CN102928460A - Film heat flux sensor and preparation method thereof - Google Patents
Film heat flux sensor and preparation method thereof Download PDFInfo
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- CN102928460A CN102928460A CN2012104150600A CN201210415060A CN102928460A CN 102928460 A CN102928460 A CN 102928460A CN 2012104150600 A CN2012104150600 A CN 2012104150600A CN 201210415060 A CN201210415060 A CN 201210415060A CN 102928460 A CN102928460 A CN 102928460A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
- G01K7/028—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples using microstructures, e.g. made of silicon
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Abstract
The invention discloses a film heat flux sensor and a preparation method thereof. The film heat flux sensor is characterized in that a high temperature-resistant film thermocouple array (thermopile) is prepared on the surface of a substrate by a micromachining technology; a thick heat barrier layer and a thin heat barrier layer are arranged on the high temperature-resistant film thermocouple array; and through sensing the difference between temperatures under the thick heat barrier layer and the thin heat barrier layer, the film heat flux sensor can measure a heat flux according to the height difference of the thick heat barrier layer and the thin heat barrier layer. The film heat flux sensor can measure heat fluxes of middle and outer layer materials of a high-speed aircraft in flight and provides data reference for a heat protection design. The preparation method has simple processes and a reliable structure.
Description
Technical field
The invention belongs to film special sensor technical field, be specifically related to a kind of thin film sensor based on micromachining technology and preparation method thereof.More particularly, the present invention relates to a kind of film thermal flow sensor and preparation method thereof, by the measurement of film thermopile realization hot-fluid, this film thermal flow sensor manufacturing process is simple, and the response time is fast, has higher measuring accuracy.
Background technology
Aircraft or guided missile model are at the high-speed wind tunnel testing experiment, need to carry-on each the point under the different Mach number with different angle of attack states under the situation of being heated carry out test analysis, accurately calculate the mechanical property of material under heating status, in order to select suitable material, and take the solar heat protection measure, ensure the reliable high-speed flight of aircraft security.How accurately, Quick Measuring measures the surface heat flow amount, is the condition precedent of reliable design heat-protection system.For a long time, the heat flux transmission is measured by temperature variation is detected to realize.
Owing to limited by aircraft skin structure, adopt traditional take temperature degree installation of sensors difficulty, and broken outer aircraft skin structure shape.Therefore, need a kind of heat flux sensor to measure at flight course housing material hot-fluid high-speed aircraft.At present, what the aircraft surface heat flow measurement was adopted is to arrange that in case surface temperature sensor detects the temperature difference of diverse location, extrapolates heat flow density, has that volume is large, the response time waits shortcoming slowly.
Patent CN102175339 A has described a kind of internal transient film heat-flow sensor of fuel cell, adopts behind sputter thermoresistance layer above the film thermocouple again sputtered film thermopair, measurement be temperature difference in the Different Plane.This mounting means is measured the true hot-fluid that resulting temperature is not outside surface, and manufacturing process is complicated than the present invention.
Adopt film thermal flow sensor of the present invention, that the thermal barrier coatings by the sputter different-thickness changes temperature difference on same surface, realize the heat flux distribution measurement of aircraft skin in the high-speed flight process, because film thermal flow sensor volume is little, do not destroy the overall thermal Flow Field Distribution, can realize real-time, Measurement accuracy.Film thermal flow sensor of the present invention is simple in structure, easy to use.
Summary of the invention
The present invention is intended to propose a kind of film thermal flow sensor and preparation method thereof, can realize the measurement to the aircraft surface hot-fluid, this heat flux sensor adopts existing maturation process technology and material substantially, production technology is simple, easy for installation, can not affect the Flight Vehicle Structure reliability, have good anti-environmental interference ability and reliability level.
