CN102751409B - A kind of vertical gallium nitride Light-emitting Diode And Its Making Method - Google Patents
A kind of vertical gallium nitride Light-emitting Diode And Its Making Method Download PDFInfo
- Publication number
- CN102751409B CN102751409B CN201210235037.3A CN201210235037A CN102751409B CN 102751409 B CN102751409 B CN 102751409B CN 201210235037 A CN201210235037 A CN 201210235037A CN 102751409 B CN102751409 B CN 102751409B
- Authority
- CN
- China
- Prior art keywords
- layer
- gallium
- light emitting
- emitting diode
- vertical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 49
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 45
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 25
- 230000004888 barrier function Effects 0.000 claims abstract description 10
- 238000009826 distribution Methods 0.000 claims abstract description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 18
- 229910052733 gallium Inorganic materials 0.000 claims description 18
- 229910052709 silver Inorganic materials 0.000 claims description 16
- 239000004332 silver Substances 0.000 claims description 16
- 238000006213 oxygenation reaction Methods 0.000 claims description 9
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000001737 promoting effect Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910001923 silver oxide Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000013517 stratification Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Led Devices (AREA)
Abstract
The invention discloses a kind of vertical gallium nitride based light-emitting diode, adopt gallium oxide as the current barrier layer of gallium nitride based LED with vertical structure.Its structure comprises: electrically-conductive backing plate; Light emitting epitaxial layer, is positioned on described electrically-conductive backing plate; Argentum reflecting layer, between described electrically-conductive backing plate and described light emitting epitaxial layer; Gallium oxide layer, between described argentum reflecting layer and described light emitting epitaxial layer, for changing pulse current injectingt distribution.
Description
Technical field
The present invention relates to a kind of Light-emitting Diode And Its Making Method, more specifically, relate to a kind of vertical gallium nitride based light-emitting diode and preparation method thereof.
Background technology
In recent years, vertical thin-film structure GaN base light emitting diode (LED) has become the focus of research and development.Compare with traditional formal dress, inverted structure, vertical structure LED passes through the combination of wafer bonding or the technique such as plating, laser lift-off (LLO), GaN base epitaxial loayer is transferred to conduction and the good metal of heat conductivility or semiconductor substrate materials from Sapphire Substrate, form electrode to distribute up and down, electric current vertically injects, thus solve in formal dress, inverted structure GaN base LED component because electrode horizontal distribution, electric current side direction inject the such as poor heat radiation caused, the series of problems such as CURRENT DISTRIBUTION inequality, poor reliability.
Summary of the invention
Main purpose of the present invention is to provide a kind of vertical gallium nitride based light-emitting diode, adopts gallium oxide as the current barrier layer of gallium nitride based LED with vertical structure.
According to a kind of vertical gallium nitride based light-emitting diode realizing above-mentioned purpose, its structure comprises:
One electrically-conductive backing plate;
One light emitting epitaxial layer, is positioned on described electrically-conductive backing plate;
One argentum reflecting layer, between described electrically-conductive backing plate and described light emitting epitaxial layer;
Gallium monoxide layer, between described argentum reflecting layer and described light emitting epitaxial layer, for changing pulse current injectingt distribution.
Further, present invention also offers a kind of manufacture method of vertical gallium nitride based light-emitting diode, be included on an electrically-conductive backing plate and form a light emitting epitaxial layer, it is characterized in that:
An argentum reflecting layer between described electrically-conductive backing plate and described light emitting epitaxial layer;
Gallium monoxide layer is formed, for changing the distribution of light emitting epitaxial layer described in pulse current injectingt between described argentum reflecting layer and described light emitting epitaxial layer.
Accompanying drawing explanation
Fig. 1 is the vertical gallium nitride base light emitting diode chip structural representation of the embodiment of the present invention.
Parts symbol description in figure:
101:n-GaN layer
102:MQW layer
103:p-GaN layer
110: gallium oxide layer
120: gallium silver oxide layer
130: argentum reflecting layer
140: metal laminated
150: silicon substrate
160:p electrode
170:n electrode.
Embodiment
For the GaN base LED of general vertical stratification, exiting surface is N-shaped GaN base epitaxial loayer, gets light rate to strengthen, and usually can make a metallic reflector between p-type GaN base epitaxial loayer and electrically-conductive backing plate.For blue, green light band, silver (Ag) has higher reflectivity compared to other metal materials, and can form good ohmic contact with p-type GaN base epitaxial loayer, so be usually used in metallic reflector in vertical structure LED.
