CN106009024A - Back film for silicon solar panel - Google Patents
Back film for silicon solar panel Download PDFInfo
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- CN106009024A CN106009024A CN201610420054.2A CN201610420054A CN106009024A CN 106009024 A CN106009024 A CN 106009024A CN 201610420054 A CN201610420054 A CN 201610420054A CN 106009024 A CN106009024 A CN 106009024A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 11
- 239000010703 silicon Substances 0.000 title claims abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 48
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims abstract description 38
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 32
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 27
- 229920002678 cellulose Polymers 0.000 claims abstract description 22
- 239000001913 cellulose Substances 0.000 claims abstract description 22
- 239000002904 solvent Substances 0.000 claims abstract description 19
- 239000011787 zinc oxide Substances 0.000 claims abstract description 16
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 14
- JLPULHDHAOZNQI-ZTIMHPMXSA-N 1-hexadecanoyl-2-(9Z,12Z-octadecadienoyl)-sn-glycero-3-phosphocholine Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@H](COP([O-])(=O)OCC[N+](C)(C)C)OC(=O)CCCCCCC\C=C/C\C=C/CCCCC JLPULHDHAOZNQI-ZTIMHPMXSA-N 0.000 claims abstract description 13
- 239000004254 Ammonium phosphate Substances 0.000 claims abstract description 13
- 235000021355 Stearic acid Nutrition 0.000 claims abstract description 13
- TXQVDVNAKHFQPP-UHFFFAOYSA-N [3-hydroxy-2,2-bis(hydroxymethyl)propyl] octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCC(CO)(CO)CO TXQVDVNAKHFQPP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910000148 ammonium phosphate Inorganic materials 0.000 claims abstract description 13
- 235000019289 ammonium phosphates Nutrition 0.000 claims abstract description 13
- 229910021538 borax Inorganic materials 0.000 claims abstract description 13
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 claims abstract description 13
- UQGFMSUEHSUPRD-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound [Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 UQGFMSUEHSUPRD-UHFFFAOYSA-N 0.000 claims abstract description 13
- 235000011187 glycerol Nutrition 0.000 claims abstract description 13
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 claims abstract description 13
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 claims abstract description 13
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 13
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 13
- 235000010339 sodium tetraborate Nutrition 0.000 claims abstract description 13
- 239000004328 sodium tetraborate Substances 0.000 claims abstract description 13
- 229940083466 soybean lecithin Drugs 0.000 claims abstract description 13
- 239000008117 stearic acid Substances 0.000 claims abstract description 13
- 238000002360 preparation method Methods 0.000 claims abstract description 12
- 235000014692 zinc oxide Nutrition 0.000 claims abstract description 7
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 24
- 238000002156 mixing Methods 0.000 claims description 18
- -1 monomethyl cis-butenedioic acid Chemical compound 0.000 claims description 18
- 239000000725 suspension Substances 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 13
- DXIJHCSGLOHNES-UHFFFAOYSA-N 3,3-dimethylbut-1-enylbenzene Chemical compound CC(C)(C)C=CC1=CC=CC=C1 DXIJHCSGLOHNES-UHFFFAOYSA-N 0.000 claims description 12
- 239000005062 Polybutadiene Substances 0.000 claims description 12
- 150000002009 diols Chemical class 0.000 claims description 12
- 238000001125 extrusion Methods 0.000 claims description 12
- 229920002857 polybutadiene Polymers 0.000 claims description 12
- 235000019260 propionic acid Nutrition 0.000 claims description 12
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 12
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 12
- 235000015112 vegetable and seed oil Nutrition 0.000 claims description 12
- 239000008158 vegetable oil Substances 0.000 claims description 12
- 239000002994 raw material Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000000498 ball milling Methods 0.000 claims description 6
- 238000005266 casting Methods 0.000 claims description 6