In order to achieve the above object, technical scheme provided by the invention is:
Referring to Fig. 1, described film thermal flow sensor 1 comprises substrate 2, is located at the transition bed 3 on the substrate 2, is located at the film thermocouple array on the transition bed 3; Described film thermocouple array is by comprising A electrode 4(such as PtRh13 electrode more than two) and B electrode 5(such as Pt electrode) film thermocouple 10 consist of by outer contact 11 series connection; The contact of described A electrode 4 and B electrode 5 is provided with thick thermal barrier coatings 6; Described outer contact 11 is provided with thin thermal barrier coatings 7; Two external connection end of the plural film thermocouple 10 of described series connection are connected (referring to Fig. 1) through the self-corresponding compensating wire 8 of a pad 9 and each respectively.
Wherein, described substrate 2 materials are Al
2O
3Pottery, its diameter are 50mm～150mm, thickness 0.5mm～1mm; Described transition bed 3 materials are Ta
2O
5, thickness is 0.05 μ m～0.1 μ m; The thickness of described film thermocouple 10 is 0.2 μ m～0.5 μ m; Described thin thermal barrier coatings 7 materials are SiO
2, Al
2O
3Or AlN, be preferably SiO
2, thickness is 0.5 μ m～1 μ m.Described thickness thermal barrier coatings 6 materials are SiO
2, Al
2O
3Or AlN, be preferably SiO
2, thickness is 3 μ m～10 μ m.Described film thermocouple 10 is occasionally S type thermopair of R type thermopair, Type B thermoelectricity, is preferably R type thermopair.
Film thermal flow sensor 1 can be fixedly installed in aircraft skin, realize the measurement of heat flux distribution in the high-speed flight process.
The preparation method of said film heat flux sensor comprises the steps:
(1) cleans substrate, remove substrate surface greasy dirt and impurity;
(2) the stainless steel mask with substrate and film thermocouple A electrode is set in together, and clips on the planet carrier that is placed on the deposition plating system with the stainless steel anchor clamps;
(3) successively at the membraneous material of substrate surface deposition transition layer film and film thermocouple A electrode, take off the stainless steel mask; Wherein transition layer film is in order to strengthening the adhesion of thermopair film and substrate layer, and strengthens thermopair film stability at high temperature;
(4) the stainless steel mask plate with substrate and film thermocouple B electrode is set in together, and clips on the planet carrier that is put in the deposition plating system with the stainless steel anchor clamps;
(5) successively at the membraneous material of substrate surface deposition transition layer film and film thermocouple B electrode; Take off the stainless steel mask;
(6) the stainless steel mask plate with substrate and thin thermal barrier coatings material is set in together and is put on the planet carrier of deposition plating system;
(7) the thermal barrier coatings membraneous material of the outer contact position deposition of thin of adjacent two film thermocouple series connection place on substrate; Take off the stainless steel mask;
(8) the stainless steel mask plate with substrate and thick thermal barrier coatings material is set in together and is put on the planet carrier of deposition plating system;
(9) the connecting point position deposition of thick thermal barrier coatings membraneous material of same film thermocouple A electrode and B electrode on substrate; Take off the stainless steel mask;
(10) will put into the high-temperature atmosphere annealing furnace through the film thermocouple substrate that above-mentioned steps is made, the thermopair film for preparing will be carried out annealing in process, the galvanic couple membrane structure is tended towards stability;
(11) utilize the microtome section to make the film thermal flow sensor;
(12) with two external connection end of the plural film thermocouple of connecting on the film thermal flow sensor respectively with each self-corresponding compensating wire at the pad place by sintering or be weldingly connected.
Wherein, the described annealing temperature of step (10) is 600 ℃～800 ℃, and annealing atmosphere is vacuum, and annealing time is 0.5～1 hour.
Below in conjunction with the design and principle of work the invention will be further described:
The film thermal flow sensor that the present invention proposes, comprise substrate, be located at on-chip transition bed, be provided with the film thermocouple array (film thermopile) on the transition bed, described film thermocouple array is provided with thermal barrier coatings, and described film thermocouple array is made of plural film thermocouple series connection, can require design modifying thermopair number according to actual measurement, to satisfy different measuring accuracy requirements, described film thermocouple comprises compensating lead wire.Through calibrated heat flux sensor, in measuring process, by signal pickup assembly the output signal of film thermopile is carried out Real-time Collection, obtain the output signal of film thermopile and the relation between the hot-fluid, realize aircraft outer surface heat current density distribution measuring.Like this, film thermal flow sensor of the present invention has realized the real-time measurement of flight course housing surface heat flow.
