CN105977348B - Method based on 3D printing ferromagnetic layer enhancing LED luminous efficiencies - Google Patents
Method based on 3D printing ferromagnetic layer enhancing LED luminous efficiencies Download PDFInfo
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- CN105977348B CN105977348B CN201610324296.1A CN201610324296A CN105977348B CN 105977348 B CN105977348 B CN 105977348B CN 201610324296 A CN201610324296 A CN 201610324296A CN 105977348 B CN105977348 B CN 105977348B
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- 238000010146 3D printing Methods 0.000 title claims abstract description 45
- 230000005294 ferromagnetic effect Effects 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 19
- 230000002708 enhancing effect Effects 0.000 title claims abstract description 15
- 239000010410 layer Substances 0.000 claims abstract description 82
- 239000003302 ferromagnetic material Substances 0.000 claims abstract description 32
- 239000011241 protective layer Substances 0.000 claims abstract description 10
- 230000005291 magnetic effect Effects 0.000 claims abstract description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 10
- 238000010257 thawing Methods 0.000 claims description 10
- 238000007639 printing Methods 0.000 claims description 9
- 239000007772 electrode material Substances 0.000 claims description 7
- 238000001125 extrusion Methods 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 230000005415 magnetization Effects 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 229910003321 CoFe Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910018979 CoPt Inorganic materials 0.000 claims description 2
- 229910000684 Cobalt-chrome Inorganic materials 0.000 claims description 2
- 229910005347 FeSi Inorganic materials 0.000 claims description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 2
- 239000010952 cobalt-chrome Substances 0.000 claims description 2
- 230000004907 flux Effects 0.000 claims description 2
- 230000012010 growth Effects 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 230000006911 nucleation Effects 0.000 claims description 2
- 238000010899 nucleation Methods 0.000 claims description 2
- -1 or Co Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 239000000155 melt Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 230000005693 optoelectronics Effects 0.000 abstract description 2
- 230000006798 recombination Effects 0.000 abstract description 2
- 238000005215 recombination Methods 0.000 abstract description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- RIVZIMVWRDTIOQ-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co].[Co] RIVZIMVWRDTIOQ-UHFFFAOYSA-N 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000004038 photonic crystal Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000003752 improving hair Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/115—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by spraying molten metal, i.e. spray sintering, spray casting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Led Device Packages (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention belongs to field of optoelectronic devices; method specifically based on 3D printing ferromagnetic layer enhancing LED luminous efficiencies; it uses the epitaxial wafer with nucleating layer, unintentional doped layer, n-layer, the mqw active layer of multicycle and p-type layer that MOCVD or MBE is grown; and n-layer table top is etched, 3D printing Ohmic contact reflective mirror, n-type electrode, p-type electrode, ferromagnetic material layers and ferromagnetic material protective layer.The present invention strengthens the luminous efficiency of LED using 3D printing ferromagnetic layer, and the magnetic fields that ferromagnetic material layers produce can improve the rate of radiative recombination of carrier, so as to improve luminous efficiency in multi-quantum well active region by carrier local in the region of rich In.And 3D printing simple production process, it can effectively improve production efficiency.
Description
Technical field
The invention belongs to field of optoelectronic devices, the specifically method based on 3D printing ferromagnetic layer enhancing LED luminous efficiencies.
Background technology
Light emitting diode（Light Emitting Diode, LED）With high brightness, low energy consumption, long-life, response speed
The features such as fast and environmentally friendly, be widely used in indoor and street lighting, traffic signals and outdoor display, automobile lamp illumination,
The multiple fields such as liquid crystal backlight.
For the internal quantum efficiency of blue light GaN bases LED up to more than 80%, the internal quantum efficiency of green light LED is only 40% at present.
