CN106017699A - Temperature detection system - Google Patents
Temperature detection system Download PDFInfo
- Publication number
- CN106017699A CN106017699A CN201610431698.1A CN201610431698A CN106017699A CN 106017699 A CN106017699 A CN 106017699A CN 201610431698 A CN201610431698 A CN 201610431698A CN 106017699 A CN106017699 A CN 106017699A
- Authority
- CN
- China
- Prior art keywords
- resistance
- pole
- pin
- audion
- processing chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a temperature detection system. The temperature detection system is characterized in that the temperature detection system is mainly composed of a processing chip U1, a temperature sensor U, a base trigger circuit, a capacitor C4, a resistor R10 and the like; the base trigger circuit is connected in series between the temperature sensor U and the IN+ pin of the processing chip U1; the positive pole of the capacitor C4 passes through a resistor R9 and a resistor R8 and thereafter is connected with the V+ pin of the processing chip U1; the negative pole of the capacitor C4 is connected with the BALANCE pin of the processing chip U1; and the R10 resistor is connected in series between the BALANCE pin of the processing chip U1 and the BAL pin of the processing chip U1. With the temperature detection system of the invention adopted, the frequency of detection signals can be processed, so that the frequency of the detection signal can be more stable, and therefore, the waveforms of inputted detection signals can be identical with the waveforms of outputted detection signals, the fidelity of the detection signals can be kept, and influence on temperature detection precision caused by signal distortion can be avoided.
Description
Technical field
The present invention relates to a kind of detecting system, specifically refer to a kind of system for detecting temperature.
Background technology
In industrial processes and research work, many times it is required for production equipment or production environment
Temperature carry out detecting and according to demand temperature being controlled, thus improve the quality of production efficiency and product.
But, existing system for detecting temperature easily makes detection distorted signals when to detection signal processing, thus leads
Cause it and cannot detect temperature value accurately, it is impossible to meet Production requirement.
Summary of the invention
It is an object of the invention to overcome current system for detecting temperature easily to make inspection when to detection signal processing
Survey the defect of distorted signals, it is provided that a kind of system for detecting temperature.
The purpose of the present invention realizes by following technical scheme: a kind of system for detecting temperature, mainly by processing chip
U1, temperature sensor U, be serially connected in the base stage between temperature sensor U and the IN+ pin processing chip U1 and touch
Power Generation Road, positive pole sequentially through resistance R9 after resistance R8 with process chip U1 V+ pin be connected, negative pole with
Process the electric capacity C4 that the BALANCE pin of chip U1 is connected, be serially connected in and process chip U1's
Resistance R10 between BALANCE pin and BAL pin, positive pole is connected with the BAL pin processing chip U1
Connect, negative pole be then connected with the GND pin processing chip U1 while the electric capacity C5 of ground connection, minus earth,
Positive pole after resistance R6 with the electric capacity C3 that is connected of IN-pin processing chip U1, and with process chip U1
OUT pin be connected emitter output circuit composition；The V-pin of described process chip U1 is with electric capacity C3's
Positive pole is connected；The junction point of described resistance R8 and resistance R9 triggers while circuit is connected with base stage and connects electricity
Source.
Further, described base stage triggers circuit by audion VT1, audion VT2, field effect transistor MOS,
Positive pole is connected with the emitter stage of audion VT1, negative pole sequentially after resistance R2 and resistance R7 with process chip
Electric capacity C1, the N pole that the IN+ pin of U1 is connected drain electrode with field effect transistor MOS after resistance R5 is connected,
P pole sequentially through diode D2, P pole that electric capacity C2 emitter stage with audion VT2 after resistance R1 is connected with
While the P pole of diode D2 is connected, ground connection, N pole source electrode with field effect transistor MOS after resistance R4 is connected
The diode D1 connect, and be serially connected between colelctor electrode and the grid of field effect transistor MOS of audion VT2
Resistance R3 forms；The base stage of described audion VT1 is connected with the signal input part of temperature sensor U, its collection
Electrode then base stage with audion VT2 is connected；The drain electrode of described field effect transistor MOS and resistance R8 and resistance
The junction point of R9 is connected.
Described emitter output circuit is by amplifier P, audion VT3, P pole and the OUT pin processing chip U1
Be connected, diode D3 that N pole is connected with the positive pole of amplifier P, be serially connected in the N pole and three of diode D3
Resistance R11 between the base stage of pole pipe VT3, and positive pole is connected with the outfan of amplifier P, negative pole is made
Electric capacity C6 composition for the outfan of this emitter output circuit；The minus earth of described amplifier P, its outfan
It is connected with the emitter stage of audion VT3；The grounded collector of described audion VT3.
Described process chip U1 is the integrated chip of LM311.
