CN103561376B - MEMS microphone and manufacture method thereof - Google Patents
MEMS microphone and manufacture method thereof Download PDFInfo
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- CN103561376B CN103561376B CN201310482886.3A CN201310482886A CN103561376B CN 103561376 B CN103561376 B CN 103561376B CN 201310482886 A CN201310482886 A CN 201310482886A CN 103561376 B CN103561376 B CN 103561376B
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Abstract
The present invention provides the manufacture method of a kind of MEMS microphone, described making at the first pedestal has backboard and the back board module of backboard insulating barrier, and penetrate described backboard and the acoustic holes of described backboard insulating barrier in the formation of described back board module, and at the marginal area formation air-vent of described backboard insulating barrier；Make the vibrating diaphragm assembly with vibrating diaphragm at the second pedestal, and form the operatic tunes at described vibrating diaphragm assembly；Described vibrating diaphragm assembly is bonded to described back board module, so that described vibrating diaphragm is oppositely arranged with described backboard, described acoustic holes is connected with the described operatic tunes and described air-vent is connected with described acoustic holes by the described operatic tunes.The present invention also provides for a kind of MEMS microphone using above-mentioned manufacture method to be made.
Description
Technical field
The present invention relates to microphone techniques, especially, relate to a kind of MEMS (Micro-Electro-Mechanic System, MEMS) mike and the manufacture method of described MEMS microphone.
Background technology
Along with the development of wireless telecommunications, the speech quality of mobile phone is required more and more higher by user, and mike directly affects the speech quality of mobile phone as the voice pick device of mobile phone, the quality of its design.
Current is MEMS microphone at the widely used mike of mobile phone, a kind of MEMS microphone related to the present invention includes vibrating diaphragm and backboard, the two constitutes MEMS sound sensing capacitance, and MEMS sound sensing capacitance is connected to process chip by connection dish further and carries out signal processing to be exported by sound transducing signal to process chip.The vibrating diaphragm of above-mentioned MEMS microphone and backboard are at same silicon pedestal and to utilize semiconductor fabrication process to be made, and also include forming the processing steps such as the operatic tunes, back of the body chamber, acoustic holes, air-vent and connection dish in manufacturing process.
Owing to each manufacturing process steps of MEMS microphone is to make at same silicon pedestal to be formed, it is therefore necessary to can carry out next processing step after previous processing step completes, the entirety causing MEMS microphone is manufactured inefficient by this.
Summary of the invention
For solving above-mentioned technical problem, the present invention provides a kind of can improve the manufacture method that MEMS microphone entirety manufactures the MEMS microphone of efficiency；Further, the present invention furthermore provides a kind of MEMS microphone using above-mentioned manufacture method manufacture to obtain.
The manufacture method of the MEMS microphone that the present invention provides, including: make at the first pedestal and there is backboard and the back board module of backboard insulating barrier, and penetrate described backboard and the acoustic holes of described backboard insulating barrier in the formation of described back board module, and at the marginal area formation air-vent of described backboard insulating barrier；Make the vibrating diaphragm assembly with vibrating diaphragm at the second pedestal, and form the operatic tunes at described vibrating diaphragm assembly；Described vibrating diaphragm assembly is bonded to described back board module, so that described vibrating diaphragm is oppositely arranged with described backboard, described acoustic holes is connected with the described operatic tunes and described air-vent is connected with described acoustic holes by the described operatic tunes.
In a kind of preferred embodiment of the manufacture method of the MEMS microphone of present invention offer, described making at the first pedestal has backboard and the back board module of backboard insulating barrier, and penetrate described backboard and the acoustic holes of described backboard insulating barrier in the formation of described back board module, and described backboard insulating barrier marginal area formed air-vent include: the first pedestal is provided, it includes the first Semiconductor substrate, the first insulating barrier and backsheet layer, and the intermediate host region of wherein said backsheet layer is as described backboard；Make backboard insulating barrier on described backsheet layer surface, and make insulating protective layer in the bottom surface of described first Semiconductor substrate；Marginal area at described backboard insulating barrier forms air-vent, and described air-vent extends to the side of described back board module；
Intermediate host region etch at described backboard insulating barrier and described backsheet layer goes out multiple acoustic holes, and the plurality of acoustic holes penetrates described backboard insulating barrier and described backsheet layer, and described backboard insulating barrier is formed multiple antiseized projections by the segmentation of the plurality of acoustic holes.
In a kind of preferred embodiment of the manufacture method of the MEMS microphone of present invention offer, the described vibrating diaphragm assembly in the second pedestal making with vibrating diaphragm, and include at the described vibrating diaphragm assembly formation operatic tunes: providing the second pedestal, it includes the second Semiconductor substrate, the second insulating barrier and vibrating diaphragm layer；Make vibrating diaphragm insulating barrier at the described film surface that shakes, and make insulating protective layer in the bottom surface of described second Semiconductor substrate；By the intermediate host region of described vibrating diaphragm insulating barrier and described vibrating diaphragm layer is performed etching process, formed and penetrate described vibrating diaphragm insulating barrier and downwardly extend from the described film surface that shakes but do not penetrate the operatic tunes of described vibrating diaphragm layer, wherein, the intermediate host region that described vibrating diaphragm layer is not penetrated by the described operatic tunes forms described vibrating diaphragm, and the thickness of described vibrating diaphragm is less than the marginal area of described vibrating diaphragm layer.
