CN106066215B - A kind of sapphire pyrostat - Google Patents
A kind of sapphire pyrostat Download PDFInfo
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- CN106066215B CN106066215B CN201610613437.1A CN201610613437A CN106066215B CN 106066215 B CN106066215 B CN 106066215B CN 201610613437 A CN201610613437 A CN 201610613437A CN 106066215 B CN106066215 B CN 106066215B
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- sapphire
- high temperature
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/32—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in transmittance, scattering or luminescence in optical fibres
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Abstract
The invention discloses a kind of sapphire pyrostats, including sapphire fiber and sapphire wafer, the incidence end of sapphire fiber is fixedly connected with multimode fibre, and reflection end is connected with sapphire wafer, and the junction of sapphire fiber and sapphire wafer is provided with oblique angle；It is set with high temperature resistant lock pin outside the reflection end of sapphire fiber, high temperature resistant sleeve is set with outside high temperature resistant lock pin, heat-resisting material is that materials, the one end of high temperature resistant sleeve such as ceramics, sapphire or corundum are fixedly connected with sapphire wafer.The present invention can calibrate sapphire fiber, moreover it is possible to be tightly fastened to sapphire fiber and sapphire wafer, effectively prevent the end that high-temp glue penetrates into sapphire fiber；And can prevent from interfering between fiber end face and sapphire wafer, improve the quality of interference spectrum.
Description
Technical field
The present invention relates to fiber optic sensor technology field more particularly to a kind of sapphire pyrostats.
Background technique
The Yizheng Zhu in Virginia, US Polytechnics photoelectron research center was proposed in 2005 and has been made one
Method amber pyrostat of the kind based on sapphire wafer.
The sensor of the structure production when because capillary phenomenon there are high-temp glues to be easily penetrated into sapphire fiber
End, pollute optic fibre end and sapphire wafer, the quality of such interference spectrum can degradation, cause to be fabricated to power very
It is low.This, which is mainly aimed at, improves this technical problem.The sensor uses the sapphire fiber of 0 ° of angle end face, such optical fiber
It is in parallel relation between end face and sapphire wafer, is easy to happen interference, influences the quality of chip interference signal itself.
Summary of the invention
The technical problem to be solved in the present invention is that easily infiltrating into sapphire fiber, and 0 ° for high-temp glue in the prior art
The sapphire fiber of angle end face is easy to happen the defect of interference, provides a kind of new fixed structure, and sapphire fiber end face is arranged
The sapphire pyrostat at oblique angle.
The technical solution adopted by the present invention to solve the technical problems is:
The present invention provides a kind of sapphire pyrostat, including sapphire fiber and sapphire wafer, sapphire fiber
Incidence end be fixedly connected with multimode fibre, reflection end is connected with sapphire wafer, the company of sapphire fiber and sapphire wafer
The place of connecing is provided with oblique angle；
It is set with high temperature resistant lock pin outside the reflection end of sapphire fiber, is set with high temperature resistant sleeve outside high temperature resistant lock pin, it is resistance to
One end of high temperature sleeves is fixedly connected with sapphire wafer.
Further, the angle at the oblique angle between sapphire fiber reflection end and sapphire wafer of the invention be 3 °-
10°。
Further, the angle at the oblique angle between sapphire fiber reflection end and sapphire wafer of the invention is 5 °, is led to
It crosses and the end face of sapphire fiber reflection end is ground, form 5 ° of oblique angle.
Further, pass through high-temp glue adhesion, high temperature resistant lock pin between sapphire fiber of the invention and high temperature resistant lock pin
By high-temp glue adhesion between high temperature resistant sleeve, pass through high-temp glue adhesion between high temperature resistant sleeve and sapphire wafer.
Further, the length of high temperature resistant lock pin of the invention is greater than the length of high temperature resistant sleeve.
Further, gap is provided between high temperature resistant lock pin and sapphire wafer of the invention.
Further, multimode fibre of the invention is fixed with sapphire fiber by the means of welding.
Further, high temperature resistant lock pin of the invention and high temperature resistant sleeve are ceramics, sapphire or corundum material.
The beneficial effect comprise that: sapphire pyrostat of the invention passes through high temperature resistant lock pin and Nai Gao
The structure of warm sleeve designs, and can calibrate sapphire fiber, moreover it is possible to sapphire fiber and sapphire wafer are tightly fastened,
High temperature resistant insertion core end face and sapphire wafer are separated, capillary phenomenon is avoided, high-temp glue is effectively prevented and penetrates into sapphire
The end of optical fiber；By the oblique angle structure designed in sapphire fiber end face, can prevent fiber end face and sapphire wafer it
Between interfere, improve the quality of interference spectrum, improve the operation success rate of sensor probe.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples, in attached drawing:
Fig. 1 is the structural schematic diagram of the sapphire pyrostat of the embodiment of the present invention；
Fig. 2 is the angular light line reflection schematic diagram of the sapphire pyrostat of the embodiment of the present invention；
In figure, 1- sapphire fiber, 2- sapphire wafer, 3- high temperature resistant lock pin, 4- high temperature resistant sleeve, 5- high-temp glue, 6-
Multimode fibre, the gap 7-.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, not
For limiting the present invention.