But the external quantum efficiency of high-power blue-light LED chip usually only 40% or so, and green light is lower.External quantum efficiency is restricted to improve
Principal element be that GaN interfaces cause the extraction efficiency of light relatively low with Air Interface experiences total internal reflection, this is because GaN materials
The refractive index 2.5 of material, the refractive index 1 of air, the critical angle that GaN is totally reflected with Air Interface is 23.6 °, i.e., active area produces
Raw light only has minority to escape out body material.At present both at home and abroad mainly using Bragg reflective layer (DBR), figure
Change substrate（PSS）, surface roughening and the technology such as photonic crystal improve the light extraction efficiency of chip.Rule degrees of the PSS to figure
It is required that very high, Sapphire Substrate is harder in addition, either dry etching or wet-etching technology, the one of full wafer figure
There is certain difficulty in cause property and uniformity, and manufacturing process is very high to equipment and technological requirement, causes high expensive.DBR
With photonic crystal manufacture craft is relative complex, cost is higher, and surface texture technology uses dry etching or wet etching work
Skill, there is also very big challenge.
3D printing technique has the characteristics that processing step is simple, shaping speed is fast, precision is high.By this ideal technology skill
Art is applied to that production technology can be simplified in the preparation process of LED component, improves production efficiency.
The content of the invention
The present invention is in order to solve the problems, such as that conventional art exists in terms of blue green light LED light extraction efficiency is improved, there is provided
A kind of method based on 3D printing ferromagnetic layer enhancing LED luminous efficiencies.
The present invention is achieved by the following technical solutions：Strengthen the method for LED luminous efficiencies based on 3D printing ferromagnetic layer,
Step 1：Using MOCVD or MBE growths with low temperature nucleation layer, unintentional doped layer, n-GaN layers, multicycle
The epitaxial wafer of InGaN/GaN active layers and p-GaN layer；
Step 2：In etching n-layer table top on epitaxial wafer, etching depth reaches n-GaN layers；
Step 3：The motion path program of each 3D printing head is write according to structure design, using clean epitaxial wafer as
Substrate is put into 3D printer, and Ohmic contact is printed in p-GaN layer using single or array 3D mirror material printheads
Reflective mirror；
Using single or array 3D n-type electrode file printing heads n-type electrode is printed on n-layer table top；
P-type electrode, and p are printed on Ohmic contact reflective mirror using single or array 3D p-type electrode material printheads
Type electrode occupies 1/3rd of Ohmic contact reflective mirror；
Beaten using single or array 3D ferromagnetic materials printhead on other Ohmic contact reflective mirrors in addition to p-type electrode
Tin graphed sheet flux material layer；
Ferromagnetic material protective layer is printed on ferromagnetic material layers using the ferromagnetic protection materials printheads of single or array 3D；
Step 4：The substrate of printed ferromagnetic material protective layer is placed in external magnetic field and is magnetized, the intensity of magnetization is
0.5T-1.5T, temperature are 100-300 DEG C, time 30-120min.
The present invention strengthens the luminous efficiency of LED using 3D printing ferromagnetic layer, the magnetic fields that ferromagnetic material layers produce in
Multi-quantum well active region, can improve the rate of radiative recombination of carrier, so as to improve hair by carrier local in the region of rich In
Light efficiency.And 3D printing simple production process, it can effectively improve production efficiency.
Brief description of the drawings
Fig. 1 is a kind of preparation flow figure of LED of the present invention.
Fig. 2 is the LED structure schematic diagram prepared according to Fig. 1 flows.
Fig. 3 is the top view of LED after the completion of ferromagnetic material layers printing.
Embodiment
The present invention is during 3D printing enhancing LED luminous efficiencies are realized, the 3D printing form used is melting, laser
One kind in sintering.Using melting form 3D printing when, various printed material implementation steps are as follows：
Ohmic contact reflective mirror
Metallic nickel powder is added in the metallic nickel melt chamber of 3D printer and carries out fast thawing, control temperature makes at 1453 DEG C
It is in semi-cured state, cures rapidly after 3D printing head extrusion, forms metallic nickel film；Metallic silver powder is added to 3D to beat
Fast thawing is carried out in the metallic silver melt chamber of print machine, control temperature is at semi-cured state at 961 DEG C, is extruded from 3D printing head
It is rapid afterwards to cure, form metal silverskin；Metallic nickel powder is added in the metallic nickel melt chamber of 3D printer and carries out fast thawing, controlled
Temperature processed is at semi-cured state at 1453 DEG C, cures rapidly after 3D printing head extrusion, forms metallic nickel film.To prevent
Printhead and substrate are placed in atmosphere of inert gases by metal oxidation.In order to form good Ohmic contact with p-type layer, in Ni/
Made annealing treatment in atmosphere after the completion of the printing of Ag/Ni films, temperature is 400-600 DEG C（400 DEG C, 500 DEG C or 600 DEG C）.
N-type electrode
Crome metal powder is added in the crome metal melt chamber of 3D printer and carries out fast thawing, control temperature makes at 1890 DEG C
It is in semi-cured state, cures rapidly after 3D printing head extrusion, forms crome metal film.Metallic gold powder is added to 3D to beat
Fast thawing is carried out in the metallic gold melt chamber of print machine, control temperature is at semi-cured state at 1062 DEG C, is squeezed from 3D printing head
It is rapid after going out to cure, form metal golden film.To prevent metal oxidation that printhead and substrate are placed in atmosphere of inert gases.
Type electrode
Crome metal powder is added in the crome metal melt chamber of 3D printer and carries out fast thawing, control temperature makes at 1890 DEG C
It is in semi-cured state, cures rapidly after 3D printing head extrusion, forms crome metal film.Metallic gold powder is added to 3D to beat
Fast thawing is carried out in the metallic gold melt chamber of print machine, control temperature is at semi-cured state at 1062 DEG C, is squeezed from 3D printing head
It is rapid after going out to cure, form metal golden film.To prevent metal oxidation that printhead and substrate are placed in atmosphere of inert gases.
Ferromagnetic material layers
Used ferromagnetic material is CoFe, NiFe, CoCr, CoPt or FeSi alloy, or Co, Fe or Ni simple substance member
Element.By taking ferromagnetic material CoFe as an example, metallic cobalt iron powder is added in the metal ferro-cobalt melt chamber of 3D printer and carries out fast thawing,
Control temperature is at semi-cured state at 1495 DEG C, cures rapidly after 3D printing head extrusion, forms ferro-cobalt film.It is anti-
Printhead and substrate are placed in atmosphere of inert gases by only metal oxidation.
Ferromagnetic material protective layer
Metal tantalum powder is added in the metal tantalum melt chamber of 3D printer and carries out fast thawing, control temperature makes at 2996 DEG C
It is in semi-cured state, cures rapidly after 3D printing head extrusion, forms metal tantalum film.To prevent metal oxidation by printhead
It is placed in substrate in atmosphere of inert gases.
Embodiment 1
Strengthen the method for LED luminous efficiencies based on 3D printing ferromagnetic layer,
Step 1：Sapphire Substrate is provided, grows growing low temperature GaN nucleating layers, unintentional doping GaN successively on substrate
Layer, n-GaN, InGaN/GaN MQW, the epitaxial wafer of p-GaN；
Step 2：In etching n-layer table top on epitaxial wafer, etching depth reaches n-GaN layers；
Step 3：The motion path program of each 3D printing head is write according to structure design, using clean epitaxial wafer as
Substrate is put into 3D printer, is using single or array 3D mirror material printheads print thickness in p-GaN layer
The Ohmic contact reflective mirror of 100nm；
The N-shaped that print thickness is 220nm on n-layer table top using single or array 3D n-type electrode file printing heads
Electrode；
It is 300nm using single or array 3D p-type electrode material printheads print thickness on Ohmic contact reflective mirror
P-type electrode, and p-type electrode occupies 1/3rd of Ohmic contact reflective mirror；
Beaten using single or array 3D ferromagnetic materials printhead on other Ohmic contact reflective mirrors in addition to p-type electrode
Print thickness is 300nm ferromagnetic material layers；
The iron that print thickness is 20nm on ferromagnetic material layers using the ferromagnetic protection materials printheads of single or array 3D
Magnetic material protection layer；
Step 4：The substrate of printed ferromagnetic material protective layer is placed in external magnetic field and is magnetized, the intensity of magnetization is
0.5T, temperature are 300 DEG C, time 120min.