In a kind of preferred embodiment of the manufacture method of the MEMS microphone provided in the present invention, described described vibrating diaphragm assembly is bonded to described back board module includes: described vibrating diaphragm assembly is overturn；Described vibrating diaphragm assembly is directed at described back board module；By bonding technology, the vibrating diaphragm insulating barrier of described vibrating diaphragm assembly is bonded to the backboard insulating barrier of described back board module.
In a kind of preferred embodiment of the manufacture method of the MEMS microphone of present invention offer, also include: the insulating protective layer of described vibrating diaphragm assembly is etched away completely, and the second Semiconductor substrate of described vibrating diaphragm assembly is carried out thinning process；In described vibrating diaphragm assembly, the region etch corresponding with described vibrating diaphragm goes out ante-chamber, wherein said ante-chamber penetrates described second Semiconductor substrate and described second insulating barrier and extends to described vibrating diaphragm, and described ante-chamber and the described operatic tunes lay respectively at two opposite sides of described vibrating diaphragm；Region etch corresponding with described backboard in described back board module goes out to carry on the back chamber; wherein said back of the body chamber penetrates the insulating protective layer of described back board module, described first Semiconductor substrate and described first insulating barrier and extends to the bottom surface of described backboard, and described back of the body chamber is connected with described acoustic holes.
In a kind of preferred embodiment of the manufacture method of the MEMS microphone of present invention offer, also include: make vibrating diaphragm connecting hole and backboard connecting hole, wherein said vibrating diaphragm connecting hole extends to described vibrating diaphragm layer from described second semiconductor substrate surface, and described backboard connecting hole extends to described backsheet layer from described second semiconductor substrate surface；Backboard connection dish and vibrating diaphragm connection dish is formed respectively in the bottom surface of the bottom surface of described backboard connecting hole and described vibrating diaphragm connecting hole；Wherein, described making vibrating diaphragm connecting hole and backboard connecting hole include: during forming described air-vent, are positioned at the part of described back board module by forming backboard connecting hole at described backboard insulating barrier with an etching technics；During forming the operatic tunes, it is positioned at the Part I of described vibrating diaphragm assembly by forming described backboard connecting hole with an etching technics at described vibrating diaphragm insulating barrier and described vibrating diaphragm layer；Etching during described ante-chamber, by forming vibrating diaphragm connecting hole and described backboard connecting hole is positioned at the Part II of described vibrating diaphragm assembly with etching technics in described second Semiconductor substrate and the second insulating barrier.
The MEMS microphone that the present invention provides, including the back board module being mutually bonded and vibrating diaphragm assembly；Wherein, described back board module includes backboard and backboard insulating barrier, and described back board module is formed and penetrates described backboard and the acoustic holes of described backboard insulating barrier, and the marginal area of described backboard insulating barrier is formed with air-vent；Described vibrating diaphragm assembly includes the vibrating diaphragm being oppositely arranged with the backboard of described back board module, and described vibrating diaphragm assembly is formed with the operatic tunes, and the described operatic tunes is connected with described acoustic holes, and described air-vent is connected with described acoustic holes by the described operatic tunes.
In a kind of preferred embodiment of the MEMS microphone of present invention offer, described back board module also includes the first Semiconductor substrate and the first insulating barrier, described first insulating barrier is arranged on described first semiconductor substrate surface, and described first surface of insulating layer is provided with backsheet layer, the intermediate host region of described backsheet layer is as described backboard；Described backboard insulating barrier is arranged on described back plate surface, and described backboard insulating barrier is formed multiple antiseized projections by the segmentation of the plurality of acoustic holes.
In a kind of preferred embodiment of the MEMS microphone of present invention offer, described vibrating diaphragm assembly also includes the second Semiconductor substrate and described second insulating barrier, described second insulating barrier is arranged on described second semiconductor substrate surface, and described second surface of insulating layer is provided with vibrating diaphragm layer；The intermediate host region of described vibrating diaphragm layer is as described vibrating diaphragm, and the thickness of described vibrating diaphragm is less than the marginal area of described vibrating diaphragm layer；The marginal area surface of described vibrating diaphragm layer is additionally provided with vibrating diaphragm insulating barrier, and described vibrating diaphragm insulating barrier and described backboard insulating barrier contact with each other and synthesize one；The described operatic tunes penetrates described vibrating diaphragm insulating barrier and extends to described diaphragm surface.
In a kind of preferred embodiment of the MEMS microphone of present invention offer, described vibrating diaphragm assembly also includes the ante-chamber corresponding with described vibrating diaphragm, described ante-chamber and the described operatic tunes lay respectively at two opposite sides of described vibrating diaphragm, and described ante-chamber penetrates described second Semiconductor substrate and described second insulating barrier and extends to described vibrating diaphragm；
Described back board module also includes the back of the body chamber corresponding with described backboard; described back of the body chamber penetrates the insulating protective layer of described back board module, described first Semiconductor substrate and described first insulating barrier and extends to the bottom surface of described backboard, and described back of the body chamber is connected with described acoustic holes.
