CN106027002B - A kind of nanosecond microwave narrow pulse modulator - Google Patents
A kind of nanosecond microwave narrow pulse modulator Download PDFInfo
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- CN106027002B CN106027002B CN201610325496.9A CN201610325496A CN106027002B CN 106027002 B CN106027002 B CN 106027002B CN 201610325496 A CN201610325496 A CN 201610325496A CN 106027002 B CN106027002 B CN 106027002B
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- 230000003750 conditioning effect Effects 0.000 claims abstract description 17
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 230000001360 synchronised effect Effects 0.000 claims description 4
- 210000001367 artery Anatomy 0.000 claims description 3
- 210000003462 vein Anatomy 0.000 claims description 3
- 230000002123 temporal effect Effects 0.000 claims description 2
- 238000001914 filtration Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
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- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005032 impulse control Effects 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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- 238000002360 preparation method Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K7/00—Modulating pulses with a continuously-variable modulating signal
- H03K7/08—Duration or width modulation ; Duty cycle modulation
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Abstract
The invention discloses a kind of nanosecond microwave narrow pulse signal modulators, belong to microwave signal source domain.It include: time domain impulse generation module, time domain impulse waveform conditioning module, microwave burst pulse generation module and microwave pulse waveform conditioning module;Modulated signal on-off ratio better than 80dB is ensured using microwave switch premodulated series connection very low frequencies mixing scheme;Nanosecond pulse adjustable pulse width is realized, highest repetition 25MHz, modulated signal on-off ratio are greater than 80dB, and instrument cost can be greatly lowered compared to purchase signal source certain pulses modulation option.
Description
Technical field
The invention belongs to microwave signal source domain, in particular to a kind of nanosecond microwave burst pulse modulation technique.
Background technique
Impulse modulation is a basic microwave signal source common function.For high-power microwave source, electromagnetic environmental effects
Fields, the general pulse modulation parameters (Microsecond grade pulsewidth) such as research are no longer satisfied application demand.In high power microwave effects
In experimental study, effect source is usually Amplifier type, to generate the output of specific waveforms parameter Narrow-band HPW, is needed big
The adjustable seed signal source of pulse parameter in range, most narrow spaces should be not more than 10ns;On the other hand, effect source gain is high, because
This requires pulse switch ratio to be greater than 70dB.A small number of commercial microwave signal sources can provide burst pulse modulation option (such as minimum pulsewidth
20ns, minimum period 70ns), but price is higher, and needs to purchase or upgrade mating built in the brand microwave signal generator make
With.Due to being built-in option, have the shortcomings that early stage instrument model is incompatible.
Summary of the invention
The present invention provides a kind of nanosecond microwave narrow pulse signal modulators, realize nanosecond pulse adjustable pulse width, most
Gao Zhongying 25MHz, modulated signal on-off ratio are greater than 80dB, can be greatly lowered compared to purchase signal source certain pulses modulation option
Instrument cost.
The present invention is as follows using technical solution:
A kind of nanosecond microwave narrow pulse modulator includes: time domain impulse generation module, time domain impulse waveform conditioning mould
Block, microwave burst pulse generation module and microwave pulse waveform conditioning module.The time domain of the time domain impulse generation module output
Pulse is divided into two-way time domain impulsive signals by 1:2 clock buffer, and time domain impulsive signals enter microwave by reverser all the way
Burst pulse generation module controls the Push And Release of microwave switch, to realize the continuous wave signal premodulated to input;Separately
Time domain impulsive signals pass through time domain impulse waveform conditioning module first all the way, reach suitable pulse amplitude level and with by micro-
The premodulated pulse signal that wave switchs is synchronous, then also enters microwave burst pulse generation module and the microwave in the module is pre-
Modulated pulse signal carries out mixed modulated, to generate initial microwave modulated narrow pulse signal;The signal passes through microwave pulse wave
Shape conditioning module exports final microwave modulated narrow pulse signal.
Wherein, the time domain impulse conditioning module includes time delay module, and the attenuation module of adjustment pulse amplitude level
With amplifier module.
The microwave pulse waveform conditioning module includes filter module and power amplifier module.
The time domain impulsive signals pulsewidth and cycle parameter that the time domain impulse generation module generates are adjustable, most narrow spaces
10ns, minimum period 40ns.
Further, the time domain impulse generation module using FPGA (Field-Programmable Gate Array,
Field Programmable Logic Array) or pulse signal generator (HP8114A) generation time domain impulsive signals.
Further, the time delay module passes through accurate adjustable delay chip and logic control circuit is completed, and different patrols
It collects code and corresponds to different delays, to guarantee that the output of microwave switch pre-modulated signal is synchronous with time domain impulsive signals mixing, thus
Obtain accurate width parameter control.
The attenuation module is pin network attenuator, and amplifier module includes high speed operation amplifier and its peripheral circuit, is led to
It crosses the accurate feedback resistance optimized and revised in amplifier module and obtains required time domain impulse amplitude electricity under frequency mixer optimum Working
It is flat.
The filter module uses the super wide band microstrip being made of fan-shaped minor matters, short-circuit minor matters, open circuit minor matters, high Low ESR
Bandpass filter realizes that temporal low frequency leakage is filtered with higher harmonic component is mixed in microwave pulse signal.Power amplifier module
Including wideband power amplifer chip and its peripheral circuit, modulated microwave narrow pulse signal Maximum Power Output is greater than
10dBm。
The beneficial effects of the present invention are:
(1) high performance-price ratio: external type micro-wave narrow pulse modulator is designed compared to purchase signal source complete machine or signal source upgrading
Burst pulse modulates the technical requirements that microwave signal source is greatly reduced in related option, and any one has continuous wave outputting standard signal
Generator can meet application demand.
(2) shutdown of modulated signal height is than index: the nanosecond microwave narrow pulse modulator burst pulse modulating part uses
Microwave switch premodulated series connection very low frequencies mixing scheme ensures the modulated signal on-off ratio better than 80dB;
(3) modulator is small in size, structure type is independent, flexible in application, and function has more targetedly feature.Using being based on
FPGA or pulse signal generator time domain impulse generate cooperation using microwave switch and frequency mixer as the burst pulse modulation technique of core
The output of nanosecond microwave burst pulse is realized, built-in Microwave Power Module to export microwave pulse power greater than 10dBm.
Detailed description of the invention
Fig. 1 is nanosecond microwave narrow pulse modulator module flow diagram.
Fig. 2 is the specific block diagram of nanosecond microwave narrow pulse modulator scheme.
Fig. 3 is microwave switch premodulated series connection very low frequencies mixing scheme effect picture.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments, is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
It include time domain arteries and veins as shown in Figure 1, providing a kind of nanosecond microwave narrow pulse modulator module flow diagram for the present invention
Rush generation module, time domain impulse waveform conditioning module, microwave burst pulse generation module and microwave pulse waveform conditioning module.
Time domain impulse generation module generates time domain impulsive signals using FPGA or pulse signal generator (HP8114A),
The time domain impulsive signals of generation are divided into two by 1:2 clock buffer, control microwave after level deviation and reverser all the way
Microwave switch in burst pulse generation module obtains premodulated pulse letter to the continuous wave signal premodulated of input to realize
Number;Another way enters time domain impulse waveform conditioning module, by time delay module therein, attenuation module and amplifier module, reaches
Suitable pulse amplitude level is simultaneously synchronous with the premodulated pulse signal obtained by microwave switch, then also enters the narrow arteries and veins of microwave
Generation module is rushed to be mixed to obtain initial microwave modulated narrow pulse signal with the microwave premodulated pulse signal in the module.
Above-mentioned signal enters microwave pulse waveform conditioning module, and by filter module therein and power amplifier module, output is most
Meet the microwave modulated narrow pulse signal of pulsewidth, front and back edge, pulse power eventually.
Fig. 3 be microwave switch premodulated connect very low frequencies mixing scheme effect picture, time domain impulse control microwave switch and with
Microwave switch premodulated pulse signal is mixed to obtain microwave modulated narrow pulse signal, in the frequency range of 1GHz to 5.8GHz,
Minimum pulse width 10ns, minimum period 40ns, along 3ns is less than before and after pulse, on-off ratio (on off ratio) is greater than 80dB.More than
The specific embodiment has been further described the purpose of the present invention, technical scheme and beneficial effects, is answered
Understand, the foregoing is merely a specific embodiment of the invention, are not intended to limit the scope of protection of the present invention, all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in guarantor of the invention
Within the scope of shield.
Claims (8)
1. a kind of nanosecond microwave narrow pulse modulator, include: time domain impulse generation module, time domain impulse waveform conditioning module,
Microwave burst pulse generation module and microwave pulse waveform conditioning module;The time domain impulse of the time domain impulse generation module output
It is divided into two-way time domain impulsive signals by 1:2 clock buffer, time domain impulsive signals enter the narrow arteries and veins of microwave by reverser all the way
Generation module is rushed, the Push And Release of microwave switch is controlled, to realize the continuous wave signal premodulated to input;Another way
Time domain impulsive signals pass through time domain impulse waveform conditioning module first, reach suitable pulse amplitude level and open with by microwave
It is synchronous to close obtained premodulated pulse signal, then also enters microwave burst pulse generation module and the microwave premodulated in the module
Pulse signal carries out mixed modulated, to generate initial microwave modulated narrow pulse signal;This improves mould by microwave pulse waveform
Block exports final microwave modulated narrow pulse signal.
