CN105974505B - A kind of temperature sensing long wave leads to infrared fileter and preparation method thereof - Google Patents
A kind of temperature sensing long wave leads to infrared fileter and preparation method thereof Download PDFInfo
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- CN105974505B CN105974505B CN201610588840.3A CN201610588840A CN105974505B CN 105974505 B CN105974505 B CN 105974505B CN 201610588840 A CN201610588840 A CN 201610588840A CN 105974505 B CN105974505 B CN 105974505B
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- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000012528 membrane Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 230000005540 biological transmission Effects 0.000 claims abstract description 11
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 5
- 230000003287 optical effect Effects 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 8
- 238000005457 optimization Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 239000005083 Zinc sulfide Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000013024 troubleshooting Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Filters (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The present invention relates to infrared fileters, and in particular to a kind of temperature sensing long wave leads to infrared fileter and preparation method thereof.Base material selects single crystalline Si, refractive index n=3.42881；High-index material selects Ge, refractive index n=4.16422；Low-index material selects ZnS, refractive index n=2.2.Deposit the membrane system of different central wavelengths respectively on two surfaces of substrate.5500~14000nm long wave provided by the invention leads to infrared fileter, half height point wavelength positions 5500 ± 1%nm, cut-off region transmitance is less than 0.2%, the transmitance of transmission area is up to 90% or more, greatly improve signal-to-noise ratio, inhibit other interference well, improves the precision and efficiency of instrument temperature detection.
Description
Technical field
The present invention relates to infrared fileters, and in particular to a kind of temperature sensing long wave leads to infrared fileter and its preparation side
Method.
Background technique
Since infrared temperature-test technology has the characteristics that fast response time, accurate, convenient and long service life, in metallurgy, electricity
The industries such as son, petrochemical industry, traffic, the energy, rubber, food are used widely, and enterprise's fault detection, control of product quality are become
With the important means increased economic efficiency.The cardinal principle of infrared measurement of temperature is all to issue infra-red radiation using any object, from
And can not contact at a distance, or not is accurate, real-time, fast, in the case where not having a power failure, not sampling, do not disintegrate on-line monitoring and
Troubleshooting.Simultaneously, it is possible to reduce the damage to equipment avoids loss caused by stop work and production, saves manpower and financial resources, certain
Field can also reduce the harm to the person, have great significance for the modernization of every profession and trade.
Infrared filter is the key component of infrared radiation thermometer photodetector in infrared temperature-test technology, can by optical filter
So that photodetector excludes various gas molecules and other influences factor in environment, accurately receives certain objects and correspond to wave band
Infrared energy, improve the precision of measurement.
But just lead to infrared fileter, passband transmissivity currently used for 5500~14000nm long wave of temperature sensing
Lower, cut-off wave band is not wide enough, so measurement accuracy, stability and jamproof ability be there are also to be hoisted, poor sensitivity,
It is not able to satisfy the needs of market development.
Summary of the invention
It is high that a kind of transmission area transmitance is provided the purpose of the present invention is to solve above-mentioned the deficiencies in the prior art, cut-off
Qu Kuan can greatly improve signal-to-noise ratio, and the 5500~14000nm long wave for effectively detecting temperature leads to infrared fileter and its production side
Method.
To achieve the goals above, a kind of temperature sensing long wave designed by the present invention leads to infrared fileter and its preparation
Method, it is characterized in that:
(1) substrate is made using single crystalline Si, silicon twin polishing, 300 ± 10 μm of thickness, crystal orientation<100>.
(2) Coating Materials selects zinc sulphide ZnS and monocrystalline germanium Ge, and it is thin to deposit multi-coated interference respectively on two surfaces of substrate
Film.
(3) one face mask series use: with Sub/0.3L (0.5HL0.5H)6 0.3L 0.73(0.5HL0.5H)60.3L/Air,
Central wavelength lambda1=4500nm is initial configuration, utilizes Refinement mould in Film Design software Essential Macloed
Block Simpex parameters and Optimac parameters optimize to obtain Sub/
0.21L2.1H0.57L0.62H0.61L0.24H0.91L0.58H2.3L0.83H0.91L0.86H0.98L1.02H0.72L1.01
H0.97L0.92H0.91L1.5H0.95L3H0.7L0.91H0.8L2.1H0.56L2.74H0. 12L/Air membrane system.
