±100×10^-6/ DEG C, tensile strength ＞ 16 (N/mm²)；So, the PTC thermistor slurry of the present embodiment five have with Lower advantage, particularly as follows: sheet resistance is high and adjustable, temperature-coefficient of electrical resistance is high and adjustable, printing characteristic and burn till characteristic good and can Match with insulating stainless steel substrate.

Wherein, the PTC thermistor slurry based on stainless steel substrate of the present embodiment five can use following preparation method It is prepared from, concrete, the preparation method of a kind of PTC thermistor slurry based on stainless steel substrate, include following technique Step:

A, prepare inorganic adhesive phase: by SiO₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Dy₂O₃, ZnO mixes all in three-dimensional material mixer Even, SiO in mixture₂、MgO、B₂O₃、Al₂O₃、Bi₂O₃、Dy₂O₃, in ZnO the weight portion of seven kinds of materials be followed successively by 55%, 10%, 10%, 10%, 10%, 2.5%, 2.5%, then at smelting furnace melting after mix homogeneously, smelting temperature is 1400 DEG C, and temperature retention time is Within 5 hours, i.e. obtain glass melts, then glass melts carried out shrend and obtain glass, finally with distilled water for medium to glass Ball milling 6 hours, i.e. obtains the leadless crystallizing glass powder that particle size values is 3 μm-5 μm；

B, preparation complex function phase: first prepare linear positive temperature coefficient doping ruthenic acid copper powder, by ruthenic oxide, copper oxide and p Type semiconductor oxide La₂O₃By certain part by weight through batch mixing, ball milling, dry, pulverize, sieve after, react under 1100 DEG C of high temperature 6h, utilizes solid phase synthesis by La₂O₃It is incorporated into RuO₂Lattice in, prepare doping ruthenic acid copper powder body standby, and doping ruthenic acid Ruthenic oxide, copper oxide, La in copper powder₂O₃The weight portion of three kinds of materials is followed successively by 60%, 35%, 5%；By micro-silver powder, receive Rice argentum powder, doping ruthenic acid copper powder mix homogeneously are with preparation silver-doping copper powder compounded powder of ruthenic acid, micro-silver powder, nanometer in composite powder Argentum powder, the weight portion of doping three kinds of materials of ruthenic acid copper powder are followed successively by 25%, 5%, 70%, and the particle size values of micro-silver powder is 1 μm-3 μ M, the particle size values of nanometer silver powder are 20nm-50nm, the particle size values of doping ruthenic acid copper powder is 1 μm-3 μm；

C, prepare organic carrier: by main solvent mixed dibasic acid ester, thickening agent polyvinylpyrrolidone, polymethyl acid amide, Organic silicon modified by polyether, polyamide wax dissolve to obtain organic carrier in 80 DEG C of water-baths, and by adjusting polyvinylpyrrolidine The content of ketone, so that the viscosity of organic carrier controls in the range of 200mPa s-300mPa s, wherein, mixed in organic carrier Close dibasic acid ester, polyvinylpyrrolidone, polymethyl acid amide, organic silicon modified by polyether, the weight of five kinds of materials of polyamide wax Amount part is followed successively by 75%, 22%, 1.5%, 1%, 0.5%；

Prepared by d, resistance slurry: by function phase, inorganic adhesive phase, aluminium powder, organic carrier dispersed with stirring in container, enter the most again Row three-roll rolling, to obtain the range of viscosities resistance slurry for 100Pa s ± 20Pa s, wherein, inorganic viscous in resistance slurry Connect phase, complex function phase, the weight portion of three kinds of materials of organic carrier are followed successively by 17%, 63%, 20%.

Designed by above-mentioned processing step, this preparation method can effectively production prepare the present embodiment five based on stainless The PTC thermistor slurry of steel substrate.

Embodiment six, a kind of PTC thermistor slurry based on stainless steel substrate, include the material of following weight portion, Particularly as follows:

Inorganic adhesive phase 12%

Complex function phase 68%

Organic carrier 20%；

Stainless steel substrate is corrosion resistant plate；

Inorganic adhesive is leadless crystallizing glass powder mutually, and leadless crystallizing glass powder is by SiO₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Eu₂O₃、 TiO₂The mixture formed, inorganic adhesive middle SiO mutually₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Eu₂O₃、TiO₂The weight of seven kinds of materials Part is followed successively by 55%, 10%, 10%, 10%, 10%, 2.5%, 2.5%；

Complex function is mutually by the composite powder being made up of micro-silver powder, nanometer silver powder, doping ruthenic acid copper powder, the particle diameter of micro-silver powder Value be 1 μm-3 μm, the particle size values of nanometer silver powder be 20nm-50nm, the particle size values of doping ruthenic acid copper powder is 1 μm-3 μm, compound merit Middle micro-silver powder, nanometer silver powder, the weight portion of doping three kinds of materials of ruthenic acid copper powder can be followed successively by 20%, 20%, 60% mutually；

Organic carrier is that main solvent N-Methyl pyrrolidone, thickening agent polyvinyl butyral resin, polymethyl acid amide, polyethers change The mixture that property organosilicon, polyamide wax are formed, N-Methyl pyrrolidone, polyvinyl butyral resin, poly-first in organic carrier Base acrylic amine, organic silicon modified by polyether, the weight portion of five kinds of materials of polyamide wax be followed successively by 75%, 22%, 1%, 1%, 1%.

