CN105986304A - Electrochemical plating apparatus and anode member thereof - Google Patents
Electrochemical plating apparatus and anode member thereof Download PDFInfo
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- CN105986304A CN105986304A CN201510096086.7A CN201510096086A CN105986304A CN 105986304 A CN105986304 A CN 105986304A CN 201510096086 A CN201510096086 A CN 201510096086A CN 105986304 A CN105986304 A CN 105986304A
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- anode
- anolyte
- prolonging
- connecting portion
- thickness control
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- 238000007747 plating Methods 0.000 title abstract description 8
- 230000005518 electrochemistry Effects 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052802 copper Inorganic materials 0.000 abstract description 4
- 239000010949 copper Substances 0.000 abstract description 4
- 230000002596 correlated effect Effects 0.000 abstract 2
- 230000000875 corresponding effect Effects 0.000 abstract 1
- 238000009713 electroplating Methods 0.000 description 31
- 239000000463 material Substances 0.000 description 14
- 239000013078 crystal Substances 0.000 description 13
- 239000003792 electrolyte Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 238000003860 storage Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Electroplating Methods And Accessories (AREA)
Abstract
The present invention relates to an electrochemical plating apparatus and an anode member thereof. The invention discloses an anode component, which can be applied to an electrochemical plating device and comprises: an anode base, an anode chamber, and an extension member. The anode base part is provided with an anolyte input end, the anode chamber is arranged on the anode base part and used for containing anolyte, the anode chamber is provided with a plurality of thickness control areas applied with different biases, the extension member is connected with the anolyte input end, the extension member is provided with a plurality of flow channels corresponding to the thickness control areas, wherein the length of the extension member is positively correlated with the impedance coefficient of the anolyte, and the length of the extension member is negatively correlated with the inner diameters of the flow channels. Therefore, the thickness uniformity of the electroplated copper film layer can be improved.
Description
Technical field
The present invention relates to electroplating of conductive material to the electrochemical plating arts of semiconductor substrate, particularly relate to
A kind of anode component and electrochemistry electroplanting device thereof that can help to produce uniformly-coating thickness profile.
Background technology
Wafer (Wafer) refers to make the silicon wafer base material used by integrated circuit and microelectronic element, and
The technique of integrated circuit and microelectronic element generally comprises doping, electroplates, etches and the step such as light lithography.
The generally size of wafer is the biggest, and on same wafer, producible integrated circuit or microelectronic element are more
Many, and cost can be reduced.
For the making of integrated circuit and microelectronic element, electrochemistry plating (Electrochemical
Plating, ECP) it is an important processing step, mainly in order to form conductive layer on base material,
Such as copper crystal seed layer (Seed layer).But, large scale wafer is to the requirement of material and technology the most more
High, for example, improving crystal column surface film thickness uniformity to improve product fine rate is to need solution at present badly
Problem certainly.
Although existing electroplating device can apply different size of by diverse location on anode component respectively
Voltage, the thickness grown relative to each block of the conductive layer of each position of anode component with control, and
Mode improves the thickness evenness of conductive layer according to this.But, this electroplating device is often when running one section
After between, anode component just has crystal generation (as copper precipitates with the junction of electrolyte water influent pipeline
Crystallization), and this crystal can make anode component that the loop of a conducting is integrally formed, and causes anode
On element, diverse location cannot be independently applied the problem of bias, and the most therefore this electroplating device cannot be carried out
Large-sized zinc coat thickness control.
As it has been described above, need a kind of electrochemistry electroplanting device, it effectively can prevent during electroplating processes
The generation of crystal, to solve existing technical problem.
Summary of the invention
The present invention manufactures the angle of acceptance rate from improving, it is therefore intended that provide one effectively to control
The anode component of the uniformity coefficient of thickness of coating and electrochemistry electroplanting device thereof.