2. a kind of nanosecond microwave narrow pulse modulator as described in claim 1, it is characterised in that: the time domain impulse conditioning
Module includes time delay module, and the attenuation module and amplifier module of adjustment pulse amplitude level.
3. a kind of nanosecond microwave narrow pulse modulator as described in claim 1, it is characterised in that: the microwave pulse waveform
Conditioning module includes filter module and power amplifier module.
4. a kind of nanosecond microwave narrow pulse modulator as described in claim 1, it is characterised in that: the time domain impulse generates
The time domain impulsive signals pulsewidth and cycle parameter that module generates are adjustable, most narrow spaces 10ns, minimum period 40ns.
5. a kind of nanosecond microwave narrow pulse modulator as described in claim 1, it is characterised in that: the time domain impulse generates
Module generates time domain impulse letter using FPGA, that is, Field-Programmable Gate Array or pulse signal generator
Number.
6. a kind of nanosecond microwave narrow pulse modulator as claimed in claim 2, it is characterised in that: the time delay module passes through
Accurate adjustable delay chip and logic control circuit are completed, and are mixed microwave switch pre-modulated signal with time domain impulsive signals together
Step, thus to obtain the control of accurate width parameter.
7. a kind of nanosecond microwave narrow pulse modulator as claimed in claim 2, it is characterised in that: the attenuation module is π
Type network attenuator, amplifier module includes high speed operation amplifier and its peripheral circuit, by optimizing and revising in amplifier module
Accurate feedback resistance obtains required time domain impulse amplitude level under frequency mixer optimum Working.
8. a kind of nanosecond microwave narrow pulse modulator as claimed in claim 3, it is characterised in that: the filter module uses
The super wide band microstrip bandpass filter being made of fan-shaped minor matters, short-circuit minor matters, open circuit minor matters, high Low ESR, realizes microwave pulse
Temporal low frequency leaks and is mixed higher harmonic component filtering in signal;Power amplifier module include wideband power amplifer chip and
Its peripheral circuit.
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CN201610325496.9A CN106027002B (en) | 2016-05-17 | 2016-05-17 | A kind of nanosecond microwave narrow pulse modulator |
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CN106027002B true CN106027002B (en) | 2019-06-21 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107390183B (en) * | 2017-08-22 | 2023-05-12 | 无锡晶磊电子有限公司 | Narrow pulse width high frequency modulator |
CN109597350B (en) * | 2018-12-07 | 2020-07-24 | 中国工程物理研究院应用电子学研究所 | Microwave switch pulse modulation control device based on FPGA |
CN112636165B (en) * | 2020-12-29 | 2022-12-09 | 广东国腾量子科技有限公司 | Temperature control module of multichannel synchronization output laser light source |
CN112701562B (en) * | 2020-12-29 | 2023-01-17 | 广东国腾量子科技有限公司 | Multi-path synchronous output laser light source module |
CN113098451B (en) * | 2021-03-02 | 2022-11-04 | 电子科技大学 | Broadband microwave narrow pulse modulator based on double-balance structure |
CN113824433B (en) * | 2021-08-26 | 2023-08-25 | 电子科技大学 | Pulse modulator based on schottky diode cascade |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US8144050B1 (en) * | 2009-02-11 | 2012-03-27 | The Boeing Company | Removing clutter from radar cross section measurements using spectral tagging |
CN103018731A (en) * | 2012-12-27 | 2013-04-03 | 中国电子科技集团公司第四十一研究所 | Radio-frequency hardware time domain gate circuit based on narrow-pulse modulators |
CN104374447A (en) * | 2014-11-21 | 2015-02-25 | 合肥工业大学 | Guided wave type radar level meter echo signal processing method based on first-order derivative with combination of reference curve |
CN104836549A (en) * | 2015-04-23 | 2015-08-12 | 中国电子科技集团公司第四十一研究所 | Device and method for generating pulse modulation signals adjustable in top-bottom power and used for micro-discharge effect detection |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8144050B1 (en) * | 2009-02-11 | 2012-03-27 | The Boeing Company | Removing clutter from radar cross section measurements using spectral tagging |
CN103018731A (en) * | 2012-12-27 | 2013-04-03 | 中国电子科技集团公司第四十一研究所 | Radio-frequency hardware time domain gate circuit based on narrow-pulse modulators |
CN104374447A (en) * | 2014-11-21 | 2015-02-25 | 合肥工业大学 | Guided wave type radar level meter echo signal processing method based on first-order derivative with combination of reference curve |
CN104836549A (en) * | 2015-04-23 | 2015-08-12 | 中国电子科技集团公司第四十一研究所 | Device and method for generating pulse modulation signals adjustable in top-bottom power and used for micro-discharge effect detection |
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