By above-mentioned material proportion, the PTC thermistor slurry of the present embodiment six has following performance parameter, particularly as follows: Viscosity 100Pa s/RPM, thickness 12 μm, sheet resistance 140 ± 2m Ω/, sheet resistance reheating rate of change ＜ 5%, temperature-coefficient of electrical resistance 3500±100×10^-6/ DEG C, tensile strength ＞ 16 (N/mm²)；So, the PTC thermistor slurry of the present embodiment six have with Lower advantage, particularly as follows: sheet resistance is high and adjustable, temperature-coefficient of electrical resistance is high and adjustable, printing characteristic and burn till characteristic good and can Match with insulating stainless steel substrate.

Wherein, the PTC thermistor slurry based on stainless steel substrate of the present embodiment six can use following preparation method It is prepared from, concrete, the preparation method of a kind of PTC thermistor slurry based on stainless steel substrate, include following technique Step:

A, prepare inorganic adhesive phase: by SiO₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Eu₂O₃、TiO₂In three-dimensional material mixer, mixing is all Even, SiO in mixture₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Eu₂O₃、TiO₂In the weight portion of seven kinds of materials be followed successively by 55%, 10%, 10%, 10%, 10%, 2.5%, 2.5%, then at smelting furnace melting after mix homogeneously, smelting temperature is 1400 DEG C, insulation Time is within 5 hours, i.e. to obtain glass melts, then glass melts is carried out shrend and obtains glass, finally with distilled water as medium To glass ball milling 6 hours, i.e. obtain the leadless crystallizing glass powder that particle size values is 3 μm-5 μm；

B, preparation complex function phase: first prepare linear positive temperature coefficient doping ruthenic acid copper powder, by ruthenic oxide, copper oxide and p Type semiconductor oxide CeO₂By certain part by weight through batch mixing, ball milling, dry, pulverize, sieve after, react under 1150 DEG C of high temperature 6h, utilizes solid phase synthesis by CeO₂It is incorporated into RuO₂Lattice in, prepare doping ruthenic acid copper powder body standby, and doping ruthenic acid Ruthenic oxide, copper oxide, CeO in copper powder₂The weight portion of three kinds of materials is followed successively by 60%, 35%, 5%；By micro-silver powder, nanometer Argentum powder, doping ruthenic acid copper powder mix homogeneously are with preparation silver-doping copper powder compounded powder of ruthenic acid, micro-silver powder, nanometer silver in composite powder Powder, the weight portion of doping three kinds of materials of ruthenic acid copper powder are followed successively by 20%, 20%, 60%, and the particle size values of micro-silver powder is 1 μm-3 μ M, the particle size values of nanometer silver powder are 20nm-50nm, the particle size values of doping ruthenic acid copper powder is 1 μm-3 μm；

C, prepare organic carrier: by main solvent N-Methyl pyrrolidone, thickening agent polyvinyl butyral resin, polymethylacrylic acid Amine, organic silicon modified by polyether, polyamide wax dissolve to obtain organic carrier in 80 DEG C of water-baths, and contract by adjusting polyvinyl alcohol The content of butyraldehyde, so that the viscosity of organic carrier controls in the range of 200mPa s-300mPa s, wherein, in organic carrier N-Methyl pyrrolidone, polyvinyl butyral resin, polymethyl acid amide, organic silicon modified by polyether, five kinds of materials of polyamide wax Weight portion be followed successively by 75%, 22%, 1%, 1%, 1%；

Prepared by d, resistance slurry: be placed in dispersed with stirring in container, the most again by inorganic adhesive phase, complex function phase, organic carrier Carry out three-roll rolling, to obtain the range of viscosities resistance slurry for 100Pa s ± 20Pa s, wherein, inorganic in resistance slurry Bonding phase, complex function phase, the weight portion of three kinds of materials of organic carrier are followed successively by 12%, 68%, 20%.

Designed by above-mentioned processing step, this preparation method can effectively production prepare the present embodiment six based on stainless The PTC thermistor slurry of steel substrate.

Embodiment seven, a kind of PTC thermistor slurry based on stainless steel substrate, include the material of following weight portion, Particularly as follows:

Inorganic adhesive phase 15%

Complex function phase 70%

Organic carrier 15%；

Stainless steel substrate is stainless steel tube；

Inorganic adhesive is leadless crystallizing glass powder mutually, and leadless crystallizing glass powder is by SiO₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Eu₂O₃、 The mixture that ZnO is formed, inorganic adhesive middle SiO mutually₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Eu₂O₃, the weight of seven kinds of materials of ZnO Part is followed successively by 55%, 10%, 10%, 10%, 10%, 2.5%, 2.5%；

Complex function is mutually by the composite powder being made up of micro-silver powder, nanometer silver powder, doping ruthenic acid copper powder, the particle diameter of micro-silver powder Value be 1 μm-3 μm, the particle size values of nanometer silver powder be 20nm-50nm, the particle size values of doping ruthenic acid copper powder is 1 μm-3 μm, compound merit Middle micro-silver powder, nanometer silver powder, the weight portion of doping three kinds of materials of ruthenic acid copper powder can be followed successively by 5%, 5%, 90% mutually；

Organic carrier is main solvent Isosorbide-5-Nitrae-dioxane, thickening agent polyvinyl acetate, polymethyl acid amide, polyether-modified has The mixture that machine silicon, polyamide wax are formed, Isosorbide-5-Nitrae-dioxane, polyvinyl acetate, polymethylacrylic acid in organic carrier Amine, organic silicon modified by polyether, the weight portion of five kinds of materials of polyamide wax are followed successively by 75%, 22%, 1%, 1%, 1%.