Embodiment 2
Strengthen the method for LED luminous efficiencies based on 3D printing ferromagnetic layer,
Step 1：Sapphire Substrate is provided, grows growing low temperature GaN nucleating layers, unintentional doping GaN successively on substrate
Layer, n-GaN, InGaN/GaN MQW, the epitaxial wafer of p-GaN；
Step 2：In etching n-layer table top on epitaxial wafer, etching depth reaches n-GaN layers；
Step 3：The motion path program of each 3D printing head is write according to structure design, using clean epitaxial wafer as
Substrate is put into 3D printer, is using single or array 3D mirror material printheads print thickness in p-GaN layer
The Ohmic contact reflective mirror of 150nm；
The N-shaped that print thickness is 300nm on n-layer table top using single or array 3D n-type electrode file printing heads
Electrode；
It is 150nm using single or array 3D p-type electrode material printheads print thickness on Ohmic contact reflective mirror
P-type electrode, and p-type electrode occupies 1/3rd of Ohmic contact reflective mirror；
Beaten using single or array 3D ferromagnetic materials printhead on other Ohmic contact reflective mirrors in addition to p-type electrode
Print thickness is 500nm ferromagnetic material layers；
The iron that print thickness is 60nm on ferromagnetic material layers using the ferromagnetic protection materials printheads of single or array 3D
Magnetic material protection layer；
Step 4：The substrate of printed ferromagnetic material protective layer is placed in external magnetic field and is magnetized, the intensity of magnetization is
1.5T, temperature are 100 DEG C, time 30min.
Embodiment 3
Strengthen the method for LED luminous efficiencies based on 3D printing ferromagnetic layer,
Step 1：Sapphire Substrate is provided, grows growing low temperature GaN nucleating layers, unintentional doping GaN successively on substrate
Layer, n-GaN, InGaN/GaN MQW, the epitaxial wafer of p-GaN；
Step 2：In etching n-layer table top on epitaxial wafer, etching depth reaches n-GaN layers；
Step 3：The motion path program of each 3D printing head is write according to structure design, using clean epitaxial wafer as
Substrate is put into 3D printer, is using single or array 3D mirror material printheads print thickness in p-GaN layer
The Ohmic contact reflective mirror of 200nm；
The N-shaped that print thickness is 150nm on n-layer table top using single or array 3D n-type electrode file printing heads
Electrode；
It is 220nm using single or array 3D p-type electrode material printheads print thickness on Ohmic contact reflective mirror
P-type electrode, and p-type electrode occupies 1/3rd of Ohmic contact reflective mirror；
Beaten using single or array 3D ferromagnetic materials printhead on other Ohmic contact reflective mirrors in addition to p-type electrode
Print thickness is 100nm ferromagnetic material layers；
The iron that print thickness is 100nm on ferromagnetic material layers using the ferromagnetic protection materials printheads of single or array 3D
Magnetic material protection layer；
Step 4：The substrate of printed ferromagnetic material protective layer is placed in external magnetic field and is magnetized, the intensity of magnetization is
1.0T, temperature are 200 DEG C, time 70min.