(4) another face mask series use: with Sub/ (0.5HL0.5H)6 0.75(0.5HL0.5H)6/ Air, central wavelength lambda2=
2400nm is initial configuration, utilizes Refinement module Simpex in Film Design software Essential Macloed
Parameters and Optimac parameters optimizes to obtain Sub/
0.57H1.5L0.92H0.71L0.64H0.91L0.58H1.3L0.83H0.91L0.86H0.98L1.02H0.32L0.64H0.78
L0.72H0.81L0.59H0.75L0.68H0.75L0.71H0.75L0.75H0.76L0.74H 0.32L/Air membrane system.
It is substrate that symbol meaning, which is respectively as follows: Sub, in membrane system, and Air is air, and H and L respectively represent film layer Ge (high refractive index
Material layer) and film layer ZnS (low refractive index material layer) 1/4 wave optical thickness, central wavelength lambda1=4500nm, λ2=
2400nm, 1H=(4nHd)/λ；1L=(4nLD)/λ, number is the thickness coefficient of film layer, the index in structural formula in structural formula
It is the periodicity of membrane stack plated film.
A kind of above-mentioned temperature sensing long wave leads to infrared fileter and preparation method thereof, using monocrystalline silicon Si as substrate, sulphur
Change zinc ZnS and germanium Ge is Coating Materials, prepares film plating layer using the method that vacuum thermal evaporation film deposits, Ge selects electron beam to steam
Plating, deposition rate areZnS selects porous molybdenum boat resistance heating vapor deposition, and deposition rate isIt is true to start vapor deposition
Reciprocal of duty cycle is 1.0 × 10-3Pa, depositing temperature are 130 DEG C.
A kind of above-mentioned temperature sensing long wave leads to infrared fileter and preparation method thereof, controls film using optical monitor
Thickness degree, and it is aided with quartz-crystal control control deposition rate.
A kind of above-mentioned temperature sensing long wave leads to the 5500~14000nm long that infrared fileter and preparation method thereof obtains
Wave leads to infrared fileter, and a face mask series use Sub/0.3L (0.5HL0.5H)6 0.3L 0.73(0.5HL0.5H)60.3L/Air,
Central wavelength lambda1=4500nm is initial configuration, utilizes Refinement mould in Film Design software Essential Macloed
It is Sub/ after block Simpex parameters and Optimac parameters optimization
0.21L2.1H0.57L0.62H0.61L0.24H0.91L0.58H2.3L0.83H0.91L0.86H0.98L1.02H0.72L1.01
H0.97L0.92H0.91L1.5H0.95L3H0.7L0.91H0.8L2.1H0.56L2.74H0. 12L/Air is coated with realization
2700nm~5500nm cut-off, 5500nm~14000nm transmission；Another face mask series use: Sub/ (0.5HL0.5H)6 0.75
(0.5HL0.5H)6/ Air, central wavelength lambda2=2400nm is initial configuration, utilizes Film Design software Essential
It is Sub/ after Refinement module Simpex parameters and Optimac parameters optimizes in Macloed
0.57H1.5L0.92H0.71L0.64H0.91L0.58H1.3L0.83H0.91L0.86H0.98L1.02H0.32L0.64H0.78
L0.72H0.81L0.59H0.75L0.68H0.75L0.71H0.75L0.75H0.76L0.74H 0.32L/Air is coated with realization
1500nm~2800nm cut-off, 5500nm~14000nm transmission；Two sides cooperation, final to realize, 1500nm~5500nm is average saturating
It is 90.47% that cross rate, which be 0.19%, 5500nm~14000nm mean transmissivity, can greatly improve signal-to-noise ratio, can be very good
Inhibit the interference of the influence factors such as environment, product optical property and physical strength are well positioned to meet actual operation requirements, extensively
Applied to infrared temperature sounder device, improve instrument detection accuracy and efficiency, can accomplish more rapidly, more accurately detect temperature
Angle value.