By above-mentioned material proportion, the PTC thermistor slurry of the present embodiment seven has following performance parameter, particularly as follows: Viscosity 108Pa s/RPM, thickness 12 μm, sheet resistance 138 ± 2m Ω/, sheet resistance reheating rate of change ＜ 5%, temperature-coefficient of electrical resistance 3200±100×10^-6/ DEG C, tensile strength ＞ 16 (N/mm²)；So, the PTC thermistor slurry of the present embodiment seven have with Lower advantage, particularly as follows: sheet resistance is high and adjustable, temperature-coefficient of electrical resistance is high and adjustable, printing characteristic and burn till characteristic good and can Match with insulating stainless steel substrate.

Wherein, the PTC thermistor slurry based on stainless steel substrate of the present embodiment seven can use following preparation method It is prepared from, concrete, the preparation method of a kind of PTC thermistor slurry based on stainless steel substrate, include following technique Step:

A, prepare inorganic adhesive phase: by SiO₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Eu₂O₃, ZnO mixes all in three-dimensional material mixer Even, SiO in mixture₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Eu₂O₃, in ZnO the weight portion of seven kinds of materials be followed successively by 55%, 10%, 10%, 10%, 10%, 2.5%, 2.5%, then at smelting furnace melting after mix homogeneously, smelting temperature is 1400 DEG C, and temperature retention time is Within 5 hours, i.e. obtain glass melts, then glass melts carried out shrend and obtain glass, finally with distilled water for medium to glass Ball milling 6 hours, i.e. obtains the leadless crystallizing glass powder that particle size values is 3 μm-5 μm；

B, preparation complex function phase: first prepare linear positive temperature coefficient doping ruthenic acid copper powder, by ruthenic oxide, copper oxide and p Type semiconductor oxide Sm₂O₃By certain part by weight through batch mixing, ball milling, dry, pulverize, sieve after, anti-under 1100 DEG C of high temperature Answer 6h, utilize solid phase synthesis by Sm₂O₃It is incorporated into RuO₂Lattice in, prepare doping ruthenic acid copper powder body standby, and doping ruthenium Ruthenic oxide, copper oxide, Sm in acid copper powder₂O₃The weight portion of three kinds of materials is followed successively by 60%, 35%, 5%；By micro-silver powder, receive Rice argentum powder, doping ruthenic acid copper powder mix homogeneously are with preparation silver-doping copper powder compounded powder of ruthenic acid, micro-silver powder, nanometer in composite powder Argentum powder, the weight portion of doping three kinds of materials of ruthenic acid copper powder are followed successively by 5%, 5%, 90%, and the particle size values of micro-silver powder is 1 μm-3 μ M, the particle size values of nanometer silver powder are 20nm-50nm, the particle size values of doping ruthenic acid copper powder is 1 μm-3 μm；

C, prepare organic carrier: by main solvent DMF, thickening agent polyvinyl acetate, polymethylacrylic acid Amine, organic silicon modified by polyether, polyamide wax dissolve to obtain organic carrier in 80 DEG C of water-baths, and by adjusting polyvinyl acetate The content of ester, so that the viscosity of organic carrier controls in the range of 200mPa s-300mPa s, wherein, N in organic carrier, Dinethylformamide, polyvinyl acetate, polymethyl acid amide, organic silicon modified by polyether, polyamide wax five kinds of materials Weight portion is followed successively by 75%, 22%, 1%, 1%, 1%；

Prepared by d, resistance slurry: be placed in dispersed with stirring in container, the most again by inorganic adhesive phase, complex function phase, organic carrier Carry out three-roll rolling, to obtain the range of viscosities resistance slurry for 100Pa s ± 20Pa s, wherein, inorganic in resistance slurry Bonding phase, complex function phase, the weight portion of three kinds of materials of organic carrier are followed successively by 40%, 3%, 57%.

Designed by above-mentioned processing step, this preparation method can effectively production prepare the present embodiment seven based on stainless The PTC thermistor slurry of steel substrate.

Embodiment eight, a kind of PTC thermistor slurry based on stainless steel substrate, include the material of following weight portion, Particularly as follows:

Inorganic adhesive phase 12%

Complex function phase 60%

Organic carrier 28%；

Stainless steel substrate is corrosion resistant plate；

Inorganic adhesive is leadless crystallizing glass powder mutually, and leadless crystallizing glass powder is by SiO₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Eu₂O₃、 Fe₂O₃The mixture formed, inorganic adhesive middle SiO mutually₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Eu₂O₃、Fe₂O₃The weight of seven kinds of materials Amount part is followed successively by 55%, 10%, 10%, 10%, 10%, 2.5%, 2.5%；

Complex function is mutually by the composite powder being made up of micro-silver powder, nanometer silver powder, doping ruthenic acid copper powder, the particle diameter of micro-silver powder Value be 1 μm-3 μm, the particle size values of nanometer silver powder be 20nm-50nm, the particle size values of doping ruthenic acid copper powder is 1 μm-3 μm, compound merit Middle micro-silver powder, nanometer silver powder, the weight portion of doping three kinds of materials of ruthenic acid copper powder can be followed successively by 32%, 3%, 65% mutually；

Organic carrier is main solvent N-Methyl pyrrolidone, thickening agent polyvinyl acetate, polymethyl acid amide, polyether-modified The mixture that organosilicon, polyamide wax are formed, N-Methyl pyrrolidone, polyvinyl butyral resin, poly-methyl in organic carrier Acrylic amine, organic silicon modified by polyether, the weight portion of five kinds of materials of polyamide wax are followed successively by 70%, 25%, 2%, 2%, 1%.