The MEMS microphone of present invention offer and manufacture method thereof, owing to described back board module and described vibrating diaphragm assembly are to be made at different pedestals, the making of the most described back board module and described vibrating diaphragm assembly can perform simultaneously, thus can be effectively improved the overall of MEMS microphone and manufacture efficiency；And, back board module or problem vibrating diaphragm assembly if gone wrong in the fabrication process, other back board modules or vibrating diaphragm assembly can be used before being bonded to come replacement problem back board module or problem vibrating diaphragm assembly, thus improve the overall fine ratio of product of described MEMS microphone.Further, described air-vent is formed at the marginal area of described backboard insulating barrier, with the air pressure of vibrating diaphragm both sides described in active balance, can effectively reduce the stress of described vibrating diaphragm, it is ensured that described MEMS microphone has high sensitivity characteristic；It addition, described vibrating diaphragm can not offer acoustic holes, such that it is able to be effectively improved the sound pressure level of described vibrating diaphragm.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, in describing embodiment below, the required accompanying drawing used is briefly described, apparently, accompanying drawing in describing below is only some embodiments of the present invention, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings, wherein:
Fig. 1 is the structural representation of a kind of embodiment of MEMS microphone that the manufacture method of MEMS microphone using the present invention to provide is made；
Fig. 2 is the flow chart of a kind of embodiment of manufacture method of the MEMS microphone that the present invention provides；
Fig. 3 .1～3.4 be the MEMS microphone shown in Fig. 2 manufacture method in make the process schematic representation of back board module；
Fig. 4 .1～4.3 be the MEMS microphone shown in Fig. 2 manufacture method in make vibrating diaphragm assembly process schematic representation；
Fig. 5 be the MEMS microphone shown in Fig. 2 manufacture method in vibrating diaphragm assembly is carried out with back board module the process schematic representation that is bonded；
Fig. 6 be the MEMS microphone shown in Fig. 2 manufacture method in form ante-chamber and the process schematic representation of connecting hole；
Fig. 7 be the MEMS microphone shown in Fig. 2 manufacture method in formed the back of the body chamber process schematic representation；
Fig. 8 be the MEMS microphone shown in Fig. 2 manufacture method in formed connection dish process schematic representation.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, all other embodiments that those of ordinary skill in the art are obtained under not making creative work premise, broadly fall into the scope of protection of the invention.
The manufacture method of the MEMS microphone that the present invention provides is by making back board module and vibrating diaphragm assembly respectively at two different pedestals, then pass through MEMS bonding technology described back board module and described vibrating diaphragm assembly to be bonded, hereafter above-mentioned back board module and vibrating diaphragm assembly be bonded the mike process component formed on the basis of form cavity, cavity and carry out other subsequent technique process, thus obtain MEMS microphone.
Refer to Fig. 1, the structural representation of a kind of embodiment of MEMS microphone that the manufacture method of the MEMS microphone that the employing present invention provides is made.Described MEMS microphone 100 includes back board module 10 and vibrating diaphragm assembly 20, and wherein, described vibrating diaphragm assembly 20 is fixed on described back board module 10 surface by bonding technology.
Described back board module 10 can be formed at a SOI (Silicon on Insulator, the silicon on insulator) pedestal, and it includes the first Semiconductor substrate the 110, first insulating barrier 120 and backsheet layer 130.Described first Semiconductor substrate 110 can be silicon substrate, and described backsheet layer 130 can be polysilicon layer or the monocrystalline silicon layer of doping conductive material, and described first insulating barrier 120 can be oxide layer, such as silicon dioxide layer.Further, described first insulating barrier 120 and described backsheet layer 130 can be sequentially arranged described first Semiconductor substrate 110 surface, thus form soi structure, and the intermediate body portion of wherein said backsheet layer 130 can be as the backboard 180 of described MEMS microphone 100.
Described backsheet layer 130 surface is also provided with backboard insulating barrier 140, and described backboard insulating barrier 140 is equally oxide layer, such as silicon dioxide layer.Described backboard insulating barrier 140 and described backsheet layer 130 can form multiple acoustic holes 150 by etching processing in described backboard 180 region, and described acoustic holes 150 can penetrate described backboard insulating barrier 140 and described backsheet layer 130 simultaneously.Described backboard insulating barrier 140 is split the multiple projections 141 of formation in described backboard 180 region by the plurality of acoustic holes 150, described projection 141 can be used for preventing the vibrating diaphragm 280 of described vibrating diaphragm assembly 20 from bonding to described backboard 180 when vibrating and causing short circuit as antiseized projection.It addition, the marginal area of described backboard insulating barrier 140 can form air-vent 151 by etching processing.Described air-vent 151 can be connected with described acoustic holes 150, and described air-vent 151 extends to the side of described back board module 10.
It addition, the bottom surface of described first Semiconductor substrate 110 is also provided with insulating protective layer 170, described insulating protective layer 170 is equally oxide layer, such as silicon dioxide layer.Described insulating protective layer 170, described first Semiconductor substrate 110 and described first insulating barrier 120 can form back of the body chamber 160 by etching processing in described backboard 180 region; described back of the body chamber 160 penetrates described insulating protective layer 170, described first Semiconductor substrate 110 and described first insulating barrier 120 and extends to the bottom surface of described backboard 180, and is connected with the plurality of acoustic holes 150.