Compared with the prior art, the present invention has the following advantages:
1, optical filter is compared with traditional technology method, with long wave lead to the transmitance of 5500nm~14000nm wave band >
90%, cut-off region 1500nm~5500nm wave band average transmittance < 0.2%, therefore effective work of 5500nm~14000nm
Wave band can be as big as possible transmission, and the background noise of remaining invalid wave band then greatly reduces, thus can obtain excellent
Different signal-to-noise ratio improves the measurement sensitivity and precision of instrument.
2, filter technology prepared by the present invention is simple, can form batch production, and performance is stablized, and meets high-precision temperature
The performance requirement of infrared acquisition instrument.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of temperature sensing infrared fileter of the present invention；
Wherein: substrate 1 is single crystalline Si, and film material 2 is Ge, and film material 3 is ZnS.
Fig. 2 is temperature sensing optical filter final performance measured curve figure.
Specific embodiment
Present invention will be further explained below with reference to the attached drawings and examples.
Embodiment 1:
As shown in Figure 1, a kind of temperature sensing provided in this embodiment leads to infrared fileter with long wave is:
(1) substrate is made using the single crystalline Si having a size of 50.8 × 0.3mm of Φ, silicon twin polishing is 300 ± 10 μm of thickness, brilliant
To<100>.
(2) Coating Materials selects zinc sulphide ZnS and monocrystalline germanium Ge, and it is thin to deposit multi-coated interference respectively on two surfaces of substrate
Film.
(3) one face mask series use: with Sub/0.3L (0.5HL0.5H)6 0.3L 0.73(0.5HL0.5H)60.3L/Air,
Central wavelength lambda1=4500nm is initial configuration, utilizes Refinement mould in Film Design software Essential Macloed
Block Simpex parameters and Optimac parameters optimize to obtain Sub/
0.21L2.1H0.57L0.62H0.61L0.24H0.91L0.58H2.3L0.83H0.91L0.86H0.98L1.02H0.72L1.01
H0.97L0.92H0.91L1.5H0.95L3H0.7L0.91H0.8L2.1H0.56L2.74H0. 12L/Air membrane system.
(4) another face mask series use: with Sub/ (0.5HL0.5H)6 0.75(0.5HL0.5H)6/ Air, central wavelength lambda2=
2400nm is initial configuration, utilizes Refinement module Simpex in Film Design software Essential Macloed
Parameters and Optimac parameters optimizes to obtain Sub/
0.57H1.5L0.92H0.71L0.64H0.91L0.58H1.3L0.83H0.91L0.86H0.98L1.02H0.32L0.64H0.78
L0.72H0.81L0.59H0.75L0.68H0.75L0.71H0.75L0.75H0.76L0.74H 0.32L/Air membrane system.
It is substrate that symbol meaning, which is respectively as follows: Sub, in membrane system, and Air is air, and H and L respectively represent film layer Ge (high refractive index
Material layer) and film layer ZnS (low refractive index material layer) 1/4 wave optical thickness, central wavelength lambda1=4500nm, λ2=
2400nm, 1H=(4nHd)/λ；1L=(4nLD)/λ, number is the thickness coefficient of film layer, the index in structural formula in structural formula
It is the periodicity of membrane stack plated film.
A kind of temperature sensing long wave provided in this embodiment leads to infrared fileter and preparation method thereof, is with monocrystalline silicon Si
Substrate, zinc sulphide ZnS and germanium Ge are Coating Materials, prepare film plating layer using the method that vacuum thermal evaporation film deposits, Ge is selected
Electron beam evaporation plating, deposition rate areZnS selects porous molybdenum boat resistance heating vapor deposition, and deposition rate isIt opens
The vapor deposition vacuum degree that begins is 1.0 × 10-3Pa, depositing temperature are 130 DEG C.
It is those skilled in the art due to specifically how to evaporate using electron gun evaporation and using resistance heating evaporation plated film
The routine techniques grasped, no further details to be given herein.