Wherein, described substrate material is Al
2O
3Pottery, its diameter are 50mm～150mm, thickness 0.5mm～1mm; Described buffer layer material is Ta
2O
5, thickness is 0.05 μ m～0.1 μ m; Described thermopair is a kind of of R type thermopair, Type B thermopair, S type thermopair, preferred R type thermopair, and its thickness is 0.1 μ m～0.2 μ m; Described thermal barrier coatings material selection SiO
2Further, the film thermocouple array is made of the multiple row film thermocouple that is no less than 2 row, the film thermal barrier coatings is as impact and determine one of deciding factor of heat flow measurement precision, can be according to the difference in height between product performance and thick, the thin thermal barrier coatings of requirement decision, to obtain different properties of product.
Compared with prior art, the invention has the beneficial effects as follows:
A) the present invention adopts ripe technology and material, prepared a cluster film thermoelectric pile (film thermocouple array) at substrate surface, when aircraft flight, thermopair under the thickness thermal barrier coatings of differing heights obtains temperature difference, can draw by the Fourier transform analysis heat flux distribution of outside surface;
B) the present invention adopts the micromachining technologies such as sputter-deposition technology, stainless steel mask technique, resistance welding technology, be conducive to improve the consistance of processing technology and the reliability level of working sensor, and can realize the batch production of film thermal flow sensor effectively reducing manufacturing cost;
C) the present invention utilizes micromachining technology can make simultaneously hundreds of thousands of film thermal flow sensor on a slice substrate, improves the controllability level of working (machining) efficiency, machining reproducibility and processing dimension, and greatly reduces manufacturing cost.
Description of drawings
Fig. 1 is film thermal flow sensor structural representation of the present invention;
Fig. 2 is film temperature hot-fluid compound sensor preparation technology process flow diagram of the present invention.
Among the figure: 1, film thermal flow sensor; 2, substrate; 3, transition film; 4, A electrode; 5, B electrode; 6, thick thermal barrier coatings; 7, thin thermal barrier coatings; 8, compensating wire; 9, pad; 10, film thermocouple; 11, outer contact.
Embodiment
Referring to Fig. 1, described film thermal flow sensor 1 comprises substrate 2, is located at the transition bed 3 on the substrate 2, is located at the film thermocouple array on the transition bed 3; Described film thermocouple array is made of by outer contact 11 series connection the film thermocouple 10 that comprises A electrode 4 and B electrode 5 more than two; The contact of described A electrode 4 and B electrode 5 is provided with thick thermal barrier coatings 6; Described outer contact 11 is provided with thin thermal barrier coatings 7; Two external connection end of the plural film thermocouple 10 of described series connection are connected (referring to Fig. 1) through the self-corresponding compensating wire 8 of a pad 9 and each respectively.
Wherein, described substrate 2 materials are Al
2O
3Pottery, its diameter are 50mm～150mm, thickness 0.5mm～1mm; Described transition bed 3 materials are Ta
2O
5, thickness is 0.05 μ m～0.1 μ m; The thickness of described film thermocouple 10 is 0.2 μ m～0.5 μ m; Described thin thermal barrier coatings 7 materials are SiO
2, thickness is 0.5 μ m～1 μ m.Described thickness thermal barrier coatings 6 materials are SiO
2, thickness is 3 μ m～10 μ m.Described film thermocouple 10 is R type PtRh13-Pt thermopair.