Claims (9)
1. the method based on 3D printing ferromagnetic layer enhancing LED luminous efficiencies, it is characterised in that
Step 1：Using MOCVD or MBE growths with low temperature nucleation layer, unintentional doped layer, n-GaN layers, multicycle
The epitaxial wafer of InGaN/GaN active layers and p-GaN layer；
Step 2：In etching n-layer table top on epitaxial wafer, etching depth reaches n-GaN layers；
Step 3：The motion path program of each 3D printing head is write according to structure design, using clean epitaxial wafer as substrate
It is put into 3D printer, it is reflective that Ohmic contact is printed in p-GaN layer using single or array 3D mirror material printheads
Mirror；
Using single or array 3D n-type electrode file printing heads n-type electrode is printed on n-layer table top；
P-type electrode, and p-type electricity are printed on Ohmic contact reflective mirror using single or array 3D p-type electrode material printheads
Pole occupies 1/3rd of Ohmic contact reflective mirror；
Using single or array 3D ferromagnetic materials printhead iron is printed on other Ohmic contact reflective mirrors in addition to p-type electrode
Flux material layer；
Ferromagnetic material protective layer is printed on ferromagnetic material layers using the ferromagnetic protection materials printheads of single or array 3D；
Step 4：The substrate of printed ferromagnetic material protective layer is placed in external magnetic field and is magnetized, intensity of magnetization 0.5T-
1.5T, temperature are 100-300 DEG C, time 30-120min.
2. the method according to claim 1 based on 3D printing ferromagnetic layer enhancing LED luminous efficiencies, it is characterised in that institute
The thickness for stating Ohmic contact reflective mirror is 100-200nm, and used mirror material is Ni/Ag/Ni.
3. the method according to claim 1 based on 3D printing ferromagnetic layer enhancing LED luminous efficiencies, it is characterised in that institute
The thickness for stating n-type electrode is 150nm ~ 300nm, and used n-type electrode material is Cr/Au.
4. the method according to claim 1 based on 3D printing ferromagnetic layer enhancing LED luminous efficiencies, it is characterised in that institute
The thickness for stating p-type electrode is 150nm ~ 300nm, and used p-type electrode material is Cr/Au.
5. the method according to claim 1 based on 3D printing ferromagnetic layer enhancing LED luminous efficiencies, it is characterised in that institute
The thickness for stating ferromagnetic material layers is 100nm ~ 500nm, and used ferromagnetic material closes for CoFe, NiFe, CoCr, CoPt or FeSi
Gold, or Co, Fe or Ni simple substance element.
6. the method according to claim 1 based on 3D printing ferromagnetic layer enhancing LED luminous efficiencies, it is characterised in that institute
The thickness for stating ferromagnetic material protective layer is 20nm ~ 100nm, and used ferromagnetic protection materials are Ta.
7. the method based on 3D printing ferromagnetic layer enhancing LED luminous efficiencies according to claim 1 to 6 any claim,
It is characterized in that, 3D printing is melting or laser sintered in the form of.
8. the method according to claim 7 based on 3D printing ferromagnetic layer enhancing LED luminous efficiencies, it is characterised in that molten
The 3D printing for melting form is：The material of required printing is added in the melt chamber in 3D printer and carries out fast thawing, controls temperature
So that material is in semi-cured state, then film is quickly solidified to form after 3D printing head extrusion.
9. the method according to claim 8 based on 3D printing ferromagnetic layer enhancing LED luminous efficiencies, it is characterised in that when
When the material of required printing is metal, 3D printing head and substrate need to be placed in atmosphere of inert gases.
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| CN103730552A (en) * | 2014-01-03 | 2014-04-16 | 合肥彩虹蓝光科技有限公司 | Epitaxial growth method for improving LED light emitting efficiency |
| CN105216331A (en) * | 2015-11-09 | 2016-01-06 | 温州市施迈德科技有限公司 | A kind of 3D printer |
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| US20060018098A1 (en) * | 2004-07-22 | 2006-01-26 | Adrian Hill | PCB board incorporating thermo-encapsulant for providing controlled heat dissipation and electromagnetic functions and associated method of manufacturing a PCB board |
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| CN103730552A (en) * | 2014-01-03 | 2014-04-16 | 合肥彩虹蓝光科技有限公司 | Epitaxial growth method for improving LED light emitting efficiency |
| CN105216331A (en) * | 2015-11-09 | 2016-01-06 | 温州市施迈德科技有限公司 | A kind of 3D printer |
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