In order to achieve the above object and effect, the present invention uses techniques below means: a kind of anode component,
Being applied to an electrochemistry electroplanting device, this anode component includes: an anode base portion, has an anolyte
Input；One anode chamber, is arranged on this anode base portion, for accommodating an anolyte, this anode chamber
There is multiple THICKNESS CONTROL region being applied in different bias；And, a member for prolonging, it is connected to this
Anolyte input, this member for prolonging has multiple runner corresponding to the plurality of THICKNESS CONTROL region,
Wherein, the length of this member for prolonging is proportionate with the impedance factor of this anolyte, and this member for prolonging
The internal diameter of length and the plurality of runner be negative correlation.
Based on above-mentioned anode component, the present invention separately provides a kind of electrochemistry electroplanting device, including: one
Reaction cavity, is provided with a cathode chamber in it, for accommodating a catholyte；One substrate support member, if
It is placed in the top of this cathode chamber；And, an anode component, it is arranged at the lower section of this cathode chamber, this sun
Pole parts include an anode base portion, an anode chamber and a member for prolonging, and this anode base portion has a sun
Pole liquid input, this anode chamber is arranged on this anode base portion, for accommodating an anolyte, and this sun
Room, pole has multiple THICKNESS CONTROL region being applied in different bias, and this member for prolonging is connected to this anode
Liquid input, and this member for prolonging has multiple runner corresponding to the plurality of THICKNESS CONTROL region, its
In, the length of this member for prolonging is proportionate with the impedance factor of this anolyte, and this member for prolonging
Length is negative correlation with the internal diameter of the plurality of runner.
The beneficial functional of the present invention is: the present invention is through " member for prolonging is connected to this anolyte
Input, this member for prolonging has multiple runner corresponding to the plurality of THICKNESS CONTROL region " and " should
The length of member for prolonging is proportionate with the impedance factor of this anolyte, and the length of this member for prolonging with
The internal diameter of the plurality of runner is negative correlation " design, in electroplating technology, member for prolonging institute can be passed through
The flow path providing ion regulates and controls to put on the electroplating current value of diverse location on anode component, mat
To produce uniform electroplating thickness section over the whole substrate.
Other objects and advantages of the present invention can obtain into one from the technology contents that disclosed herein
The understanding of step.In order to the above-mentioned of the present invention and other objects, features and advantages can be become apparent,
Special embodiment below also coordinates institute's accompanying drawings to be described in detail below.
Accompanying drawing explanation
Fig. 1 is the structural representation of the electrochemistry electroplanting device of the present invention.
Fig. 2 is the top view of the anode component of the present invention.
Fig. 3 is the three-dimensional combination figure of the anode component of the present invention.
Fig. 4 is the three-dimensional exploded view of the anode component of the present invention.
Fig. 5 is the sectional view of the one enforcement aspect of the anode component of the present invention.
Fig. 6 is the sectional view of the another kind enforcement aspect of the anode component of the present invention.
Fig. 7 is the anode component of present invention bias pattern schematic diagram of being applied in time using.
Fig. 8 is existing anode component current path schematic diagram in time using.
Fig. 9 is the anode component of present invention current path schematic diagram in time using.
[the symbol simple declaration of figure]:
3 anode components
30 anode chambers
33 anode base portions
34 member for prolongings
341 bodies
342 first connecting portions
343 first connecting portions
Z1～Z4 THICKNESS CONTROL region
L length
Detailed description of the invention
Refer to Fig. 1, for the structural representation of the electrochemistry electroplanting device of a preferred embodiment of the present invention,
Electrochemistry electroplanting device E includes reaction cavity 1, substrate support member 2 and an anode component 3.
It is provided with a cathode chamber 10 in reaction cavity 1, and cathode chamber 10 can accommodate electrolyte during electroplating
Or catholyte.Anode component 3 is arranged at the lower section of cathode chamber 10 and has an anode chamber 30, and positive
Room, pole 30 can accommodate anolyte during electroplating.
Substrate support member 2 is arranged at the top of cathode chamber 10, for fixing one base material S, such as
Semiconductor crystal wafer or substrate, it should be appreciated by those skilled in the art that semiconductor crystal wafer or substrate can
To be Silicon Wafer or the silicon substrate in arbitrary production of integrated circuits stage.Preferably design is, substrate support
Component 2 has a contact ring 21 (also referred to as cathode loop), and it is positioned near cathode chamber 10 top
Position and can move in vertical direction relative to anode component 3.For further, contact ring
21 are provided with multiple contact plug (not indicating in figure), and it cannot be only used for supporting base material during electroplating
S, also can be used (i.e. as the means of conducting between base material and electroplating power supply) as circuit turn-on.
By and large, electrochemistry electroplanting device E in use time, can using base material S as negative electrode, and
DC current is persistently supplied in anode component 3, to set up electric field in anode component 3 and base by a power supply
Between material S surface, and then facilitating electrochemical reaction, thereby, the metallic on anode was reacting
Cheng Zhonghui is ionized, and the positive metal ion after ionizing can via electrolyte transmission and further in
Base material S surface reduction separates out, and then forms the coat of metal (such as copper metal layer), but the present invention is not
This limit.For example, in other embodiments, by the solid metallic of positive reducing metal ions
Also can be deposited in the groove of base material S.
Furthermore, referring back to Fig. 1, anolyte can be via anolyte circulation line 31 during electroplating
And circulate between anode chamber 30 and anolyte storage tank 32, wherein anolyte circulation line 31
On connect and set an a pump P1 and valve member V1.For further, anolyte can be in the effect of pump P1
The guiding of lower mat anolyte inlet tube 311 and be transported to anode chamber 30, leave the sun of anode chamber 30
Pole liquid can the guiding of mat anolyte outlet pipe 312 and return to anolyte storage tank 32, and anolyte
Temperature and composition can control in anode chamber 30 and adjust.
Catholyte/electrolyte can be via catholyte circulation line 11 at cathode chamber 10 and catholyte storage tank
Circulate between 12, wherein connect on catholyte circulation line 11 and set an a pump P2 and valve member V2.
For further, catholyte/electrolyte can under the effect of pump P2 mat catholyte inlet tube 111
Guiding and be transported to cathode chamber 10, the catholyte/electrolyte leaving cathode chamber 10 can go out by mat catholyte
The guiding of mouthful pipe 112 and return to catholyte storage tank 12, and the temperature of catholyte/electrolyte and group
One-tenth can control in cathode chamber 10 and adjust.In the present embodiment, described pump P1, P2 e.g. follow
Ring pump, and described valve member V1, V2 e.g. medicinal liquid valve, but the present invention does not limits for this.
In the present embodiment, electrochemistry electroplanting device E, in time using, can pass through a processing unit to valve
Part V1, V2 and pump P1, P2 are controlled by respectively, use regulation anolyte and catholyte/electrolyte
Flow and control it and flow to, and then reach the purpose of Automated condtrol.And optimal design is, electricity
Electroless plating device E can pass through processing unit and realizes the following logic that controls: sequential, reaction cavity 1
Pressure and temperature, the temperature of base material S, the position of base material S, put on base material S or anode component 3
Electric current and the operating parameter such as flow velocity of current potential, anolyte and catholyte/electrolyte.Processing unit is such as
It is personal computer, mobile computer, industrial computer, CPU etc., but the present invention is not this
Limit.
Refer to Fig. 2 to Fig. 5, for the anode component of a preferred embodiment of the present invention under different visual angles
Structural representation.Next anode component 3 and the respective structure of member for prolonging 34 will first be introduced
Feature, the most in time connection relationship between the two described in supplementary notes.
First, as in figure 2 it is shown, anode component 3 has an anode base portion 33, it is preferred that anode base
The main body in portion 33 is in the form of annular discs, but is not only restricted to this.Anode base portion 33 has an anolyte input
331, it is provided that input and the guiding flowing of anolyte are used, it is preferred that anolyte input 331 is joined
It is placed in anode base portion 33 side.Furthermore, anode base portion 33 is provided with an anode component array 332,
Each of which anode component 333 can be independently applied bias during electroplating, in other words, and each
Anode component 333 is all considered as independent anode；Or, the plurality of anode component 333 can also
Group is that unit is biased.