Described vibrating diaphragm assembly 20 can be formed at the 2nd SOI pedestal, and it includes the second Semiconductor substrate the 210, second insulating barrier 220 and vibrating diaphragm layer 230.Similar with described back board module 10, described second Semiconductor substrate 210 is equally silicon substrate, and described vibrating diaphragm layer 230 can be polysilicon layer or the monocrystalline silicon layer of doping conductive material, and described second insulating barrier 220 can be oxide layer, such as silicon dioxide layer.Further, described second insulating barrier 220 and described vibrating diaphragm layer 230 can be sequentially arranged described second Semiconductor substrate 110 surface, thus form another soi structure.Wherein, the intermediate body portion (i.e. corresponding with described backboard 180 part) of described vibrating diaphragm layer 230 can as vibrating diaphragm 280, and, the thickness of described vibrating diaphragm 280 is less than the marginal area of described vibrating diaphragm layer 230.
Described vibrating diaphragm layer 230 surface is also provided with vibrating diaphragm insulating barrier 240, and described vibrating diaphragm insulating barrier 240 is equally oxide layer, such as silicon dioxide layer.When described vibrating diaphragm assembly 20 is bonded to described back board module 10, described vibrating diaphragm assembly 20 can overturn and make described vibrating diaphragm insulating barrier 240 be positioned at bottom, and after bonding, described vibrating diaphragm insulating barrier 240 contacts with each other with the backboard insulating barrier 140 of described back board module 10 and synthesizes one.
Described vibrating diaphragm insulating barrier 240 and described vibrating diaphragm layer 230 can form the operatic tunes 250 by etching processing in described vibrating diaphragm 280 region, and the described operatic tunes 250 penetrates described vibrating diaphragm insulating barrier 240 and extends to described vibrating diaphragm 280.The described operatic tunes 250 can be connected with described air-vent 151, and so that described air-vent 151 can be connected with described acoustic holes 150 by the described operatic tunes 250.In the present embodiment, owing to described air-vent 151 is formed at the marginal area of described backboard insulating barrier 140, with the air pressure of vibrating diaphragm described in active balance 280 both sides, can effectively reduce the stress of described vibrating diaphragm 280, it is ensured that described MEMS microphone 100 has high sensitivity characteristic；Further, based on said structure, described vibrating diaphragm 280 can not offer acoustic holes, such that it is able to be effectively improved the sound pressure level of described vibrating diaphragm 280.Additionally, described second Semiconductor substrate 210 and described second insulating barrier 220 can also form ante-chamber 260 by etching processing in described vibrating diaphragm 280 region, and described ante-chamber 260 penetrates described second Semiconductor substrate 210 and described first insulating barrier 220 and extends to described vibrating diaphragm 280.
After described vibrating diaphragm assembly 20 overturns and is mutually bonded with described back board module 10, described backboard 180 is relative with described vibrating diaphragm 280, and the described operatic tunes 250 is positioned there between, thus constitute MEMS sound sensing capacitance, signal processing is carried out for the phonoreception induction signal that described MEMS sound sensing capacitance produces being transferred to process chip when described MEMS microphone 100 works, the surface of the marginal area of described backsheet layer 130 and described vibrating diaphragm layer 230 can also be respectively arranged with backboard connection dish 190 and vibrating diaphragm connection dish 290, described backboard connection dish 190 and described vibrating diaphragm connection dish 290 can be separately positioned on the not homonymy of described vibrating diaphragm 280 and described backboard 180.Specifically, described vibrating diaphragm connection dish 290 can be arranged on the side at described air-vent 151 place, and described backboard connection dish 190 can be arranged on the side relative with described air-vent 151.
And, the region at described backboard connection dish 190 and described vibrating diaphragm connection dish 290 place offers backboard connecting hole 191 and vibrating diaphragm connecting hole 291 respectively, to be exposed on the external naked to described backboard connection dish 190 and described vibrating diaphragm connection dish 290 so that it is electrically connected with described process chip.Wherein, described backboard connecting hole 191 can penetrate described second Semiconductor substrate 210, described second insulating barrier 220, described vibrating diaphragm layer 230, described vibrating diaphragm insulating barrier 240 and described backboard insulating barrier 140 and extend to described backsheet layer 130 surface, and described vibrating diaphragm connecting hole 291 can penetrate described second Semiconductor substrate 210 and described second insulating barrier 220 and extend to described vibrating diaphragm layer 230 surface.
Referring to Fig. 2, the flow chart of a kind of embodiment of manufacture method of its MEMS microphone provided for the present invention, the manufacture method of described MEMS microphone can be used to the MEMS microphone 100 made shown in Fig. 1, and it can specifically include following steps.
Step S1, makes the back board module 10 with backboard 180, and forms acoustic holes 150 and air-vent 151 at described back board module 10 at the first pedestal；
Specifically, described step S1 can include following sub-step:
S11, it is provided that the first pedestal, it includes the first Semiconductor substrate the 110, first insulating barrier 120 and backsheet layer 130, as shown in Fig. 3 .1；
Described first Semiconductor substrate 110 can be silicon substrate, described first insulating barrier 120 and described backsheet layer 130 are respectively oxide layer and the polysilicon layer of doping conductive material or monocrystalline silicon layer, and the two is sequentially arranged described first Semiconductor substrate 110 surface, thus form first pedestal with soi structure.