A kind of this patent optical filter one side provided in this embodiment is used with central wavelength lambda1=4500nm, Sub/0.3L
(0.5HL0.5H)6 0.3L 0.73(0.5HL0.5H)60.3L/Air membrane system is initial configuration, utilizes Film Design software
In Essential Macloed after Refinement module Simpex parameters and Optimac parameters optimization
Obtain Sub/0.21L2.1H0.57L0.62H0.61L0.24H0.91L0.58H2.3L0.83H0.91 L0.86H0.98L1.02H0.7
2L1.01H0.97L0.92H0.91L1.5H0.95L3H0.7L0.91H0.8L2.1H0.56L2 .74H0.12L/Air membrane system, plating
Membrane system realizes 2700nm~5500nm cut-off, 5500nm~14000nm transmission after system optimization；It is used on one side with central wavelength lambda2=
2400nm, Sub/ (0.5HL0.5H)6 0.75(0.5HL0.5H)6/ Air membrane system is initial configuration, utilizes Film Design software
Refinement module Simpex parameters and Optimac parameters optimizes in Essential Macloed
Sub/0.57H1.5L0.92H0.71L0.64H0.91L0.58H1.3L0.83H0.91L0.86H0.98L1.02H0.32L0.64H
0.78L0.72H0.81L0.59H0.75L0.68H0.75L0.71H0.75L0.75H0.76L0 .74H0.32L/Air membrane system, plating
Membrane system realizes that cut-off region wave has effectively been widened in 1500nm~2800nm cut-off, 5500nm~14000nm transmission after system optimization
Section, while the transmissivity of transmission area and the cut-off depth of cut-off region are improved, it is filtered out while improving valid signal strengths
Wavelength improves instrument detection accuracy and sensitivity in 5500nm infrared energy below.
Temperature sensing long wave provided in this embodiment leads to infrared fileter, controls film layer using optical monitor to membrane system
Thickness, and it is aided with quartz-crystal control control deposition rate.
Prepared optical filter is surveyed using German 70 type Fourier infrared spectrograph of Bruker company VERTEX
Examination.The optical filter final performance measured curve figure of this optical filter final performance structure such as Fig. 2:
1. half height point wavelength X=5500 ± 1%nm；
2. the T of transmission area 5500nm~14000nmavg=90.47%；
3. the T of cut-off region 1500nm~5500nmavg=0.19%；
The above is only presently preferred embodiments of the present invention, is not intended to limit the invention in any way, it is all according to the present invention
Technical spirit any simple modification, change and equivalent structure transformation to the above embodiments, still fall within skill of the present invention
In the protection scope of art scheme.
Claims (4)
1. a kind of temperature sensing long wave leads to infrared fileter, it is characterised in that:
(1) substrate is made using single crystalline Si, silicon twin polishing, 300 ± 10 μm of thickness, crystal orientation<100>；
(2) Coating Materials selects zinc sulphide ZnS and monocrystalline germanium Ge, deposits multilayer interference film respectively on two surfaces of substrate；
(3) one face mask series use: with Sub/0.3L (0.5HL0.5H)6 0.3L 0.73(0.5HL0.5H)60.3L/Air, center
Wavelength X1=4500nm is initial configuration, utilizes Refinement module Simpex in Film Design software Essential Macloed
Parameters and Optimac parameters optimizes to obtain Sub/0.21L2.1H0.57L0.62H0.61L0.24H0.91L0.58H2
.3L0.83H0.91L0.86H0.98L1.02H0.72L1.01H0.97L0.92H0.91L1.5H0.95L3H0.7L0.91H0.8L
2.1H0.56L2.74H0.12L/Air membrane system；
(4) another face mask series use: with Sub/ (0.5HL0.5H)6 0.75(0.5HL0.5H)6/ Air, central wavelength lambda2=
2400nm is initial configuration, utilizes Refinement module Simpex in Film Design software Essential Macloed
Parameters and Optimac parameters optimizes to obtain Sub/0.57H1.5L0.92H0.71L0.64H0.91L0.58H1.3
L0.83H0.91L0.86H0.98L1.02H0.32L0.64H0.78L0.72H0.81L0.59H0.75L0.68H0.75L0.71H0
.75L0.75H0.76L0.74H0.32L/Air membrane system；
It is substrate that symbol meaning, which is respectively as follows: Sub, in membrane system, and Air is air, H and L respectively represent high-index material film layer Ge and
1/4 wave optical thickness of low-index material film layer ZnS, central wavelength lambda1=4500nm, λ2=2400nm, 1H=
(4nHd)/λ；1L=(4nLD)/λ, number is the thickness coefficient of film layer in structural formula, the index in structural formula is membrane stack plated film
Periodicity.