In the present embodiment, anode component 333 can be by copper, titanium, platinum, platinized titanium or other metal
Thin electrode element made by/non-metal conductor, and anode component 333 has an anode surface (in figure
Do not indicate), it can be arbitrary shape, such as, triangle, rectangle, square, circle or
Polygon.It should be appreciated by those skilled in the art that the arrangement mode of anode component array 332 can
The shape of the anode surface according to each anode component 333 and adjust, the present invention is not only restricted to this.
Then, as it is shown on figure 3, anode chamber 30 is positioned at above anode base portion 33, in anode chamber 30
Separated out multiple THICKNESS CONTROL region Z1～Z4, and the plurality of THICKNESS CONTROL region Z1～Z4 respectively can be wrapped
Containing at least one anode component 333 or the group that is in series by multiple anode components 333.Thereby,
Electrochemistry electroplanting device E, in time using, can pass through the control of processing unit to the plurality of THICKNESS CONTROL district
Territory Z1～Z4 applies different bias respectively, to compensate the heterogeneity of plating thickness.
In the present embodiment, the plurality of THICKNESS CONTROL region Z1～Z4 is in concentric annular arrays, according to this
Arrangement mode, is conducive to producing uniform film thickness.It should be appreciated by those skilled in the art that this
The arrangement mode of multiple THICKNESS CONTROL region Z1～Z4 is not only restricted to this；For example, in other reality
Executing in example, the plurality of THICKNESS CONTROL region Z1～Z4 also can be in parallel zonal distribution.
Then, as shown in Figures 4 and 5, member for prolonging 34 be connected to anolyte input 331 with
Between anolyte input pipe 311, member for prolonging 34 is designed to prevent precipitated crystal (dendrite)
Generation.Specifically, member for prolonging 34 includes a body 341 and respectively from body 341
The first connecting portion 342 and the second connecting portion 343, wherein body 341 of opposite end elongation moulding
Cylindrically, and it is provided with multiple corresponding to the plurality of THICKNESS CONTROL region Z1～Z4 in body 341
Runner F, and the plurality of runner F be along body 341 length direction extend.First connects
Portion 342 and the second connecting portion 343 are all in square shape, and the first connecting portion 342 is configured to engage anolyte
Input 331, and the second connecting portion 343 is configured to jointed anode liquid input pipe 311.
For further, member for prolonging 34 can be integrally formed at anolyte input 331 (such as Fig. 3
Shown in), or it is positioned anolyte input 331 (as shown in Figure 2) with assembling mode combination,
Such as, can by lock member (such as bolt, nut etc.) and through lockhole by member for prolonging 34 it
First connecting portion 342 is engaged in anolyte input 331.Accordingly, by single anolyte input pipe 311
The anolyte carried can pass through the runner F of member for prolonging 34 and shunts, and then re-supplies sun
Each THICKNESS CONTROL region Z1～Z4 of room, pole 30.
It should be noted that by the flow path of the anolyte attached by the runner F of member for prolonging 34,
Can help the equivalent resistance between Z1～Z4 of THICKNESS CONTROL region, and optimal design is,
Length L of member for prolonging 34 is proportionate with the impedance factor of anolyte, and the length of member for prolonging 34
The internal diameter of degree L and runner F is negative correlation.Reason is, length L of member for prolonging 34 is the longest,
Represent that the bias point in arbitrary THICKNESS CONTROL region is to anode between the bias point in another THICKNESS CONTROL region
The distance of liquid flow path is the longest, then the equivalent resistance between said two bias point is the biggest, instead
As the same.
Refer to Fig. 6, for the structural representation of the anode component of another preferred embodiment of the present invention.Prolong
Long component 34 is not limited to the one piece shown in Fig. 5, in the present embodiment, member for prolonging
34 are formed by multiple extension units 340, and each extension unit 340 includes a body equally
341 with respectively from first connecting portion 342 and second of the opposite end elongation moulding of body 341 even
Meet portion 343, wherein, be designed with multiple corresponding to the plurality of THICKNESS CONTROL district in each body 341
The runner of territory Z1～Z4, the first connecting portion 342 of arbitrary extension unit 340 is configured to engage anode
Liquid input 331 or the second connecting portion 343 of another extension unit 340, anolyte input pipe 311
Then it is arranged in extension unit 340 (the prolongation list that i.e. distance anolyte input 331 is farthest of outermost
Unit) the second connecting portion 343 on.