- 239000011247 coating layer Substances 0.000 claims description 6
- 239000002270 dispersing agent Substances 0.000 claims description 6
- 239000001866 hydroxypropyl methyl cellulose Substances 0.000 claims description 6
- 229920003088 hydroxypropyl methyl cellulose Polymers 0.000 claims description 6
- 235000010979 hydroxypropyl methyl cellulose Nutrition 0.000 claims description 6
- UFVKGYZPFZQRLF-UHFFFAOYSA-N hydroxypropyl methyl cellulose Chemical group OC1C(O)C(OC)OC(CO)C1OC1C(O)C(O)C(OC2C(C(O)C(OC3C(C(O)C(O)C(CO)O3)O)C(CO)O2)O)C(CO)O1 UFVKGYZPFZQRLF-UHFFFAOYSA-N 0.000 claims description 6
- 239000000155 melt Substances 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 238000010791 quenching Methods 0.000 claims description 6
- 230000000171 quenching effect Effects 0.000 claims description 6
- 238000010792 warming Methods 0.000 claims description 6
- RFRMMZAKBNXNHE-UHFFFAOYSA-N 6-[4,6-dihydroxy-5-(2-hydroxyethoxy)-2-(hydroxymethyl)oxan-3-yl]oxy-2-(hydroxymethyl)-5-(2-hydroxypropoxy)oxane-3,4-diol Chemical compound CC(O)COC1C(O)C(O)C(CO)OC1OC1C(O)C(OCCO)C(O)OC1CO RFRMMZAKBNXNHE-UHFFFAOYSA-N 0.000 claims description 2
- 239000004354 Hydroxyethyl cellulose Substances 0.000 claims description 2
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 10
- 239000002033 PVDF binder Substances 0.000 abstract description 4
- 229920002981 polyvinylidene fluoride Polymers 0.000 abstract description 4
- 239000002131 composite material Substances 0.000 abstract description 3
- PTBDIHRZYDMNKB-UHFFFAOYSA-N 2,2-Bis(hydroxymethyl)propionic acid Chemical compound OCC(C)(CO)C(O)=O PTBDIHRZYDMNKB-UHFFFAOYSA-N 0.000 abstract 1
- FXRQXYSJYZPGJZ-UHFFFAOYSA-N 2-[(2-methylpropan-2-yl)oxy]ethenylbenzene Chemical compound CC(C)(C)OC=CC1=CC=CC=C1 FXRQXYSJYZPGJZ-UHFFFAOYSA-N 0.000 abstract 1
- 229920002121 Hydroxyl-terminated polybutadiene Polymers 0.000 abstract 1
- NKHAVTQWNUWKEO-UHFFFAOYSA-N fumaric acid monomethyl ester Natural products COC(=O)C=CC(O)=O NKHAVTQWNUWKEO-UHFFFAOYSA-N 0.000 abstract 1
- NKHAVTQWNUWKEO-IHWYPQMZSA-N methyl hydrogen fumarate Chemical compound COC(=O)\C=C/C(O)=O NKHAVTQWNUWKEO-IHWYPQMZSA-N 0.000 abstract 1
- 239000010773 plant oil Substances 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- 235000010215 titanium dioxide Nutrition 0.000 abstract 1
- 239000010408 film Substances 0.000 description 26
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 229920002620 polyvinyl fluoride Polymers 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
- 239000010410 layer Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
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- C08L27/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
- C08L27/02—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
- C08L27/12—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
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- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
- C08L33/10—Homopolymers or copolymers of methacrylic acid esters
- C08L33/12—Homopolymers or copolymers of methyl methacrylate
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
- C09D4/06—Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09D159/00 - C09D187/00
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- C09D7/40—Additives
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H01L31/049—Protective back sheets
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Abstract
The invention provides a back film for a silicon solar panel. The back film is prepared from graphene, ammonium phosphate, sodium tetraborate, zinc oxide, silicon carbide, soybean lecithin, plant oil, titanium dioxide, glycerin, stearic acid, hydroxyl terminated polybutadiene, dimethylolpropionic acid, polyvinylidene fluoride, polymethyl methacrylate, tert-butoxystyrene, hexafluoropropylene, pentaerythritol stearate, maleic acid monomethyl ester, cellulose and a solvent. A preparation method includes the step that graphene is modified and then mixed with a composite system to prepare the back film. By adding the modified graphene into the back film composite system, mechanical properties, weather resistance and adhesion performance of the back film material can be improved.
Description
Technical field
The invention belongs to technical field of solar, be specifically related to the notacoria of a kind of silicon solar cell plate.