The n-electrode of vertical stratification GaN base LED is positioned at top, and its existence can be blocked and is absorbed with the light that active layer sends.Being in the light to reduce electrode, being typically employed between p-type gallium nitride-based epitaxial layer and reflector and inserting a current barrier layer corresponding with n-electrode, to change pulse current injectingt distribution, the active layer reduced below n-electrode is luminous.At present, what most current barrier layers adopted is silicon dioxide, but silicon dioxide and the silver adhesion extreme difference therebetween as reflector, if adopt silicon dioxide can there is larger technique hidden danger as the current barrier layer of vertical structure LED.
Each embodiment discloses a kind of vertical gallium nitride based light-emitting diode and preparation method thereof below, adopts gallium oxide as the current barrier layer of gallium nitride based LED with vertical structure, with solve with silver stick problem.
A kind of vertical gallium nitride based light-emitting diode, its structure comprises: an electrically-conductive backing plate; One light emitting epitaxial layer, is positioned on described electrically-conductive backing plate; One argentum reflecting layer, between described electrically-conductive backing plate and described light emitting epitaxial layer; Gallium monoxide layer, between described argentum reflecting layer and described light emitting epitaxial layer, for changing pulse current injectingt distribution.
In preferred embodiments more of the present invention, between gallium oxide layer and argentum reflecting layer, form a gallium silver oxygenation level layer, for promoting the adhesive force of described argentum reflecting layer and gallium oxide layer.
In preferred embodiments more of the present invention, described gallium silver oxygenation level layer is formed through thermal annealing.
In some embodiments of the invention, described light emitting epitaxial layer comprises and comprises p-type layer, active layer and n-layer successively, and wherein p-type layer and described argentum reflecting layer adjoin.One n-electrode is positioned on n-layer, and a p-electrode is positioned at the back side of electrically-conductive backing plate, for providing pulse current injectingt for active layer.
In one embodiment of this invention, on vertical plane, the size and location of described gallium oxide layer are identical with described n-electrode or close, luminous for the active layer reduced below n-electrode.
Embodiment
Below in conjunction with drawings and Examples, embodiments of the present invention are described further.
A kind of vertical gallium nitride base light emitting diode chip structure as shown in Figure 1, comprises silicon substrate 150, n-GaN layer 101, multiple quantum well active layer (MQW) 102, p-GaN layer 103, gallium oxide layer 110, gallium silver oxide layer 120, argentum reflecting layer 130, metal laminated 140, P electrode 160, N electrode 170.
Wherein, silicon substrate 150 has two first type surfaces, front and back; Metal laminated 140 are formed on the front of silicon substrate 150, and its structure is Cr/Au/Pt/Cr, thickness 50/1000/50/50nm; Argentum reflecting layer 130 is formed on metal laminated 140, silver-colored thickness 200nm; P-GaN layer 103 is formed on argentum reflecting layer 130; Multiple quantum well active layer 102 is formed on p-GaN layer 103; N-GaN layer 101 is formed on multiple quantum well active layer 102; N-electrode 170 is formed on n-GaN layer 101; P-electrode 160 is formed at the back side of silicon substrate 150; With on the correspondence position of n-electrode 170 vertical plane, gallium silver oxide layer 120/ gallium oxide layer 110 structure sheaf is formed between argentum reflecting layer 130 and p-GaN layer 103, and the size of " gallium silver oxide layer/gallium oxide layer " structure sheaf and n-electrode 170 similar.
The vertical gallium nitride based light-emitting diode of said structure, by method preparation below.
The first step: at the front epitaxial growth of gallium nitride base light emitting epitaxial layer of Sapphire Substrate, comprise; N-GaN layer 101, multiple quantum well active layer 102 and p-GaN layer 103.
Second step: make gallium oxide layer 110 and argentum reflecting layer 130 in p-GaN layer 103, wherein gallium oxide layer 110 is between argentum reflecting layer 130 and p-GaN layer 103, the n-electrode with chip is formed corresponding relation at vertical plane by its size and location.
4th step: in the atmosphere containing nitrogen and oxygen mixed gas, rapid thermal annealing is carried out under temperature 480 DEG C of conditions, form gallium silver oxygenation level layer 120 to make the silver in silver-colored mirror layer 130 and the counterdiffusion of gallium oxide layer 110 phase fuse, thus gallium oxide layer 110 and argentum reflecting layer 130 are closely binded.