2. a kind of temperature sensing long wave as described in claim 1 leads to infrared fileter, it is characterised in that: steamed using Vacuum Heat
The method of hair film deposition prepares film plating layer, and Ge selects electron beam evaporation plating, and deposition rate isZnS selects porous molybdenum boat
Resistance heating vapor deposition, deposition rate areStart that vacuum degree is deposited to be 1.0 × 10-3Pa, depositing temperature are 130 DEG C.
3. a kind of temperature sensing broadband infrared optical filter as claimed in claim 2, it is characterised in that: use optical monitor
Thicknesses of layers is controlled, and is aided with quartz-crystal control control deposition rate.
4. a kind of temperature sensing broadband infrared optical filter as described in claim 1, it is characterised in that: a face mask series use
Sub/0.3L(0.5HL0.5H)6 0.3L 0.73(0.5HL0.5H)60.3L/Air, central wavelength lambda1=4500nm is initial knot
Structure, using Refinement module Simpex parameters in Film Design software Essential Macloed and
It is Sub/0.21L2.1H0.57L0.62H0.61L0.24H0.91L0.58H2.3L0.83 after Optimac parameters optimization
H0.91L0.86H0.98L1.02H0.72L1.01H0.97L0.92H0.91L1.5H0.95L3H0.7L0.91H0.8L2.1H0.5
6L2.74H0.12L/Air is coated with and realizes 2700nm~5500nm cut-off, 5500nm~14000nm transmission；Another face mask series are adopted
With: Sub/ (0.5HL0.5H)6 0.75(0.5HL0.5H)6/ Air, central wavelength lambda2=2400nm is initial configuration, utilizes membrane system
Refinement module Simpex parameters and Optimac in design software Essential Macloed
It is Sub/0.57H1.5L0.92H0.71L0.64H0.91L0.58H1.3L0.83H0.91L0.86 H0. after parameters optimization
98L1.02H0.32L0.64H0.78L0.72H0.81L0.59H0.75L0.68H0.75L0.71H0.75L0.75H0.76L0.74
H0.32L/Air is coated with and realizes 1500nm~2800nm cut-off, 5500nm~14000nm transmission；Two sides cooperation, it is final to realize,
1500nm~5500nm mean transmissivity is that 0.19%, 5500nm~14000nm mean transmissivity is 90.47%, can be greatly
Improve signal-to-noise ratio.
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| CN106324738B (en) * | 2016-11-04 | 2019-02-01 | 天津津航技术物理研究所 | A kind of LONG WAVE INFRARED optical filter and preparation method thereof |
| CN110146948B (en) * | 2018-11-26 | 2021-05-11 | 上海欧菲尔光电技术有限公司 | Silicon substrate long-wave pass infrared filter and preparation method thereof |
| CN111323861B (en) * | 2020-05-13 | 2021-12-03 | 翼捷安全设备（昆山）有限公司 | Infrared filter for acetylene gas detection, preparation method and application thereof |
| CN112230325B (en) * | 2020-10-29 | 2022-11-04 | 沈阳仪表科学研究院有限公司 | Periodic symmetric structure optical filter for inhibiting advanced sub-reflection short wave pass filter |
| CN113670441A (en) * | 2021-08-11 | 2021-11-19 | 中国科学院光电技术研究所 | Long-wave infrared multispectral imaging device based on filter array and design method thereof |
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| CN202305860U (en) * | 2012-03-12 | 2012-07-04 | 杭州麦乐克电子科技有限公司 | Infrared filter capable of transmitting 5,500 nanometer long wave |
| CN103698830B (en) * | 2013-11-29 | 2016-02-10 | 杭州麦乐克电子科技有限公司 | The initial thermometric optical filter by wavelength 5700nm |
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|---|---|
| CN105974505A (en) | 2016-09-28 |
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