Background technology
Solar cell backboard is to apply one of crucial encapsulating material on photovoltaic module, mainly by fluorine material and excellent the constituting of electric insulating quality of excellent in weather.Photovoltaic products uses in all conglomeraties because of advantages such as energy-saving and environmental protection, length in service life, it can be ensured that using 25 years, photoelectric conversion rate is not less than 80%, and wherein notacoria is to ensure that the key that component system photoelectric conversion rate is decayed.Solar battery back film is positioned at the outer layer of photovoltaic module, nucleus cell piece is made to accomplish that vacuum seals for intercepting air after cohering with EVA, and the top priority sealed is to accomplish that water resistance every, air barrier and electrically isolates, therefore high-quality solar cell notacoria should possess high electric insulating quality, high-weatherability, high-adhesion, low moisture permeability.
The solar cell of Ground Application works in an atmosphere, high humidity, corrosion-vulnerable, it is likely that damaged by the natural disaster such as dust storm, hail, and solar spectrum composition and irradiation intensity change greatly.Because particular/special requirement, notacoria needs good mechanical strength, electrology characteristic, good weatherability and uvioresistant performance.
Polyvinyl fluoride composite membrane commonly used by the backboard being currently used for solar module encapsulation; general conventional three-decker (PVF/PET/PVF); outer protective layer has good environment resistant erosiveness; intermediate layer is that mylar has good insulating properties, and internal layer needs surface treated and has good adhesive property.And compared with PVF, PVDF many fluorine atoms on molecular structure, its fluorinated volume is 59% much larger than the 41% of PVF, shows barrier finer and close than PVF, more preferable and more resistant to the feature waited.But PVDF processing difficulties, is difficult to obtain smooth surface, homogeneous thin film, poor and expensive with the adhesive property of other materials, have impact on the PVDF extensive application at thin film materials art.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art to provide notacoria of a kind of silicon solar cell plate and preparation method thereof, gained back membrane material has good mechanical property, weatherability and adhesive property.
A kind of notacoria of silicon solar cell plate, raw material includes in parts by weight: Graphene 5～10 parts, ammonium phosphate 0.8～3.2 parts, sodium tetraborate 0.2～1.5 parts, zinc oxide 0.5～2.3 parts, carborundum 0.4～1.5 parts, soybean lecithin 1～3 parts, vegetable oil 2～5 parts, titanium dioxide 4～9 parts, glycerol 3～7 parts, stearic acid 2～5 parts, polybutadiene diol 1～6 parts, dihydromethyl propionic acid 3～6 parts, Kynoar 10～20 parts, polymethyl methacrylate 10～20 parts, t-butyl styrene 1～5 parts, hexafluoropropene 0.4～2.5 parts, pentaerythritol stearate 0.1～0.8 part, monomethyl cis-butenedioic acid 0.4～1.5 parts, cellulose 2～4 parts, solvent 5～10 parts.
Further, described cellulose is hydroxypropyl methyl cellulose or hydroxyethyl cellulose.
Further, described solvent is N,N-DMAA.
The preparation method of the solar energy back film of described doped graphene, comprises the following steps:
Step 1, taking Graphene, ammonium phosphate, sodium tetraborate, zinc oxide, carborundum, soybean lecithin, vegetable oil mixing, mixture is at 1200～1250 DEG C of meltings 45～60 min, and melts puts into quenching-in water, again the block that quenching produces is pulverized, obtain modified graphene；
Step 2, by modified graphene, titanium dioxide, glycerol, stearic acid, polybutadiene diol, dihydromethyl propionic acid, Kynoar, polymethyl methacrylate mixing, ball milling, mixture is sent into twin-screw extrusion casting film-forming, is obtained base film；
Step 3, by t-butyl styrene, hexafluoropropene, pentaerythritol stearate, monomethyl cis-butenedioic acid, cellulose, dispersant, solvent mixing, ultrasonic disperse, obtains suspension；
Step 4, is heated to 90～110 DEG C by base film, keeps 15～30 min, the most at such a temperature, is applied on base film by suspension, is warming up to 120～140 DEG C, keeps 30～60 min, lets cool,.
Further, in step 1, the granularity of modified graphene is 400～800 μm.
Further, in step 2, the condition of twin-screw extrusion is 180～200 DEG C, 170～190rpm.
Further, in step 3, ultrasonic disperse condition is 30～50KHz, 20～30min.
Further, the coating layer thickness that in step 4, suspension is applied on base film is 2～4 μm.
The present invention, by adding modified graphene in notacoria compound system, can improve the mechanical property of back membrane material, weatherability, adhesive property.