5th step: provide a Si substrate 150, thereon plated metal lamination 140, by light emitting epitaxial layer and Si substrate bonding.
6th step: remove Sapphire Substrate, expose n-GaN layer 101.
7th step: make P electrode 160 and make N electrode 170 at n-GaN layer 101 on the back side of Si substrate.
In the present embodiment, gallium oxide is a kind of printing opacity insulating material, can be used as current barrier layer; Secondly, gallium oxide can form close adhesion with silver after thermal annealing, its mechanism is after high annealing, silver can spread and fuse in gallium oxide layer, form gallium silver oxygenation level layer, the formation of gallium silver oxygenation level layer then greatly strengthen silver and the adhesive force of gallium oxide, is more suitable for the current barrier layer as gallium nitride light-emitting diode in vertical structure compared to silicon dioxide.
Claims (8)
1. a vertical gallium nitride based light-emitting diode, comprising:
One electrically-conductive backing plate;
One light emitting epitaxial layer, is positioned on described electrically-conductive backing plate;
One argentum reflecting layer, between described electrically-conductive backing plate and described light emitting epitaxial layer;
Gallium monoxide layer, between described argentum reflecting layer and described light emitting epitaxial layer, as current barrier layer, for changing the distribution of light emitting epitaxial layer described in pulse current injectingt;
A gallium silver oxygenation level layer is formed, for promoting the adhesive force of described argentum reflecting layer and gallium oxide layer between described gallium oxide layer and argentum reflecting layer.
2. vertical gallium nitride based light-emitting diode according to claim 1, is characterized in that: described gallium silver oxygenation level layer is through thermal annealing and is formed.
3. vertical gallium nitride based light-emitting diode according to claim 1, is characterized in that: described light emitting epitaxial layer comprises and comprises p-type layer, active layer and n-layer successively, and wherein p-type layer and described argentum reflecting layer adjoin.
4. vertical gallium nitride based light-emitting diode according to claim 3, is characterized in that: also comprise a n-electrode, is positioned on described n-layer.
5. vertical gallium nitride based light-emitting diode according to claim 4, is characterized in that: on vertical plane, and the size and location of described gallium oxide layer are identical with described n-electrode or close, luminous for the active layer reduced below n-electrode.
6. a manufacture method for vertical gallium nitride based light-emitting diode, is included on an electrically-conductive backing plate and forms a light emitting epitaxial layer, it is characterized in that:
An argentum reflecting layer is formed between described electrically-conductive backing plate and described light emitting epitaxial layer;
Gallium monoxide layer is formed, as current barrier layer, for changing the distribution of light emitting epitaxial layer described in pulse current injectingt between described argentum reflecting layer and described light emitting epitaxial layer;
A gallium silver oxygenation level layer is formed, for promoting the adhesive force of described argentum reflecting layer and gallium oxide layer between described gallium oxide layer and argentum reflecting layer.
7. the manufacture method of a kind of vertical gallium nitride based light-emitting diode according to claim 6, is characterized in that: form described gallium silver oxygenation level layer by thermal annealing.