By above-mentioned material proportion, the PTC thermistor slurry of the present embodiment eight has following performance parameter, particularly as follows: Viscosity 125Pa s/RPM, thickness 12 μm, sheet resistance 135 ± 2m Ω/, sheet resistance reheating rate of change ＜ 5%, temperature-coefficient of electrical resistance 2900±100×10^-6/ DEG C, tensile strength ＞ 16 (N/mm²)；So, the PTC thermistor slurry of the present embodiment eight have with Lower advantage, particularly as follows: sheet resistance is high and adjustable, temperature-coefficient of electrical resistance is high and adjustable, printing characteristic and burn till characteristic good and can Match with insulating stainless steel substrate.

Wherein, the PTC thermistor slurry based on stainless steel substrate of the present embodiment eight can use following preparation method It is prepared from, concrete, the preparation method of a kind of PTC thermistor slurry based on stainless steel substrate, include following technique Step:

A, prepare inorganic adhesive phase: by SiO₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Eu₂O₃、Fe₂O₃In three-dimensional material mixer, mixing is all Even, SiO in mixture₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Eu₂O₃、Fe₂O₃In the weight portion of seven kinds of materials be followed successively by 55%, 10%, 10%, 10%, 10%, 2.5%, 2.5%, then at smelting furnace melting after mix homogeneously, smelting temperature is 1400 DEG C, insulation Time is within 5 hours, i.e. to obtain glass melts, then glass melts is carried out shrend and obtains glass, finally with distilled water as medium To glass ball milling 6 hours, i.e. obtain the leadless crystallizing glass powder that particle size values is 3 μm-5 μm；

B, preparation complex function phase: first prepare linear positive temperature coefficient doping ruthenic acid copper powder, by ruthenic oxide, copper oxide and p Type semiconductor oxide Gd₂O₃By certain part by weight through batch mixing, ball milling, dry, pulverize, sieve after, react under 1100 DEG C of high temperature 6h, utilizes solid phase synthesis by Gd₂O₃It is incorporated into RuO₂Lattice in, prepare doping ruthenic acid copper powder body standby, and doping ruthenic acid Ruthenic oxide, copper oxide, Gd in copper powder₂O₃The weight portion of three kinds of materials is followed successively by 60%, 35%, 5%；By micro-silver powder, nanometer Argentum powder, doping ruthenic acid copper powder mix homogeneously are with preparation silver-doping copper powder compounded powder of ruthenic acid, micro-silver powder, nanometer silver in composite powder Powder, doping three kinds of materials of ruthenic acid copper powder weight portion be followed successively by 32%, 3%, 65%, the particle size values of micro-silver powder be 1 μm-3 μm, The particle size values of nanometer silver powder is 20nm-50nm, the particle size values of doping ruthenic acid copper powder is 1 μm-3 μm；

C, prepare organic carrier: by main solvent N-Methyl pyrrolidone, thickening agent polyvinyl acetate, polymethyl acid amide, Organic silicon modified by polyether, polyamide wax dissolve to obtain organic carrier in 80 DEG C of water-baths, and by adjusting polyvinyl acetate Content so that the viscosity of organic carrier controls in the range of 200mPa s-300mPa s, wherein, N-first in organic carrier Base ketopyrrolidine, polyvinyl acetate, polymethyl acid amide, organic silicon modified by polyether, the weight of five kinds of materials of polyamide wax Part is followed successively by 70%, 25%, 2%, 2%, 1%；

Prepared by d, resistance slurry: be placed in dispersed with stirring in container, the most again by inorganic adhesive phase, complex function phase, organic carrier Carry out three-roll rolling, to obtain the range of viscosities resistance slurry for 100Pa s ± 20Pa s, wherein, inorganic in resistance slurry Bonding phase, complex function phase, the weight portion of three kinds of materials of organic carrier are followed successively by 12%, 60%, 28%.

Designed by above-mentioned processing step, this preparation method can effectively production prepare the present embodiment eight based on stainless steel-based The PTC thermistor slurry of material.

Embodiment nine, a kind of PTC thermistor slurry based on stainless steel substrate, include the material of following weight portion, Particularly as follows:

Inorganic adhesive phase 15%

Complex function phase 69%

Organic carrier 16%；

Stainless steel substrate is stainless steel tube；

Inorganic adhesive is leadless crystallizing glass powder mutually, and leadless crystallizing glass powder is by SiO₂、MgO、B₂O₃、Al₂O₃、Bi₂O₃、Eu₂O₃、 The mixture that ZnO is formed, inorganic adhesive middle SiO mutually₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Eu₂O₃, the weight of seven kinds of materials of ZnO Part is followed successively by 55%, 10%, 10%, 10%, 10%, 2.5%, 2.5%；

Complex function is mutually by the composite powder being made up of micro-silver powder, nanometer silver powder, doping ruthenic acid copper powder, the particle diameter of micro-silver powder Value be 1 μm-3 μm, the particle size values of nanometer silver powder be 20nm-50nm, the particle size values of doping ruthenic acid copper powder is 1 μm-3 μm, compound merit Middle micro-silver powder, nanometer silver powder, the weight portion of doping three kinds of materials of ruthenic acid copper powder can be followed successively by 35%, 5%, 60% mutually；

Organic carrier be N,N-dimethylacetamide, polyvinyl butyral resin, polymethyl acid amide, organic silicon modified by polyether, The mixture that polyamide wax is formed, N,N-dimethylacetamide, polyvinyl butyral resin, polymethylacrylic acid in organic carrier Amine, organic silicon modified by polyether, the weight portion of five kinds of materials of polyamide wax are followed successively by 75%, 22%, 1%, 1%, 1%.

By above-mentioned material proportion, the PTC thermistor slurry of the present embodiment nine has following performance parameter, particularly as follows: Viscosity 120Pa s/RPM, thickness 12 μm, sheet resistance 110 ± 2m Ω/, sheet resistance reheating rate of change ＜ 5%, temperature-coefficient of electrical resistance 1800±100×10^-6/ DEG C, tensile strength ＞ 16 (N/mm²)；So, the PTC thermistor slurry of the present embodiment nine have with Lower advantage, particularly as follows: sheet resistance is high and adjustable, temperature-coefficient of electrical resistance is high and adjustable, printing characteristic and burn till characteristic good and can Match with insulating stainless steel substrate.

Wherein, the PTC thermistor slurry based on stainless steel substrate of the present embodiment nine can use following preparation method It is prepared from, concrete, the preparation method of a kind of PTC thermistor slurry based on stainless steel substrate, include following technique Step, particularly as follows:

A, prepare inorganic adhesive phase: by SiO₂、MgO、B₂O₃、Al₂O₃、Bi₂O₃、Eu₂O₃, ZnO mixes all in three-dimensional material mixer Even, SiO in mixture₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Eu₂O₃, in ZnO the weight portion of seven kinds of materials be followed successively by 55%, 10%, 10%, 10%, 10%, 2.5%, 2.5%, then at smelting furnace melting after mix homogeneously, smelting temperature is 1400 DEG C, and temperature retention time is Within 5 hours, i.e. obtain glass melts, then glass melts carried out shrend and obtain glass, finally with distilled water for medium to glass Ball milling 6 hours, i.e. obtains the leadless crystallizing glass powder that particle size values is 3 μm-5 μm；

B, preparation complex function phase: first prepare linear positive temperature coefficient doping ruthenic acid copper powder, by ruthenic oxide, copper oxide and p Type semiconductor oxide Nd₂O₃By certain part by weight through batch mixing, ball milling, dry, pulverize, sieve after, react under 1200 DEG C of high temperature 6h, utilizes solid phase synthesis by Nd₂O₃It is incorporated into RuO₂Lattice in, prepare doping ruthenic acid copper powder body standby, and doping ruthenic acid Ruthenic oxide, copper oxide, Nd in copper powder₂O₃The weight portion of three kinds of materials is followed successively by 60%, 35%, 5%；By micro-silver powder, nanometer Argentum powder, doping ruthenic acid copper powder mix homogeneously are with preparation silver-doping copper powder compounded powder of ruthenic acid, micro-silver powder, nanometer silver in composite powder Powder, doping three kinds of materials of ruthenic acid copper powder weight portion be followed successively by 35%, 5%, 60%, the particle size values of micro-silver powder be 1 μm-3 μm, The particle size values of nanometer silver powder is 20nm-50nm, the particle size values of doping ruthenic acid copper powder is 1 μm-3 μm；

C, prepare organic carrier: by main solvent N,N-dimethylacetamide, thickening agent polyvinyl butyral resin, polymethylacrylic acid Amine, organic silicon modified by polyether, polyamide wax dissolve to obtain organic carrier in 80 DEG C of water-baths, and contract by adjusting polyvinyl alcohol The content of butyraldehyde, so that the viscosity of organic carrier controls in the range of 200mPa s-300mPa s, wherein, in organic carrier N,N-dimethylacetamide, polyvinyl butyral resin, polymethyl acid amide, organic silicon modified by polyether, five kinds of things of polyamide wax The weight portion of material is followed successively by 75%, 22%, 1%, 1%, 1%；

Prepared by d, resistance slurry: be placed in dispersed with stirring in container, the most again by inorganic adhesive phase, complex function phase, organic carrier Carry out three-roll rolling, to obtain the range of viscosities resistance slurry for 100Pa s ± 20Pa s, wherein, inorganic in resistance slurry Bonding phase, complex function phase, the weight portion of three kinds of materials of organic carrier are followed successively by 15%, 69%, 16%.

Designed by above-mentioned processing step, this preparation method can effectively production prepare the present embodiment nine based on stainless The PTC thermistor slurry of steel substrate.

Embodiment ten, a kind of PTC thermistor slurry based on stainless steel substrate, include the material of following weight portion, Particularly as follows:

Inorganic adhesive phase 10%

Complex function phase 72%

Organic carrier 18%；

Stainless steel substrate is corrosion resistant plate；

Inorganic adhesive is leadless crystallizing glass powder mutually, and leadless crystallizing glass powder is by SiO₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Eu₂O₃、 MoO₃The mixture formed, inorganic adhesive middle SiO mutually₂、MgO、B₂O₃、Al₂O₃、Bi₂O₃、Eu₂O₃、 MoO₃The weight of seven kinds of materials Amount part is followed successively by 55%, 10%, 10%, 10%, 10%, 2.5%, 2.5%；

Organic carrier is that main solvent N-Methyl pyrrolidone, thickening agent polyvinyl acetal, polymethyl acid amide, polyethers change The mixture that property organosilicon, polyamide wax are formed, N-Methyl pyrrolidone, polyvinyl acetal, poly-first in organic carrier Base acrylic amine, organic silicon modified by polyether, the weight portion of five kinds of materials of polyamide wax be followed successively by 75%, 22%, 1%, 1%, 1%.

By above-mentioned material proportion, the PTC thermistor slurry of the present embodiment ten has following performance parameter, particularly as follows: Viscosity 110Pa s/RPM, thickness 12 μm, sheet resistance 120 ± 2m Ω/, sheet resistance reheating rate of change ＜ 5%, temperature-coefficient of electrical resistance 2800±100×10^-6/ DEG C, tensile strength ＞ 16 (N/mm²)；So, the PTC thermistor slurry of the present embodiment ten have with Lower advantage, particularly as follows: sheet resistance is high and adjustable, temperature-coefficient of electrical resistance is high and adjustable, printing characteristic and burn till characteristic good and can Match with insulating stainless steel substrate.

Wherein, the PTC thermistor slurry based on stainless steel substrate of the present embodiment ten can use following preparation method It is prepared from, concrete, the preparation method of a kind of PTC thermistor slurry based on stainless steel substrate, include following technique Step:

A, prepare inorganic adhesive phase: by SiO₂、MgO、B₂O₃、Al₂O₃、Bi₂O₃、Eu₂O₃、MoO₃In three-dimensional material mixer, mixing is all Even, SiO in mixture₂、MgO、B₂O₃、Al₂O₃、Bi₂O₃、Eu₂O₃、MoO₃In the weight portion of seven kinds of materials be followed successively by 55%, 10%, 10%, 10%, 10%, 2.5%, 2.5%, then at smelting furnace melting after mix homogeneously, smelting temperature is 1400 DEG C, insulation Time is within 5 hours, i.e. to obtain glass melts, then glass melts is carried out shrend and obtains glass, finally with distilled water as medium To glass ball milling 6 hours, i.e. obtain the leadless crystallizing glass powder that particle size values is 3 μm-5 μm；

B, preparation complex function phase: first prepare linear positive temperature coefficient doping ruthenic acid copper powder, by ruthenic oxide, copper oxide and p Type semiconductor oxide Dy₂O₃By certain part by weight through batch mixing, ball milling, dry, pulverize, sieve after, react under 1000 DEG C of high temperature 6h, utilizes solid phase synthesis by Dy₂O₃It is incorporated into RuO₂Lattice in, prepare doping ruthenic acid copper powder body standby, and doping ruthenic acid Ruthenic oxide, copper oxide, Dy in copper powder₂O₃The weight portion of three kinds of materials is followed successively by 60%, 35%, 5%；By micro-silver powder, nanometer Argentum powder, doping ruthenic acid copper powder mix homogeneously are with preparation silver-doping copper powder compounded powder of ruthenic acid, micro-silver powder, nanometer silver in composite powder Powder, doping three kinds of materials of ruthenic acid copper powder weight portion be followed successively by 35%, 5%, 60%, the particle size values of micro-silver powder be 1 μm-3 μm, The particle size values of nanometer silver powder is 20nm-50nm, the particle size values of doping ruthenic acid copper powder is 1 μm-3 μm；

C, prepare organic carrier: by main solvent N-Methyl pyrrolidone, thickening agent polyvinyl acetal, polymethylacrylic acid Amine, organic silicon modified by polyether, polyamide wax dissolve to obtain organic carrier in 80 DEG C of water-baths, and contract by adjusting polyvinyl alcohol The content of butyraldehyde, so that the viscosity of organic carrier controls in the range of 200mPa s-300mPa s, wherein, in organic carrier N-Methyl pyrrolidone, polyvinyl acetal, polymethyl acid amide, organic silicon modified by polyether, five kinds of materials of polyamide wax Weight portion be followed successively by 75%, 22%, 1%, 1%, 1%；

Prepared by d, resistance slurry: be placed in dispersed with stirring in container, the most again by inorganic adhesive phase, complex function phase, organic carrier Carry out three-roll rolling, to obtain the range of viscosities resistance slurry for 100Pa s ± 20Pa s, wherein, inorganic in resistance slurry Bonding phase, complex function phase, the weight portion of three kinds of materials of organic carrier are followed successively by 10%, 72%, 18%.

Designed by above-mentioned processing step, this preparation method can effectively production prepare the present embodiment ten based on stainless The PTC thermistor slurry of steel substrate.

Embodiment 11, a kind of PTC thermistor slurry based on stainless steel substrate, include the thing of following weight portion Material, particularly as follows:

Inorganic adhesive phase 12%

Complex function phase 68%

Organic carrier 20%；

Stainless steel substrate is stainless steel tube；

Inorganic adhesive is leadless crystallizing glass powder mutually, and leadless crystallizing glass powder is by SiO₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Eu₂O₃、 CaF₂The mixture formed, inorganic adhesive middle SiO mutually₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、Eu₂O₃、CaF₂The weight of seven kinds of materials Part is followed successively by 50%, 12.5%, 12.5%, 10%, 10%, 2.5%, 2.5%；

Complex function is mutually by the composite powder being made up of micro-silver powder, nanometer silver powder, doping ruthenic acid copper powder, the particle diameter of micro-silver powder Value be 1 μm-3 μm, the particle size values of nanometer silver powder be 20nm-50nm, the particle size values of doping ruthenic acid copper powder is 1 μm-3 μm, compound merit Middle micro-silver powder, nanometer silver powder, the weight portion of doping three kinds of materials of ruthenic acid copper powder can be followed successively by 25%, 15%, 60% mutually；

Organic carrier is main solvent Isosorbide-5-Nitrae-dioxane, thickening agent polyvinyl acetal, polymethyl acid amide, polyether-modified The mixture that organosilicon, polyamide wax are formed, Isosorbide-5-Nitrae-dioxane, polyvinyl acetal, poly-methyl-prop in organic carrier Olefin(e) acid amine, organic silicon modified by polyether, the weight portion of five kinds of materials of polyamide wax are followed successively by 70%, 25%, 2%, 2%, 1%.