(experimental example)
As it was previously stated, illustrated main feature and its technology that can reach effect of anode component
Really, next especially exemplified by the Parameter Conditions used by the electroplating technology of semiconductor wafer, member for prolonging is described
The design principle of 34.
Referring to Fig. 7 and Fig. 8, in the anode component 3 shown in Fig. 8, anode chamber 30 has four
THICKNESS CONTROL region Z1～Z4, it is designed to independent biasing during electroplating, and anode base portion
The anolyte input 331 of 33 is not equipped with member for prolonging 34.And in this electroplating technology, as
Shown in Fig. 7, measured by put on THICKNESS CONTROL region Z1Dc bias V1For 10.2VDC, execute
It is added on THICKNESS CONTROL region Z2Dc bias V2For 12.5VDC, put on THICKNESS CONTROL region Z3
Dc bias V3For 28.4VDC, and put on THICKNESS CONTROL region Z4Dc bias V4For
6.51VDC.Thus can extrapolate, the voltage difference between Z3 and Z1 of THICKNESS CONTROL region is 18.2,
Voltage difference between Z3 and Z2 of THICKNESS CONTROL region is 15.9, THICKNESS CONTROL region Z3 and Z4
Between voltage difference be 21.89.
What deserves to be explained is, from inefficacy detection parameters (Fault and Detection Classification,
FDC) analysis result understands, and the generation of precipitated crystal is that electroplating current is excessive caused mostly.Therefore,
Utilize Ohm's law to analyze the control methods of electroplating current further below, and first ask according to following relational expression
Obtain the equivalent resistance between Z1～Z4 of THICKNESS CONTROL region: R=d × C.Wherein, d represents anode
The distance of liquid flow path, and in this electroplating technology, measured THICKNESS CONTROL region Z3 and Z1
Between distance d1 of anolyte flow path be that 22mm is (between Z3 bias point and Z1 bias point
Distance), between Z3 and Z2 of THICKNESS CONTROL region, distance d2 of anolyte flow path is 16.5mm
Sun between (distance between Z3 bias point and Z2 bias point), and THICKNESS CONTROL region Z3 and Z4
Distance d3 of pole liquid flow path is 11mm (distance between Z3 bias point and Z4 bias point).
It addition, C is constant and can be by shown in following relational expression: C=ρ/A, in other words, constant C
In electroplating system, the impedance factor with anolyte is proportionate, and the sectional area of runner F is then in negative
Close.Due to ρ value and the A value of THICKNESS CONTROL region Z1～Z4 in same electroplating system the most identical,
Equivalent resistance between therefore, it can THICKNESS CONTROL region Z3 and Z1 is considered as 22C, by thickness
Equivalent resistance between Z3 and Z2 of control area is considered as 16.5C, and by THICKNESS CONTROL region Z3
And the resistance value between Z4 is considered as 11C.
Can calculate further more than comprehensive, THICKNESS CONTROL region Z3And Z1Between electroplating current
Value I3-1It is 0.831 × 1/C, THICKNESS CONTROL region Z3And Z2Between electroplating current value I3-2It is 0.96
× 1/C, THICKNESS CONTROL region Z3And Z4Between electroplating current value I3-4It is 1.99 × 1/C, and thick
Degree control area Z1～Z4Between ratio relativeness be: I3-1: I3-2: I3-4=0.83:0.96:1.99.
By the analysis result phase comparison of this result with inefficacy detection parameters, it appeared that when current ratio is more than 1
Time just have precipitated crystal occur.