8. the manufacture method of a kind of vertical gallium nitride based light-emitting diode according to claim 6, it is characterized in that: described light emitting epitaxial layer comprises and comprises p-type layer, active layer and n-layer successively, wherein p-type layer and described argentum reflecting layer adjoin;
Also comprise step: in n-layer, form a n-electrode;
On vertical plane, the size and location of described gallium oxide layer are identical with described n-electrode or close, luminous for the active layer reduced below n-electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210235037.3A CN102751409B (en) | 2012-07-09 | 2012-07-09 | A kind of vertical gallium nitride Light-emitting Diode And Its Making Method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210235037.3A CN102751409B (en) | 2012-07-09 | 2012-07-09 | A kind of vertical gallium nitride Light-emitting Diode And Its Making Method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102751409A CN102751409A (en) | 2012-10-24 |
| CN102751409B true CN102751409B (en) | 2015-09-02 |
Family
ID=47031434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210235037.3A Active CN102751409B (en) | 2012-07-09 | 2012-07-09 | A kind of vertical gallium nitride Light-emitting Diode And Its Making Method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102751409B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104638069A (en) * | 2015-02-04 | 2015-05-20 | 映瑞光电科技(上海)有限公司 | Vertical LED (Light-Emitting Diode) chip structure and manufacturing method thereof |
| CN109103091B (en) * | 2018-07-11 | 2021-11-09 | 西安电子科技大学 | Ga2O3Epitaxial layer transfer method of base MOSFET device |
| CN112786750B (en) * | 2021-02-22 | 2022-05-20 | 江苏大学 | Thin film type AlGaInP light-emitting diode structure and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1917246A (en) * | 2005-08-14 | 2007-02-21 | 三星电子株式会社 | Nitride-based white light emitting device and manufacturing method thereof |
| CN101494268A (en) * | 2008-11-24 | 2009-07-29 | 厦门市三安光电科技有限公司 | Method for manufacturing vertical light-emitting diode with current blocking structure |
| CN102315346A (en) * | 2010-07-05 | 2012-01-11 | Lg伊诺特有限公司 | Luminescent device and manufacturing approach thereof |
| CN102484176A (en) * | 2009-09-30 | 2012-05-30 | 京瓷株式会社 | Light Emitting Element And Method For Manufacturing Light Emitting Element |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2445019B1 (en) * | 2010-10-25 | 2018-01-24 | LG Innotek Co., Ltd. | Electrode configuration for a light emitting diode |
-
2012
- 2012-07-09 CN CN201210235037.3A patent/CN102751409B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1917246A (en) * | 2005-08-14 | 2007-02-21 | 三星电子株式会社 | Nitride-based white light emitting device and manufacturing method thereof |
| CN101494268A (en) * | 2008-11-24 | 2009-07-29 | 厦门市三安光电科技有限公司 | Method for manufacturing vertical light-emitting diode with current blocking structure |
| CN102484176A (en) * | 2009-09-30 | 2012-05-30 | 京瓷株式会社 | Light Emitting Element And Method For Manufacturing Light Emitting Element |
| CN102315346A (en) * | 2010-07-05 | 2012-01-11 | Lg伊诺特有限公司 | Luminescent device and manufacturing approach thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102751409A (en) | 2012-10-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5533675B2 (en) | Semiconductor light emitting device | |
| CN100394621C (en) | Gallium nitride based LED chip and its manufacturing method | |
| US9190557B2 (en) | Ultraviolet semiconductor light-emitting device and fabrication method | |
| WO2013046419A1 (en) | Nitride semiconductor element and method for producing same | |
| JP2006066903A (en) | Positive electrode for semiconductor light-emitting element | |
| TW201946294A (en) | Light-emitting diode and manufacturing method therefor | |
| CN104813490A (en) | Light-emitting device having excellent current spreading effect and method for manufacturing same | |
| CN102484185A (en) | Semiconductor light-emitting element and a production method therefor | |
| EP2400571A1 (en) | Light-emitting diode, light-emitting diode lamp, and method for producing light-emitting diode | |
| CN101794849B (en) | Wet etching stripping method of SiC-substrate GaN-based LED | |
| WO2006011672A1 (en) | Positive electrode for semiconductor light-emitting device | |
| JP6094819B2 (en) | Semiconductor light emitting device and manufacturing method thereof | |
| CN101494268A (en) | Method for manufacturing vertical light-emitting diode with current blocking structure | |
| CN102332521A (en) | GaN (gallium nitride)-based LED (light-emitting diode) with N-type electrodes in dotted distribution and manufacturing method thereof | |
| CN103887384B (en) | A kind of light-emitting component and its manufacture method with reflection and current blocking characteristic | |
| TW201546903A (en) | Semiconductor light-emitting element and method for manufacturing same | |
| CN102751409B (en) | A kind of vertical gallium nitride Light-emitting Diode And Its Making Method | |
| CN202855792U (en) | Flip-chip type light-emitting diode | |
| TWI281758B (en) | Transparent positive electrode | |
| Wang et al. | High-performance nitride vertical light-emitting diodes based on Cu electroplating technical route | |
| CN102779914A (en) | Vertical light-emitting diode with current blocking effect and manufacturing method thereof | |
| JP2006024913A (en) | Translucent positive electrode for compound semiconductor light-emitting device of gallium nitride series, and the light-emitting device | |
| JP5630276B2 (en) | Semiconductor light emitting element, semiconductor light emitting device | |
| JP5557648B2 (en) | Light emitting diode, light emitting diode lamp, and lighting device | |
| CN102280551B (en) | Light-emitting diode and manufacture method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231016 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |