CN105973965A - Double battery current-type nitrogen oxide sensor chip and preparation method thereof - Google Patents
Double battery current-type nitrogen oxide sensor chip and preparation method thereof Download PDFInfo
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Abstract
The invention relates to a double battery current-type nitrogen oxide sensor chip and a preparation method thereof. The preparation method comprises carrying out curtain coating and cutting to obtain a curtain-coated substrate corresponding to each layer, wherein the nitrogen oxide sensor chip has a structure composed of the three substrates, carrying out corresponding screen printing on all the curtain-coated substrates to obtain current-type double cells composed of equal active and non-active electrodes and a common counter electrode and to obtain a heating resistor and a corresponding functional layer, overlaying all the curtain-coated substrates to obtain a chip blank, cutting the blank to obtain a single core blank, and sintering the single core blank to obtain the double battery current-type nitrogen oxide sensor, wherein in sintering, the corresponding functional layer forms a cavity after glue discharge and the cavity and a related structure form an air channel. Compared with the existing nitrogen oxide sensor chip, the double battery current-type nitrogen oxide sensor chip has the characteristics of simple preparation processes and low cost. The double battery current-type nitrogen oxide sensor chip has measuring accuracy and can simultaneously detect nitrogen oxide content and oxygen content.
Description
Technical field
The invention belongs to nitrogen oxide in automobile exhaust sensor technical field.Particularly relate to double cell electric current
Type Oxynitride sensor chip and preparation method thereof.
Background technology
Vehicle tail gas Oxynitride sensor chip is to be formed by stacking by six layers of zirconium oxide substrate at present, as
" gas sensor, NOx sensor and the method for manufacture gas sensor " (US20090242400)
Patented technology and " method of correction NOx sensor output signal " (US20080237064) patent
Technology, described patented technology by three electrochemistry oxygen pumps, two chambers, reference air duct,
One adds thermal resistance, lead-in wire and eight pins and constitutes, and three electrochemistry oxygen pumps are main pump, auxiliary respectively
Pump and measure pump, main pump at the first chamber, donkey pump and measure pump at the second chamber, the first chamber and
Linking with slit in the middle of second chamber, population structure is complicated.
The operation principle of this Oxynitride sensor chip is that tail gas is first introduced to the first chamber, and by
All of oxygen taken out by main pump；It is then introduced into the second chamber and is taken out further in tail gas by donkey pump
Oxygen, makes oxygen concentration in tail gas be down to extremely low；Then the nitrogen oxides in tail gas is measuring the activation of pump
It is decomposed into oxygen and nitrogen under electrode effect, draws corresponding nitrogen oxygen finally by the carrying current measuring pump
The content of compound.This Oxynitride sensor chip structure is complicated, and cost of manufacture is highly difficult greatly.
In recent years, Jing Gao etc. propose a kind of novel NOx sensor (J.Gao et al./
Sensors and Actuators B 154 (2011) 106 110), this NOx sensor is based on electrification
Learn principle, use zirconic ionic conductivity, and zirconium oxide is printed on alumina substrate,
Zirconic both sides print activated electrode and disactivation electrode respectively, and at activated electrode and disactivation electricity
The sensor signal of telecommunication is done by extremely upper one layer of Catalytic Layer of covering to get rid of carbon monoxide and Hydrocarbon
Disturb, thus improve the sensor selectivity to nitrogen oxides.But this novel nitrogen oxide sensor
Yet suffer from deficiency: this novel nitrogen oxide sensor yet suffers from asking in the selection of electrode material
Topic, causes its signal easily to be disturbed by carbon monoxide in vehicle exhaust and Hydrocarbon；This
Integrated oxygen sensor is not had on the substrate of novel nitrogen oxide sensor, it require that at oxygen sensor
Cooperation under work, cause during actually used cost to increase.On the other hand, active electrode
I.e. enabling and fully decompose NO, the working sensor of electric potential difference type is at quasi-balanced state, and resolution ratio is by O2
Concentration and the impact of NO concentration, analytical calculation is extremely difficult.
By contrast, the oxygen sensor of limit-current type flows down at stable state oxygen and is operated, and builds activation
Form double cell with disactivation electrode with to electrode, disactivation electrode only pumps out in tested atmosphere
O2Activated electrode pumps out the O in tested atmosphere the most simultaneously2Gained O is decomposed with NO2, corresponding
Carrying current also have difference, thus measure O the most easily2Content with NO.
Summary of the invention
It is contemplated that overcome prior art defect, it is therefore an objective to provide a kind of make simple and low cost
Oxynitride sensor chip and preparation method, the Oxynitride sensor chip knot prepared by the method
Structure is simple, measurement accurately and can measure amount of nitrogen oxides and oxygen content simultaneously.
For achieving the above object, the technical solution used in the present invention is:
Double cell current mode Oxynitride sensor chip, including four layers of substrate, wherein three laminar flows prolong base
Sheet prints corresponding functional layer respectively, it is characterised in that: in ground floor curtain coating substrate printed thereon equity
Activated electrode and disactivation electrode, activated electrode and disactivation electrode adjacent between print narrow-gap channel
And extraneous tested atmosphere of going directly, at activated electrode and disactivation electrode printed thereon diffusion barrier layer, the
Electrode is passed through aperture and first by electrode, reference by the reference that the back up of one laminar flow epitaxial substrate shares
The corresponding pin in laminar flow epitaxial substrate front be connected, activated electrode and disactivation electrode respectively with reference to electricity
Pole composition limit-current type double cell；At second layer curtain coating substrate above with punching or mode of printing shape
Become air duct, add thermal resistance at third layer curtain coating substrate printed thereon, add thermal resistance both sides respectively
Printing insulating barrier, adds thermal resistance and is connected with the pin of third layer curtain coating substrate back；Three laminar flows are prolonged base
After sheet overlaps successively, then in ground floor curtain coating substrate stacked, the 4th laminar flow epitaxial substrate becomes whole
Body green compact, sintering green compact prepare double cell current mode Oxynitride sensor chip.Double cell current mode
Oxynitride sensor chip is fixed in the acceptance of the bid of standard atmosphere after making, with the ECU combination matched
Work.
The preparation method of described double cell current mode Oxynitride sensor chip, it is characterised in that press
Following steps are carried out: (1) is cast activated electrode and the disactivation of substrate printed thereon equity at ground floor
Narrow-gap channel is printed, in activated electrode and non-live between electrode, activated electrode and disactivation electrode are adjacent
Polarizing electrode printed thereon diffusion barrier layer, the reference that the back up of ground floor curtain coating substrate shares is to electricity
Pole, electrode is connected by reference by the corresponding pin of aperture with ground floor curtain coating substrate front, activation electricity
Pole and disactivation electrode form limit-current type double cell with reference to electrode respectively；(2) at the second layer
Curtain coating substrate forms air duct above with punching or mode of printing, on third layer curtain coating substrate
Printing adds thermal resistance, prints insulating barrier respectively adding thermal resistance both sides, adds thermal resistance and third layer curtain coating
The pin of substrate back is connected；(3) after three laminar flow epitaxial substrates being overlapped successively, then at the first laminar flow
In epitaxial substrate stacked, the 4th laminar flow epitaxial substrate is integrally formed green compact, and cutting green compact become one single chip raw
Base；Sinter 1-3 hour through binder removal and at 1400-1500 DEG C, prepare the oxidation of double cell current mode nitrogen
Thing sensor chip.Chip is fixed in the acceptance of the bid of standard atmosphere after making, with the ECU combination matched
Work.