By above-mentioned material proportion, the PTC thermistor slurry of the present embodiment 11 has following performance parameter, specifically For: viscosity 105Pa s/RPM, thickness 12 μm, sheet resistance 130 ± 2m Ω/, sheet resistance reheating rate of change ＜ 5%, resistance temperature system Several 3300 ± 100 × 10^-6/ DEG C, tensile strength ＞ 16 (N/mm²)；So, the PTC thermistor slurry tool of the present embodiment 11 Have the advantage that, particularly as follows: sheet resistance is high and adjustable, temperature-coefficient of electrical resistance is high and adjustable, printing characteristic and burn till characteristic good and Can match with insulating stainless steel substrate.

Wherein, the PTC thermistor slurry based on stainless steel substrate of the present embodiment 11 can use the following side of preparation Method is prepared from, concrete, the preparation method of a kind of PTC thermistor slurry based on stainless steel substrate, includes following work Skill step:

A, prepare inorganic adhesive phase: by SiO₂、MgO、B₂O₃、Al₂O₃、Bi₂O₃、Eu₂O₃、CaF₂In three-dimensional material mixer, mixing is all Even, SiO in mixture₂、MgO、B₂O₃、Al₂O₃、Bi₂O₃、Eu₂O₃、CaF₂In the weight portion of seven kinds of materials be followed successively by 50%, 12.5%, 12.5%, 10%, 10%, 2.5%, 2.5%, then at smelting furnace melting after mix homogeneously, smelting temperature is 1400 DEG C, Temperature retention time is within 5 hours, i.e. to obtain glass melts, then glass melts is carried out shrend and obtains glass, with distilled water being finally Medium, to glass ball milling 6 hours, i.e. obtains the leadless crystallizing glass powder that particle size values is 3 μm-5 μm；

B, preparation complex function phase: first prepare linear positive temperature coefficient doping ruthenic acid copper powder, by ruthenic oxide, copper oxide and p Type semiconductor oxide Eu₂O₃By certain part by weight through batch mixing, ball milling, dry, pulverize, sieve after, react under 1200 DEG C of high temperature 6h, utilizes solid phase synthesis by Eu₂O₃It is incorporated into RuO₂Lattice in, prepare doping ruthenic acid copper powder body standby, and doping ruthenic acid Ruthenic oxide, copper oxide, Eu in copper powder₂O₃The weight portion of three kinds of materials is followed successively by 60%, 35%, 5%；By micro-silver powder, nanometer Argentum powder, doping ruthenic acid copper powder mix homogeneously are with preparation silver-doping copper powder compounded powder of ruthenic acid, micro-silver powder, nanometer silver in composite powder Powder, the weight portion of doping three kinds of materials of ruthenic acid copper powder are followed successively by 25%, 15%, 60%, and the particle size values of micro-silver powder is 1 μm-3 μ M, the particle size values of nanometer silver powder are 20nm-50nm, the particle size values of doping ruthenic acid copper powder is 1 μm-3 μm；

C, prepare organic carrier: by main solvent Isosorbide-5-Nitrae-dioxane, thickening agent polyvinyl acetal, polymethyl acid amide, Organic silicon modified by polyether, polyamide wax dissolve to obtain organic carrier in 80 DEG C of water-baths, and by adjusting polyvinyl alcohol contracting fourth The content of aldehyde, so that the viscosity of organic carrier controls in the range of 200mPa s-300mPa s, wherein, in organic carrier 1, 4-dioxane, polyvinyl acetal, polymethyl acid amide, organic silicon modified by polyether, the weight of five kinds of materials of polyamide wax Amount part is followed successively by 70%, 25%, 2%, 2%, 1%；

Designed by above-mentioned processing step, this preparation method can effectively production prepare the present embodiment 11 based on not The PTC thermistor slurry of rust steel substrate.

Above content is only presently preferred embodiments of the present invention, for those of ordinary skill in the art, according to the present invention's Thought, the most all will change, and this specification content should not be construed as the present invention Restriction.

Claims

1. a PTC thermistor slurry based on stainless steel substrate, stainless steel substrate is stainless steel tube or corrosion resistant plate, its Being characterised by, this PTC thermistor slurry includes the material of following weight portion, particularly as follows:

Inorganic adhesive phase 10-20%

Complex function phase 50%-70%

Organic carrier 10%-40%；

Wherein, inorganic adhesive is leadless crystallizing glass powder mutually, and leadless crystallizing glass powder is by SiO₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃、 The mixture that rare earth oxide, Nucleating Agent are formed, inorganic adhesive middle SiO mutually₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃, rare-earth oxidation Thing, the weight portion of seven kinds of materials of Nucleating Agent be followed successively by 20%-70%, 10%-50%, 1%-15%, 5%-30%, 10%-30%, 1%-10%, 1%-10%；

Complex function is mutually by the composite powder being made up of micro-silver powder, nanometer silver powder, doping ruthenic acid copper powder, the particle diameter of micro-silver powder Value is 1 m-3 m, and the particle size values of nanometer silver powder is 20nm-50nm, and the particle size values of doping ruthenic acid copper powder is 1 m-3 m, compound merit Middle micro-silver powder, nanometer silver powder, the weight portion of doping three kinds of materials of ruthenic acid copper powder can be followed successively by 5%-50%, 5%-20%, 30%-mutually 90%；

Organic carrier is the mixture being made up of organic solvent, macromolecule thickener, dispersant, defoamer, thixotropic agent, organic In carrier, organic solvent, macromolecule thickener, dispersant, defoamer, the weight portion of five kinds of materials of thixotropic agent are followed successively by 70%- 80%、15%-20%、1%-5%、1%-5%、1%-5%。

A kind of PTC thermistor slurry based on stainless steel substrate the most according to claim 1, it is characterised in that: described Doping ruthenic acid copper powder is doped by the solid phase synthesis of ruthenic oxide, copper oxide and p-type semiconductor oxide, by two Ruthenium-oxide, copper oxide and p-type semiconductor oxide by certain part by weight through batch mixing, ball milling, dry, pulverize, sieve after, Under 900 DEG C of-1200 DEG C of high temperature, prepare doping ruthenic acid copper powder body, titanium dioxide in doping ruthenic acid copper powder through solid phase synthesis Ruthenium, copper oxide, the weight portion of three kinds of materials of p-type semiconductor oxide are followed successively by 58%-75%, 15%-41.5%, 0.5%-10%.

