CN105992115A - Electrical wiring structure and electrical wiring method of silicon condenser microphone - Google Patents
Electrical wiring structure and electrical wiring method of silicon condenser microphone Download PDFInfo
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- CN105992115A CN105992115A CN201510092043.1A CN201510092043A CN105992115A CN 105992115 A CN105992115 A CN 105992115A CN 201510092043 A CN201510092043 A CN 201510092043A CN 105992115 A CN105992115 A CN 105992115A
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- capacitor microphone
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Abstract
The invention provides an electrical wiring structure and an electrical wiring method of a silicon condenser microphone. The electrical wiring structure comprises a substrate, non-conductive layers and conductive layers, wherein a plurality of step structures are formed among the substrate, the non-conductive layers and the conductive layers, a plurality of metal electrodes are attached onto the plurality of step structures and used for forming electrical connection between the conductive layers which are insulated from each other. The electrical wiring method comprises the steps of: S1, growing one or more groups of the sacrificial layers and the conductive layers on the substrate in a staggered manner, and forming the plurality of step structures among the sacrificial layers, the conductive layers and the substrate; S2, and growing a metal layer, reserving the plurality of metal electrodes which are attached onto the plurality of step structures in the metal layer, and removing other parts of the metal layer. The electrical wiring structure and the electrical wiring method can achieve the functions of electrical connection, wiring intersection and electrical shielding between different conductive layers according to setting requirements of the silicon condenser microphone, so as to improve indexes such as sensitivity, linearity and signal-to-noise ratio of the silicon condenser microphone.
Description
Technical field
The present invention relates to silicon microphone technical field, particularly to a kind of sensitive knot for silicon capacitor microphone
Structure and electrical connecting wires method thereof.
Background technology
Micro electronmechanical (MEMS micro-electro-mechanical system) mike or title silicon capacitor microphone
Because its volume is little, is suitable to the advantages such as surface mount and is widely used in the sound collection of tablet electronic device, example
As: mobile phone, MP3, recording pen and monitoring equipment etc..In correlation technique, silicon capacitor microphone includes sensitivity
Structure (also known as transducer), supporting integrated circuit and package parts, sensitive structure includes again substrate, backplane
Plate and vibrating diaphragm.Wherein, by the electric signal of the parts such as the back pole plate of sensitive structure, vibrating diaphragm to supporting integrated electricity
Road or other package parts are electrically drawn, and are after acoustical signal is converted into the signal of telecommunication, in signal of telecommunication transmittance process
Requisite link.
In signal of telecommunication transmittance process, the realization of the function such as electrical connection, cabling intersection, electric shield is corresponding
Electrical connection and the interference of differing complexity, relevant to signal of telecommunication Transfer Quality.At high performance silicon electric capacity
In microphone products, the electrical traces of sensitive structure directly influence the overall sensitivity of silicon capacitor microphone,
The index such as the linearity, signal to noise ratio.
Lift-off technique is a kind of method being set up target material structure by expendable material on the surface of the substrate.
Traditional silicon capacitor microphone generally uses lift-off technique and makes pad respectively in different conductive layer flat places
(contact point) be used for electrical lead wire, by the signal of telecommunication draw, or conductive layer flat place make large-area metal layer with
Improving local conductivity and optimize electric shield effect, such metal level makes and realizes difficulty on stripping technology
Minimum the most directly perceived.But along with the raising of silicon capacitor microphone performance, more complicated electric on sensitive structure
Cabling is the most gradually paid attention to.Chinese patent CN101427593A and CN103552980A uses many respectively
Individual electrical contact leads and on the electrically conductive arrange shielding metal level to improve sensitive structure electrical traces.Such
Scheme avoids and arranges the difficulty that metal level realizes being electrically connected on conductive layer ledge structure, but electrically walks
The degree of flexibility of line also receives limitation, so that silicon capacitor microphone sensitivity, the linearity, signal to noise ratio etc.
The optimization of index is limited to.
Summary of the invention
It is an object of the invention to overcome existing silicon capacitor microphone above-mentioned present in the electrical connecting wires technology
Defect, it is provided that a kind of electrical connecting wires structure for silicon capacitor microphone and bus connection method thereof, can be existing
On sensitive structure, carry out more flexible electrical traces under technological level arrange, thus it is logical to optimize signal of telecommunication transmission
Road, further to improve the indexs such as the sensitivity of silicon capacitor microphone, the linearity, signal to noise ratio.
For reaching above-mentioned purpose, the technical solution used in the present invention is:
A kind of electrical connecting wires structure of silicon capacitor microphone, including substrate, non-conductive layer and conductive layer, described
Substrate, non-conductive layer and conductive layer are formed with multiple ledge structure by lift-off technique each other, wherein,
Multiple metal electrode it is attached with, in order to the shape between the conductive layer of mutually insulated on the plurality of ledge structure
Become electrical connection.Lift-off technique is generally used at different conductive layers relative to traditional silicon capacitor microphone
Flat place makes the connecting line construction of pad (contact point) respectively, or makes large-area metal layer in conductive layer flat place
To improve the connecting line construction of local conductivity optimization electric shield effect, the present invention is the Step-edge Junction in non-flat forms
Metal electrode is set at structure to connect different conductive layers.If realizing requirement for technique to increase, the most this
Connected mode can arbitrarily be arranged；If technique realizes compatible with common processes to ensure production process and cost
Constant, then need to be limited when arranging the corresponding metal level connecting different conductive layers.
The preferably electrical connecting wires knot of silicon capacitor microphone, the ledge structure of wherein said adhesion metal electrode is high
Degree difference is less than 10 microns.When shoulder height is too high, metal level growth course exists due to drop excessive and
The process risk of fracture, therefore for making technology difficulty be basically unchanged, need to be any limitation as shoulder height.
The preferably electrical connecting wires knot of silicon capacitor microphone, wherein said conductive be doped monocrystalline silicon or
DOPOS doped polycrystalline silicon.In prepared by existing silicon capacitor microphone sensitive structure, doped monocrystalline silicon and doped polycrystalline
Silicon is the material that can form Ohmic contact between two kinds and metal level.Use both materials, can make electrically to believe
Number from conductive layer to metal level transmit time loss and experienced interference less.
The preferably electrical connecting wires knot of silicon capacitor microphone, wherein said is attached on described ledge structure
Metal electrode connects two conductive layers the most different.This is to connect upper and lower two conductive layers, its technique effect
Be equivalent in board-level circuit, make blind hole to connect two different layers.
The preferably electrical connecting wires knot of silicon capacitor microphone, wherein said is attached on described ledge structure
Metal electrode, connects that two the most identical but conductive layer that geometry disconnects.This is to connect with layer electric conductor, its
Technique effect is equivalent to make fly line in board-level circuit to connect two pieces of zoness of different.
The preferably electrical connecting wires knot of silicon capacitor microphone, be wherein staggered between different conductive layers is non-conductive
Being filled with sacrificial layer material in Ceng, the described sacrificial layer material of part can be removed after completing lift-off technique.
Not only can walk around unnecessary dodging, it is also possible to by the way of underlying sacrificial layer is removed by the later stage, use air
Insulation replaces sacrifice layer to insulate.When sacrifice layer dielectric constant is more than air, the spuious of cabling can be reduced
And parasitic capacitance.
The preferably electrical connecting wires knot of silicon capacitor microphone, that fills between wherein said different conductive layers is sacrificial
Domestic animal layer material, after removing specified portions, has between the conductive layer that part is not adhered to by described metal electrode
Standby mobility, but be covered, typically with metal layers between two conductive layers of connection, at metal level link position without relative motion.
Make partial electroconductive layer become movable by the method removing sacrifice layer, be silicon capacitor microphone sensitive structure system
Standby standard technology.But in the present invention, owing to there is the situation of two conductive layers using metal level to connect,
If compatible with common processes constant to ensure production process and cost for making technique realize, then need to phase be set
Limited during the metal level connecting different conductive layers answered.Make to be covered, typically with metal layers connection two conductive layers it
Between, at metal level link position without relative motion.So can avoid the metal level of electric interconnection function by
There is fatigue fracture in the relative motion of conductive layer, thus cause the risk of electrically disconnection.
It addition, the invention allows for a kind of electrical connecting wires method of silicon capacitor microphone, it is characterised in that
Comprise the following steps:
S1: one or more groups staggered sacrifice layer and conductive layer on substrate, and utilize shelter and etch
Method partial sacrificial layer, conductive layer or substrate are exposed in atmosphere, thus at sacrifice layer, conductive layer
Or between substrate, form multiple ledge structure；
S2: growth layer of metal layer covers on the overall structure obtained by step S1, by sheltering, losing
Carving method and lift-off technique, retain be attached in described metal level on the plurality of ledge structure multiple
Metal electrode, removes other parts of described metal level.
Preferably the electrical connecting wires method of silicon capacitor microphone, the most also includes step S3: remove unwanted
Sacrificial layer material.Compared with prior art, the invention has the beneficial effects as follows:
The present invention carries out more flexible electrical traces structure on sensitive structure and arranges, thus optimizes the signal of telecommunication and pass
Pass path, further to improve the indexs such as the sensitivity of silicon capacitor microphone, the linearity, signal to noise ratio.By
In using technical scheme, production efficiency, reliability, yield and cost base can kept
Enhance product performance on the basis of this is constant, widen the application scenario of product, increase product competitiveness.
Accompanying drawing explanation
Fig. 1 is the schematic diagram using lift-off technology corded arrangement in traditional silicon capacitor microphone；
Fig. 2 is the schematic diagram of an embodiment of the silicon capacitor microphone electrical connecting wires structure of the present invention；
Fig. 3～Fig. 8 is that a preferred embodiment of the silicon capacitor microphone electrical connecting wires method of the present invention is to identical
Electrical connection, cabling with different conductive layers intersect, the implementation step schematic diagram of electric shield.
Detailed description of the invention
The invention provides a kind of electrical connecting wires structure for silicon capacitor microphone and bus connection method thereof, can be
On sensitive structure, carry out more flexible electrical traces under existing technological level arrange, thus optimize the signal of telecommunication and pass
Pass path, further to improve the indexs such as the sensitivity of silicon capacitor microphone, the linearity, signal to noise ratio.Under
Face combines concrete drawings and Examples, and the invention will be further described.
Fig. 1 is the structural representation of the use lift-off technique of traditional silicon capacitor microphone.Lead different
The flat place of electric layer 31/32 makes pad (contact point) 41/42 respectively and is used for electrical lead wire, is drawn by the signal of telecommunication,
Or make large-area metal layer (not shown) to improve local conductivity optimization electricity in conductive layer 31/32 flat place
Gas shield effect, the making of such metal level and stripping technology realizes difficulty minimum the most directly perceived.Such
Scheme avoids and arranges the difficulty that metal level realizes being electrically connected on conductive layer ledge structure, but electrically walks
The degree of flexibility of line also receives limitation, so that silicon capacitor microphone sensitivity, the linearity, signal to noise ratio etc.
The optimization of index is limited to.
Fig. 2 is the schematic diagram of an embodiment of the silicon capacitor microphone electrical connecting wires structure of the present invention.Such as Fig. 2
Shown in, this embodiment of the present invention include substrate 101 ' and be crisscross arranged on substrate 101 ' non-conductive
Layer (sacrifice layer) 201 ' and 202 ', conductive layer 301 ' and 302 '.By mask and engraving method so that lead
Electric layer 301 ' and 302 ', and it is formed with ledge structure between conductive layer 301 ' and substrate 101 ', the most absolutely
It is attached with metal electrode 401 ' on the ledge structure that the conductive layer 301 ' and 302 ' of edge is formed, thus realizes conduction
Electrical connection between layer 301 ' and 302 '.It is to say, the present invention needs to arrange at the step of non-flat forms
Metal electrode also connects different conductive layers.If realizing requirement for technique to increase, the most this connected mode can
Arbitrarily to arrange；If technique realizes compatible with common processes constant to ensure production process and cost, then need
Limited when arranging the corresponding metal electrode connecting different conductive layers.
Fig. 3～Fig. 8 is that identical and the electrical connection of different conductive layers, cabling are handed over by the preferred embodiments of the present invention
Fork, the implementation step schematic diagram of electric shield.This preferred embodiment to be embodied as step as follows:
A) as it is shown on figure 3, first grow one layer of sacrifice layer 201 on the substrate 101 of doped single crystal silicon materials,
The conductive layer 301 of one layer of doped polycrystalline silicon materials of regrowth, and use mask plate to shelter and etching conductive layer 301,
The part making sacrifice layer 201 comes out.
B) as shown in Figure 4, on the basis of Fig. 3 works, one layer of sacrifice layer 202 of regrowth, by conductive layer 301
All shelter with sacrifice layer 201.
C) as it is shown in figure 5, Fig. 4 work on the basis of, the conductive layer of one layer of doped polycrystalline silicon materials of regrowth
302, and use mask plate to shelter and etching conductive layer 302 so that a part for sacrifice layer 202 comes out.
D) as shown in Figure 6, on the basis of Fig. 5 works, mask plate is sheltered and etching sacrificial layer 201 and 202,
The part making conductive layer 201 and substrate 101 comes out.
E) as it is shown in fig. 7, Fig. 6 work on the basis of, growth layer of metal layer and use mask plate shelter and
Etching, peels off unwanted metal level by lift-off technique, leaves metal electrode 401.
F) as shown in Figure 8, on the basis of Fig. 7 works, unwanted sacrifice layer 201 and 202 material is removed,
But make to be covered, typically with metal layers between two conductive layers of connection, at metal level link position without relative motion.So,
Can obtain connecting the metal level 4011 of conductive polycrystalline silicon floor 201 and 202, connect conductive polycrystalline silicon floor 201
With conductive substrate layer 101 metal level 4011, connect conductive polycrystalline silicon floor 202 and conductive substrate layer 101
Metal level 4014, and connect two parts originally geometry and disconnect the conductive polycrystalline silicon floor 202 of mutually insulated
Metal level 4013.Can utilize that these metal-layer structures realize between different conductive layers further is electric
Connect, cabling intersects, electric shield function, so that the sensitivity of silicon capacitor microphone, the linearity, letter
Make an uproar than etc. index be improved.
In above preferred embodiment, it is allowed to for silicon capacitor microphone sensitive structure arrange need additions and deletions or
Amendment some of which step, but described metal level at least two parts originally mutually insulated conductive layer it
Between formed electrical connection, by such lift-off bus connection method, can by existing technological level realization exist
Carry out more flexible electrical traces on sensitive structure to arrange, thus optimize signal of telecommunication transmission path, more to enter one
Step improves the indexs such as the sensitivity of silicon capacitor microphone, the linearity, signal to noise ratio.
The above description of this invention is illustrative and not restrictive, and those skilled in the art understands,
It can be carried out many amendments, changes or equivalence within the spirit and scope that claim limits, but it
Fall within protection scope of the present invention.
Claims (10)
1. the electrical connecting wires structure of a silicon capacitor microphone, including substrate, non-conductive layer and conductive layer, described substrate, non-conductive layer and conductive layer are formed with multiple ledge structure by lift-off technique each other, it is characterized in that, it is attached with multiple metal electrode on the plurality of ledge structure, is electrically connected in order to the formation between the conductive layer of mutually insulated.
The electrical connecting wires structure of silicon capacitor microphone the most according to claim 1, it is characterised in that the ledge structure difference in height of described adhesion metal electrode is less than 10 microns.
The electrical connecting wires structure of silicon capacitor microphone the most according to claim 1, it is characterised in that described conductive is doped monocrystalline silicon or DOPOS doped polycrystalline silicon.
The electrical connecting wires structure of silicon capacitor microphone the most according to claim 1, it is characterised in that described in the metal electrode that is attached on ledge structure for connecting two conductive layers the most different or two the most identical but conductive layer that geometry disconnects.
The electrical connecting wires structure of silicon capacitor microphone the most according to claim 1, it is characterised in that be filled with sacrificial layer material in the described non-conductive layer being staggered between different conductive layers, and the described sacrificial layer material of part is removed after completing lift-off technique.
The electrical connecting wires structure of silicon capacitor microphone the most according to claim 5, it is characterized in that, mobility is possessed between the conductive layer that part is not adhered to by described metal electrode, but in the junction with metal electrode without relative motion between two conductive layers adhered to by metal electrode.
7. the electrical connecting wires method of a silicon capacitor microphone, it is characterised in that comprise the following steps:
S1: one or more groups staggered sacrifice layer and conductive layer on substrate, and utilize the method sheltered and etch that partial sacrificial layer, conductive layer or substrate are exposed in atmosphere, thus between sacrifice layer, conductive layer or substrate, form multiple ledge structure；
S2: growth layer of metal layer covers on the overall structure obtained by step S1, by sheltering, engraving method and lift-off technique, retain the multiple metal electrodes being attached in described metal level on the plurality of ledge structure, remove other parts of described metal level.
The electrical connecting wires method of silicon capacitor microphone the most according to claim 7, it is characterised in that also include step S3: remove unwanted sacrificial layer material.
The electrical connecting wires method of silicon capacitor microphone the most according to claim 7, it is characterised in that the ledge structure difference in height of described adhesion metal electrode is less than 10 microns.
The electrical connecting wires method of silicon capacitor microphone the most according to claim 7, it is characterised in that described conductive is doped monocrystalline silicon or DOPOS doped polycrystalline silicon.
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| CN201510092043.1A CN105992115B (en) | 2015-02-28 | 2015-02-28 | Electrical wiring structure and electrical wiring method of silicon condenser microphone |
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| CN201510092043.1A CN105992115B (en) | 2015-02-28 | 2015-02-28 | Electrical wiring structure and electrical wiring method of silicon condenser microphone |
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| CN101588529A (en) * | 2009-06-30 | 2009-11-25 | 瑞声声学科技(深圳)有限公司 | Silica-based condenser microphone and production method thereof |
| CN102241388A (en) * | 2011-05-18 | 2011-11-16 | 中国科学院上海微***与信息技术研究所 | MEMS (micro electro mechanical system) wafer-level three-dimensional mixing integration packaging structure and method |
| CN102522136A (en) * | 2011-12-23 | 2012-06-27 | 南京航空航天大学 | Epitaxial silicon-based PIN node micro isotope battery and preparation method thereof |
| CN103456628A (en) * | 2012-05-29 | 2013-12-18 | 上海华虹Nec电子有限公司 | Manufacturing method of germanium-silicon heterojunction bipolar triode device |
| US20140159324A1 (en) * | 2012-12-10 | 2014-06-12 | LuxVue Technology Corporation | Compliant micro device transfer head array with metal electrodes |
| CN204598314U (en) * | 2015-02-28 | 2015-08-26 | 北京卓锐微技术有限公司 | A kind of electrical connecting wires structure of silicon capacitor microphone |
-
2015
- 2015-02-28 CN CN201510092043.1A patent/CN105992115B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101588529A (en) * | 2009-06-30 | 2009-11-25 | 瑞声声学科技(深圳)有限公司 | Silica-based condenser microphone and production method thereof |
| CN102241388A (en) * | 2011-05-18 | 2011-11-16 | 中国科学院上海微***与信息技术研究所 | MEMS (micro electro mechanical system) wafer-level three-dimensional mixing integration packaging structure and method |
| CN102522136A (en) * | 2011-12-23 | 2012-06-27 | 南京航空航天大学 | Epitaxial silicon-based PIN node micro isotope battery and preparation method thereof |
| CN103456628A (en) * | 2012-05-29 | 2013-12-18 | 上海华虹Nec电子有限公司 | Manufacturing method of germanium-silicon heterojunction bipolar triode device |
| US20140159324A1 (en) * | 2012-12-10 | 2014-06-12 | LuxVue Technology Corporation | Compliant micro device transfer head array with metal electrodes |
| CN204598314U (en) * | 2015-02-28 | 2015-08-26 | 北京卓锐微技术有限公司 | A kind of electrical connecting wires structure of silicon capacitor microphone |
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Effective date of registration: 20180717 Address after: 261206 Fengshan Road, Fangzi District, Weifang, Shandong Province, No. 68 Applicant after: Shandong Gettop Acoustic Co.,Ltd. Address before: 100191 Beijing Haidian District Zhichun Road 23 quantum Ginza 1002 room Applicant before: Beijing Acuti Microsystems Co., Ltd. |
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