S12, makes backboard insulating barrier 140, and makes insulating protective layer 170 in described first Semiconductor substrate 110 bottom surface, as shown in Figure 3 .2 on described backsheet layer 130 surface；
Described backboard insulating barrier 140 and described insulating protective layer 170 can be oxide layer; specifically; carry out oxidation processes, it is possible to achieve form described backboard insulating barrier 140 and described insulating protective layer 170 respectively in the bottom surface on the surface of described backsheet layer 130 and described first Semiconductor substrate 110 by two surfaces relative to described back board module 10 simultaneously.
S13, the marginal area at described backboard insulating barrier 140 forms air-vent 151, and described air-vent 151 extends to the side of described back board module 10, as shown in Fig. 3 .3；
Specifically, by the marginal area of described backboard insulating barrier 140 is performed etching process, the air-vent 151 extending to described back board module 10 side can be formed；Alternatively, formed during described air-vent 151, be positioned at part 191a of described back board module 10 by backboard connecting hole 191 can be formed at the backboard insulating barrier 140 of the relative side of described air-vent 151 with etching technics.
S14, the intermediate host region etch at described backboard insulating barrier 140 and described backsheet layer 130 goes out multiple acoustic holes 150, and the intermediate host region of described backsheet layer 130 is as described backboard 180, as shown in Fig. 3 .4；
Specifically, by described etching processing, the plurality of acoustic holes 150 can form the intermediate host region of described backboard insulating barrier 140 and described backsheet layer 130 in a distributed manner, and wherein said acoustic holes 150 penetrates described backboard insulating barrier 140 and described backsheet layer 130；And, described backboard insulating barrier 140 forms multiple antiseized projection 141 in described intermediate host region due to the segmentation effect of the plurality of acoustic holes 150, and the part that described backsheet layer 130 is positioned at described intermediate host region can be as described backboard 180, described backboard 180 is covered by described antiseized projection 141.
Step S2, makes the vibrating diaphragm assembly 20 with vibrating diaphragm 280, and forms the operatic tunes 250 at described vibrating diaphragm assembly 20 at the second pedestal；
Specifically, described step S2 can include following sub-step:
S21, it is provided that the second pedestal, it includes the second Semiconductor substrate the 210, second insulating barrier 220 and vibrating diaphragm layer 230, as shown in Fig. 4 .1；
Described second Semiconductor substrate 210 can be silicon substrate, described second insulating barrier 220 and described vibrating diaphragm layer 230 are respectively oxide layer and the polysilicon layer of doping conductive material or monocrystalline silicon layer, and the two is sequentially arranged described second Semiconductor substrate 210 surface, thus form second pedestal with soi structure.
S22, makes vibrating diaphragm insulating barrier 240, and makes insulating protective layer 270, as shown in Fig. 4 .2 in described second Semiconductor substrate 210 bottom surface on described vibrating diaphragm layer 230 surface；
Described vibrating diaphragm insulating barrier 240 and described insulating protective layer 270 can be oxide layer; specifically; carry out oxidation processes, it is possible to achieve form described vibrating diaphragm insulating barrier 140 and described insulating protective layer 270 respectively in the bottom surface on the surface of described vibrating diaphragm layer 230 and described second Semiconductor substrate 210 by two surfaces relative to described second pedestal simultaneously.
S23, the intermediate host region etch at described vibrating diaphragm insulating barrier 240 and described vibrating diaphragm layer 230 goes out the operatic tunes 250, and forms described vibrating diaphragm 280, as shown in Fig. 4 .3；
Specifically, process is performed etching by the intermediate host region corresponding with described backboard 180 in described vibrating diaphragm insulating barrier 240 and described vibrating diaphragm layer 230, can be formed and penetrate described vibrating diaphragm insulating barrier 240 and downwardly extend from described vibrating diaphragm layer 230 surface but do not penetrate the operatic tunes 250 of described vibrating diaphragm layer 230, further, the intermediate host region not penetrated by the described operatic tunes 250 at described vibrating diaphragm layer 230 can form the less vibrating diaphragm of thickness 280.
Alternatively, during forming the operatic tunes 250, it is positioned at the Part I 191b of described vibrating diaphragm assembly 20 by described backboard connecting hole 191 can be formed at the marginal area of described vibrating diaphragm insulating barrier 240 and described vibrating diaphragm layer 230 with an etching technics, and the etch rate of this part is slightly above the etch rate of the described operatic tunes 250, thus this part 191b of described backboard connecting hole 191 penetrates described vibrating diaphragm insulating barrier 240 and described vibrating diaphragm layer 230 when ensureing to have etched simultaneously, and the described operatic tunes 250 penetrates described vibrating diaphragm insulating barrier 240 and does not penetrates described vibrating diaphragm layer 230.