Detailed description of the invention
Embodiment 1
A kind of notacoria of silicon solar cell plate, raw material includes in parts by weight: Graphene 5 parts, 0.8 part of ammonium phosphate, sodium tetraborate 0.2 part, zinc oxide 0.5 part, carborundum 0.4 part, soybean lecithin 1 part, vegetable oil 2 parts, titanium dioxide 4 parts, glycerol 3 parts, stearic acid 2 parts, polybutadiene diol 1 part, dihydromethyl propionic acid 3 parts, Kynoar 10 parts, polymethyl methacrylate 10 parts, t-butyl styrene 1 part, hexafluoropropene 0.4 part, pentaerythritol stearate 0.1 part, monomethyl cis-butenedioic acid 0.4 part, cellulose 2 parts, solvent 5 parts.
Wherein, described cellulose is hydroxypropyl methyl cellulose, and solvent is N,N-DMAA.
The preparation method of the solar energy back film of described doped graphene, comprises the following steps:
Step 1, takes Graphene, ammonium phosphate, sodium tetraborate, zinc oxide, carborundum, soybean lecithin, vegetable oil mixing, and mixture is at 1200 DEG C of melting 60 min, and melts puts into quenching-in water, then block quenching produced is pulverized, and obtains modified graphene；
Step 2, by modified graphene, titanium dioxide, glycerol, stearic acid, polybutadiene diol, dihydromethyl propionic acid, Kynoar, polymethyl methacrylate mixing, ball milling, mixture is sent into twin-screw extrusion casting film-forming, is obtained base film；
Step 3, by t-butyl styrene, hexafluoropropene, pentaerythritol stearate, monomethyl cis-butenedioic acid, cellulose, dispersant, solvent mixing, ultrasonic disperse, obtains suspension；
Step 4, is heated to 90 DEG C by base film, keeps 30min, the most at such a temperature, is applied on base film by suspension, is warming up to 120 DEG C, keep 60 min, let cool,.
Wherein, in step 1, the granularity of modified graphene is 400 μm；In step 2, the condition of twin-screw extrusion is 180 DEG C, 190rpm；In step 3, ultrasonic disperse condition is 30KHz, 30min；The coating layer thickness that in step 4, suspension is applied on base film is 2 μm.
Embodiment 2
A kind of notacoria of silicon solar cell plate, raw material includes in parts by weight: Graphene 8 parts, 1.4 parts of ammonium phosphate, sodium tetraborate 0.7 part, zinc oxide 0.9 part, carborundum 0.6 part, soybean lecithin 2 parts, vegetable oil 4 parts, titanium dioxide 8 parts, glycerol 5 parts, stearic acid 4 parts, polybutadiene diol 5 parts, dihydromethyl propionic acid 4 parts, Kynoar 13 parts, polymethyl methacrylate 18 parts, t-butyl styrene 4 parts, hexafluoropropene 0.9 part, pentaerythritol stearate 0.5 part, monomethyl cis-butenedioic acid 0.8 part, cellulose 3 parts, solvent 8 parts.
Wherein, described cellulose is hydroxypropyl methyl cellulose, and solvent is N,N-DMAA.
The preparation method of the solar energy back film of described doped graphene, comprises the following steps:
Step 1, takes Graphene, ammonium phosphate, sodium tetraborate, zinc oxide, carborundum, soybean lecithin, vegetable oil mixing, and mixture is at 1250 DEG C of melting 45 min, and melts puts into quenching-in water, then block quenching produced is pulverized, and obtains modified graphene；
Step 2, by modified graphene, titanium dioxide, glycerol, stearic acid, polybutadiene diol, dihydromethyl propionic acid, Kynoar, polymethyl methacrylate mixing, ball milling, mixture is sent into twin-screw extrusion casting film-forming, is obtained base film；
Step 3, by t-butyl styrene, hexafluoropropene, pentaerythritol stearate, monomethyl cis-butenedioic acid, cellulose, dispersant, solvent mixing, ultrasonic disperse, obtains suspension；
Step 4, is heated to 100 DEG C by base film, keeps 20min, the most at such a temperature, is applied on base film by suspension, is warming up to 130 DEG C, keeps 40min, lets cool,.