Refer to Fig. 9, in the anode component 3 shown in Fig. 9, the anolyte input of anode base portion 33
End 331 is equipped with a member for prolonging 34, and the most therefore anolyte has to pass through the runner of member for prolonging 34
F could shunt and move each THICKNESS CONTROL region Z1～Z4 to anode chamber 30.It should be noted that
Cross the configuration of this member for prolonging 34, between Z3 and Z4 of THICKNESS CONTROL region anolyte flow path it
Distance d3 ' 27mm can be extended for, and then can be by THICKNESS CONTROL region Z3And Z4Between plating
Current value I3-4It is adjusted to 0.81 × 1/C, to prevent the generation of precipitated crystal.
Subsidiary one carries, and above-mentioned all Parameter Conditions are intended for illustrating, and do not limit the present invention；This
One of ordinary skill appreciates that of field, in different electroplating systems, it is not necessary to be to work as current ratio
Just having precipitated crystal during more than 1 to occur, this benchmark can be according to the technological parameter used by each electroplating system
Condition is adjusted, and the length of member for prolonging 34 also can relatively be adjusted.
In sum, the present invention at least has following advantage compared with existing electroplating device:
In the anode component of the present invention, it is configured with extra between anolyte inlet tube and anolyte input
Member for prolonging, consequently, it is possible to can pass through by the flowing of the anolyte attached by the runner of member for prolonging
Path helps the equivalent resistance between THICKNESS CONTROL region, to avoid because of anolyte inlet tube
With the junction of anolyte input have during electroplating crystal produce and cannot be carried out large scale it
The problem of zinc coat thickness control occurs.
Secondly as diverse location can be independently applied bias during electroplating on anode component, therefore,
Uniform electroplating thickness section can be produced over the whole substrate.
Furthermore, through the configuration of member for prolonging, the anode component of the present invention has only to implement routine on time
Property maintenance and maintenance, just can effectively increase the service life, estimate also can save nearly 480,000 every year
The maintenance cost expenditure of unit.
Only the foregoing is only the preferred embodiments of the invention, be not intended to limit to the patent protection of the present invention
Scope, therefore such as use description of the invention and the equivalence change for it of graphic content institute, the most all wrap
In the range of being contained in the rights protection of the present invention, close and give Chen Ming.
Symbol description
E electrochemistry electroplanting device
1 reaction cavity
10 cathode chambers
11 catholyte circulation lines
111 catholyte inlet tubes
112 catholyte outlets
12 catholyte storage tanks
2 substrate support member
21 contact rings
3 anode components
30 anode chambers
31 anolyte circulation lines
311 anolyte inlet tubes
312 anolyte outlet pipes
32 anolyte storage tanks
33 anode base portions
331 anolyte inputs
332 anode component arrays
333 anode components
Z1～Z4 THICKNESS CONTROL region
34 member for prolongings
Unit 340
341 bodies
342 first connecting portions
343 first connecting portions
S base material
V1, V2 valve member
P1, P2 pump
L length
F runner
D1, d2, d3, d3 ' distance of anolyte flow path
Claims (10)
1. an anode component, is applied to an electrochemistry electroplanting device, it is characterised in that this anode portion
Part includes:
One anode base portion, has an anolyte input；
One anode chamber, is arranged on this anode base portion, for accommodating an anolyte, this anode
Room has the multiple THICKNESS CONTROL regions being applied in different biass；And
One member for prolonging, is connected to this anolyte input, this member for prolonging have corresponding to
Multiple runners in the plurality of THICKNESS CONTROL region, wherein, the length of this member for prolonging and this sun
The impedance factor of pole liquid is proportionate, and the length of this member for prolonging and the plurality of runner is interior
Footpath is negative correlation.
Anode component the most according to claim 1, wherein, this member for prolonging includes a body
With respectively from one first connecting portion of the opposite end elongation moulding of this body and one second even
Meeting portion, the plurality of runner is positioned at this body and the length direction along this body extends,
This first connecting portion is connected with this anolyte input, and this second connecting portion sets one in order to connect
Anolyte inlet tube.
