CN1059802A - 带条形码的阴极射线管 - Google Patents

带条形码的阴极射线管 Download PDF

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Publication number
CN1059802A
CN1059802A CN91105584A CN91105584A CN1059802A CN 1059802 A CN1059802 A CN 1059802A CN 91105584 A CN91105584 A CN 91105584A CN 91105584 A CN91105584 A CN 91105584A CN 1059802 A CN1059802 A CN 1059802A
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CN
China
Prior art keywords
ray tube
cathode ray
bar code
substrate
font code
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN91105584A
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English (en)
Inventor
李淳炯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung SDI Co Ltd
Original Assignee
Samsung Electron Devices Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electron Devices Co Ltd filed Critical Samsung Electron Devices Co Ltd
Publication of CN1059802A publication Critical patent/CN1059802A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)

Abstract

本发明公开了一种带条形码的阴极射线管。在 其面板侧边设有条形码的阴极射线管中，耐热合成树 脂涂敷在阴极射线管面板侧边的预定区域上，形成预 定厚度的基片，条形码凹雕于该基片上。即使在各工 序，如烘烤工序的加热过程中，该阴极射线管也不会 被热损坏，因此，条形码和基片可在制造该阴极射线 管的初始工序中形成。相应地，由于条形码存在于阴 极射线管制造的全过程中，因而可在整个生产线上进 行产品管理。

Description

本发明涉及一种带条形码的阴极射线管，尤其是涉及一种具有改进的条形码的阴极射线管。
在产品的制造、储存和售后等过程中，为了对产品进行计算机化管理，采用条形码来提供产品识别信息，这种条形码也被设置和应用于阴极射线管中。
在如图1中所示的传统的阴极射线管中，标示有条形码的基片40最通常地是安装在面板20的侧边。基片40一般由耐热涂料形成，其上设有强对比色的条形码。
这种传统的条形码设置方法实施起来过分复杂，因为要在在面板的侧边上进行液体涂料的涂敷和尔后的干燥，而条形码本身是用液体形式的涂料刻划而成并干燥。此外，用于形成条形码的第二种涂敷材料的添加是累赘的。
本发明的目的是提供一种带有改进构造的条形码的阴极射线管，以消除上述问题。
为实现本发明的目的，在侧边设置有条形码的阴极射线管中，在阴极射线管面板侧边的预定区域上涂敷耐热合成树脂，形成预定厚度的一个基片，在该基片上通过凹雕方式形成条形码。
通过参考附图描述本发明的优选实施例，本发明的上述目的和其它优点将变得更为清楚。
图1是带传统的条形码的阴极射线管的透视图;
图2是根据本发明的带条形码的阴极射线管的透视图;
图3是图2所示的根据本发明的阴极射线管面板侧边上设置的上标示有条形码的基片剖面图。
图2简略地示意出根据本发明的带条形码的阴极射线管。
像任何标准的阴极射线管那样，本发明的阴极射线管包括其内表面形成荧光屏21的面板20和其中安装电子轮32的锥体30的颈部31。向电子枪32和屏21提供很高的电压的阳极端子33设置在锥体30的外表面上，为防止漏电流，围绕阳极端子形成有绝缘膜34。
合成树脂材料的基片40复盖在阴极射线管10的面板侧边的予定区域上，条形码呈条带状并以栅条形式形成在基片40上。条形码是通过凹雕工艺形成在基片40上的，并且特别是通过热能、激光处理等方式形成。
像通过围绕阴极射线管10的阳极端子33涂敷形成的绝缘膜34那样，基片40用硅胶制成。相应地，该基片40在和绝缘膜34相同工序中形成。在该基片和绝缘膜干燥硬化之后，并且在后续工序进行之前，专用  的序列信息，如制造参数、货号等，通过激光处理机在基片40上作为凹雕条形码写出。
条形码凹雕在基片40具有粗糙感的表面上。与传统条形码基片相比，该基片具有维持条形码的优点，甚至在各工序，如烘烤工序的加热过程中也不会被热损坏，因此，条形码和基片可在制造阴极射线管的初始工序中形成。相应地，由于条形码从制造阴极射线管的初期就存在，因而可在整个生产线上对各产品进行管理。
本发明满足了现行生产管理方法中对生产、质量和产品的控制实行计算机化管理的需要。而且，由于热、湿度等原因引起的带条形码的基片的损坏也减少了。