A kind of PTC thermistor slurry based on stainless steel substrate the most according to claim 2, it is characterised in that: described p Type semiconductor oxide is Nb₂O₅、Bi₂O₃、Cu₂O、Y₂O₃、La₂O₃、CeO₂、Sm₂O₃、Gd₂O₃、Nd₂O₃、Dy₂O₃、Eu₂O₃In one The mixture that kind or at least two are formed.

A kind of PTC thermistor slurry based on stainless steel substrate the most according to claim 3, it is characterised in that: described Rare earth oxide is CeO₂、Sm₂O₃、Gd₂O₃、Nd₂O₃、Dy₂O₃、Eu₂O₃In the mixture that formed of a kind of or at least two.

A kind of PTC thermistor slurry based on stainless steel substrate the most according to claim 4, it is characterised in that: described Nucleating Agent is TiO₂、ZrO₂、MoO₃、Fe₂O₃、CaF₂、P₂O₅, the mixture that formed of a kind of or at least two in ZnO.

A kind of PTC thermistor slurry based on stainless steel substrate the most according to claim 5, it is characterised in that: described Organic solvent is terpineol, butyl carbitol, butyl carbitol acetate, tributyl citrate, GBL, Isosorbide-5-Nitrae-dioxy Six rings, mixed dibasic acid ester, N-Methyl pyrrolidone, DMF, N,N-dimethylacetamide, dimethyl sulfoxide, It is mixed that a kind of or at least two in dimethyl adipate, diethylene adipate, glycol dimethyl ether monoacetate is formed Compound.

A kind of PTC thermistor slurry based on stainless steel substrate the most according to claim 6, it is characterised in that: described Macromolecule thickener is ethyl cellulose, hydroxyethyl cellulose, polyvinyl alcohol, polyvinyl acetate, polyvinyl acetal, gathers The mixture that a kind of or at least two in vinyl butyral, polyvinylpyrrolidone, polyacrylamide is formed.

A kind of PTC thermistor slurry based on stainless steel substrate the most according to claim 7, it is characterised in that: described Dispersant is the one in triammonium citrate, polymethyl acid amide, 1,4-dihydroxy sulfanilic acid or at least two institute group The mixture become.

A kind of PTC thermistor slurry based on stainless steel substrate the most according to claim 8, it is characterised in that: described Defoamer is the one in polydimethylsiloxane, organic silicon modified by polyether, and described thixotropic agent is castor oil hydrogenated, polyamide wax In one.

10. the preparation method of a PTC thermistor slurry based on stainless steel substrate, it is characterised in that include following work Skill step, particularly as follows:

A, prepare inorganic adhesive phase: by SiO₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃, rare earth oxide, Nucleating Agent is in three-dimensional material mixer Mix homogeneously, SiO in mixture₂、MgO、B₂O₃、A1₂O₃、Bi₂O₃, rare earth oxide, the weight portion of seven kinds of materials in Nucleating Agent It is followed successively by 20%-70%, 10%-50%, 1%-15%, 5%-30%, 10%-30%, 1%-10%, 1%-10%, then at smelting furnace after mix homogeneously Melting, smelting temperature is 1100 DEG C-1500 DEG C, and temperature retention time is i.e. to obtain glass melts, then by glass melts in 3-6 hour Carrying out shrend and obtain glass, finally with distilled water for medium to glass ball milling 4-6 hour, i.e. obtaining particle size values is 3 μm-5 μm Leadless crystallizing glass powder；

B, preparation complex function phase: by micro-silver powder, nanometer silver powder, doping ruthenic acid copper powder mix homogeneously with preparation silver-doping ruthenium The copper powder compounded powder of acid, in composite powder, micro-silver powder, nanometer silver powder, the weight portion of doping three kinds of materials of ruthenic acid copper powder are followed successively by 5%- 50%, 5%-20%, 30%-90%, the particle size values of micro-silver powder is 1 m-3 m, the particle size values of nanometer silver powder is 20nm-50nm, doping The particle size values of ruthenic acid copper powder is 1 m-3 m；

C, prepare organic carrier: by organic solvent, macromolecule thickener, dispersant, defoamer, thixotropic agent are molten in 80 DEG C of water-baths Solution to obtain organic carrier, and by adjust macromolecule thickener content so that the viscosity of organic carrier controls 200 In the range of mPa s-300 mPa s, wherein, organic solvent in organic carrier, macromolecule thickener, dispersant, defoamer, The weight portion of five kinds of materials of thixotropic agent is followed successively by 70%-80%, 15%-20%, 1%-5%, 1%-5%, 1%-5%；

Prepared by d, resistance slurry: by inorganic adhesive phase, complex function phase, organic carrier dispersed with stirring in container, enter the most again Row three-roll rolling, to obtain the PTC resistor slurry that range of viscosities is 100 Pa s ± 20 Pa s, wherein, PTC resistor slurry Middle inorganic adhesive phase, complex function phase, the weight portion of three kinds of materials of organic carrier are followed successively by 10%-20%, 50%-70%, 10%- 40%。