Step S3, is directed at described vibrating diaphragm assembly 20 and is bonded to described back board module 10, so that described vibrating diaphragm 280 is oppositely arranged with described backboard 180 and described acoustic holes 150 and the described operatic tunes 250 are connected；
As it is shown in figure 5, specifically, described step S3 can include following sub-step:
S31, overturns described vibrating diaphragm assembly 20, and after upset, described vibrating diaphragm insulating barrier 240 is positioned at bottom and the described operatic tunes 250 is opening down；
S32, is directed at described vibrating diaphragm assembly 20 with described back board module 10, so that described backboard 180 is relative with described vibrating diaphragm 280；
Specifically, vibrating diaphragm assembly 20 after described upset can be moved to above described back board module 10, and pass through Alignment Process, the backboard 180 making described back board module 10 is covered by the vibrating diaphragm 280 of described vibrating diaphragm assembly 20, and the described operatic tunes 250 is located exactly between described vibrating diaphragm 180 and described backboard 280, and it is connected with described acoustic holes 150；On the other hand, described Alignment Process can also be further such that described backboard connecting hole 191 be positioned at the Part I 191b of described vibrating diaphragm assembly 20 is narrowly focused towards described backboard connecting hole 191 and is positioned at part 191a of described back board module 10.Further, described Alignment Process further such that described air-vent 151 is connected with the described operatic tunes 250 by the edge of described backboard insulating barrier 140, and can also be connected with described acoustic holes 150 by the described operatic tunes 250 further.
S33, is bonded to the backboard insulating barrier 140 of described back board module 10 by bonding technology by the vibrating diaphragm insulating barrier 240 of described vibrating diaphragm assembly 20；
After bonding, described vibrating diaphragm insulating barrier 240 synthesizes one with described backboard insulating barrier 140, so that described back board module 10 and described vibrating diaphragm assembly 20 are synthesized into a mike process component.
Step S4, forms ante-chamber 260, vibrating diaphragm connecting hole 291 and backboard connecting hole 191 at described vibrating diaphragm assembly 20；
As shown in Figure 6, first, by etching technics, the insulating protective layer 270 of described vibrating diaphragm assembly 20 is etched away completely, and by the second Semiconductor substrate 210 partial etching of described vibrating diaphragm assembly 20, thus the thinning realizing described vibrating diaphragm assembly 20 processes；
Secondly, ante-chamber 260 is etched in the intermediate host region (i.e. corresponding with described vibrating diaphragm 280 region) of described vibrating diaphragm assembly 20 by etching technics, described ante-chamber 260 can penetrate described second Semiconductor substrate 210 and described second insulating barrier 220, and extends to described vibrating diaphragm 280.Wherein, described ante-chamber 260 and the described operatic tunes 250 lay respectively at two opposite sides of described vibrating diaphragm 280.
And, during etching described ante-chamber 260, by the second semiconductor layer 210 above described air-vent 151 and the second insulating barrier 220 forming vibrating diaphragm connecting hole 291 with etching technics, described vibrating diaphragm connecting hole 291 penetrates described second Semiconductor substrate 210 and described second insulating barrier 220 equally and extends to the vibrating diaphragm layer 230 above described air-vent 151.And, it is positioned at the Part II of described vibrating diaphragm assembly 20 described backboard connecting hole 191 can also be formed at the opposite side of described second semiconductor layer 210 and the second insulating barrier 220 with an etching technics, and described Part II just extends to be positioned at described backboard connecting hole 191 the Part I 191b of described vibrating diaphragm assembly 20 and is positioned at part 191a of described back board module 10 and is connected, form the backboard connecting hole 191 that opening direction is identical with described ante-chamber 260.
Step S5, forms back of the body chamber 160 at described back board module 10；
As shown in Figure 7; specifically; back of the body chamber 160 is etched in the intermediate host region (i.e. corresponding with described backboard 180 region) of described back board module 10 by etching technics; described back of the body chamber 160 penetrates described insulating protective layer 170, described first Semiconductor substrate 110 and described first insulating barrier 120 and extends to the bottom surface of described backboard 180, and is connected with the plurality of acoustic holes 150.
Step S6, forms backboard connection dish 190 and vibrating diaphragm connection dish 290 respectively at described vibrating diaphragm connecting hole 291 and described backboard connecting hole 191.
As shown in Figure 8, specifically, processed by specific region surface metalation, can be in described vibrating diaphragm connecting hole 291 and the bottom surface of described backboard connecting hole 191, the most described vibrating diaphragm layer 230 surface and described backsheet layer 130 surface form metal pad respectively, described metal pad can be respectively as described vibrating diaphragm connection dish 290 and described backboard connection dish 190, and described vibrating diaphragm connection dish 290 is electrically connected with described vibrating diaphragm 280 by the marginal area of described vibrating diaphragm layer 230, and described backboard connection dish 190 is electrically connected with described backboard 180 by the marginal area of described backsheet layer 130.
Thus, by above-mentioned manufacture method, just can form MEMS microphone 100 as shown in Figure 1, not have strict ordering relation in each step of above-mentioned manufacture method, the back board module 10 of the most described step S1 and the vibrating diaphragm assembly 20 of step S2 can be made at different SOI pedestals simultaneously；And for example, the ante-chamber 260 of described step S4 and the back of the body chamber 160 of described step S5 can also etch out by two-sided etching technics simultaneously.