Printing activated electrode uses platinum rhodium slurry, and wherein in platinum rhodium slurry, platinum content is 50-99%, grain
Footpath is 0.01～0.5 μm, and rhodium content is 1-50%, and particle diameter is 0.01～0.5 μm, and platinum rhodium slurry is with suitable
Amount Organic substance solvent is mixed into the slurry meeting print request；
Printing disactivation electrode uses platinum slurry, and wherein in platinum slurry, platinum content is 50-99%,
Particle diameter is 0.01～0.5 μm, and gold content is 1-50%, and particle diameter is 0.01～0.5 μm μm；Platinum is starched
Material and appropriate Organic substance solvent are mixed into the slurry meeting print request；Activated electrode and disactivation electrode
Form obvious NOx poor catalytic activity other.
The described resistance adding thermal resistance is 2-20 ohm.
Under above-mentioned manufacturing conditions, active electrode and nonactive electrode constitute full symmetric with reference electrode
Two limit-current type double cells.Under in working order, the temperature of the two battery and atmosphere,
Diffusion parameter is identical, causes the reason of carrying current difference to only have electrode activity different, activation electricity
The NO that comes of diffusion is decomposed on surface, pole, and the size of its carrying current is proportional to oxygen concentration and NO decomposes
Oxygen concentration sum, rather than activated electrode surface is regardless of solving the NO that diffusion comes, its carrying current size is just
Than in direct oxygen concentration, the proportionality coefficient of the two diffusion is identical, and more than 500 DEG C NOx are mainly with NO
Form exists, by known NOxContent and O2The given atmosphere of content, to two battery limit electric currents
Demarcate:
After demarcating, COEFFICIENT K, zero correction Ip0 is given value, surveys two battery limit electric currents
Value Ip1 and Ip2 can be by the P of above-mentioned equation solution the unknownNOAnd PO2Value.Add thermal resistance by two
Individual battery is heated to temperature required, and temperature is controlled at certain certain value by control system, it is ensured that COEFFICIENT K
Constant.
Working barrel voltage is provided to two batteries, controls heating-up temperature, the value write control journey that will demarcate
Output signal is also processed and the ECU of engine system carries out communication by sequence, special by match
Complete with ECU.
Owing to using technique scheme, the present invention compared with prior art has a following good effect:
One, the Oxynitride sensor chip simple in construction in the present invention.Vehicle tail gas nitrogen oxidation at present
Thing sensor chip is to be formed by stacking by six layers of zirconium oxide substrate, by three electrochemistry oxygen pumps, two chambeies
Room, reference air duct, one add thermal resistance, lead-in wire and eight pins and constitute, three electrifications
Learning oxygen pump is main pump, donkey pump and measurement pump respectively, and main pump is at the first chamber, donkey pump and measurement pump
Linking with slit in the middle of the second chamber, the first chamber and the second chamber, population structure is complicated.And this
Invention structurally greatly simplifies the structure of Oxynitride sensor chip.
Two, the preparation process of the present invention is simple.Existing Oxynitride sensor chip owing to structure is complicated,
The reason that volume is little, make on the most difficult: need on zirconium oxide substrate die-cut two chambers,
One slit and a reference gas passage；The two chamber, a slit and a reference gas lead to
Road easily deforms in overlapping, compacting and the sintering process of six layers of zirconium oxide substrate, deforms serious feelings
Chamber, slit and reference gas channel blockage, cracking can be caused under condition, cause NOx sensor
Chip failure.And due to the fact that simple in construction, make preparation process obtain bigger simplification.
Three, the preparation cost of the present invention is low.Relative to existing Oxynitride sensor chip, the present invention
Preparation process is simple, saves the expense of preparation process die-cut, that overlap and suppress；Only need three layers of oxygen
Change zirconio sheet, save precious metal material, improve yield rate.
Four, the ECU that the chip of the present invention matches is simple.Three electrochemistry oxygens in original technology
The co-ordination of pump is extremely difficult, controls process complicated, and the automatically controlled list required by the chip of the present invention
Unit does not has three pump co-ordinations of complexity to control process, and two batteries also only need to give identical work simultaneously
Condition.
Therefore, the present invention has the simple and feature of low cost that makes, prepared nitrogen oxides sensing
Device chip measurement effect is good, can measure amount of nitrogen oxides.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation of the present invention；
Fig. 2 is the structural representation of embodiments of the invention 2.
Detailed description of the invention
The invention will be further described with detailed description of the invention below in conjunction with the accompanying drawings, and it is protected by part
Protect the restriction of scope.
Embodiment 1
As it is shown in figure 1, three laminar flow epitaxial substrates (1,2,3) print corresponding functional layer, then respectively
It is integrally formed green compact plus the 4th laminar flow epitaxial substrate 4 overlapping on ground floor curtain coating substrate 1 top；
The activated electrode 51 of ground floor curtain coating substrate 1 printed thereon equity and disactivation electrode 52, live
Polarizing electrode 51 and disactivation electrode 52 adjacent between adjacent printing narrow-gap channel 6, at activated electrode 51
With disactivation electrode 52 printed thereon diffusion barrier layer 7, the back up of ground floor curtain coating substrate 1 is altogether
Reference to electrode 8, reference is cast substrate 1 front right by aperture with ground floor to electrode 8
Answering pin to be connected, activated electrode 51 and disactivation electrode 52 form the limit with reference to electrode 8 respectively
Current mode double cell；
Activated electrode 51 printing platinum rhodium slurry, wherein in function material, platinum content is 95wt%, and particle diameter is
0.1 μm rhodium content is 5wt%, and particle diameter is 0.05 μm, is mixed into appropriate Organic substance and meets print request
Slurry；
Platinum slurry is used in disactivation electrode 52 printing, and wherein in function material, platinum content is 99wt%, particle diameter
Being 0.1 μm, gold content is 1wt%, and particle diameter is 0.1 μm；It is mixed into appropriate Organic substance and meets printing
The slurry required；Thus activated electrode and disactivation electrode to form obvious NOx poor catalytic activity other；
The narrow-gap channel 6 importing tested atmosphere is formed, active electrode 51 He by printing organic ink
Nonactive electrode 52 upper surface equity printing porous slurry forms diffusion barrier layer 7, narrow-gap channel 6 He
Diffusion barrier layer 7 is connected and overlaps the 4th laminar flow epitaxial substrate 4 on ground floor curtain coating substrate 1；
Second layer curtain coating substrate 2 forms air duct, third layer stream above with the mode of punching
Epitaxial substrate 3 printed thereon adds thermal resistance 9, and resistance is 5 ohm, is adding thermal resistance 9 both sides and
Three laminar flow epitaxial substrates about 3 print insulating barrier (10,11) respectively, add thermal resistance 9 by conduction aperture
It is connected with the pin 12 at third layer curtain coating substrate 3 back side.
Being overlapped on request by four laminar flow epitaxial substrates and be integrally formed green compact, cutting green compact become one single chip green compact；
Sinter 2 hours through binder removal and at 1450 DEG C, prepare double cell current mode Oxynitride sensor chip.
Chip is fixed, with the ECU work in combination matched in the acceptance of the bid of standard atmosphere after making.
Embodiment 2
A kind of novel nitrogen oxide sensor chip and preparation method thereof, as shown in Figure 2.Except following feelings
Outside shape, remaining is with embodiment 1:
Activated electrode 51 printing platinum rhodium slurry, wherein function material platinum content is 98wt%, and rhodium content is
2wt%；
Platinum slurry is used in disactivation electrode 52 printing, and wherein function material platinum content is 98wt%, gold content
For 2wt%；
Can decompose completely during by filling prefabricated profiled binder removal after green compact complete in this position
The mode of organic material form the narrow-gap channel 6 importing tested atmosphere, in active electrode 51 and non-live
Property electrode 52 upper surface equity printing porous slurry formed diffusion barrier, narrow-gap channel 6 and diffusion barrier layer
7 are connected and overlap the 4th laminar flow epitaxial substrate 4 on ground floor curtain coating substrate 1；
Second layer curtain coating substrate 2 is above with can be complete when being printed on binder removal after green compact complete
The mode of the organic ink decomposed forms air duct 21, third layer curtain coating substrate 3 back up heating
Resistance 9, resistance is 3 ohm, prints insulating barrier (10,11) respectively adding thermal resistance about 9, adds
Thermal resistance 9 is connected with pin 12.