Anode component the most according to claim 1, wherein, this member for prolonging is that multiple prolongation is single
Unit is formed, and this extension unit each includes a body and relative from this body respectively
One first connecting portion of two ends elongation moulding and one second connecting portion, and this extension unit arbitrary
This first connecting portion in order to connect this anolyte input or another this extension unit this
Two connecting portions.
Anode component the most according to claim 1, wherein, the plurality of THICKNESS CONTROL region is in same
Heart annular arrangement.
Anode component the most according to claim 1, wherein, this member for prolonging with one-body molded or
Assembling mode is incorporated into this anolyte input.
6. an electrochemistry electroplanting device, it is characterised in that including:
One reaction cavity, is provided with a cathode chamber in this reaction cavity, for accommodating a catholyte；
One substrate support member, is arranged at the top of this cathode chamber；And
One anode component, is arranged at the lower section of this cathode chamber, and this anode component includes:
One anode base portion, has an anolyte input；
One anode chamber, is arranged on this anode base portion, for accommodating an anolyte, and should
Anode chamber has the multiple THICKNESS CONTROL regions being applied in different biass；And
One member for prolonging, is connected to this anolyte input, and it is right that this member for prolonging has
Should be in multiple runners in the plurality of THICKNESS CONTROL region, wherein, the length of this member for prolonging
Degree and the impedance factor of this anolyte are proportionate, and the length of this member for prolonging and this
The internal diameter of multiple runners is negative correlation.
Electrochemistry electroplanting device the most according to claim 6, wherein, this member for prolonging includes one
Body with respectively from one first connecting portion and of the opposite end elongation moulding of this body
Second connecting portion, the plurality of runner is positioned at this body and the length direction along this body
Extend, this first connecting portion is connected with this anolyte input, this second connecting portion in order to
Connect and set an anolyte inlet tube.
Electrochemistry electroplanting device the most according to claim 6, wherein, this member for prolonging is multiple
Extension unit is formed, and this extension unit each includes a body and respectively from this body
One first connecting portion of opposite end elongation moulding and one second connecting portion, and arbitrary this prolong
This first connecting portion of long unit is in order to connect this anolyte input or another this extension unit
This second connecting portion.
Electrochemistry electroplanting device the most according to claim 6, wherein, this member for prolonging is with one
Molding or assembling mode are incorporated into this anolyte input.
Electrochemistry electroplanting device the most according to claim 6, wherein, this substrate support member has
Having a contact ring, this contact ring is adjacent to the top of this cathode chamber, and this contact ring by away from
This anode component and move toward near the direction of this anode component.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104105008 | 2015-02-13 | ||
| TW104105008A TWI560323B (en) | 2015-02-13 | 2015-02-13 | Electrochemical plating device and anode assembly thereof |
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| Publication Number | Publication Date |
|---|---|
| CN105986304A true CN105986304A (en) | 2016-10-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510096086.7A Pending CN105986304A (en) | 2015-02-13 | 2015-03-04 | Electrochemical plating apparatus and anode member thereof |
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| Country | Link |
|---|---|
| CN (1) | CN105986304A (en) |
| TW (1) | TWI560323B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108624940A (en) * | 2017-03-22 | 2018-10-09 | 株式会社荏原制作所 | The determination method of plater and plating slot structure |
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| US20050145499A1 (en) * | 2000-06-05 | 2005-07-07 | Applied Materials, Inc. | Plating of a thin metal seed layer |
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| US4687562A (en) * | 1986-12-23 | 1987-08-18 | Amp Incorporated | Anode assembly for selectively plating electrical terminals |
| CN1290310A (en) * | 1998-02-12 | 2001-04-04 | Acm研究公司 | Plating apparatus and method |
| EP1010779A2 (en) * | 1998-12-01 | 2000-06-21 | Giovanna Angelini | Method and apparatus for the continuous chromium-plating of elongated members |
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| CN108624940A (en) * | 2017-03-22 | 2018-10-09 | 株式会社荏原制作所 | The determination method of plater and plating slot structure |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201629276A (en) | 2016-08-16 |
| TWI560323B (en) | 2016-12-01 |
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