Claims (3)

1、在包括面板和锥体的阴极射线管中，荧光屏形成在面板内表面，电子枪安装在锥体的颈部中，高压阳极端子形成在所述锥体的外表面上，并且围绕所述阳极端子形成有绝缘膜，
带条形码的阴极射线管，
其中所述的条形码是凹雕在耐热合成树脂材料的基片上的，该材料涂敷在所述阴极射线管的面板侧边的予定区域上。
2、如权利要求1所要求的带条形码的阴级射线管，其中，所述基片的材料与围绕所述锥体的所述阳极端子涂敷的绝缘膜的材料相同。
3、如权利要求1和2中的一个所要求的带条形码的阴极射线管，其中所述的基片的材料是硅橡胶。
CN91105584A 1990-08-06 1991-08-08 带条形码的阴极射线管 Pending CN1059802A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019900012013A KR940000894B1 (ko) 1990-08-06 1990-08-06 S램용 메모리셀
KR12013/90 1990-08-08

Publications (1)

Publication Number Publication Date
CN1059802A true CN1059802A (zh) 1992-03-25

Family

ID=19302046

Family Applications (1)

Application Number Title Priority Date Filing Date
CN91105584A Pending CN1059802A (zh) 1990-08-06 1991-08-08 带条形码的阴极射线管

Country Status (4)

Country Link
US (1) US5243555A (zh)
JP (1) JPH0812758B2 (zh)
KR (1) KR940000894B1 (zh)
CN (1) CN1059802A (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5726932A (en) * 1996-06-13 1998-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. Trench free SRAM cell structure
US5805496A (en) * 1996-12-27 1998-09-08 International Business Machines Corporation Four device SRAM cell with single bitline
KR100452902B1 (ko) * 2000-07-10 2004-10-15 미쓰비시덴키 가부시키가이샤 기억 장치
US7385840B2 (en) * 2005-07-28 2008-06-10 Texas Instruments Incorporated SRAM cell with independent static noise margin, trip voltage, and read current optimization
JP4877094B2 (ja) * 2007-06-22 2012-02-15 日本テキサス・インスツルメンツ株式会社 半導体装置、半導体メモリ装置及び半導体メモリセル
JP2011014210A (ja) * 2009-07-06 2011-01-20 Hitachi Ulsi Systems Co Ltd 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4128773A (en) * 1977-11-07 1978-12-05 Hughes Aircraft Company Volatile/non-volatile logic latch circuit
JPS5827917B2 (ja) * 1978-05-04 1983-06-13 日本電信電話株式会社 Ｍｉｓ記憶回路
JPS601715B2 (ja) * 1978-06-26 1985-01-17 ソニー株式会社 メモリ回路
JPS6055914B2 (ja) * 1979-10-19 1985-12-07 株式会社東芝 半導体記憶装置
US4575821A (en) * 1983-05-09 1986-03-11 Rockwell International Corporation Low power, high speed random access memory circuit
EP0217307B1 (en) * 1985-09-30 1992-03-11 Honeywell Inc. Radiation hard memory cell
US4995000A (en) * 1988-07-01 1991-02-19 Vitesse Semiconductor Corporation Static RAM cell with high speed and stability

Also Published As

Publication number Publication date
JPH0812758B2 (ja) 1996-02-07
US5243555A (en) 1993-09-07
KR940000894B1 (ko) 1994-02-03
KR920005156A (ko) 1992-03-28
JPH06119782A (ja) 1994-04-28

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