In the manufacture method of the MEMS microphone of present invention offer, owing to described back board module 10 and described vibrating diaphragm assembly 20 are to be made at different pedestals, the making of the most described back board module 10 and described vibrating diaphragm assembly 20 can perform simultaneously, thus can be effectively improved the overall of MEMS microphone and manufacture efficiency；Further, if going wrong back board module or problem vibrating diaphragm assembly in the fabrication process, other back board modules or vibrating diaphragm assembly can be used to come replacement problem back board module or problem vibrating diaphragm assembly, thus improve the overall fine ratio of product of described MEMS microphone.
The foregoing is only embodiments of the invention; not thereby the scope of the claims of the present invention is limited; every equivalent structure utilizing description of the invention and accompanying drawing content to be made or equivalence flow process conversion; or directly or indirectly it is used in other relevant technical field, the most in like manner it is included in the scope of patent protection of the present invention.
Claims (4)
1. the manufacture method of a MEMS microphone, it is characterised in that including:
Make at the first pedestal and there is backboard and the back board module of backboard insulating barrier, and at described backboard
Assembly is formed and penetrates described backboard and the acoustic holes of described backboard insulating barrier, and insulate at described backboard
The marginal area of layer forms the step of air-vent, and this step includes: provide the first pedestal, and described the
One pedestal includes the first Semiconductor substrate, the first insulating barrier and backsheet layer, wherein said backsheet layer
Intermediate host region is as described backboard；At described backsheet layer surface making backboard insulating barrier, and
The bottom surface of described first Semiconductor substrate makes insulating protective layer；Edge at described backboard insulating barrier
Region forms air-vent, and described air-vent extends to the side of described back board module；At described backboard
The intermediate host region etch of insulating barrier and described backsheet layer goes out multiple acoustic holes, the plurality of acoustics
Hole penetrates described backboard insulating barrier and described backsheet layer, and described backboard insulating barrier is the plurality of
Acoustic holes segmentation forms multiple antiseized projections；
Make the vibrating diaphragm assembly with vibrating diaphragm at the second pedestal, and form the operatic tunes at described vibrating diaphragm assembly
Step, this step includes: provide the second pedestal, described second pedestal include second quasiconductor lining
The end, the second insulating barrier and vibrating diaphragm layer；Vibrating diaphragm insulating barrier is made at the described film surface that shakes, and in institute
The bottom surface stating the second Semiconductor substrate makes insulating protective layer；By to described vibrating diaphragm insulating barrier and institute
State the intermediate host region of vibrating diaphragm layer and perform etching process, formed penetrate described vibrating diaphragm insulating barrier and from
The described film surface that shakes downwardly extends but does not penetrates the operatic tunes of described vibrating diaphragm layer, wherein, described vibrating diaphragm
The intermediate host region that layer is not penetrated by the described operatic tunes forms described vibrating diaphragm, and the thickness of described vibrating diaphragm is little
Marginal area in described vibrating diaphragm layer；
Described vibrating diaphragm assembly is bonded to the step of described back board module, so that described vibrating diaphragm is with described
Backboard is oppositely arranged, and described acoustic holes is connected with the described operatic tunes and described air-vent is by described sound
Chamber is connected with described acoustic holes, and this step includes: overturn by described vibrating diaphragm assembly；By institute
State vibrating diaphragm assembly to be directed at described back board module；By bonding technology by the vibrating diaphragm of described vibrating diaphragm assembly
Insulating barrier is bonded to the backboard insulating barrier of described back board module.
2. the manufacture method of MEMS microphone as claimed in claim 1, it is characterised in that
Also include:
The insulating protective layer of described vibrating diaphragm assembly is etched away completely, and to described vibrating diaphragm assembly
Two Semiconductor substrate carry out thinning process；
In described vibrating diaphragm assembly, the region etch corresponding with described vibrating diaphragm goes out ante-chamber, wherein said
Ante-chamber penetrates described second Semiconductor substrate and described second insulating barrier and extends to described vibrating diaphragm, and
And described ante-chamber and the described operatic tunes lay respectively at two opposite sides of described vibrating diaphragm；
Region etch corresponding with described backboard in described back board module goes out carries on the back chamber, wherein said
Back of the body chamber penetrates the insulating protective layer of described back board module, described first Semiconductor substrate and described first
Insulating barrier also extends to the bottom surface of described backboard, and described back of the body chamber is connected with described acoustic holes.
3. the manufacture method of MEMS microphone as claimed in claim 2, it is characterised in that
Also include:
Making vibrating diaphragm connecting hole and backboard connecting hole, wherein said vibrating diaphragm connecting hole is from described the second half
Conductor substrate surface extends to described vibrating diaphragm layer, and described backboard connecting hole is from described second quasiconductor lining
Basal surface extends to described backsheet layer；
Backboard is formed respectively in the bottom surface of the bottom surface of described backboard connecting hole and described vibrating diaphragm connecting hole
Connection dish and vibrating diaphragm connection dish；
Wherein, described making vibrating diaphragm connecting hole and backboard connecting hole include:
During forming described air-vent, can be at described backboard by a same etching technics
Insulating barrier forms backboard connecting hole and is positioned at the part of described back board module；
During forming the operatic tunes, by a same etching technics in described vibrating diaphragm insulating barrier and institute
State vibrating diaphragm layer to form described backboard connecting hole and be positioned at the Part I of described vibrating diaphragm assembly；
During etching described ante-chamber, by a same etching technics at described second quasiconductor
Substrate and the second insulating barrier form vibrating diaphragm connecting hole and described backboard connecting hole is positioned at described vibrating diaphragm
The Part II of assembly.