Referring to Fig. 2, described film thermal flow sensor preparation method may further comprise the steps:
(1) to the Al of diameter 50mm～150mm, thickness 0.5mm～1mm
2O
3Substrate cleans, and removes the greasy dirt of substrate polished surface and impurity and stains etc.;
(2) the stainless steel mask with substrate and R type PtRh13-Pt thermopair PtRh13 electrode is set in together, and clips on the planet carrier of putting into ion beam sputtering film coating machine with the stainless steel anchor clamps;
(3) utilize the Ta of ion beam sputter depositing thickness 0.05 μ m～0.1 μ m
2O
5The PtRh13 thermopair film of transition film and 0.1 μ m～0.2 μ m takes off the stainless steel mask;
(4) the stainless steel mask with substrate and R type PtRh13-Pt thermopair Pt electrode is set in together, and clips on the planet carrier of putting into ion beam sputtering film coating machine with the stainless steel anchor clamps;
(5) utilize the Ta of ion beam sputter depositing thickness 0.05 μ m～0.1 μ m
2O
5The Pt thermopair film of transition film and 0.1 μ m～0.2 μ m takes off the stainless steel mask;
(6) the stainless steel mask with film thermocouple substrate and thin thermal barrier coatings is set in together, and puts on the planet carrier of ion beam deposition machine, and the outer contact position of adjacent two film thermocouple series connection place on substrate deposits 0.5 μ m～thick SiO of 1 μ m
2Film;
(7) the stainless steel mask with film thermocouple substrate and thick thermal barrier coatings is set in together, and puts on the planet carrier of ion beam deposition machine, and the connecting point position of same film thermocouple A electrode and B electrode deposits 3 μ m～thick SiO of 10 μ m on substrate
2Film;
(8) will put into the high-temperature atmosphere annealing furnace through the film thermocouple substrate that above-mentioned steps is made, under 600 ℃～800 ℃ conditions, carry out vacuum annealing 0.5～1 hour;
(9) use the scribing machine scribing, the film thermal flow sensor is cut apart moulding;
(10) adopting resistance welder to finish respectively film thermocouple external connection end PtRh13 electrode at the pad place is being connected of 75 μ m PtRh13 compensating lines with diameter, and being connected of the Pt compensating line of film thermocouple external connection end Pt electrode and diameter 75 μ m.
So far, finish the preparation of film thermal flow sensor of the present invention.Can installation of sensors is inner in sheathing material at aircraft skin or buried regions, realize the measurement of hot-fluid parameter in the high-speed flight process.
The content that above-described embodiment is illustrated should be understood to these embodiment and only is used for being illustrated more clearly in the present invention, limit the scope of the invention and be not used in, after having read the present invention, those skilled in the art all fall within the application's claims limited range to the modification of the various equivalent form of values of the present invention.
Claims (8)
1. a film thermal flow sensor is characterized in that, its (1) comprises substrate (2), is located at the transition bed (3) on the substrate (2), is located at the film thermocouple array on the transition bed (3); Described film thermocouple array is made of by outer contact (11) series connection the film thermocouple (10) that comprises A electrode (4) and B electrode (5) more than two; The contact of described A electrode (4) and B electrode (5) is provided with thick thermal barrier coatings (6); Described outer contact (11) is provided with thin thermal barrier coatings (7); Two external connection end of the plural film thermocouple (10) of described series connection are connected with each self-corresponding compensating wire (8) through a pad (9) respectively; Described substrate (2) material is Al
2O
3Pottery; Described transition bed (3) material is Ta
2O
5
2. film temperature hot-fluid compound sensor as claimed in claim 1 is characterized in that, described substrate (2) diameter is 50mm～150mm, thickness 0.5mm～1mm; Described transition bed (3) thickness is 0.05 μ m～0.1 μ m; The thickness of described film thermocouple (10) is 0.2 μ m～0.5 μ m; Described thick thermal barrier coatings (6) thickness is 3 μ m～10 μ m, and described thin thermal barrier coatings (7) thickness is 0.5 μ m～1 μ m.
3. film thermal flow sensor as claimed in claim 1 is characterized in that, described film thermocouple (10) is occasionally S type thermopair of R type thermopair, Type B thermoelectricity.