Being overlapped on request by four laminar flow epitaxial substrates and be integrally formed green compact, cutting green compact become one single chip green compact；
Sinter 1 hour through binder removal and at 1500 DEG C, prepare double cell current mode Oxynitride sensor chip.
Chip is fixed, with the ECU work in combination matched in the acceptance of the bid of standard atmosphere after making.
Claims (5)
1. double cell current mode Oxynitride sensor chip, including four layers of substrate, wherein three laminar flow epitaxial substrates print corresponding functional layer respectively, it is characterized in that: at activated electrode and the disactivation electrode of ground floor curtain coating substrate printed thereon equity, activated electrode and disactivation electrode adjacent between print narrow-gap channel and go directly extraneous tested atmosphere, at activated electrode and disactivation electrode printed thereon diffusion barrier layer, the reference that the back up of ground floor curtain coating substrate shares is to electrode, electrode is connected by reference by the corresponding pin of aperture with ground floor curtain coating substrate front, activated electrode and disactivation electrode form limit-current type double cell with reference to electrode respectively；Form air duct at second layer curtain coating substrate above with punching or mode of printing, add thermal resistance at third layer curtain coating substrate printed thereon, print insulating barrier respectively adding thermal resistance both sides, add thermal resistance and be connected with the pin of third layer curtain coating substrate back；After being overlapped successively by three laminar flow epitaxial substrates, then in ground floor curtain coating substrate stacked, the 4th laminar flow epitaxial substrate is integrally formed green compact, and sintering green compact prepare double cell current mode Oxynitride sensor chip.
The preparation method of double cell current mode Oxynitride sensor chip the most according to claim 1, it is characterized in that sequentially include the following steps: (1) is cast activated electrode and the disactivation electrode of substrate printed thereon equity at ground floor, activated electrode and disactivation electrode adjacent between print narrow-gap channel and go directly extraneous tested atmosphere, at activated electrode and disactivation electrode printed thereon diffusion barrier layer, the reference that the back up of ground floor curtain coating substrate shares is to electrode, electrode is connected by reference by the corresponding pin of aperture with ground floor curtain coating substrate front, activated electrode and disactivation electrode form limit-current type double cell with reference to electrode respectively；(2) air duct is formed at second layer curtain coating substrate above with punching or mode of printing, thermal resistance is added at third layer curtain coating substrate printed thereon, print insulating barrier respectively adding thermal resistance both sides, add thermal resistance and be connected with the pin of third layer curtain coating substrate back；(3) after being overlapped successively by three laminar flow epitaxial substrates, then in ground floor curtain coating substrate stacked, the 4th laminar flow epitaxial substrate is integrally formed green compact, and cutting green compact become one single chip green compact；Sinter 1-3 hour through binder removal and at 1400-1500 DEG C, prepare double cell current mode Oxynitride sensor chip.
The preparation method of double cell current mode Oxynitride sensor chip the most according to claim 2, each component percentage meter by weight, it is characterized in that: printing activated electrode uses platinum rhodium slurry, wherein in platinum rhodium slurry, platinum content is 50-99%, particle diameter is 0.01～0.5 μm, rhodium content is 1-50%, and particle diameter is 0.01～0.5 μm, and platinum rhodium slurry and appropriate Organic substance solvent are mixed into the slurry meeting print request.
The preparation method of double cell current mode Oxynitride sensor chip the most according to claim 2, each component percentage meter by weight, it is characterized in that: printing disactivation electrode uses platinum slurry, wherein in platinum slurry, platinum content is 50-99%, particle diameter is 0.01～0.5 μm, gold content is 1-50%, and particle diameter is 0.01～0.5 μm μm；Platinum slurry and appropriate Organic substance solvent are mixed into the slurry meeting print request.