The present invention compared with prior art, has the following advantages and beneficial effect:
The frequency of detection signal can be processed by the present invention, and the frequency making detection signal is more stable, from
And the waveform of the detection signal of input can be made identical with the waveform of the detection signal of output, keep detection signal
Fidelity, it is to avoid distorted signals and affect temperature detecting precision.
Accompanying drawing explanation
Fig. 1 is the overall structure schematic diagram of the present invention.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is described in further detail, but embodiments of the present invention
It is not limited to this.
Embodiment
As it is shown in figure 1, the present invention is mainly by processing chip U1, temperature sensor U, it is serially connected in temperature sensor
Base stage between U and the IN+ pin processing chip U1 triggers circuit, and positive pole is sequentially through resistance R9 and resistance R8
Be connected with the V+ pin processing chip U1 afterwards, negative pole is connected with the BALANCE pin of process chip U1
Electric capacity C4, be serially connected in process chip U1 BALANCE pin and BAL pin between resistance R10, just
Pole is connected with the BAL pin processing chip U1, negative pole is then connected with the GND pin processing chip U1
The electric capacity C5 of ground connection simultaneously, minus earth, positive pole are connected with the IN-pin processing chip U1 after resistance R6
The electric capacity C3 connect, and the emitter output circuit composition being connected with the OUT pin processing chip U1；Described
The V-pin processing chip U1 is connected with the positive pole of electric capacity C3；The junction point of described resistance R8 and resistance R9 with
Base stage triggers while circuit is connected and connects power supply.In order to preferably implement the present invention, described process chip U1
The integrated chip of preferably LM311 realizes.This temperature sensor U then uses the limited public affairs of the pure strong development in science and technology in Beijing nine
The JCJ100ZGF temperature sensor that department produces realizes.
Further, base stage triggers circuit by audion VT1, audion VT2, field effect transistor MOS, resistance
R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R7, electric capacity C1, electric capacity C2, diode
D1 and diode D2 composition.
During connection, the positive pole of electric capacity C1 is connected with the emitter stage of audion VT1, its negative pole is sequentially through resistance
It is connected with the IN+ pin processing chip U1 after R2 and resistance R7.The N pole of diode D2 after resistance R5 with
The drain electrode of field effect transistor MOS is connected, its P pole is connected with the negative pole of electric capacity C2.The positive pole of this electric capacity C2
Then after resistance R1, emitter stage with audion VT2 is connected.The P pole of diode D1 and the P pole of diode D2
While being connected, ground connection, its N pole source electrode with field effect transistor MOS after resistance R4 is connected.Resistance R3
It is serially connected between colelctor electrode and the grid of field effect transistor MOS of audion VT2.
Meanwhile, the base stage of described audion VT1 be connected with the signal input part of temperature sensor U, its current collection
Pole then base stage with audion VT2 is connected.The drain electrode of described field effect transistor MOS and resistance R8 and resistance R9
Junction point be connected.
It addition, described emitter output circuit by amplifier P, audion VT3, resistance R11, diode D3 with
And electric capacity C6 composition.The P pole of diode D3 with process chip U1 OUT pin be connected, its N pole with put
The positive pole of big device P is connected.Resistance R11 is serially connected between the N pole of diode D3 and the base stage of audion VT3.
The positive pole of electric capacity C6 is connected with the outfan of amplifier P, its negative pole is as the outfan of this emitter output circuit
And connect external display.The emitter stage phase of the minus earth of described amplifier P, its outfan and audion VT3
Connect；The grounded collector of described audion VT3.
During work, it is electric to follow-up process to temperature the output detections signal of picture that temperature sensor U gathers actual measurement
Road, the frequency of detection signal can be processed by subsequent process circuit, and the frequency making detection signal is more steady
Fixed, such that it is able to make the waveform of the detection signal of input identical with the waveform of the detection signal of output, keep inspection
Survey signal fidelity, it is to avoid distorted signals and affect temperature detecting precision.
As it has been described above, just can well realize the present invention.
Claims (4)
1. a system for detecting temperature, it is characterised in that mainly by processing chip U1, temperature sensor U,
It is serially connected in the base stage between temperature sensor U and the IN+ pin processing chip U1 and triggers circuit, positive pole sequentially warp
Be connected with the V+ pin processing chip U1 after resistance R9 and resistance R8, negative pole and process chip U1
The electric capacity C4 that BALANCE pin is connected, is serially connected in BALANCE pin and the BAL processing chip U1
Resistance R10 between pin, positive pole with process chip U1 BAL pin be connected, negative pole then with process chip
The GND pin of U1 be connected while the electric capacity C5 of ground connection, minus earth, positive pole after resistance R6 with process
The electric capacity C3 that the IN-pin of chip U1 is connected, and with the penetrating of being connected of OUT pin processing chip U1
Pole output circuit composition；The described V-pin of process chip U1 is connected with the positive pole of electric capacity C3；Described resistance
The junction point of R8 and resistance R9 triggers while circuit is connected with base stage and connects power supply.