4. a MEMS microphone, it is characterised in that include the back board module that is mutually bonded and
Vibrating diaphragm assembly；
Wherein, described back board module include the first Semiconductor substrate, the first insulating barrier, backsheet layer and
Backboard insulating barrier, described first insulating barrier is arranged on described first semiconductor substrate surface, the described back of the body
Flaggy is arranged on described first surface of insulating layer, and described backboard insulating barrier is arranged on described backsheet layer
Surface, the intermediate host region etch of described backboard insulating barrier and described backsheet layer has multiple acoustics
Hole, the plurality of acoustic holes penetrates described backboard insulating barrier and described backsheet layer, and described backboard
Insulating barrier is formed multiple antiseized projections by the segmentation of the plurality of acoustic holes, main in the middle of described backsheet layer
Body region is as backboard, and described back board module also includes the back of the body chamber corresponding with described backboard, described
Back of the body chamber penetrates the first Semiconductor substrate of described back board module and the first insulating barrier and extends to described
The bottom surface of backboard, and described back of the body chamber is connected with the plurality of acoustic holes；
Described vibrating diaphragm assembly includes that the second Semiconductor substrate, the second insulating barrier, vibrating diaphragm layer and vibrating diaphragm are exhausted
Edge layer, described second insulating barrier is arranged on described second semiconductor substrate surface, and described vibrating diaphragm layer sets
Put at described second surface of insulating layer, and described vibrating diaphragm insulating barrier be arranged on described in shake film surface,
The intermediate host region of described vibrating diaphragm layer is as vibrating diaphragm, and the thickness of described vibrating diaphragm is less than described vibrating diaphragm
Layer marginal area, described vibrating diaphragm is oppositely arranged with described backboard, described vibrating diaphragm assembly also include and
The operatic tunes that described vibrating diaphragm is corresponding, the described operatic tunes penetrates described vibrating diaphragm insulating barrier and shakes described in extending to
Film, the described operatic tunes is connected with the plurality of acoustic holes, and described vibrating diaphragm assembly also includes shaking with described
The ante-chamber that film is corresponding, described ante-chamber and the described operatic tunes lay respectively at described vibrating diaphragm two are relative
Side, described ante-chamber penetrates described second Semiconductor substrate and described second insulating barrier and extends to described
Vibrating diaphragm；The marginal area of described backboard insulating barrier is formed and the marginal area of described vibrating diaphragm insulating barrier
The air-vent jointly surrounded, described air-vent extends to the side of described back board module, described ventilative
Hole is connected with the plurality of acoustic holes by the described operatic tunes, the marginal area of described vibrating diaphragm insulating barrier
Contact with each other with the marginal area of described backboard insulating barrier and synthesize one.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310482886.3A CN103561376B (en) | 2013-10-15 | 2013-10-15 | MEMS microphone and manufacture method thereof |
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| CN201310482886.3A CN103561376B (en) | 2013-10-15 | 2013-10-15 | MEMS microphone and manufacture method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104113810A (en) * | 2014-07-18 | 2014-10-22 | 瑞声声学科技(深圳)有限公司 | MEMS microphone and preparation method thereof and electronic device |
| CN105848075B (en) * | 2015-01-15 | 2020-02-11 | 中芯国际集成电路制造(上海)有限公司 | MEMS device preparation method |
| CN104754480B (en) * | 2015-02-09 | 2018-09-11 | 瑞声声学科技(深圳)有限公司 | MEMS microphone and its manufacturing method |
| CN105392089A (en) * | 2015-12-03 | 2016-03-09 | 瑞声声学科技(深圳)有限公司 | Composite layer structure and manufacture method thereof |
| DE102016210008A1 (en) * | 2016-06-07 | 2017-12-07 | Robert Bosch Gmbh | Sensor and / or converter device and method for operating a sensor and / or converter device with at least one bending structure comprising at least one piezoelectric layer |
| KR102322258B1 (en) * | 2017-05-19 | 2021-11-04 | 현대자동차 주식회사 | Microphone and manufacturing method thereof |
| CN216437481U (en) * | 2020-07-06 | 2022-05-03 | 瑞声科技（南京）有限公司 | A vibrating diaphragm and MEMS microphone for MEMS microphone |
| CN112672243A (en) * | 2020-12-29 | 2021-04-16 | 瑞声声学科技(深圳)有限公司 | Microphone and method for manufacturing the same |
| CN113132877B (en) * | 2021-06-17 | 2021-09-21 | 甬矽电子(宁波)股份有限公司 | Microphone packaging structure and preparation method thereof |
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| US9344805B2 (en) * | 2009-11-24 | 2016-05-17 | Nxp B.V. | Micro-electromechanical system microphone |
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| CN101199234A (en) * | 2005-05-16 | 2008-06-11 | 森斯费伯私人有限公司 | Silicon microphone |
| CN101854578A (en) * | 2010-06-01 | 2010-10-06 | 无锡芯感智半导体有限公司 | Miniature microphone manufacturing method based on Si-Si bonding process |
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