Wherein, in step 1, the granularity of modified graphene is 600 μm；In step 2, the condition of twin-screw extrusion is 190 DEG C, 180rpm；In step 3, ultrasonic disperse condition is 40KHz, 20min；The coating layer thickness that in step 4, suspension is applied on base film is 3 μm.
Embodiment 3
A kind of notacoria of silicon solar cell plate, raw material includes in parts by weight: Graphene 9 parts, 2 parts of ammonium phosphate, sodium tetraborate 1 part, zinc oxide 1.5 parts, carborundum 1.2 parts, soybean lecithin 2 parts, vegetable oil 3 parts, titanium dioxide 5 parts, glycerol 4 parts, stearic acid 4 parts, polybutadiene diol 5 parts, dihydromethyl propionic acid 4 parts, Kynoar 18 parts, polymethyl methacrylate 12 parts, t-butyl styrene 4 parts, hexafluoropropene 1.5 parts, pentaerythritol stearate 0.7 part, monomethyl cis-butenedioic acid 0.9 part, cellulose 3 parts, solvent 8 parts.
Wherein, described cellulose is hydroxypropyl methyl cellulose, and solvent is N,N-DMAA.
The preparation method of the solar energy back film of described doped graphene, comprises the following steps:
Step 1, takes Graphene, ammonium phosphate, sodium tetraborate, zinc oxide, carborundum, soybean lecithin, vegetable oil mixing, and mixture is at 1200 DEG C of melting 60 min, and melts puts into quenching-in water, then block quenching produced is pulverized, and obtains modified graphene；
Step 2, by modified graphene, titanium dioxide, glycerol, stearic acid, polybutadiene diol, dihydromethyl propionic acid, Kynoar, polymethyl methacrylate mixing, ball milling, mixture is sent into twin-screw extrusion casting film-forming, is obtained base film；
Step 3, by t-butyl styrene, hexafluoropropene, pentaerythritol stearate, monomethyl cis-butenedioic acid, cellulose, dispersant, solvent mixing, ultrasonic disperse, obtains suspension；
Step 4, is heated to 90 DEG C by base film, keeps 30min, the most at such a temperature, is applied on base film by suspension, is warming up to 120 DEG C, keep 60 min, let cool,.
Wherein, in step 1, the granularity of modified graphene is 400 μm；In step 2, the condition of twin-screw extrusion is 180 DEG C, 190rpm；In step 3, ultrasonic disperse condition is 30KHz, 30min；The coating layer thickness that in step 4, suspension is applied on base film is 2 μm.
Embodiment 4
A kind of notacoria of silicon solar cell plate, raw material includes in parts by weight: Graphene 10 parts, 3.2 parts of ammonium phosphate, sodium tetraborate 1.5 parts, zinc oxide 2.3 parts, carborundum 1.5 parts, soybean lecithin 3 parts, vegetable oil 5 parts, titanium dioxide 9 parts, glycerol 7 parts, stearic acid 5 parts, polybutadiene diol 6 parts, dihydromethyl propionic acid 6 parts, Kynoar 20 parts, polymethyl methacrylate 20 parts, t-butyl styrene 5 parts, hexafluoropropene 2.5 parts, pentaerythritol stearate 0.8 part, monomethyl cis-butenedioic acid 1.5 parts, cellulose 4 parts, solvent 10 parts.
Wherein, described cellulose is hydroxypropyl methyl cellulose, and solvent is N,N-DMAA.
The preparation method of the solar energy back film of described doped graphene, comprises the following steps:
Step 1, takes Graphene, ammonium phosphate, sodium tetraborate, zinc oxide, carborundum, soybean lecithin, vegetable oil mixing, and mixture is at 1250 DEG C of melting 45 min, and melts puts into quenching-in water, then block quenching produced is pulverized, and obtains modified graphene；
Step 2, by modified graphene, titanium dioxide, glycerol, stearic acid, polybutadiene diol, dihydromethyl propionic acid, Kynoar, polymethyl methacrylate mixing, ball milling, mixture is sent into twin-screw extrusion casting film-forming, is obtained base film；
Step 3, by t-butyl styrene, hexafluoropropene, pentaerythritol stearate, monomethyl cis-butenedioic acid, cellulose, dispersant, solvent mixing, ultrasonic disperse, obtains suspension；
Step 4, is heated to 110 DEG C by base film, keeps 15min, the most at such a temperature, is applied on base film by suspension, is warming up to 140 DEG C, keep 30 min, let cool,.