A kind of system for detecting temperature the most according to claim 1, it is characterised in that: described base stage triggers
Circuit by audion VT1, audion VT2, field effect transistor MOS, the emitter stage phase of positive pole and audion VT1
The electric capacity C1 that connection, negative pole are sequentially connected with the IN+ pin processing chip U1 after resistance R7 through resistance R2,
The drain electrode with field effect transistor MOS after resistance R5 of N pole is connected, P pole is sequentially after electric capacity C2 and resistance R1
While diode D2, the P pole being connected with the emitter stage of audion VT2 is connected with the P pole of diode D2
The diode D1 that ground connection, N pole are connected with the source electrode of field effect transistor MOS after resistance R4, and be serially connected in
Resistance R3 composition between colelctor electrode and the grid of field effect transistor MOS of audion VT2；Described audion
The base stage of VT1 is connected with the signal input part of temperature sensor U, its colelctor electrode then with the base of audion VT2
Pole is connected；The drain electrode of described field effect transistor MOS is connected with the junction point of resistance R8 and resistance R9.
A kind of system for detecting temperature the most according to claim 2, it is characterised in that: described emitter-base bandgap grading exports
Electricity routing amplifier P, audion VT3, P pole with process chip U1 OUT pin be connected, N pole with put
The diode D3 that the positive pole of big device P is connected, be serially connected in the N pole of diode D3 and audion VT3 base stage it
Between resistance R11, and positive pole is connected with the outfan of amplifier P, negative pole is as this emitter output circuit
Outfan electric capacity C6 composition；The minus earth of described amplifier P, its outfan are sent out with audion VT3's
Emitter-base bandgap grading is connected；The grounded collector of described audion VT3.
A kind of system for detecting temperature the most according to claim 3, it is characterised in that: described process chip
U1 is the integrated chip of LM311.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610431698.1A CN106017699A (en) | 2016-06-15 | 2016-06-15 | Temperature detection system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610431698.1A CN106017699A (en) | 2016-06-15 | 2016-06-15 | Temperature detection system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106017699A true CN106017699A (en) | 2016-10-12 |
Family
ID=57088426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610431698.1A Pending CN106017699A (en) | 2016-06-15 | 2016-06-15 | Temperature detection system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106017699A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109347063A (en) * | 2018-11-30 | 2019-02-15 | 武汉精能电子技术有限公司 | A kind of power device overheating detection protection circuit |
-
2016
- 2016-06-15 CN CN201610431698.1A patent/CN106017699A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109347063A (en) * | 2018-11-30 | 2019-02-15 | 武汉精能电子技术有限公司 | A kind of power device overheating detection protection circuit |
| CN109347063B (en) * | 2018-11-30 | 2024-03-15 | 武汉精能电子技术有限公司 | Overheat detection protection circuit of power device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105974958A (en) | High-precision signal acquisition and processing system for digital temperature controller | |
| CN105973482A (en) | Temperature detecting system based on interference eliminating circuit | |
| CN104410942A (en) | Phase shift type audio processing system by low-pass filtering and amplification | |
| CN106017699A (en) | Temperature detection system | |
| CN103698661A (en) | Cable breakage detection device | |
| CN104931136A (en) | Wide pulse triggering-based phase-shift type high-sensitivity infrared detection system | |
| CN106017700A (en) | Interference cancellation circuit-based gain amplification type temperature detection system | |
| CN105978502A (en) | Temperature detecting system based on linearity processing circuit | |
| CN203798892U (en) | Current sensor | |
| CN106200714A (en) | A kind of purpose digital temperature controller signal acquiring processing system based on frequency stabilization circuit | |
| CN203984389U (en) | A kind of detection system of high-sensitivity detection instrument | |
| CN203673022U (en) | Cable break detection device | |
| CN205453652U (en) | Photoelectricity pulse amplification shaping circuit | |
| CN105978503A (en) | Gain amplification type temperature detection system based on linearity processing circuit | |
| CN105973491A (en) | Temperature detecting system based on gain amplifying circuit | |
| CN104458005A (en) | High-sensitivity infrared detection system based on linear driving | |
| CN204313968U (en) | A kind of highly sensitive IR detection system | |
| CN203224808U (en) | Hysteresis loop current control circuit | |
| CN104065351B (en) | Power amplifier based on monolithic integrated circuit | |
| CN204301766U (en) | A kind of high frequency conversion demodulation system | |
| CN107703086A (en) | Temperature compensation type carbon dioxide detecting system based on signal buffering | |
| CN204479199U (en) | A kind of temperature collection circuit of solar power system | |
| CN106199157A (en) | A kind of signal amplifying type electrical network zero-crossing detection system based on biasing circuit | |
| CN202190394U (en) | Analog-digital converter and digital microphone | |
| CN104596648A (en) | High-sensitivity infrared detection system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161012 |