As shown in Figure 1, the sapphire pyrostat of the embodiment of the present invention, including sapphire fiber 1 and sapphire wafer
2, the incidence end of sapphire fiber 1 is fixedly connected with multimode fibre 6, and reflection end is connected with sapphire wafer 2, sapphire fiber 1
The junction of sapphire wafer 2 is provided with oblique angle；
It is set with high temperature resistant lock pin 3 outside the reflection end of sapphire fiber 1, high temperature resistant sleeve is set with outside high temperature resistant lock pin 3
4, one end of high temperature resistant sleeve 4 is fixedly connected with sapphire wafer 2.
As shown in Fig. 2, improving the quality of crystal plate interference spectrum in order to avoid interfering between optical fiber and chip, use
The sapphire fiber of oblique 5 ° of ends.Other gradients also can be used, but the too small effect of angle is unobvious, and angle is too big can shadow
The intensity of reflectance spectrum is rung, the most suitable angular range in oblique angle between 1 reflection end of sapphire fiber and sapphire wafer 2 is
3°-10°。
Pass through 5 adhesion of high-temp glue, high temperature resistant lock pin 3 and high temperature resistant sleeve 4 between sapphire fiber 1 and high temperature resistant lock pin 3
Between by 5 adhesion of high-temp glue, pass through 5 adhesion of high-temp glue between high temperature resistant sleeve 4 and sapphire wafer 2.High temperature resistant lock pin 3
Length is greater than the length of high temperature resistant sleeve 4.Gap is provided between high temperature resistant lock pin 3 and sapphire wafer 2.Multimode fibre 6 with
Sapphire fiber 1 is fixed by the means of welding.
In another embodiment of the present invention, sensor structure includes multimode fibre, sapphire fiber, sapphire crystalline substance
Five piece, high temperature resistant lock pin and high temperature resistant casing parts.Wherein multimode fibre is welded together with sapphire fiber, and sapphire
The front end of optical fiber is contacted with sapphire wafer.Sapphire fiber and sapphire wafer use " high temperature resistant lock pin-high temperature resistant casing-
High-temp glue " structure is fixed together.The structure can both calibrate sapphire fiber, optical fiber and bonding wafer can also be fixed
Come.
It is reflected by the light that sapphire fiber transmits in output end face, by reaching sapphire wafer after air dielectric
(Fa-Po cavity).The end face of sapphire fiber is wherein designed to oblique 5 ° of angles, effectively to inhibit sapphire fiber end face and sapphire
Interference phenomenon between chip.After the reflection in former and later two faces of sapphire wafer, two different beam reflected lights of intensity are obtained,
This two-beam interferes, and obtains interference spectrum signal.The spectral signal is exported by sapphire fiber, multimode fibre to spectrum
Instrument.
The sensor specified for one, is presented one-to-one relationship between interference spectrum signal and temperature, by light
The demodulation of spectrum signal can be obtained by corresponding temperature value.
Because sensor needs 1800 DEG C of high temperature resistant, the heat-resisting materials such as ceramics, sapphire, corundum are used.If
High temperature resistant lock pin and high temperature resistant sleeve are integrated, a kind of long tail bone high temperature resistant lock pin is produced, can also play identical
Effect.This pyrostat may be implemented under the adverse circumstances of high temperature, high pressure, high corrosion, strong electromagnetic radiation to 20 DEG C -1800
The measurement of DEG C range temperature.
It should be understood that for those of ordinary skills, it can be modified or changed according to the above description,
And all these modifications and variations should all belong to the protection domain of appended claims of the present invention.
Claims (5)
1. a kind of sapphire pyrostat, which is characterized in that including sapphire fiber (1) and sapphire wafer (2), sapphire
The incidence end of optical fiber (1) is fixedly connected with multimode fibre (6), and reflection end is connected with sapphire wafer (2), sapphire fiber (1)
The junction of sapphire wafer (2) is provided with oblique angle；
It is set with high temperature resistant lock pin (3) outside the reflection end of sapphire fiber (1), high temperature resistant set is set with outside high temperature resistant lock pin (3)
Cylinder (4), one end of high temperature resistant sleeve (4) is fixedly connected with sapphire wafer (2)；
Pass through high-temp glue (5) adhesion, high temperature resistant lock pin (3) and high temperature resistant set between sapphire fiber (1) and high temperature resistant lock pin (3)
By high-temp glue (5) adhesion between cylinder (4), pass through high-temp glue (5) adhesion between high temperature resistant sleeve (4) and sapphire wafer (2)；
The length of high temperature resistant lock pin (3) is greater than the length of high temperature resistant sleeve (4)；
Gap (7) are provided between high temperature resistant lock pin (3) and sapphire wafer (2).