4. film thermal flow sensor as claimed in claim 3 is characterized in that, described film thermocouple (10) is R type thermopair.
5. film thermal flow sensor as claimed in claim 1 is characterized in that, the material of described thick thermal barrier coatings (6) and thin thermal barrier coatings (7) is SiO
2, Al
2O
3Or AlN.
6. the preparation method such as film thermal flow sensor as described in one of claim 1～5 comprises the steps:
(1) cleans substrate;
(2) the stainless steel mask with substrate and film thermocouple A electrode is set in together and is put on the planet carrier of deposition plating system;
(3) successively at the membraneous material of substrate surface deposition transition layer film and film thermocouple A electrode, take off the stainless steel mask;
(4) the stainless steel mask plate with substrate and film thermocouple B electrode is set in together and is put on the planet carrier of deposition plating system;
(5) successively at the membraneous material of substrate surface deposition transition layer film and film thermocouple B electrode; Take off the stainless steel mask;
(6) the stainless steel mask plate with substrate and thin thermal barrier coatings material is set in together and is put on the planet carrier of deposition plating system;
(7) the thermal barrier coatings membraneous material of the outer contact position deposition of thin of adjacent two film thermocouple series connection place on substrate; Take off the stainless steel mask;
(8) the stainless steel mask plate with substrate and thick thermal barrier coatings material is set in together and is put on the planet carrier of deposition plating system;
(9) the connecting point position deposition of thick thermal barrier coatings membraneous material of same film thermocouple A electrode and B electrode on substrate; Take off the stainless steel mask;
(10) will put into the high-temperature atmosphere annealing furnace through the film thermocouple substrate that above-mentioned steps is made, the membraneous material for preparing will be carried out annealing in process;
(11) section makes the film thermal flow sensor;
(12) with two external connection end of the plural film thermocouple of connecting on the film thermal flow sensor respectively with each self-corresponding compensating wire at the pad place by sintering or be weldingly connected.
7. method as claimed in claim 6 is characterized in that, the described annealing temperature of step (10) is 600 ℃～800 ℃, and annealing atmosphere is vacuum.
8. method as claimed in claim 6 is characterized in that, the described annealing time of step (10) is 0.5 ~ 1 hour.
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103512682A (en) * | 2013-08-29 | 2014-01-15 | 中国电子科技集团公司第四十八研究所 | Slice array heat-flow sensor |
| CN104122010A (en) * | 2014-07-25 | 2014-10-29 | 北京卫星环境工程研究所 | Radiation heat flow measuring device |
| CN104236723A (en) * | 2014-09-30 | 2014-12-24 | 上海集成电路研发中心有限公司 | Three-dimensional thermopile infrared detector structure of MEMS (micro-electromechanical system) |
| CN105209872A (en) * | 2013-03-22 | 2015-12-30 | 沃特世科技公司 | Thermopile differential scanning calorimeter sensor |
| CN106124064A (en) * | 2016-06-02 | 2016-11-16 | 南京理工大学 | Thin film radiation heat flow transducer and preparation method thereof |
| CN106323493A (en) * | 2016-08-10 | 2017-01-11 | 清华大学 | Temperature field and heat flow density field measurement integrated device and manufacturing method therefor |
| CN109798995A (en) * | 2019-01-17 | 2019-05-24 | 上海交通大学 | A kind of flexibility high sensitivity thin-film thermocouple type heat flow transducer and preparation method |