Wherein, in step 1, the granularity of modified graphene is 800 μm；In step 2, the condition of twin-screw extrusion is 200 DEG C, 170rpm；In step 3, ultrasonic disperse condition is 50KHz, 20min；The coating layer thickness that in step 4, suspension is applied on base film is 4 μm.
Embodiment 5
The present embodiment is with the difference of embodiment 2: notacoria raw material does not include zinc oxide.
Embodiment 6
The present embodiment is with the difference of embodiment 5: notacoria does not the most include cellulose.
Embodiment 1 to 6 gained notacoria is carried out performance test, and result is as follows:
As seen from the above table, the present invention, by adding modified graphene in notacoria compound system, can improve the mechanical property of back membrane material, weatherability, adhesive property.Knowable to embodiment 5, the addition of zinc oxide can improve the mechanical property of back membrane material, this is possibly due to zinc oxide can improve the dispersibility of Graphene, it is to avoid compound system produces defect；In embodiment 6, the membership that adds of cellulose affects the adhesion strength of back membrane material, and this surface group being possibly due to cellulose can make titanium dioxide uniformly dispersing in compound system, thus improves adhesive property.
Claims (8)
1. the notacoria of a silicon solar cell plate, it is characterized in that: raw material includes in parts by weight: Graphene 5～10 parts, ammonium phosphate 0.8～3.2 parts, sodium tetraborate 0.2～1.5 parts, zinc oxide 0.5～2.3 parts, carborundum 0.4～1.5 parts, soybean lecithin 1～3 parts, vegetable oil 2～5 parts, titanium dioxide 4～9 parts, glycerol 3～7 parts, stearic acid 2～5 parts, polybutadiene diol 1～6 parts, dihydromethyl propionic acid 3～6 parts, Kynoar 10～20 parts, polymethyl methacrylate 10～20 parts, t-butyl styrene 1～5 parts, hexafluoropropene 0.4～2.5 parts, pentaerythritol stearate 0.1～0.8 part, monomethyl cis-butenedioic acid 0.4～1.5 parts, cellulose 2～4 parts, solvent 5～10 parts.
The solar energy back film of doped graphene the most according to claim 1, it is characterised in that: described cellulose is hydroxypropyl methyl cellulose or hydroxyethyl cellulose.
The solar energy back film of doped graphene the most according to claim 1, it is characterised in that: described solvent is N,N-DMAA.
4. the preparation method of the solar energy back film of the doped graphene described in claim 1, it is characterised in that: comprise the following steps:
Step 1, taking Graphene, ammonium phosphate, sodium tetraborate, zinc oxide, carborundum, soybean lecithin, vegetable oil mixing, mixture is at 1200～1250 DEG C of meltings 45～60 min, and melts puts into quenching-in water, again the block that quenching produces is pulverized, obtain modified graphene；
Step 2, by modified graphene, titanium dioxide, glycerol, stearic acid, polybutadiene diol, dihydromethyl propionic acid, Kynoar, polymethyl methacrylate mixing, ball milling, mixture is sent into twin-screw extrusion casting film-forming, is obtained base film；
Step 3, by t-butyl styrene, hexafluoropropene, pentaerythritol stearate, monomethyl cis-butenedioic acid, cellulose, dispersant, solvent mixing, ultrasonic disperse, obtains suspension；
Step 4, is heated to 90～110 DEG C by base film, keeps 15～30 min, the most at such a temperature, is applied on base film by suspension, is warming up to 120～140 DEG C, keeps 30～60 min, lets cool,.
The preparation method of the solar energy back film of doped graphene the most according to claim 4, it is characterised in that: in step 1, the granularity of modified graphene is 400～800 μm.
The preparation method of the solar energy back film of doped graphene the most according to claim 4, it is characterised in that: in step 2, the condition of twin-screw extrusion is 180～200 DEG C, 170～190rpm.
The preparation method of the solar energy back film of doped graphene the most according to claim 4, it is characterised in that: in step 3, ultrasonic disperse condition is 30～50KHz, 20～30min.
The preparation method of the solar energy back film of doped graphene the most according to claim 4, it is characterised in that: the coating layer thickness that in step 4, suspension is applied on base film is 2～4 μm.
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