2. sapphire pyrostat according to claim 1, which is characterized in that sapphire fiber (1) reflection end and indigo plant
The angle at the oblique angle between jewel chip (2) is 3 ° -10 °.
3. sapphire pyrostat according to claim 2, which is characterized in that sapphire fiber (1) reflection end and indigo plant
The angle at the oblique angle between jewel chip (2) is 5 °, is ground by the end face to sapphire fiber (1) reflection end, is formed
5 ° of oblique angle.
4. sapphire pyrostat according to claim 1, which is characterized in that multimode fibre (6) and sapphire fiber
(1) it is fixed by the means of welding.
5. sapphire pyrostat according to claim 1, which is characterized in that high temperature resistant lock pin (3) and high temperature resistant set
Cylinder (4) is ceramics, sapphire or corundum material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610613437.1A CN106066215B (en) | 2016-07-29 | 2016-07-29 | A kind of sapphire pyrostat |
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| CN201610613437.1A CN106066215B (en) | 2016-07-29 | 2016-07-29 | A kind of sapphire pyrostat |
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| CN106066215A CN106066215A (en) | 2016-11-02 |
| CN106066215B true CN106066215B (en) | 2019-06-28 |
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| CN107860743A (en) * | 2017-10-20 | 2018-03-30 | 华东理工大学 | Utilize the method and its application of the model of reflective near infrared fibre-optical probe structure fast prediction oil property |
| CN108680276A (en) * | 2018-04-12 | 2018-10-19 | 哈尔滨工程大学 | One kind being based on Nd:The High-termperature Optical Fiber Sensor of YAG crystalline ceramics chips |
| CN109580035B (en) * | 2018-12-05 | 2020-08-18 | 天津大学 | Sapphire optical fiber high-temperature sensor with high fringe visibility and temperature measuring method thereof |
| CN110207732B (en) * | 2019-04-10 | 2024-06-18 | 武汉理工大学 | Ultrahigh-temperature sapphire optical fiber F-P temperature strain composite sensor |
| CN111982346B (en) * | 2019-05-24 | 2022-05-03 | 武汉理工大学 | High-sensitivity optical fiber temperature sensor |
| CN110220613A (en) * | 2019-06-24 | 2019-09-10 | 南京师范大学 | A kind of sapphire pipe blackbody chamber optical fiber temperature-measurement device |
| CN110501090B (en) * | 2019-08-12 | 2020-11-10 | 北京航空航天大学 | Sapphire wafer-boron nitride film-based optical fiber F-P high-temperature sensor, preparation method and temperature sensing device |
| CN110617901A (en) * | 2019-09-25 | 2019-12-27 | 北京航空航天大学 | Sapphire optical fiber F-P high-temperature sensor with inclined reflection surface, preparation method and temperature sensing system |
| CN110986819B (en) * | 2019-12-16 | 2021-04-06 | 西安工业大学 | Fabry-Perot cavity type optical fiber curvature sensing probe and manufacturing method thereof |
| CN113624362B (en) * | 2021-08-16 | 2024-06-07 | 哈尔滨工程大学 | Optical fiber Fabry-Perot interference high-temperature sensor based on silicon carbide microcavity |
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| US5381229A (en) * | 1991-03-29 | 1995-01-10 | Center For Innovative Technology | Sapphire optical fiber interferometer |
| US7762720B1 (en) * | 2006-08-08 | 2010-07-27 | Virginia Tech Intellectual Properties, Inc. | Fabrication of miniature fiber-optic temperature sensors |
| CN202141538U (en) * | 2011-07-15 | 2012-02-08 | 北京宏孚瑞达科技有限公司 | Fiber high temperature sensor protective sleeve |
| CN204479207U (en) * | 2015-02-15 | 2015-07-15 | 东台市丰泰特种管件有限公司 | Oil well high-temperature resistant optical fiber thermometric pipeline |
| CN105333974A (en) * | 2015-12-08 | 2016-02-17 | 中国航空工业集团公司北京长城计量测试技术研究所 | Double-screen air suction type sapphire optical fiber high temperature sensor |
| CN105547502A (en) * | 2016-02-19 | 2016-05-04 | 河北智康通信技术有限公司 | Ceramic sheath of fiber high temperature detector |
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| US7054011B2 (en) * | 2003-09-04 | 2006-05-30 | Virginia Tech Intellectual Properties, Inc. | Optical fiber pressure and acceleration sensor fabricated on a fiber endface |
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| US5381229A (en) * | 1991-03-29 | 1995-01-10 | Center For Innovative Technology | Sapphire optical fiber interferometer |
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