| CN110132451A (en) * | 2019-05-10 | 2019-08-16 | 中国电子科技集团公司第四十八研究所 | A kind of heat flow transducer and preparation method thereof |
| CN111707706A (en) * | 2020-06-04 | 2020-09-25 | 西安交通大学 | Heat flux density measuring device with thermal radiation shield and method |
| WO2020232663A1 (en) * | 2019-05-22 | 2020-11-26 | Hefei Guoxuan High-Tech Power Energy Co., Ltd. | A case having a thermal barrier layer for a single cell |
| CN112284572A (en) * | 2020-10-14 | 2021-01-29 | 杭州仰仪科技有限公司 | Thermopile type heat flow sensor for tower structure differential scanning calorimeter |
| CN112432719A (en) * | 2020-11-06 | 2021-03-02 | 中国空气动力研究与发展中心超高速空气动力研究所 | Novel thermopile heat flow sensor |
| CN112577639A (en) * | 2020-10-30 | 2021-03-30 | 北京临近空间飞行器***工程研究所 | Modularized slice type heat flow identification device and measurement method |
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| CN105209872A (en) * | 2013-03-22 | 2015-12-30 | 沃特世科技公司 | Thermopile differential scanning calorimeter sensor |
| US9964454B2 (en) | 2013-03-22 | 2018-05-08 | Waters Technologies Corporation | Thermopile differential scanning calorimeter sensor |
| CN105209872B (en) * | 2013-03-22 | 2019-02-19 | 沃特世科技公司 | Thermoelectric pile differential scanning calorimeter sensor |
| CN103512682B (en) * | 2013-08-29 | 2015-09-02 | 中国电子科技集团公司第四十八研究所 | A kind of slice array heat-flow sensor |
| CN103512682A (en) * | 2013-08-29 | 2014-01-15 | 中国电子科技集团公司第四十八研究所 | Slice array heat-flow sensor |
| CN104122010A (en) * | 2014-07-25 | 2014-10-29 | 北京卫星环境工程研究所 | Radiation heat flow measuring device |
| CN104122010B (en) * | 2014-07-25 | 2017-05-10 | 北京卫星环境工程研究所 | Radiation heat flow measuring device |
| CN104236723A (en) * | 2014-09-30 | 2014-12-24 | 上海集成电路研发中心有限公司 | Three-dimensional thermopile infrared detector structure of MEMS (micro-electromechanical system) |
| CN106124064A (en) * | 2016-06-02 | 2016-11-16 | 南京理工大学 | Thin film radiation heat flow transducer and preparation method thereof |
| CN106323493B (en) * | 2016-08-10 | 2020-05-22 | 清华大学 | Temperature field and heat flow density field measurement integrated device and preparation method thereof |
| CN106323493A (en) * | 2016-08-10 | 2017-01-11 | 清华大学 | Temperature field and heat flow density field measurement integrated device and manufacturing method therefor |
| CN109798995A (en) * | 2019-01-17 | 2019-05-24 | 上海交通大学 | A kind of flexibility high sensitivity thin-film thermocouple type heat flow transducer and preparation method |
| CN110132451A (en) * | 2019-05-10 | 2019-08-16 | 中国电子科技集团公司第四十八研究所 | A kind of heat flow transducer and preparation method thereof |
| WO2020232663A1 (en) * | 2019-05-22 | 2020-11-26 | Hefei Guoxuan High-Tech Power Energy Co., Ltd. | A case having a thermal barrier layer for a single cell |
| CN113811638A (en) * | 2019-05-22 | 2021-12-17 | 合肥国轩高科动力能源有限公司 | Housing for a single cell with a heat insulation layer |
| CN113811638B (en) * | 2019-05-22 | 2024-03-05 | 合肥国轩高科动力能源有限公司 | Housing for a single cell with a heat insulation layer |
| CN111707706A (en) * | 2020-06-04 | 2020-09-25 | 西安交通大学 | Heat flux density measuring device with thermal radiation shield and method |
| CN112284572A (en) * | 2020-10-14 | 2021-01-29 | 杭州仰仪科技有限公司 | Thermopile type heat flow sensor for tower structure differential scanning calorimeter |
| CN112577639A (en) * | 2020-10-30 | 2021-03-30 | 北京临近空间飞行器***工程研究所 | Modularized slice type heat flow identification device and measurement method |
| CN112432719A (en) * | 2020-11-06 | 2021-03-02 | 中国空气动力研究与发展中心超高速空气动力研究所 | Novel thermopile heat flow sensor |
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Application publication date: 20130213 |