The preparation method of double cell current mode Oxynitride sensor chip the most according to claim 2, each component percentage meter by weight, it is characterised in that: the described resistance adding thermal resistance is 2-20 ohm.
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| CN106596683A (en) * | 2016-11-16 | 2017-04-26 | 深圳市普利斯通传感科技有限公司 | Dual active electrode nitrogen oxide sensor chip and preparation method thereof |
| CN106908505A (en) * | 2017-03-07 | 2017-06-30 | 东风电子科技股份有限公司 | For the novel chip of NOx sensor |
| CN108254429A (en) * | 2018-02-02 | 2018-07-06 | 常州联德电子有限公司 | Chip wide domain lambda sensor double cell cellular construction |
| CN108469463A (en) * | 2018-03-22 | 2018-08-31 | 首凯汽车零部件（江苏）有限公司 | A kind of novel nitrogen oxide sensor chip and preparation method thereof |
| CN108490056A (en) * | 2018-03-22 | 2018-09-04 | 首凯汽车零部件（江苏）有限公司 | Two chamber bicell type Oxynitride sensor chips of one kind and preparation method thereof |
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| CN114414641A (en) * | 2022-01-24 | 2022-04-29 | 深圳市富济新材料科技有限公司 | Platinum-rhodium composite electrode for nitrogen-oxygen sensor chip and preparation method thereof |
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| CN106596683A (en) * | 2016-11-16 | 2017-04-26 | 深圳市普利斯通传感科技有限公司 | Dual active electrode nitrogen oxide sensor chip and preparation method thereof |
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| CN108254429A (en) * | 2018-02-02 | 2018-07-06 | 常州联德电子有限公司 | Chip wide domain lambda sensor double cell cellular construction |
| CN108490056B (en) * | 2018-03-22 | 2020-06-02 | 首凯汽车零部件（江苏）有限公司 | Two-chamber double-battery type nitrogen oxide sensor chip and preparation method thereof |
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| CN108490056A (en) * | 2018-03-22 | 2018-09-04 | 首凯汽车零部件（江苏）有限公司 | Two chamber bicell type Oxynitride sensor chips of one kind and preparation method thereof |
| CN108469463B (en) * | 2018-03-22 | 2020-07-28 | 首凯汽车零部件（江苏）有限公司 | Novel nitrogen oxide sensor chip and preparation method thereof |
| CN109060921B (en) * | 2018-08-15 | 2021-03-30 | 苏州工业园区福特斯汽车电子有限公司 | Limiting current type oxygen sensor chip and manufacturing method thereof |
| CN109060921A (en) * | 2018-08-15 | 2018-12-21 | 苏州工业园区福特斯汽车电子有限公司 | A kind of limit-current type oxygen sensor label and its manufacturing method |
| CN110687186A (en) * | 2019-11-01 | 2020-01-14 | 苏州禾苏传感器科技有限公司 | Nitrogen oxide sensor chip |
| CN113075277A (en) * | 2021-05-20 | 2021-07-06 | 中国科学技术大学先进技术研究院 | Nitrogen oxide sensor |
| CN113075277B (en) * | 2021-05-20 | 2022-08-02 | 中国科学技术大学先进技术研究院 | Nitrogen oxide sensor |
| CN114414641A (en) * | 2022-01-24 | 2022-04-29 | 深圳市富济新材料科技有限公司 | Platinum-rhodium composite electrode for nitrogen-oxygen sensor chip and preparation method thereof |
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Address after: 430205 No. 3, Phoenix Industrial Park, Donghu Development Zone, Wuhan City, Hubei Province Patentee after: Sifang Optoelectronic Co., Ltd. Address before: 430205 No. 3, Phoenix Industrial Park, Donghu Development Zone, Wuhan City, Hubei Province Patentee before: Wuhan Cubic Optoelectronics Co., Ltd. |